JPH0361627B2 - - Google Patents
Info
- Publication number
- JPH0361627B2 JPH0361627B2 JP62005121A JP512187A JPH0361627B2 JP H0361627 B2 JPH0361627 B2 JP H0361627B2 JP 62005121 A JP62005121 A JP 62005121A JP 512187 A JP512187 A JP 512187A JP H0361627 B2 JPH0361627 B2 JP H0361627B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- coating layer
- impermeable
- layer
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011247 coating layer Substances 0.000 claims description 47
- 239000011521 glass Substances 0.000 claims description 42
- 238000002844 melting Methods 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 239000010410 layer Substances 0.000 claims description 17
- 230000008018 melting Effects 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000007872 degassing Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 24
- 230000005855 radiation Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000013001 point bending Methods 0.000 description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000005297 pyrex Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000005373 porous glass Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000007592 spray painting technique Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、高温強度に優れた窒化ケイ素焼結体
の製造方法に関するもので、より詳細には熱間静
水圧加圧焼結法(Hot Isostatic Pressing;略称
“HIP”)により表面組織の改善された窒化ケイ素
焼結体を製造する方法に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for producing a silicon nitride sintered body with excellent high-temperature strength, and more specifically to a method for producing a silicon nitride sintered body having excellent high-temperature strength. The present invention relates to a method for manufacturing a silicon nitride sintered body with an improved surface structure by isostatic pressing (abbreviated as "HIP").
(従来の技術)
近年、セラミツク材料をより緻密にしかも少量
の焼結助剤を用いて焼結する方法として、HIP法
が有望視され、これを利用した種々の処理技術が
開発されている。特に成形粉体から複雑な形状の
焼結体を得る場合は一般にガラス(例えばコーニ
ング社製の商品名「バイコール」、「パイレツク
ス」ガラス等)の容器中に粉体、生成形体、又は
予備焼成体を充填し、これをガラス容器の軟化点
近傍の不活性ガス圧下で予備焼成し、被圧縮体の
周囲をガラスで被覆し、このガラス被覆層を圧力
媒体としての高圧高温ガス中で、内部の粉体、生
成形体、又は予備焼成体を緻密化し、得られた焼
結体周囲のガラス質を溶解液またはサンドブラス
ト等により除去することにより目的の焼結体を得
る方法(ガラスカプセルHIP法)が主流である。(Prior Art) In recent years, the HIP method has been seen as a promising method for sintering ceramic materials to make them more dense and using a small amount of sintering aid, and various processing techniques using this method have been developed. Particularly when obtaining a complex-shaped sintered body from shaped powder, the powder, formed body, or pre-sintered body is generally placed in a container made of glass (for example, Corning's product name "Vycor" or "Pyrex" glass, etc.). This is prefired under an inert gas pressure near the softening point of the glass container, the periphery of the compressed object is covered with glass, and this glass coating layer is heated in a high pressure and high temperature gas as a pressure medium. There is a method (glass capsule HIP method) in which the desired sintered body is obtained by densifying the powder, formed body, or pre-fired body and removing the glassy material around the obtained sintered body using a dissolving liquid or sandblasting. It's mainstream.
このガラスカプセルHIP法の中で、特に特開昭
52−9369号公報明細書に開示された方法は、窒化
珪素粉末の予備成形体を高融点ガラスおよび低融
点ガラスの2層で被覆し、均衡加圧する前に脱気
し、まず低融点ガラスの融点付近まで加熱し、次
に高融点ガラスの融点付近まで加熱して、ガラス
をカプセル化し、その後予備成形体を均衡加圧し
つつ焼結している(この方法を「第1方法」と称
する)。 Among this glass capsule HIP method, especially
The method disclosed in Japanese Patent No. 52-9369 involves coating a preformed silicon nitride powder with two layers of high-melting point glass and low-melting point glass, degassing it before applying equal pressure, and first coating the low-melting point glass with two layers of high-melting point glass and low-melting point glass. The glass is heated to around its melting point, then heated to around the melting point of high-melting point glass to encapsulate the glass, and then the preform is sintered while applying equal pressure (this method is referred to as the "first method"). .
また、特開昭54−144412号公報明細書に開示さ
れた方法は、窒化珪素粉末の予備成形体を高融点
ガラスおよび/または低融点ガラスのガス透過性
のわくで被覆し、このわくを加圧ガス中で不透過
性のわくに変え、次いで均衡加圧しながら焼結し
ている(この方法を「第2方法」と称す)。 Furthermore, the method disclosed in JP-A-54-144412 covers a preformed silicon nitride powder with a gas-permeable frame made of high-melting point glass and/or low-melting point glass, and then processes this frame. It is transformed into an impermeable frame in a pressurized gas and then sintered under isostatic pressure (this method is referred to as the "second method").
(発明が解決しようとする問題点)
しかしながら、上記2種類の公報に開示された
方法において、第1方法は、脱気し後に加熱を行
つているため、ガス対流によるガス移動がなく、
被加熱物の昇温はすべて熱輻射によらなければな
らない。そのため、試料の部位によつては熱輻射
が当射せず、そのため他の熱輻射が当射する部位
と比べて熱分布に差ができてしまい、そのためガ
ス不透過性ガラス層およびガス透過性ガラス層が
混在し完全なカプセリングが非常に困難となる。
しかも場合によつては外皮のカプセリングが終了
しないうちに内皮が部分的に溶けてしまうという
不都合が生じることさえある。第2方法は、加圧
ガス(窒素ガス)中で加熱を行うため、熱伝達が
ガス対流と熱輻射の双方によつて行われ、従つて
試料の各部位での熱分布の差がつきにくいという
利点がある。しかし、わく内に加圧ガスを有する
状態でカプセリングされるため、試料を均衡加圧
する際に、試料外側の圧力が高くなると、それに
応じて内部のガス圧が大きくなつてしまい、HIP
法の試料を締め固める作用を減じるという不都合
が生じる。(Problems to be Solved by the Invention) However, in the methods disclosed in the above two types of publications, the first method performs heating after degassing, so there is no gas movement due to gas convection.
All heating of the heated object must be done by thermal radiation. Therefore, some parts of the sample are not irradiated with thermal radiation, which creates a difference in heat distribution compared to other parts of the sample that are irradiated with thermal radiation. The presence of glass layers makes complete encapsulation extremely difficult.
Moreover, in some cases, the inconvenience may even occur that the inner skin partially dissolves before the encapsulation of the outer skin is completed. In the second method, heating is performed in pressurized gas (nitrogen gas), so heat transfer is performed by both gas convection and thermal radiation, and therefore it is difficult to notice differences in heat distribution in each part of the sample. There is an advantage. However, since the sample is encapsulated with pressurized gas inside the container, when the sample is pressurized at equilibrium, if the pressure outside the sample increases, the internal gas pressure increases accordingly, resulting in HIP.
This has the disadvantage of reducing the compacting effect of the sample.
本発明の目的は、上記不都合を解消し、予備成
形体を良好にカプセリングし、且つ均衡加圧を効
率良く行うことができる窒化珪素の製造方法を提
供せんとするにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a method for producing silicon nitride, which eliminates the above-mentioned disadvantages, enables good encapsulation of a preform, and enables efficient balanced pressing.
(問題点を解決するための手段及び作用)
本発明は窒化珪素粉末から予め成形された予備
成形体を、ガス状圧力媒体を透過する多孔質の物
質であつて加熱によりガス不透過性の物質に変化
する少なくとも1層の被覆層で被覆し、前記予備
成形体を均衡加圧しつつ焼結するにあたり、
前記ガス透過性の物質をガス状圧力媒体中で昇
温して、前記ガス透過性の被覆層がガス不透過性
の被覆層に変化する直前に脱気し、さらに昇温し
てガス不透過性の被覆層に変えることを特徴とす
るものである。本発明によつて、ガス透過性の被
覆層がガス不透過性の被覆層に変化する前まで、
被覆層を有する予備成形体を均一に加熱すること
ができ、しかもガス不透過性の被覆層に変化する
直前に脱気するため、粉末成形体自体または生成
されたガス等の離脱は脱気直後のガス不透過性の
被覆層の形成で防止され、ガス不透過性の被覆層
に変化後は被覆層内のガス圧がほとんどない状態
となり、従来の公知の方法よりも予備成形体の周
囲に密に被着する。この被覆層がガス透過性から
ガス不透過性に変化する直前に脱気する際の温度
としては例えばガラス被覆層が1層の場合にはそ
のガラスの融解温度の95%の温度とし、2層の場
合には外層のガラスの融解温度の95%の温度とす
るのが好適である。ここで使用されるSi3N4粉末
原料の純度は、少なくとも99%以上であるのが望
ましい。この理由は窒化珪素中の不純物が高温焼
成中に蒸発し、気孔の原因となつたり、添加剤と
反応して低融点の液相を作り、焼結体の高温特性
を著しく劣化させるためである。(Means and Effects for Solving the Problems) The present invention provides a method of converting a preform formed from silicon nitride powder into a porous material that is permeable to a gaseous pressure medium and that is gas-impermeable by heating. and sintering the preform under isostatic pressure, the gas permeable material is heated in a gaseous pressure medium to change the gas permeability. This method is characterized in that the coating layer is degassed immediately before changing into a gas-impermeable coating layer, and the temperature is further increased to change the coating layer into a gas-impermeable coating layer. According to the invention, before the gas-permeable coating layer is transformed into a gas-impermeable coating layer,
Since the preformed body having the coating layer can be heated uniformly and degassed immediately before changing to the gas-impermeable coating layer, the powder compact itself or the generated gas can be released immediately after degassing. This is prevented by the formation of a gas-impermeable coating layer, and after changing to a gas-impermeable coating layer, there is almost no gas pressure in the coating layer, and the gas pressure around the preform is lower than in conventional known methods. Deposit densely. The temperature at which the gas is degassed just before the coating layer changes from gas permeable to gas impermeable is, for example, in the case of one glass coating layer, the temperature is 95% of the melting temperature of the glass; In this case, it is preferable to set the temperature to 95% of the melting temperature of the outer layer glass. The purity of the Si 3 N 4 powder raw material used here is preferably at least 99% or higher. The reason for this is that impurities in silicon nitride evaporate during high-temperature firing, causing pores, and reacting with additives to create a low-melting-point liquid phase, which significantly deteriorates the high-temperature properties of the sintered body. .
ガス状の圧力媒体としては焼成中の窒化珪素の
分解、酸化を防止するため不活性ガス、例えばア
ルゴン、ヘリウム及び窒素ガスを使用するのが好
ましい。 As the gaseous pressure medium, it is preferable to use an inert gas, such as argon, helium, or nitrogen gas, in order to prevent decomposition and oxidation of silicon nitride during firing.
本発明の好適実施例において、前記被覆層を構
成する物質が高融点ガラスから成るのが好適であ
る。高融点ガラスとしては、SiO296.7重量%、
B2O32.9重量%及びAl2O30.4重量%を含有するバ
イコールガラス、石英ガラス、SiO2及びB2O3の
混合物が有利である。 In a preferred embodiment of the invention, the material constituting the coating layer is preferably made of high melting point glass. As high melting point glass, SiO 2 96.7% by weight,
Preference is given to a mixture of Vycor glass, quartz glass, SiO 2 and B 2 O 3 containing 2.9 % by weight of B 2 O 3 and 0.4% by weight of Al 2 O 3 .
さらに本発明の他の実施例において、前記被覆
層が内側および外側の2層より成り、内側被覆層
を高融点ガラスとし、外側被覆層を低融点ガラス
とし、この内側被覆層を外側被覆層がガス不透過
性の層に変わつた後にガス不透過性の層に変える
のが好適である。このように2層の被覆層とする
ことにより、前述したような粉体成形体からのガ
スの離脱をさらに有効に防止することができ、緻
密なカプセリングが可能となる。これら被覆層の
塗布は、例えば窒化珪素粉末の懸濁液への浸漬、
スプレー塗装または他の高温噴霧によつて行われ
る。低融点ガラスとしては、例えばSiO2の他に
B2O3、Al2O3、Na2O、K2OおよびCaOを少量含
有するパイレツクスガラス、さらにSiO2および
Al2O3、その他にB2O3、CaOおよびMgOを少量
含有するケイ酸アルミニウムを使用することがで
きる。 Furthermore, in another embodiment of the present invention, the coating layer is composed of two layers, an inner layer and an outer layer, the inner coating layer is made of high melting point glass, the outer coating layer is made of low melting point glass, and the inner coating layer is replaced by the outer coating layer. It is preferred to change to the gas-impermeable layer after changing to the gas-impermeable layer. By providing two coating layers in this manner, it is possible to more effectively prevent the gas from leaving the powder compact as described above, and it is possible to perform dense encapsulation. Application of these coating layers can be carried out, for example, by dipping into a suspension of silicon nitride powder,
Performed by spray painting or other hot atomization. In addition to SiO2 , for example, low melting point glasses include
Pyrex glass containing small amounts of B 2 O 3 , Al 2 O 3 , Na 2 O, K 2 O and CaO, as well as SiO 2 and
Aluminum silicate containing Al 2 O 3 and also small amounts of B 2 O 3 , CaO and MgO can be used.
またさらに本発明の実施例において、前記ガス
状圧力媒体の圧力を0.3乃至10気圧の範囲とする。
ガス圧が0.3気圧以下ではガス対流が発生せず、
前記したような不均一な熱輻射による不完全な被
覆層を形成するからであり、10気圧以上では被覆
層がガス透過性からガス不透過性に変化する直前
の脱気の際に高温排ガス流が急速に排出されて、
脱気装置、例えばガス排出用導管のつなぎ目のパ
ツキン等を損傷する恐れがあるためである。 Furthermore, in an embodiment of the present invention, the pressure of the gaseous pressure medium is in the range of 0.3 to 10 atmospheres.
Gas convection does not occur when the gas pressure is below 0.3 atmospheres,
This is because an incomplete coating layer is formed due to non-uniform heat radiation as described above, and at temperatures above 10 atmospheres, the high temperature exhaust gas flow is generated during deaeration just before the coating layer changes from gas permeable to gas impermeable. is rapidly excreted,
This is because there is a risk of damaging the degassing device, for example, the seals at the joints of the gas exhaust pipes.
(実施例) 本発明の製造方法の実施例を詳細に説明する。(Example) Examples of the manufacturing method of the present invention will be described in detail.
実施例 1
純度が99.9%、平均粒径が約1μmの窒化珪素
(Si3N4)粉末100重量%に対し、SrO1重量%、
MgO4重量%、CeO25重量%を添加して混合し、
射出成形法にて第1図に断面にて示すような有底
円筒形状の試料1を作製した。Example 1 100% by weight of silicon nitride (Si 3 N 4 ) powder with a purity of 99.9% and an average particle size of about 1 μm, 1% by weight of SrO,
Add 4% by weight of MgO and 5% by weight of CeO2 and mix;
Sample 1 having a cylindrical shape with a bottom as shown in cross section in FIG. 1 was manufactured by injection molding.
次にこの有底円筒形試料1にSiO296.7重量%、
B2O32.9重量%及びAl2O30.4重量%を含有するバ
イコールガラス粉末をスプレーにより塗布して、
厚さが1.0mmの多孔質のガラス被覆層2を形成し
た(第2図参照)。 Next, 96.7% by weight of SiO 2 was added to this bottomed cylindrical sample 1.
Applying Vycor glass powder containing 2.9% by weight of B 2 O 3 and 0.4% by weight of Al 2 O 3 by spraying,
A porous glass coating layer 2 having a thickness of 1.0 mm was formed (see FIG. 2).
このガラスが被覆された成形体をHIP装置に装
入する。このHIP装置は、内部に加熱装置を有す
る圧力容器であり、この装置に内部のガスを排出
する導管および不活性ガスを供給する導管が接続
されている。このHIP装置内を室温で脱気し、次
いでこの装置内に窒素ガスを充填して0.3〜10気
圧の範囲の雰囲気下で1520℃まで連続的に昇温す
る。 This glass-covered molded body is loaded into a HIP device. This HIP device is a pressure vessel that has a heating device inside, and a conduit for discharging internal gas and a conduit for supplying inert gas are connected to this device. The inside of this HIP apparatus is degassed at room temperature, then filled with nitrogen gas, and the temperature is continuously raised to 1520°C under an atmosphere in the range of 0.3 to 10 atm.
温度が1520℃に到達した時点から装置内を脱気
して真空に近い状態にし、その後加熱装置からの
熱輻射によつて連続的に1520℃から1600℃まで50
℃/hrで上げる。温度1600℃に達してしばらくす
るとガス不透過性のガラス被覆層2′ができた
(第3図参照)。 Once the temperature reaches 1520℃, the inside of the device is degassed to create a near-vacuum state, and then heated continuously from 1520℃ to 1600℃ for 50 minutes using heat radiation from the heating device.
Increase in °C/hr. After a while after the temperature reached 1600°C, a gas-impermeable glass coating layer 2' was formed (see Figure 3).
その後HIP装置内に窒素ガスまたはアルゴンガ
スまたはヘリウムガスを充填して、圧力100乃至
200気圧にする。次に装置内の温度を1800〜2000
℃まで昇温して窒化珪素を焼結した。このHIP処
理終了後HIP装置から取り出して冷却し、焼結体
に付着するガラスをサンドブラスト等で取り除い
た。 After that, fill the HIP device with nitrogen gas, argon gas, or helium gas to reduce the pressure to 100
Make the pressure 200 atm. Next, set the temperature inside the device to 1800-2000.
The temperature was raised to ℃ to sinter silicon nitride. After the HIP process was completed, the sintered body was taken out from the HIP apparatus and cooled, and the glass adhering to the sintered body was removed by sandblasting or the like.
なお、比較のため同一材料を用いて、従来の公
知文献に記載されたような、真空中においてガラ
ス被覆層をガス透過性からガス不透過性に変えた
場合と、所定のガス圧中でガラス被覆層をガス透
過性からガス不透過性に変えた場合との2種類の
焼結体試料を作製した(これらを「試料1」、「試
料2」とする)。 For comparison, we used the same material and changed the glass coating layer from gas-permeable to gas-impermeable in vacuum, as described in conventional known literature, and when the glass coating layer was changed from gas-permeable to gas-impermeable in vacuum, and Two types of sintered body samples were prepared, one in which the coating layer was changed from gas permeable to gas impermeable (these are referred to as "Sample 1" and "Sample 2").
これら3種類の焼結体試料からJIS R1601−
1981に規定される角棒を切り出して、4点曲げ強
さを試験したところ、試料1では92Kgf/mm2、試
料2では95Kgf/mm2、本発明による試料では124
Kgf/mm2であつた。 From these three types of sintered compact samples, JIS R1601−
When a square bar specified in 1981 was cut out and tested for four-point bending strength, sample 1 had a strength of 92Kgf/ mm2 , sample 2 had a strength of 95Kgf/ mm2 , and the sample according to the present invention had a strength of 124Kgf/mm2.
It was Kgf/ mm2 .
実施例 2
第1図に示した実施例1と同一の成分の予備成
形体を作製し、実施例1と同様に高融点のバイコ
ールガラスを塗布し、その外側にさらにSiO280.3
重量%、B2O312.2重量%、Al2O32.8重量%、
Na2O4.0重量%、K2O0.4重量%及びCaO0.3重量
%を含有するパイレツクスガラスを塗布し、その
結果、厚さがそれぞれ0.1〜0.2mm、0.5〜0.8mmの
2層の多孔質ガラス被覆層2,3を形成した(第
4図参照)。Example 2 A preformed body having the same components as in Example 1 shown in FIG .
wt%, B2O3 12.2wt %, Al2O3 2.8wt %,
Pyrex glass containing 4.0% by weight of Na 2 O, 0.4% by weight of K 2 O and 0.3% by weight of CaO was applied, resulting in two layers with thicknesses of 0.1-0.2 mm and 0.5-0.8 mm, respectively. Porous glass coating layers 2 and 3 were formed (see FIG. 4).
このガラス被覆層成形体を前述したHIP装置に
装入する。このHIP装置内を室温で脱気し、次い
でこの装置内に窒素ガスを充填してガス圧0.3〜
10気圧の雰囲気下で950℃まで連続的に昇温する。 This glass coating layer molded product is loaded into the HIP apparatus described above. The inside of this HIP device is degassed at room temperature, and then filled with nitrogen gas to a gas pressure of 0.3~
The temperature is raised continuously to 950℃ in an atmosphere of 10 atm.
温度が950℃に到達した時点から脱気して真空
状態にし、その後加熱装置からの熱輻射にて1000
℃まで昇温する。このとき被覆層3は被覆層内部
にガスをほとんど含有しない状態でガス不透過性
となつている(第5図参照)。次いでほぼ真空の
状態で温度を1000℃から1450℃まで連続的に上げ
る。温度が1450°に達してしばらくするとガス不
透過性のガラス被覆層2′ができた。 When the temperature reaches 950℃, it is degassed to create a vacuum state, and then heated to 1000℃ by heat radiation from the heating device.
Raise the temperature to ℃. At this time, the coating layer 3 contains almost no gas inside the coating layer and is gas-impermeable (see FIG. 5). The temperature is then raised continuously from 1000°C to 1450°C under near-vacuum conditions. Shortly after the temperature reached 1450°, a gas-impermeable glass coating layer 2' was formed.
その後実施例1と同様に不活性ガスを充填して
ガス圧100乃至200atm、温度1900゜でガス圧100乃
至200atm、温度1900゜で成形体をHIP焼結した。
HIP処理終了後焼結体に付着するガラスを除去し
た。 Thereafter, in the same manner as in Example 1, the molded body was filled with inert gas and subjected to HIP sintering at a gas pressure of 100 to 200 atm and a temperature of 1900°.
After the HIP process was completed, the glass adhering to the sintered body was removed.
比較のため実施例1と同様に従来の2方法を用
いて焼結体を作製して、JIS R1601に規定される
4点曲げ強さを本発明による試料、従来の2方法
による試料について測定したところ、従来の方法
による試料の4点曲げ強さが90Kgf/mm2および93
Kgf/mm2であるのに対し、本発明による試料の4
点曲げ強さは120Kgf/mm2であつた。 For comparison, sintered bodies were produced using the two conventional methods as in Example 1, and the four-point bending strength specified in JIS R1601 was measured for the samples according to the present invention and the samples according to the two conventional methods. However, the four-point bending strength of the sample obtained using the conventional method was 90Kgf/ mm2 and 93
Kgf/mm 2 while that of the sample according to the invention was 4
The point bending strength was 120Kgf/ mm2 .
(発明の効果)
以上から明らかなように、本発明の窒化珪素の
製造方法は、予備成形体に塗布した被覆層を均一
に加熱して、被覆層全体を均一にガス不透過性に
することができ、しかもガス不透過性の被覆層の
内部にガスがほとんどないため、HIP処理時に外
圧が成形体を良好に締め固めることができるた
め、製造された焼結体の機械的強度を従来の約
1.3倍にも高めることができる。(Effects of the Invention) As is clear from the above, the method for producing silicon nitride of the present invention uniformly heats the coating layer applied to the preform to make the entire coating layer uniformly gas-impermeable. Moreover, since there is almost no gas inside the gas-impermeable coating layer, the external pressure can compact the compact during the HIP process, which improves the mechanical strength of the produced sintered compact compared to conventional about
It can be increased to 1.3 times.
第1図は本発明の実施例における試料形状を示
す断面図、第2,3図は本発明の実施例における
工程を示す説明図、第4,5図は本発明の他の実
施例における工程を示す説明図である。
1…試料、2,2′…高融点ガラス被覆層、3,
3′…低融点ガラス被覆層。
Fig. 1 is a sectional view showing the sample shape in an embodiment of the present invention, Figs. 2 and 3 are explanatory diagrams showing steps in an embodiment of the invention, and Figs. 4 and 5 are steps in another embodiment of the invention. FIG. 1... Sample, 2, 2'... High melting point glass coating layer, 3,
3'...Low melting point glass coating layer.
Claims (1)
を、ガス状圧力媒体を透過する多孔質の物質であ
つて加熱によりガス不透過性の物質に変化する少
なくとも1層の被覆層で被覆し、前記予備成形体
を均衡加圧しつつ焼結するにあたり、 前記ガス透過性の物質をガス状圧力媒体中で昇
温して、前記ガス透過性の被覆層がガス不透過性
の被覆層に変化する直前に脱気し、さらに昇温し
てガス不透過性の被覆層に変えることを特徴とす
る窒化珪素焼結体の製造方法。 2 前記被覆層を構成する物質が高融点ガラスか
ら成ることを特徴とする特許請求の範囲第1項記
載の窒化珪素焼結体の製造方法。 3 前記被覆層が内側および外側の2層より成
り、内側被覆層を高融点ガラスとし、外側被覆層
を低融点ガラスとし、この内側被覆層を外側被覆
層がガス不透過性の層に変わつた後にガス不透過
性の層に変えることを特徴とする特許請求の範囲
第1項記載の窒化珪素焼結体の製造方法。 4 前記ガス状圧力媒体の圧力を0.3乃至10気圧
の範囲とすることを特徴とする特許請求の範囲第
1項乃至第3項の何れか一項記載の窒化珪素焼結
体の製造方法。[Scope of Claims] 1. A preform formed from silicon nitride powder is coated with at least one layer of a porous material that is permeable to a gaseous pressure medium and that changes into a gas-impermeable material upon heating. coating and sintering the preform under isostatic pressure, the gas-permeable material is heated in a gaseous pressure medium so that the gas-permeable coating layer becomes gas-impermeable. A method for producing a silicon nitride sintered body, which comprises degassing the material immediately before changing into a coating layer, and further increasing the temperature to convert the material into a gas-impermeable coating layer. 2. The method for producing a silicon nitride sintered body according to claim 1, wherein the material constituting the coating layer is made of high melting point glass. 3. The coating layer is composed of two layers, an inner layer and an outer layer, the inner coating layer is made of high melting point glass, the outer coating layer is made of low melting point glass, and the outer coating layer is replaced by a gas impermeable layer. 2. The method for producing a silicon nitride sintered body according to claim 1, wherein the layer is later changed to a gas-impermeable layer. 4. The method for producing a silicon nitride sintered body according to any one of claims 1 to 3, characterized in that the pressure of the gaseous pressure medium is in the range of 0.3 to 10 atmospheres.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62005121A JPS63176366A (en) | 1987-01-14 | 1987-01-14 | Manufacture of silicon nitride sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62005121A JPS63176366A (en) | 1987-01-14 | 1987-01-14 | Manufacture of silicon nitride sintered body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63176366A JPS63176366A (en) | 1988-07-20 |
| JPH0361627B2 true JPH0361627B2 (en) | 1991-09-20 |
Family
ID=11602483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62005121A Granted JPS63176366A (en) | 1987-01-14 | 1987-01-14 | Manufacture of silicon nitride sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63176366A (en) |
-
1987
- 1987-01-14 JP JP62005121A patent/JPS63176366A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63176366A (en) | 1988-07-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4112143A (en) | Method of manufacturing an object of silicon nitride | |
| JPS597323B2 (en) | Method of manufacturing articles from powder | |
| JPS5820907B2 (en) | Method for producing non-porous polycrystalline compacts by uniform heating press | |
| JPS6245195B2 (en) | ||
| US5925405A (en) | Method of manufacturing ceramic, metallic or ceramo-metallic, shaped bodies and layers | |
| SE430981B (en) | Process for encapsulating in glass and / or ceramics a porous molded body of reaction sintered silica | |
| JPS5935870B2 (en) | Silicon nitride object manufacturing method | |
| US4812272A (en) | Process by compacting a porous structural member for hot isostatic pressing | |
| SU1011045A3 (en) | Metxhod for making products of silicone nitride | |
| JPS6232241B2 (en) | ||
| JPH0361627B2 (en) | ||
| JPS63222075A (en) | Manufacturing method of high-density sintered body | |
| JPH04193756A (en) | Production of sulfide ceramics | |
| JPH11180778A (en) | Encapsulating method by direct coating and hot isostatic press forming | |
| JPS5941954B2 (en) | Manufacturing method of high-density ceramic sintered body | |
| GB2024866A (en) | Isostatically hot pressed silicon nitride | |
| JPH0394003A (en) | Manufacture of object from powdery material | |
| JPS62207768A (en) | Manufacture of high density silicon nitride material | |
| JPS61232272A (en) | Manufacture of high density silicon nitride sintered body | |
| JPH0354170A (en) | Hot hydrostatic pressing method | |
| JPS616180A (en) | Thermal hydrostatic pressure treatment for ceramic | |
| JPH0114194B2 (en) | ||
| JPH0130787B2 (en) | ||
| JPS6149270B2 (en) | ||
| JPS6234711B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |