JPH036647B2 - - Google Patents
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- Publication number
- JPH036647B2 JPH036647B2 JP28471585A JP28471585A JPH036647B2 JP H036647 B2 JPH036647 B2 JP H036647B2 JP 28471585 A JP28471585 A JP 28471585A JP 28471585 A JP28471585 A JP 28471585A JP H036647 B2 JPH036647 B2 JP H036647B2
- Authority
- JP
- Japan
- Prior art keywords
- foil
- etching
- cathode
- weight
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000011888 foil Substances 0.000 claims description 42
- 239000002344 surface layer Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Chemical Treatment Of Metals (AREA)
- ing And Chemical Polishing (AREA)
Description
産業上の利用分野
本発明は、電解コンデンサ陰極用アルミニウム
箔に関する。
従来技術とその問題点
電解コンデンサ陰極用アルミニウム箔(以下単
に陰極箔という)としては、化学エツチング等の
エツチングにより表面積を容易に拡大し得るとこ
ろから、Cuを0.1〜0.5重量%添加したAl合金箔が
広く使用されている(特公昭44−25016号公報)。
近年、陽極箔の静電容量が著るしく向上するにし
たがつて、陰極箔の容量向上も必要となつてお
り、より均一で微細なエツチングが可能である
Al箔の出現が望まれている。この様な条件を充
足するには、Al箔は、エツチング操作時のピツ
テイング開始点を多数有するとともに箔強度に優
れていることが必要である。更に、現行の陰極箔
においては、エツチング後に調質を行なうと酸化
皮膜が厚くなつて容量が低下することがあるた
め、エツチング前に焼鈍による調質を行なう場合
が多い。しかしながら、この場合には、焼鈍時に
生成する箔表面の酸化皮膜が強固であるため、化
学反応性が低下する。従つて、エツチングに先立
つて前処理を行ない、表面を活性化させた後、エ
ツチングを行なつている。このため、エツチング
ラインが複雑となり、製造コストが増大してい
る。又、製箔に際しても、酸化皮膜が均一にでき
るだけ薄く形成される様に酸素濃度が最も低い工
程で焼鈍を行なうなどの工夫を行なつている。
問題点を解決するための手段
本発明者は、上記の如き現行技術の問題に鑑み
て鋭意研究を重ねた結果、特定量のCuを含有し、
且つ表層部分に高濃度のMgを含有するAl箔が陰
極箔における問題点を実質的に解消若しくは大巾
に軽減し得ることを見出した。即ち、本発明は、
Cu0.1〜0.7%を含有し、残部Al及び不可避不純物
からなる電解コンデンサ陰極用アルミニウム箔に
おいて、表面から2μmまでの表層部分にMgが0.3
〜30%の濃度で偏在し、内層部分にMgが0.3〜%
以上存在しないことを特徴とする電解コンデンサ
陰極用アルミニウム箔に係る。
本発明においては、Cuと表層部分に偏在する
Mgとが相乗的に作用して顕著な効果を奏するの
で、夫々の含有量と効果との関係を個々に論ずる
ことは必ずしも妥当ではないが、含有量の規定根
拠を強いて示せば以下の通りである。先ず、Al
マトリツクスの電位を高めて、化学溶解性を著る
しく促進するためのCu含有量は、0.1〜0.7重量%
とする。Cu含有量が0.1重量%未満の場合には、
所望の効果が十分に得られないのに対し、0.7重
量%を上回る場合には、溶解性が過大となる。酸
化皮膜を含む表面から2μmまでの表層部分にMg
が0.3〜30重量%の濃度で偏在する場合には、酸
化皮膜の耐食性を低下させるので、エツチングに
先立つて前処理を行なわなくとも、エツチング開
始点が増大する。表層部分のMgの濃度が0.3重量
%未満では、所望の効果が十分に達成されず、一
方30重量%を上回る場合には、全面エツチングさ
れて有効なエツチングピツトが得られなくなるほ
か、箔の巻き戻しが不可能となるまで箔が密着す
ることがある。Mgの濃度は、0.5〜10重量%とす
ることがより好ましい。Al箔の内層部分は、エ
ツチド箔本体となるので、そのMg含有量はエツ
チング特性、耐析強度、コンデンサの電気的特性
等に実質上影響しない量、より詳しくは0.3重量
%以下に、さらに好ましくは0.1重量%以下に制
御する。Mgを表層部分に偏在させる方法とし
て、鋳造時に添加して、あるいは蒸着もしくはイ
オンプレーテイングして、その后に焼鈍する方法
等がある。なお、焼鈍時の温度が高い程Mgが箔
表面に高度に濃縮されるとともに酸化皮膜も厚く
なるので、Mgをできるだけ濃縮させつつ且つ酸
化皮膜の厚さをできるだけ薄くする様に留意しつ
つ焼鈍を行なうことが望ましい。
本発明の陰極箔は、後述する参考図面2に示す
ように結晶粒界のみならず粒内でもエツチングさ
れており、より均一にエツチングされる特徴を持
つている。従つて、エツチド箔の静電容量が大巾
に向上すると共に、局部的なエツチングの進行が
抑えらえ、エツチド箔の強度も向上する。
なお、本発明の陰極箔は、陰極箔用Al地金に
通常含まれている不可避不純物を含んでいても良
い。例えば、通常0.05〜0.8重量%程度含まれて
いるFeは、陰極箔の性能にはあまり影響せず、
むしろ箔強度を向上させ且つ化学溶解性を促進す
る。又、通常0.05〜0.5重量%程度含まれているSi
も、陰極箔の性能に影響しない。
発明の効果
本発明によるアルミニウム箔は、次の様な顕著
な効果を奏する。
(1) 表層部分の偏在する高濃度Mgが、酸化皮膜
の欠陥部を増大させるので、エツチング液によ
る浸食速度が大となり且つピツテング開始点も
増大する。
(2) 上記の結果、エツチング時の反応が速やかに
進行して高い表面拡大率が得られるので、エツ
チング前の予備処理による表面活性化が不用と
なつた。
(3) 陰極箔としての静電容量が大きい。
(4) 強度が大である。
実施例
以下実施例を示し、本発明の特徴とするところ
をより一層明らかにする。
実施例 1
一次電解Al地金にCuを添加して得たAl合金を
鋳造し、熱間圧延及び冷間圧延により厚さ60μm
のAl箔とした。得られた箔の両面に金属Mgの真
空蒸着を行ない、それぞれ蒸着時間が異なる8種
類のAl箔を用意した。次いで、400℃で6時間真
空焼鈍を行なつた後放冷したAl箔を10%HCl浴
に温度100℃で15秒間浸漬して化学エツチングし
た。
次いで、5%ホウ酸液中で3Vの化成を行なつ
た後、LCRメーター〔横河電機(株)製〕により8
%ホウ酸アンモニウム液中で静電容量の測定を行
なつた。
結果を試料No.1〜8として第1表に示す。
なお、表層部分の厚さは、濃硝酸:純水=1:
2容積比の水溶液に浸漬したときの箔の減量から
求めた。この際、Al箔を100mm×100mmの大きさ
に切り取り、約0.054gの減量(2μmの厚さに相
当)となるまで上記水溶液に浸漬した。また、表
層部分のMgの濃度は、その溶出液の原子吸光分
析を行なつて求めた。
実施例 2
実施例1とな異なる一次電解Al地金に異なる
両のCuを添加する(但し、試料No.9は無添加)
以外は実施例1と同様にしてAl箔を製造し、Mg
を蒸着し(但し、No.9、No.11〜13及びNo.17〜19を
除く)、化学エツチングを行ない、静電容量を測
定した。
結果を試料No.9〜22として第1表に示す。
INDUSTRIAL APPLICATION FIELD The present invention relates to an aluminum foil for an electrolytic capacitor cathode. Conventional technology and its problems As aluminum foil for electrolytic capacitor cathode (hereinafter simply referred to as cathode foil), Al alloy foil containing 0.1 to 0.5% by weight of Cu is used because the surface area can be easily expanded by etching such as chemical etching. is widely used (Special Publication No. 44-25016).
In recent years, as the capacitance of anode foils has improved significantly, it has also become necessary to improve the capacitance of cathode foils, making it possible to perform more uniform and finer etching.
It is hoped that Al foil will emerge. In order to satisfy these conditions, the Al foil must have a large number of starting points for pitting during the etching operation and must have excellent foil strength. Furthermore, in current cathode foils, if tempering is performed after etching, the oxide film may become thicker and the capacity may decrease, so tempering by annealing is often performed before etching. However, in this case, the oxide film formed on the surface of the foil during annealing is strong, resulting in a decrease in chemical reactivity. Therefore, prior to etching, pretreatment is performed to activate the surface, and then etching is performed. For this reason, the etching line becomes complicated and the manufacturing cost increases. In addition, when producing foil, we take measures such as performing annealing at the step with the lowest oxygen concentration so that the oxide film is formed as uniformly and as thinly as possible. Means for Solving the Problems As a result of intensive research in view of the problems of the current technology as described above, the present inventor has discovered that a method containing a specific amount of Cu,
We have also found that Al foil containing a high concentration of Mg in the surface layer can substantially eliminate or greatly reduce the problems with cathode foils. That is, the present invention
In an aluminum foil for an electrolytic capacitor cathode containing 0.1 to 0.7% Cu and the remainder Al and unavoidable impurities, Mg is 0.3% in the surface layer up to 2 μm from the surface.
Mg is unevenly distributed at a concentration of ~30%, and Mg is 0.3~% in the inner layer.
The present invention relates to an aluminum foil for an electrolytic capacitor cathode, which is characterized in that it does not contain any of the above. In the present invention, Cu is unevenly distributed in the surface layer.
Since Mg and Mg act synergistically to produce a remarkable effect, it is not necessarily appropriate to discuss the relationship between each content and effect individually, but if we force the basis for specifying the content, it is as follows. be. First, Al
The Cu content is 0.1-0.7% by weight to increase the potential of the matrix and significantly promote chemical solubility.
shall be. If the Cu content is less than 0.1% by weight,
On the other hand, if the amount exceeds 0.7% by weight, the desired effect will not be sufficiently obtained, whereas the solubility will be excessive. Mg in the surface layer up to 2μm from the surface including the oxide film
If it is unevenly distributed at a concentration of 0.3 to 30% by weight, it will reduce the corrosion resistance of the oxide film, so the etching starting point will increase even if no pretreatment is performed prior to etching. If the concentration of Mg in the surface layer is less than 0.3% by weight, the desired effect will not be fully achieved, while if it exceeds 30% by weight, the entire surface will be etched and effective etching pits will not be obtained, and the foil will not be rewound. The foil may adhere to the point where it is no longer possible. The concentration of Mg is more preferably 0.5 to 10% by weight. Since the inner layer portion of the Al foil becomes the etched foil body, the Mg content is preferably set to an amount that does not substantially affect the etching properties, precipitation resistance, electrical characteristics of the capacitor, etc., more specifically, 0.3% by weight or less. is controlled to 0.1% by weight or less. Methods for unevenly distributing Mg in the surface layer include adding it during casting, vapor deposition or ion plating, and then annealing. Note that the higher the temperature during annealing, the more concentrated Mg will be on the foil surface, and the thicker the oxide film will be. Therefore, annealing should be carried out while paying attention to concentrating Mg as much as possible and making the thickness of the oxide film as thin as possible. It is desirable to do so. The cathode foil of the present invention is etched not only at the grain boundaries but also within the grains, as shown in Reference Drawing 2, which will be described later, and is characterized by more uniform etching. Therefore, the capacitance of the etched foil is greatly improved, the progress of local etching is suppressed, and the strength of the etched foil is also improved. Note that the cathode foil of the present invention may contain unavoidable impurities that are normally contained in Al base metal for cathode foil. For example, Fe, which is normally contained at about 0.05 to 0.8% by weight, does not have much effect on the performance of the cathode foil.
Rather, it improves foil strength and promotes chemical solubility. In addition, Si, which usually contains about 0.05 to 0.5% by weight,
also does not affect the performance of the cathode foil. Effects of the Invention The aluminum foil according to the present invention has the following remarkable effects. (1) The highly concentrated Mg unevenly distributed in the surface layer increases the number of defects in the oxide film, increasing the rate of erosion by the etching solution and increasing the pitting starting point. (2) As a result of the above, the reaction during etching proceeds rapidly and a high surface enlargement ratio is obtained, so surface activation by pretreatment before etching is no longer necessary. (3) Large capacitance as a cathode foil. (4) It has great strength. Examples Examples will be shown below to further clarify the features of the present invention. Example 1 An Al alloy obtained by adding Cu to a primary electrolytic Al ingot was cast, and hot rolled and cold rolled to a thickness of 60 μm.
It was made of Al foil. Metal Mg was vacuum-deposited on both sides of the obtained foil, and eight types of Al foils were prepared, each having a different deposition time. Next, the Al foil, which had been vacuum annealed at 400°C for 6 hours and then allowed to cool, was chemically etched by immersing it in a 10% HCl bath at a temperature of 100°C for 15 seconds. Next, after performing chemical conversion at 3V in a 5% boric acid solution, the
% ammonium borate solution. The results are shown in Table 1 as samples No. 1 to 8. In addition, the thickness of the surface layer is concentrated nitric acid: pure water = 1:
It was determined from the weight loss of the foil when immersed in an aqueous solution with a 2 volume ratio. At this time, the Al foil was cut into a size of 100 mm x 100 mm and immersed in the above aqueous solution until the weight loss was about 0.054 g (corresponding to a thickness of 2 μm). Furthermore, the concentration of Mg in the surface layer was determined by performing atomic absorption spectrometry of the eluate. Example 2 Different types of Cu are added to a different primary electrolytic Al ingot from Example 1 (however, sample No. 9 has no addition)
Except for this, Al foil was produced in the same manner as in Example 1, and Mg
(However, Nos. 9, 11 to 13, and 17 to 19 were excluded), chemical etching was performed, and the capacitance was measured. The results are shown in Table 1 as samples No. 9 to 22.
【表】
第1表に示す結果から、本発明陰極箔(試料No.
3〜7、No.14〜16及びNo.20〜22)が大なる静電容
量を有していることが明らかである。
参考までに、試料No.1と試料No.4のそれぞれの
エツチド箔について表面の走査電子顕微鏡写真を
参考図面及び(倍率1000倍)として示す。写
真から、試料No.1は結晶粒界のみがエツチングさ
れているのに対し、試料No.4は粒界及び粒内がエ
ツチングされていることが明らかである。[Table] From the results shown in Table 1, the cathode foil of the present invention (sample No.
It is clear that Nos. 3 to 7, Nos. 14 to 16, and Nos. 20 to 22) have large capacitances. For reference, scanning electron micrographs of the surfaces of the etched foils of Sample No. 1 and Sample No. 4 are shown as a reference drawing and (1000x magnification). From the photographs, it is clear that in sample No. 1, only the grain boundaries are etched, whereas in sample No. 4, the grain boundaries and inside the grains are etched.
Claims (1)
純物からなる電解コンデンサ陰極用アルミニウム
箔において、表面から2μmまでの表層部分にMg
が0.3〜30%の濃度で偏在し、内層部分にはMgが
0.3%以上存在しないことを特徴とする電解コン
デンサ陰極用アルミニウム箔。1. In aluminum foil for electrolytic capacitor cathodes containing 0.1 to 0.7% Cu and the remainder Al and unavoidable impurities, Mg is added to the surface layer up to 2 μm from the surface.
is unevenly distributed at a concentration of 0.3 to 30%, and Mg is present in the inner layer.
Aluminum foil for electrolytic capacitor cathode, characterized in that it does not contain more than 0.3%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28471585A JPS62142309A (en) | 1985-12-17 | 1985-12-17 | Aluminum foil for electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28471585A JPS62142309A (en) | 1985-12-17 | 1985-12-17 | Aluminum foil for electrolytic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62142309A JPS62142309A (en) | 1987-06-25 |
| JPH036647B2 true JPH036647B2 (en) | 1991-01-30 |
Family
ID=17682041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28471585A Granted JPS62142309A (en) | 1985-12-17 | 1985-12-17 | Aluminum foil for electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62142309A (en) |
-
1985
- 1985-12-17 JP JP28471585A patent/JPS62142309A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62142309A (en) | 1987-06-25 |
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|---|---|---|---|
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