JPH0360059A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0360059A JPH0360059A JP1195523A JP19552389A JPH0360059A JP H0360059 A JPH0360059 A JP H0360059A JP 1195523 A JP1195523 A JP 1195523A JP 19552389 A JP19552389 A JP 19552389A JP H0360059 A JPH0360059 A JP H0360059A
- Authority
- JP
- Japan
- Prior art keywords
- package
- semiconductor chip
- cap
- main surface
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に係り、特に熱を発しやす(・半導
体装置や、IC,LSIなどの半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor devices, and particularly to semiconductor devices that easily generate heat, such as semiconductor devices, ICs, and LSIs.
第2図において、従来の半導体装置では、パッケージの
基板3の内部の主面上に、半導体チップ1を固着し、こ
の半導体チップ1の上のパッドと基板3上の導体パター
ンとをポンディング・ワイヤ4で電気的に接続していた
にすぎない。このワイヤ4及び半導体チップ1上に、離
間して、パッケージのキャップが設けられていた。In FIG. 2, in the conventional semiconductor device, a semiconductor chip 1 is fixed onto the main surface inside a substrate 3 of a package, and pads on the semiconductor chip 1 and conductor patterns on the substrate 3 are connected by bonding. They were simply electrically connected by wire 4. A package cap was provided on the wire 4 and the semiconductor chip 1, spaced apart from each other.
従来のこの種の半導体装置では、パッケージした中に、
ガス又は単に空気が入っているだけであった。In conventional semiconductor devices of this type, inside the package,
It was filled with gas or simply air.
前述したパッケージした中にガス又は単に空気が入って
いるだけの半導体装置では、半導体チップ1の上主面か
ら放出する熱は、ガス又は空気を介しての放出しか行な
っていないため、熱が放出しにくいという欠点があった
。In the semiconductor device described above in which gas or simply air is contained in the package, the heat released from the upper main surface of the semiconductor chip 1 is only released through the gas or air, so the heat is released. The drawback was that it was difficult to do.
また半導体チップの下主面から、パッケージを通して、
はとんどの熱が放出するため、パッケージが熱を帯びて
しまい、パッケージの強度の低下や、寿命の短縮等の欠
点があった、
本発明の目的は、前記欠点が解決され、熱の放出が良好
で、パッケージ強度を向上させ、寿命を延した半導体装
置を提供することにある。Also, from the bottom main surface of the semiconductor chip, through the package,
The purpose of the present invention is to solve the above-mentioned drawbacks and to improve the heat dissipation. The object of the present invention is to provide a semiconductor device with good performance, improved package strength, and extended life.
本発明の半導体装置の構成は、パッケージの基板上に固
着された半導体チ、ブの主面に熱導伝性の良好な物質を
付着させ、前記物質を部分的に前記パッケージのキャッ
プへ接触させてなることを特徴とする。The structure of the semiconductor device of the present invention is such that a material having good thermal conductivity is attached to the main surface of a semiconductor chip fixed on a substrate of a package, and the material is brought into partial contact with the cap of the package. It is characterized by being
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図(a)は本発明の一実施例の半導体装置を示す断
面図、第1図(b)は図(a)の熱導伝性の高い物質部
分を示す斜視図である。FIG. 1(a) is a sectional view showing a semiconductor device according to an embodiment of the present invention, and FIG. 1(b) is a perspective view showing a portion of a material having high thermal conductivity in FIG. 1(a).
第1図(a) 、 (b)において、本実施例は、パッ
ケージされた半導体チップ1の上上面に、熱導伝性の高
い物質2を付着させ、その物質2の少なくとも一部5を
、パッケージのキャップ6へ接触させることにより、構
成される。ICチップlで発生した熱は、熱導伝性の高
い物質2から上記物質の少なくとも一部5を伝わり、パ
ッケージのキャップ6から外部へ放出される。In FIGS. 1(a) and 1(b), in this embodiment, a highly thermally conductive substance 2 is attached to the upper surface of a packaged semiconductor chip 1, and at least a portion 5 of the substance 2 is attached to the upper surface of a packaged semiconductor chip 1. It is configured by contacting the cap 6 of the package. Heat generated in the IC chip 1 is transmitted from the highly thermally conductive material 2 through at least a portion 5 of the material, and is emitted to the outside from the cap 6 of the package.
尚、第1図(b)において、キャップ6の部分が除去さ
れて、一部5等が示されている。In FIG. 1(b), a portion of the cap 6 is removed to show a portion 5 and the like.
以上説明したように、本発明は、熱導電性の高い物質を
半導体チップの上主面に付着させ、この物質の少なくと
も一部をパッケージのキャップへ接触させているため半
導体チップで発生した熱を、容易にパッケージ外へ放出
することができ、また半導体チップの上土面から熱を放
出することにより、半導体チップの下主面からパッケー
ジを通して放出する熱が減少し、パッケージの耐久性を
高めることができるという効果がある。As explained above, in the present invention, a substance with high thermal conductivity is attached to the upper main surface of a semiconductor chip, and at least a part of this substance is brought into contact with the cap of the package, so that heat generated in the semiconductor chip is absorbed. By discharging heat from the upper surface of the semiconductor chip, the heat dissipated from the lower main surface of the semiconductor chip through the package is reduced, increasing the durability of the package. It has the effect of being able to.
第1図(a)は本発明の一実施例の半導体装置を示す断
面図、第1図(b)は第1図(a)の内部の一部を示す
斜視図、第2図は従来の半導体装置を示す断面図である
。
1・・・・・・半導体チップ、2・・・・・・熱導伝性
の高い物質、5・・・・・・一部、3・・・・・・パッ
ケージの基板、4・・・・・・ボンディングワイヤ、6
・・・・・・キャップ。FIG. 1(a) is a sectional view showing a semiconductor device according to an embodiment of the present invention, FIG. 1(b) is a perspective view showing a part of the inside of FIG. 1(a), and FIG. 2 is a conventional semiconductor device. FIG. 2 is a cross-sectional view showing a semiconductor device. 1... Semiconductor chip, 2... Highly thermally conductive material, 5... Part, 3... Package substrate, 4... ...bonding wire, 6
······cap.
Claims (1)
熱導伝性の良好な物質を付着させ、前記物質を部分的に
前記パッケージのキャップへ接触させてなることを特徴
とする半導体装置。1. A semiconductor device, characterized in that a substance having good thermal conductivity is attached to the main surface of a semiconductor chip fixed on a substrate of a package, and the substance is partially brought into contact with a cap of the package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1195523A JPH0360059A (en) | 1989-07-27 | 1989-07-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1195523A JPH0360059A (en) | 1989-07-27 | 1989-07-27 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0360059A true JPH0360059A (en) | 1991-03-15 |
Family
ID=16342509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1195523A Pending JPH0360059A (en) | 1989-07-27 | 1989-07-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0360059A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177288A (en) * | 1992-12-03 | 1994-06-24 | Nec Corp | Semiconductor device |
| JPH07254668A (en) * | 1994-01-11 | 1995-10-03 | Samsung Electron Co Ltd | Semiconductor package for high heat emission |
| US5485039A (en) * | 1991-12-27 | 1996-01-16 | Hitachi, Ltd. | Semiconductor substrate having wiring conductors at a first main surface electrically connected to plural pins at a second main surface |
-
1989
- 1989-07-27 JP JP1195523A patent/JPH0360059A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5485039A (en) * | 1991-12-27 | 1996-01-16 | Hitachi, Ltd. | Semiconductor substrate having wiring conductors at a first main surface electrically connected to plural pins at a second main surface |
| JPH06177288A (en) * | 1992-12-03 | 1994-06-24 | Nec Corp | Semiconductor device |
| JPH07254668A (en) * | 1994-01-11 | 1995-10-03 | Samsung Electron Co Ltd | Semiconductor package for high heat emission |
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