JPH0361631B2 - - Google Patents
Info
- Publication number
- JPH0361631B2 JPH0361631B2 JP60249361A JP24936185A JPH0361631B2 JP H0361631 B2 JPH0361631 B2 JP H0361631B2 JP 60249361 A JP60249361 A JP 60249361A JP 24936185 A JP24936185 A JP 24936185A JP H0361631 B2 JPH0361631 B2 JP H0361631B2
- Authority
- JP
- Japan
- Prior art keywords
- melt
- crystal
- seed
- band
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60249361A JPS62108797A (ja) | 1985-11-07 | 1985-11-07 | 帯状結晶製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60249361A JPS62108797A (ja) | 1985-11-07 | 1985-11-07 | 帯状結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62108797A JPS62108797A (ja) | 1987-05-20 |
| JPH0361631B2 true JPH0361631B2 (sr) | 1991-09-20 |
Family
ID=17191879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60249361A Granted JPS62108797A (ja) | 1985-11-07 | 1985-11-07 | 帯状結晶製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62108797A (sr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2195475B1 (en) | 2007-07-27 | 2012-11-14 | Max Era, Inc. | Wafer/ribbon crystal and method for its manufacture |
-
1985
- 1985-11-07 JP JP60249361A patent/JPS62108797A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62108797A (ja) | 1987-05-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3591348A (en) | Method of growing crystalline materials | |
| DE1291320B (de) | Verfahren zum Ziehen dendritischer Kristalle | |
| DE1544320B1 (de) | Vorrichtung zur kontinuierlichen Herstellung eines einkristallinen Bandes aus Halbleitermaterial | |
| JPS62108797A (ja) | 帯状結晶製造装置 | |
| US4469552A (en) | Process and apparatus for growing a crystal ribbon | |
| JP2627901B2 (ja) | 結晶材料の融液サセプタの蓋 | |
| JP2783049B2 (ja) | 単結晶シリコン棒の製造方法及び製造装置 | |
| JP2947529B2 (ja) | 整形結晶の製造方法及び製造装置 | |
| JPS6111914B2 (sr) | ||
| JPS62113791A (ja) | 帯状シリコン結晶製造装置 | |
| Weyher | The liquid surface tension as a factor influencing the VLS growth of silicon crystals | |
| JP2679708B2 (ja) | 有機膜の作製方法 | |
| JPS609000B2 (ja) | 帯状シリコン結晶の成長装置 | |
| JPS585880B2 (ja) | 帯状シリコン結晶の製造方法 | |
| JPS59102891A (ja) | シリコン単結晶の製造方法 | |
| JPS5848418A (ja) | 平板状シリコン基板の成長方法 | |
| JPH0331675B2 (sr) | ||
| JP2600078B2 (ja) | 結晶成長装置 | |
| JPS5973492A (ja) | 帯状シリコン結晶の製造装置 | |
| JPH09227272A (ja) | 単結晶の引上げ方法及び装置 | |
| Hyugaji et al. | Non-cubic metal crystal plates with low dislocation density and their applications | |
| JPS62182198A (ja) | 帯状シリコン結晶の製造方法 | |
| JPH03187994A (ja) | 分子線気相成長装置における基板保持装置 | |
| JPS5950632B2 (ja) | 帯状シリコン結晶の成長装置 | |
| JP4870859B2 (ja) | 液相エピタキシャル成長装置及び成長方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |