JPH0366107B2 - - Google Patents

Info

Publication number
JPH0366107B2
JPH0366107B2 JP57209389A JP20938982A JPH0366107B2 JP H0366107 B2 JPH0366107 B2 JP H0366107B2 JP 57209389 A JP57209389 A JP 57209389A JP 20938982 A JP20938982 A JP 20938982A JP H0366107 B2 JPH0366107 B2 JP H0366107B2
Authority
JP
Japan
Prior art keywords
wafer
wafers
polishing
flatness
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57209389A
Other languages
Japanese (ja)
Other versions
JPS59102570A (en
Inventor
Kyoshi Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57209389A priority Critical patent/JPS59102570A/en
Publication of JPS59102570A publication Critical patent/JPS59102570A/en
Publication of JPH0366107B2 publication Critical patent/JPH0366107B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、ウエハの研磨方法に係り、ウエハに
傷をつけることなく高精度の片面鏡面を得るよう
にすると共に研磨能率を向上させた研磨方法に関
する。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a wafer polishing method, and is a polishing method that obtains a highly accurate single-sided mirror surface without damaging the wafer and improves polishing efficiency. Regarding.

〔従来技術〕[Prior art]

ウエハは、半導体デバイスの高集積化と低価格
化に対応するために、高い寸法精度と大口径化が
要求されている。
Wafers are required to have high dimensional accuracy and large diameter in order to respond to higher integration and lower prices of semiconductor devices.

これまでのウエハ研磨装置は、ウエハを接着具
に貼り付け、研磨材を供給しながら回転円板上に
ウエハを貼り付けた接着工具を押し当てながらウ
エハの片面のみを研磨するようにしていた。
Conventional wafer polishing equipment attaches the wafer to an adhesive tool, and polishes only one side of the wafer by pressing the adhesive tool with the wafer attached onto a rotating disk while supplying an abrasive material.

しかしながら高い寸法精度と大口径化にある現
状において、接着工具へのウエハの貼り付け精度
が、要求される精度に対応できなくなり、これに
代るものとして貼り付け工程をなくした両面研磨
装置が開発されている。
However, in the current state of high dimensional accuracy and larger diameters, the accuracy of attaching wafers to adhesive tools can no longer meet the required accuracy, and as an alternative, a double-sided polishing machine that eliminates the attaching process has been developed. has been done.

この両面研磨装置によつて研磨されたウエハ
は、その両面が研磨されるので、これまで片面の
みを研磨してきた半導体の製造工程に対し新らた
な問題が発生するという技術的な問題が生じた。
Since both sides of the wafer polished by this double-sided polishing device are polished, a new technical problem arises in the semiconductor manufacturing process that has traditionally polished only one side. Ta.

これを解決する一つの方策として、ウエハを2
枚重ねにして、ウエハの片面のみを研磨すること
が行なわれている。
One way to solve this problem is to use two wafers.
Wafers are stacked and only one side of the wafers is polished.

先ず詳細な説明をするに当つて、両面研磨装置
の概要を第1図に用いて説明する。図において、
被加工物であるウエハ1は、キヤリヤ2の空孔部
に装着される。このようにキヤリヤ2に装着され
たウエハ1は、上定盤3と下定盤4のそれぞれに
貼設された弾性体の不織布5に挾まれている。又
キヤリヤ2は、内周のセンターギヤ6と外周のイ
ンターナルギヤ7の歯車間に保持され、駆動軸8
によつて、上下定盤3,4及びキヤリヤ2は、回
転させられ、空孔部9より供給される研磨剤によ
つて、ウエハ1の両面が研磨されるものである。
First, in giving a detailed explanation, an outline of the double-sided polishing apparatus will be explained using FIG. 1. In the figure,
A wafer 1, which is a workpiece, is mounted in a cavity of a carrier 2. The wafer 1 mounted on the carrier 2 in this manner is sandwiched between elastic nonwoven fabrics 5 attached to each of the upper surface plate 3 and the lower surface plate 4. The carrier 2 is held between the gears of a center gear 6 on the inner periphery and an internal gear 7 on the outer periphery, and is connected to a drive shaft 8.
Accordingly, the upper and lower surface plates 3 and 4 and the carrier 2 are rotated, and both surfaces of the wafer 1 are polished by the polishing agent supplied from the cavity 9.

この両面研磨装置において、第1図に示すよう
に、ウエハ1を単に2枚重ねにして研磨した場合
は、重ね合せられたウエハ1間に、研磨剤の液層
が入り込んで、2枚のウエハが回転し、ウエハの
合せ面が磨かれることになる。更にはウエハの合
せ面に異物が混入して、その合せ面にスクラツチ
等の傷ができるという問題がある。
In this double-sided polishing apparatus, when two wafers 1 are simply stacked and polished as shown in FIG. 1, a liquid layer of abrasive enters between the stacked wafers 1 and the two wafers rotates, and the mating surfaces of the wafers are polished. Furthermore, there is a problem in that foreign matter gets mixed into the mating surfaces of the wafers, causing scratches and other flaws on the mating surfaces.

又第2図に示すように、キヤリヤ2のウエハ装
着部の両面に凹穴を設け、この凹穴にウエハを嵌
着してウエハの片面のみを研磨することが考えら
れるが、この場合は、キヤリヤ2の回転によつ
て、凹穴部からウエハが飛び出してしまいウエハ
を破損してしまうという問題がある。
Also, as shown in FIG. 2, it is conceivable to provide recessed holes on both sides of the wafer mounting portion of the carrier 2, and to polish only one side of the wafer by fitting the wafer into the recessed holes, but in this case, There is a problem in that the rotation of the carrier 2 causes the wafer to fly out of the recessed hole, resulting in damage to the wafer.

又第3図に示すように、キヤリヤ2の空孔部に
ウエハを一枚づつ保持し、(この場合は、ウエハ
の両面が研磨される)研磨する場合は、キヤリヤ
2の厚さをウエハの厚さよりも薄くする必要があ
るので、キヤリヤ2の歯先も薄くなり歯先の強度
が低下する。
In addition, as shown in FIG. 3, when polishing is performed by holding wafers one by one in the cavity of the carrier 2 (in this case, both sides of the wafer are polished), the thickness of the carrier 2 is adjusted to the thickness of the wafer. Since it is necessary to make the carrier 2 thinner than the thickness, the tooth tip of the carrier 2 also becomes thinner and the strength of the tooth tip decreases.

その結果、研磨圧を高くして研磨能率を上げよ
うとする場合、歯先の強度に制限があつて研磨圧
を上げることができず、これと相俟つて、キヤリ
ヤに装着されるウエハの枚数も制限されることに
なり、研磨能率が低下するという問題があつた。
As a result, when trying to increase the polishing efficiency by increasing the polishing pressure, the strength of the tooth tips is limited, making it impossible to increase the polishing pressure. There was also a problem that the polishing efficiency was lowered.

〔発明の目的〕[Purpose of the invention]

本発明は、上記技術的な問題点をことごとく解
決した、ウエハの研磨方法を提供せんとするもの
である。
The present invention aims to provide a wafer polishing method that solves all of the above technical problems.

〔発明の概要〕[Summary of the invention]

即ち本発明は、2枚のウエハを高精度の平面度
に保持させながら接着し、これを両面研磨装置の
キヤリヤに装着し研磨した後、この二枚のウエハ
を分離し、片面のみが研磨されたウエハを得るよ
うにしたものであり、ウエハの平面度を保持しな
がらウエハを加熱し、次にこのウエハに接着剤を
添加し、更にこのウエハ上に別のウエハを重ね合
せて圧着し、このように圧着された二枚のウエハ
を平面度を保持しながら冷却して二枚一体とした
ウエハを形成し、このウエハを両面研磨装置にて
研磨した後、接着剤溶融液中で、接着剤を加熱溶
融し2枚のウエハを分離したことを特徴とする。
That is, in the present invention, two wafers are bonded together while maintaining highly accurate flatness, and after this is mounted on a carrier of a double-sided polishing machine and polished, the two wafers are separated so that only one side is polished. The wafer is heated while maintaining its flatness, then an adhesive is added to this wafer, and another wafer is placed on top of this wafer and pressure bonded. The two wafers crimped together in this way are cooled while maintaining their flatness to form a two-piece wafer, which is then polished using a double-sided polishing machine and then bonded together in an adhesive melt. The method is characterized in that the two wafers are separated by heating and melting the agent.

〔発明の実施例〕[Embodiments of the invention]

以下本発明の一実施例について詳細に説明す
る。二枚のウエハは、ワツクス或は、クロス粘着
液によつて接着する。即ち第5図において、1図
は、ウエハ15,16の合せ面にワツクス10を
介在させて接着したもの、2図は、ウエハ15,
16の中心部にのみワツクス10を介在させ接着
したもの、3図は、クロス11の吸着力を利用し
てウエハ15,16を接着したものである。
An embodiment of the present invention will be described in detail below. The two wafers are bonded together using wax or cross adhesive. That is, in FIG. 5, FIG. 1 shows wafers 15 and 16 bonded together with wax 10 interposed between them, and FIG. 2 shows wafers 15 and 16 bonded together.
In the case shown in FIG. 3, the wafers 15 and 16 are bonded together using the suction force of the cloth 11. In the case shown in FIG.

上記接着工程について、第6図を用いて説明す
る。この接着工程には、それぞれ高い平面度を有
する加熱板12と、重り13及び、冷却板14が
使用される。
The above bonding process will be explained using FIG. 6. In this bonding process, a heating plate 12, a weight 13, and a cooling plate 14 each having a high degree of flatness are used.

先ず、ウエハ15は、加熱板12上で高い平面
度を保持しながら加熱される。このように加熱さ
れているウエハ15上にワツクス10を少量滴下
する。次にこの上に更に別のウエハ16を重ね合
せ、重り13により圧接する。このようにして圧
接することにより、ワツクス10は、均一な厚さ
となつて、ウエハ15と16の間にワツクス10
の層を形成する。次にこれを冷却板14によつて
挾み、ウエハ15と16を同時冷却することによ
りワツクス10を中間層とする2枚1体の高い平
面度を有するウエハが形成される。
First, the wafer 15 is heated on the heating plate 12 while maintaining high flatness. A small amount of wax 10 is dropped onto the wafer 15 heated in this manner. Next, another wafer 16 is placed on top of this and pressed against it by the weight 13. By pressing the wafers 15 and 16 in this manner, the wax 10 has a uniform thickness, and the wax 10 is formed between the wafers 15 and 16.
form a layer. Next, this is sandwiched between cooling plates 14 and wafers 15 and 16 are simultaneously cooled, thereby forming two wafers each having high flatness and having wax 10 as an intermediate layer.

この2枚一体にされたウエハを、両面研磨装置
で研磨した後、トリクレン等の溶液中で加熱し、
ウエハを分離し、片面研磨のウエハを得る。
After polishing these two integrated wafers with a double-sided polishing machine, they are heated in a solution such as trichloride,
Separate the wafers to obtain single-sided polished wafers.

以上のように構成した本実施例の作用を次に説
明する。先ず高い平面度を有する加熱板12の上
でウエハ15を加熱し、この上にワツクス10を
少量滴下し、この上に別のウエハ16を重ねて高
い平面度を有する重り13によつて圧接すること
により、ワツクス10は、ウエハ15の熱によつ
て溶けながら、2枚のウエハ15,16の間に均
一な層となつて伸ばされる。この状態で次に、ウ
エハ15,16を高い平面度を有する冷却板14
によつて同時に冷却することにより、ウエハ1
5,16及びワツクス10相互間には、熱歪を生
じさせることなく冷却固化する。このように固化
するとワツクス10を中間層とした高い平面度の
ウエハとなる。つまり、2枚のウエハ15,16
とワツクス層10の合計厚みをもつた、一枚のウ
エハとなる。
The operation of this embodiment configured as above will be explained next. First, a wafer 15 is heated on a heating plate 12 having a high degree of flatness, a small amount of wax 10 is dropped onto the wafer 15, and another wafer 16 is placed on top of this and pressed by a weight 13 having a high degree of flatness. As a result, the wax 10 is spread as a uniform layer between the two wafers 15 and 16 while being melted by the heat of the wafer 15. In this state, next, the wafers 15 and 16 are placed on a cooling plate 14 having a high degree of flatness.
By simultaneously cooling the wafer 1 by
5, 16 and the wax 10 are cooled and solidified without causing thermal distortion. When solidified in this manner, a wafer with high flatness is formed with the wax 10 as an intermediate layer. In other words, two wafers 15 and 16
The total thickness of the wax layer 10 becomes one wafer.

このウエハ15,16を第4図に示すように、
キヤリア2の空孔部に装着する。
As shown in FIG. 4, these wafers 15 and 16 are
Attach it to the hole in carrier 2.

この場合、装着されるウエハの厚みが、厚いの
で、キヤリヤ2の厚さも充分厚い構造にすること
ができ、キヤリア2の歯先強度も充分強いものと
することが可能である。
In this case, since the wafer to be mounted is thick, the carrier 2 can have a sufficiently thick structure, and the tooth tip strength of the carrier 2 can also be made sufficiently strong.

従つて、キヤリア2の空孔部を多数設け、この
空孔部に多数のウエハを装着し、上下定盤3,4
の挾持力(研磨圧)を大きくして研磨する。又空
孔部9から供給される遊離砥粒を含む研磨剤は、
2枚のウエハ15,16がワツクス層10を介し
て一体になつており、浸入しない。又たとえ浸入
しても、ワツクス層10によつて保護されウエハ
15,16の合せ面での研磨は起らない。
Therefore, a large number of holes are provided in the carrier 2, a large number of wafers are mounted in the holes, and the upper and lower surface plates 3, 4 are mounted.
Polish by increasing the clamping force (polishing pressure). In addition, the abrasive containing free abrasive grains supplied from the cavity 9 is
The two wafers 15 and 16 are integrated with the wax layer 10 in between, so that no penetration occurs. Further, even if it penetrates, it is protected by the wax layer 10 and polishing does not occur on the mating surfaces of the wafers 15 and 16.

このようにして研磨した後、ウエハを取り出
し、トリクレン等の溶液中で加熱し、2枚のウエ
ハ15,16を分離する。
After polishing in this manner, the wafer is taken out and heated in a solution such as trichloride to separate the two wafers 15 and 16.

上記説明は、接着剤としてワツクスを例にして
述べたが、クロス粘着液を用いても同様の作用を
得ることができる。
Although the above explanation has been made using wax as an example of the adhesive, the same effect can be obtained by using a cross adhesive liquid.

〔発明の効果〕〔Effect of the invention〕

以上詳述した通り、本発明のウエハ研磨方法に
よれば、ウエハの平面度を保持しながら加熱し、
このウエハ上に接着剤を添加し、別のウエハをこ
の上に重ね合せ、平面度を保ちながら圧接するこ
とにより、接着剤は、ウエハの熱によつて溶融し
ながら平均に伸ばされ、2枚のウエハ間に均一の
中間層を形成することができる。このようにして
中間層を有し一体化した2枚のウエハを、平面度
を保ちながら同時に冷却することにより、相互間
の熱歪を防止し、高い平面度を有する一体化され
た複合ウエハを得ることができる。
As detailed above, according to the wafer polishing method of the present invention, the wafer is heated while maintaining its flatness,
By adding an adhesive onto this wafer, placing another wafer on top of it, and pressing it together while maintaining flatness, the adhesive is melted by the heat of the wafer and stretched evenly, resulting in two wafers. A uniform intermediate layer can be formed between the wafers. By simultaneously cooling the two integrated wafers with intermediate layers while maintaining their flatness, thermal distortion between them can be prevented and an integrated composite wafer with high flatness can be created. Obtainable.

このようにして作られた複合ウエハを、両面研
磨装置で研磨する際に、キヤリアの厚みを厚くし
てその強度を充分上げることができるので多数の
ウエハを一度に多数装着することができると共
に、研磨圧を大きくして研磨することができ、研
磨能率を大巾に向上させることができる。
When polishing composite wafers made in this way using a double-sided polishing machine, the thickness of the carrier can be increased to sufficiently increase its strength, so a large number of wafers can be mounted at once, and Polishing can be performed with increased polishing pressure, and polishing efficiency can be greatly improved.

更に、2枚のウエハの合せ面に接着剤による中
間層を形成したので、この中間層によつて合せ面
が保護されて、研磨されることなく、又たとえ異
物が介入しても傷が付かず、片面のみ研磨された
品質の高いウエハを得ることができるなどの優れ
た効果を奏する。
Furthermore, since an intermediate layer of adhesive is formed on the mating surfaces of the two wafers, this intermediate layer protects the mating surfaces and prevents them from being polished and from being scratched even if foreign matter intervenes. It has excellent effects such as being able to obtain high-quality wafers that are polished on only one side.

【図面の簡単な説明】[Brief explanation of drawings]

第1図乃至第3図は、両面研磨装置を用いた従
来の研磨方法を断面して示した図、第4図は両面
研磨装置を用いた本実施例の研磨方法を示した
図、第5図は、本実施例における2枚のウエハを
重ね合せた状態を示す図、第6図は、接着剤にワ
ツクスを使用して、2枚のウエハを重ね合せ固定
化する工程を示す図である。 2……キヤリア、3……上定盤、4……下定
盤、5……不織布、6……センターギア、7……
インターナルギア、10……ワツクス、11……
クロス、12……加熱板、13……重り、14…
…冷却板、15,16……ウエハ。
1 to 3 are cross-sectional views of a conventional polishing method using a double-sided polishing device, FIG. 4 is a diagram showing the polishing method of this embodiment using a double-sided polishing device, and FIG. The figure shows the state in which two wafers are stacked in this example, and FIG. 6 is a diagram showing the process of stacking and fixing the two wafers using wax as an adhesive. . 2...Carrier, 3...Upper surface plate, 4...Lower surface plate, 5...Nonwoven fabric, 6...Center gear, 7...
Internal Gear, 10... Wax, 11...
Cross, 12... Heating plate, 13... Weight, 14...
...cooling plate, 15, 16...wafer.

Claims (1)

【特許請求の範囲】[Claims] 1 ウエハの平面度を保持しながらウエハを加熱
し、次にこのウエハ上に接着材を添加し、更にこ
のウエハ上に別のウエハを重ねて圧着し、このよ
うに圧着された2枚のウエハを平面度を保持しな
がら2枚同時に冷却して二枚一体としたウエハを
形成し、このウエハを両面研磨装置にて研磨した
後、接着剤溶融液中で加熱溶融し、2枚のウエハ
を分離するようにしたことを特徴とするウエハの
研磨方法。
1. Heat the wafer while maintaining its flatness, then add an adhesive onto this wafer, then stack another wafer on top of this wafer and press-bond it, and the two wafers bonded in this way The two wafers are simultaneously cooled while maintaining their flatness to form two integrated wafers, and this wafer is polished using a double-sided polishing machine, and then heated and melted in an adhesive melt to form the two wafers. A method for polishing a wafer, characterized by separating the wafer.
JP57209389A 1982-12-01 1982-12-01 Wafer polishing method Granted JPS59102570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57209389A JPS59102570A (en) 1982-12-01 1982-12-01 Wafer polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57209389A JPS59102570A (en) 1982-12-01 1982-12-01 Wafer polishing method

Publications (2)

Publication Number Publication Date
JPS59102570A JPS59102570A (en) 1984-06-13
JPH0366107B2 true JPH0366107B2 (en) 1991-10-16

Family

ID=16572092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57209389A Granted JPS59102570A (en) 1982-12-01 1982-12-01 Wafer polishing method

Country Status (1)

Country Link
JP (1) JPS59102570A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61230865A (en) * 1985-04-05 1986-10-15 Mitsui Mining & Smelting Co Ltd Two side polishing machine

Also Published As

Publication number Publication date
JPS59102570A (en) 1984-06-13

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