JPH0365621A - レーザー光検出器の組み合せ - Google Patents
レーザー光検出器の組み合せInfo
- Publication number
- JPH0365621A JPH0365621A JP2165859A JP16585990A JPH0365621A JP H0365621 A JPH0365621 A JP H0365621A JP 2165859 A JP2165859 A JP 2165859A JP 16585990 A JP16585990 A JP 16585990A JP H0365621 A JPH0365621 A JP H0365621A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- photodetector
- grown
- layer
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 238000005253 cladding Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 4
- 239000000463 material Substances 0.000 claims 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 238000002347 injection Methods 0.000 abstract description 9
- 239000007924 injection Substances 0.000 abstract description 9
- 230000005855 radiation Effects 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US371,474 | 1989-06-26 | ||
| US07/371,474 US4947400A (en) | 1989-06-26 | 1989-06-26 | Laser-photodetector assemblage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0365621A true JPH0365621A (ja) | 1991-03-20 |
Family
ID=23464135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2165859A Pending JPH0365621A (ja) | 1989-06-26 | 1990-06-26 | レーザー光検出器の組み合せ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4947400A (fr) |
| EP (1) | EP0405800A3 (fr) |
| JP (1) | JPH0365621A (fr) |
| CA (1) | CA2014937C (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6602629B1 (en) | 2000-05-24 | 2003-08-05 | Eveready Battery Company, Inc. | Zero mercury air cell |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5040033A (en) * | 1989-06-26 | 1991-08-13 | At&T Bell Laboratories | Optical amplifier-photodetector assemblage |
| US5136604A (en) * | 1990-03-28 | 1992-08-04 | Xerox Corporation | Apparatus and method for detecting the power level in single and multi-stripe integrated lasers |
| US5252513A (en) * | 1990-03-28 | 1993-10-12 | Xerox Corporation | Method for forming a laser and light detector on a semiconductor substrate |
| US5130762A (en) * | 1990-11-20 | 1992-07-14 | Amp Incorporated | Integrated quantum well feedback structure |
| GB9106874D0 (en) * | 1991-04-02 | 1991-05-22 | Lumonics Ltd | Optical fibre assembly for a laser system |
| FR2679388B1 (fr) * | 1991-07-19 | 1995-02-10 | Cit Alcatel | Laser semi-conducteur a double canal et son procede de realisation. |
| US5625636A (en) * | 1991-10-11 | 1997-04-29 | Bryan; Robert P. | Integration of photoactive and electroactive components with vertical cavity surface emitting lasers |
| CA2091302A1 (fr) * | 1992-03-11 | 1993-09-12 | Ichiro Yoshida | Laser a semiconducteur et sa methode de fabrication |
| US5285466A (en) * | 1992-05-20 | 1994-02-08 | Wisconsin Alumni Research Foundation | Feedback mechanism for vertical cavity surface emitting lasers |
| EP0639875A1 (fr) * | 1993-07-12 | 1995-02-22 | BRITISH TELECOMMUNICATIONS public limited company | Structure de barrière électrique pour dispositif semiconducteur |
| JP3535260B2 (ja) * | 1995-05-08 | 2004-06-07 | 三菱電機株式会社 | 半導体光素子並びに該半導体光素子を用いたフォトダイオード、変調器および半導体レーザ |
| US8923101B1 (en) | 2013-09-17 | 2014-12-30 | Seagate Technology Llc | Monolithically integrated laser diode and power monitor |
| US11456577B2 (en) * | 2020-07-28 | 2022-09-27 | Raytheon Company | Monolithic quantum cascade laser (QCL)/avalanche photodiode (APD) infrared transceiver |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4470143A (en) * | 1981-08-18 | 1984-09-04 | Nippon Electric Co., Ltd. | Semiconductor laser having an etched mirror and a narrow stripe width, with an integrated photodetector |
| JPS61152088A (ja) * | 1984-12-26 | 1986-07-10 | Canon Inc | 半導体レ−ザ |
| JPS6215878A (ja) * | 1985-07-12 | 1987-01-24 | Sharp Corp | 半導体レ−ザ装置 |
-
1989
- 1989-06-26 US US07/371,474 patent/US4947400A/en not_active Expired - Lifetime
-
1990
- 1990-04-19 CA CA002014937A patent/CA2014937C/fr not_active Expired - Lifetime
- 1990-06-15 EP EP19900306544 patent/EP0405800A3/en not_active Ceased
- 1990-06-26 JP JP2165859A patent/JPH0365621A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6602629B1 (en) | 2000-05-24 | 2003-08-05 | Eveready Battery Company, Inc. | Zero mercury air cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2014937C (fr) | 1994-11-29 |
| CA2014937A1 (fr) | 1990-12-26 |
| EP0405800A3 (en) | 1991-05-08 |
| EP0405800A2 (fr) | 1991-01-02 |
| US4947400A (en) | 1990-08-07 |
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