JPH0360017A - Manufacture of polycrystalline silicon film - Google Patents
Manufacture of polycrystalline silicon filmInfo
- Publication number
- JPH0360017A JPH0360017A JP19581489A JP19581489A JPH0360017A JP H0360017 A JPH0360017 A JP H0360017A JP 19581489 A JP19581489 A JP 19581489A JP 19581489 A JP19581489 A JP 19581489A JP H0360017 A JPH0360017 A JP H0360017A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon film
- silicon
- film
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 14
- 239000011856 silicon-based particle Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 239000002245 particle Substances 0.000 abstract description 6
- 239000011159 matrix material Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract 1
- 239000011882 ultra-fine particle Substances 0.000 description 9
- 238000000137 annealing Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明は多結晶シリコン膜の製漬方法に関する。[Detailed description of the invention] (b) Industrial application field The present invention relates to a method for manufacturing a polycrystalline silicon film.
（ロ）従来の技術
結晶漠の低温成膜要求や大面積化要求を実現する方法と
して、基板表面に低温成膜技術であるプラズマＣＶＤ法
、熱ＣＶＤ法、真空蒸着法、成るいはスパッタ法などに
より、非晶質膜や多結晶膜などの非小結晶膜を得、その
非晶質膜を多結晶膜や単結晶膜に変換したり、成るいは
多結晶膜をＩｌｌ結晶膜に変換する方法が挙げられる。(b) As a method to realize the low-temperature film formation requirements and large-area requirements that are beyond conventional technology, low-temperature film formation techniques such as plasma CVD, thermal CVD, vacuum evaporation, or sputtering can be used on the substrate surface. Obtain a non-small crystal film such as an amorphous film or a polycrystalline film by, for example, converting the amorphous film into a polycrystalline film or a single crystal film, or converting a polycrystalline film into an Ill crystal film. One method is to do so.
その−例として、例えば特開昭６３−１７０９７６号公
報に開示された先行技術は、予め基板表面にプラズマＣ
ＶＤ法により非晶質膜を低温成膜し、その後にレーザビ
ーム照射によるアニーリングを施し、多結晶膜を得る方
ｉ去がある。As an example, the prior art disclosed in Japanese Patent Application Laid-open No. 170976/1983 has a technique in which plasma carbon is applied to the surface of the substrate in advance.
One method is to form an amorphous film at a low temperature using the VD method, and then perform annealing by laser beam irradiation to obtain a polycrystalline film.
（ハ）発明が解決しようとした課題
然し乍らアニーリングに用いるレーザビームの強度分布
は概して中心部にピークを持つガウス分布を呈するため
に、レーザビームの中心部と周縁部分とでは均一なアニ
ーリングを施すことができず、また多結晶膜の結晶粒径
はアニール時間と温度により決定されるために、１ｑ現
注の点で問題があった。(c) Problems to be Solved by the Invention However, since the intensity distribution of the laser beam used for annealing generally exhibits a Gaussian distribution with a peak at the center, it is necessary to perform uniform annealing at the center and peripheral portions of the laser beam. Moreover, since the crystal grain size of the polycrystalline film is determined by the annealing time and temperature, there was a problem in terms of 1q current injection.
（ニ）課題を解決するための手段
本発明はこのような問題点に鑑みて為されたものであっ
て、ノ、（板表面にシリコンの超微粒Ｙ・を散在させた
後、そのシリコンの超微粒子も含め基板表面にアモルフ
ァスシリコン膜を成長せしめ、続いて上記シリコンの超
微粒子を結晶成長の核としてアモルファスシリコン膜を
多結晶化するものである。(d) Means for Solving the Problems The present invention has been made in view of the above-mentioned problems. An amorphous silicon film including ultrafine particles is grown on the surface of the substrate, and then the amorphous silicon film is polycrystallized using the ultrafine silicon particles as nuclei for crystal growth.
（ホ）作用
本発明によれば、シリコンの超微粒子を核としてアモル
ファスシリコン膜を結晶化しているので、欠陥の少ない
高品質の多結晶シリコン膜を得ることができる。(E) Function According to the present invention, since an amorphous silicon film is crystallized using ultrafine silicon particles as nuclei, a high-quality polycrystalline silicon film with few defects can be obtained.
（へ）実施例
本発明の第１の工程は、ガラスなどの物理的に安定な材
質からなる基板１表面に多結晶シリコン膜成長の核とな
るシリコンの超微粒子２・・・を散７Ｅさせるとことに
ある（第１図）。このシリコンの超微粒子２・・・とじ
ては、例えば、第１５回アモルファス物質の物性と応用
セミナーテキスト「超微粒子」（１１本電気（掬〕、チ
礎研究所、飯島７０男氏）に示されている醒径数百人の
真球に近い＋Ｂ結品を１：、成分としたものが用いられ
、またシリコンの超微粒子２・・・の散／Ｅ状況として
は大略ｌＯ〜１００個／ｍｍ’程度が適切である。(F) Example The first step of the present invention is to scatter ultrafine silicon particles 2, which will become the nucleus of polycrystalline silicon film growth, on the surface of a substrate 1 made of a physically stable material such as glass. In particular (Figure 1). These ultrafine particles of silicon 2... are described, for example, in the 15th Physical Properties and Applications Seminar Text of Amorphous Materials "Ultrafine Particles" (11th Denki (Kiki), Chisei Research Institute, Mr. Iijima, 70). A mixture of +B particles with a diameter of several hundred people close to a perfect sphere is used as a component, and the scattering of ultrafine silicon particles 2/E is approximately 10 to 100 pieces/E. mm' is appropriate.
尚、この超微粒子２・・・を散在させる手法としては次
の方法が考えられる。Note that the following method can be considered as a method for scattering the ultrafine particles 2.
■マトリックス状にＱ−５Ｗ付ＹＡＧレーザ繰り返し周
波数２ＫＩＩｚや、ルビーレーザなどを用いて１ｉＩ１
１のビーム径、ビームパワー０．５− ｔｗ、’ ＣＩ
’Ｑ’でガラス基板１表面を照射する。■ YAG laser with Q-5W repetition frequency 2KIIz, ruby laser, etc. in matrix form to 1iI1
1 beam diameter, beam power 0.5-tw,' CI
The surface of the glass substrate 1 is irradiated with 'Q'.
■レーザビームの照射を受けた基板ｌを弗酸中に浸漬し
、レーザビームの照射を受けた個所に直径数百人の半円
状の穴を形成する。(2) The substrate l that has been irradiated with the laser beam is immersed in hydrofluoric acid, and a semicircular hole of several hundred diameters is formed at the location that has been irradiated with the laser beam.
■半円状の穴を有する基板Ｉをシリコンの超微粒子２・
・・の粉末中に入れて５００〜６００℃に加熱し状態で
超音波を印加し、マトリックス状の半円状穴にシリコン
の超微粒子２・・・を嵌め込む。■Substrate I with semicircular holes is covered with silicon ultrafine particles 2.
. . and heated to 500 to 600° C. while applying ultrasonic waves to fit the silicon ultrafine particles 2 into the matrix-like semicircular holes.
■基板ｌを冷却することによって、半円状穴に嵌め込ま
れたシリコンの超微粒子２・・・を基板ｌに固定する。(2) By cooling the substrate 1, the silicon ultrafine particles 2 fitted into the semicircular holes are fixed to the substrate 1.
本発明の第２の工程は、マトリックス状にシリコンの超
微粒子２・・・が嵌め込まれた基板１表面に、プラズマ
ＣＶ Ｉ）法、熱ＣＶＤ法、真空蒸着法、あるいはスパ
ッタ法などにより２０００〜３０００人の厚みにアモル
ファスシリコン膜３を形成するところにある（第２図）
。In the second step of the present invention, the surface of the substrate 1 in which ultrafine silicon particles 2 are fitted in a matrix is coated with 2,000~ This is where an amorphous silicon film 3 is formed to a thickness of 3000 mm (Figure 2).
.
本発明の最終工程は第３図に示すように、水素ガス雰囲
気中で基板１を６００℃に加熱して数時間放置し、基板
１表面にマトリックス状に散在させたシリコンの超微粒
子２・・・を核としてアモルファスシリコン膜３を同相
成長によって多結晶４化して多結晶膜シリコン５とした
ところにある。この多結晶膜シリコン５を構成する多結
晶・１の粒径はこの固相成長条件にも依７ｆするが、１
ミとしてシリコンの超微粒子−２・・のＪ５５ミ表面に
おける散７Ｅ状況に左右される。As shown in FIG. 3, the final step of the present invention is to heat the substrate 1 to 600° C. in a hydrogen gas atmosphere, leave it for several hours, and form ultrafine silicon particles 2 scattered in a matrix on the surface of the substrate 1. The amorphous silicon film 3 is made into a polycrystalline silicon film 5 by in-phase growth using the . . . as a core. The grain size of polycrystalline 1 constituting this polycrystalline silicon film 5 depends on the solid phase growth conditions, but 1
It depends on the state of dispersion of silicon ultrafine particles-2 on the J55 surface.
このようにして得られた多結晶＋１シリコン５は、均一
な粒径を有し、欠陥の少ない高品質を某する。The thus obtained polycrystalline +1 silicon 5 has a uniform grain size and is of high quality with few defects.
このようにしてｉ！）られた多結晶シリコン膜５中の’
ｌ’ｌｉ ／”＋ｔ；界効果移動度は１５０〜３００ｃ
ｍＩ／ｖＳを示し、プラズマ（： Ｖ 方法を用いて得
た従来品のそれが４０〜５０ｃｍ’／Ｖ−ｓであったこ
とに鑑みると、本発明による特性改善は顕若であろう。In this way i! ) in the polycrystalline silicon film 5
l'li /"+t; field effect mobility is 150-300c
Considering that the conventional product obtained using the plasma (: V method) had a mI/vS of 40 to 50 cm'/V-s, the improvement in characteristics by the present invention is significant.
尚、上述の各実施例においては基板１全面に多結晶シリ
コン膜５を形成していたが、この多結晶シリコン膜５を
基板表面の限られた個所にのみ設けることも考えられる
。例えば液晶ＴＶのパネルの場合、中央にデイスプレィ
部、周辺部に駆動回路部を設けることが多いが、その周
辺部にのみ本発明方法を用いて多結晶シリコン膜を設け
てそこにデイスプレィ部を駆動する駆動回路部を設ける
手法を採用すれば、液晶ＴＶ用戸パネル有効に活用でき
る。In each of the above-described embodiments, the polycrystalline silicon film 5 was formed over the entire surface of the substrate 1, but it is also conceivable to provide the polycrystalline silicon film 5 only at limited locations on the surface of the substrate. For example, in the case of a liquid crystal TV panel, a display section is often provided in the center and a drive circuit section is provided at the periphery.However, using the method of the present invention, a polycrystalline silicon film is provided only in the periphery and the display section is driven there. If a method is adopted in which a driving circuit section is provided, the LCD TV door panel can be effectively utilized.
（ト）発明の効果
本発明は以上の説明から明らかなように、基板表面にシ
リコンの超微粒子を故Ｙ［させた後、そのシリコンの超
微粒子も含め基板表面にアモルファスシリコン膜を成長
せしめ、そのシリコンの超微粒子・を結晶成１その核と
してアモルファスシリコン膜を多結晶化しているので、
粒子・径が揃い、欠陥の少ない高品質の多結晶シリコン
膜が得られる。(g) Effects of the Invention As is clear from the above description, the present invention includes ultrafine silicon particles on the surface of a substrate, and then an amorphous silicon film is grown on the surface of the substrate including the ultrafine silicon particles. Since the amorphous silicon film is polycrystallized using the ultrafine particles of silicon as the core of crystallization,
A high-quality polycrystalline silicon film with uniform grains and diameters and few defects can be obtained.
その結果、本発明によって得た多結晶シリコン膜中の電
子移動度が高いことから、ダイオードやトランジスタな
どの素子特性のｌＦ＋ｌ上を図ることができる。As a result, since the electron mobility in the polycrystalline silicon film obtained by the present invention is high, the characteristics of devices such as diodes and transistors can be improved to 1F+1 or higher.
第１図〜第３図は本発明方法を工程順に示した断面図で
ある。
１・・・基板、２・・シリコン超微粒子、３・・・アモ
ルファスシリコン；漠、４・・・多結晶、５・・・多結
晶シリコン膜。1 to 3 are cross-sectional views showing the method of the present invention in the order of steps. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Silicon ultrafine particles, 3...Amorphous silicon; 4...Polycrystalline, 5...Polycrystalline silicon film.
Claims (2)
そのシリコンの超微粒子も含め基板表面にアモルファス
シリコン膜を成長せしめ、続いて上記シリコンの超微粒
子を結晶成長の核としてアモルファスシリコン膜を多結
晶化することを特徴とした多結晶シリコン膜の製造方法
。(1) After scattering ultrafine silicon particles on the substrate surface,
A method for producing a polycrystalline silicon film, which comprises growing an amorphous silicon film on the surface of a substrate including the ultrafine silicon particles, and then polycrystallizing the amorphous silicon film using the ultrafine silicon particles as nuclei for crystal growth. .
み散在されていることを特徴とした請求項１記載の多結
晶シリコン膜の製造方法。(2) The method for manufacturing a polycrystalline silicon film according to claim 1, wherein the ultrafine silicon particles are scattered only at desired locations on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1195814A JP2792926B2 (en) | 1989-07-27 | 1989-07-27 | Method for manufacturing polycrystalline silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1195814A JP2792926B2 (en) | 1989-07-27 | 1989-07-27 | Method for manufacturing polycrystalline silicon film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0360017A true JPH0360017A (en) | 1991-03-15 |
| JP2792926B2 JP2792926B2 (en) | 1998-09-03 |
Family
ID=16347434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1195814A Expired - Fee Related JP2792926B2 (en) | 1989-07-27 | 1989-07-27 | Method for manufacturing polycrystalline silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2792926B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100270620B1 (en) * | 1992-10-19 | 2000-12-01 | 윤종용 | Method of manufacturing polycrystalline silicon thin film |
| KR100494321B1 (en) * | 1997-12-31 | 2005-08-31 | 주식회사 하이닉스반도체 | Polycrystalline Silicon Film Formation Method of Semiconductor Device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002299238A (en) * | 2001-04-04 | 2002-10-11 | Sony Corp | Method for forming polycrystalline semiconductor thin film and method for manufacturing semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57194517A (en) * | 1981-05-27 | 1982-11-30 | Toshiba Corp | Manufacture of semiconductor crystal film |
| JPS6276715A (en) * | 1985-09-30 | 1987-04-08 | Sony Corp | Forming method for single crystal silicon thin film |
-
1989
- 1989-07-27 JP JP1195814A patent/JP2792926B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57194517A (en) * | 1981-05-27 | 1982-11-30 | Toshiba Corp | Manufacture of semiconductor crystal film |
| JPS6276715A (en) * | 1985-09-30 | 1987-04-08 | Sony Corp | Forming method for single crystal silicon thin film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100270620B1 (en) * | 1992-10-19 | 2000-12-01 | 윤종용 | Method of manufacturing polycrystalline silicon thin film |
| KR100494321B1 (en) * | 1997-12-31 | 2005-08-31 | 주식회사 하이닉스반도체 | Polycrystalline Silicon Film Formation Method of Semiconductor Device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2792926B2 (en) | 1998-09-03 |
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