JPH0361844A - Measuring apparatus for reaction of gas when temperature is increased - Google Patents
Measuring apparatus for reaction of gas when temperature is increasedInfo
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- JPH0361844A JPH0361844A JP1196763A JP19676389A JPH0361844A JP H0361844 A JPH0361844 A JP H0361844A JP 1196763 A JP1196763 A JP 1196763A JP 19676389 A JP19676389 A JP 19676389A JP H0361844 A JPH0361844 A JP H0361844A
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- gas
- reaction
- temperature
- valve
- pressure
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- Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
【産業上の利用分野1
本発明は、装置外の圧力変化及び温度変化や、反応ガス
熱等の影響を受けずに、安定で高精度の測定を可能にす
る昇温ガス反応測定装置に関する。Detailed Description of the Invention [Industrial Application Field 1] The present invention is an elevation system that enables stable and highly accurate measurement without being affected by pressure changes and temperature changes outside the device, reaction gas heat, etc. This invention relates to a warm gas reaction measuring device.
【従来の技術1
金属含有触媒や無機化合物等の研究において、酸化、還
元及び硫化は極めて重要な処理である。[Prior art 1] Oxidation, reduction, and sulfidation are extremely important treatments in research on metal-containing catalysts, inorganic compounds, and the like.
これらの過程の動的変化を知るための測定法として、昇
温ガス反応法、例えば昇温還元反応(TPR:temp
erature programmed reduct
ion ) 、昇温酸化反応(TPO: temper
ature programmed oxidatio
n )及び昇温硫化反応(TPS: temperat
ure programmedsulfiding )
が行なわれている。As a measurement method to understand the dynamic changes in these processes, temperature-programmed gas reaction methods, such as temperature-programmed reduction reactions (TPR), are used.
erasure programmed reduce
ion), temperature-programmed oxidation reaction (TPO: temperature
ature programmed oxidation
n) and temperature-programmed sulfurization reaction (TPS)
ure programmed sulfiding)
is being carried out.
昇温ガス反応用の装置としては、例えば第7図に示すよ
うな装置が知られている[N、W、 Hurst等、C
atal、 Rev、、 24,233 (1985)
: P、Arnoldy等、J、Catal、、 92
゜35 (1985)参照]、第7図に示す測定装置で
、例えば昇温還元反応(TPR)又は昇温硫化反応(’
rps)を実施する場合には、水素ガスを反応の前後に
熱伝導度検出器1に通し、反応前後の水素ガスの熱伝導
度の差を測定し、その差から水素ガスの消費量を決定す
ることができる。また、反応器4の下流に設けた質量分
析器7や紫外分光光度計8によって反応生成物の種類や
生成量等を調べることができる。昇温硫化反応(’rp
s)の場合について説明すると、キャリアガス(例えば
アルゴンガス〉で希釈された水素ガスは、流量制御装置
3(通常、減圧弁と流量計とからなる〉を経由して熱伝
導度検出器1に送られ、続いて反応器4に送られる。As an apparatus for a heated gas reaction, for example, an apparatus as shown in FIG. 7 is known [N, W, Hurst, etc., C
atal, Rev., 24, 233 (1985)
: P, Arnoldy et al., J, Catal, 92
35 (1985)], for example, temperature programmed reduction reaction (TPR) or temperature programmed sulfidation reaction ('
rps), pass hydrogen gas through the thermal conductivity detector 1 before and after the reaction, measure the difference in thermal conductivity between the hydrogen gas before and after the reaction, and determine the amount of hydrogen gas consumed from the difference. can do. Further, the type and amount of reaction products can be investigated using a mass spectrometer 7 and an ultraviolet spectrophotometer 8 provided downstream of the reactor 4. Temperature-programmed sulfidation reaction ('rp
In the case of s), hydrogen gas diluted with a carrier gas (for example, argon gas) is sent to the thermal conductivity detector 1 via a flow rate controller 3 (usually consisting of a pressure reducing valve and a flow meter). and subsequently to reactor 4.
一方、別の入口2aからキャリアガス(例えばアルゴン
ガス)で希釈された硫化水素ガスが流量制御装置3aを
経て反応器4に送られる0反応器4で、それらのガスが
被検化合物5と接触して硫化反応を起こす。反応器4は
、温度プログラマ(図示せず〉に接続したオーブン6内
にある。温度プログラマはオーブン6の温度制御を行な
う。硫化処理を受けたガスは、反応器4を出て、質量分
析器7や紫外分光光度計8に必要なデータを送り、更に
分子ふるいトラップ9を介して再び熱伝導度検出器1に
送られる。On the other hand, hydrogen sulfide gas diluted with a carrier gas (for example, argon gas) is sent from another inlet 2a to a reactor 4 via a flow rate controller 3a, where these gases come into contact with the test compound 5. to cause a sulfurization reaction. The reactor 4 is located within an oven 6 which is connected to a temperature programmer (not shown) which controls the temperature of the oven 6.The sulfurized gas exits the reactor 4 and is transferred to a mass spectrometer. The necessary data is sent to the ultraviolet spectrophotometer 7 and the ultraviolet spectrophotometer 8, and then sent again to the thermal conductivity detector 1 via the molecular sieve trap 9.
[発明が解決しようとする課題1
昇温ガス反応を調べる場合には、反応ガスの流量及び測
定装置内の圧力を制御することが重要である。従来の昇
温ガス反応測定装置では、前記のとおり、反応ガス入口
に、減圧弁と流量計とからなる流量制御装置を設けてガ
スの流量及び圧力の制御をしていたが、十分ではなかっ
た。すなわち、大気圧(実験室内の圧力〉の変化や反応
器内の圧力変化によって測定時のベースラインが変化し
、感度も一定しないという問題があった。また、昇温還
元反応(TPR)及び昇温硫化反応(’rps)では水
素の増減を、そして昇温酸化反応〈刊す〉では酸素の増
減を選択的に検出するために、測定装置の検出部を構成
する熱伝導度検出器及び分子ふるいトラップの温度制御
も重要で、その制御が感度やゼロ点の安定性に直接影響
することも分かった。これらの外的環境の変動及び測定
系内の圧力や熱の影響は、特に試料量が少なく、検出器
の感度を高くしである場合や、試料量が多く反応が急激
に起きる場合に顕著であった。[Problem to be Solved by the Invention 1] When investigating a heated gas reaction, it is important to control the flow rate of the reaction gas and the pressure within the measuring device. As mentioned above, in conventional heated gas reaction measurement devices, a flow rate control device consisting of a pressure reducing valve and a flow meter was installed at the reaction gas inlet to control the gas flow rate and pressure, but this was not sufficient. . In other words, there was a problem that the baseline during measurement changed due to changes in atmospheric pressure (pressure inside the laboratory) or pressure inside the reactor, and the sensitivity was not constant. In order to selectively detect the increase and decrease of hydrogen in the temperature sulfurization reaction ('RPS) and the increase and decrease of oxygen in the temperature programmed oxidation reaction, the thermal conductivity detector and molecules that make up the detection part of the measuring device are used. Temperature control of the sieve trap is also important, and it was found that this control directly affects the sensitivity and zero point stability.These changes in the external environment and the effects of pressure and heat within the measurement system are especially important when controlling the sample volume. This was noticeable when the sensitivity of the detector was high, or when the amount of sample was large and the reaction occurred rapidly.
従って、本発明の目的は、大気圧や大気温度等の外的条
件が変化したり、反応器内の圧力や反応ガス熱が変化し
ても、それらの影響を受けずに安定で高精度の測定が可
能な昇温ガス反応測定装置を提供することにある。Therefore, it is an object of the present invention to achieve stable and highly accurate processing without being affected by changes in external conditions such as atmospheric pressure and temperature, or changes in the pressure inside the reactor or the heat of the reaction gas. The object of the present invention is to provide a heated gas reaction measuring device that can perform measurements.
[課題を解決するための手段1
前記の目的は、本発明により、反応気体供給装置と、こ
れに連結された反応器と、その反応器の出口に連結され
た気体成分測定装置とを有する昇温ガス反応測定装置に
おいて、前記の気体成分測定装置を構成する熱伝導度検
出器とその熱伝導度検出器の上流に位置する分離器とを
温度制御装置の制御下におくこと、及び前記気体成分測
定装置の下流に背圧弁を配置することを特徴とする、昇
温ガス反応測定装置によって達成することができる。[Means for Solving the Problems 1] According to the present invention, the above object is to provide an elevator having a reaction gas supply device, a reactor connected to the reactor, and a gas component measuring device connected to the outlet of the reactor. In the hot gas reaction measuring device, a thermal conductivity detector constituting the gas component measuring device and a separator located upstream of the thermal conductivity detector are placed under the control of a temperature control device, and the gas This can be achieved by a heated gas reaction measuring device characterized by arranging a back pressure valve downstream of the component measuring device.
すなわち、従来の昇温ガス反応測定装置においては、減
圧弁と流量計とからなる流量制御装置によって反応ガス
の流量調整や圧力調整を行なっていたのに対して、本発
明によれば、前記の流量制御装置に加えて、更に背圧弁
を設けることにより、測定系内の急激な反応による系内
圧力の変動や大気圧変動の影響を実質的に排除して測定
時のベースラインを安定に維持することを可能にすると
共に、気体成分測定装置を構成する熱伝導度検出器とそ
の熱伝導度検出器の上流に位置する分離器とを温度制御
装置の制御下におく(例えば、恒温槽内に配置する〉こ
とにより、系内温度や大気温度の変動の影響を実質的に
排除することを可能にするものである。That is, in contrast to the conventional heated gas reaction measurement apparatus, in which the flow rate and pressure of the reaction gas were adjusted by a flow rate control device consisting of a pressure reducing valve and a flow meter, according to the present invention, the above-mentioned In addition to the flow rate control device, by providing a back pressure valve, it virtually eliminates the influence of system pressure fluctuations due to sudden reactions within the measurement system and atmospheric pressure fluctuations, and maintains a stable baseline during measurement. At the same time, the thermal conductivity detector constituting the gas component measuring device and the separator located upstream of the thermal conductivity detector are placed under the control of a temperature control device (for example, in a thermostatic oven). This arrangement makes it possible to substantially eliminate the effects of fluctuations in system temperature and atmospheric temperature.
以下、図面を参照しながら本発明を更に具体的に説明す
る。Hereinafter, the present invention will be explained in more detail with reference to the drawings.
第1図は、第7図に示した従来の測定装置に、本発明に
よる背圧弁と温度制御装置(例えば恒温槽)とを設けた
状態を説明する模式図である。FIG. 1 is a schematic diagram illustrating a state in which the conventional measuring device shown in FIG. 7 is provided with a back pressure valve and a temperature control device (for example, a thermostat) according to the present invention.
第1図に示すように、熱伝導度検出器1と分子ふるいト
ラップ9とを恒温槽11内に配置し、熱伝導度検出器1
の下流に背圧弁10を設ける。As shown in FIG.
A back pressure valve 10 is provided downstream of.
本発明による昇温硫化反応(’rps)測定装置の具体
的態様を第2図に示す。A specific embodiment of the temperature programmed sulfidation reaction ('rps) measuring device according to the present invention is shown in FIG.
第2図に示すように、水素ガス/アルゴンガスは、入口
E1から入力圧制御弁V1.入力圧力計01、if素ト
ラップT1、マスフローコントローラMCIそして熱伝
導度検出器1を経由して反応ガス選択弁RTIに送られ
る。また、硫化水素ガス/アルゴンガスは、別の入口E
2から入力圧制御弁v2、入力圧力計02、トラップT
2、そしてマスフローコントローラMC2を経由し、前
記の水素ガス/アルゴンガスと一緒になって反応ガス選
択弁RTIに送られる。更に、ガス選択弁RVによって
選ばれたガス(窒素ガス、空気又はアルゴンガス〉は、
入力圧制御弁V3、入力圧力計03、ガス流制御弁■4
1.そしてフローメータG4を経由して同じく反応ガス
選択弁RTIに送られる。As shown in FIG. 2, hydrogen gas/argon gas is supplied from the inlet E1 to the input pressure control valve V1. It is sent to the reaction gas selection valve RTI via the input pressure gauge 01, the if elementary trap T1, the mass flow controller MCI, and the thermal conductivity detector 1. In addition, hydrogen sulfide gas/argon gas is supplied to another inlet E.
2 to input pressure control valve v2, input pressure gauge 02, trap T
2, and is sent together with the hydrogen gas/argon gas to the reaction gas selection valve RTI via the mass flow controller MC2. Furthermore, the gas selected by the gas selection valve RV (nitrogen gas, air or argon gas) is
Input pressure control valve V3, input pressure gauge 03, gas flow control valve ■4
1. Then, it is also sent to the reaction gas selection valve RTI via the flow meter G4.
反応ガス選択弁RTIは入口2個と出口2個をもち、各
入口からのガスを、反応器4又は検出ガス選択弁RT2
のいずれかへ案内する。反応器4は、温度プログラマ〈
図示せず〉に接続したオーブン6により温度制御を行な
うことができる。検出ガス選択弁RT2も入口2個と出
口2個をもち、反応ガス選択弁RTI及び反応器4から
入ってくる各ガスを、検出系又は(出力圧針G6及び出
力圧制御弁V5を経由して〉排気口VTIのいずれかへ
案内する。検出ガス選択弁RT2から検出系へ送られた
ガスは、質量分析器7ヘデータを送った後、紫外線バイ
パス弁によって場合により紫外分光光度計8を経由し、
恒温槽11内に配置されている分子ふるいトラップ9を
経て熱伝導度検出器1に至る0分子ふるいトラップ9は
、生成ガス中に含まれるHO,H3,■等を捕集する。The reaction gas selection valve RTI has two inlets and two outlets, and the gas from each inlet is transferred to the reactor 4 or the detection gas selection valve RT2.
Guide you to one of the following. Reactor 4 is equipped with a temperature programmer
Temperature control can be carried out by an oven 6 connected to (not shown). The detection gas selection valve RT2 also has two inlets and two outlets, and allows each gas entering from the reaction gas selection valve RTI and the reactor 4 to be passed through the detection system or (via the output pressure needle G6 and output pressure control valve V5). >Guided to either exhaust port VTI.The gas sent to the detection system from the detection gas selection valve RT2 sends data to the mass spectrometer 7, and then is passed through the ultraviolet spectrophotometer 8 by the ultraviolet bypass valve as the case may be. ,
The zero-molecule sieve trap 9, which reaches the thermal conductivity detector 1 via the molecular sieve trap 9 arranged in the thermostatic chamber 11, collects HO, H3, ■, etc. contained in the generated gas.
熱伝導度検出2 2 2
器1を出たガスは、更に出力圧針05と背圧弁10を経
て、ガスクリーナ匡で処理されてから排気口Vr2から
排出される。従って、反応ガス選択弁RTI及び検出ガ
ス選択弁RT2を適当に切り替えることにより、入口E
1からの水素ガス/アルゴンガスを、反応器4における
反応の前後に熱伝導度検出器1に通してその熱伝導度の
変化を測定することができる。また、水素/硫化水素/
アルゴンのガス混合物を反応器4で処理した後の変化を
質量分析器7及び紫外分光光度計8で測定することがで
きる。The gas exiting the thermal conductivity detector 2 2 2 further passes through an output pressure needle 05 and a back pressure valve 10, is treated in a gas cleaner box, and then is discharged from an exhaust port Vr2. Therefore, by appropriately switching the reaction gas selection valve RTI and the detection gas selection valve RT2, the inlet E
The hydrogen/argon gas from 1 can be passed through the thermal conductivity detector 1 before and after the reaction in the reactor 4 to measure the change in its thermal conductivity. Also, hydrogen/hydrogen sulfide/
The changes after treatment of the argon gas mixture in the reactor 4 can be measured with a mass spectrometer 7 and an ultraviolet spectrophotometer 8.
本発明の測定装置においては、熱伝導度検出器と分子ふ
るいトラップとを同じ恒温槽に入れても別異の恒温槽に
入れてもよい、恒温槽としては、使用温度範囲30℃〜
400℃を有するものを用い、測定時の温度を30〜8
0℃、そしてトラップ加熱再生時の温度を100〜40
0℃とし、制御は±2℃以内、好ましくは±1℃以内で
行なう。熱伝導度検出器は室温以上に設定することが望
ましく、一般には室温から100℃に設定する。分子ふ
るいトラップは室温以下に設定してもよく、低温はどト
ラップ効果がよくなる。In the measuring device of the present invention, the thermal conductivity detector and the molecular sieve trap may be placed in the same thermostatic oven or in different thermostatic ovens.The operating temperature range of the thermostatic oven is 30℃~
Using a device with a temperature of 400°C, the temperature at the time of measurement was set to 30 to 8
0℃, and the temperature during trap heating regeneration to 100-40℃.
The temperature is set at 0°C, and the temperature is controlled within ±2°C, preferably within ±1°C. The thermal conductivity detector is desirably set at room temperature or higher, and is generally set at room temperature to 100°C. The molecular sieve trap may be set at a temperature below room temperature, and the trap effect is better at lower temperatures.
背圧弁は、マスクローコントクーラ(第2図のMCI及
びMC2)の下流から背圧弁に至るまでの系内の圧力を
調整する。調整圧は、実施する反応の種類によって変化
するが、一般には、0.05〜3kgf/cm2である
。The back pressure valve adjusts the pressure within the system from downstream of the mask low control cooler (MCI and MC2 in FIG. 2) to the back pressure valve. The adjusted pressure varies depending on the type of reaction to be carried out, but is generally 0.05 to 3 kgf/cm2.
なお、第2図の測定装置を用いて昇温還元反応(TPR
)を行なう場合には、一般に、入口E1のみを用い、水
素ガス及びアルゴンガスを導入する。In addition, temperature programmed reduction reaction (TPR) was carried out using the measuring device shown in Figure 2.
), generally only inlet E1 is used to introduce hydrogen gas and argon gas.
また、昇温硫化反応(”rps)を行なう場合には、一
般に、入口E1から水素ガス及びアルゴンガスを、そし
て入口E2からは硫化水素ガス及びアルゴンガスを導入
する。Further, when performing a temperature programmed sulfurization reaction ("rps"), generally hydrogen gas and argon gas are introduced from the inlet E1, and hydrogen sulfide gas and argon gas are introduced from the inlet E2.
[実施例1
以下、実施例によって本発明を更に具体的に説明するが
、これは本発明の範囲を限定するものではない。[Example 1] Hereinafter, the present invention will be explained in more detail with reference to Examples, but these are not intended to limit the scope of the present invention.
以下の実施例においては、第2図に示す測定装置を用い
て昇温硫化反応(TPS)及び昇温還元反応(TPR)
を行なった。使用した機器及び設定条件等は以下のとお
りである。In the following examples, temperature-programmed sulfurization reaction (TPS) and temperature-programmed reduction reaction (TPR) were performed using the measuring device shown in FIG.
I did this. The equipment and setting conditions used are as follows.
(イ)入力圧制御弁■1及び■2:
大倉理研製のRP122
設定圧力0.05〜6kg (最高10kg)圧力変動
0.5%以内
(口〉背圧弁1及び■5:
大倉理研製のRV−236
設定圧力0〜Ikg/cm2(再現性±0.002kg
/cm2)
(ハ)マスフローコントローラMCI及びMC2:大倉
理研製のFvlF5041A83F0.4〜20Sα:
M(cc/m1n)(流量変動±0.25%)
(二〉検出器1:
熱伝導度検出器(大倉理研製802T)(ホ)トラップ
(へ〉
モレキュラーシーブSA
恒温槽の温度
使用温度範囲=30〜400℃
TPS/rPR測定時温度:30〜8o0Cトラップ加
熱再生時: ioo〜400’C例上
昇温還元反応(TPR)における熱伝導度検出器(TC
D:thermal conductivity de
tector)のベースライン安定性を調べた。熱伝導
度検出器1の電流量は約100mAであり、設定温度は
60’Cであった。流通ガスとしてはH2(65%)/
Arガスを20m1/min及び0.1kg/cm2で
用いた。トラップ(モレキュラーシーブ5A)の設定温
度は30℃であった。結果を第3図に示す。第3図がら
明らがなように、標準の測定条件(Attenuati
on−4)では、ベースラインは十分に安定であった。(a) Input pressure control valves ■1 and ■2: RP122 manufactured by Okura Riken Set pressure 0.05 to 6 kg (maximum 10 kg) Pressure fluctuation within 0.5% (port) Back pressure valves 1 and ■5: manufactured by Okura Riken RV-236 Setting pressure 0 to Ikg/cm2 (Reproducibility ±0.002kg
/cm2) (c) Mass flow controllers MCI and MC2: FvlF5041A83F0.4-20Sα manufactured by Okura Riken:
M (cc/m1n) (Flow rate variation ±0.25%) (2> Detector 1: Thermal conductivity detector (Okura Riken 802T) (e) Trap (e) Molecular sieve SA Temperature operating temperature range of constant temperature chamber =30~400°C Temperature during TPS/rPR measurement: 30~8o0C During trap heating regeneration: ioo~400'C Example Thermal conductivity detector (TC) in elevated temperature reduction reaction (TPR)
D: thermal conductivity
The baseline stability of the test vector was investigated. The amount of current of the thermal conductivity detector 1 was about 100 mA, and the set temperature was 60'C. The circulating gas is H2 (65%)/
Ar gas was used at 20 m1/min and 0.1 kg/cm2. The set temperature of the trap (molecular sieve 5A) was 30°C. The results are shown in Figure 3. As is not clear from Figure 3, standard measurement conditions (Attenuati
on-4), the baseline was sufficiently stable.
更に、4倍の高感度(Attenuation−1)に
しても十分に実用に耐えうるベースラインを示した。Furthermore, even when the sensitivity was increased to 4 times higher (Attenuation-1), a baseline sufficient for practical use was shown.
套り乙
例1と同じ条件で、五酸化バナジウム(V2O,)7.
63mgの昇温還元反応(TPR)を実施し、標準測定
条件(Attenuation=4)で得られた結果を
第4図に示す。第4図において曲線Tは温度変化を示し
、曲線Hは水素消費量を示す、五酸化バナジウム(V2
O,)7.63mgを三二酸化バナジウム(V2O,)
まで還元するのに必要な水素消費量は83.9μmol
であるが、安定したベースラインで感度よく測定するこ
とができた。Under the same conditions as Example 1, vanadium pentoxide (V2O,)7.
A temperature programmed reduction reaction (TPR) of 63 mg was carried out and the results obtained under standard measurement conditions (Attenuation=4) are shown in FIG. In Figure 4, curve T shows the temperature change, and curve H shows the hydrogen consumption, vanadium pentoxide (V2
7.63 mg of vanadium sesquioxide (V2O,)
The amount of hydrogen consumed to reduce the amount to 83.9 μmol
However, it was possible to measure with good sensitivity using a stable baseline.
透1
五酸化バナジウム(VO,)、三酸化マンガン(MoO
2)、及び三二酸化鉄(Fe20.)の昇温還元反応(
T1)R)を行ない、熱伝導度検出器のシグナル強度と
水素消費量との関係を調べた。結果を第5図に示す、広
い範囲で直線性が確認された。これは、熱伝導度検出器
の安定性を示すものである。Translucent 1 Vanadium pentoxide (VO, ), manganese trioxide (MoO
2), and temperature-programmed reduction reaction of iron sesquioxide (Fe20.) (
T1)R) was conducted to examine the relationship between the signal intensity of the thermal conductivity detector and the amount of hydrogen consumed. The results are shown in Figure 5, and linearity was confirmed over a wide range. This indicates the stability of the thermal conductivity detector.
透土
三二酸化鉄(α−Fe20.)30.14mgを用いて
、昇温硫化反応(TPS)を実施した。熱伝導度検出器
1の電流量は約100mAであり、設定温度は40”C
であった。流通ガスとしてはH2(65%〉h混合ガス
を6.7ml/m1niびO,1kg/cm2で、そし
てH3(5,5%〉h混合ガスを11.3ml/min
及びO,Ikg/am2で用いた。トラップ(モレキュ
ラーシーブ5A)の設定温度は40℃であった。水素ガ
スの消費は熱伝導度検出器で、そして硫化水素ガスの消
費は紫外分光光度計で各々独立に測定した。結果を第6
図に示す。第6図において、曲線Tは温度変化を示し、
曲線Hは水素消費量を示し、曲線Sは硫化水素消費量を
示す。Temperature-programmed sulfurization (TPS) was carried out using 30.14 mg of permeable iron sesquioxide (α-Fe20.). The current amount of thermal conductivity detector 1 is approximately 100mA, and the set temperature is 40"C.
Met. The circulating gases were H2 (65%>h mixed gas at 6.7ml/ml and O, 1kg/cm2), and H3 (5.5%>h mixed gas at 11.3ml/min).
and O, Ikg/am2. The set temperature of the trap (molecular sieve 5A) was 40°C. Hydrogen gas consumption was measured independently with a thermal conductivity detector, and hydrogen sulfide gas consumption was measured with an ultraviolet spectrophotometer. 6th result
As shown in the figure. In FIG. 6, the curve T shows the temperature change;
Curve H shows hydrogen consumption and curve S shows hydrogen sulfide consumption.
曲線Hの山形の部分は水素消費量が大であることを意味
し、そして曲線Sの谷形の部分は硫化水素消費量が大で
あることを意味する。第6図がら明らかなように、水素
ガス及び硫化水素ガスの消費を、熱伝導度検出器及び紫
外分光光度計で各々独立に測定することができる。The mountain-shaped portion of curve H means that hydrogen consumption is large, and the valley-shaped portion of curve S means that hydrogen sulfide consumption is large. As is clear from FIG. 6, the consumption of hydrogen gas and hydrogen sulfide gas can be measured independently using a thermal conductivity detector and an ultraviolet spectrophotometer.
[発明の効果1
本発明の昇温ガス反応測定装置では、従来の測定装置に
おける減圧弁及び流量計に加えて、更に背圧弁を設けで
あるので、大気圧変動や系内の急激な反応による圧力変
動の影響を実質的になくして安定したベースラインを得
ることができる。更に、系内のリークテストや高圧測定
を実施するのにも便利である。また、本発明の測定装置
では、熱伝導度検出器1及び分子ふるいトラップ9を恒
温槽11の中に設置しであるので、大気温度の変動や反
応ガス熱の影響を実質的に取り除くことができ、更にト
ラップの加熱再生も容易である。本発明の昇温ガス反応
測定装置は、触媒や無機酸化物の製造及び管理に有用で
ある。[Effect of the invention 1] The heated gas reaction measuring device of the present invention is equipped with a back pressure valve in addition to the pressure reducing valve and flow meter in the conventional measuring device, so that it is possible to prevent atmospheric pressure fluctuations or rapid reactions within the system. A stable baseline can be obtained by substantially eliminating the influence of pressure fluctuations. Furthermore, it is convenient for performing leak tests and high pressure measurements within the system. Furthermore, in the measuring device of the present invention, since the thermal conductivity detector 1 and the molecular sieve trap 9 are installed in the thermostatic chamber 11, the influence of atmospheric temperature fluctuations and reaction gas heat can be substantially eliminated. Furthermore, the trap can be easily regenerated by heating. The heated gas reaction measuring device of the present invention is useful for manufacturing and managing catalysts and inorganic oxides.
第1図は、本発明の昇温ガス反応測定装置の原理を模式
的に示す説明図、第2図は、本発明の測定装置の一実施
例の系統図、第3図は、本発明の測定装置で昇温還元反
応(TPR)を実施した場合のベースライン安定性を示
すグラフ、第4図は、本発明の測定装置で昇温還元反応
(TPR)を実施した場合の水素消費量を示すグラフ、
第5図は、本発明の測定装置で昇温還元反応(TPR)
を実施した場合の熱伝導度検出器のシグナル強度と水素
消費量との関係を示すグラフ、第6図は、本発明の測定
装置で昇温硫化反応(’rps)を実施した場合の水素
及び硫化水素の消費量を示すグラフ、そして第7図は、
従来の昇温ガス反応測定装置の原理を模式的に示す説明
図である。
1・・・熱伝導度検出器:3・・・流量制御装置:4・
・・反応器二9・・・分子ふるいトラップ:10・・・
背圧弁:11.・・・恒温槽。FIG. 1 is an explanatory diagram schematically showing the principle of the heated gas reaction measuring device of the present invention, FIG. 2 is a system diagram of an embodiment of the measuring device of the present invention, and FIG. Figure 4 is a graph showing the baseline stability when temperature programmed reduction reaction (TPR) is carried out with the measurement device, and shows the hydrogen consumption when temperature programmed reduction reaction (TPR) is carried out with the measurement device of the present invention. Graph showing,
Figure 5 shows temperature programmed reduction reaction (TPR) using the measuring device of the present invention.
Figure 6 is a graph showing the relationship between the signal intensity of the thermal conductivity detector and the amount of hydrogen consumed when the measurement device of the present invention is used to carry out the hydrogen and A graph showing the amount of hydrogen sulfide consumed, and Figure 7,
FIG. 2 is an explanatory diagram schematically showing the principle of a conventional heated gas reaction measuring device. 1... Thermal conductivity detector: 3... Flow rate control device: 4.
...Reactor 29...Molecular sieve trap: 10...
Back pressure valve: 11. ... Constant temperature bath.
Claims (1)
、その反応器の出口に連結された気体成分測定装置とを
有する昇温ガス反応測定装置において、前記の気体成分
測定装置を構成する熱伝導度検出器とその熱伝導度検出
器の上流に位置する分離器とを温度制御装置の制御下に
おくこと、及び前記気体成分測定装置の下流に背圧弁を
配置することを特徴とする、昇温ガス反応測定装置。(1) In a heated gas reaction measuring device having a reaction gas supply device, a reactor connected to the reactor, and a gas component measuring device connected to the outlet of the reactor, the gas component measuring device is configured as described above. A thermal conductivity detector and a separator located upstream of the thermal conductivity detector are placed under the control of a temperature control device, and a back pressure valve is disposed downstream of the gas component measuring device. A heated gas reaction measuring device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1196763A JP2503276B2 (en) | 1989-07-31 | 1989-07-31 | Temperature rising gas reaction measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1196763A JP2503276B2 (en) | 1989-07-31 | 1989-07-31 | Temperature rising gas reaction measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0361844A true JPH0361844A (en) | 1991-03-18 |
| JP2503276B2 JP2503276B2 (en) | 1996-06-05 |
Family
ID=16363217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1196763A Expired - Lifetime JP2503276B2 (en) | 1989-07-31 | 1989-07-31 | Temperature rising gas reaction measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2503276B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116679072A (en) * | 2023-06-12 | 2023-09-01 | 南开大学 | A method and kit for detecting allergen β-lactoglobulin in milk |
| WO2024181221A1 (en) * | 2023-03-01 | 2024-09-06 | 株式会社堀場製作所 | Elemental analysis device and elemental analysis method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4744200A (en) * | 1971-05-11 | 1972-12-21 | ||
| JPS5597643U (en) * | 1978-12-27 | 1980-07-07 | ||
| JPS5973044A (en) * | 1982-10-21 | 1984-04-25 | Honma Riken Kogyo Kk | Automatic pressure adjusting type small reaction apparatus |
| JPS59116109A (en) * | 1982-12-24 | 1984-07-04 | Toshiba Corp | Method for purifying gaseous argon |
| JPS6011059U (en) * | 1983-06-30 | 1985-01-25 | 株式会社島津製作所 | thermal conductivity detector |
-
1989
- 1989-07-31 JP JP1196763A patent/JP2503276B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4744200A (en) * | 1971-05-11 | 1972-12-21 | ||
| JPS5597643U (en) * | 1978-12-27 | 1980-07-07 | ||
| JPS5973044A (en) * | 1982-10-21 | 1984-04-25 | Honma Riken Kogyo Kk | Automatic pressure adjusting type small reaction apparatus |
| JPS59116109A (en) * | 1982-12-24 | 1984-07-04 | Toshiba Corp | Method for purifying gaseous argon |
| JPS6011059U (en) * | 1983-06-30 | 1985-01-25 | 株式会社島津製作所 | thermal conductivity detector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024181221A1 (en) * | 2023-03-01 | 2024-09-06 | 株式会社堀場製作所 | Elemental analysis device and elemental analysis method |
| CN116679072A (en) * | 2023-06-12 | 2023-09-01 | 南开大学 | A method and kit for detecting allergen β-lactoglobulin in milk |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2503276B2 (en) | 1996-06-05 |
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