JPH0362983A - semiconductor laser equipment - Google Patents
semiconductor laser equipmentInfo
- Publication number
- JPH0362983A JPH0362983A JP19850289A JP19850289A JPH0362983A JP H0362983 A JPH0362983 A JP H0362983A JP 19850289 A JP19850289 A JP 19850289A JP 19850289 A JP19850289 A JP 19850289A JP H0362983 A JPH0362983 A JP H0362983A
- Authority
- JP
- Japan
- Prior art keywords
- monitor
- stem
- chip
- heat sink
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体レーザダイオードのパッケージの形
状に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the shape of a package for a semiconductor laser diode.
〔従来の技術ｊ
第３図および第４図は従来のモニタＰＤを付ける台（以
下モニタＰＤマウント部という）として凸部形状をなす
ステムを持つ半導体レーザ装置を示す図で、第３図は上
面図、第４図は第３図に示すＢ−Ｂにおける断面図、第
５図及び第６図は従来のモニタＰＤマウント部として凹
部形状をなすステムを持つ半導体レーザ装置を示す図で
、＠５図は上面図、第６図は第５図に示すＣ−Ｃ４ζお
ける断面図である。図において、（１）はレーザチップ
、（２）はサブマウント、（３）はヒートシンクブロッ
ク、（４）はモニタＰＤチップ、（７Ｊ 、 （Ｑ）は
ステム、（８）は凸部形状を持つモニタＰＤマウント部
、ＣＩＧは凹部形状を持つモニタＰＤマウント部である
。[Prior art j Figures 3 and 4 are diagrams showing a conventional semiconductor laser device having a convex stem as a stand on which a monitor PD is attached (hereinafter referred to as monitor PD mount part), and Figure 3 shows the top surface. 4 are cross-sectional views taken along line B-B shown in FIG. 3, and FIGS. 5 and 6 are diagrams showing a semiconductor laser device having a concave-shaped stem as a conventional monitor PD mount. The figure is a top view, and FIG. 6 is a sectional view taken along C-C4ζ shown in FIG. 5. In the figure, (1) is a laser chip, (2) is a submount, (3) is a heat sink block, (4) is a monitor PD chip, (7J, (Q) is a stem, and (8) is a convex shape. The monitor PD mount section CIG is a monitor PD mount section having a concave shape.
次に動作について説明する。Next, the operation will be explained.
ステム（７）又は、ステム（９）にモニタＰＤチップ（
４）をハンダ付けする。モニタＰＤ受光直は、ステム（
７３、（９Ｊの中心にくるようにする。A monitor PD chip (
4) Solder. The monitor PD light reception is directly connected to the stem (
73, (Make sure it is in the center of 9J.
次に、レーザテップ（１）、サブマウント（２］及びヒ
ートシンクブロック（３）をハンダ付けしたブロックを
レーザチップ（１）がモニタＰＤチップ（４）の受光面
上にくるようにハンダ付けする。第４図に示す凸部形状
のモニタＰＤマウント部（８）を持つものでは、レーザ
チップ（１）とモニタＰＤチップ（４）の間隔が小すく
、第６図に示す凹部形状のモニタＦＤマウント部σＱを
持つものでは、大きくなる。Next, solder the block to which the laser tip (1), submount (2), and heat sink block (3) are soldered so that the laser chip (1) is on the light receiving surface of the monitor PD chip (4). In the case of the monitor PD mount section (8) having the convex shape shown in Fig. 4, the distance between the laser chip (1) and the monitor PD chip (4) is small, and the monitor FD mount section having the concave shape shown in Fig. 6 is small. For those with σQ, it becomes large.
従来の半導体レーザ装置は以上のように構成されている
ので、凸部形状のモニタＰＤマウント部を持つステムで
は、組立後レーザテップとモニタＰＤチップが近いので
１ｍが大きくなる。又、凹部形状のモニタＰＤマウント
部を持つステムでは、ステムとヒートシンクブロックを
組立てるとき、ヒートシンクブロックの位置決めができ
ないという問題点があった。Since the conventional semiconductor laser device is constructed as described above, in the case of a stem having a convex-shaped monitor PD mount section, the length of the stem becomes 1 m because the laser tip and the monitor PD chip are close to each other after assembly. Further, with a stem having a concave-shaped monitor PD mount section, there is a problem in that the heat sink block cannot be positioned when the stem and the heat sink block are assembled.
この発明は、上記のような問題点を解消するためになさ
れたもので、組立後の１ｍの低減、組立の際のヒートシ
ンクブロックの位置決め可能を目的とする。This invention was made to solve the above-mentioned problems, and aims to reduce the distance by 1 m after assembly and to enable positioning of the heat sink block during assembly.
この発明に係る、モニタＰＤマウント部をもつステムの
構造は、モニタＰＤマウント部の形状に、凸凹を併用し
た形を施したものである。The structure of a stem having a monitor PD mount portion according to the present invention is such that the monitor PD mount portion has a combination of concave and convex shapes.
モニタＰＤマウント部を凸凹併用型にすることで、組立
後のＩｍ低減、組立時のヒートシンクブロックの位置決
め可能を実現できる。By making the monitor PD mount part concave and convex, it is possible to reduce Im after assembly and to position the heat sink block during assembly.
〔実施例」 以下、この発明の一実施例を図について説明する。〔Example" An embodiment of the present invention will be described below with reference to the drawings.
第１図は半導体レーザ装置の上置図、第２図は第１図に
示すＡ−Ａにおける断簡図である。図において（１）〜
（４）は第３図の従来例に示したものと同等であるので
説明を省略する。（６）は凸凹併用型のモニタＰＤマウ
ント部、（５）は凸凹併用型のモニタＦＤマウント部（
６７を持つステムである。FIG. 1 is a top view of the semiconductor laser device, and FIG. 2 is a simplified view taken along line AA shown in FIG. 1. In the figure (1) ~
Since (4) is the same as that shown in the conventional example of FIG. 3, its explanation will be omitted. (6) is a concave and convex type monitor PD mount part, (5) is a concave and convex type monitor FD mount part (
It has a stem with 67.
次に動作について説明する。Next, the operation will be explained.
凸凹併用型のステム（旬のモニタＦＤマウント部（６）
にモニタＰｉ）チップ（４）をハンダ付けする。モニタ
ＦＤチップ（４）Ｉよ、ステム（５）の中心にくるよう
にする。Concave and concave stem (current monitor FD mount part (6)
Solder the monitor Pi) chip (4) to the Monitor FD chip (4) I, place it in the center of the stem (5).
次に、レーザチップ（ｌ〉、サブマウント（２）及びヒ
ートシンクブロック（３）をハンダ付けしたブロックを
ステム（５）にハンダ付けする。このとき、モニタＰＤ
マウント部（６）の凸部を目安にして、モニタＰＤチッ
プ（４）の受光筒上にレーザテップ（１）がくるように
する。Next, the block to which the laser chip (l), submount (2), and heat sink block (3) are soldered is soldered to the stem (5).At this time, the monitor PD
Using the convex portion of the mount portion (6) as a guide, position the laser tip (1) over the light receiving tube of the monitor PD chip (4).
そして、また、組立後は、第３図の従来例に示す凸部形
状のモニタＰＤマウント部（８）をもつステム（７）の
ときよりもレーザテップ（１）とモニタＰＤチップ（４
）の間隔が大きくなる。After assembly, the laser tip (1) and the monitor PD chip (4) are larger than the stem (7) having the convex-shaped monitor PD mount part (8) shown in the conventional example shown in FIG.
) becomes larger.
〔発明の効果」
以上のように、この発明によれば、ステム上向に凸凹併
用型のモニタＰＤマウント部を形成することで、組立後
のモニタＰＤの１ｍ低減や、組立時のヒートシンクブロ
ックの位置決めが可能となる効果がある。[Effects of the Invention] As described above, according to the present invention, by forming a concave and convex type monitor PD mount part above the stem, the monitor PD after assembly can be reduced by 1m, and the heat sink block during assembly can be reduced by 1 m. This has the effect of making positioning possible.
第１図はこの発明の一実施例による半導体レーザ装置の
上面図、第２図は第１図に示すｌ’ｔ・Ａにおける断面
図、第３図は従来の凸部形状をなすステムを持つ半導体
レーザ装置の上面図、第４図は第３図に示すＢ−Ｂにお
ける断痛図、＠５図は従来の凹部形状をなすステムを持
つ半導体レーザ装置の上面図、第６図は第５図に示すＣ
−Ｃにおける断面図である。図において（１）はレーザ
チップ、（２）はサブマウント、（３）はヒートシンク
ブロック、（４ＪはモニタＰＤチップ、（５〕はステム
、（６）はモニタＰＤマウント部である。
なお、図中、同一符号は同一、又は相当部分を示す。FIG. 1 is a top view of a semiconductor laser device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view at l't.A shown in FIG. 1, and FIG. 3 has a conventional convex-shaped stem. A top view of a semiconductor laser device, FIG. 4 is a cross-sectional view taken along line B-B shown in FIG. 3, FIG. C shown in the figure
-C is a sectional view. In the figure, (1) is the laser chip, (2) is the submount, (3) is the heat sink block, (4J is the monitor PD chip, (5) is the stem, and (6) is the monitor PD mount part. Inside, the same reference numerals indicate the same or equivalent parts.
Claims (1)
たことを特徴とする半導体レーザ装置。A semiconductor laser device characterized in that a stem is used, the upper surface of which forms a base on which a PD is attached.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19850289A JPH0362983A (en) | 1989-07-31 | 1989-07-31 | semiconductor laser equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19850289A JPH0362983A (en) | 1989-07-31 | 1989-07-31 | semiconductor laser equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0362983A true JPH0362983A (en) | 1991-03-19 |
Family
ID=16392201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19850289A Pending JPH0362983A (en) | 1989-07-31 | 1989-07-31 | semiconductor laser equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0362983A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5519720A (en) * | 1993-03-04 | 1996-05-21 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light emitting device |
| JP2009021432A (en) * | 2007-07-12 | 2009-01-29 | Nichia Corp | Semiconductor laser apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6039880A (en) * | 1983-08-12 | 1985-03-01 | Hitachi Ltd | Light-emitting device |
| JPS63102387A (en) * | 1986-10-20 | 1988-05-07 | Shinko Electric Ind Co Ltd | Package for semiconductor laser device |
-
1989
- 1989-07-31 JP JP19850289A patent/JPH0362983A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6039880A (en) * | 1983-08-12 | 1985-03-01 | Hitachi Ltd | Light-emitting device |
| JPS63102387A (en) * | 1986-10-20 | 1988-05-07 | Shinko Electric Ind Co Ltd | Package for semiconductor laser device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5519720A (en) * | 1993-03-04 | 1996-05-21 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light emitting device |
| JP2009021432A (en) * | 2007-07-12 | 2009-01-29 | Nichia Corp | Semiconductor laser apparatus |
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