JPH0360016A - Manufacture of polycrystalline silicon film - Google Patents
Manufacture of polycrystalline silicon filmInfo
- Publication number
- JPH0360016A JPH0360016A JP19581389A JP19581389A JPH0360016A JP H0360016 A JPH0360016 A JP H0360016A JP 19581389 A JP19581389 A JP 19581389A JP 19581389 A JP19581389 A JP 19581389A JP H0360016 A JPH0360016 A JP H0360016A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- silicon film
- ultrafine
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000005224 laser annealing Methods 0.000 claims abstract description 9
- 239000011882 ultra-fine particle Substances 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 10
- 239000011856 silicon-based particle Substances 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 238000001179 sorption measurement Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract 5
- 238000000137 annealing Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】 （イ）産業上の利用分テデ 本発明は多結晶シリコン膜の５２ｆｉｈ法に関する。[Detailed description of the invention] (b) Industrial use portion The present invention relates to a 52fih method for polycrystalline silicon films.
（ロ）１足来の技術
結晶膜の低温成膜要求や大面積化要求を実現する方法と
して、基板表面に低温成膜技術であるプラズマＣＶＤ法
、熱ＣＶＤ法、真空蒸着法、成るいはスパッタ法などに
より、非晶質膜や多結晶膜などの非単結晶膜を得、その
非晶ＩＩＩＪ膜を多結晶膜や＋１を結晶膜に変換したり
、成るいは多結晶膜を単結晶膜に変換する方法が挙げら
れる。その−例として、例えば特開昭６３−１７０９７
６号公報に開示された先行技術は、予め基板表面にプラ
ズマＣＶＤ法により非晶質膜を低温成膜し、その後にレ
ーザビーム照射によるアニーリングを施し、多結晶膜を
得る方法がある。(b) Technological techniques that have existed for a long time In order to meet the demands for low-temperature film formation and large-area crystal films, low-temperature film-forming technologies such as plasma CVD, thermal CVD, and vacuum evaporation have been applied to the surface of the substrate. A non-single-crystalline film such as an amorphous film or a polycrystalline film is obtained by a sputtering method, and the amorphous IIIJ film is converted into a polycrystalline film or +1 into a crystalline film, or the polycrystalline film is converted into a single-crystalline film. One example is a method of converting it into a membrane. As an example, for example, JP-A-63-17097
The prior art disclosed in Publication No. 6 includes a method of forming an amorphous film on the surface of a substrate at a low temperature in advance by plasma CVD, and then annealing by laser beam irradiation to obtain a polycrystalline film.
（ハ）発明が解決しようとする課題
然し乍らアニーリングに用いるレーザビームの強度分布
は概して中心部にピークを持つガウス分布を２するため
に、レーザビームの中心部と周縁部分とでは均一なアニ
ーリングを施すことができず、また多結晶膜の結晶粒径
はアニール時間と温度により決定されるために、再現比
の点で問題があった。(c) Problems to be Solved by the Invention However, in order to make the intensity distribution of the laser beam used for annealing generally have a Gaussian distribution with a peak at the center, uniform annealing should be performed at the center and peripheral portions of the laser beam. Moreover, since the crystal grain size of the polycrystalline film is determined by the annealing time and temperature, there is a problem in terms of reproduction ratio.
（ニ）課題を解決するための手段
本発明はこのような課題に鑑みて為されたものであって
、シリコンの超微粒子を静電吸着させるか、成るいは塗
布して基板表面に超微粒子膜を形成した後、レーザアニ
ールを施して多結晶シリコン膜を得ている。(d) Means for Solving the Problems The present invention has been made in view of the above problems, and consists of electrostatically adsorbing or coating ultrafine silicon particles onto the surface of a substrate. After forming the film, laser annealing is performed to obtain a polycrystalline silicon film.
〈ホ）作用
本発明によれば、シリコンの超微粒子を結晶成長の核と
しているので、成長じたシリコン膜の品質は高く、欠陥
の少ないシリコン膜が得られる。(e) Function According to the present invention, since ultrafine silicon particles are used as the nucleus for crystal growth, the quality of the grown silicon film is high and a silicon film with few defects can be obtained.
（へ）実施例
先ず静電吸着法を用いる本発明の第１の実施例について
説明する。(f) Example First, a first example of the present invention using an electrostatic adsorption method will be described.
第１の工程は、ガラス、セラミックなどの絶縁性材料か
らなる基板１の一表面に静電吸着法を用いてシリコンの
超微粒子２・・・を厚さ２５００〜３０００人に堆積さ
せて超微粒子ｖ３を形成させるところにある（第１図）
。このシリコンの超＠粒子２・・・とじては、ｆＭえば
、第１５回アモルファス物質の物性と応用セミナーテキ
スト「超微粒子」 （目本電！ＡＩｍ基礎研究所、飯島
澄男氏）に示されている直径数百大の真球に近い形状の
ｌｉｔ結晶を主成分としたものが用いられ、またそのシ
リコンの超微粒子２・・・はコロナ放電などを用いて正
または負に・摺電されて基板１表面に堆積、成膜される
。この静電吸着法によって得た微粒子膜３の密度は低い
ので、それを高めるために次の第２工程が実施される。In the first step, ultrafine silicon particles 2 are deposited to a thickness of 2,500 to 3,000 layers on one surface of a substrate 1 made of an insulating material such as glass or ceramic using electrostatic adsorption to form ultrafine particles. v3 is formed (Figure 1)
. This ultra-fine particle of silicon 2...Finally, fM is shown in the 15th Physical Properties and Application Seminar Text of Amorphous Materials "Ultrafine Particles" (Memotoden! AIm Basic Research Institute, Mr. Sumio Iijima). Lit crystals with a shape close to a true sphere with a diameter of several hundred are used as the main component, and the ultrafine silicon particles 2 are electrically charged in a positive or negative direction using corona discharge or the like. A film is deposited on the surface of the substrate 1. Since the density of the fine particle film 3 obtained by this electrostatic adsorption method is low, the following second step is carried out to increase the density.
第２の工程は、超微粒子膜３を表面に有する基板ｌを焼
結炉に入れ、その超微粒子ｖ３を焼結して焼結膜４とす
るところにある（第２図）、この時の焼結条件は、■■
、雰囲気中で６００℃、数時間が適当であろう。この焼
結処理の結果、密度が低かった超微粒子Ｖ＆３は密度の
高い焼結膜４となる。In the second step, the substrate l having the ultrafine particle film 3 on its surface is placed in a sintering furnace, and the ultrafine particles v3 are sintered to form a sintered film 4 (Fig. 2). The concluding conditions are ■■
, 600°C in an atmosphere for several hours would be appropriate. As a result of this sintering process, the ultrafine particles V&3 having a low density become a sintered film 4 having a high density.
最終工程は、基板１表面の焼結膜４にＡ「レーザ、エキ
シマレーザなどのハイパワーのレーザビーム５を照射し
て該焼結膜４にレーザアニールを施すところにある（第
３図）。具体的には例えばＡｒレーザを用いた場合、５
〜ＩＯＷ／ｃ−の出力のものが用いられ、ｔ！ｋｃｒａ
／秒の速度で走査される。このレーザアニール処理を施
すことによって、焼結膜４は溶融、再結晶化が行われ、
均一な粒径を有し、欠陥の少ない高品質の多結晶シリコ
ン膜６が得られる。The final step is to irradiate the sintered film 4 on the surface of the substrate 1 with a high-power laser beam 5 such as an A laser or excimer laser to perform laser annealing on the sintered film 4 (Figure 3). For example, when using an Ar laser, 5
The output of ~IOW/c- is used, and t! kcra
scanned at a speed of /second. By performing this laser annealing treatment, the sintered film 4 is melted and recrystallized,
A high quality polycrystalline silicon film 6 having a uniform grain size and few defects can be obtained.
次に塗布法を用いた本発明の第２の実施例について説明
する。Next, a second embodiment of the present invention using a coating method will be described.
第１の工程は、上記したシリコンの超微粒子２・・・を
溶媒、例えばアルコール系の有機バインダなどの溶媒７
に溶かしてシリコン超微粒子の溶剤を作り、その溶剤を
ガラス、セラミックなどの絶縁性材料からなる基板ｌの
一表面に塗布して２５００〜３０００人の厚みの超微粒
子膜３を得るところにある（第４図）。In the first step, the silicon ultrafine particles 2 described above are mixed with a solvent 7 such as an alcohol-based organic binder.
A solvent for silicon ultrafine particles is prepared by dissolving them in a liquid, and the solvent is applied to one surface of a substrate l made of an insulating material such as glass or ceramic to obtain an ultrafine particle film 3 with a thickness of 2500 to 3000 mm ( Figure 4).
第２の工程は、第１の工程で得た超微粒子膜３の溶媒７
を蒸発させるためにベーキング処理するところにあるる
。このベーキング処理は、先の実ＩＮ例の焼結丁程と同
様に、■、雰１川気中で６ （１０ｔ：、数時間施され
、その９１！：理の結果、超微粒子・膜３は溶媒７を含
まない密度の高い焼結膜４となる（第５図）。In the second step, the solvent 7 of the ultrafine particle film 3 obtained in the first step is
It is in the process of baking to evaporate it. This baking process was carried out in the same way as the sintering process in the previous example, in which the ultrafine particles and film 3. This results in a dense sintered film 4 that does not contain the solvent 7 (FIG. 5).
最終工程は、第１の実施例の場合と全く同様に、基板１
表面の焼結［４にハイパワーのレーザビーム５を照射し
て該焼結膜４にレーザアニールを施し、多結晶シリコン
膜６を得るころにある（第６図）。The final step is exactly the same as in the first embodiment.
The sintered film 4 is irradiated with a high-power laser beam 5 to perform laser annealing on the sintered film 4 to obtain a polycrystalline silicon film 6 (FIG. 6).
このようにして得られた多結晶シリコン膜６中に作成し
たＴＰＴの電子電界効果移動度は、１５０−３００ｃｍ
’／ Ｖ−ｓを示し、ブラズ？ＣＶＤ法を用いて得た従
来品のそれが４０〜５０ｃｍ”／ Ｖ−３であったこと
に鑑みると、本発明による特性改善は穎著であろう。尚
、上述の各実施例においては基板Ｉ全面に多結晶シリコ
ン膜６を形成していたが、シリコン超微粒：Ｆ膜を基板
表面の限られた個所にのみ設けることも考えられる。ｆ
９４えば液晶ＴＶのパネルの場合、中央にデイスプレィ
部、周辺部ノこ駆動回路部を設けることが多いが、その
周辺部にのみ本発明による多結晶シリコン１漠を設ける
手法を採用すれば、液晶ＴＶ用パネルをイｆ効に活用で
きる。The electron field effect mobility of TPT created in the polycrystalline silicon film 6 thus obtained is 150-300 cm.
'/ Show V-s, Blaz? Considering that the conventional product obtained using the CVD method was 40 to 50 cm''/V-3, the improvement in characteristics by the present invention is remarkable. Although the polycrystalline silicon film 6 was formed on the entire surface of the substrate, it is also conceivable to provide the silicon ultrafine grain:F film only at limited locations on the substrate surface.f
94 For example, in the case of a liquid crystal TV panel, a display part and a saw drive circuit part are often provided in the center, but if the method of providing polycrystalline silicon according to the present invention only in the peripheral part is adopted, the liquid crystal TV panels can be used effectively.
（ト）発明の効果
本発明は以りの説明から明らかなように、シリコンの超
微粒子を静電吸着、成るいは塗布によって基板表面に超
微粒子膜を形成した後、レーザアニールを施して多結晶
シリコン膜を得ているので、粒子径が揃い、欠陥の少な
い高品質の多結晶シリコン膜が得られる。その結果、本
発明によって得た多結晶シリコン膜中の電子移動度が高
いことから、ダイオードやトランジスタなどの素子特性
の向−１−を図ることができる。(G) Effects of the Invention As is clear from the description below, the present invention involves forming an ultrafine particle film on a substrate surface by electrostatic adsorption or coating of ultrafine silicon particles, and then applying laser annealing to form a multilayer film. Since a crystalline silicon film is obtained, a high quality polycrystalline silicon film with uniform grain sizes and few defects can be obtained. As a result, since the electron mobility in the polycrystalline silicon film obtained by the present invention is high, it is possible to improve the characteristics of devices such as diodes and transistors.
第１図〜第３図は本発明方法の第１の実施例をｔ程順に
示した断面図、第４図〜第６図は本発明方法の第２の実
施例を工程順に示した断面図である。
・茫板、２・・・シリコン超微粒子、
・超微粒子膜、４・・・焼結膜、
・・レーザビーム、６ ・・多結晶シリコン膜、・・溶
媒。Figures 1 to 3 are cross-sectional views showing the first embodiment of the method of the present invention in the order of steps, and Figures 4 to 6 are cross-sectional views showing the second embodiment of the method of the present invention in the order of steps. It is.・Solid plate, 2...Silicon ultrafine particles, ・Ultrafine particle film, 4...Sintered film,...Laser beam, 6...Polycrystalline silicon film,...Solvent.
Claims (2)
、焼結固定し、その焼結超微粒子にレーザビームの照射
によるレーザアニールを施して多結晶シリコン膜を得る
ことを特徴とした多結晶シリコン膜の製造方法。(1) A polycrystalline silicon film characterized by electrostatically adsorbing ultrafine silicon particles onto the surface of a substrate, fixing them by sintering, and subjecting the sintered ultrafine particles to laser annealing by irradiating a laser beam to obtain a polycrystalline silicon film. Method for manufacturing crystalline silicon film.
超微粒子の溶剤を作り、その溶剤を基板表面に塗布した
後、ベーキング処理して溶媒を蒸発させ、基板表面に残
った超微粒子にレーザビームの照射によるレーザアニー
ルを施して多結晶シリコン膜を得ることを特徴とした多
結晶シリコン膜の製造方法。(2) Dissolve ultrafine silicon particles in a solvent to create a solvent for ultrafine silicon particles, apply the solvent to the substrate surface, evaporate the solvent by baking, and apply a laser beam to the ultrafine particles remaining on the substrate surface. A method for producing a polycrystalline silicon film, characterized in that a polycrystalline silicon film is obtained by performing laser annealing by irradiation with a polycrystalline silicon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19581389A JPH0360016A (en) | 1989-07-27 | 1989-07-27 | Manufacture of polycrystalline silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19581389A JPH0360016A (en) | 1989-07-27 | 1989-07-27 | Manufacture of polycrystalline silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0360016A true JPH0360016A (en) | 1991-03-15 |
Family
ID=16347416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19581389A Pending JPH0360016A (en) | 1989-07-27 | 1989-07-27 | Manufacture of polycrystalline silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0360016A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5766989A (en) * | 1994-12-27 | 1998-06-16 | Matsushita Electric Industrial Co., Ltd. | Method for forming polycrystalline thin film and method for fabricating thin-film transistor |
| JP2011192908A (en) * | 2010-03-16 | 2011-09-29 | Toshiba Corp | Method of manufacturing polysilicon film, solar cell, and electronic device |
| WO2012127769A1 (en) * | 2011-03-22 | 2012-09-27 | パナソニック株式会社 | Method for forming semiconductor thin film, semiconductor device, method for producing semiconductor device, substrate, and thin film substrate |
| US11967516B2 (en) | 2019-02-05 | 2024-04-23 | Applied Materials, Inc. | Substrate support for chucking of mask for deposition processes |
-
1989
- 1989-07-27 JP JP19581389A patent/JPH0360016A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5766989A (en) * | 1994-12-27 | 1998-06-16 | Matsushita Electric Industrial Co., Ltd. | Method for forming polycrystalline thin film and method for fabricating thin-film transistor |
| JP2011192908A (en) * | 2010-03-16 | 2011-09-29 | Toshiba Corp | Method of manufacturing polysilicon film, solar cell, and electronic device |
| WO2012127769A1 (en) * | 2011-03-22 | 2012-09-27 | パナソニック株式会社 | Method for forming semiconductor thin film, semiconductor device, method for producing semiconductor device, substrate, and thin film substrate |
| JP5508535B2 (en) * | 2011-03-22 | 2014-06-04 | パナソニック株式会社 | Semiconductor thin film forming method, semiconductor device, semiconductor device manufacturing method, substrate, and thin film substrate |
| US9275855B2 (en) | 2011-03-22 | 2016-03-01 | Joled Inc. | Semiconductor thin-film forming method, semiconductor device, semiconductor device manufacturing method, substrate, and thin-film substrate |
| US11967516B2 (en) | 2019-02-05 | 2024-04-23 | Applied Materials, Inc. | Substrate support for chucking of mask for deposition processes |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100473996B1 (en) | Cystallization method of amorphous silicon | |
| DE10131249A1 (en) | Production of a film or a layer of semiconductor material comprises producing structures of repeating recesses on the surface of a semiconductor material | |
| JPS58132975A (en) | Semiconductor device and preparation thereof | |
| JPH0760807B2 (en) | Method for manufacturing semiconductor thin film | |
| JPH0360016A (en) | Manufacture of polycrystalline silicon film | |
| JP2765968B2 (en) | Method for manufacturing crystalline silicon film | |
| JPH02143415A (en) | Formation of single crystal silicon film | |
| CN1685521A (en) | Silicon thin film transistor, manufacturing method thereof, and display screen | |
| JPH0360017A (en) | Manufacture of polycrystalline silicon film | |
| JP2002083768A5 (en) | Method for manufacturing single crystal thin film | |
| JPH03250622A (en) | Method of forming semiconductor thin film | |
| JPH1055960A (en) | Method for converting a material in an amorphous semiconductor state into a material in a polycrystalline semiconductor state | |
| JP2800060B2 (en) | Method for manufacturing semiconductor film | |
| JPH0210719A (en) | Manufacture of polycrystalline layer having rough crystal structure for thin film semiconductor device | |
| JPS6360518A (en) | Growing method for crystal of semiconductor layer | |
| JP3384312B2 (en) | Method of forming crystalline silicon precursor film | |
| JP3136764B2 (en) | Method for producing chalcopyrite thin film | |
| JPH02188499A (en) | Manufacturing method of polycrystalline silicon film with large grain size | |
| JPH02184594A (en) | Production of single crystal thin film | |
| KR100370114B1 (en) | Equipment for crystallization of amorphous silicon | |
| JPS6213815B2 (en) | ||
| JPH0397698A (en) | Thin film formation method | |
| JPH11145062A (en) | Crystalline silicon prestage film, its forming method, crystalline silicon film and its forming method | |
| JPS63239151A (en) | Method of forming superconducting ceramics | |
| JPS58112324A (en) | Manufacture of semiconductor device |