JPH0361356U - - Google Patents
Info
- Publication number
- JPH0361356U JPH0361356U JP1989121900U JP12190089U JPH0361356U JP H0361356 U JPH0361356 U JP H0361356U JP 1989121900 U JP1989121900 U JP 1989121900U JP 12190089 U JP12190089 U JP 12190089U JP H0361356 U JPH0361356 U JP H0361356U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- photosensitive element
- photodetecting device
- strain
- applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5368—Shapes of wire connectors the bond wires having helical loops
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
第１図は本考案が適用された光検出装置の一例
を示す回路図である。第２図および第３図は第１
図の光検出装置により検出される光の電気変換効
率を示す図であつて、従来と比較して示す図であ
る。
１４……半導体基板、２０……ホトダイオード
、３２……制御装置、３８……配管、４０……調
圧弁、４２……空気ポンプ、４４……圧力センサ
。
FIG. 1 is a circuit diagram showing an example of a photodetecting device to which the present invention is applied. Figures 2 and 3 are
It is a figure which shows the electric conversion efficiency of the light detected by the photodetection device of a figure, and is a figure which shows it in comparison with the conventional art. 14... Semiconductor substrate, 20... Photodiode, 32... Control device, 38... Piping, 40... Pressure regulating valve, 42... Air pump, 44... Pressure sensor.
Claims (1)
された光を電気信号に変換して出力する半導体材
料製の感光素子とを備えた光検出装置において、 前記半導体基板の前記感光素子が形成されてい
る部分に歪を付与する歪付与手段を設けたことを
特徴とする光検出装置。[Claims for Utility Model Registration] A photodetecting device comprising a semiconductor substrate and a photosensitive element formed on the semiconductor substrate and made of a semiconductor material that converts irradiated light into an electrical signal and outputs it, comprising: the semiconductor substrate; A photodetecting device characterized in that a strain applying means is provided for applying strain to a portion where the photosensitive element is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989121900U JPH0713237Y2 (en) | 1989-10-18 | 1989-10-18 | Photo detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989121900U JPH0713237Y2 (en) | 1989-10-18 | 1989-10-18 | Photo detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0361356U true JPH0361356U (en) | 1991-06-17 |
| JPH0713237Y2 JPH0713237Y2 (en) | 1995-03-29 |
Family
ID=31669922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989121900U Expired - Fee Related JPH0713237Y2 (en) | 1989-10-18 | 1989-10-18 | Photo detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0713237Y2 (en) |
-
1989
- 1989-10-18 JP JP1989121900U patent/JPH0713237Y2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0713237Y2 (en) | 1995-03-29 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |