JPH0364309U - - Google Patents

Info

Publication number
JPH0364309U
JPH0364309U JP10870190U JP10870190U JPH0364309U JP H0364309 U JPH0364309 U JP H0364309U JP 10870190 U JP10870190 U JP 10870190U JP 10870190 U JP10870190 U JP 10870190U JP H0364309 U JPH0364309 U JP H0364309U
Authority
JP
Japan
Prior art keywords
fluidized bed
main fan
pipes
fluidized
interposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10870190U
Other languages
English (en)
Other versions
JPH0344967Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10870190U priority Critical patent/JPH0344967Y2/ja
Publication of JPH0364309U publication Critical patent/JPH0364309U/ja
Application granted granted Critical
Publication of JPH0344967Y2 publication Critical patent/JPH0344967Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Fluidized-Bed Combustion And Resonant Combustion (AREA)

Description

【図面の簡単な説明】
第１図は従来装置の断面図、第２図は本考案装
置の一実施例を示す断面図、第４図は第２図に示
す要部の拡大図、第３図は比較例を示す断面図で
ある。 Ａ，Ｂ，Ｃ，Ｄ……流動床、１……本体、１Ａ
，１Ｂ，１Ｃ，１Ｄ，２Ａ，２Ｄ……制御ダンパ
、２……空気分散板、３，３Ａ，３Ｂ，３Ｃ，３
Ｄ……風箱、４……主フアン、５……主管、５Ａ
，５Ｄ……枝管、６……流動床、７，７Ａ，７Ｄ
……層内バーナ、８，８Ａ，８Ｄ……燃焼室、９
……燃料管、１０……フアン、１１……流動床ボ
イラ、１２……仕切管、１３……オリフイス、１
４……流量発信器、１５……流量設定値発信器、
１６……比較器、１７……制御器、１８……操作
器。

Claims (1)

  1. 【実用新案登録請求の範囲】 流動床ボイラの流動床を、水平方向の多数の伝
    熱管を管と管との間にすきまが生じるように縦方
    向に重ねて接続してなる仕切管１２群により縦割
    りに複数個に区切り、 その区切られた流動床Ａ，Ｂ，Ｃ，Ｄのそれぞ
    れに独立した風箱３Ａ，３Ｂ，３Ｃ，３Ｄを設け
    、 主フアン４からの燃焼用空気を所定量各風箱へ
    送り込むための制御ダンパ１Ａ，１Ｂ，１Ｃ，１
    Ｄをそれぞれ介設した枝管によつて各風箱と主フ
    アン４とを連結し、 上記区切られた流動床のうちのいくつかの流動
    床の側面上部に小さな燃焼室８Ａ，８Ｄを持つ層
    内バーナ７Ａ，７Ｄを装着し、 主フアン４からの燃焼用空気を層内バーナに所
    定量送り込むための制御ダンパ２Ａ，２Ｄを介設
    した枝管５Ａ，５Ｄによつて層内バーナ７Ａ，７
    Ｄと主フアン４とを連結したことを特徴とする流
    動床ボイラの起動装置。
JP10870190U 1990-10-17 1990-10-17 Expired JPH0344967Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10870190U JPH0344967Y2 (ja) 1990-10-17 1990-10-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10870190U JPH0344967Y2 (ja) 1990-10-17 1990-10-17

Publications (2)

Publication Number Publication Date
JPH0364309U true JPH0364309U (ja) 1991-06-24
JPH0344967Y2 JPH0344967Y2 (ja) 1991-09-24

Family

ID=31657326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10870190U Expired JPH0344967Y2 (ja) 1990-10-17 1990-10-17

Country Status (1)

Country Link
JP (1) JPH0344967Y2 (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7211508B2 (en) 2003-06-18 2007-05-01 Applied Materials, Inc. Atomic layer deposition of tantalum based barrier materials

Also Published As

Publication number Publication date
JPH0344967Y2 (ja) 1991-09-24

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