JPH036013A - semiconductor manufacturing equipment - Google Patents
semiconductor manufacturing equipmentInfo
- Publication number
- JPH036013A JPH036013A JP1140600A JP14060089A JPH036013A JP H036013 A JPH036013 A JP H036013A JP 1140600 A JP1140600 A JP 1140600A JP 14060089 A JP14060089 A JP 14060089A JP H036013 A JPH036013 A JP H036013A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- duct
- carrier gas
- spray nozzle
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Special Spraying Apparatus (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体製造装置に関し、特に半導体基板の表面
に種々の塗布薬液を噴霧して均一な薬液膜を形成するの
に使用される半導体製造装置に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment, and particularly to semiconductor manufacturing equipment used to spray various coating chemicals onto the surface of a semiconductor substrate to form a uniform chemical film. Regarding equipment.
従来、この種の半導体製造装置は半導体基板上方に固定
されもしくは水平方向に可動な1個以上の噴霧ノズルを
有し、半導体基板は回転可能な基盤上に真空吸着される
構造となっていた。Conventionally, this type of semiconductor manufacturing equipment has had one or more spray nozzles fixed above the semiconductor substrate or movable in the horizontal direction, and the semiconductor substrate has been vacuum-adsorbed onto a rotatable base.
上述した従来の半導体製造装置は、半導体基板上方に噴
霧ノズルを有するため、噴霧点から塗布面までの距離が
、半導体基盤中央部と外周部で異なるため、塗布膜厚に
バラツキが生じるという欠点がある。The conventional semiconductor manufacturing equipment described above has a spray nozzle above the semiconductor substrate, so the distance from the spray point to the coating surface is different between the center and the outer periphery of the semiconductor substrate, resulting in variations in coating film thickness. be.
また、半導体基板を回転させる構造であるため塗布薬液
の半導体基板エッヂ部及び裏面への回り込みが生じ、後
工程での膜の剥れや膜のエツチング残りを誘発する原因
となっていた。In addition, since the semiconductor substrate is rotated, the coating liquid flows around the edges and back surface of the semiconductor substrate, causing peeling of the film and etching residue in subsequent steps.
本発明の半導体製造装置は、半導体基板を真空吸着する
基盤と、前記基盤に真空吸着された半導体基板のエッヂ
部を覆うマスクと、前記マスク上部に開孔部が位置する
ダクトと、前記ダクト内に塗布薬液を霧状にして導入す
る噴霧ノズルと、前記噴霧、ノズル後方からキャリアガ
スを供給する手段とを含むというものである。The semiconductor manufacturing apparatus of the present invention includes a base for vacuum-chucking a semiconductor substrate, a mask for covering an edge portion of the semiconductor substrate vacuum-chucking to the base, a duct in which an opening is located above the mask, and a duct in the duct. The device includes a spray nozzle that introduces a coating chemical solution in the form of a mist, and a means for supplying a carrier gas from behind the spray nozzle.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の第1の実施例を示す縦断面図である。FIG. 1 is a longitudinal sectional view showing a first embodiment of the present invention.
基盤5は半導体基板4を真空吸着し、半導体基板4の上
方には半導体基板のエツジ部を覆うマスク3が配置され
ている。ダクト2は内部に噴霧ノスル1を備え一端から
はキャリアガスを流し、他端は半導体基板4の」ユ方に
開口した構造となっている。The substrate 5 vacuum-chucks the semiconductor substrate 4, and a mask 3 is placed above the semiconductor substrate 4 to cover the edge portion of the semiconductor substrate. The duct 2 has a spray nozzle 1 therein, and has a structure in which a carrier gas flows from one end, and the other end is opened toward the semiconductor substrate 4.
これにより、噴霧ノズル1により霧状にされた塗布薬液
はダクト2内でキャリアカスと混じり合い、均一な混合
ガスとなって半導体基板表面へ吹きつけられる為、均一
な薬液膜が塗布できる。その際半導体基板のエッヂ部及
び裏面への塗布薬液の付着はマスク3により防止されて
いる。As a result, the coating chemical liquid atomized by the spray nozzle 1 mixes with the carrier scum in the duct 2, becomes a uniform gas mixture, and is sprayed onto the surface of the semiconductor substrate, so that a uniform chemical film can be applied. At this time, the mask 3 prevents the coating chemical from adhering to the edge portions and back surface of the semiconductor substrate.
第2図は本発明の第2の実施例を示す縦断面図である。FIG. 2 is a longitudinal sectional view showing a second embodiment of the invention.
この実施例ではダクト2の内部に多数の孔を設けた板又
はメツシュ状のじゃま板6−1.6−2.6−3が設置
されているなめ霧状になった塗布薬液とキャリアガスの
混じり合いが更に均一となり、半導体基板表面の薬液膜
厚の均一性が向上する利点を有する。In this embodiment, a plate with a large number of holes or a mesh-like baffle plate 6-1.6-2.6-3 is installed inside the duct 2, and a mist-like coating chemical solution and a carrier gas are connected to each other. This has the advantage that the mixture becomes more uniform and the uniformity of the chemical liquid film thickness on the surface of the semiconductor substrate is improved.
以上説明したように本発明は、半導体基板を真空吸着し
て基板に固定し、エッヂ部をマスクした状態で、キャリ
アガスと均一に混合した霧状塗布薬液を半導体基板表面
に吹きつけることにより、均一な厚さの薬液膜を塗布す
ることができる効果がある。さらに、半導体基板のエッ
ヂ部及び裏面への塗布薬液の付着を防止することができ
るなめ薬液膜の剥れやエツチング残りを皆無にすること
ができ、ゴミの発生を減少させる効果を有している。As explained above, the present invention fixes a semiconductor substrate to the substrate by vacuum suction, and sprays a mist coating solution uniformly mixed with a carrier gas onto the surface of the semiconductor substrate while masking the edges. This has the effect of being able to apply a chemical film of uniform thickness. Furthermore, it can prevent the coating chemical from adhering to the edges and back surface of the semiconductor substrate, and eliminates peeling of the chemical film and etching residue, which has the effect of reducing the generation of dust. .
第1図は本発明の第1の実施例を示すIN@面図、第2
図は第2の実施例を示す縦断面図である。
] ・噴霧ノスル、2・・・ダクト、3・・・マスク、
4半導体基板、5・・基盤、6−1’、6−2.63・
・じゃま板。FIG. 1 is an IN@ side view showing the first embodiment of the present invention, and FIG.
The figure is a longitudinal sectional view showing the second embodiment. ] ・Spray nostle, 2... duct, 3... mask,
4 semiconductor substrate, 5... base, 6-1', 6-2.63...
・Block board.
Claims (1)
された半導体基板のエッヂ部を覆うマスクと、前記マス
ク上部に開孔部が位置するダクトと、前記ダクト内に塗
布薬液を霧状にして導入する噴霧ノズルと、前記噴霧ノ
ズル後方からキャリアガスを供給する手段とを含むこと
を特徴とする半導体製造装置。A base for vacuum suctioning a semiconductor substrate, a mask covering an edge portion of the semiconductor substrate vacuum suctioned to the base, a duct having an opening located above the mask, and a spraying chemical solution in the duct. A semiconductor manufacturing apparatus comprising: a spray nozzle for introducing carrier gas; and means for supplying carrier gas from behind the spray nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1140600A JPH036013A (en) | 1989-06-02 | 1989-06-02 | semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1140600A JPH036013A (en) | 1989-06-02 | 1989-06-02 | semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH036013A true JPH036013A (en) | 1991-01-11 |
Family
ID=15272475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1140600A Pending JPH036013A (en) | 1989-06-02 | 1989-06-02 | semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH036013A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4991950B1 (en) * | 2011-04-13 | 2012-08-08 | シャープ株式会社 | Mist deposition system |
| KR101658958B1 (en) * | 2015-05-12 | 2016-09-23 | 한국기계연구원 | Hybrid lathe for a roll die |
-
1989
- 1989-06-02 JP JP1140600A patent/JPH036013A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4991950B1 (en) * | 2011-04-13 | 2012-08-08 | シャープ株式会社 | Mist deposition system |
| WO2012140792A1 (en) * | 2011-04-13 | 2012-10-18 | シャープ株式会社 | Film-forming apparatus and film-forming method |
| KR101658958B1 (en) * | 2015-05-12 | 2016-09-23 | 한국기계연구원 | Hybrid lathe for a roll die |
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