JPH036653B2 - - Google Patents
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- Publication number
- JPH036653B2 JPH036653B2 JP59183728A JP18372884A JPH036653B2 JP H036653 B2 JPH036653 B2 JP H036653B2 JP 59183728 A JP59183728 A JP 59183728A JP 18372884 A JP18372884 A JP 18372884A JP H036653 B2 JPH036653 B2 JP H036653B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- thin film
- raw material
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
- H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
Landscapes
- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、化学気相成長法（CVD）により基
板表面上に薄膜を成長させる薄膜形成方法に係わ
り、特に吸着促進剤を用いた薄膜形成方法に関す
る。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a thin film forming method for growing a thin film on a substrate surface by chemical vapor deposition (CVD), and particularly to a thin film forming method using an adsorption promoter. Regarding.
近年、薄膜形成方法の一つとしてCVD法が注
目されている。このCVD法では、原料ガスを光
照射或いは放電加熱等の手段により励起し、分
解、酸化、窒化の化学反応により不揮発性の物質
を生成する。この不揮発性物質が気相中で基板表
面上に堆積することにより薄膜が形成されること
になる。そして、大量の基板上に同時に薄膜を形
成することが可能で、集積回路や太陽電池等の半
導体装置の製造には欠かすことのできない技術と
なつている。
In recent years, the CVD method has attracted attention as one of the methods for forming thin films. In this CVD method, raw material gas is excited by means such as light irradiation or discharge heating, and nonvolatile substances are generated through chemical reactions such as decomposition, oxidation, and nitridation. A thin film is formed by depositing this nonvolatile substance on the substrate surface in a gas phase. Furthermore, it is possible to simultaneously form thin films on a large number of substrates, making it an indispensable technology for manufacturing semiconductor devices such as integrated circuits and solar cells.
ところで、CVDにおける化学反応は、気相中
で進行する場合（以下気相反応と称する）と基板
表面上で進行する場合（以下表面反応と称する）
との２つに分けられる。気相反応の場合、生成物
の一部は基板上に堆積するが、大部分は排気と共
に系外に失われるので、堆積速度及び堆積効率が
小さい。さらに、既に反応が終了して活性を失つ
た生成物が堆積するために、基板との密着性や膜
の強度が低くなる。一方、表面反応の場合、生成
物の大部分が基板上に堆積することになり、堆積
速度及び堆積効率共に大きいものとなる。しかし
ながら、CVDにおける表面反応は気相反応に比
してその比率が極めて小さい。このため、全体と
して見ると薄膜の堆積速度は遅いものであつた。 By the way, chemical reactions in CVD proceed either in the gas phase (hereinafter referred to as gas phase reaction) or on the substrate surface (hereinafter referred to as surface reaction).
It can be divided into two parts. In the case of a gas phase reaction, a part of the product is deposited on the substrate, but most of it is lost to the outside of the system with the exhaust gas, so the deposition rate and efficiency are low. Furthermore, since the reaction has already finished and the products have lost their activity, they are deposited, which lowers the adhesion to the substrate and the strength of the film. On the other hand, in the case of a surface reaction, most of the product will be deposited on the substrate, resulting in a high deposition rate and high deposition efficiency. However, the ratio of surface reactions in CVD is extremely small compared to gas phase reactions. Therefore, overall, the deposition rate of the thin film was slow.
本発明の目的は、表面反応の気相反応に対する
比率を上げることができ、薄膜の堆積速度及び堆
積効率の向上をはかり得、且つ膜質の改善をもは
かり得る薄膜形成方法を提供することにある。
An object of the present invention is to provide a thin film forming method that can increase the ratio of surface reactions to gas phase reactions, improve the deposition rate and efficiency of thin films, and improve film quality. .
本発明の骨子は、Si基板表面において原料ガス
の親和性を高め、これにより気相反応に対する表
面反応の比率を上げることにある。
The gist of the present invention is to increase the affinity of source gas on the Si substrate surface, thereby increasing the ratio of surface reaction to gas phase reaction.
即ち本願の第１発明は、Si基板を配置した容器
内に有機シランと塩素ガスからなる混合ガスを導
入し、更にレーザ光を照射して上記Si基板上に上
記混合ガスのレーザ光照射による生成物を堆積さ
せた後、容器内に有機シラン、シラン、水素化ゲ
ルマニウム、有機ゲルマニウム類、ホスフイン、
有機ホスフイン、ボラン、有機ボラン類、アルキ
ルアルミニウム、アルカリカドミウムの１種また
は２種以上からなる原料ガスと酸素ガス、塩素ガ
スを導入し、更にレーザ光或は放電加熱により原
料ガスを活性化し、基板上に原料ガスからなる薄
膜を形成するようにしたものである。 That is, the first invention of the present application introduces a mixed gas consisting of organic silane and chlorine gas into a container in which a Si substrate is placed, and further irradiates laser light to generate the mixed gas on the Si substrate by laser light irradiation. After depositing the material, organic silane, silane, germanium hydride, organic germaniums, phosphine,
A raw material gas consisting of one or more of organic phosphine, borane, organic borane, alkyl aluminum, and alkali cadmium, oxygen gas, and chlorine gas are introduced, and the raw material gas is further activated by laser light or discharge heating to form a substrate. A thin film made of raw material gas is formed on top.
また、本願の第２発明によればSi基板の表面に
クロロエトキシトリエトキシシラン類乃至クロロ
メチルトリメチルシラン遂を塗布してから上記原
料ガスと酸素ガス、塩素ガスを容器内に導入し、
更にレーザ光或は放電加熱により原料ガスを活性
化し、基板上に原料ガスからなる薄膜を形成する
ようにしたものである。 Further, according to the second invention of the present application, after coating the surface of the Si substrate with chloroethoxytriethoxysilane or chloromethyltrimethylsilane, the raw material gas, oxygen gas, and chlorine gas are introduced into the container,
Furthermore, the source gas is activated by laser light or discharge heating to form a thin film made of the source gas on the substrate.
本願の第１発明によれば、TEOS等の有機シラ
ンと塩素ガスからなる混合ガスを導入し、更にレ
ーザ光を照射して上記Si基板上に上記混合ガスの
レーザ光照射による生成物を堆積させる。この生
成物は原料ガスに対して親和性（換言すると吸着
性）を有し、且つ原料ガスより平衡蒸気圧が低
い、例えばクロロエトキシトリエトキシシラン類
（TEOS−C1）からなるものであり、前記原料ガ
スの基板への吸着を促進せしめる吸着促進膜とし
て形成される。したがつてその後行うCVD工程
における原料ガスの表面反応を促進することがで
き、このため従来と同じ条件下（原料ガスの種類
や流量等）であつても薄膜の堆積速度及び堆積効
率を上げることができる。更に、気相反応による
堆積が相対的に少なくなることから、膜質の向上
を図ることができる。
According to the first invention of the present application, a mixed gas consisting of organic silane such as TEOS and chlorine gas is introduced, and a laser beam is further irradiated to deposit a product of the laser beam irradiation of the mixed gas on the Si substrate. . This product has an affinity for the raw material gas (in other words, adsorption) and has a lower equilibrium vapor pressure than the raw material gas, such as chloroethoxytriethoxysilane (TEOS-C1), and is It is formed as an adsorption promoting film that promotes the adsorption of source gas onto the substrate. Therefore, it is possible to promote the surface reaction of the raw material gas in the subsequent CVD process, thereby increasing the deposition rate and deposition efficiency of the thin film even under the same conditions as before (type of raw material gas, flow rate, etc.). Can be done. Furthermore, since deposition due to gas phase reactions is relatively reduced, film quality can be improved.
また、本願の第２発明によれば予めSi基板の表
面にクロロエトキシトリエトキシシランやクロメ
チルトリメチルシランを塗布しても、第１発明と
同様な効果が得られる。 Further, according to the second invention of the present application, even if chloroethoxytriethoxysilane or chloromethyltrimethylsilane is applied to the surface of the Si substrate in advance, the same effects as in the first invention can be obtained.
以下、本発明の詳細を図示の実施例によつて説
明する。
Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.
第１図は本発明の一実施例方法に使用した光
CVD装置を示す概略構成図である。図中１１は
反応容器であり、この容器１１内には試料基板１
２を載置するサセプタ１３が収容されている。ま
た、容器１１にはガス導入口１４，１５，１６が
設けられており、それぞれのガス導入口１４，１
５，１６から酸素、塩素、テトラエトキシシラン
（TEOS）が容器１１内に導入されるものとなつ
ている。さらに、容器１１にはガス排気口１７が
設けられており、このガス排気口１７から上記容
器１１内に導入されたガスが排気されるものとな
つている。 Figure 1 shows the light used in the method of one embodiment of the present invention.
FIG. 1 is a schematic configuration diagram showing a CVD apparatus. In the figure, 11 is a reaction container, and a sample substrate 1 is contained in this container 11.
A susceptor 13 on which 2 is placed is accommodated. Further, the container 11 is provided with gas introduction ports 14, 15, and 16.
5 and 16, oxygen, chlorine, and tetraethoxysilane (TEOS) are introduced into the container 11. Further, the container 11 is provided with a gas exhaust port 17, through which the gas introduced into the container 11 is exhausted.
一方、容器１１の上方には塩素ガスを解離する
ための光源１８が配置されており、この光源１８
から発した光１９は窓２０を介して容器１１内に
導光される。光照射により解離生成されたCI*は
TEOSの酸化反応の触媒として作用し、これを進
行させる。なお、上記光源１９としては、例えば
Xe−CIエキシマレーザを用い、１秒間当り80パ
ルス、平均出力2W／cm2で使用した。 On the other hand, a light source 18 for dissociating chlorine gas is arranged above the container 11.
Light 19 emitted from the container 11 is guided into the container 11 through a window 20. CI * generated by dissociation by light irradiation is
Acts as a catalyst for the oxidation reaction of TEOS, allowing it to proceed. Note that, as the light source 19, for example,
A Xe-CI excimer laser was used with 80 pulses per second and an average output of 2 W/cm 2 .
次に、上記装置を用いた薄膜形成方法について
説明する。 Next, a method for forming a thin film using the above apparatus will be explained.
まず、従来と同様に容器１１内にTEOS、O2、
CI2を同時に導入し、容器１１内の全圧力を100
［torr］として、レーザ光を照射した場合、第２
図に示す如く基板１２（例えばSi基板）上には10
〜100［Å／min］と比較的小さな速度でSiO2膜２
１が堆積した。これをSFM（走査型電子顕微鏡）
で観察したところ、第３図の写真に示す如く基板
１２上にSiOの粒子が付着した状態であるのが判
る。このような小さな堆積速度、劣悪な形状しか
得られないのは、TEOSの酸化反応が、基板表面
上ではなしに、主として気相中で進行するためで
ある。 First, as in the conventional case, TEOS, O 2 ,
CI 2 is introduced at the same time, and the total pressure inside the container 11 is reduced to 100
[torr], when the laser beam is irradiated, the second
As shown in the figure, there are 10
SiO 2 film 2 at a relatively low speed of ~100 [Å/min]
1 was deposited. This is an SFM (scanning electron microscope)
When observed, it was found that SiO particles were attached to the substrate 12, as shown in the photograph of FIG. The reason why only such a low deposition rate and poor shape can be obtained is that the oxidation reaction of TEOS mainly proceeds in the gas phase rather than on the substrate surface.
そこで、本発明者等はCVE薄膜形成に先立つ
て、TEOSとCI2との混合ガス中にレーザ光を照
射し、Si基板上に混合ガスのレーザ光照射による
生成物を堆積せしめる様にした。この堆積物は
TEOS−CI層であると考えられる。 Therefore, prior to forming a CVE thin film, the present inventors irradiated laser light into a mixed gas of TEOS and CI 2 to deposit a product of the laser light irradiation of the mixed gas on the Si substrate. This deposit is
It is considered to be the TEOS-CI layer.
このようにして、基板１２上に約100［Å］の
TEOS−CI層を配置した後、先と同様に容器１１
内にTEOS、CI2、O2を導入し、レーザ光を照射
したところ、第４図に示す如くSiO2膜２１の堆
積速度は最大600［Å］となり、TEOS−CI層がな
い場合と比較して約10倍の堆積速度が得られた。
これは、TEOS−CI層の存在により、表面反応の
比率が増大したに他ならないと考えられる。 In this way, about 100 [Å] of
After placing the TEOS-CI layer, place container 11 in the same way as before.
When TEOS, CI 2 and O 2 were introduced into the layer and irradiated with laser light, the deposition rate of the SiO 2 film 21 reached a maximum of 600 [Å] as shown in Figure 4, compared to the case without the TEOS-CI layer. Approximately 10 times faster deposition rate was obtained.
This is considered to be due to nothing but an increase in the surface reaction rate due to the presence of the TEOS-CI layer.
かくして本実施例方法によれば、TEOS−CI層
を予め基板１２上に堆積しておくことで、気相反
応に対する表面反応の比率を上げ、SiO2膜２１
の堆積速度及び堆積効率の大幅な向上をはかり得
る。さらに、気相反応により生成され容器１１外
に排気される反応生成物が少なくなるので、原料
ガスの消費量を少なくすることができる。また、
気相反応による堆積が相対的に少なくなることか
ら、膜質の向上をはかり得る等の利点がある。 Thus, according to the method of this embodiment, by depositing the TEOS-CI layer on the substrate 12 in advance, the ratio of the surface reaction to the gas phase reaction is increased, and the SiO 2 film 21
The deposition rate and deposition efficiency can be significantly improved. Furthermore, since the amount of reaction products produced by the gas phase reaction and exhausted to the outside of the container 11 is reduced, the amount of raw material gas consumed can be reduced. Also,
Since deposition due to gas phase reactions is relatively reduced, there are advantages such as improvement in film quality.
第５図は上記方法によつて堆積したSiO2膜を
SEMにより観察したときの断面組織を示す写真
である。膜自体のストレスが大であるためクラツ
クを生じているが、膜は第３図と比較して非常に
改善されていることが明らかである。なお、上記
の例では吸着促進剤としてTEOS−CIを用いた
が、この代りにクロロメチルトリメチルシランを
前記基板１２上に塗布しても同様の効果が得られ
ることが確認された。 Figure 5 shows the SiO 2 film deposited by the above method.
It is a photograph showing a cross-sectional structure when observed by SEM. Although cracks occur due to the large stress on the membrane itself, it is clear that the membrane is much improved compared to FIG. 3. Although TEOS-CI was used as the adsorption promoter in the above example, it was confirmed that the same effect could be obtained by applying chloromethyltrimethylsilane to the substrate 12 instead.
なお、上述のようにSi基板上にTEOS−CI層を
堆積した後、選択エツチングによりこのTEOS−
CI層をパターンニングし、次いで先の実施例と
同様に薄膜堆積を行つたところ、TEOS−CI層の
存在するところのみにSiO2膜を厚く堆積させる
ことができた。 Note that after depositing the TEOS-CI layer on the Si substrate as described above, this TEOS-CI layer is removed by selective etching.
When the CI layer was patterned and then thin film deposition was performed in the same manner as in the previous example, it was possible to deposit a thick SiO 2 film only in the areas where the TEOS-CI layer was present.
このように、本実施例方法ではSiO2膜２１の
堆積速度向上の効果に加え、SiO2膜２１の選択
形成が可能となる。 As described above, in addition to the effect of increasing the deposition rate of the SiO 2 film 21, the method of the present embodiment enables selective formation of the SiO 2 film 21.
なお、本発明は上述した各実施例に限定される
ものではない。例えば、前記生成物はクロロエト
キシトリエトキシシラン類やクロロメチルトリメ
チルシラン類等の有機クロロシランに限るもので
はなく、原料ガスと親和性を有し、且つ原料ガス
よりも蒸気圧の低いものであればよい。また、前
記生成物の形成方法としては、堆積、塗布、その
他を適宜選択すればよい。さらに、基板上に吸着
促進剤を形成する代りに、原料ガスに吸着促進剤
を混入するようにしてもよい。また、原料ガスは
TEOSガスに何等限定されるものではなく、基板
上に形成すべき膜の種類に応じて適宜定めればよ
い。例えば、TEOS以外の有機シラン類、シラ
ン、水素化ゲルマニウム、有機ゲルマニウム類、
ホスフイン、有機ホスフイン、ボラン、有機ボラ
ン類、アルキルアルミニウム、アルキルカドミウ
ム類等の金属化合物ガス、或いはこれらの混合ガ
スを用いることができる。また、原料ガスを活性
化する手段としては、光照射の代りに放電プラズ
マを用いることも可能である。その他、本発明の
要旨を逸脱しない範囲で、種々変形して実施する
ことができる。 Note that the present invention is not limited to the embodiments described above. For example, the product is not limited to organic chlorosilanes such as chloroethoxytriethoxysilanes and chloromethyltrimethylsilanes, but can be any product that has an affinity with the raw material gas and has a lower vapor pressure than the raw material gas. good. Further, the method for forming the product may be appropriately selected from deposition, coating, and others. Furthermore, instead of forming the adsorption promoter on the substrate, the adsorption promoter may be mixed into the raw material gas. In addition, the raw material gas is
It is not limited to TEOS gas in any way, and may be determined as appropriate depending on the type of film to be formed on the substrate. For example, organic silanes other than TEOS, silane, germanium hydride, organic germanium,
A metal compound gas such as phosphine, organic phosphine, borane, organic borane, alkyl aluminum, alkyl cadmium, or a mixed gas thereof can be used. Further, as a means for activating the source gas, it is also possible to use discharge plasma instead of light irradiation. In addition, various modifications can be made without departing from the gist of the present invention.
第１図は本発明の一実施例に使用した光CVD
装置を示す概略構成図、第２図はSiO2膜が堆積
された基板を示す断面図、第３図は従来方法によ
りSiO2膜を堆積したときのSiO2膜の表面組織を
示す顕微鏡写真、第４図は本実施例方法により
SiO2膜を堆積したときの堆積速度を示す特性図、
第５図は上記実施例方法により堆積されたSiO2
膜の断面組織を示す顕微鏡写真である。
１１……反応容器、１２……基板、１３……セ
サプタ、１４，１５，１６……ガス導入口、１７
……ガス排気口、１８……光源、１９……光、２
０……光導入部、２１……SiO2膜。
Figure 1 shows the optical CVD used in one embodiment of the present invention.
A schematic configuration diagram showing the apparatus, FIG. 2 is a cross-sectional view showing the substrate on which the SiO 2 film is deposited, and FIG . 3 is a micrograph showing the surface structure of the SiO 2 film when deposited by the conventional method. Figure 4 shows the result of this embodiment method.
Characteristic diagram showing the deposition rate when depositing SiO 2 film,
FIG. 5 shows SiO 2 deposited by the above example method.
It is a micrograph showing the cross-sectional structure of a membrane. 11... Reaction container, 12... Substrate, 13... Sesaptor, 14, 15, 16... Gas inlet, 17
...Gas exhaust port, 18...Light source, 19...Light, 2
0... Light introduction part, 21... SiO 2 film.
Claims (1)
ガスからなる混合ガスを導入し、更にレーザ光を
照射して上記Si基板上に上記混合ガスのレーザ光
照射による生成物を堆積させ、その後容器内に有
機シラン、シラン、水素化ゲルマニウム、有機ゲ
ルマニウム類、ホスフイン、有機ホスフイン、ボ
ラン、有機ボラン類、アルキルアルミニウム、ア
ルカリカドミウムの１種または２種以上からなる
原料ガスと酸素ガス、塩素ガスを導入し、更にレ
ーザ光或は放電加熱により原料ガスを活性化し、
前記生成物が堆積する基板上に原料ガスからなる
薄膜を形成するようにしたことを特徴とする薄膜
形成方法。 ２ 混合ガスのレーザ光照射による生成物を堆積
させた後、該堆積膜をパターニングする特許請求
の範囲第１項記載の薄膜形成方法。 ３ Si基板の表面にクロロエトキシトリエトキシ
シラン類乃至クロロメチルトリメチルシラン類を
塗布し、該Si基板を容器内に配置し、該容器内に
有機シラン、シラン、水素化ゲルマニウム、有機
ゲルマニウム類、ホスフイン、有機ホスフイン、
ボラン、有機ボラン類、アルキルアルミニウム、
アルカリカドミウムの１種または２種以上からな
る原料ガスと酸素ガス、塩素ガスを導入し、更に
レーザ光或は放電加熱により原料ガスを活性化
し、基板上に原料ガスからなる薄膜を形成するよ
うにしたことを特徴とする薄膜形成方法。 ４ Si基板の表面にクロロエトキシトリエトキシ
シラン類乃至クロロメチルトリメチルシラン類を
塗布した後、該塗布膜をパターニングする特許請
求の範囲第３項記載の薄膜形成方法。[Claims] 1. A mixed gas consisting of organic silane and chlorine gas is introduced into a container in which a Si substrate is placed, and a laser beam is further irradiated to form a product of the laser beam irradiation of the mixed gas on the Si substrate. is deposited, and then a raw material gas consisting of one or more of organosilane, silane, germanium hydride, organogermaniums, phosphine, organic phosphine, borane, organoborane, alkyl aluminum, and alkali cadmium and oxygen are deposited in the container. Gas, chlorine gas is introduced, and the raw material gas is activated by laser light or discharge heating.
A method for forming a thin film, characterized in that a thin film made of a source gas is formed on a substrate on which the product is deposited. 2. The thin film forming method according to claim 1, wherein the deposited film is patterned after depositing a product by irradiating a mixed gas with laser light. 3 Apply chloroethoxytriethoxysilanes or chloromethyltrimethylsilanes to the surface of the Si substrate, place the Si substrate in a container, and place organic silane, silane, germanium hydride, organic germaniums, and phosphine in the container. , organic phosphine,
Borane, organic borane, alkyl aluminum,
A raw material gas consisting of one or more types of alkali cadmium, oxygen gas, and chlorine gas are introduced, and the raw material gas is further activated by laser light or discharge heating to form a thin film made of the raw material gas on the substrate. A thin film forming method characterized by: 4. The method of forming a thin film according to claim 3, which comprises coating the surface of the Si substrate with chloroethoxytriethoxysilanes or chloromethyltrimethylsilanes and then patterning the coated film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59183728A JPS6163020A (en) | 1984-09-04 | 1984-09-04 | Formation of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59183728A JPS6163020A (en) | 1984-09-04 | 1984-09-04 | Formation of thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6163020A JPS6163020A (en) | 1986-04-01 |
| JPH036653B2 true JPH036653B2 (en) | 1991-01-30 |
Family
ID=16140923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59183728A Granted JPS6163020A (en) | 1984-09-04 | 1984-09-04 | Formation of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6163020A (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910003742B1 (en) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd apparatus |
| US5427824A (en) * | 1986-09-09 | 1995-06-27 | Semiconductor Energy Laboratory Co., Ltd. | CVD apparatus |
| US4906585A (en) * | 1987-08-04 | 1990-03-06 | Siemens Aktiengesellschaft | Method for manufacturing wells for CMOS transistor circuits separated by insulating trenches |
| JP2883333B2 (en) * | 1988-01-12 | 1999-04-19 | 株式会社東芝 | Method for manufacturing semiconductor device |
| US5013691A (en) * | 1989-07-31 | 1991-05-07 | At&T Bell Laboratories | Anisotropic deposition of silicon dioxide |
| EP0445535B1 (en) | 1990-02-06 | 1995-02-01 | Sel Semiconductor Energy Laboratory Co., Ltd. | Method of forming an oxide film |
| JPH0697158A (en) * | 1991-09-12 | 1994-04-08 | Semiconductor Energy Lab Co Ltd | Optical vapor-phase reaction method |
| CN1244891C (en) | 1992-08-27 | 2006-03-08 | 株式会社半导体能源研究所 | Active matrix display |
| KR0143873B1 (en) * | 1993-02-19 | 1998-08-17 | 순페이 야마자끼 | Insulating film and semiconductor device and method of manufacturing semiconductor device |
| US7465679B1 (en) | 1993-02-19 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film and method of producing semiconductor device |
| JP3637069B2 (en) | 1993-03-12 | 2005-04-06 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
-
1984
- 1984-09-04 JP JP59183728A patent/JPS6163020A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6163020A (en) | 1986-04-01 |
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| EXPY | Cancellation because of completion of term |