JPH0362497U - - Google Patents
Info
- Publication number
- JPH0362497U JPH0362497U JP1989123671U JP12367189U JPH0362497U JP H0362497 U JPH0362497 U JP H0362497U JP 1989123671 U JP1989123671 U JP 1989123671U JP 12367189 U JP12367189 U JP 12367189U JP H0362497 U JPH0362497 U JP H0362497U
- Authority
- JP
- Japan
- Prior art keywords
- switching element
- drive circuit
- light emitting
- storage capacitor
- response
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Description
第1図は本考案の一実施例に係るEL駆動回路
図、第2図は本実施例におけるスイツチング素子
の断面説明図、第3図は本実施例をマトリツクス
型EL表示装置に応用した場合の駆動回路図、第
4図は従来のEL駆動回路図、第5図はEL発光
素子の輝度とEL発光素子の駆動電源周波数との
関係を示す図、第6図はEL発光素子の輝度とE
L発光素子を駆動するスイツチング素子のゲート
電圧との関係を示す図、第7図a,b,cは、E
L発光素子の発光動作を説明するためのタイミン
グ図、第8図は第1のスイツチング素子のドレイ
ン電流−ゲート電圧特性を示す図である。
Q1……第1のスイツチング素子、Q2……第
2のスイツチング素子、CEL……EL発光素子
、CS……蓄積用コンデンサ、RD……放電抵抗
、Va……EL駆動電源、2……ゲート電極、4
……半導体層(アモルフアスシリコン)、6a…
…ドレイン電極、6b……ソース電極。
Fig. 1 is an EL drive circuit diagram according to an embodiment of the present invention, Fig. 2 is a cross-sectional explanatory diagram of a switching element in this embodiment, and Fig. 3 is an EL drive circuit diagram when this embodiment is applied to a matrix type EL display device. 4 is a conventional EL drive circuit diagram, FIG. 5 is a diagram showing the relationship between the brightness of an EL light emitting element and the drive power frequency of the EL light emitting element, and FIG. 6 is a diagram showing the relationship between the brightness of an EL light emitting element and the E
Figures 7a, b, and c are diagrams showing the relationship between the gate voltage of the switching element that drives the L light emitting element, and the E
FIG. 8 is a timing diagram for explaining the light emitting operation of the L light emitting element, and is a diagram showing the drain current-gate voltage characteristics of the first switching element. Q1 ...First switching element, Q2 ...Second switching element, CEL...EL light emitting element, CS...Storage capacitor, RD...Discharge resistor, Va...EL drive power source, 2... Gate electrode, 4
...Semiconductor layer (amorphous silicon), 6a...
...Drain electrode, 6b...Source electrode.
Claims (1)
号に応じて蓄積用コンデンサを充放電する第1の
スイツチング素子と、前記蓄積用コンデンサから
の放電電圧に応じてオンし、EL発光素子を発光
させる第2のスイツチング素子とを具備するEL
駆動回路において、 前記第2のスイツチング素子のゲート端子側に
、前記蓄積用コンデンサと並列に接続される放電
抵抗を設けたことを特徴とするEL駆動回路。 (2) 第1のスイツチング素子の半導体層をアモ
ルフアスシリコンa−Siで形成する請求項1記
載のEL駆動回路。[Claims for Utility Model Registration] (1) A first switching element that is turned on in response to a switching signal and charges and discharges a storage capacitor in response to a light emission signal; and a second switching element that causes the EL light emitting element to emit light.
An EL drive circuit, characterized in that a discharge resistor connected in parallel with the storage capacitor is provided on the gate terminal side of the second switching element. (2) The EL drive circuit according to claim 1, wherein the semiconductor layer of the first switching element is formed of amorphous silicon a-Si.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989123671U JPH0362497U (en) | 1989-10-24 | 1989-10-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989123671U JPH0362497U (en) | 1989-10-24 | 1989-10-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0362497U true JPH0362497U (en) | 1991-06-19 |
Family
ID=31671637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989123671U Pending JPH0362497U (en) | 1989-10-24 | 1989-10-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0362497U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002196706A (en) * | 1996-11-29 | 2002-07-12 | Sanyo Electric Co Ltd | Display device with simple matrix method |
| JP2007518112A (en) * | 2003-12-11 | 2007-07-05 | サーントル ナスィヨナル ドゥ ラ ルシェルシュ スイヤンティフィック (セ エヌ エール エス) | Electronic control cell of organic light-emitting diode in active matrix display, its operating method and display |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56165186A (en) * | 1980-05-24 | 1981-12-18 | Matsushita Electric Industrial Co Ltd | Matrix display unit |
| JPS59123873A (en) * | 1982-12-29 | 1984-07-17 | 富士通株式会社 | El display |
-
1989
- 1989-10-24 JP JP1989123671U patent/JPH0362497U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56165186A (en) * | 1980-05-24 | 1981-12-18 | Matsushita Electric Industrial Co Ltd | Matrix display unit |
| JPS59123873A (en) * | 1982-12-29 | 1984-07-17 | 富士通株式会社 | El display |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002196706A (en) * | 1996-11-29 | 2002-07-12 | Sanyo Electric Co Ltd | Display device with simple matrix method |
| JP2007518112A (en) * | 2003-12-11 | 2007-07-05 | サーントル ナスィヨナル ドゥ ラ ルシェルシュ スイヤンティフィック (セ エヌ エール エス) | Electronic control cell of organic light-emitting diode in active matrix display, its operating method and display |
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