JPH0368545B2 - - Google Patents
Info
- Publication number
- JPH0368545B2 JPH0368545B2 JP58084171A JP8417183A JPH0368545B2 JP H0368545 B2 JPH0368545 B2 JP H0368545B2 JP 58084171 A JP58084171 A JP 58084171A JP 8417183 A JP8417183 A JP 8417183A JP H0368545 B2 JPH0368545 B2 JP H0368545B2
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- thickness
- center
- single crystal
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、圧力検出特性を向上させることので
きる半導体圧力変換素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor pressure transducer element that can improve pressure detection characteristics.
〔発明の技術的背景とその問題点〕
近時、シリコン（Si）などの半導体結晶板に薄
肉のダイヤフラムを形成し、このダイヤフラム上
に逆導電性の不純物を短冊状に拡散してピエゾ抵
抗ゲージを形成した圧力検出装置（圧力センサ）
が普及している。この種の圧力センサは、小型、
軽便である反面、ピエゾ抵抗ゲージの圧力歪に対
する抵抗値変化が非直線性を示し、そのため高精
度な圧力測定を行う場合には、上記非直線性の補
償を必要とした。しかし、非直線性の補償のため
には、補償回路を特設せねばならいこと、補償の
ための調整が必要なこと、感度を犠牲にして非直
線性を改良した場合には増幅回路系のゲインを上
げねばらないため回路系の安定性の面から考えて
好ましくない等の種々の欠点があつた。そこで、
従来、半導体圧力センサのダイヤフラムを、中心
部に向つて同心的に厚くし、その中心部の板厚を
周辺部の板厚の105〜115％程度とすることにより
非直線性を改良する試みがなされている。この方
法は、まず第１図に示すように、Si単結晶ペレツ
ト１をワツクス２により例えば石英板などの基台
３上に固定する。このペレツト１のダイヤフラム
形成領域を除く部分には例えばSi3N4などの耐エ
ツチング膜１ａが蒸着により被膜形成されてい
る。しかして、ペレツト１を固定した基台３を第
２図に示すエツチング槽４に入れ、エツチング液
５に浸漬する。このエツチング槽４は水平方向に
対して所定角度傾斜した受台６に嵌合・保持され
ていて、軸７を介して本体８に内蔵されているモ
ータに連設されている。しかして、エツチング槽
４を特定のエツチング速度で回転させると、周辺
部に比べて中央部のエツチングが早く進行して、
中心部に対して同心的に厚くなつた所要形状のダ
イヤフラムを得ることができる。しかるに、この
ようにして出来た半導体圧力検出装置はつぎのよ
うな欠点をもつている。すなわち、加工能率がす
こぶる小さいエツチング加工法を利用してダイヤ
フラムを形成するので、深い凹部つまりダイヤフ
ラムの側壁の高さを高くすることが困難であり、
ダイヤフラムの中央部の厚肉部分の厚さｔと側壁
の高さＴとの比は、高々２〜４倍であつた（第３
図参照）。したがつて、ダイヤフラムが形成され
たペレツトを台座にガラス接着することにより発
生する熱歪の影響を拡散抵抗層が受けて、感度特
性を低下させていた。また、エツチング加工によ
り形成されたダイヤフラムは、ダイヤフラム周辺
部つまりダイヤフラムと側壁との交差部分が丸み
を帯びていることも、感度特性を悪くしていた。
そこで、台座へのガラス接着の際の熱歪の影響を
ほとんど受けず、しかも高感度の半導体圧力変換
素子が要望されていた。[Technical background of the invention and its problems] Recently, piezoresistance gauges have been developed by forming a thin diaphragm on a semiconductor crystal plate such as silicon (Si), and diffusing impurities of opposite conductivity into strips on this diaphragm. Pressure detection device (pressure sensor)
is widespread. This kind of pressure sensor is small,
Although it is convenient, the change in resistance value of the piezoresistance gauge with respect to pressure strain exhibits nonlinearity, and therefore, in order to perform highly accurate pressure measurement, it is necessary to compensate for the nonlinearity. However, in order to compensate for nonlinearity, it is necessary to install a special compensation circuit, adjustment for compensation is required, and when improving nonlinearity at the expense of sensitivity, the gain of the amplifier circuit system is required. This has had various drawbacks, such as being undesirable from the standpoint of stability of the circuit system, since it requires an increase in temperature. Therefore,
Conventionally, attempts have been made to improve nonlinearity by making the diaphragm of a semiconductor pressure sensor concentrically thicker toward the center, and making the thickness at the center approximately 105 to 115% of the thickness at the periphery. being done. In this method, first, as shown in FIG. 1, a Si single crystal pellet 1 is fixed with wax 2 onto a base 3 such as a quartz plate. A portion of the pellet 1 other than the diaphragm formation region is coated with an etching-resistant film 1a made of, for example, Si 3 N 4 by vapor deposition. Then, the base 3 on which the pellets 1 are fixed is placed in an etching tank 4 shown in FIG. 2, and immersed in an etching solution 5. This etching bath 4 is fitted and held by a pedestal 6 inclined at a predetermined angle with respect to the horizontal direction, and is connected via a shaft 7 to a motor built in a main body 8. Therefore, when the etching tank 4 is rotated at a specific etching speed, the etching progresses faster in the center than in the periphery.
It is possible to obtain a diaphragm of the desired shape, which is thickened concentrically with respect to the center. However, the semiconductor pressure detection device made in this manner has the following drawbacks. In other words, since the diaphragm is formed using an etching process with very low processing efficiency, it is difficult to increase the height of the deep recess, that is, the side wall of the diaphragm.
The ratio of the thickness t of the thick central part of the diaphragm to the height T of the side wall was at most 2 to 4 times (Third
(see figure). Therefore, the diffusion resistance layer is affected by thermal distortion caused by glass bonding the pellet on which the diaphragm is formed to the pedestal, resulting in a decrease in sensitivity characteristics. Furthermore, the diaphragm formed by etching has a rounded periphery, that is, the intersection of the diaphragm and the side wall, which also deteriorates the sensitivity characteristics.
Therefore, there has been a need for a highly sensitive semiconductor pressure transducer element that is almost unaffected by thermal distortion when glass is bonded to a pedestal.
本発明は、上記事情を勘案してなされたもの
で、台座への接着の際に発生する熱歪の影響を回
避することができ、しかも高精度圧力測定に適し
た半導体圧力変換素子を提供することを目的とす
る。
The present invention has been made in consideration of the above circumstances, and provides a semiconductor pressure transducer element that can avoid the effects of thermal distortion that occurs when bonding to a pedestal and is suitable for high-precision pressure measurement. The purpose is to
シリコン単結晶基板の一方の主面に形成された
拡散抵抗層と、上記シリコン単結晶基板の他方の
主面に凹部を加工することによつて形成された薄
肉のダイヤフラム部とを備え、上記ダイヤフラム
部に隣接した上記シリコン単結晶基板の厚さを上
記ダイヤフラム部中心の厚さの５倍以上に形成
し、中央部に受圧孔を有する台座に上記凹部が形
成された上記主面が接着される半導体圧力変換素
子において、上記凹部は回転砥石による研削加工
を施すことによつて上記ダイヤフラム部の中心部
の厚みが上記ダイヤフラム部の周縁吹から同心円
状に直線的に増大変化するように形成されるよう
にしたものである。
The diaphragm comprises a diffused resistance layer formed on one main surface of a silicon single crystal substrate, and a thin diaphragm portion formed by processing a recess on the other main surface of the silicon single crystal substrate. The thickness of the silicon single crystal substrate adjacent to the diaphragm part is formed to be five times or more the thickness of the center of the diaphragm part, and the main surface in which the recessed part is formed is bonded to a pedestal having a pressure receiving hole in the center part. In the semiconductor pressure transducer element, the recessed portion is formed by grinding with a rotating grindstone so that the thickness of the center portion of the diaphragm portion increases linearly in concentric circles from the peripheral edge of the diaphragm portion. This is how it was done.
以下、本発明の一実施例を図面を参照して詳述
する。
Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第４図は、本実施例の半導体圧力変換素子の製
造に用いられる研削装置を示すもので、第５図に
示すカツプ形砥石９は、自転用スピンドル１０に
同軸に固定されている。上記自転用スピンドル１
０は、偏心軸受１１により軸支されている。この
偏心軸受１１は、介挿体１２を介して円柱状の支
持体１３に取付けられている。この支持体１３の
外周面には、図示せぬ環装体が装着され、高圧空
気源から供給された高圧空気を偏心軸受１１内に
設けられているエア・タービン機構に導入して、
自転用スピンドル１０を高速回転させるようにな
つている。さらに、支持体１３は図示せぬ軸受に
軸支された公転用スピンドル１４に同軸に固定さ
れている。この公転用スピンドル１４は、図示せ
ぬ電動機により回転駆動されるようなつている。
上記自転用スピンドル１０の軸線１５は、公転用
スピンドル１４の軸線１６に対して角度θ（好ま
しくは、0.05〜0.3度）傾斜するようになつてい
る。すなわち、軸線１５の一端は軸線１５のカツ
プ形砥石９側の交点１７において交差し、他端は
支持体１３の下端面上において、軸線１６からe0
だけ偏心した位置と交差するようになつている。
したがつて、軸線１５は公転用スピンドル１４の
回転にともない交点１７を頂点とする円錐を形成
するようになつている。なお、図示せぬが、本実
施例の研削装置には、円板状のシリコン単結晶基
板である被加工物１８を、この被加工物１８の
（100）面となつている主面が公転用スピンドル１
４の軸線１６と直交するように、保持固定する保
持装置が設けられている。また、カツプ形砥石９
は、図示せぬ送りテーブルにより公転用スピンド
ル１４の軸線１６に沿つて昇降されるようになつ
ている。このカツプ形砥石９は、第５図に示すよ
うに、先端部中央には凹部１９が設けられてい
て、先端周縁部は、円環状の研削作用面２０とな
つている。そして、この研削作用面２０の外径r1
は、研削加工面上における自転用スピンドル１０
の軸線１５の公転用スピンドル１４の軸線１６に
対する偏心量ｅよりも大きく、研削作用面２０の
内径r2は、偏心量ｅよりも小さく設定され、研削
中に研削作用面２０を軸心１６が通るように設定
されている（第４図参照）。 FIG. 4 shows a grinding device used for manufacturing the semiconductor pressure transducer element of this embodiment. A cup-shaped grindstone 9 shown in FIG. 5 is coaxially fixed to a rotating spindle 10. Above rotation spindle 1
0 is pivotally supported by an eccentric bearing 11. This eccentric bearing 11 is attached to a cylindrical support 13 via an insert 12. An annular body (not shown) is attached to the outer peripheral surface of the support body 13, and high pressure air supplied from a high pressure air source is introduced into the air turbine mechanism provided in the eccentric bearing 11.
The rotation spindle 10 is designed to rotate at high speed. Further, the support body 13 is coaxially fixed to a revolution spindle 14 which is supported by a bearing (not shown). The revolution spindle 14 is rotatably driven by an electric motor (not shown).
The axis 15 of the rotation spindle 10 is inclined at an angle θ (preferably 0.05 to 0.3 degrees) with respect to the axis 16 of the revolution spindle 14. That is, one end of the axis 15 intersects at the intersection 17 of the axis 15 on the cup-shaped grindstone 9 side, and the other end is e 0 from the axis 16 on the lower end surface of the support 13.
It intersects with an eccentric position.
Therefore, as the revolution spindle 14 rotates, the axis 15 forms a cone having the intersection 17 as its apex. Although not shown in the drawings, the grinding apparatus of this embodiment has a workpiece 18 which is a disk-shaped silicon single crystal substrate, and the main surface of the workpiece 18, which is a (100) plane, is exposed to the surface. Diversion spindle 1
A holding device for holding and fixing is provided so as to be orthogonal to the axis 16 of 4. In addition, the cup-shaped whetstone 9
is moved up and down along the axis 16 of the revolution spindle 14 by a feed table (not shown). As shown in FIG. 5, this cup-shaped grindstone 9 is provided with a recess 19 at the center of its tip, and has an annular grinding surface 20 at its periphery. Then, the outer diameter r 1 of this grinding surface 20
is a spindle 10 for rotation on a grinding surface
The inner diameter r2 of the grinding surface 20 is set smaller than the eccentricity e of the axis 15 of the revolution spindle 14 with respect to the axis 16, and the inner diameter r2 of the grinding surface 20 is set smaller than the eccentricity e. (See Figure 4).
つぎに、上記構成の研削装置を用いた本実施例
の半導体圧力変換素子の製造方法について述べる
と、まず、第６図に示すように、例えば厚み２
mm、一辺の長さが22mmの正方形板状のシリコン単
結晶基板である被加工物１８の一方の主面に拡散
抵抗層２１ａ，２１ａ，２１ｂ，２１ｂを長手方
向が＜110＞又は＜１１０＞となるようにたとえ
ばボロンＢにより拡散形成する。これら拡散抵抗
層２１ａ，２１ａ，２１ｂ，２１ｂは、90度間隔
で等配して設けられている。そして、拡散抵抗層
２１ａ，２１ａは、それらの長手方向が後述する
ダイヤフラムの半径方向と直交するように設けら
れて、圧力Ｐによりプラスに変化する抵抗Ppを
有し、かつ、拡散抵抗層２１ｂ，２１ｂは、それ
らの長手方向が後述するダイヤフラムの半径方向
に設けられて、圧力Ｐによりマイナスに変化する
抵抗RNを有している。ついで、第７図に示すよ
うに、被加工物１８の他方の主面に、耐エツチン
グ層であるSi3N4層２１を形成する。しかして、
上記構成の研削装置を用いて、まず、被加工物１
８をSi3N4層２１が上面となるように保持装置に
固定し、公転用スピンドル１４を電動機により１
〜50r・ｐ・ｍで回転駆動させるとともに、自転
用スピンドル１０をエア・タービン機構により
20000〜100000r・ｐ・ｍで高速回転させ、送りテ
ーブルを矢印２３方向に下降させて、カツプ形砥
石９を被加工物１８に向つて切込ませる。する
と、カツプ形砥石９は、第８図のように、矢印２
４方向に自転運動しながら、矢印２５方向に公転
運動する。その結果、例えば深さ1875μｍ、直径
17mmの丸穴（凹部）２６が形成される。また、カ
ツプ形砥石９の研削作用面２０は、つねに丸穴２
６の中心２７を通過するので、第９図に示すよう
な中央部分の△Ｈ（５〜30μｍ）及び底部周縁か
ら中央部にかけての傾斜角θ′が0.05〜0.3度の円錐
状のふくらみを有し厚みが中心部で例えば125μ
ｍのダイヤフラム部２８が形成される。しかし
て、上記カツプ形砥石９による研削加工で生じた
微細な破砕層等を除去し、さに精度よく所定形状
に丸穴２６を形成するために、第１０図に示すよ
うに、被加工物１８の下底面、外周面、上端面に
ホトレジスト、ワツクス等をマスク２０として被
着させ、例えばフツ硝酸からなるエツチング液に
より丸穴２６の内面をエツチング加工する。そし
て、２〜5μｍ／分の加工速度で徐々に50μｍ程度
加工しダイヤフラム部２８を例えば中心の厚さ
hcが75μｍ、周縁部の厚さheが63μｍとなるよう
に、しかも±1μｍの公差範囲内で仕上げる。こ
の場合、ダイヤフラム部２８に隣接した被加工物
１８の厚さは、ダイヤフラム部２８中心の厚さの
約30倍となつている。しかして、第１１図に示す
ように、被加工物１８の丸穴２６側の上端面に、
ガラス接着により、中央部に貫通孔である受圧孔
３０が形成された円柱状の台座３１をガラス接着
する。このときの接着条件は、加熱温度が約550
℃、加熱時間は約30分であつて、全体加熱後ガラ
ス接着を完了して冷却する際に、接着剤としての
ガラスと、シリコン単結晶基板との熱膨脹率の差
異に基因して、熱歪が接着部近傍に発生してい
る。 Next, we will describe the method for manufacturing the semiconductor pressure transducer element of this example using the grinding apparatus with the above configuration. First, as shown in FIG.
Diffused resistance layers 21a, 21a, 21b, 21b are formed on one main surface of the workpiece 18, which is a square plate-shaped silicon single crystal substrate with a side length of 22 mm and a longitudinal direction of <110> or <110>. For example, boron B is diffused and formed so that it becomes . These diffused resistance layers 21a, 21a, 21b, and 21b are equally spaced at 90 degree intervals. The diffused resistance layers 21a, 21a are provided so that their longitudinal directions are orthogonal to the radial direction of the diaphragm, which will be described later, and have a resistance Pp that changes positively with pressure P. 21b has a resistance R N whose longitudinal direction is provided in the radial direction of the diaphragm, which will be described later, and which changes negatively depending on the pressure P. Next, as shown in FIG. 7, a Si 3 N 4 layer 21, which is an etching-resistant layer, is formed on the other main surface of the workpiece 18. However,
Using the grinding device having the above configuration, first, the workpiece 1
8 is fixed to a holding device so that the Si 3 N 4 layer 21 faces upward, and the revolution spindle 14 is set to 1 by an electric motor.
The cup-shaped grindstone 9 is driven to rotate at ~50 r.p.m., and the rotating spindle 10 is also rotated at a high speed of 20,000 to 100,000 r.p.m by an air turbine mechanism, and the feeding table is lowered in the direction of the arrow 23. A cut is made toward the workpiece 18. Then, the cup-shaped grindstone 9 moves in the direction of the arrow 2 as shown in FIG.
It rotates in four directions and revolves in the direction of arrow 25. As a result, for example, the depth is 1875μm, the diameter
A 17 mm round hole (recess) 26 is formed. Further, the grinding surface 20 of the cup-shaped grindstone 9 always has a round hole 2.
6, it has a conical bulge with ΔH (5 to 30 μm) at the center and an inclination angle θ' from the bottom periphery to the center of 0.05 to 0.3 degrees as shown in FIG. For example, the thickness at the center is 125μ
m diaphragm portions 28 are formed. As shown in FIG. 10, in order to remove the fine crushed layer etc. generated by the grinding process using the cup-shaped grindstone 9 and form the round hole 26 in a predetermined shape with high precision, the workpiece is A photoresist, wax, or the like is applied as a mask 20 to the lower bottom surface, outer peripheral surface, and upper end surface of the hole 18, and the inner surface of the round hole 26 is etched using an etching solution made of, for example, difluoric nitric acid. Then, the diaphragm portion 28 is gradually processed to a thickness of about 50 μm at a processing speed of 2 to 5 μm/min, for example, to the thickness of the center.
It is finished so that hc is 75 μm and the thickness he of the peripheral edge is 63 μm, and within the tolerance range of ±1 μm. In this case, the thickness of the workpiece 18 adjacent to the diaphragm portion 28 is approximately 30 times the thickness at the center of the diaphragm portion 28. Therefore, as shown in FIG. 11, on the upper end surface of the workpiece 18 on the round hole 26 side,
A cylindrical pedestal 31 having a pressure receiving hole 30, which is a through hole, formed in the center is bonded to glass. The bonding conditions at this time are a heating temperature of approximately 550℃.
℃, the heating time is about 30 minutes, and when the glass bonding is completed and cooled after the entire heating, thermal distortion occurs due to the difference in thermal expansion coefficient between the glass as an adhesive and the silicon single crystal substrate. occurs near the adhesive part.
かくて、本実施例の半導体圧力変換素子は、丸
穴２６側のダイヤフラム部２８の周縁から中心に
向つて同心的かつ連続的に厚くなるふくらみが形
成されているので、圧力〜歪特性の非直線性の補
償を補償回路を特設することなく行うことができ
る。とりわけ、ダイヤフラム部２８の中心の厚さ
hcと周縁部の厚さheとの比を適宜選択すること
により、非直線性を零にすることができる。たと
えば、本実施例の場合、hc／heの値は、ほぼ1.20
であるが、この値を選ぶことにより、第１２図に
示すように、非直線性は零となる。さらに、本実
施例においては、ダイヤフラム部２８の側壁の厚
さは、ダイヤフラム部２８の厚さの約30倍である
ので、台座３１をガラス接着しさ際の熱歪の影響
をダイヤフラム部２８が受けず、高感度の受圧特
性を維持することができる。したがつて、本実施
例の半導体圧力変換素子は、従来のエツチング加
工によるものに比べて歩留が大幅に向上する。た
とえば、本実施例の場合においては歩留が約92％
であるのに対して、エツチング加工により、厚さ
が300μｍのシリコン単結晶基板により同一径か
つ厚さ80μｍのダイヤフラム部が形成された半導
体圧力変換素子の歩留は約60％であつた。 Thus, in the semiconductor pressure transducer element of this embodiment, a bulge is formed that concentrically and continuously thickens from the periphery of the diaphragm portion 28 on the round hole 26 side toward the center, so that the pressure-strain characteristics are non-uniform. Linearity compensation can be performed without the need for a special compensation circuit. In particular, the thickness of the center of the diaphragm portion 28
Nonlinearity can be made zero by appropriately selecting the ratio between hc and the thickness he of the peripheral edge. For example, in this example, the value of hc/he is approximately 1.20.
However, by selecting this value, the nonlinearity becomes zero, as shown in FIG. Furthermore, in this embodiment, since the thickness of the side wall of the diaphragm part 28 is about 30 times the thickness of the diaphragm part 28, the diaphragm part 28 is susceptible to thermal distortion when the pedestal 31 is bonded to the glass. First, highly sensitive pressure receiving characteristics can be maintained. Therefore, the yield of the semiconductor pressure transducer of this embodiment is significantly improved compared to that produced by conventional etching processing. For example, in the case of this example, the yield is about 92%.
On the other hand, the yield of a semiconductor pressure transducer element in which a diaphragm portion of the same diameter and 80 μm in thickness was formed from a silicon single crystal substrate with a thickness of 300 μm by etching was about 60%.
なお、上記実施例においては、半導体圧力変換
素子のダイヤフラム部に隣接したシリコン単結晶
基板の厚さは、ダイヤフラム部中心の厚さの約30
倍であるが、５倍以上である限り任意に選択して
よい。しかし、熱歪の影響を有効に回避するため
には10倍以上が好ましい。さらに、ダイヤフラム
のふくらみについても、中心の厚さが周縁の厚さ
の105〜125％の範囲で仕様に応じて適宜選択して
よい。さらにまた、ダイヤフラム部の形成手段
も、砥石による研削加工に限定されるものでな
く、たとえば、超音波研削加工によつてもよい。
また、研削加工後の仕上げのためのエツチング
は、省略してもよい。 In the above embodiment, the thickness of the silicon single crystal substrate adjacent to the diaphragm portion of the semiconductor pressure transducer element is approximately 30 mm thick than the thickness at the center of the diaphragm portion.
However, it may be arbitrarily selected as long as it is 5 times or more. However, in order to effectively avoid the influence of thermal distortion, it is preferable that the ratio be 10 times or more. Furthermore, the bulge of the diaphragm may be appropriately selected depending on the specifications, with the thickness at the center ranging from 105 to 125% of the thickness at the periphery. Furthermore, the means for forming the diaphragm portion is not limited to grinding using a grindstone, and may also be, for example, ultrasonic grinding.
Furthermore, etching for finishing after grinding may be omitted.
本発明の半導体圧力変換素子によれば、上記ダ
イヤフラム部の中心部の厚みが上記ダイヤフラム
部の周縁吹から同心円状に直線的に増大変化する
ように形成された凹部が形成されているので、圧
力に対する感度が向上し、高精度圧力測定に適す
る半導体圧力変換素子を得ることができる。ま
た、ダイヤフラム部がシリコン単結晶基板の台座
へのガラス接着の際に生じる熱による影響を受け
ることもなくなる。
According to the semiconductor pressure transducer element of the present invention, since the recess is formed such that the thickness of the center of the diaphragm part increases linearly in a concentric circle from the peripheral edge of the diaphragm part, the pressure can be reduced. It is possible to obtain a semiconductor pressure transducer element that has improved sensitivity to pressure and is suitable for high-precision pressure measurement. Furthermore, the diaphragm part is no longer affected by the heat generated when glass is bonded to the base of the silicon single crystal substrate.
第１図は従来技術においてエツチング加工され
るシリコン単結晶基板を示す図、第２図は従来技
術において用いられるエツチング装置を示す図、
第３図は従来技術により製作されたダイヤフラム
を示す断面図、第４図は本発明の一実施例の半導
体圧力変換素子の製造に用いられる研削装置の要
部を示す図、第５図は第４図の研削装置に取付け
られているカツプ形砥石の断面図、第６図は拡散
抵抗層が形成されたシリコン単結晶基板の下面
図、第７図は第６図のＸ−Ｘ線断面図、第８図は
第５図のカツプ形砥石の遊星運動を示す図、第９
図乃至第１１図は本発明の一実施例の半導体圧力
変換素子の製造工程を示す図、第１２図は本発明
の一実施例の半導体圧力変換素子のダイヤフラム
部の中心の厚さhcと周縁の厚さheとの比（hc／
he）と圧力〜歪特性の非直線性との関係を示す
グラフである。
１８：被加工物（シリコン単結晶基板）、２１
ａ，２１ｂ：拡散抵抗層、２６：丸穴（凹部）、
２８：ダイヤフラム部。
FIG. 1 is a diagram showing a silicon single crystal substrate to be etched in the conventional technique, FIG. 2 is a diagram illustrating an etching apparatus used in the conventional technique,
FIG. 3 is a cross-sectional view showing a diaphragm manufactured using the conventional technique, FIG. Figure 4 is a cross-sectional view of the cup-shaped grindstone attached to the grinding device, Figure 6 is a bottom view of the silicon single crystal substrate on which a diffused resistance layer is formed, and Figure 7 is a cross-sectional view taken along the line X-X in Figure 6. , FIG. 8 is a diagram showing the planetary motion of the cup-shaped grindstone in FIG. 5, and FIG.
11 are diagrams showing the manufacturing process of a semiconductor pressure transducer according to an embodiment of the present invention, and FIG. 12 is a diagram showing the thickness hc at the center of the diaphragm portion and the peripheral edge of the semiconductor pressure transducer according to an embodiment of the present invention. The ratio to the thickness he (hc/
2 is a graph showing the relationship between nonlinearity of pressure-strain characteristics and pressure-strain characteristics. 18: Workpiece (silicon single crystal substrate), 21
a, 21b: Diffused resistance layer, 26: Round hole (concave part),
28: Diaphragm part.
Claims (1)
た拡散抵抗層と、上記シリコン単結晶基板の他方
の主面に凹部を加工することによつて形成された
簿肉のダイヤフラム部とを備え、上記ダイヤフラ
ム部に隣接した上記シリコン単結晶基板の厚さを
上記ダイヤフラム部中心の厚さの５倍以上に形成
し、中央部に受圧孔を有する台座に上記凹部が形
成された上記主面が接着される半導体圧力変換素
子において、上記凹部は回転砥石による研削加工
を施すことによつて上記ダイヤフラム部の中心部
の厚みが上記ダイヤフラム部の周縁部から同心円
状に直線的に増大変化するように形成されたこと
を特徴とする半導体圧力変換素子。 ２ 上記ダイヤフラム部の中心の厚さは上記ダイ
ヤフラム部の周縁の厚さ105〜125％であることを
特徴とする特許請求の範囲第１項記載の半導体圧
力変換素子。[Claims] 1. A diffusion resistance layer formed on one main surface of a silicon single crystal substrate, and a thin film formed by processing a recess on the other main surface of the silicon single crystal substrate. a diaphragm part, the silicon single crystal substrate adjacent to the diaphragm part is formed to have a thickness of five times or more than the thickness at the center of the diaphragm part, and the recess is formed in the pedestal having a pressure receiving hole in the center part. In the semiconductor pressure transducer element to which the main surface is bonded, the concave portion is ground by a rotating grindstone so that the thickness of the center of the diaphragm portion is concentrically linear from the periphery of the diaphragm portion. A semiconductor pressure transducing element characterized in that it is formed to increase and change. 2. The semiconductor pressure transducer element according to claim 1, wherein the thickness of the center of the diaphragm portion is 105 to 125% of the thickness of the peripheral edge of the diaphragm portion.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58084171A JPS59210676A (en) | 1983-05-16 | 1983-05-16 | Semiconductor pressure conversion element |
| GB08327236A GB2130435B (en) | 1982-10-27 | 1983-10-12 | Semiconductor strain sensor and method for manufacturing the same |
| DE19833338384 DE3338384A1 (en) | 1982-10-27 | 1983-10-21 | SEMICONDUCTOR STRETCH SENSOR AND METHOD FOR THE PRODUCTION THEREOF |
| US06/820,598 US4622098A (en) | 1982-10-27 | 1986-01-21 | Method for manufacturing semiconductor strain sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58084171A JPS59210676A (en) | 1983-05-16 | 1983-05-16 | Semiconductor pressure conversion element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59210676A JPS59210676A (en) | 1984-11-29 |
| JPH0368545B2 true JPH0368545B2 (en) | 1991-10-28 |
Family
ID=13823044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58084171A Granted JPS59210676A (en) | 1982-10-27 | 1983-05-16 | Semiconductor pressure conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59210676A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4771667B2 (en) * | 2004-03-24 | 2011-09-14 | 京セラ株式会社 | Pressure detection device package and pressure detection device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5664471A (en) * | 1979-10-30 | 1981-06-01 | Toshiba Corp | Detector for pressure of semiconductor |
| JPS5817076A (en) * | 1981-07-17 | 1983-02-01 | 株式会社東芝 | Controller for group of elevator |
-
1983
- 1983-05-16 JP JP58084171A patent/JPS59210676A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59210676A (en) | 1984-11-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5191738A (en) | Method of polishing semiconductor wafer | |
| JP3166146B2 (en) | Surface grinding method and apparatus | |
| US6004860A (en) | SOI substrate and a method for fabricating the same | |
| US4622098A (en) | Method for manufacturing semiconductor strain sensor | |
| CN117300886B (en) | Double-sided grinding device | |
| US4579760A (en) | Wafer shape and method of making same | |
| JPH02109332A (en) | Manufacturing method of semiconductor substrate | |
| JPH02139163A (en) | Working method for wafer | |
| JPS59210676A (en) | Semiconductor pressure conversion element | |
| JPS6410111B2 (en) | ||
| JP3821947B2 (en) | Wafer polishing apparatus and wafer polishing method | |
| JP3821944B2 (en) | Wafer single wafer polishing method and apparatus | |
| JPH0738381B2 (en) | Wafer polishing machine | |
| JPH0335062B2 (en) | ||
| KR20220032479A (en) | Grinding method | |
| JPH03184756A (en) | Grinding method for wafer | |
| JPS58223726A (en) | Production of diaphragm | |
| JPH0722892B2 (en) | Backside polishing device for stamper for optical disk molding | |
| JPS6037177A (en) | semiconductor pressure sensor | |
| CN115502048B (en) | Photoresist coating device, method and application for improving coating tendency and uniformity | |
| JP2787942B2 (en) | Polishing method of headpiece aggregate | |
| JPH09309049A (en) | High precision grinding method for semiconductor wafer | |
| JPS61142074A (en) | Grinding wheel device | |
| JP3664357B2 (en) | Wafer grinding equipment | |
| JPH04261768A (en) | Double-side lapping device |