JPH0360497A - Production of superconducting pseudo single crystal - Google Patents
Production of superconducting pseudo single crystalInfo
- Publication number
- JPH0360497A JPH0360497A JP1193346A JP19334689A JPH0360497A JP H0360497 A JPH0360497 A JP H0360497A JP 1193346 A JP1193346 A JP 1193346A JP 19334689 A JP19334689 A JP 19334689A JP H0360497 A JPH0360497 A JP H0360497A
- Authority
- JP
- Japan
- Prior art keywords
- axis
- current
- single crystal
- crystal
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000002887 superconductor Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 abstract 1
- 230000007704 transition Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Conductive Materials (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分身)
本発明は、電流密度を上げることができる超伝導擬単結
晶の製造法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application) The present invention relates to a method for producing superconducting pseudo-single crystals that can increase current density.
(従来の技術)
従来、焼結超伝導複合酸化物の製造法は、成分元素の酸
化物あるいは炭酸塩等の粉末を所定量秤量したのちよく
混合し、成形して数100’Cで予備焼成したものを再
び粉砕し、成形して約900〜1100℃で本焼成して
製造している。(Prior art) Conventionally, the method for manufacturing sintered superconducting composite oxides involves weighing a predetermined amount of powder of component element oxides or carbonates, mixing them thoroughly, shaping them, and pre-sintering them at several 100'C. It is manufactured by pulverizing it again, molding it, and firing it at about 900 to 1100°C.
このようにして得られた超伝導焼結体は多結晶であり、
結晶構造が斜方晶の場合はa軸、b軸、C軸の格子定数
(,4)a、b、cで表わされるカーこれらの軸はばら
ばらの方向に向いており、一定方向に配向していない。The superconducting sintered body obtained in this way is polycrystalline,
When the crystal structure is orthorhombic, the lattice constants of the a, b, and c axes are (,4). Not yet.
また、これらの軸方向の電気伝導度δはa@が最も大き
く、b軸はa軸につやや小さく、C軸はa軸に比較し極
端に小さく1/1000程度であり、次式で表わすこと
ができる。In addition, the electric conductivity δ in these axial directions is the largest for a@, the b-axis is slightly smaller than the a-axis, and the C-axis is extremely small compared to the a-axis, about 1/1000, and is expressed by the following formula. be able to.
δa〉δb>>δC
現在、多結晶焼結体の臨界電流Jcは10+A/cm2
(77K)程度が得られているが、実用的には無磁
界で10 A/cm2 、IOTの磁界下で10
A/cm2位が要望されている。δa>δb>>δC Currently, the critical current Jc of the polycrystalline sintered body is 10+A/cm2
(77K), but in practical terms it is 10 A/cm2 without a magnetic field and 10 A/cm2 under an IOT magnetic field.
A/cm of 2nd place is requested.
多結晶焼結体の臨界電流JCが低い理由は、焼結密度が
十分に高くないために多結晶粒子同志の接触が不十分で
あること、多結晶粒子の粒界部が高電流密度に対してネ
ックになること、結晶の異方性が大きいために磁界や電
流の方向に不利な方位を有する粒子の超伝導性が早く破
れること等である。The reason why the critical current JC of the polycrystalline sintered body is low is that the sintered density is not high enough, so there is insufficient contact between the polycrystalline grains, and the grain boundaries of the polycrystalline grains are not strong enough to withstand high current density. The problem is that the superconductivity of particles that are oriented unfavorably to the direction of the magnetic field or current due to the large anisotropy of the crystal breaks down quickly.
多結晶焼結体の臨界電流JCに関してはキャリア密度が
小さいこと、コヒーレンス長が短いこと等により一部で
は頭打ちが憂慮されている状態である。Regarding the critical current JC of polycrystalline sintered bodies, there is a concern that the critical current JC may reach a ceiling in some areas due to the low carrier density, short coherence length, etc.
しかし、他方、臨界電流Jcは配向した多結晶薄膜で1
0 A/crn2、単結晶薄膜r10’、A、70m
2が得られていることも事実である。However, on the other hand, the critical current Jc is 1 in an oriented polycrystalline thin film.
0 A/crn2, single crystal thin film r10', A, 70m
It is also true that 2 has been obtained.
(解決しようとする問題点)
本発明は、多結晶超伝導体の臨界電流JCを高め実用に
供しうる超伝導結晶を製造する方法を提供しようとする
ものである。(Problems to be Solved) The present invention seeks to provide a method for manufacturing a superconducting crystal which can increase the critical current JC of a polycrystalline superconductor and which can be put to practical use.
(問題を解決するための手段)
本発明は、多結晶超伝導体を単結晶に極めて近い状態(
超伝導擬革結晶)にすることによって臨界電流JCを向
上させようとず゛るものである。(Means for solving the problem) The present invention provides a polycrystalline superconductor in a state extremely close to that of a single crystal (
The aim is to improve the critical current JC by making it a superconducting pseudocrystal.
これは斜方晶型の多結晶超伝導体の場合、a@b@、C
軸を一定方向に揃え配向させることによって目的を達成
することができる。In the case of an orthorhombic polycrystalline superconductor, a@b@, C
The objective can be achieved by aligning and orienting the axes in a certain direction.
先ず第一段階としてC軸を揃える。The first step is to align the C-axis.
以下、方法を詳細に説明する。The method will be explained in detail below.
高周波コイルの中に多結晶超伝導体を置き、コイルに高
周波電流を流し450..600℃の相転移点以下の温
度(例えば、YBa系の超伝導体の相転移点は570℃
である)で多結晶超伝導体を加熱する。A polycrystalline superconductor is placed inside a high-frequency coil, and a high-frequency current is passed through the coil at 450. .. Temperatures below the phase transition point of 600°C (for example, the phase transition point of YBa-based superconductors is 570°C)
) to heat the polycrystalline superconductor.
この場合、変化する磁場の軸方向にC軸が平行である結
晶は渦電流が誘導され、結晶の温度が上がりやがてその
結晶は熱運動により消滅する。In this case, an eddy current is induced in a crystal whose C-axis is parallel to the axial direction of the changing magnetic field, and the crystal's temperature increases and the crystal eventually disappears due to thermal motion.
他方、変化する磁場の軸方向にC軸が垂直である結晶は
渦電流は誘導されず、結晶の温度も変化せず熱運動によ
り消滅した結晶を原料とし結晶成長する。On the other hand, in a crystal whose C-axis is perpendicular to the axial direction of the changing magnetic field, no eddy current is induced, the temperature of the crystal does not change, and the crystal grows using the crystal that has disappeared due to thermal motion as a raw material.
さらに、多結晶超伝導体またはコイルの少なくとも一方
を変化する磁場の方向と垂直な方向を軸に回転させる。Furthermore, at least one of the polycrystalline superconductor or the coil is rotated about a direction perpendicular to the direction of the changing magnetic field.
この回転は連続回転でなくてもよい。例えば、多結晶超
伝導体をコイル軸に垂直な定方向に回転すると回転軸と
C軸は一致する。This rotation does not have to be continuous. For example, when a polycrystalline superconductor is rotated in a fixed direction perpendicular to the coil axis, the rotation axis and the C axis coincide.
上記の方法によってC軸を一定方向に揃え配向させるこ
とができる。By the above method, the C-axes can be aligned and oriented in a certain direction.
次に第二段階としてa軸とb軸を揃える。Next, the second step is to align the a and b axes.
以下、方法を詳細に説明する。The method will be explained in detail below.
第一段階で揃えたC軸方向と垂直方向に電流を流し、4
50〜600’Cの相転移点以下の温度で多結晶超伝導
体を加熱する。A current is passed in the direction perpendicular to the C-axis direction aligned in the first step, and 4
The polycrystalline superconductor is heated to a temperature below the phase transition point of 50-600'C.
電流は直流、交流あるいは静電誘導でもよい。The current may be direct current, alternating current or electrostatically induced.
この場合、電流の流れに平行なa軸の結晶にはより多く
の電流が流れ、結晶の温度が上がりやがてその結晶は熱
運動により消滅する。In this case, more current flows through the crystal along the a-axis parallel to the current flow, and the temperature of the crystal increases and the crystal eventually disappears due to thermal motion.
他方、電流の流れに垂直なa軸の結晶には電流の流れが
少ないため結晶の温度はそれ程上らず、熱運動により消
滅した結晶を原料とし結晶成長する。On the other hand, since there is little current flow in the crystal along the a-axis perpendicular to the current flow, the temperature of the crystal does not rise that much, and the crystal grows using the crystal that has disappeared due to thermal motion as a raw material.
上記の方法によってa軸およびb軸を一定方向に揃え配
向させることができる。By the above method, the a-axis and the b-axis can be aligned and oriented in a certain direction.
本発明によってa軸、b軸、C軸を一定方向に配向させ
た多結晶超伝導体は単結晶に極めて近い鼓車結晶超伝導
体であり、このため臨界電流Jcを著しく向上させるこ
とができる。The polycrystalline superconductor in which the a-axis, b-axis, and c-axis are oriented in a certain direction according to the present invention is a drum-wheel crystal superconductor that is extremely close to a single crystal, and therefore the critical current Jc can be significantly improved. .
本発明者等は本発明によって臨界電流35000A/c
m2の超伝導焼結体を製造することができた。さらに注
意深い操作を行なうことによってさらに高い臨界電流を
得ることが十分に期待できるものである。The present inventors have achieved a critical current of 35000 A/c according to the present invention.
It was possible to produce a superconducting sintered body of m2. It is fully expected that even higher critical currents can be obtained by more careful operation.
(発明の効果)
本発明によれば、多結晶超伝導体を極めて単結晶に近い
擬革結晶とすることができるため著しく臨界電流を向上
させることができる特徴がある。(Effects of the Invention) According to the present invention, the polycrystalline superconductor can be made into a pseudocrystalline structure that is extremely close to a single crystal, so that the critical current can be significantly improved.
Claims (1)
晶のC軸を一定方向に配向させたのち、該多結晶超伝導
体にC軸と垂直方向に電流を流してa軸およびb軸を一
定方向に配向させることを特徴とする超伝導擬単結晶の
製造法。After aligning the C-axis of the orthorhombic crystal in a certain direction by generating an eddy current in the polycrystalline superconductor, a current is passed through the polycrystalline superconductor in a direction perpendicular to the C-axis to align the a- and b-axes. A method for producing a superconducting pseudo-single crystal characterized by orienting the crystals in a certain direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1193346A JPH0360497A (en) | 1989-07-26 | 1989-07-26 | Production of superconducting pseudo single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1193346A JPH0360497A (en) | 1989-07-26 | 1989-07-26 | Production of superconducting pseudo single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0360497A true JPH0360497A (en) | 1991-03-15 |
Family
ID=16306372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1193346A Pending JPH0360497A (en) | 1989-07-26 | 1989-07-26 | Production of superconducting pseudo single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0360497A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010006667A (en) * | 2008-06-30 | 2010-01-14 | National Institute For Materials Science | Oxide superconductive sintered body, and method for producing the same |
-
1989
- 1989-07-26 JP JP1193346A patent/JPH0360497A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010006667A (en) * | 2008-06-30 | 2010-01-14 | National Institute For Materials Science | Oxide superconductive sintered body, and method for producing the same |
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