JPH0357962U - - Google Patents
Info
- Publication number
- JPH0357962U JPH0357962U JP11946989U JP11946989U JPH0357962U JP H0357962 U JPH0357962 U JP H0357962U JP 11946989 U JP11946989 U JP 11946989U JP 11946989 U JP11946989 U JP 11946989U JP H0357962 U JPH0357962 U JP H0357962U
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- furnace
- crystal growth
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims 2
- 239000003779 heat-resistant material Substances 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 1
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Chemically Coating (AREA)
Description
第１図は本考案に係わる半導体単結晶育成装置
の一実施例の縦断面図、第２図は同装置の―
線視断面図、第３図は本考案の他の実施例のフロ
ー管を示す縦断面図である。一方、第４図は従来
の半導体単結晶育成装置を示す縦断面図である。
１…炉体、２…２重ルツボ、２Ａ…外ルツボ体、
２Ｂ…内ルツボ体、５…ヒーター、６…保温筒、
８…フロー管取付板、１３…成長部観察用窓部、
２０…フロー管、２０Ａ…フロー管胴部、２０Ｂ
…フロー管フランジ部、２１…開口部、２２…透
明板、Ｙ…原料融液、Ｔ…単結晶、Ｓ…単結晶成
長部。
FIG. 1 is a vertical cross-sectional view of an embodiment of a semiconductor single crystal growth apparatus according to the present invention, and FIG.
FIG. 3 is a longitudinal sectional view showing a flow tube according to another embodiment of the present invention. On the other hand, FIG. 4 is a longitudinal sectional view showing a conventional semiconductor single crystal growth apparatus. 1...furnace body, 2...double crucible, 2A...outer crucible body,
2B...inner crucible body, 5...heater, 6...thermal cylinder,
8...Flow tube mounting plate, 13...Growth part observation window part,
20...Flow tube, 20A...Flow tube body, 20B
...Flow tube flange portion, 21...Opening portion, 22...Transparent plate, Y...Material melt, T...Single crystal, S...Single crystal growth part.
Claims (1)
ルツボを炉体内に設け、前記外ルツボ体と内ルツ
ボ体の間隙を通して２重ルツボ内に半導体原料を
供給する原料供給管を設けるとともに、内ルツボ
体の内側から単結晶を引き上げる引上機構を設け
、さらに内ルツボ体と育成中の単結晶の間に円筒
状のフロー管を配置し、このフロー管を炉体内で
固定された取付板により支持した半導体単結晶育
成装置において、 前記炉体の上部に炉体内を覗くための窓部を形
成するとともに、前記フロー管または取付板の少
なくとも一方に開口部を形成し、この開口部およ
び前記窓部を通して、炉体外から外ルツボ体と内
ルツボ体の間隙の融液表面を観察可能としたこと
を特徴とする半導体単結晶育成装置。 (2) 前記開口部を、耐熱材製の透明板で塞いだ
ことを特徴とする第１項記載の半導体単結晶育成
装置。[Claims for Utility Model Registration] (1) A double crucible consisting of an outer crucible body and an inner crucible body is provided in a furnace body, and a semiconductor raw material is supplied into the double crucible through the gap between the outer crucible body and the inner crucible body. In addition to providing a raw material supply pipe, a pulling mechanism is also provided to pull up the single crystal from inside the inner crucible, and a cylindrical flow pipe is placed between the inner crucible and the growing single crystal, and this flow pipe is connected to the furnace. In a semiconductor single crystal growth apparatus supported by a mounting plate fixed in the body, a window for looking into the furnace body is formed in the upper part of the furnace body, and an opening is formed in at least one of the flow tube or the mounting plate. A semiconductor single crystal growth apparatus characterized in that the surface of the melt in the gap between the outer crucible body and the inner crucible body can be observed from outside the furnace body through the opening and the window. (2) The semiconductor single crystal growth apparatus according to item 1, wherein the opening is closed with a transparent plate made of a heat-resistant material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11946989U JPH0357962U (en) | 1989-10-12 | 1989-10-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11946989U JPH0357962U (en) | 1989-10-12 | 1989-10-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0357962U true JPH0357962U (en) | 1991-06-05 |
Family
ID=31667595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11946989U Pending JPH0357962U (en) | 1989-10-12 | 1989-10-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0357962U (en) |
-
1989
- 1989-10-12 JP JP11946989U patent/JPH0357962U/ja active Pending
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