JPH0360452A - Dielectric ceramic composition - Google Patents

Dielectric ceramic composition

Info

Publication number
JPH0360452A
JPH0360452A JP1192238A JP19223889A JPH0360452A JP H0360452 A JPH0360452 A JP H0360452A JP 1192238 A JP1192238 A JP 1192238A JP 19223889 A JP19223889 A JP 19223889A JP H0360452 A JPH0360452 A JP H0360452A
Authority
JP
Japan
Prior art keywords
composition
dielectric constant
ceramic composition
present
dielectric ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1192238A
Other languages
Japanese (ja)
Other versions
JPH0582341B2 (en
Inventor
Masakazu Kobayashi
正和 小林
Takeshi Inoue
健 井上
Seiji Saito
斉藤 征士
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP1192238A priority Critical patent/JPH0360452A/en
Publication of JPH0360452A publication Critical patent/JPH0360452A/en
Publication of JPH0582341B2 publication Critical patent/JPH0582341B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は誘電体磁器組成物に係り、特に低温焼結が可能
で、焼結体中の粒成長を抑えると共に高誘電率かつ低損
失な誘電特性を有し、例えば小型大容量の積層コンデン
サ等の誘電体材料として好適な誘電体磁器組成物に関す
る。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a dielectric ceramic composition, which can be sintered at low temperatures, suppresses grain growth in the sintered body, and has a high dielectric constant and low loss. The present invention relates to a dielectric ceramic composition that has dielectric properties and is suitable as a dielectric material for, for example, small-sized, large-capacity multilayer capacitors.

[従来の技術] 従来、高誘電率磁器組成物としては、チタン酸バリウム
(BaTiOa)を主体とする組成物が−Mに使用され
ている。即ち、BaTiO3を基体とし、これにキュリ
ー点を室温付近に移動させるシフター剤と容量温度特性
を改善するデプレッサ剤、さらに焼結促進剤、還元防止
剤などを加えた組成とするのが一般的である。
[Prior Art] Conventionally, as a high dielectric constant ceramic composition, a composition mainly containing barium titanate (BaTiOa) has been used for -M. That is, the composition is generally made of BaTiO3 as a base, to which are added a shifter agent that moves the Curie point to around room temperature, a depressor agent that improves the capacitance-temperature characteristics, and a sintering accelerator, reduction inhibitor, etc. be.

シフター剤としては、BaSnO3,BaZrO3,C
aZrO3,CaSnO3SrTiO3,PbTiO3
,La2O3゜CeO2などが用いられ、デブレッサ剤
としては、CaTiO3,MgTi0z 、B12(S
nO3)s、Bi2 (TiO3)3NiSnOs、M
gZrO3,Mg5nOsなどが用いられている。また
焼結促進剤としては、AJ220a 、S io2.Z
nO,CeO2゜B203 、Nb205 、WO2な
どが用いられ、還元防止剤としては、MnO2,Fe2
03゜CuOなどが用いられている。
As a shifter agent, BaSnO3, BaZrO3, C
aZrO3, CaSnO3SrTiO3, PbTiO3
, La2O3°CeO2, etc. are used, and depressor agents include CaTiO3, MgTiOz, B12(S
nO3)s, Bi2 (TiO3)3NiSnOs, M
gZrO3, Mg5nOs, etc. are used. Further, as the sintering accelerator, AJ220a, S io2. Z
nO, CeO2゜B203, Nb205, WO2, etc. are used, and as reduction inhibitors, MnO2, Fe2
03°CuO etc. are used.

[発明が解決しようとする課題] しかしながら、BaTiOsを主体とする組成物は焼結
温度が1300〜1400℃の高温であるため、焼成コ
ストが高く、特にこれを積層コンデンサとして利用する
場合には内部電極として、パラジウム、白金などの高価
な貴金属を用いなければならず、積層コンデンサのコス
ト低減の犬き1(問題点になっていた。
[Problems to be Solved by the Invention] However, since the sintering temperature of a composition mainly composed of BaTiOs is as high as 1,300 to 1,400°C, the firing cost is high, and especially when it is used as a multilayer capacitor, the internal Expensive precious metals such as palladium and platinum had to be used as electrodes, which was a problem in reducing the cost of multilayer capacitors.

しかも、BaTfOaを主体とする組成物の誘電率は最
高でも1.0000種度であるため、小型大容量の積層
コンデンサを得るには暦数を多くしなければ12らず、
やはり、製造コスト低減の大き1(障害となっていた。
Moreover, the dielectric constant of a composition mainly composed of BaTfOa is 1.0000 degrees at most, so in order to obtain a small-sized, large-capacity multilayer capacitor, a large number of circuits must be used.
As expected, this was the major obstacle to reducing manufacturing costs.

このようなことから、内部電極として安価なAgを主成
分とする電極を使用することができ、しかも、層数を少
なく抑えて積層コンデンサの製造コストを低減し得る、
低温焼結が可能な高誘電率誘電体材料の出現が要望され
ている。
For this reason, it is possible to use an inexpensive electrode containing Ag as the main component as the internal electrode, and also to reduce the manufacturing cost of the multilayer capacitor by keeping the number of layers small.
There is a demand for the emergence of high permittivity dielectric materials that can be sintered at low temperatures.

追手、主体そのものが低温焼結可能な鉛系複合ペロブス
カイト型化合物を用いた組成物が数多く提案されている
。特に、P b (F e l/2 N b l/2)
03及びP b (F e2y3W!/3)03を含む
組成物は低温焼結が可能でかつ高誘電率を有しており、
この2成分系を中心として様々な組成物が提案されてい
る(例えば、M、 Yonezawa: Cerami
cBulletin [i2 (1983) 1375
)。しかし、このようなpbやWを含む組成物を用いた
場合、焼結体中の結晶粒径が大きくなっていまい薄層化
に向かないという欠点がある。一方、結晶粒成長を即え
られるような低温で焼成した場合、優れた電気特性を得
られない等の不都合が生じる。
Many compositions have been proposed in which the lead-based composite perovskite type compound can be sintered at low temperatures. In particular, P b (F e l/2 N b l/2)
A composition containing 03 and P b (F e2y3W!/3)03 can be sintered at a low temperature and has a high dielectric constant,
Various compositions have been proposed centering on this two-component system (for example, M. Yonezawa: Cerami
cBulletin [i2 (1983) 1375
). However, when such a composition containing PB or W is used, the crystal grain size in the sintered body becomes large, making it unsuitable for thinning the layer. On the other hand, if the material is fired at a low temperature that can speed up crystal grain growth, there will be problems such as not being able to obtain excellent electrical properties.

このため、低温焼結が可能で、かつ焼結体中の粒成長を
抑えながら優れた電気特性を示す高誘電率誘導体材料の
出現が要望されている。
Therefore, there is a demand for a high dielectric constant dielectric material that can be sintered at low temperatures and exhibits excellent electrical properties while suppressing grain growth in the sintered body.

本発明は上記従来の実情に鑑みてなされたものであって
、低温焼結が可能で、また、焼結体中の粒成長を抑える
ことが可能で、その上、誘電率が高く、しかも誘電損失
(tanδ)が小さく、小型大容量の積層コンデンサ等
を低コストで製造することを可能とする誘電体磁器組成
物を提供することを目的とする。
The present invention was made in view of the above-mentioned conventional circumstances, and it is possible to perform low-temperature sintering, suppress grain growth in the sintered body, and have a high dielectric constant. It is an object of the present invention to provide a dielectric ceramic composition that has a small loss (tan δ) and allows manufacturing of small-sized, large-capacity multilayer capacitors, etc. at low cost.

[課題を解決するための手段及び作用J本発明の誘電体
磁器組成物は、Pb(FetzzNb+7z )03 
、Pb (Zn+z3Nb273 )03及びP b 
(M+/2 Wl/2 ) 03 (D3成分を主成分
として含む組成物において、pb原子の一部をCa、B
a及びS「よりなる群から選ばれる少なくとも1種の原
子でM換したものであって、−数式(I) (P b+−a Ra )  [(F er/2N b
uzz ) 1−b−c(Z n l/3 N b 2
/3 ) b(M+/2 Wl/2 ) c ] 03
・・・(I) (RはCa、Ba及びSrよりなる群から選ばれる少な
くとも1種、MはZn、Mg及びNiよりなる群から選
ばれる少なくとも1種) で表わした場合、 0.00<ago、10 0.00<b+c<0.50 となる組成よりなる仮焼物で表わされるように、PbO
及びNbzOsを、それぞれ重量%で0.00<PbO
<1.5 0.00<Nbz Os <1.0 添加した組成を有することを特徴とする特本発明者らは
、先に1000℃程度の温度で焼結可能な高誘電率誘導
体磁器組成物として、前記−数式(1)で示される組成
を有する組成物を提案した(特願平1−74573号)
。本発明の誘電体6R器組成物は、この組成系よりなる
仮焼物に副成分として更にPbO及びNb2 o、の所
定量を添加含有せしめたものであって、これにより、9
50℃付近の温度で焼結が可能となり、かつ焼結体中の
粒成長を抑えながら優れた電気特性を示す高誘電率誘導
体IIf1器組成物を提供するものである。
[Means and Effects for Solving the Problems J The dielectric ceramic composition of the present invention has Pb(FetzzNb+7z)03
, Pb (Zn+z3Nb273)03 and Pb
(M+/2 Wl/2) 03 (In a composition containing the D3 component as a main component, some of the pb atoms are replaced by Ca, B
a and S "M-substituted with at least one atom selected from the group consisting of - formula (I) (P b + - a Ra ) [(F er/2N b
uzz ) 1-b-c(Z n l/3 N b 2
/3) b(M+/2 Wl/2) c] 03
...(I) (R is at least one selected from the group consisting of Ca, Ba and Sr, M is at least one selected from the group consisting of Zn, Mg and Ni) When expressed as: 0.00< ago, 10 0.00<b+c<0.50 As shown by the calcined product,
and NbzOs, respectively in weight% 0.00<PbO
<1.5 0.00<Nbz Os <1.0 The present inventors have previously developed a high dielectric constant dielectric ceramic composition that can be sintered at a temperature of about 1000°C. proposed a composition having the composition represented by the above-mentioned formula (1) (Japanese Patent Application No. 1-74573).
. The dielectric 6R composition of the present invention is obtained by adding predetermined amounts of PbO and Nb2O as subcomponents to the calcined product made of this composition system, thereby achieving a
The object of the present invention is to provide a high dielectric constant dielectric IIf1 composition that can be sintered at a temperature around 50°C and exhibits excellent electrical properties while suppressing grain growth in the sintered body.

以下、本発明の詳細な説明する。The present invention will be explained in detail below.

まず、本発明の誘電体磁器組成物の組成域の限定理由に
ついて説明する。
First, the reason for limiting the composition range of the dielectric ceramic composition of the present invention will be explained.

前記(1)式中、aが0.00であると誘電率の温度変
化が急激になり、aが0.10以上であると誘電率のピ
ークが著しく低温側に移行するため誘電率が小さくなる
。このため、aの値の範囲は0.00<a<0.10と
する。
In the above formula (1), if a is 0.00, the temperature change in the dielectric constant will be rapid, and if a is 0.10 or more, the peak of the dielectric constant will shift significantly to the low temperature side, resulting in a small dielectric constant. Become. Therefore, the range of the value of a is 0.00<a<0.10.

また、前記(1)式中、b≧0.50を満たす領域にお
いては、通常の固相反応ではペロブスカイト構造になら
ないP b (Z nl/3N b27s )03が主
組成となり、誘電率が低下する。また、C20,50を
満たす領域においては、反強誘電体であるPb (M+
/2 Wl/2 ) 03  (但し、Mは前記の通り
)が主組成となり、誘電率が低下する。更に、b+c≧
0.50かつboo、50、c<0.5を満たす領域に
おいては、前述の二つの要因が共存するため、やはり誘
電率が低下する。このため、b+c<0.50でなけれ
ばならない。また、b+c=oのときは、pb(F e
 l/2 N b l/2 ) 03のpbをR(Rは
前記の通り)で置換した組成となり、良好な電気特性が
得られない。このため、0.00<b+cとする。
In addition, in the region where b≧0.50 is satisfied in the above formula (1), the main composition is P b (Z nl/3N b27s )03, which does not form a perovskite structure in a normal solid phase reaction, and the dielectric constant decreases. . In addition, in the region satisfying C20,50, Pb (M+
/2 Wl/2 ) 03 (where M is as described above) becomes the main composition, and the dielectric constant decreases. Furthermore, b+c≧
In the region satisfying 0.50 and boo, 50, c<0.5, the two factors described above coexist, so the dielectric constant also decreases. Therefore, b+c<0.50 must be satisfied. Moreover, when b+c=o, pb(F e
1/2 N b 1/2 ) 03 is substituted with R (R is as described above), and good electrical characteristics cannot be obtained. Therefore, 0.00<b+c.

本発明においては、特に o、oo<b≦0.20 0.0oze≦0,20 であることが好ましい。In the present invention, especially o, oo<b≦0.20 0.0oz≦0,20 It is preferable that

上記のごとく限定された組成よりなる仮焼物で表わされ
るように、NbzOaのみを添加した場合、その添加量
に従って焼結体中の粒成長が著しく抑制されるが、反面
、焼結が悪くなり、誘電率及び絶縁抵抗が低下する。こ
れで表わされるように、PbOとNb2O5を同時に添
加した場合には、粒成長が抑制され、かつ低温焼結が可
能となり、誘電率及び絶縁抵抗の低下も起こすことがな
い。このことから、PbO及びNb、O,が同時に添加
されることが必要とされる。しかし、PbO及びNbz
Osの添加量が多過ぎると、焼結が不安定になったり、
電気特性の劣化、信頼性や強度の低下を招くなど好まし
くない。従って、PbO及びNb2O5の添加量は、前
記−数式(I)で表わされる組成よりなる仮焼物で表わ
されるように、それぞれ重量%で0.00<PbO<1
.5 0.00<Nt)z Os <1.0 とする。
As shown in the calcined product having a limited composition as described above, when only NbzOa is added, grain growth in the sintered body is significantly suppressed depending on the amount added, but on the other hand, sintering becomes worse. Dielectric constant and insulation resistance decrease. As shown, when PbO and Nb2O5 are added at the same time, grain growth is suppressed, low-temperature sintering is possible, and the dielectric constant and insulation resistance do not decrease. From this, it is necessary to add PbO, Nb, and O at the same time. However, PbO and Nbz
If the amount of Os added is too large, sintering may become unstable,
This is undesirable because it causes deterioration of electrical characteristics and a decrease in reliability and strength. Therefore, the amounts of PbO and Nb2O5 added are 0.00<PbO<1 by weight, respectively, as represented by the calcined product having the composition represented by formula (I) above.
.. 5 0.00<Nt)zOs<1.0.

このような本発明の誘電体磁器組成物を製造するには、
例えば、−酸化鉛、炭酸カルシウム、炭酸バリウム、炭
酸ストロンチウム、酸化第二鉄、五酸化ニオブ、酸化亜
鉛、酸化マグネシウム、炭酸ニッケル、三酸化タングス
テン等の粉末を所定の割合となるよう秤量し、湿式ボー
ルミル等を用いて十分に混合する。次にこの混合物を乾
燥した後、必要に応じ、600〜800℃の範囲で数時
間程度仮焼する。得られた仮焼物に、所定量のPbO及
びNbzOsを添加し、湿式ボールミル等で粉砕する。
To produce such a dielectric ceramic composition of the present invention,
For example, - powders of lead oxide, calcium carbonate, barium carbonate, strontium carbonate, ferric oxide, niobium pentoxide, zinc oxide, magnesium oxide, nickel carbonate, tungsten trioxide, etc. are weighed in a predetermined proportion and wet-processed. Mix thoroughly using a ball mill or the like. Next, after drying this mixture, if necessary, it is calcined at a temperature in the range of 600 to 800°C for several hours. Predetermined amounts of PbO and NbzOs are added to the obtained calcined product, and the mixture is pulverized using a wet ball mill or the like.

粉砕により得られた仮焼粉を乾燥後、ポリビニルアルコ
ールなどの適当な有機バインダを加えて、顆粒を作り、
これを所定の形状にプレス成形した後、焼成を行なう。
After drying the calcined powder obtained by pulverization, a suitable organic binder such as polyvinyl alcohol is added to make granules.
After press-molding this into a predetermined shape, firing is performed.

この焼成は、750〜1000℃の温度範囲で0.5〜
数時間程度行なう。(勿論、これらの製造条件は最も好
適な数値であって、本発明の磁器組成物は上記以外の条
件もしくは方法によって製造されても良い。) [実施例] 以下に本発明を実施例を挙げて更に具体的に説明するが
、本発明はその要旨を超えない限り、以下の実施例に限
定されるものではない。
This firing is carried out at a temperature range of 750 to 1000°C.
Do this for about a few hours. (Of course, these manufacturing conditions are the most suitable values, and the porcelain composition of the present invention may be manufactured under conditions or methods other than those described above.) [Examples] The present invention will be described below with examples. The present invention will be described in more detail below, but the present invention is not limited to the following examples unless it exceeds the gist thereof.

実施例1 出発原料としてPbO,CaCO3,Fe2O3、Nb
20s 、ZnO及びwagを使用し、これらを前記−
数式(I)において、aヨb=c=0.05.R=Ca
、M=Znの配合比となるように秤量し、ボールミル中
で純水と共に約20時間溝式混合した。次いで混合物を
乾燥後、700〜750℃で2時間保持して仮焼した。
Example 1 PbO, CaCO3, Fe2O3, Nb as starting materials
20s, ZnO and wag, and these were
In formula (I), ayob=c=0.05. R=Ca
, M=Zn, and mixed in a ball mill with pure water in a groove for about 20 hours. Next, the mixture was dried and calcined by holding at 700 to 750°C for 2 hours.

この仮焼物に第1表の配合比になるようにPbO及びN
b2O,を添加しくただし、No、1〜4ではNb2O
,のみを添加)、再びボールミル中で純水と共に約20
時間溝式粉砕した後、乾燥した。
Add PbO and N to this calcined product in the mixing ratio shown in Table 1.
However, in No. 1 to 4, Nb2O is added.
, only added), and again in a ball mill with pure water for about 20 min.
After time slot pulverization, it was dried.

得られた粉末にポリビニルアルコール水溶液(有機バイ
ンダ)を加え、底形圧力約2t o n / c tn
’で、直径的15mm、厚さ約0. 7mmの円板に加
圧成形した。この成形物を約600℃で1時間保持して
バインダを除いた後、マグネシア磁器容器に入れて、第
1表に示す温度で3〜18時間焼成した。
A polyvinyl alcohol aqueous solution (organic binder) was added to the obtained powder, and the bottom pressure was about 2 tons/c tn.
', diameter 15mm, thickness approximately 0. It was pressure molded into a 7 mm disc. The molded product was held at about 600° C. for 1 hour to remove the binder, then placed in a magnesia porcelain container and fired at the temperatures shown in Table 1 for 3 to 18 hours.

得られた焼結体の両面に、銀電極を650〜700℃で
焼付けて平行平板コンデンサとし、その電気特性を調べ
た。
Silver electrodes were baked on both sides of the obtained sintered body at 650 to 700°C to form a parallel plate capacitor, and its electrical properties were investigated.

結果を第1表に示す。The results are shown in Table 1.

なお、誘電率及び誘電損失はYHPデジタルLCRメー
タモデル4274Aを用い、測定周波数lKH2,測定
電圧1.OVrms、温度25℃にて測定した。また、
絶縁抵抗はYHPアナログIRメータ4329Aを使用
し、温度25℃で印加電圧100vにて、1分後の値を
測定した。また、単板状試料断面を研磨後、適゛当なエ
ッチャントを用いて化学的にエツチングし、その断面を
光学顕微鏡で観察することにより焼結体中の結晶粒の平
均粒径な求めた。
Note that the dielectric constant and dielectric loss were measured using YHP digital LCR meter model 4274A, with measurement frequency lKH2 and measurement voltage 1. OVrms was measured at a temperature of 25°C. Also,
The insulation resistance was measured using a YHP analog IR meter 4329A at a temperature of 25° C. and an applied voltage of 100 V after 1 minute. In addition, after polishing the cross section of the single-plate sample, it was chemically etched using an appropriate etchant, and the average grain size of the crystal grains in the sintered body was determined by observing the cross section with an optical microscope.

第1表からも明らかなように、本発明の範囲内の組成物
は、いずれも誘電率が高く、誘電損失が低く、しかも、
容量抵抗積も比較的大きいという優れた電気特性を示し
、その上、焼結温度が低く、焼結体中の結晶粒径が小さ
いという利点も有している。
As is clear from Table 1, all of the compositions within the scope of the present invention have a high dielectric constant, a low dielectric loss, and
It exhibits excellent electrical properties with a relatively large capacitance-resistance product, and also has the advantage of a low sintering temperature and a small crystal grain size in the sintered body.

[発明の効果] 以上詳述した通り、本発明の誘電体磁器組成物は、高誘
電率かつ低損失であり、容量抵抗積も比較的大きい、ま
た、本発明の誘電体磁器組成物は焼結体中の結晶粒径が
小さい。このため、本発明の誘電体磁気組成物を用いる
ことにより、信頼性の高い小型大容量のコンデンサを得
ることができる。
[Effects of the Invention] As detailed above, the dielectric ceramic composition of the present invention has a high dielectric constant and low loss, and has a relatively large capacitance-resistance product. The crystal grain size in the aggregate is small. Therefore, by using the dielectric magnetic composition of the present invention, a highly reliable small-sized, large-capacity capacitor can be obtained.

1ノかも、本発明の誘電体磁器組成物は、焼結温度が低
いため、焼成コストが安価で、積層コンデンサに用いた
場合、内部電極に高価なパラジウムや白金などの貴金属
を使用することなく、比較的安価な銀糸等の金属を使用
することができる。このため、積層コンデンサの製造コ
ストを低下させ、 その価格を大幅に低減することができる。
One possibility is that the dielectric ceramic composition of the present invention has a low sintering temperature, so the firing cost is low, and when used in a multilayer capacitor, there is no need to use expensive noble metals such as palladium or platinum for the internal electrodes. , relatively inexpensive metals such as silver thread can be used. Therefore, the manufacturing cost of multilayer capacitors can be reduced, and their prices can be significantly reduced.

Claims (1)

【特許請求の範囲】[Claims] (1)Pb(Fe_1_/_2Nb_1_/_2)O_
3,Pb(Zn_1_/_3Nb_2_/_3)O_3
及びPb(M_1_/_2W_1_/_2)O_3を主
成分として含み、下記一般式( I ) (Pb_1_−_aR_a)[(Fe_1_/_2Nb
_1_/_2)_1_−_b_−_c(Zn_1_/_
3Nb_2_/_3)_b(M_1_/_2W_1_/
_2)_c]O_3…( I ) [式中、RはCa,Ba及びSrよりな る群から選ばれる少なくとも1種 MはZn,Mg及びNiよりなる群か ら選ばれる少なくとも1種 a,b及びcは 0.00<a<0.10 0.00<b+c<0.50 を満たす正数] で表わされるように、Pb原子のうちの一部を、Ca,
Ba及びSrよりなる群から選ばれる少なくとも1種の
原子で置換した組成よりなる仮焼物に対して、PbO及
びNb_2O_5を、それぞれ重量%で 0.00<PbO<1.5 0.00<Nb_2O_5<1.0 添加した組成を有することを特徴とする誘電体磁器組成
物。
(1) Pb(Fe_1_/_2Nb_1_/_2)O_
3, Pb(Zn_1_/_3Nb_2_/_3)O_3
and Pb(M_1_/_2W_1_/_2)O_3 as main components, and has the following general formula (I) (Pb_1_-_aR_a)[(Fe_1_/_2Nb
_1_/_2)_1_-_b_-_c(Zn_1_/_
3Nb_2_/_3)_b(M_1_/_2W_1_/
_2)_c]O_3...(I) [wherein, R is at least one kind selected from the group consisting of Ca, Ba and Sr; M is at least one kind selected from the group consisting of Zn, Mg and Ni a, b and c is a positive number that satisfies 0.00<a<0.10 0.00<b+c<0.50], some of the Pb atoms are replaced by Ca,
For a calcined material having a composition substituted with at least one type of atom selected from the group consisting of Ba and Sr, PbO and Nb_2O_5 were added in weight% of 0.00<PbO<1.5 0.00<Nb_2O_5< 1.0 A dielectric ceramic composition characterized by having an additive composition.
JP1192238A 1989-07-25 1989-07-25 Dielectric ceramic composition Granted JPH0360452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1192238A JPH0360452A (en) 1989-07-25 1989-07-25 Dielectric ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1192238A JPH0360452A (en) 1989-07-25 1989-07-25 Dielectric ceramic composition

Publications (2)

Publication Number Publication Date
JPH0360452A true JPH0360452A (en) 1991-03-15
JPH0582341B2 JPH0582341B2 (en) 1993-11-18

Family

ID=16287954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1192238A Granted JPH0360452A (en) 1989-07-25 1989-07-25 Dielectric ceramic composition

Country Status (1)

Country Link
JP (1) JPH0360452A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101646531B1 (en) 2016-01-18 2016-08-08 회명산업 주식회사 Latent Curing Agent for Epoxy Resin, Method for Preparing the Same, One Pack Type Epoxy Resin Composition Comprising Above Latent Curing Agent

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101646531B1 (en) 2016-01-18 2016-08-08 회명산업 주식회사 Latent Curing Agent for Epoxy Resin, Method for Preparing the Same, One Pack Type Epoxy Resin Composition Comprising Above Latent Curing Agent

Also Published As

Publication number Publication date
JPH0582341B2 (en) 1993-11-18

Similar Documents

Publication Publication Date Title
JPH09205036A (en) Multilayer capacitor with modified barium strontium titanate dielectric
JPS62138360A (en) Dielectric ceramic composition
JPH0354165A (en) PTC porcelain composition and its manufacturing method
JPS597665B2 (en) High dielectric constant porcelain composition
JP7723573B2 (en) Dielectric composition and electronic component
JPH01100051A (en) Dielectric porcelain composition
JP7534970B2 (en) Dielectric composition and electronic component
JPH058524B2 (en)
JPS6128621B2 (en)
JPS5910951B2 (en) Raw material composition for manufacturing high dielectric constant porcelain
JPS59152265A (en) High permittivity ceramic composition
JPH0637322B2 (en) Dielectric porcelain composition
JPH0582341B2 (en)
KR100268702B1 (en) compound of dielectric ceramic
JPH02279561A (en) Dielectric porcelain composition
JPS6128620B2 (en)
JPS6216481B2 (en)
KR940004381B1 (en) Dielectric Ceramic Composition for Multilayer Capacitor
JPS63162571A (en) High permittivity ceramic composition
JPS61203506A (en) High dielectric ceramic composition
JPH02167850A (en) High dielectric constant porcelain composition
JPH06139819A (en) Dielectric porcelain composition
JPS6211443B2 (en)
JPH08259324A (en) Dielectric porcelain composition
JPH05279106A (en) Dielectric porcelain composition