JPH03618B2 - - Google Patents
Info
- Publication number
- JPH03618B2 JPH03618B2 JP2990183A JP2990183A JPH03618B2 JP H03618 B2 JPH03618 B2 JP H03618B2 JP 2990183 A JP2990183 A JP 2990183A JP 2990183 A JP2990183 A JP 2990183A JP H03618 B2 JPH03618 B2 JP H03618B2
- Authority
- JP
- Japan
- Prior art keywords
- coating
- photosensitive
- coating film
- solution
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000576 coating method Methods 0.000 claims description 47
- 239000011248 coating agent Substances 0.000 claims description 46
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims description 28
- 150000001875 compounds Chemical class 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 18
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 claims description 7
- 239000000243 solution Substances 0.000 description 29
- 239000002904 solvent Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 12
- 239000000126 substance Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 8
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- 238000012360 testing method Methods 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000001914 filtration Methods 0.000 description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 229930192627 Naphthoquinone Natural products 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- WXNRYSGJLQFHBR-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O WXNRYSGJLQFHBR-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical group CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 2
- 229940074391 gallic acid Drugs 0.000 description 2
- 235000004515 gallic acid Nutrition 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 150000002791 naphthoquinones Chemical class 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229940079877 pyrogallol Drugs 0.000 description 2
- WOAHJDHKFWSLKE-UHFFFAOYSA-N 1,2-benzoquinone Chemical compound O=C1C=CC=CC1=O WOAHJDHKFWSLKE-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical compound CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 1
- KLIDCXVFHGNTTM-UHFFFAOYSA-N 2,6-dimethoxyphenol Chemical compound COC1=CC=CC(OC)=C1O KLIDCXVFHGNTTM-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- KCXKTZMTGFSCCI-UHFFFAOYSA-N [N-]=[N+]=[N-].[N-]=[N+]=[N-].ClS(Cl)(=O)=O Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].ClS(Cl)(=O)=O KCXKTZMTGFSCCI-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- ATGUVEKSASEFFO-UHFFFAOYSA-N p-aminodiphenylamine Chemical compound C1=CC(N)=CC=C1NC1=CC=CC=C1 ATGUVEKSASEFFO-UHFFFAOYSA-N 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
Description
【発明の詳細な説明】
本発明は、保存安定性及び微細パターン形成性
に優れたポジ型感光性塗膜形成用組成物に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a positive-working photosensitive coating composition having excellent storage stability and fine pattern forming properties.
一般に、ホトレジストを利用する微細パターン
の形成は、感光性材料を含有する溶液を基板上
に、例えばロールコート法、フローコート法、ス
ピンコート法、デイツプコート法、スプレーコー
ト法あるいはドクターコート法などの塗布方法に
より塗布し、溶剤を揮散させて感光層を形成した
のち、所望のマスクパターンを介して活性光を照
射し、照射部と非照射部との間に生じた耐性の差
を利用して、照射部又は非照射部のいずれかを選
択的に除去することにより行われている。この場
合、照射部のみが選択的に除去されるものはポジ
型であり、それとは逆に非照射部が選択的に除去
されるものはネガ型に分類されるが、本発明は、
前者のポジ型に関し、特に現像液を用いる湿式現
像に好適な感光性材料含有塗布液の貯蔵安定性の
改良に係るものである。 Generally, the formation of fine patterns using photoresists involves applying a solution containing a photosensitive material onto a substrate, such as by roll coating, flow coating, spin coating, dip coating, spray coating, or doctor coating. After applying the photosensitive layer by vaporizing the solvent and irradiating it with active light through a desired mask pattern, taking advantage of the difference in resistance between the irradiated and non-irradiated areas, This is done by selectively removing either the irradiated area or the non-irradiated area. In this case, those in which only the irradiated areas are selectively removed are classified as positive types, and on the contrary, those in which non-irradiated areas are selectively removed are classified as negative types.
Regarding the former positive type, this invention particularly relates to improving the storage stability of a coating solution containing a photosensitive material suitable for wet development using a developer.
本発明のポジ型感光性材料含有塗布液は、感光
性化合物、塗膜形成材料及びこれらを溶解する溶
剤から構成される溶液であつて、そのポジ型の感
光性を与える感光性化合物としては、例えばオル
トベンゾキノンジアジド、オルトナフトキノンジ
アジド、オルトアントラキノンジアジド基などを
有するキノンジアジド基含有化合物類が挙げられ
る。これらのキノンジアジド化合物類は、活性光
の照射によつて容易に光分解してカルボン酸を生
成し、アルカリ性液に可溶の物質に変化するの
で、この性質を利用し、ポジ型用感光性化合物と
して好適に使用されている。しかし、これらの基
は、安定性が極めて悪いので、その安定化のため
に、例えば、ナフトキノン−(1,2)−ジアジド
−(2)−5−スルホナートのように、フエノール性
の水酸基をエステル化するなどの手段が採用され
ている。ところが、感光性化合物をこのようにし
て安定化することは工業的に不利である上に、感
光性化合物のもつ望ましい性質がそこなわれるの
を免れない。 The positive-working photosensitive material-containing coating solution of the present invention is a solution composed of a photosensitive compound, a coating film-forming material, and a solvent for dissolving these, and the photosensitive compound that provides positive photosensitivity includes: Examples include quinonediazide group-containing compounds having orthobenzoquinonediazide, orthonaphthoquinonediazide, orthoanthraquinonediazide groups, and the like. These quinonediazide compounds are easily photodecomposed by irradiation with actinic light to produce carboxylic acid, which changes into a substance soluble in alkaline liquid.Using this property, we can develop photosensitive compounds for positive working. It is suitably used as However, these groups have extremely poor stability, so in order to stabilize them, the phenolic hydroxyl group is esterified, such as naphthoquinone-(1,2)-diazide-(2)-5-sulfonate. Measures such as digitization are being adopted. However, stabilizing photosensitive compounds in this manner is not only industrially disadvantageous, but also inevitably results in the loss of desirable properties of the photosensitive compounds.
他方、上記のようなポジ型感光性化合物を溶剤
に溶解して塗布液を調製した場合、その溶液が保
存の間に分解して光感度が低下したり、あるいは
いつたん溶解した感光性化合物が再結晶化して析
出し、溶液の均一性をそこなうという欠点があつ
た。溶液の安定性は、溶質と溶剤との相互関係が
一つの重要な要因をなすものであるが、溶剤の溶
質溶解力が大きくかつ溶質が長期安定に保たれる
ことが必要である。そしてポジ型感光性材料含有
塗布液の場合には、感光性化合物及び塗膜形成材
料の両者に対して強い溶解力を有し、その濃度に
関係なく均一な溶液を形成し、均一かつ平滑な塗
膜を提供しうることが重要であり、それぞれの溶
質の種類に応じて好適な溶剤が選択される。ポジ
型感光性材料含有塗布液用溶剤としては、極めて
広い範囲の有機溶剤を使用できることが知られて
いるが、実用的にはシクロヘキサノン、エチレン
グリコールモノエチルエーテルアセテートが好ま
しい溶剤として用いられている。しかしながら、
シクロヘキサノンを溶剤とする塗布液において
は、その保存中に感光性化合物が徐々に分解して
感光性が低下するし、また、エチレングリコール
モノエチルエーテルアセテート溶剤は、その溶液
の長期保存の間に感光性化合物が再結晶化する欠
点が解消できず、いずれも十分に満足しうるもの
とはいえなかつた。したがつて、当該技術分野で
は、長期の保存後にも感光性が低下せず、かつ均
一で平滑な塗膜を形成しうる安定なポジ型感光性
材料含有溶液が強く要望されていた。 On the other hand, when a coating solution is prepared by dissolving the above-mentioned positive photosensitive compound in a solvent, the solution may decompose during storage, resulting in a decrease in photosensitivity, or the dissolved photosensitive compound may deteriorate over time. It had the disadvantage that it recrystallized and precipitated, impairing the uniformity of the solution. One important factor in the stability of a solution is the interaction between the solute and the solvent, and it is necessary that the solvent has a large solute-dissolving power and that the solute is kept stable for a long period of time. In the case of a coating solution containing a positive photosensitive material, it has a strong dissolving power for both the photosensitive compound and the coating film forming material, and forms a uniform solution regardless of its concentration, resulting in a uniform and smooth coating. It is important to be able to provide a coating film, and a suitable solvent is selected depending on the type of each solute. It is known that a very wide range of organic solvents can be used as a solvent for a coating solution containing a positive photosensitive material, but cyclohexanone and ethylene glycol monoethyl ether acetate are practically used as preferred solvents. however,
In a coating solution using cyclohexanone as a solvent, the photosensitive compound gradually decomposes during storage, resulting in a decrease in photosensitivity; However, the drawback of recrystallization of the chemical compound could not be overcome, and none of them could be said to be fully satisfactory. Therefore, there has been a strong demand in this technical field for a stable positive-working photosensitive material-containing solution that does not reduce photosensitivity even after long-term storage and can form a uniform and smooth coating film.
本発明者らは、従来のポジ型感光性塗膜用塗布
液の上記のような欠点を解消し、極めて安定な塗
布液を提供することを目的として鋭意研究を重ね
た結果、シクロペンタノンを溶剤として用いるこ
とによりその目的を達成しうることを見出し、本
発明をなすに至つた。 The inventors of the present invention have conducted extensive research with the aim of solving the above-mentioned drawbacks of conventional coating solutions for positive photosensitive coatings and providing an extremely stable coating solution, and as a result, they have developed cyclopentanone. The inventors have discovered that the object can be achieved by using it as a solvent, leading to the present invention.
すなわち、本発明は、キノンジアジド基を有す
るポジ型感光性化合物及び塗膜形成材料をシクロ
ペンタノンに溶解して成るポジ型感光性塗膜形成
用組成物を提供するものである。 That is, the present invention provides a composition for forming a positive photosensitive coating film, which is prepared by dissolving a positive photosensitive compound having a quinonediazide group and a coating film forming material in cyclopentanone.
本発明の組成物に用いられるキノンジアジド基
を含有するポジ型感光性化合物としては、例えば
オルトベンゾキノンジアジド、オルトナフトキノ
ンジアジド、オルトアントラキノンジアジド及び
アジド基を有する化合物、例えばオルトナフトキ
ノンジアジドスルホン酸エステルのような核置換
誘導体類を挙げることができ、またオルトキノン
ジアジドスルホニルクロリドと水酸基又はアミノ
基をもつ化合物、例えばフエノール、p−メトキ
シフエノール、ジメチルフエノール、ヒドロキノ
ン、ビスフエノールA、ナフトール、ピロカテコ
ール、ピロガロール、ピロガロールモノメチルエ
ーテル、ピロガロール−1,3−ジメチルエーテ
ル、没食子酸、水酸基を一部残し、エステル化又
はエーテル化された没食子酸、アニリン、p−ア
ミノジフエニルアミン、フエノール樹脂などとの
反応生成物類も包含される。これらの感光性化合
物は、通常単独で用いられるが、2種以上を併用
することもできる。 Examples of the positive photosensitive compound containing a quinonediazide group used in the composition of the present invention include orthobenzoquinonediazide, orthonaphthoquinonediazide, orthoanthraquinonediazide, and compounds containing an azide group, such as orthonaphthoquinonediazide sulfonic acid ester. Nuclear-substituted derivatives can be mentioned, and compounds having orthoquinone diazide sulfonyl chloride and a hydroxyl group or an amino group, such as phenol, p-methoxyphenol, dimethylphenol, hydroquinone, bisphenol A, naphthol, pyrocatechol, pyrogallol, pyrogallol monomethyl Also included are reaction products with ether, pyrogallol-1,3-dimethyl ether, gallic acid, esterified or etherified gallic acid with some hydroxyl groups left, aniline, p-aminodiphenylamine, phenolic resin, etc. Ru. These photosensitive compounds are usually used alone, but two or more types can also be used in combination.
また、本発明の組成物に用いられる塗膜形成材
料としては、アルカリ可溶性の樹脂類が好まし
く、例えばフエノール又はクレゾールなどとアル
デヒド類とを縮合して製造されるノボラツク樹
脂、ポリビニルアルコール、ポリビニルアルキル
エーテル、スチレンとアクリル酸との共重合体、
メタクリル酸とメタクリル酸アルキルエステルと
の共重合体、ヒドロキシスチレンの重合体類、ポ
リビニルヒドロキシベンゾエート、ポリビニルヒ
ドロキシベンザールなどを挙げることができる。
これらも単独又は2種以上を組合せ使用できる。 Furthermore, as the coating film-forming material used in the composition of the present invention, alkali-soluble resins are preferable, such as novolac resins produced by condensing phenol or cresol with aldehydes, polyvinyl alcohol, polyvinyl alkyl ether, etc. , copolymer of styrene and acrylic acid,
Examples include copolymers of methacrylic acid and methacrylic acid alkyl esters, hydroxystyrene polymers, polyvinylhydroxybenzoate, and polyvinylhydroxybenzal.
These can also be used alone or in combination of two or more.
上記感光性化合物と塗膜形成材料との使用割合
は、通常、重量比で1:2〜1:10の範囲であ
る。この場合は、ポジ型感光性化合物が、例えば
フエノール樹脂のような塗膜形成成分を含む場合
には、ポジ型感光性化合物中の塗膜形成成分を該
塗膜形成材料とみなして換算すればよい。塗膜形
成材料があまり多すぎると得られる画像のマスク
パターンの忠実性の劣化や転写性の低下をもたら
すので好ましくないし、あまり少なすぎると形成
される塗膜の強度及び均一性の低下や解像力の低
下をもたらすので好ましくない。一般に、好まし
い感光性化合物対塗膜形成材料の配合割合は重量
比で1:2.5〜1:5.5の範囲である。 The ratio of the photosensitive compound to the coating film forming material used is usually in the range of 1:2 to 1:10 by weight. In this case, if the positive photosensitive compound contains a coating film forming component such as a phenol resin, the coating film forming component in the positive photosensitive compound is regarded as the coating film forming material and the conversion is performed. good. Too much coating film-forming material is undesirable because it will cause deterioration of the fidelity of the mask pattern of the resulting image and a reduction in transferability, while too little amount will cause a decrease in the strength and uniformity of the formed coating film and a decrease in resolution. This is not preferable as it causes deterioration. Generally, the preferred ratio of photosensitive compound to film-forming material is in the range of 1:2.5 to 1:5.5 by weight.
本発明に用いる溶剤は、従来ポジ型感光性塗膜
形成用溶液の溶剤として用いられたことのないも
のである。その使用量は、塗布基板に適用して均
一な薄層を形成するポジ型感光性塗膜形成用溶液
を提供できる範囲であれば特に制限はないが、通
常、固形分すなわち、ポジ型感光性化合物及び塗
膜形成材料が3〜50重量%の範囲となる濃度の溶
液組成物を与えるような量が用いられる。 The solvent used in the present invention has never been used as a solvent for a solution for forming a positive photosensitive coating film. The amount used is not particularly limited as long as it can provide a positive photosensitive coating forming solution that forms a uniform thin layer when applied to the coated substrate, but usually the solid content, that is, the positive photosensitive Amounts are used to provide a solution composition with a concentration of compound and film-forming material ranging from 3 to 50% by weight.
また、本発明の溶液組成物には、例えば増感
剤、他の付加的樹脂、可塑剤、安定剤、あるいは
形成像を一層可視的にするための着色料、その他
の通常、当該技術分野で慣用されている各種添加
剤を含有させることができる。 The solution compositions of the present invention may also contain, for example, sensitizers, other additional resins, plasticizers, stabilizers, or colorants to make the formed image more visible, as well as other materials commonly known in the art. Various commonly used additives can be included.
ハードマスクを製造するときのホトレジストの
ように高解像力が要望されるときには、ホトレジ
ストの膜厚を0.2μm程度にするのが好ましいが、
本発明の組成物を用いれば、固形分濃度を3〜5
重量%にして3000rpmの回転速度でスピンコート
すればよい。また、段差の大きい基板に塗布する
必要があるときには、従来方法においては、凹部
を埋めたのちにホトレジストを塗布する、いわゆ
る多層レジスト法がとられていたが、本発明の組
成物を用いれば、固形分を40〜50重量%の高濃度
にしても粘度上昇がほとんどないため、スピンコ
ートが可能で、段差のある基板に対しても、予め
凹部を埋めることなく、直接段差のある基板にス
ピンコートするだけで3μm程度の厚膜を得ること
ができ、段差のある基板で高解像度のある微細パ
ターンを形成することができる。 When high resolution is required, such as when using photoresist for manufacturing hard masks, it is preferable to set the photoresist film thickness to about 0.2 μm.
If the composition of the present invention is used, the solid content concentration can be reduced to 3 to 5.
Spin coating may be performed at a rotation speed of 3000 rpm in terms of weight %. Furthermore, when it is necessary to coat a substrate with large differences in level, the conventional method uses a so-called multilayer resist method, in which the recesses are filled and then a photoresist is applied, but if the composition of the present invention is used, There is almost no increase in viscosity even when the solid content is at a high concentration of 40 to 50% by weight, so spin coating is possible, and it can be applied directly to substrates with steps without filling in the recesses in advance. It is possible to obtain a film as thick as 3 μm just by coating it, and it is possible to form fine patterns with high resolution on a substrate with steps.
本発明の組成物の好適な使用方法について1例
を示すと、まず、例えばシリコンウエハーのよう
な支持体上に、キノンジアジド基含有感光性化合
物及び塗膜形成材料をシクロペンタノンに溶解し
て調製したポジ型感光性塗膜形成用組成物をスピ
ン・コーター等によつて塗布し、これを脱溶剤し
て乾燥した感光層を形成させる。次いで紫外線を
発光する光源、例えば低圧水銀灯、高圧水銀灯、
超高圧水銀灯、アーク灯、キセノンランプなどを
用い、所要のマスタパターンを介して露光する
か、あるいは電子線を走査しながら照射する。次
にこれを現像液、例えば1〜2%水酸化ナトリウ
ム水溶液のような弱アルカリ性水溶液に浸すと、
露光によつて可溶性化した部分が選択的に溶解除
去されて、マスクパターンに忠実なポジ型の画像
が得られる。 To give one example of a preferred method of using the composition of the present invention, first, a quinonediazide group-containing photosensitive compound and a coating film-forming material are dissolved in cyclopentanone on a support such as a silicon wafer. The positive-working photosensitive coating film-forming composition prepared above is applied using a spin coater or the like, and the solvent is removed to form a dry photosensitive layer. Next, a light source that emits ultraviolet light, such as a low-pressure mercury lamp, a high-pressure mercury lamp,
Using an ultra-high pressure mercury lamp, an arc lamp, a xenon lamp, etc., exposure is performed through a required master pattern, or irradiation is performed while scanning an electron beam. Next, when this is immersed in a developer, for example a weakly alkaline aqueous solution such as a 1-2% aqueous sodium hydroxide solution,
The portions made solubilized by exposure are selectively dissolved and removed, resulting in a positive image faithful to the mask pattern.
本発明のポジ型感光性塗膜形成用溶液組成物
は、従来のものに比べて、安定性が顕著に優れ、
しかもシクロペンタノンは、ジアジド基に対する
分解作用あるいは分解促進力が極めて弱いので、
キノンジアジド基含有化合物の感光特性が低下せ
ず、従来のものに比べ、長期保存後にも高い解像
力のポジ型感光性塗膜を提供することができる。
また本発明の組成物は、溶剤シクロペンタノンの
蒸発速度が非常に大きいので、基板上にスピン・
オンし回転させて塗膜を得るのに、従来のものに
比べて約1/3の粘度の低濃度組成物で適用でき、
そのため同様な基板上に形成させる場合の消費さ
れる組成物の量が従来の約半分で済むという効果
を有する。また段差をもつ基板上に塗布する場
合、ステツプ部分のカバーリングに問題のあつた
今までのものに比べ、本発明の組成物は、シクロ
ペンタノンの揮発速度が大きく、塗布時の乾燥が
速いので、被覆性のよい膜が得られるという利点
をもつ。 The positive photosensitive coating film forming solution composition of the present invention has significantly superior stability compared to conventional compositions,
Moreover, cyclopentanone has an extremely weak decomposition effect or decomposition promoting power on diazide groups, so
The photosensitive properties of the quinonediazide group-containing compound do not deteriorate, and it is possible to provide a positive photosensitive coating film with higher resolution even after long-term storage than conventional ones.
Furthermore, since the composition of the present invention has a very high evaporation rate of the solvent cyclopentanone, it can be spun onto a substrate.
It can be applied with a low-concentration composition with a viscosity about 1/3 of that of conventional products when turned on and rotated to obtain a coating film.
Therefore, the amount of the composition consumed when forming on a similar substrate is approximately half that of the conventional method. Furthermore, when coating onto a substrate with steps, the composition of the present invention has a higher volatilization rate of cyclopentanone and dries faster during coating than conventional compositions that have had problems covering the step portion. Therefore, it has the advantage that a film with good coverage can be obtained.
次に実施例及び比較例により本発明を、さらに
詳細に説明する。 Next, the present invention will be explained in more detail with reference to Examples and Comparative Examples.
実施例1及び比較例1
シクロペンタノン75gに2,3,4−トリヒド
ロキシベンゾフエノン1molとナフトキノン−
(1,2)−ジアジド−(2)−5−スルホニルクロリ
ド3molとの反応物5g及びフエノールノボラツ
ク樹脂20gとを溶解し、これを0.45μmのメンブ
ランフイルターでろ過し、ポジ型感光性塗布液を
調製した。このものを25℃の恒温に保ち、ゲル状
物の発生の経時試験を行つた。経時試験における
ゲル状物の確認法は、3インチ径のシリコン基板
に、市販のスピンコーター装置を用い、3000rpm
の回転速度で、上記ろ過調製された塗布液を塗布
し、スポツトライトを照射して観察することによ
りゲル状物の多数の形成を確認する方法であつ
て、ろ過後の塗布液の経時的変質と安定性を容易
に判断することができる。Example 1 and Comparative Example 1 75 g of cyclopentanone, 1 mol of 2,3,4-trihydroxybenzophenone and naphthoquinone
5 g of the reaction product with 3 mol of (1,2)-diazide-(2)-5-sulfonyl chloride and 20 g of phenol novolac resin were dissolved, filtered through a 0.45 μm membrane filter, and a positive photosensitive coating solution was prepared. was prepared. This product was kept at a constant temperature of 25°C, and a time-lapse test was conducted to determine the generation of gel-like substances. The method for confirming gel-like substances in the aging test is to coat a 3-inch diameter silicon substrate with a commercially available spin coater at 3000 rpm.
This method involves applying the filtered coating solution at a rotational speed of and stability can be easily judged.
この経時試験の結果は、ろ過後2400時間経過し
てもゲル状物は確認できず、全く安定な塗布液で
あることが認められた。 As a result of this time-lapse test, no gel-like substance was observed even after 2400 hours had passed after filtration, and it was confirmed that the coating liquid was completely stable.
これに対し、溶剤としてシクロペンタノンに代
えて、従来用いられているエチレングリコールモ
ノエチルエーテルアセテートを用いたほかは全く
同様にして調製した塗布液について同様に試験し
た結果、この液はろ過後約120時間で多数のゲル
状物が認められた。 On the other hand, as a result of conducting the same test on a coating solution prepared in exactly the same manner except that the conventionally used ethylene glycol monoethyl ether acetate was used instead of cyclopentanone as a solvent, it was found that after filtration, this solution was approximately Many gel-like substances were observed after 120 hours.
比較例 2
エチレングリコールモノエチルエーテルアセテ
ート75gに2,2′,4,4′−テトラヒドロキシベ
ンゾフエノン1molとナフトキノン−(1,2)−
ジアジド−(2)−5−スルホン酸クロライド3mol
との反応物5g及びフエノールノボラツク樹脂20
gとを溶解し、ろ過して前記の経時試験を行つた
ところ、24時間でゲル状物の発生を認めた。Comparative Example 2 75 g of ethylene glycol monoethyl ether acetate, 1 mol of 2,2',4,4'-tetrahydroxybenzophenone and naphthoquinone-(1,2)-
Diazide-(2)-5-sulfonic acid chloride 3 mol
5 g of the reaction product with and 20 g of phenol novolac resin
When the above-mentioned time-lapse test was performed after dissolving and filtering g, it was observed that a gel-like substance was generated in 24 hours.
実施例 2
比較例2のエチレングリコールモノエチルエー
テルアセテートの代わりにシクロペンタノン75g
を用いた以外は比較例2と同様にして溶液を調製
し、経時試験を行つた結果、ゲル状物の発生は
1200時間まで認められなかつた。Example 2 75g of cyclopentanone instead of ethylene glycol monoethyl ether acetate in Comparative Example 2
A solution was prepared in the same manner as in Comparative Example 2, except for using
It was not recognized until 1200 hours.
比較例 3
エチレングリコールモノエチルエーテルアセテ
ート75gに2,2′,4,4′−テトラヒドロキシベ
ンゾフエノン1molとナフトキノン−(1,2)−
ジアジド−(2)−5−スルホニルクロリド4molと
の反応物5g及びフエノールノボラツク樹脂20g
とを溶解し、ろ過した後、経時試験を行つた結
果、24時間でゲル状物の発生を認めた。Comparative Example 3 75 g of ethylene glycol monoethyl ether acetate, 1 mol of 2,2',4,4'-tetrahydroxybenzophenone and naphthoquinone-(1,2)-
5 g of reaction product with 4 mol of diazide-(2)-5-sulfonyl chloride and 20 g of phenol novolak resin
After dissolving and filtering, a time-lapse test was performed, and as a result, a gel-like substance was observed to form within 24 hours.
実施例 3
比較例3のエチレングリコールモノエチルエー
テルアセテートの代りにシクロペンタノンを使用
して同様の操作を行つた結果、170時間までゲル
状物は認められなかつた。Example 3 A similar operation was carried out using cyclopentanone in place of ethylene glycol monoethyl ether acetate in Comparative Example 3, and as a result, no gel-like substance was observed up to 170 hours.
比較例 4
シクロヘキサノン75gに2,3,4−トリヒド
ロキシベンゾフエノン1molとナフトキノン−
(1,2)−ジアジド−(2)−5−スルホン酸クロラ
イド3molとの反応物5g及びフエノールノボラ
ツク樹脂20gを溶解し、0.45μmのメンブランフ
イルターを通して、ポジ型感光性塗布液を調製し
た。このものを比較例1と同様に経時試験を行つ
た結果2400時間まで、ゲル状物は認められなかつ
た。Comparative Example 4 75 g of cyclohexanone, 1 mol of 2,3,4-trihydroxybenzophenone and naphthoquinone
5 g of the reaction product with 3 mol of (1,2)-diazide-(2)-5-sulfonic acid chloride and 20 g of phenol novolac resin were dissolved and passed through a 0.45 μm membrane filter to prepare a positive photosensitive coating solution. This product was subjected to a time test in the same manner as in Comparative Example 1, and as a result, no gel-like substance was observed up to 2400 hours.
また、この塗布液を、メチルセロソルブにて希
釈し、石英セル容器を用い、日立分光光度計323
型で400nmの波長の吸光度の変化を測定した結
果、経時とともに小さくなつていることから、ジ
アジド基の分解が確認できた。 In addition, this coating solution was diluted with methyl cellosolve, and using a quartz cell container, a Hitachi spectrophotometer 323 was used.
As a result of measuring the change in absorbance at a wavelength of 400 nm with the mold, it became smaller over time, confirming the decomposition of the diazide group.
実施例 4
比較例4のシクロヘキサノンの代わりにシクロ
ペンタノンを用いて、同様に吸光度の変化を測定
した結果、約2000時間後における400nmの波長の
吸光度の変化がみられず、従つてジアジド基の変
化がほとんどないことが分つた。Example 4 As a result of measuring the change in absorbance in the same manner using cyclopentanone instead of cyclohexanone in Comparative Example 4, no change in absorbance at a wavelength of 400 nm was observed after about 2000 hours, and therefore, it was found that the change in absorbance at a wavelength of 400 nm was not observed after about 2000 hours. It was found that there were almost no changes.
比較例 5
エチレングリコールモノエチルエーテルアセテ
ート75gに2,3,4−トリヒドロキシベンゾフ
エノン1molとナフトキノン−(1,2)−ジアジ
ド−2−(5)−スルホン酸クロライド2molとの反
応物5g及びフエノールノボラツク樹脂20gとを
溶解し、これを0.45μmのメンブランフイルター
でろ過し、ポジ型感光性塗布液を調製した。この
ものを、表面に約20000Åの厚さのライン・アン
ド・スペース・パターンから成るSiO2層をもつ
シリコンウエハー上にスピンコーターを用い
3000rpmの回転速度で塗布し、85℃の熱循環乾燥
器で30分間乾燥し、SEM断面写真を観察した結
果、SiO2上面とSi面での膜厚差が大きく、また
ステツプの部分の膜厚がうすく、カバーリングが
乏しかつた。Comparative Example 5 75 g of ethylene glycol monoethyl ether acetate, 5 g of a reaction product of 1 mol of 2,3,4-trihydroxybenzophenone and 2 mol of naphthoquinone-(1,2)-diazide-2-(5)-sulfonic acid chloride, and A positive photosensitive coating solution was prepared by dissolving 20 g of phenol novolac resin and filtering it through a 0.45 μm membrane filter. This material was coated using a spin coater on a silicon wafer with a SiO 2 layer consisting of a line and space pattern approximately 20,000 Å thick on the surface.
The coating was applied at a rotation speed of 3000 rpm, dried for 30 minutes in a thermal circulation dryer at 85°C, and the SEM cross-sectional photographs were observed. As a result, there was a large difference in the film thickness between the SiO 2 top surface and the Si surface, and the film thickness at the step area was large. It was thin and had poor coverage.
実施例 5
比較例5のエチレングリコールモノエチルエー
テルアセテートの代わりにシクロペンタノン75g
を用いて同様の操作を行つた所、SiO2面とSi面
の膜厚差が少なく、ステツプの部分のカバーリン
グも良いことが確認された。Example 5 75 g of cyclopentanone was used instead of ethylene glycol monoethyl ether acetate in Comparative Example 5.
When similar operations were carried out using , it was confirmed that there was little difference in film thickness between the SiO 2 surface and the Si surface, and that the covering of the step area was good.
Claims (1)
物及び塗膜形成材料をシクロペンタノンに溶解し
て成るポジ型感光性塗膜形成用組成物。 2 シクロペンタノンに溶解したポジ型感光性化
合物及び塗膜形成材料の合計濃度が3〜50重量%
である特許請求の範囲第1項記載の組成物。[Scope of Claims] 1. A composition for forming a positive photosensitive coating film, which is obtained by dissolving a positive photosensitive compound having a quinonediazide group and a coating film forming material in cyclopentanone. 2. The total concentration of the positive photosensitive compound and coating film forming material dissolved in cyclopentanone is 3 to 50% by weight.
The composition according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2990183A JPS59155838A (en) | 1983-02-24 | 1983-02-24 | Coating composition for forming positive type photosensitive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2990183A JPS59155838A (en) | 1983-02-24 | 1983-02-24 | Coating composition for forming positive type photosensitive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59155838A JPS59155838A (en) | 1984-09-05 |
| JPH03618B2 true JPH03618B2 (en) | 1991-01-08 |
Family
ID=12288877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2990183A Granted JPS59155838A (en) | 1983-02-24 | 1983-02-24 | Coating composition for forming positive type photosensitive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59155838A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62123444A (en) | 1985-08-07 | 1987-06-04 | Japan Synthetic Rubber Co Ltd | Radiation sensitive resinous composition |
| JPH0721626B2 (en) * | 1985-08-10 | 1995-03-08 | 日本合成ゴム株式会社 | Resist composition for semiconductor fine processing |
-
1983
- 1983-02-24 JP JP2990183A patent/JPS59155838A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59155838A (en) | 1984-09-05 |
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