JPH0367455U - - Google Patents
Info
- Publication number
- JPH0367455U JPH0367455U JP12963789U JP12963789U JPH0367455U JP H0367455 U JPH0367455 U JP H0367455U JP 12963789 U JP12963789 U JP 12963789U JP 12963789 U JP12963789 U JP 12963789U JP H0367455 U JPH0367455 U JP H0367455U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film resistor
- integrated circuit
- thickness
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Description
第１図は本考案の一実施例としての処理工程の
説明図、第２図は第１図に対応する従来の説明図
である。
１……バイポーラ集積回路、２……シリコン酸
化膜、３……高抵抗薄膜、４……誘電体膜、５…
…アルミ配線膜。
FIG. 1 is an explanatory diagram of the processing steps as an embodiment of the present invention, and FIG. 2 is a conventional explanatory diagram corresponding to FIG. 1. 1...Bipolar integrated circuit, 2...Silicon oxide film, 3...High resistance thin film, 4...Dielectric film, 5...
...Aluminum wiring film.
Claims (1)
抗を備え、この薄膜抵抗の表面がこの薄膜抵抗の
厚さの５倍以下の誘電体の薄膜により保護され、
この保護の次の工程でアルミ配線薄膜が付加され
ることを特徴とする半導体集積回路装置。 A high-resistance thin film resistor is provided on a silicon semiconductor integrated circuit, and the surface of the thin film resistor is protected by a dielectric thin film having a thickness of five times or less than the thickness of the thin film resistor,
A semiconductor integrated circuit device characterized in that an aluminum wiring thin film is added in the next step of this protection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12963789U JPH0367455U (en) | 1989-11-06 | 1989-11-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12963789U JPH0367455U (en) | 1989-11-06 | 1989-11-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0367455U true JPH0367455U (en) | 1991-07-01 |
Family
ID=31677253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12963789U Pending JPH0367455U (en) | 1989-11-06 | 1989-11-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0367455U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011119780A (en) * | 2011-03-25 | 2011-06-16 | Mitsumi Electric Co Ltd | Semiconductor device |
-
1989
- 1989-11-06 JP JP12963789U patent/JPH0367455U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011119780A (en) * | 2011-03-25 | 2011-06-16 | Mitsumi Electric Co Ltd | Semiconductor device |
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