JPH0363568U - - Google Patents
Info
- Publication number
- JPH0363568U JPH0363568U JP1989126358U JP12635889U JPH0363568U JP H0363568 U JPH0363568 U JP H0363568U JP 1989126358 U JP1989126358 U JP 1989126358U JP 12635889 U JP12635889 U JP 12635889U JP H0363568 U JPH0363568 U JP H0363568U
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- substrate
- inert atmosphere
- cooling device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第1図は本考案の一具体例のマグネトロンスパ
ツタリング装置の略示正面図、第2図は従来装置
の略示正面図である。
1……減圧ベルジヤ、2……基板(半導体ウエ
ーハ)、3……ターゲツト、7……不活性雰囲気
ガスの導入管路、10……熱交換器、11……冷
凍機、12……ガス冷却装置。
FIG. 1 is a schematic front view of a magnetron sputtering device according to a specific example of the present invention, and FIG. 2 is a schematic front view of a conventional device. DESCRIPTION OF SYMBOLS 1... Decompression bell gear, 2... Substrate (semiconductor wafer), 3... Target, 7... Inert atmosphere gas introduction pipe, 10... Heat exchanger, 11... Refrigerator, 12... Gas cooling Device.
Claims (1)
度プラズマを発生させてスパツタリングする装置
において、 前記基板およびターゲツトを囲繞する減圧ベル
ジヤへの不活性雰囲気ガスの導入管路に、不活性
雰囲気ガス中の水分を除去するガス冷却装置を付
設したことを特徴とするマグネトロンスパツタリ
ング装置。[Scope of Claim for Utility Model Registration] An apparatus for sputtering by generating high-density plasma between a substrate and a target using an orthogonal electromagnetic field, which includes: A magnetron sputtering device characterized in that it is equipped with a gas cooling device for removing moisture in an inert atmosphere gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989126358U JPH0363568U (en) | 1989-10-26 | 1989-10-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989126358U JPH0363568U (en) | 1989-10-26 | 1989-10-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0363568U true JPH0363568U (en) | 1991-06-20 |
Family
ID=31674172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989126358U Pending JPH0363568U (en) | 1989-10-26 | 1989-10-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0363568U (en) |
-
1989
- 1989-10-26 JP JP1989126358U patent/JPH0363568U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR920003428A (en) | Treatment method and device | |
| JPH0692613A (en) | Isolation of fulleren | |
| JPS5415462A (en) | Method of removing heat distortion | |
| JPS53123669A (en) | Wafer holding method | |
| JPH056654Y2 (en) | ||
| JPH0351834U (en) | ||
| JPS6457615A (en) | Manufacture of thin film type semiconductor device | |
| JPS59117138U (en) | semiconductor manufacturing equipment | |
| JPS5324662A (en) | Air cooler | |
| JPS63164431A (en) | Dry etching system | |
| JPS6146017A (en) | Thin film producing apparatus | |
| JPS6139937U (en) | Diffusion furnace type vapor phase growth equipment | |
| JPS5812941U (en) | Susceptor for vapor phase growth equipment | |
| JPS5384684A (en) | Plasma etching device | |
| JPH0350327U (en) | ||
| JPH042590U (en) | ||
| JPS6147067U (en) | Film forming device | |
| JPS6422025U (en) | ||
| JPS6343299A (en) | Plasma generator utilizing electronic cyclotron resonance | |
| JPS6334164U (en) | ||
| JPS5916132U (en) | Heating mechanism of vapor phase growth equipment | |
| JPS61176258U (en) | ||
| JPH058938U (en) | Magnetron spattering device | |
| JPS60185656U (en) | High frequency sputtering device | |
| JPH0437260U (en) |