JPH0362542A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To manufacture a semiconductor device which is high in strength and the conductivity pattern of which is further minutely formed by sticking a semiconductor element to one side of an insulating film and connecting element of the semiconductor element with the conductivity pattern formed on the other side of the insulating film through holes passed through the film. CONSTITUTION:Resist masks are formed on the surface of a film 1 by applying a photoresist 20 to the surface and removing the photoresist 20 from the parts corresponding to each electrode 7 of a semiconductor element 6 to be stuck to the back surface of the film 1. In addition, a bonding agent 22 is applied to the back surface of the film 1. Then through holes 23 are formed by etching the film 1 at the parts from which the resist 20 is removed and bonding agent 22. Then the element 6 is stuck to the back surface of the film 1, with each electrode 7 of the element 6 being faced to each through hole 23. After the element 6 is stuck, metallic coating films 24 are formed by vapor-depositing, for example, Cr on the surface of the film 1 and inside surface of the holes 23. Then a photoresist 25 is applied to the surface of the film 1 except the component where a conductivity pattern is to be formed and holes 23. After applying the resist 25, the conductive pattern 26 is formed by plating a conductive material, such as gold, etc., to the parts of the back surface where the resist 25 is not applied and the metallic coating films 24 in the holes 23. Finally, the resist 25 is removed from the parts other than the pattern 26.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor device using an insulating film and a method for manufacturing the same.

[Prior Art] Generally, in a semiconductor device, a semiconductor element is attached to a die pad provided on a lead frame, the external electrodes of the semiconductor element and the terminals of the lead frame are connected with wires, and these are bonded to a thermosetting resin such as epoxy resin. After packaging, each terminal is cut and manufactured.

Nowadays, as electronic devices become smaller and thinner, the semiconductor devices used therein are also packaged in higher density, so there is a desire for thinner and smaller semiconductor devices. In order to meet these demands, a semiconductor element is placed in a device hole of an insulating film such as a polyimide film, the electrodes of the semiconductor element are connected to the inner leads of the insulating film, and a liquid resin (for example, epoxy resin) is applied to this. Semiconductor devices that are packaged by printing or potting a sealing material consisting of these materials have come into use.

FIG. 2 is a plan view for explaining a conventional semiconductor device using an insulating film, and FIG. 3 is an enlarged sectional view taken along line A-A. In the figure, 1 indicates a thickness 75 in which device holes 2.2a, 2b, . It is an insulating film (hereinafter simply referred to as a film) of about 125-. 3 is a material with high conductivity such as copper provided on the film 1 with a thickness of 15 to 40-1 and a width of 50 to 3001
With a large number of conductive patterns made of metal foil of Jffi level,
A portion thereof protrudes into the device hole 2 to serve as an inner lead 3a, and is connected to the electrodes 4 of the semiconductor elements 6 to 6b. 5 is a sprocket hole for conveying the film 1.

FIG. 4 is a schematic diagram showing an example of an apparatus for attaching a semiconductor element to the film 1 as described above. The semiconductor element 6 placed on the chip stand 8 is positioned at a predetermined position by a positioning guide 9. On the other hand, the film 1 guided by the tape rail IO and sent in the direction perpendicular to the plane of the paper by the sprocket stops at the position where its device hole 2 reaches above the semiconductor element 6, and the film 1, which is
(not shown) and each inner lead 3a. Next, the heated bonding tool 11 is lowered to apply pressure to each inner lead 3a and form it at a predetermined angle to fuse and connect each inner lead 3a to the electrode. Next, the film 1 is moved to cut each inner lead 3a, or the semiconductor element 6 and a part of the inner lead 3a are sealed with liquid sealing resin by squeegee printing, botting, etc., and the semiconductor device is Manufacture.

[Problems to be Solved by the Invention] The semiconductor device described above has many features such as being able to be made thinner and having higher packaging density than conventional semiconductor devices, but it also has the following problems. .

(1) As shown in FIG. 3, the semiconductor element 6 is suspended from the inner leads 3a, so as the number of inner leads 3a increases due to miniaturization, the width inevitably becomes narrower and the strength decreases.

(2> The electrode 4 of the semiconductor element 6 has an inner lead 3a
Since gold bumps are used to improve connection reliability and provide a buffering effect when bonding to the tip of the metal, yields are poor and costs increase.

(3) Since the inner lead 3a and the electrode 4 of the semiconductor element 6 are fused by pressing down the heated bonding tool 11, if the electrode is provided on the active surface of the semiconductor element 6, the bonding tool Bonding cannot be performed because cracks may occur due to the reduction of 11.

(4) Since thermal and mechanical stress is applied to the semiconductor element 6 during bonding, cracks are likely to occur in the semiconductor element 6, increasing the incidence of defective products.

The present invention has been made to solve the above problems, and provides a semiconductor device and a method for manufacturing the same that can connect a conductive pattern of an insulating film and an electrode of a semiconductor element without applying stress to the semiconductor element. The purpose is to

[Means for Solving the Problems] The present invention provides for bonding the active surface of the semiconductor element to one side of an insulating film in which through holes are provided corresponding to each electrode of the semiconductor element, and A semiconductor device in which a conductive pattern formed on a surface of the semiconductor element is connected to an electrode of the semiconductor element through the through hole. and providing through holes in the insulating film at positions corresponding to the respective electrodes of the semiconductor element, applying an adhesive to one surface of the insulating film or the active surface of the semiconductor element, and attaching the semiconductor element to each electrode thereof. Adhere to the insulating film so as to face each of the through holes, and then form a metal film on the other surface of the insulating film and the through holes, and coat the bottom of each of the through holes on the metal film on the other surface. The present invention provides a method for manufacturing a semiconductor device, which comprises forming a conductive pattern that extends to the semiconductor device, and connecting the conductive pattern to an electrode of the semiconductor element.

[Example] FIG. 1 is a schematic diagram for explaining an example of the method for manufacturing a semiconductor device according to the present invention. In addition, 1 is an insulating film such as a polyimide film (hereinafter simply referred to as a film)
In the example, a material having a thickness of 25 cm was used. Sprocket holes 5 are provided on both sides of this film 1, but device holes 2 and fingers 3a as shown in the conventional example of FIG. 2 are not formed. Hereinafter, an example of the manufacturing method of the present invention will be explained with reference to the drawings.

(1) (a) As shown in the figure, the surface of film 1 (second
A photoresist 2o is applied to the area (width W in the figure), and the area corresponding to each electrode 7 of the semiconductor element 6 (d
(see figure) are removed to form a resist mask. Further, an adhesive 22 (thickness 5- in the example) is applied to the back surface.

(2) Next, as shown in Figure (b), the film 1 and adhesive 22 are etched in the area where the photoresist 2° has been removed to form a through hole 23.

(3) (c) As shown in the figure, the photoresist 20 applied to the surface of the film 1 is removed.

(4) (d) As shown in the figure, the semiconductor element 6 is adhered to the back surface of the film 1 with each electrode 7 of the semiconductor element 6 facing each through hole 23.

(5) (e) As shown in the figure, for example, chromium (Cr) is vapor-deposited on the surface of the film 1 and the inner surface of the through hole 23 to form a metal film 24 (thickness 0.2 - in the example). . At this time, a metal film 24 is also formed on the surface of the electrode 7 of the semiconductor element 6 in the through hole 23 .

(8) (f') As shown in the figure, photoresist 25 is applied to the part where the conductive pattern is to be formed and the part excluding the through hole 23.
In the embodiment, the resist mask is coated to a thickness of l〇- or more).

(7) (g) As shown in the figure, a conductive material such as gold (Au) is plated on the parts where the photoresist 25 is not applied and on the metal film 24 of the through hole 23 to form a conductive pattern 26. . Thereby, each electrode 7 of the semiconductor element 6 is connected to the conductive pattern 2B via the metal film 23.

(8) Finally, (h) as shown in the figure, the conductive pattern 2
The photoresist 25 and metal film 24 other than the portions 6 are removed by etching.

Film 1 on which semiconductor element 6 is mounted as described above
is cut within the range of the conductive pattern 28 having an appropriate length, and a semiconductor device is manufactured.

Note that the present invention can also be applied to a semiconductor device using a long insulating film shown as a conventional example in FIG.

Although the embodiments of the method for manufacturing a semiconductor device according to the present invention have been described above, the present invention is not limited thereto.
Appropriate changes can be made without departing from the gist of the invention.

[Effects of the Invention] As is clear from the above description, the present invention is capable of bonding a semiconductor element to one surface of an insulating film and forming a conductive pattern on the other surface of the insulating film without using a bonding tool or the like. Since the electrodes of the semiconductor element are connected to the electrodes of the semiconductor element through the through holes provided in the insulating film, the following remarkable effects can be obtained.

(1) Since the semiconductor element is bonded to the insulating film, there is no overhanging portion unlike in conventional devices.

Therefore, the strength is high and the conductive pattern can be further made finer.

(2) Since no bonding tool is used, even semiconductor elements with electrodes provided on the active surface can be mounted on the insulating film.

(3) Since no thermal or mechanical stress is applied during mounting, there is no risk of cracks occurring in the semiconductor element, and the yield is significantly improved.

(4) Since no bonding tools are used, manufacturing equipment is simple and manufacturing is easy.

[Brief explanation of drawings]

FIGS. 1(a) to (h) are explanatory diagrams showing an example of the manufacturing method according to the present invention, FIG. 2 is a plan view showing an example of manufacturing a conventional semiconductor device using an insulating film, and FIG. Its A-A
The enlarged sectional view and FIG. 4 are schematic diagrams showing an example of bonding between fingers and electrodes. 1: Insulating film, 6: Semiconductor element, 7: Electrode, 22: Adhesive, 23: Through hole, 24: Metal film, 26: Conductive pattern.

Claims (2)

[Claims] (1) The active surface of the semiconductor element is adhered to one side of an insulating film in which through holes are provided corresponding to each electrode of the semiconductor element, and the conductive pattern formed on the other side of the insulating film and the A semiconductor device in which electrodes of a semiconductor element are connected to each other through the through holes. (2) Provide through holes in the insulating film at positions corresponding to each electrode of the semiconductor element, apply adhesive to one surface of the insulating film or the active surface of the semiconductor element, and attach the semiconductor element to each electrode of the insulating film. are bonded to the insulating film so as to face each of the through holes, and then a metal coating is formed on the other surface of the insulating film and the through holes, so that the bottom of each of the through holes is coated on the metal coating on the other surface. 1. A method for manufacturing a semiconductor device, comprising forming a conductive pattern reaching up to 100 m, and connecting the conductive pattern to an electrode of the semiconductor element.