JPH0360136A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPH0360136A JPH0360136A JP1194077A JP19407789A JPH0360136A JP H0360136 A JPH0360136 A JP H0360136A JP 1194077 A JP1194077 A JP 1194077A JP 19407789 A JP19407789 A JP 19407789A JP H0360136 A JPH0360136 A JP H0360136A
- Authority
- JP
- Japan
- Prior art keywords
- transparent resin
- transparent
- solution
- semiconductor element
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01515—Forming coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、固体撮像素子などを含み透光性窓を有する半
導体装置およびその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device including a solid-state image sensor and the like and having a light-transmitting window, and a method for manufacturing the same.
固体撮像装置は、外部から光を取り入れることができる
ようにアルミナまたは石英ガラスなどの透光部材が取り
つけられたセラミックパッケージにより半導体素子が封
止されている。ところが、この構造では封止材料が高価
であり透光部材の貼付けや埋込みのために特別の工程が
必要となり、他の半導体装置で行なわれている樹脂モー
ルドに比べて高価になる。これを解決するために樹脂材
料を用いて封止する構造が知られている。第３図は、特
開昭５９−１６７０３７号公報に開示されている半導体
装置の断面図である。１は半導体素子で、マウント部材
２を介してリードフレームのアイランド３に装着されて
いる。また半導体素子ｌはボンディング線４を介してリ
ードフレームのリード部５に接続されている。半導体素
子１上には透明樹脂６によって透光部材７が接着されて
いる。透光部材７の透明樹脂６との接着面に対向する他
の一面８と、リードフレームの外部リード部９とが露出
するように封止樹脂１０により全体が封止されている。In a solid-state imaging device, a semiconductor element is sealed in a ceramic package to which a light-transmitting member such as alumina or quartz glass is attached so that light can be taken in from the outside. However, in this structure, the sealing material is expensive and a special process is required for attaching and embedding the light-transmitting member, making it more expensive than resin molding used in other semiconductor devices. To solve this problem, a sealing structure using a resin material is known. FIG. 3 is a sectional view of a semiconductor device disclosed in Japanese Unexamined Patent Publication No. 59-167037. Reference numeral 1 denotes a semiconductor element, which is mounted on an island 3 of a lead frame via a mounting member 2. Further, the semiconductor element 1 is connected to a lead portion 5 of a lead frame via a bonding wire 4. A light-transmitting member 7 is bonded onto the semiconductor element 1 with a transparent resin 6. The entire structure is sealed with a sealing resin 10 so that the other surface 8 of the light-transmitting member 7 facing the adhesive surface with the transparent resin 6 and the external lead portion 9 of the lead frame are exposed.
透明樹脂６は、半導体素子１のメモリ部１１．Ａｆｉパ
ッド部１３を含む面およびボンディング線４の先端のボ
ール部１２を含む−部を被覆している。、透光部材７は
外部からの光線を半導体素子上の受光部１１に照射する
窓の役割りをする。The transparent resin 6 covers the memory portion 11. of the semiconductor element 1. The surface including the Afi pad portion 13 and the negative portion including the ball portion 12 at the tip of the bonding wire 4 are covered. The light-transmitting member 7 serves as a window that irradiates light from the outside onto the light-receiving section 11 on the semiconductor element.
［発明が解決しようとする課題］
前述の半導体装置は厳しい温度サイクル試験を行なうと
、温度サイクル時の応力によってボンディング線４が断
線する場合がある。これは、ボンディング１ｉＡ４はボ
ール部１２と細線よりなるボンディング線の４の一部は
透明樹脂６で被覆され残りの部分は封止樹脂１０で被覆
され、透明樹脂６、封止樹脂１０に接着し固定されてお
り、透明樹脂６、封止樹脂１０と例えばＡｕからなるボ
ンディング線４の熱膨張係数が異なるため、低温放置と
高温放置を交互に繰返す温度サイクル試験では、ボンデ
ィング線４が繰返し応力を受は断線するためと考えられ
る。封止樹脂１０は無機酸化物などを添加して、ボンデ
ィング線４の熱膨張係数に近づけているが、透明樹脂６
では光線を透過させるため無機酸化物などの添加はなく
、ボンディングｍ４と熱膨張係数の差が大きく応力も大
きくなる。[Problems to be Solved by the Invention] When the above-described semiconductor device is subjected to a severe temperature cycle test, the bonding wire 4 may break due to stress during the temperature cycle. This means that in the bonding 1iA4, a part of the ball part 12 and the bonding wire 4 made of a thin wire are covered with the transparent resin 6, and the remaining part is covered with the sealing resin 10, and the bonding wire 4 is bonded to the transparent resin 6 and the sealing resin 10. Since the thermal expansion coefficients of the transparent resin 6, the sealing resin 10, and the bonding wire 4 made of Au, for example, are different from each other, the bonding wire 4 is subjected to repeated stress in a temperature cycle test in which left at low temperature and left at high temperature are alternately repeated. This is thought to be because the receiver is disconnected. The sealing resin 10 is made to have a coefficient of thermal expansion close to that of the bonding wire 4 by adding an inorganic oxide, etc., but the transparent resin 6
In order to transmit light, no inorganic oxide is added, and the difference in thermal expansion coefficient from bonding m4 is large, resulting in large stress.
そのため、ボンディング、＆！４を封止樹脂１０のみで
被覆する構造も提案されているが、この構造は耐温度サ
イクル性は優れているが封止樹脂１０と透光部材７およ
び透明樹脂６との界面から水分が侵入し、ＡＱ配線部で
ＡＱ腐食が生じやすくなるという問題点がある。この問
題を解決するために特開昭６２−２５７７５７号公報に
公示されているように、透明樹脂を溶媒に溶かし、この
溶液を素子表面に滴下し溶媒を蒸発させて透明樹脂の膜
を素子のＡＩ２パッド部を覆い、かつ、強度の高いボン
ディングワイヤ線のボール部の高さ以下の厚みにする方
法がある。しかし、ながら、この方法で製作した透明樹
脂層は表面が平坦でなく透明部材を接着した際に樹脂と
の界面にボイド（空孔）が生じる問題点および溶液塗布
後素子表面全体を被覆する時間が長いという問題があっ
た。Therefore, bonding, &! A structure in which 4 is covered only with the sealing resin 10 has also been proposed, but this structure has excellent temperature cycle resistance, but moisture can enter from the interface between the sealing resin 10, the transparent member 7, and the transparent resin 6. However, there is a problem in that AQ corrosion tends to occur in the AQ wiring section. In order to solve this problem, as disclosed in Japanese Patent Application Laid-Open No. 62-257757, a transparent resin is dissolved in a solvent, this solution is dropped onto the surface of the element, the solvent is evaporated, and a transparent resin film is formed on the element. There is a method of covering the AI2 pad part and making the thickness less than the height of the ball part of the high-strength bonding wire wire. However, the surface of the transparent resin layer produced using this method is not flat, and there are problems in that voids occur at the interface with the resin when the transparent member is bonded, and it takes a long time to cover the entire element surface after applying the solution. The problem was that it was long.
本発明の目的は、かかる問題点を解決することにある。An object of the present invention is to solve such problems.
［課題を解決するための手段］
上記目的を達成するためにとられた本発明の構成は、中
央部に受光部が設けられ、外周部にボンディング線が取
付けられるバッド部が設けられている半導体素子の表面
に透明樹脂を介して透光部材の一面が配置され、該透光
部材の他の一面が露出した状態で樹脂で封止されている
半導体装置において、前記メモリ部と前記パッド部を封
止する透明樹脂層を透明樹脂と溶剤からなる溶液を噴霧
状にして素子上に塗布し、乾燥し溶剤を除去したもので
ある。[Means for Solving the Problems] The structure of the present invention adopted to achieve the above object is a semiconductor in which a light receiving part is provided in the center part and a pad part to which a bonding wire is attached is provided in the outer peripheral part. In a semiconductor device in which one surface of a light-transmitting member is disposed on the surface of an element via a transparent resin, and the other surface of the light-transmitting member is sealed with resin in an exposed state, the memory portion and the pad portion may be connected to each other. The transparent resin layer to be sealed is formed by spraying a solution of a transparent resin and a solvent onto the device, and drying to remove the solvent.
［作用コ
本発明では、透明樹脂と溶剤からなる溶液を用いること
により最適粘度での噴霧状塗布が可能となる。噴霧状で
素子上に塗布することにより、短時間で透明樹脂成分が
均一に素子上に分布し、溶液除去後平坦な透明４ｉ￥１
脂層が形成される。透明樹脂としては、シリコーン樹脂
が好ましく、特に側鎖にフェニル基を主体としたポリシ
ロキサン骨格を持つ付加型シリコーンゴム、シリコーン
ゲルが好ましい。[Function] In the present invention, by using a solution consisting of a transparent resin and a solvent, it is possible to perform spray coating at an optimum viscosity. By applying the spray onto the device, the transparent resin component is uniformly distributed on the device in a short time, and after removing the solution, it becomes flat and transparent 4i￥1
A fatty layer is formed. As the transparent resin, silicone resins are preferred, and addition type silicone rubbers and silicone gels having a polysiloxane skeleton mainly composed of phenyl groups in side chains are particularly preferred.
溶剤としては、上記透明樹脂を十分溶かす化合物、特に
１．１．２−トリクロロ−１，２，，２トリフルオロエ
タンが好ましい。The solvent is preferably a compound that sufficiently dissolves the transparent resin, particularly 1,1,2-trichloro-1,2,,2-trifluoroethane.
［実施Ｎ］ 以下１本発明の一実施例を第１図で説明する。[Implementation N] An embodiment of the present invention will be described below with reference to FIG.
第上図は一実施例の断面図で、第３図と同一の部分には
同一の符号が付しである。この実施例の半導体装置は固
定撮像素子で、半導体素子ｌはリードフレームのアイラ
ンド３の上に装着されている。半導体素子上は３０μｍ
φのＡｕ線からなるボンディング線４でリードフレーム
のリード部５に接続されている。半導体素子１の受光部
、ＡＭパッド部１３．ボンディングｇ４のボール部１２
の一部をコートする透明樹脂層６が形成され、透明樹脂
６によってホウケイ酸ガラスの透光部材７が固定されて
いる。この実施例の半導体装置作製に当っては、シリコ
ーン系ポリマ６の未硬化物をトリクロルトリフルオロエ
タンに溶かした３％の溶液を半導体素子１上に１０μα
噴Ｖ＃塗布し室温で１時間風乾して平坦で薄い暦を形成
したのち、透光部材７をシリコーン系ポリマの上に設置
し１５０℃で１ｈ硬化した後、構成物全体をエポキシ系
ポリマからなる封止樹脂１０で封止する。The upper figure is a sectional view of one embodiment, and the same parts as in FIG. 3 are given the same reference numerals. The semiconductor device of this embodiment is a fixed image sensor, and the semiconductor element 1 is mounted on an island 3 of a lead frame. 30μm on semiconductor element
It is connected to a lead portion 5 of a lead frame by a bonding wire 4 made of an Au wire having a diameter of φ. Light receiving section of semiconductor element 1, AM pad section 13. Ball part 12 of bonding g4
A transparent resin layer 6 is formed to coat a part of the transparent resin layer 6, and a transparent member 7 made of borosilicate glass is fixed by the transparent resin 6. In manufacturing the semiconductor device of this example, a 3% solution of an uncured silicone polymer 6 dissolved in trichlorotrifluoroethane was placed on the semiconductor element 1 at a concentration of 10 μα
After spray V# was applied and air-dried at room temperature for 1 hour to form a flat and thin calendar, the transparent member 7 was placed on top of the silicone polymer and cured at 150°C for 1 hour, after which the entire structure was coated with epoxy polymer. It is sealed with a sealing resin 10.
［発明の効果］
本発明は、耐温度サイクル性および耐湿性に優れたパッ
ケージに窓を有する半導体装置を提供可能とするもので
、産業上の効果の大なるものである。[Effects of the Invention] The present invention makes it possible to provide a semiconductor device having a window in a package with excellent temperature cycle resistance and moisture resistance, and has great industrial effects.
第１図は本発明の半導体装置の一実施例の断面図、第２
図は本発明の半導体装置の製造方法の説明図、第３図は
従来の半導体装置の断面図である。
符号の説明
１・・・半導体素子、２・・・接着剤、３・・・マウン
ト部。
４・・・ボンディング線、６・・・透明樹脂、７・・・
透光部材、９・・・リード部、１０・・・封止樹脂、１
１・・・受光部、１２・・・ボール部、１３・・・ＡＱ
パッド部。
（Ｇ）
第１図
Ｃ６）
第５図
（Ｃ）FIG. 1 is a sectional view of one embodiment of the semiconductor device of the present invention, and FIG.
The figure is an explanatory diagram of the method for manufacturing a semiconductor device according to the present invention, and FIG. 3 is a sectional view of a conventional semiconductor device. Explanation of symbols 1...Semiconductor element, 2...Adhesive, 3...Mount part. 4... Bonding wire, 6... Transparent resin, 7...
Transparent member, 9... Lead portion, 10... Sealing resin, 1
1... Light receiving part, 12... Ball part, 13... AQ
Pad part. (G) Figure 1 C6) Figure 5 (C)
Claims (1)
線が取り付けられるパッド部が設けられている半導体素
子の表面に透光性の透明樹脂を介して透光部材の一面が
配置され、該透光部材の他の一面が露出した状態で樹脂
封止されている半導体装置において、該透明樹脂と溶剤
からなる溶液を噴霧状にして、該半導体素子上に塗布す
る工程を有することを特徴とする半導体製造方法。1. One side of a light-transmitting member is placed on the surface of a semiconductor element, which has a light-receiving part in the center and a pad part to which a bonding wire is attached to the outer periphery, with a light-transmitting transparent resin interposed therebetween. A semiconductor device that is resin-sealed with the other surface of a light-transmitting member exposed, comprising the step of atomizing a solution consisting of the transparent resin and a solvent and applying it onto the semiconductor element. semiconductor manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1194077A JPH0360136A (en) | 1989-07-28 | 1989-07-28 | Manufacture of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1194077A JPH0360136A (en) | 1989-07-28 | 1989-07-28 | Manufacture of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0360136A true JPH0360136A (en) | 1991-03-15 |
Family
ID=16318577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1194077A Pending JPH0360136A (en) | 1989-07-28 | 1989-07-28 | Manufacture of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0360136A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010093285A (en) * | 2003-02-28 | 2010-04-22 | Sanyo Electric Co Ltd | Method of manufacturing semiconductor device |
-
1989
- 1989-07-28 JP JP1194077A patent/JPH0360136A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010093285A (en) * | 2003-02-28 | 2010-04-22 | Sanyo Electric Co Ltd | Method of manufacturing semiconductor device |
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