JPH036402A - Detection of bend of lead for semiconductor device - Google Patents
Detection of bend of lead for semiconductor deviceInfo
- Publication number
- JPH036402A JPH036402A JP14059689A JP14059689A JPH036402A JP H036402 A JPH036402 A JP H036402A JP 14059689 A JP14059689 A JP 14059689A JP 14059689 A JP14059689 A JP 14059689A JP H036402 A JPH036402 A JP H036402A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- lead
- projecting part
- height
- standoff value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000001514 detection method Methods 0.000 title claims description 9
- 238000005452 bending Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims 2
- 238000005259 measurement Methods 0.000 abstract description 5
- 239000000725 suspension Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
Landscapes
- A Measuring Device Byusing Mechanical Method (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置用リード曲り検出方法に関し、特に
スタンドオフ値を測定してリード曲りを検出する半導体
装置用リード曲り検出方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead bend detection method for a semiconductor device, and more particularly to a lead bend detection method for a semiconductor device that detects lead bend by measuring a standoff value.
従来、ＱＦＰ等におけるこの種の半導体装置用リード曲
り検出方法は、−１Ｒ的には、第３図及び第４図の断面
図に示すように、半導体装置１をセットするめの平坦面
を有するセフ１ル治具４を使用し、半導体装置］をセッ
トする際、半導体装置］の底面で受けるようになってい
た。第４図は突起６を設けた場合のセット治具である。Conventionally, this type of lead bend detection method for semiconductor devices in QFPs, etc., has been carried out using a safe with a flat surface for setting the semiconductor device 1, as shown in the cross-sectional views of FIGS. When setting the semiconductor device using the 1-ru jig 4, it was designed to be received at the bottom of the semiconductor device. FIG. 4 shows a setting jig in which a protrusion 6 is provided.
」−述した従来の検出方法は、半導体装置１の底面を、
セット治具４の平坦面で直接受ける構造となっているた
め、半導体装置］に反りがあるとセット状態が安定ぜす
、セット毎にスタンドオフ値が異なるという欠点がある
。”-The conventional detection method described above detects the bottom surface of the semiconductor device 1 by
Since the semiconductor device is directly received by the flat surface of the setting jig 4, if the semiconductor device is warped, the set state becomes unstable and the standoff value differs depending on the set.
ここで、スタンドオフ値とは、半導体装置底面とリード
先端との高さの差であり、横方向から覗く等の手段によ
って測定し、このスタンドオフ値によってリードの曲り
を検出するものである。Here, the standoff value is the difference in height between the bottom surface of the semiconductor device and the tip of the lead, and is measured by means such as viewing from the side, and bending of the lead is detected based on this standoff value.
本発明は、半導体装置を水平に支持しリードのスタンド
オフ値を測定してり一１〜曲りを検出する半導体装置用
リード曲り検出方法において、前記半導体装置を水平に
支持する際この半導体装置から両側に導出するリードの
付根部分を支持する半導体装置用リード曲り検出方法で
ある。The present invention provides a lead bend detection method for a semiconductor device in which bending is detected by horizontally supporting the semiconductor device and measuring the standoff value of the lead. This is a lead bend detection method for a semiconductor device that supports the root portions of leads led out on both sides.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例を説明するための断面図
である。FIG. 1 is a sectional view for explaining a first embodiment of the present invention.
セット治具４に半導体装置１をセットする際には、リー
ド２の付根の裏面をセット治具４の凸部７で受けるよう
になっている。この凸部７は、半導体装置１の底面を浮
かせるだｉｆの高さを有し、両側のリードを支持するよ
うに１対が設けられている。When setting the semiconductor device 1 on the setting jig 4, the back surface of the base of the lead 2 is received by the convex portion 7 of the setting jig 4. The convex portions 7 have a height enough to raise the bottom surface of the semiconductor device 1, and a pair of convex portions 7 are provided so as to support the leads on both sides.
よって、スタンドオフ値３を求めるには、半導体装置１
−を浮かした高さ５を補正することにより求めることが
できる。Therefore, in order to obtain the standoff value 3, the semiconductor device 1
It can be obtained by correcting the height 5 with -.
第２図は本発明の第２の実施例を説明するための断面図
である。FIG. 2 is a sectional view for explaining a second embodiment of the present invention.
半導体装置］を裏返しにし、底面を上にしてセット治具
４にセラ１〜する。従って、リード２の付根の上面をセ
ット治具４の凸部７か受けている。Turn the semiconductor device upside down and place it in the setting jig 4 with the bottom side facing up. Therefore, the upper surface of the base of the lead 2 is received by the convex portion 7 of the setting jig 4.
よって、スタンドオフ値３を求めるには、半導体装置１
を浮かした高さ５を補正することにより求めることがで
きる。Therefore, in order to obtain the standoff value 3, the semiconductor device 1
It can be obtained by correcting the height 5 which is a height of 5.
以上説明したように本発明は、セフ１ル治具に凸部を設
け、この凸部で半導体装置のリード付根を受けることに
より、半導体装置の反りによるスタンドオフ値の測定の
ばらつきを少なくし、安定した測定をすることができる
という効果がある。As explained above, the present invention provides a protrusion on the safety jig and receives the root of the lead of the semiconductor device on the protrusion, thereby reducing variations in standoff value measurement due to warpage of the semiconductor device. This has the effect of allowing stable measurements.
第１図は本発明の第１の実施例を説明する断面図、第２
図は本発明の第２の実施例を説明する断面図、第３図及
び第４図はそれぞれ従来の検出方法を説明する断面図で
ある。
１・・・半導体装置、２・・・リード、３・・・スタン
ドオフ値、４・・・セット治具、５・・・浮かした高さ
、６・・・突起、７・・・凸部。FIG. 1 is a sectional view illustrating the first embodiment of the present invention;
The figure is a cross-sectional view for explaining the second embodiment of the present invention, and FIGS. 3 and 4 are cross-sectional views for explaining the conventional detection method, respectively. DESCRIPTION OF SYMBOLS 1...Semiconductor device, 2...Lead, 3...Standoff value, 4...Set jig, 5...Floating height, 6...Protrusion, 7...Convex part .
Claims (1)
測定してリード曲りを検出する半導体装置用リード曲り
検出方法において、前記半導体装置を水平に支持する際
この半導体装置から両側に導出するリードの付根部分を
支持することを特徴とする半導体装置用リード曲り検出
方法。In a lead bend detection method for a semiconductor device in which a semiconductor device is supported horizontally and lead bending is detected by measuring the standoff value of the lead, the base of the lead led out to both sides from the semiconductor device when the semiconductor device is supported horizontally. A method for detecting lead bending for a semiconductor device, the method comprising supporting a lead portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14059689A JPH036402A (en) | 1989-06-02 | 1989-06-02 | Detection of bend of lead for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14059689A JPH036402A (en) | 1989-06-02 | 1989-06-02 | Detection of bend of lead for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH036402A true JPH036402A (en) | 1991-01-11 |
Family
ID=15272376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14059689A Pending JPH036402A (en) | 1989-06-02 | 1989-06-02 | Detection of bend of lead for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH036402A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04109548U (en) * | 1991-03-12 | 1992-09-22 | 三菱電機株式会社 | standoff measuring device |
-
1989
- 1989-06-02 JP JP14059689A patent/JPH036402A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04109548U (en) * | 1991-03-12 | 1992-09-22 | 三菱電機株式会社 | standoff measuring device |
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