JPH036136A - Optical transmitting and receiving circuit - Google Patents
Optical transmitting and receiving circuitInfo
- Publication number
- JPH036136A JPH036136A JP1139285A JP13928589A JPH036136A JP H036136 A JPH036136 A JP H036136A JP 1139285 A JP1139285 A JP 1139285A JP 13928589 A JP13928589 A JP 13928589A JP H036136 A JPH036136 A JP H036136A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- electrical
- frequency
- signal
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Optical Communication System (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の目的〕
(産業上の利用分野)
この発明は、アナログ映像信号等の周波数多重化信号を
半導体レーザにより光信号に変換して伝送する光送受信
回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an optical transceiver circuit that converts a frequency multiplexed signal such as an analog video signal into an optical signal using a semiconductor laser and transmits the optical signal.
(従来の技術)
従来、周波数多重化されたアナログ映像信号を半導体レ
ーザにより光伝送する装置としては、AM−FDM方式
とFM−FDM方式の2種類が提案されている。いずれ
の方式のものでも従来のアナログ映像信号光送受信回路
は、周波数帯域として数百MHz〜1.3GHzが用い
られている。(Prior Art) Conventionally, two types of devices have been proposed for optically transmitting frequency-multiplexed analog video signals using semiconductor lasers: an AM-FDM system and an FM-FDM system. Regardless of the type, the conventional analog video signal optical transmitter/receiver circuit uses a frequency band of several hundred MHz to 1.3 GHz.
例えば放送衛星の中間周波数はBS−IFインタフェー
スとして標準化されており、周波数帯域は1.0359
8〜1.33150GHzに選定されている。従来の光
送受信回路は第3図に示すように、入力端子1に印加さ
れる電気信号(前述のように高い周波数帯域のアナログ
映像信号)を半導体レーザによる電気/光変換送信部2
にそのまま入力し、得られた光信号を光ファイバ3によ
り光/電気変換受信部4に伝送し、出力端子5に光/電
気変換した信号を送出する構成であるため、光変調信号
は非常に高いIGHz帯となっていた。For example, the intermediate frequency of broadcasting satellites is standardized as the BS-IF interface, and the frequency band is 1.0359.
It is selected to be 8 to 1.33150 GHz. As shown in FIG. 3, a conventional optical transmitter/receiver circuit converts an electric signal (analog video signal in a high frequency band as described above) applied to an input terminal 1 into an electric/optical converter transmitter 2 using a semiconductor laser.
The optical modulation signal is input as is, the obtained optical signal is transmitted to the optical/electrical conversion receiver 4 via the optical fiber 3, and the optical/electrical converted signal is sent to the output terminal 5. Therefore, the optical modulation signal is extremely It was in the high IGHz band.
(発明が解決しようとする課題)
前述のように高周波数帯のまま電気/光変換して伝送す
る従来のものでは、光伝送系の特性が劣化し、それを改
善するための対策が非常に面倒になっていた。(Problem to be solved by the invention) As mentioned above, in the conventional system that converts electricity to light and transmits the high frequency band, the characteristics of the optical transmission system deteriorates, and there are very few measures to improve it. It was becoming a hassle.
つまり、半導体レーザの高調波歪Dn特性は変調周波数
を高くするほど、変調度を上げるほど劣化することが知
られている(測定例を第4図に示す)。また、光/電気
変換受信部の入力換算雑音電流密度1nTも周波数が高
いほど劣化する(測定例を第5図に示す)。In other words, it is known that the harmonic distortion Dn characteristic of a semiconductor laser deteriorates as the modulation frequency increases and the modulation degree increases (a measurement example is shown in FIG. 4). In addition, the input equivalent noise current density 1 nT of the optical/electrical conversion receiver also deteriorates as the frequency increases (a measurement example is shown in FIG. 5).
そのため半導体レーザのDn特性や相対雑音強度RIN
への要求条件が大変に厳しくなり、半導体レーザの選別
が必須である。また、モードホッピング雑音の発生を抑
止するため、ペルチェ素子を用いた自動温度制御回路A
TCを半導体レーザ駆動部に付加する必要があった。ま
た、半導体レーザへの反射戻り光の影響によるRIN特
性やDn特性の劣化を抑圧するために、斜め研摩コネク
タという特殊な光コネクタを使用していた。(1989
年電子情報通信学会春季全国大会B−787〜789、
「半導体レーザと応用技術」米津宏雄著、工学社刊)
また、光/電気変換受信部のInT特性の劣化を補うた
めに、高価で複雑な調整を必要とするアバランシェホト
ダイオードを受光素子として用いなければならなかった
。Therefore, the Dn characteristics of the semiconductor laser and the relative noise intensity RIN
The requirements for semiconductor lasers have become extremely strict, and selection of semiconductor lasers is essential. In addition, in order to suppress the generation of mode hopping noise, automatic temperature control circuit A using a Peltier element
It was necessary to add a TC to the semiconductor laser drive section. Further, in order to suppress deterioration of RIN characteristics and Dn characteristics due to the influence of light reflected back to the semiconductor laser, a special optical connector called a diagonal polished connector has been used. (1989
IEICE Spring National Conference B-787-789,
"Semiconductor Laser and Application Technology" by Hiroo Yonezu, published by Kogakusha) Furthermore, in order to compensate for the deterioration of the InT characteristics of the optical/electrical conversion receiver, an avalanche photodiode, which is expensive and requires complicated adjustment, must be used as a light receiving element. I had to.
以上の欠点はいずれもコストを引き上げる要因になると
ともに、量産性の阻害要因になる。All of the above drawbacks increase costs and impede mass production.
また、半導体レーザのRIN特性やDn特性を改善する
手法として、半導体レーザのモニタ光を検出してレーザ
駆動回路に負帰還する技術(光/電気変換負帰還回路)
が知られているが、この方法もあまり高い周波数帯には
適用できない。モニタ光検出用受光素子の容量や帰還ル
ープ内の位相回転が原因となり、高周波数帯では希望ど
うり動作しない、(W、ZSCHUNKE etal
’0ptical Fiber Transmis
sLon of Hlgh Definition
Te1evislon Signalsb y
Analog Intensity M。In addition, as a method to improve the RIN characteristics and Dn characteristics of semiconductor lasers, we have developed a technology that detects the monitor light of the semiconductor laser and provides negative feedback to the laser drive circuit (optical/electrical conversion negative feedback circuit).
is known, but this method cannot be applied to very high frequency bands either. Due to the capacitance of the photodetector for monitoring light detection and the phase rotation in the feedback loop, it does not work as desired in high frequency bands. (W, ZSCHUNKE etal
'0ptical Fiber Transmises
sLon of HLgh Definition
Te1evislon Signalsb y
Analog Intensity M.
dulation、theTransacttons
of the IECE of
Japan、vol、E68.No、3.1985)し
たがって、従来のように高周波数帯のまま電気/光変換
して伝送する回路には上記の負帰還回路を採用すること
ができなかった。duration, theTransactons
of the IECE of
Japan, vol, E68. (No. 3.1985) Therefore, the above-mentioned negative feedback circuit could not be employed in a conventional circuit that converts and transmits electricity to light in a high frequency band.
この発明は前述した従来の問題点に鑑みてなされたもの
で、その目的は、半導体レーザへの要求条件を大幅に緩
和し、特性の優れた光送受信回路を安価に量産できるよ
うにすることにある。This invention was made in view of the conventional problems mentioned above, and its purpose is to significantly relax the requirements for semiconductor lasers and to make it possible to mass-produce optical transmitter/receiver circuits with excellent characteristics at low cost. be.
(課題を解決するための手段)
そこでこの発明では、周波数多重された人力電気信号を
任意の低周波数帯に周波数変換した後、半導体レーザに
よる電気/光変換送信部で光信号に変換して伝送し、こ
の光信号を光/11気変換受信部で電気信号に変換した
後、任意の高周波数帯に周波数変換して出力する構成と
した。(Means for Solving the Problems) Accordingly, in this invention, after frequency-converting a frequency-multiplexed human-powered electric signal to an arbitrary low frequency band, it is converted into an optical signal by an electric/optical conversion transmission section using a semiconductor laser, and then transmitted. However, this optical signal is converted into an electrical signal by an optical/11-channel conversion receiver, and then the frequency is converted to an arbitrary high frequency band and output.
(作用)
低周波数帯に周波数変換された電気信号が前記電気/光
変換送信部に人力され、低周波数帯の信号で変調された
光信号が前記光/14気変換受信部に伝送される。(Operation) An electrical signal frequency-converted to a low frequency band is inputted to the electrical/optical conversion transmitter, and an optical signal modulated with the low frequency band signal is transmitted to the optical/14-channel converter receiver.
(実施例)
第1図は本発明の基本的な実施例を示している。周波数
多重化された高い周波数帯の電気信号が入力端子1に印
加される。この入力電気信号は第1の周波数変換部6で
低い周波数帯の電気信号に周波数変換された後、半導体
レーザによる電気/光変換送信部2に入力される。送信
部2からの光信号は光ファイバ3を介して光/電気変換
受信部4に伝送される。受信部4から出力される電気信
号は第2の周波数変換部7に入力され、ここで高い周波
数帯に周波数変換されてから出力端子5に導出される。(Embodiment) FIG. 1 shows a basic embodiment of the present invention. A frequency-multiplexed high frequency band electrical signal is applied to the input terminal 1 . This input electrical signal is frequency-converted into an electrical signal in a low frequency band by the first frequency converter 6, and then input to the electrical/optical conversion transmitter 2 using a semiconductor laser. The optical signal from the transmitting section 2 is transmitted to the optical/electrical conversion receiving section 4 via the optical fiber 3. The electrical signal output from the receiving section 4 is input to the second frequency converting section 7, where the frequency is converted to a higher frequency band, and then output to the output terminal 5.
したがって電気/光変換送信部2、光ファイバ3、光/
電気変換受信部4は低い周波数帯で動作することになる
。そのため第4図(a)から明らかなように、送信部2
における半導体レーザ自身の高調波歪Dn特性が改善さ
れる。また第4図(b)から明らかなように、Dn特性
が満足される範囲内で変調振幅を大きくとることができ
るので、C/N特性を改善することができる。また第2
図から明らかなように、受信部4の入力換算雑音電流密
度ln■の特性が改善されるので、より小さな受信光電
力にて所望の特性を確保できる。Therefore, the electrical/optical conversion transmitter 2, the optical fiber 3, the optical/optical
The electrical conversion receiver 4 will operate in a low frequency band. Therefore, as is clear from FIG. 4(a), the transmitter 2
The harmonic distortion Dn characteristics of the semiconductor laser itself are improved. Furthermore, as is clear from FIG. 4(b), since the modulation amplitude can be increased within a range that satisfies the Dn characteristic, the C/N characteristic can be improved. Also the second
As is clear from the figure, since the characteristic of the input equivalent noise current density ln■ of the receiving section 4 is improved, the desired characteristic can be ensured with smaller received optical power.
このことは送信部2の半導体レーザへの要求条件の緩和
につながるとともに、受信部4の受光素子への要求条件
の緩和につながり、安価で面倒な調整の必要のないホト
ダイオードを使用しても高特性を実現することができる
。This leads to a relaxation of the requirements for the semiconductor laser in the transmitter 2, as well as a relaxation of the requirements for the light-receiving element in the receiver 4. characteristics can be realized.
第2図は本発明の第2実施例を示すもので、これは第1
図の実施例におる電気/光変換送信部2に、半導体レー
ザのモニタ光を検出してレーザ駆動回路に負帰還する光
/電気変換負帰還部8を付加したものである。周波数変
換部6によって送信部2の入力周波数帯を下げたので、
負帰還部8が有効に機能し、半導体レーザのDn特性や
RIN特性が大幅に改善される。そのため、反射戻り光
を抑圧するための特殊な斜め研磨コネクタを廃止するこ
とができるなど、光フアイバ線路の接続部の反射特性を
緩和することができる。FIG. 2 shows a second embodiment of the invention, which is similar to the first embodiment.
An optical/electrical conversion negative feedback section 8 is added to the electrical/optical conversion transmission section 2 in the illustrated embodiment to detect the monitor light of the semiconductor laser and provide negative feedback to the laser drive circuit. Since the input frequency band of the transmitter 2 is lowered by the frequency converter 6,
The negative feedback section 8 functions effectively, and the Dn characteristics and RIN characteristics of the semiconductor laser are significantly improved. Therefore, it is possible to eliminate the special obliquely polished connector for suppressing reflected return light, and the reflection characteristics of the connection portion of the optical fiber line can be relaxed.
以上詳細に説明したように、この発明は、半導体レーザ
により電気/光変換する前段で入力信号を低い周波数帯
に変換し、受光素子により光/電気変換した後で周波数
を高く再変換する構成としたので、
■半導体レーザの高調波歪特性が改善される■受信部の
雑音特性が改善される
■光/電気変換負帰還技術を併用できるため、半導体レ
ーザの高調波歪、RIN特性が改善される
という効果を奏し、したがって光伝送系の各構成要素に
対する要求条件が緩和され、優れた特性の光送受信回路
を安価に量産することが可能になる。As explained in detail above, the present invention has a configuration in which an input signal is converted to a lower frequency band before electrical/optical conversion is performed by a semiconductor laser, and the frequency is reconverted to a higher frequency after the optical/electrical conversion is performed by a light receiving element. Therefore, ■ The harmonic distortion characteristics of the semiconductor laser are improved. ■ The noise characteristics of the receiving section are improved. ■ The harmonic distortion and RIN characteristics of the semiconductor laser are improved because it can be used in conjunction with optical/electrical conversion negative feedback technology. Therefore, the requirements for each component of the optical transmission system are relaxed, and it becomes possible to mass-produce optical transceiver circuits with excellent characteristics at low cost.
第1図は本発明の第1実施例による光送受信回路のブロ
ック図、第2図は同じく第2実施例のブロック図、第3
図は従来の光送受信回路のブロック図、第4図および第
5図は従来技術の問題点と本発明の詳細な説明するため
の特性図である。FIG. 1 is a block diagram of an optical transmitter/receiver circuit according to a first embodiment of the present invention, FIG. 2 is a block diagram of the second embodiment, and FIG.
The figure is a block diagram of a conventional optical transmitter/receiver circuit, and FIGS. 4 and 5 are characteristic diagrams for explaining problems in the prior art and details of the present invention.
Claims (2)
帯に周波数変換する第1の周波数変換部と、この変換部
の出力電気信号を半導体レーザにより光信号に変換して
光伝送路に送出する電気/光変換送信部と、前記光伝送
路から入力される前記光信号を電気信号に変換する光/
電気変換受信部と、この受信部の出力電気信号を任意の
高周波数帯に周波数変換する第2の周波数変換部とを備
えた光送受信回路。(1) A first frequency converter that converts the frequency of the frequency-multiplexed input electrical signal into an arbitrary low frequency band, and converts the output electrical signal of this converter into an optical signal using a semiconductor laser and sends it to the optical transmission line. an electrical/optical conversion transmitting unit that converts the optical signal input from the optical transmission line into an electrical signal;
An optical transceiver circuit comprising an electrical conversion receiver and a second frequency converter that frequency converts the electrical signal output from the receiver into an arbitrary high frequency band.
ーザのモニタ光を電気信号に変換して前記半導体レーザ
の駆動回路に負帰還する光/電気変換負帰還部を備えた
ことを特徴とする請求項(1)に記載の光送受信回路。(2) The electrical/optical conversion transmitting section includes an optical/electrical conversion negative feedback section that converts the monitor light of the semiconductor laser into an electrical signal and provides negative feedback to the drive circuit of the semiconductor laser. The optical transmitter/receiver circuit according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1139285A JPH036136A (en) | 1989-06-02 | 1989-06-02 | Optical transmitting and receiving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1139285A JPH036136A (en) | 1989-06-02 | 1989-06-02 | Optical transmitting and receiving circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH036136A true JPH036136A (en) | 1991-01-11 |
Family
ID=15241722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1139285A Pending JPH036136A (en) | 1989-06-02 | 1989-06-02 | Optical transmitting and receiving circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH036136A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005125057A1 (en) * | 2004-06-18 | 2005-12-29 | Matsushita Electric Industrial Co., Ltd. | Optical transmission device and optical transmission system |
| JP2018074477A (en) * | 2016-11-01 | 2018-05-10 | 日本電信電話株式会社 | Optical transmission system and optical transmission method |
-
1989
- 1989-06-02 JP JP1139285A patent/JPH036136A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005125057A1 (en) * | 2004-06-18 | 2005-12-29 | Matsushita Electric Industrial Co., Ltd. | Optical transmission device and optical transmission system |
| JP2018074477A (en) * | 2016-11-01 | 2018-05-10 | 日本電信電話株式会社 | Optical transmission system and optical transmission method |
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