JPH0361364U - - Google Patents

Info

Publication number
JPH0361364U
JPH0361364U JP12274289U JP12274289U JPH0361364U JP H0361364 U JPH0361364 U JP H0361364U JP 12274289 U JP12274289 U JP 12274289U JP 12274289 U JP12274289 U JP 12274289U JP H0361364 U JPH0361364 U JP H0361364U
Authority
JP
Japan
Prior art keywords
main surface
electrodes
parallel
semiconductor laser
individual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12274289U
Other languages
Japanese (ja)
Other versions
JP2528020Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989122742U priority Critical patent/JP2528020Y2/en
Publication of JPH0361364U publication Critical patent/JPH0361364U/ja
Application granted granted Critical
Publication of JP2528020Y2 publication Critical patent/JP2528020Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案装置の一実施例を示し、同図ａ
は、半導体レーザチツプの平面図、同図ｂはヒー
トシンクの平面図、同図ｃは半導体レーザチツプ
をヒートシンク上に載置したときの平面図である
。 Figure 1 shows an embodiment of the device of the present invention;
1 is a plan view of the semiconductor laser chip, FIG. 1B is a plan view of the heat sink, and FIG.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 互いに対向する一主面と他主面とを有し、該主
面間に並設された複数のレーザ共振器と、上記一
主面上に複数個並設され、上記複数のレーザ共振
器を夫々独立に駆動する個別駆動電極と、上記他
主面上に設けられた共通駆動電極と、を備えた半
導体レーザチツプが、上記個別駆動電極に対応す
る複数の個別引出電極を並設したヒートシンクの
一主面上に、上記複数の個別駆動電極と上記複数
の個別引出電極とを夫々対応接続して載置固着さ
れた半導体レーザ装置において、上記複数の個別
引出電極の並設方向における両最外電極の各最外
端辺間の長さは上記半導体レーザチツプのレーザ
共振器並設方向におけるチツプ幅よりもわずかに
大きいことを特徴とする半導体レーザ装置。 A plurality of laser resonators having one main surface and the other main surface facing each other and arranged in parallel between the main surfaces, and a plurality of laser resonators arranged in parallel on the one main surface and including the plurality of laser resonators A semiconductor laser chip including individual drive electrodes that are driven independently and a common drive electrode provided on the other main surface is connected to a heat sink in which a plurality of individual extraction electrodes corresponding to the individual drive electrodes are arranged in parallel. In a semiconductor laser device in which the plurality of individual drive electrodes and the plurality of individual extraction electrodes are mounted and fixed in correspondence with each other on the main surface, both outermost electrodes in the direction in which the plurality of individual extraction electrodes are arranged in parallel. A semiconductor laser device characterized in that the length between the outermost edges of is slightly larger than the chip width of the semiconductor laser chip in the direction in which the laser resonators are arranged side by side.
JP1989122742U 1989-10-19 1989-10-19 Semiconductor laser device Expired - Lifetime JP2528020Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989122742U JP2528020Y2 (en) 1989-10-19 1989-10-19 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989122742U JP2528020Y2 (en) 1989-10-19 1989-10-19 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPH0361364U true JPH0361364U (en) 1991-06-17
JP2528020Y2 JP2528020Y2 (en) 1997-03-05

Family

ID=31670735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989122742U Expired - Lifetime JP2528020Y2 (en) 1989-10-19 1989-10-19 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JP2528020Y2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01181490A (en) * 1988-01-11 1989-07-19 Canon Inc Semiconductor laser device
JPH01239895A (en) * 1988-03-18 1989-09-25 Sharp Corp Semiconductor laser device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01181490A (en) * 1988-01-11 1989-07-19 Canon Inc Semiconductor laser device
JPH01239895A (en) * 1988-03-18 1989-09-25 Sharp Corp Semiconductor laser device

Also Published As

Publication number Publication date
JP2528020Y2 (en) 1997-03-05

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term