JPH0363568U - - Google Patents

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Publication number
JPH0363568U
JPH0363568U JP12635889U JP12635889U JPH0363568U JP H0363568 U JPH0363568 U JP H0363568U JP 12635889 U JP12635889 U JP 12635889U JP 12635889 U JP12635889 U JP 12635889U JP H0363568 U JPH0363568 U JP H0363568U
Authority
JP
Japan
Prior art keywords
target
sputtering
substrate
inert atmosphere
cooling device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12635889U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12635889U priority Critical patent/JPH0363568U/ja
Publication of JPH0363568U publication Critical patent/JPH0363568U/ja
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の一具体例のマグネトロンスパ
ツタリング装置の略示正面図、第２図は従来装置
の略示正面図である。 １……減圧ベルジヤ、２……基板（半導体ウエ
ーハ）、３……ターゲツト、７……不活性雰囲気
ガスの導入管路、１０……熱交換器、１１……冷
凍機、１２……ガス冷却装置。 FIG. 1 is a schematic front view of a magnetron sputtering device according to a specific example of the present invention, and FIG. 2 is a schematic front view of a conventional device. DESCRIPTION OF SYMBOLS 1... Decompression bell gear, 2... Substrate (semiconductor wafer), 3... Target, 7... Inert atmosphere gas introduction pipe, 10... Heat exchanger, 11... Refrigerator, 12... Gas cooling Device.

Claims (1)

【実用新案登録請求の範囲】 基板とターゲツトの間に直交電磁界による高密
度プラズマを発生させてスパツタリングする装置
において、 前記基板およびターゲツトを囲繞する減圧ベル
ジヤへの不活性雰囲気ガスの導入管路に、不活性
雰囲気ガス中の水分を除去するガス冷却装置を付
設したことを特徴とするマグネトロンスパツタリ
ング装置。[Scope of Claim for Utility Model Registration] An apparatus for sputtering by generating high-density plasma between a substrate and a target using an orthogonal electromagnetic field, which includes: A magnetron sputtering device characterized in that it is equipped with a gas cooling device for removing moisture in an inert atmosphere gas.
JP12635889U 1989-10-26 1989-10-26 Pending JPH0363568U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12635889U JPH0363568U (en) 1989-10-26 1989-10-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12635889U JPH0363568U (en) 1989-10-26 1989-10-26

Publications (1)

Publication Number Publication Date
JPH0363568U true JPH0363568U (en) 1991-06-20

Family

ID=31674172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12635889U Pending JPH0363568U (en) 1989-10-26 1989-10-26

Country Status (1)

Country Link
JP (1) JPH0363568U (en)

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