JPH0359033B2 - - Google Patents
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- JPH0359033B2 JPH0359033B2 JP59267006A JP26700684A JPH0359033B2 JP H0359033 B2 JPH0359033 B2 JP H0359033B2 JP 59267006 A JP59267006 A JP 59267006A JP 26700684 A JP26700684 A JP 26700684A JP H0359033 B2 JPH0359033 B2 JP H0359033B2
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Description
〔産業上の利用分野〕
本発明は、寸法精度の優れた耐熱性治具用炭化
珪素質焼結体に関し、特に本発明は、電子工業用
の耐熱性治具例えば半導体の拡散酸化処理、ダイ
オードの接合、ガラス封着およびパツケージのリ
ードフレームのロー付などの用途に適した寸法精
度の優れた耐熱性治具用炭化珪素質焼結体に関す
る。
〔従来の技術〕
電子工業用の耐熱性治具は主として半導体等の
高純度製品を取扱う用途に使用されるものであ
り、高純度で製品汚染のないこと、耐摩耗性に優
れていることおよび寸法精度に優れていることが
重要である。
前記電子工業用の耐熱性治具としては、高純度
に精製された炭化珪素粉末および電子工業用の高
純度シリコンから製造された再結晶炭化珪素材料
や高純度の黒鉛質材料の表面を炭化珪素で被覆し
た炭化珪素被覆黒鉛質材料などによつて製造され
たものが知られている。
〔発明が解決しようとする問題点〕
しかしながら、前記再結晶炭化珪素材料は電子
工業用の高純度シリコンを出発原料の一部とする
ため高価であるし、また出発原料の他の一部とし
て比較的粗粒の炭化珪素を使用するため表面の面
粗度が大きく、高い寸法精度の要求される耐熱性
治具を格別の機械加工を施すことなく製造するこ
とは困難である欠点を有しており、一方前記炭化
珪素被覆黒鉛質材料は黒鉛質材料の表面をSiOガ
スと反応させてSiC化せしめることにより製造さ
れるものであり、炭化珪素被覆層は比較的薄くポ
ーラスであるため耐酸化性および耐摩耗性に劣る
欠点を有していた。
〔問題点を解決するための手段〕
本発明者らは、前述の如き従来知られた材料の
欠点が除去改善された電子工業用の耐熱性治具用
材料すなわち耐酸化性、耐摩耗性および寸法精度
に優れた電子工業用の耐熱性治具用材料を安価に
提供することを目的とし、種々研究を積重ねた結
果、通常の常圧焼結法に使用される不純物成分の
少ない炭化珪素微粉末を出発原料とし、特定の雰
囲気および温度範囲内で焼結することによつて実
質的な焼成収縮を生じさせることなく表面精度の
高い高強度の炭化珪素質焼結体を製造することの
できることを新規に知見するに至り、本発明を完
成した。
本発明は、実質的に収縮させることなく焼結さ
せた炭化珪素質焼結体体であつて、平均曲げ強度
が7Kg/mm2以上であることを特徴とする寸法精度
に優れた耐熱性治具用炭化珪素質焼結体である。
以下、本発明を詳細に説明する。
本発明の炭化珪素質焼結体は、実質的に収縮さ
せることなく焼結させた炭化珪素質焼結体よりな
るものであることが必要である。その理由は、焼
結時に収縮させた通常の常任焼結法による炭化珪
素質焼結体は強度および耐摩耗性の面では好まし
いが、収縮を伴う焼結法によつて製造される焼結
体の寸法は生成形体の密度および焼結時の収縮量
に大きく影響を受けるため、寸法精度に優れた焼
結体を製造するためには焼結時の収縮を均一に生
起させなければならない。ところで、前述の如き
収縮を均一に生起させるためには均一な密度を有
する生成形体を得ることが重要であるが、そのよ
うな均一な密度を有する生成形体を得ることは極
めて困難であり、本発明の目的とする極めて寸法
精度の優れた焼結体を焼成収縮を生起させて製造
することが困難であるからである。
なお、本発明の実質的に収縮させることなく焼
結させた炭化珪素質焼結体の焼成収縮率は2%以
下であることが有利であり、なかでも1%以下で
あることがより好適である。
本発明の炭化珪素質焼結体は、平均曲げ強度が
7Kg/mm2以上であることが必要である。その理由
は、前記炭化珪素質焼結体の平均曲げ強度が7
Kg/mm2よりも小さいと使用中に折れたり割れたり
し易く、実質的な使用に耐えないからである。
本発明の炭化珪素質焼結体は、結晶の平均粒径
が0.5〜10μm、密度が1.4〜2.6g/cm3の炭化珪素
質焼結体よりなるものであることが好ましい。前
記結晶の平均粒径が0.5〜10μmの範囲内であるこ
とが好ましい理由は、前記結晶の平均粒径が
0.5μmよりも小さい焼結体は結晶粒相互の結合が
弱く、本発明の目的とする7Kgmm2以上の平均曲げ
強度を有する焼結体となすことが困難であるし、
一方10μmよりも大きいと焼結体表面の面粗度が
大きく寸法精度が劣化するからである。また前記
密度が1.4〜2.6g/cm3の範囲内であることが好ま
しい理由は、前記密度が1.4g/cm3よりも小さな
焼結体は炭化珪素粒子相互の結合箇所が少ないた
め、本発明の目的とする7Kg/mm2以上の平均曲げ
強度を有する焼結体となすことが困難であるから
であり、一方2.6g/cm3より大きな焼結体は実際
に製造する場合には、それに見合つた密度の生成
形体が要求されるが、2.6g/cm3よりも大きな密
度を有する生成形体を得ることは極めて困難であ
つて現実的でないからである。
本発明の炭化珪素焼結体は、寸法精度の優れて
いることが必要であり、平均アスペクト比が5以
下の炭化珪素結晶によつて構成された三次元網目
構造を有する炭化珪素質焼結体よりなるものであ
ることが好ましい。
次に本発明の寸法精度の優れた耐熱性治具用炭
化珪素質焼結体を製造する方法について説明す
る。
本発明の耐熱性治具用炭化珪素質焼結体は平均
粒径5μm以下の炭化珪素粉末を生成形体に成形し
た後、前記生成形体を1700〜2100℃の温度範囲内
の非酸化性雰囲気下で実質的に収縮させることな
く焼結する方法によつて製造することができる。
前記平均粒径が5μm以下の炭化珪素粉末を使用
する理由は、5μmより大きい粒度の炭化珪素は焼
成収縮を抑制する上では好ましいが、焼結体内の
粒と粒との結合箇所が少なくなるため、高強度す
なわち平均曲げ強度が7Kg/mm2以上の炭化珪素質
焼結体を得ることが困難になるばかりでなく、表
面の面粗度を劣化させるからである。
ところで、前記炭化珪素の結晶系にはα型、β
型および非晶質のものがあるが、その何れか、お
よびそれらの混合物をも使用することができ、な
かでもβ型のものは5μm以下のものを微粉末状で
取得し易く、しかも比較的高強度の焼結体を製造
することができるため有利に使用することがで
き、なかでもβ型炭化珪素を50重量%以上含有す
る炭化珪素粉末を使用することが有利である。
前記炭化珪素粉末は、ホウ素、アルミニウムお
よび鉄の含有量の合計が元素に換算して0.3重量
%以下であることが好ましい。その理由は、前記
ホウ素、アルミニウムおよび鉄の含有量の合計が
元素に換算して0.3重量%より多いと、炭化珪素
粉末中に含有されている遊離炭素との相互作用に
よつて焼結時に焼成収縮し易く、本発明の目的と
する実質的な収縮を生じさせることなく焼結体を
製造することが困難になるからである。
なお、前記炭化珪素粉末にホウ素、アルミニウ
ムおよび鉄の含有量が上記範囲内である場合に
は、出発原料中に5重量%以下の遊離炭素を含有
させるべく炭素質物質を添加することができる。
前記遊離炭素は結晶粒の粗大化を抑制する作用を
有しており、出発原料中に存在させることによ
り、焼結体の結晶粒径を均一化し比較的高強度の
焼結体を得ることができる。前記遊離炭素の含有
量を5重量%以下とする理由は、5重量%よりも
多いと炭化珪素粉末粒子間に過剰の炭素が存在す
ることになり、粒と粒との結合を著しく阻害する
ため、焼結体の強度が劣化するからである。
前記炭素質物質としては、焼結開始時に炭素を
存在させられるものであればよく、例えばフエノ
ール樹脂、リグニンスルホン酸塩、ポリビニルア
ルコール、コンスターチ、糖類、コータールピツ
チ、アルギン酸塩のような各種有機物質あるいは
カーボンブラツク、アセチレンブラツクのような
熱分解炭素を有利に使用することができる。
前記炭化珪素粉末は、前記ホウ素、アルミニウ
ムおよび鉄の含有量の合計が元素に換算して0.3
重量%を越える場合には炭素質物質および遊離炭
素の含有量が固定炭素量に換算して0.6重量%以
下であることが好ましい。その理由は、ホウ素、
アルミニウムおよび鉄の含有量の合計が元素に換
算して0.3重量%を越える場合に、炭素質物質お
よび遊離炭素の含有量が固定炭素量に換算して
0.6重量%よりも多いと、先にも説明した如く、
前記ホウ素、アルミニウムあるいは鉄と炭素との
相互作用によつて焼結時に焼成収縮し易く、本発
明の目的とする実質的な収縮を生じさせることな
く焼結体を得ることが困難になるからである。ま
た、前記ホウ素、アルミニウムおよび鉄の含有量
が余り多いと焼結体の物性を劣化させるため、な
るべく少ないことが望ましく、その含有量の合計
は元素に換算して2重量%以下であることが好ま
しい。
前記生成形体は1700〜2100℃の温度範囲内で焼
成される。その理由は前記温度が1700℃より低い
と粒と粒とを結合するネツクを充分に発達させる
ことが困難で、高い強度を有する焼結体を得るこ
とができず、一方2100℃より高いと一旦成長した
ネツクのうち一定の大きさよりも小さなネツクが
くびれた形状となつたり、著しい場合には消失し
たりして、むしろ強度が低くなるし、また一部の
粒子が粗大化するため表面の面粗度が劣化するか
らである。
前記生成形体は非酸化性雰囲気中で実質的に収
縮させることなく焼成される。その理由は、焼結
時における収縮は焼結体の強度を向上させる上で
は好ましいが、一般的には焼結時の収縮量は生成
形体の密度に大きく影響するため、均一な収縮を
生成させるためには均一な密度を有する生成形体
を得ることが重要である。しかし、そのような均
一な密度を有する生成形体を得ることは極めて困
難であるため、本発明の目的とする極めて寸法精
度の高い焼結体を焼成収縮を生起させて製造する
ことが困難であるからである。
なお、前述の如き寸法精度の高い焼結体を得る
上で実質的に収縮させることなく焼結する際の焼
成収縮率は2%以下であることが好ましく、なか
でも、1%以下であることがより好適である。
また、前記生成形体は1700〜2100℃の温度範囲
内において少なくとも10分間雰囲気中のCOある
いはN2の少なくともいずれかのガス分圧が100Pa
以上に維持された雰囲気中で焼成されることが好
ましい。その理由は、前記温度範囲内において少
なくとも10分間雰囲気中のCOあるいはN2の少な
くともいずれかのガス分圧を100Pa以上とするこ
とによつて、ネツクの成長を促進させ、かつ炭化
珪素の焼結時における焼成収縮を効果的に抑制す
ることができるからである。
本発明の耐熱性治具用炭化珪素質焼結体は前記
生成形体を焼成雰囲気を制御することのできる耐
熱性容器内に装入し、焼成することが有利であ
る。このように耐熱性の容器内に装入して焼成雰
囲気を制御しつつ焼成することが有利である理由
は、隣接する炭化珪素結晶同志の結合およびネツ
クの成長を促進させることができるからである。
前述の如く耐熱性の容器内に生成形体を装入して
焼成雰囲気を制御しつつ焼成することによつて隣
接する炭化珪素結晶同志の結合およびネツクの成
長を促進させることができる理由は、炭化珪素粒
子間における炭化珪素の蒸発−再凝縮および/ま
たは表面拡散による移動を促進することができる
ためと考えられる。
前記耐熱性容器としては、黒鉛や炭化珪素など
の材質およびこれらと同等の機能を有するものを
有利に使用することができる。
また、前記生成形体を焼成雰囲気を制御するこ
とのできる耐熱性容器中に装入して焼成すること
により、焼成時における炭化珪素の揮散率を5重
量%以下に制御することが有利である。
前記耐熱性治具用炭化珪素質焼結体を製造する
ための生成形体は45〜80容量%の密度を有するも
のであることが有利である。その理由は、前記生
成形体の密度が45容量%より低いと炭化珪素粒子
相互の接触点が少ないため、必然的に結合箇所が
少なくなり本発明の目的とする7Kg/mm2以上の平
均曲げ強度を有する焼結体を得ることが困難であ
るからであり、一方80容量%より高い生成形体は
製造することが困難であるからである。
また、前記1700℃に至るまでの昇温過程のうち
1500℃以上で少なくとも30分間雰囲気中のCOお
よびN2のガス分圧の合計を100Pa以下に維持する
ことにより、炭化珪素の粒子との間のネツクを均
一に生成させて強固に接合することができる。
なお、炭化珪素以外の炭化物においても炭化珪
素と同様の焼結機構を有するものであれば、本発
明と同様に寸法精度および強度に優れた焼結体を
得ることができる。
次に本発明を実施例および比較例について説明
する。
実施例 1
出発原料として使用した炭化珪素粉末は94.6重
量%がβ型結晶で残部が実質的に2H型結晶より
なり、0.29重量%の遊離炭素、0.17重量%の酸
素、0.03重量%のアルミニウムを主として含有
し、0.28μm平均粒径を有しており、ホウ素は検
出されなかつた。
前記炭化珪素粉末100重量部に対し、ポリビニ
ルアルコール5重量部、水300重量部を配合し、
ボールミル中で5時間混合した後乾燥した。
この乾燥混合物を適量採取し、顆粒化した後金
属製押し型を用いて3000Kg/cm2の圧力で成形し
た。この生成形体の寸法は250mm×250mm×30mm
で、密度は2.0g/cm3(62容量%)であつた。
前記生成形体を黒鉛製ルツボに装入し、タンマ
ン型焼成炉を使用して1気圧の主としてアルゴン
ガス雰囲気中で焼成した。昇温過程は450℃/時
間で2000℃まで昇温し、最高温度2000℃で10分間
保持した。焼結中のCOガス分圧は常温〜1700℃
が80Pa以下、1700℃よりも高温域では300±50Pa
の範囲内となるようにアルゴンガス流量を適宜調
整して制御した。
得られた焼結体の密度は2.05g/cm3で、その結
晶構造は走査型電子顕微鏡によつて観察したとこ
ろ、平均アスペクト比が2.5の炭化珪素板状結晶
が多方向に複雑に絡み合つた三次元構造を有して
おり、生成形体に対する線収縮率はいずれの方向
に対しても0.25±0.02%の範囲内で、焼結体の寸
法精度は±0.05mm以内であつた。また、この焼結
体の平均曲げ強度は18.5Kg/mm2と極めて高い値を
示した。
実施例 2
実施例1と同様の操作を繰返して焼結体を製造
した。結果は第1表に示した。
第1表に示した結果よりわかるように線収縮率
は最大でも0.253±0.022%程度であり、実施例1
に示した焼結条件によれば線収縮率を0.25%に設
定して生成形体を成形し焼結を行うことにより、
寸法精度が±0.055mm以内の極めて寸法精度の高
い焼結体を容易に製造することが可能であること
が確認された。
比較例 1
実施例1に記載した炭化珪素粉末100重量部に
対し、比表面積が20.5m2/gの炭化ホウ素粉末1
重量部、比表面積が128m2/gのカーボンブラツ
ク粉末2重量部、ポリオキシエチレンノニルフエ
ノールエーテル0.4重量部、水400重量部を配合
し、ボールミル中で20時間混合した後乾燥した。
この乾燥混合物を適量採取し、顆粒化した後金
属製押し型を用いて150Kg/cm3の圧力で仮成形し、
次にアイソスタテイツクプレス機を用いて2000
Kg/cm2の圧力で成形した。得られた生成形体の寸
法および密度は第1表に示した。
前記生成形体を実施例1と同様にタンマン型焼
成炉を使用して1気圧の主としてアルゴンガス雰
囲気中で焼成した。昇温過程は常温〜1650℃は5
℃/min、1650℃にて45分間保持した後、さらに
5℃/minで昇温し最高温度2100℃で30分間保持
した。焼結中のCOガス分圧は常温〜1650℃が
5KPa以下、1650℃で保持する際は500Pa以下、
1650℃より高温域では5KPa以下となるようにア
ルゴンガス流量を適宜調整して制御した。結果は
第1表に示した。
第1表に示した結果よりわかるように、得られ
た焼結体はいずれも緻密で高強度であるが、収縮
率のバラツキが大きく特に寸法精度の高い焼結体
を仕上げ加工なしで製造することは困難であつ
た。
実施例 3
実施例1と同様であるが、最高温度を1900℃と
し雰囲気ガスとしてアルゴンガスと窒素ガスとの
混合ガスを使用して焼結体を製造した。焼結中の
窒素ガス分圧は常温〜1700℃が20Pa以下、1700
℃よりも高温域では300Paに設定した。なお焼結
中のCOガス分圧は常に50Pa以下となるようにア
ルゴンガスと窒素ガスとの混合ガスの流量を適宜
調整して制御した。得られた焼結体の密度は2.08
g/cm3であり、生成形体に対する線収縮率はいず
れの方向に対しても0.261±0.012%の範囲内であ
り、焼結体の寸法精度は±0.030mm以内であつた。
また、この焼結体の平均曲げ強度は22.5Kg/cm2と
極めて高い値が得られた。
比較例 2
実施例1と同様であるが、炭化珪素粉末として
95.7重量%がβ型結晶で残部が実質的に2H型結
晶よりなり、0.10重量%の誘離炭素、0.15重量%
の酸素、0.02重量%の鉄、0.02重量%のアルミニ
ウムを主として含有し、8μmの平均粒径を有する
炭化珪素粉末を使用して焼結体を得た。なお、こ
の炭化珪素粉末からはホウ素を検出することがで
きなかつた。得られた焼結体の密度は1.85g/cm3
であり、生成形体に対する線収縮率は0.248±
0.058%と比較的バラツキがあり、寸法精度も±
0.145mmであつた。また、この焼結体の平均曲げ
強度は6.3Kg/mm2と比較的低いものであつた。
比較例 3
実施例1と同様であるが、焼成時の最高温度を
2200℃と高めて焼結体を得た。
得られた焼結体の密度は1.95g/cm3と低く、生
成形体に対する線収縮率は0.203±0.11%と比較
的バラツキが大きく、寸法精度も±0.275mmと著
しく低下した。また、この焼結体の平均曲げ強度
は4.2Kg/mm2と著しく低かつた。
実施例 4
実施例1と同様であるが、炭化珪素粉末として
92.8重量%がβ型結晶で残部が実質的に2H型結
晶よりなり、0.21重量%の遊離炭素、0.17重量%
の酸素、0.05重量%の鉄、0.01重量%のアルミニ
ウム、0.2重量%のホウ素を主として含有し、
0.27μmの平均粒径を有する炭化珪素粉末を使用
し、前記炭化珪素粉末100重量部に対し、固定炭
素含有率51.6重量%のノボラツク型フエノール樹
脂0.4部、ベンゼン300重量部を配合し、ボールミ
ル中で5時間混合した後乾燥して得た乾燥混合物
を使用して焼結体を得た。
得られた焼結体の密度は2.05g/cm3であり、生
成形体に対する線収縮率は0.52±0.03%と若干大
きくなつたが寸法精度は±0.08mmと比較的良であ
つた。なお、この焼結体の平均曲げ強度は32.5
Kg/mm2と著しく高い値が得られた。
比較例 4
実施例4と同様であるが、ノボラツクフエノー
ル樹脂の配合量を1.6部に変えて焼結体を得た。
得られた焼結体の密度は2.51g/cm3と大きくな
り、生成形体に対する線収縮率も4.47±0.023%
とバラツキが大きく、寸法精度も±0.575mmと著
しく低下した。なお、この焼結体の平均曲げ強度
は31.7Kg/mm2であつた。
[Industrial Field of Application] The present invention relates to a silicon carbide sintered body for heat-resistant jigs with excellent dimensional accuracy, and in particular, the present invention relates to heat-resistant jigs for the electronics industry, such as diffusion oxidation treatment of semiconductors, diode The present invention relates to a heat-resistant silicon carbide sintered body for use in jigs, which has excellent dimensional accuracy and is suitable for applications such as bonding, glass sealing, and brazing lead frames of packages. [Prior art] Heat-resistant jigs for the electronics industry are mainly used for handling high-purity products such as semiconductors, and are required to have high purity, no product contamination, excellent wear resistance, and It is important to have excellent dimensional accuracy. The heat-resistant jig for the electronic industry is a recrystallized silicon carbide material manufactured from highly purified silicon carbide powder and high-purity silicon for the electronic industry, or a high-purity graphite material whose surface is made of silicon carbide. It is known to be manufactured from a graphite material coated with silicon carbide. [Problems to be Solved by the Invention] However, the recrystallized silicon carbide material is expensive because it uses high-purity silicon for the electronic industry as a starting material, and it is difficult to compare it with other starting materials. Because it uses coarse-grained silicon carbide, the surface has a large surface roughness, and it has the disadvantage that it is difficult to manufacture heat-resistant jigs that require high dimensional accuracy without special machining. On the other hand, the silicon carbide-coated graphite material is manufactured by reacting the surface of the graphite material with SiO gas to convert it into SiC, and the silicon carbide coating layer is relatively thin and porous, so it has low oxidation resistance. It also had the disadvantage of poor abrasion resistance. [Means for Solving the Problems] The present inventors have developed a material for heat-resistant jigs for the electronic industry, which has improved oxidation resistance, abrasion resistance, and With the aim of providing low-cost materials for heat-resistant jigs for the electronics industry with excellent dimensional accuracy, we have conducted a variety of research to develop silicon carbide fine materials with low impurity components that are used in normal pressureless sintering methods. By using powder as a starting material and sintering it in a specific atmosphere and temperature range, it is possible to produce a high-strength silicon carbide sintered body with high surface precision without causing substantial firing shrinkage. The present invention was completed based on this new discovery. The present invention is a silicon carbide sintered body sintered without substantially shrinking, and has an average bending strength of 7 kg/mm 2 or more, and is a heat-resistant cured body with excellent dimensional accuracy. It is a silicon carbide sintered body for tools. The present invention will be explained in detail below. The silicon carbide sintered body of the present invention must be made of a silicon carbide sintered body sintered without substantially shrinking. The reason for this is that silicon carbide sintered bodies produced by the normal standing sintering method, which is shrunk during sintering, are preferable in terms of strength and wear resistance; The dimensions of the sintered body are greatly affected by the density of the formed body and the amount of shrinkage during sintering, so in order to produce a sintered body with excellent dimensional accuracy, the shrinkage during sintering must occur uniformly. By the way, in order to cause the above-mentioned contraction uniformly, it is important to obtain a formed body with a uniform density, but it is extremely difficult to obtain a formed body with such a uniform density, and this study This is because it is difficult to produce a sintered body with extremely excellent dimensional accuracy, which is the object of the invention, by causing firing shrinkage. In addition, it is advantageous that the firing shrinkage rate of the silicon carbide sintered body of the present invention, which is sintered without substantially shrinking, is 2% or less, and more preferably 1% or less. be. The silicon carbide sintered body of the present invention needs to have an average bending strength of 7 Kg/mm 2 or more. The reason is that the average bending strength of the silicon carbide sintered body is 7.
This is because if it is smaller than Kg/mm 2 , it will easily break or crack during use and will not be able to withstand practical use. The silicon carbide sintered body of the present invention is preferably a silicon carbide sintered body having an average crystal grain size of 0.5 to 10 μm and a density of 1.4 to 2.6 g/cm 3 . The reason why the average grain size of the crystals is preferably within the range of 0.5 to 10 μm is that the average grain size of the crystals is
A sintered body smaller than 0.5 μm has weak bonds between crystal grains, and it is difficult to form a sintered body with an average bending strength of 7 Kgmm 2 or more, which is the objective of the present invention.
On the other hand, if it is larger than 10 μm, the surface roughness of the sintered body becomes large and the dimensional accuracy deteriorates. The reason why the density is preferably within the range of 1.4 to 2.6 g/cm 3 is that a sintered body with a density smaller than 1.4 g/cm 3 has few bonding points between silicon carbide particles. This is because it is difficult to produce a sintered body with an average bending strength of 7 kg/cm 2 or more , which is the aim of Although a green body with a suitable density is required, it is extremely difficult and impractical to obtain a green body with a density greater than 2.6 g/cm 3 . The silicon carbide sintered body of the present invention must have excellent dimensional accuracy, and is a silicon carbide sintered body having a three-dimensional network structure composed of silicon carbide crystals with an average aspect ratio of 5 or less. It is preferable that it is made of the following. Next, a method for manufacturing a heat-resistant silicon carbide sintered body for a jig with excellent dimensional accuracy according to the present invention will be described. The silicon carbide sintered body for heat-resistant jigs of the present invention is obtained by forming silicon carbide powder with an average particle size of 5 μm or less into a green body, and then molding the green body in a non-oxidizing atmosphere within a temperature range of 1700 to 2100°C. It can be manufactured by a method of sintering without substantially shrinking. The reason why silicon carbide powder with an average particle size of 5 μm or less is used is that silicon carbide with a particle size larger than 5 μm is preferable for suppressing firing shrinkage, but it reduces the number of bonding points between grains in the sintered body. This is because not only is it difficult to obtain a silicon carbide sintered body having high strength, that is, an average bending strength of 7 kg/mm 2 or more, but also the surface roughness is deteriorated. By the way, the crystal system of silicon carbide has α type and β type.
There are two types: type and amorphous, and any of them or a mixture thereof can be used. Among them, β type is easy to obtain in fine powder form with a diameter of 5 μm or less, and is relatively easy to obtain. It can be advantageously used because a high-strength sintered body can be produced, and in particular, it is advantageous to use silicon carbide powder containing 50% by weight or more of β-type silicon carbide. The silicon carbide powder preferably has a total content of boron, aluminum, and iron of 0.3% by weight or less in terms of elements. The reason for this is that if the total content of boron, aluminum and iron is more than 0.3% by weight in terms of elements, sintering will occur during sintering due to interaction with free carbon contained in silicon carbide powder. This is because it tends to shrink, making it difficult to produce a sintered body without causing substantial shrinkage, which is the objective of the present invention. In addition, when the content of boron, aluminum, and iron in the silicon carbide powder is within the above range, a carbonaceous substance can be added to make the starting material contain 5% by weight or less of free carbon.
The free carbon has the effect of suppressing the coarsening of crystal grains, and by making it present in the starting raw material, it is possible to make the crystal grain size of the sintered body uniform and obtain a sintered body with relatively high strength. can. The reason why the free carbon content is set to 5% by weight or less is that if it is more than 5% by weight, excessive carbon will exist between the silicon carbide powder particles, which will significantly inhibit the bonding between the particles. This is because the strength of the sintered body deteriorates. The carbonaceous material may be any material as long as it allows carbon to be present at the start of sintering, such as various organic materials such as phenol resin, lignin sulfonate, polyvinyl alcohol, cornstarch, saccharide, coatal pitch, alginate, or carbon. Pyrolytic carbon such as black, acetylene black can be used advantageously. The silicon carbide powder has a total content of boron, aluminum, and iron of 0.3 in terms of elements.
When the content of carbonaceous substances and free carbon exceeds 0.6% by weight, it is preferable that the content of carbonaceous substances and free carbon is 0.6% by weight or less in terms of fixed carbon amount. The reason is that boron,
If the total content of aluminum and iron exceeds 0.3% by weight in terms of elements, the content of carbonaceous substances and free carbon in terms of fixed carbon content
As explained earlier, if it is more than 0.6% by weight,
This is because the interaction between boron, aluminum, or iron and carbon tends to cause sintering shrinkage during sintering, making it difficult to obtain a sintered body without causing substantial shrinkage, which is the objective of the present invention. be. In addition, if the content of boron, aluminum, and iron is too high, it will deteriorate the physical properties of the sintered body, so it is desirable that the content be as low as possible, and the total content should be 2% by weight or less in terms of elements. preferable. The resulting body is fired within a temperature range of 1700-2100°C. The reason for this is that if the temperature is lower than 1700°C, it is difficult to sufficiently develop the bonds that connect the grains, making it impossible to obtain a sintered body with high strength, whereas if the temperature is higher than 2100°C, once the Among the nets that have grown, those that are smaller than a certain size become constricted or, in severe cases, disappear, resulting in a decrease in strength, and some particles become coarser, causing the surface to become rougher. This is because the roughness deteriorates. The resulting shaped body is fired in a non-oxidizing atmosphere without substantial shrinkage. The reason for this is that shrinkage during sintering is preferable for improving the strength of the sintered body, but generally speaking, the amount of shrinkage during sintering has a large effect on the density of the formed body, so it is necessary to generate uniform shrinkage. Therefore, it is important to obtain a formed body with uniform density. However, it is extremely difficult to obtain a green body with such uniform density, and therefore it is difficult to produce a sintered body with extremely high dimensional accuracy, which is the object of the present invention, by causing firing shrinkage. It is from. In addition, in order to obtain a sintered body with high dimensional accuracy as described above, the firing shrinkage rate when sintering without substantially shrinking is preferably 2% or less, particularly 1% or less. is more suitable. In addition, the formed body has a gas partial pressure of at least one of CO or N 2 in the atmosphere of 100 Pa for at least 10 minutes within a temperature range of 1700 to 2100°C.
It is preferable that the firing be performed in an atmosphere maintained above. The reason for this is that by increasing the partial pressure of at least one of CO or N2 in the atmosphere to 100 Pa or higher for at least 10 minutes within the above temperature range, the growth of the nets can be promoted and the sintering of silicon carbide can be accelerated. This is because shrinkage during firing can be effectively suppressed. It is advantageous for the silicon carbide sintered body for a heat-resistant jig of the present invention to be fired by charging the formed body into a heat-resistant container in which the firing atmosphere can be controlled. The reason why it is advantageous to charge the material into a heat-resistant container and fire it while controlling the firing atmosphere is because it can promote bonding between adjacent silicon carbide crystals and the growth of nets. .
The reason why bonding between adjacent silicon carbide crystals and the growth of nets can be promoted by charging the formed body into a heat-resistant container and firing while controlling the firing atmosphere as described above is because the carbonization This is thought to be because movement of silicon carbide between silicon particles by evaporation-recondensation and/or surface diffusion can be promoted. As the heat-resistant container, materials such as graphite and silicon carbide, and materials having functions equivalent to these materials can be advantageously used. Furthermore, it is advantageous to control the volatilization rate of silicon carbide to 5% by weight or less during firing by charging the formed body into a heat-resistant container in which the firing atmosphere can be controlled and firing it. Advantageously, the formed body for producing the silicon carbide sintered body for the heat-resistant jig has a density of 45 to 80% by volume. The reason for this is that when the density of the formed body is lower than 45% by volume, there are fewer points of contact between the silicon carbide particles, which inevitably leads to fewer bonding points and an average bending strength of 7 Kg/mm 2 or more, which is the objective of the present invention. The reason for this is that it is difficult to obtain a sintered body having a sintered body with a volume of more than 80% by volume, while it is difficult to produce a formed body having a volume content higher than 80%. Also, in the temperature increase process up to 1700℃ mentioned above,
By maintaining the total gas partial pressure of CO and N 2 in the atmosphere at 100 Pa or less at a temperature of 1500°C or higher for at least 30 minutes, it is possible to uniformly generate nets between the silicon carbide particles and form a strong bond. can. Note that, as long as carbides other than silicon carbide have a sintering mechanism similar to that of silicon carbide, it is possible to obtain a sintered body with excellent dimensional accuracy and strength as in the present invention. Next, the present invention will be explained with reference to Examples and Comparative Examples. Example 1 The silicon carbide powder used as a starting material consisted of 94.6% by weight of β-type crystals and the remainder substantially of 2H-type crystals, and contained 0.29% by weight of free carbon, 0.17% by weight of oxygen, and 0.03% by weight of aluminum. It mainly contained boron and had an average particle size of 0.28 μm, and no boron was detected. 5 parts by weight of polyvinyl alcohol and 300 parts by weight of water are blended with 100 parts by weight of the silicon carbide powder,
The mixture was mixed in a ball mill for 5 hours and then dried. An appropriate amount of this dry mixture was taken, granulated, and then molded using a metal mold at a pressure of 3000 kg/cm 2 . The dimensions of this generated feature are 250mm x 250mm x 30mm
The density was 2.0 g/cm 3 (62% by volume). The formed body was placed in a graphite crucible and fired in a Tammann type firing furnace in an atmosphere of mainly argon gas at 1 atm. The temperature was raised to 2000°C at a rate of 450°C/hour and held at the maximum temperature of 2000°C for 10 minutes. CO gas partial pressure during sintering is room temperature to 1700℃
is 80Pa or less, 300±50Pa at higher temperatures than 1700℃
The argon gas flow rate was appropriately adjusted and controlled so that it was within the range of . The density of the obtained sintered body was 2.05 g/ cm3 , and its crystal structure was observed using a scanning electron microscope and revealed that silicon carbide plate crystals with an average aspect ratio of 2.5 are intricately intertwined in multiple directions. The sintered body had a three-dimensional structure with a linear shrinkage rate of 0.25±0.02% in all directions, and the dimensional accuracy of the sintered body was within ±0.05 mm. Furthermore, the average bending strength of this sintered body was extremely high at 18.5 Kg/mm 2 . Example 2 The same operation as in Example 1 was repeated to produce a sintered body. The results are shown in Table 1. As can be seen from the results shown in Table 1, the linear shrinkage rate was approximately 0.253±0.022% at maximum, and Example 1
According to the sintering conditions shown in Figure 2, by setting the linear shrinkage rate to 0.25%, forming the formed body, and performing sintering,
It was confirmed that it is possible to easily produce a sintered body with extremely high dimensional accuracy within ±0.055 mm. Comparative Example 1 Boron carbide powder 1 with a specific surface area of 20.5 m 2 /g was added to 100 parts by weight of the silicon carbide powder described in Example 1.
2 parts by weight of carbon black powder having a specific surface area of 128 m 2 /g, 0.4 parts by weight of polyoxyethylene nonylphenol ether, and 400 parts by weight of water were mixed in a ball mill for 20 hours and then dried. An appropriate amount of this dry mixture was collected, granulated, and then pre-molded using a metal mold at a pressure of 150 kg/ cm3 .
Next, use an isostatic press machine to produce 2000
It was molded at a pressure of Kg/cm 2 . The dimensions and density of the resulting green bodies are shown in Table 1. The resulting green body was fired in the same manner as in Example 1 using a Tammann type firing furnace in an atmosphere of mainly argon gas at 1 atm. The heating process is from room temperature to 1650℃: 5
After holding at 1,650°C for 45 minutes at a rate of 1,650°C/min, the temperature was further increased at a rate of 5°C/min, and a maximum temperature of 2,100°C was maintained for 30 minutes. The CO gas partial pressure during sintering is between room temperature and 1650℃.
5KPa or less, 500Pa or less when kept at 1650℃,
The argon gas flow rate was appropriately adjusted and controlled so that the temperature was 5 KPa or less in the high temperature range above 1650°C. The results are shown in Table 1. As can be seen from the results shown in Table 1, the obtained sintered bodies are all dense and have high strength, but the shrinkage rate varies widely, making it difficult to manufacture sintered bodies with particularly high dimensional accuracy without finishing processing. That was difficult. Example 3 A sintered body was produced in the same manner as in Example 1, except that the maximum temperature was 1900° C. and a mixed gas of argon gas and nitrogen gas was used as the atmospheric gas. Nitrogen gas partial pressure during sintering is 20Pa or less at room temperature to 1700℃, 1700℃
It was set at 300Pa in the temperature range higher than ℃. The CO gas partial pressure during sintering was controlled by appropriately adjusting the flow rate of the mixed gas of argon gas and nitrogen gas so that it was always below 50 Pa. The density of the obtained sintered body is 2.08
g/cm 3 , the linear shrinkage rate of the formed body was within the range of 0.261±0.012% in any direction, and the dimensional accuracy of the sintered body was within ±0.030 mm.
Furthermore, the average bending strength of this sintered body was as high as 22.5 Kg/cm 2 . Comparative Example 2 Same as Example 1, but as silicon carbide powder
95.7% by weight consists of β-type crystals and the remainder consists essentially of 2H-type crystals, 0.10% by weight of diluted carbon, 0.15% by weight
A sintered body was obtained using silicon carbide powder containing mainly oxygen, 0.02% by weight of iron, and 0.02% by weight of aluminum, and having an average particle size of 8 μm. Note that boron could not be detected from this silicon carbide powder. The density of the obtained sintered body is 1.85g/cm 3
The linear shrinkage rate for the formed shape is 0.248±
There is a relatively large variation of 0.058%, and the dimensional accuracy is ±
It was 0.145mm. Further, the average bending strength of this sintered body was 6.3 Kg/mm 2 , which was relatively low. Comparative Example 3 Same as Example 1, but the maximum temperature during firing was changed.
A sintered body was obtained by increasing the temperature to 2200°C. The density of the obtained sintered body was as low as 1.95 g/cm 3 , the linear shrinkage rate with respect to the formed body had a relatively large variation of 0.203±0.11%, and the dimensional accuracy was also significantly reduced to ±0.275 mm. Furthermore, the average bending strength of this sintered body was extremely low at 4.2 Kg/mm 2 . Example 4 Same as Example 1, but as silicon carbide powder
92.8% by weight of β-type crystals and the remainder essentially of 2H-type crystals, 0.21% by weight of free carbon, 0.17% by weight
of oxygen, 0.05% by weight of iron, 0.01% by weight of aluminum, 0.2% by weight of boron,
Using silicon carbide powder having an average particle size of 0.27 μm, 0.4 parts of novolak type phenolic resin with a fixed carbon content of 51.6% by weight and 300 parts of benzene were blended with 100 parts by weight of the silicon carbide powder, and the mixture was mixed in a ball mill. A sintered body was obtained using the dry mixture obtained by mixing for 5 hours and drying. The density of the obtained sintered body was 2.05 g/cm 3 , and although the linear shrinkage rate was slightly higher than that of the formed body at 0.52±0.03%, the dimensional accuracy was relatively good at ±0.08 mm. The average bending strength of this sintered body is 32.5
A significantly high value of Kg/mm 2 was obtained. Comparative Example 4 A sintered body was obtained in the same manner as in Example 4, except that the amount of novolak phenol resin was changed to 1.6 parts. The density of the obtained sintered body was as high as 2.51 g/cm 3 , and the linear shrinkage rate for the formed body was 4.47±0.023%.
The variation was large, and the dimensional accuracy was significantly reduced to ±0.575mm. The average bending strength of this sintered body was 31.7 Kg/mm 2 .
以上述べた如く、本発明の耐熱性治具用炭化珪
素質焼結体は実質的に収縮を生じさせることなく
焼結されたものであつて、寸法精度および強度に
優れており、格別の機械加工を施すことなく安価
に供給できる。
As described above, the silicon carbide sintered body for heat-resistant jigs of the present invention is sintered without substantially shrinking, has excellent dimensional accuracy and strength, and is suitable for use in exceptional machines. It can be supplied at low cost without any processing.
Claims (1)
体に成形した後、1700〜2100℃の温度範囲内で、
少なくとも10分間雰囲気中のCOあるいはN2の少
なくともいずれかのガス分圧が100Pa以上に維持
された雰囲気中で実質的に収縮させることなく焼
成し、平均アスペクト比が5以下の炭化珪素結晶
によつて構成される密度が1.4〜2.6g/cm2の三次
元網目構造する焼結体とすることを特徴とする寸
法精度の優れた耐熱性治具用炭化珪素質焼結体の
製造方法。1. After molding silicon carbide powder with an average particle size of 5 μm or less into a green body, within a temperature range of 1700 to 2100°C,
Silicon carbide crystals with an average aspect ratio of 5 or less are fired without substantially shrinking in an atmosphere where the partial pressure of at least one of CO or N2 in the atmosphere is maintained at 100 Pa or more for at least 10 minutes. 1. A method for producing a heat-resistant silicon carbide sintered body for a jig with excellent dimensional accuracy, characterized in that the sintered body has a three-dimensional network structure with a density of 1.4 to 2.6 g/cm 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59267006A JPS61143686A (en) | 1984-12-18 | 1984-12-18 | Silicon carbide sintered body for heat-resistant jig having excellent dimensional accuracy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59267006A JPS61143686A (en) | 1984-12-18 | 1984-12-18 | Silicon carbide sintered body for heat-resistant jig having excellent dimensional accuracy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61143686A JPS61143686A (en) | 1986-07-01 |
| JPH0359033B2 true JPH0359033B2 (en) | 1991-09-09 |
Family
ID=17438745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59267006A Granted JPS61143686A (en) | 1984-12-18 | 1984-12-18 | Silicon carbide sintered body for heat-resistant jig having excellent dimensional accuracy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61143686A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6311589A (en) * | 1986-07-01 | 1988-01-19 | イビデン株式会社 | Heat resistant tool and manufacture |
| JPH0610684Y2 (en) * | 1989-09-19 | 1994-03-16 | 株式会社カイジョー | Bonding device |
| JP2758313B2 (en) * | 1992-06-08 | 1998-05-28 | 日本碍子株式会社 | Sporing-resistant shelf |
| WO1993025859A1 (en) * | 1992-06-08 | 1993-12-23 | Ngk Insulators, Ltd. | Shelf plate having anti-spalling, anti-creep and oxidation resistant properties |
| US5840436A (en) * | 1992-06-08 | 1998-11-24 | Ngk Insulators, Ltd. | Spalling-resistant, creep-resistant and oxidation-resistant setters |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS578794A (en) * | 1980-06-17 | 1982-01-18 | Mitsubishi Chem Ind Ltd | Preparation of androstane-type steroid |
| JPS59101195A (en) * | 1982-11-30 | 1984-06-11 | シャープ株式会社 | Washer |
-
1984
- 1984-12-18 JP JP59267006A patent/JPS61143686A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61143686A (en) | 1986-07-01 |
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