JPH036989B2 - - Google Patents

Info

Publication number
JPH036989B2
JPH036989B2 JP19576386A JP19576386A JPH036989B2 JP H036989 B2 JPH036989 B2 JP H036989B2 JP 19576386 A JP19576386 A JP 19576386A JP 19576386 A JP19576386 A JP 19576386A JP H036989 B2 JPH036989 B2 JP H036989B2
Authority
JP
Japan
Prior art keywords
electron gun
electron
electrons
raw material
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19576386A
Other languages
Japanese (ja)
Other versions
JPS6350461A (en
Inventor
Hisashi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP19576386A priority Critical patent/JPS6350461A/en
Publication of JPS6350461A publication Critical patent/JPS6350461A/en
Publication of JPH036989B2 publication Critical patent/JPH036989B2/ja
Granted legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、真空中で原材料物質を蒸発させて半
導体基板等の上に薄膜を堆積させる電子銃蒸着装
置の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to an improvement in an electron gun evaporation apparatus for depositing a thin film on a semiconductor substrate or the like by evaporating a raw material in a vacuum.

(従来の技術とその問題点) 第2図、第3図に従来の電子銃蒸着装置の概略
の断面図を示す。各符号とその部材の説明は第1
図に準じ後述する。
(Prior art and its problems) FIGS. 2 and 3 are schematic sectional views of a conventional electron gun evaporation apparatus. Explanation of each symbol and its parts is in the first page.
It will be described later according to the figure.

従来この種の装置には、電子ビーム偏向用の電
磁石に断線を生じたり、永久磁石が劣化したりし
て、電子ビームが所定の原材料物質の表面位置を
照射しなくなつた場合には、これを検知する手段
がない。電子銃は非常に大出力のものを使用して
いるので、上記のような場合には、電子ビームが
直射した場所は僅かの時間内に溶けてしまつて、
ややもすると大事故になる恐れがある。電子銃の
状況を常時監視すれば、この事故はある程度まで
防止出来るであろうが、労力的に困難がある。
Conventionally, this type of device has a function that can be used when the electron beam no longer irradiates a predetermined surface position of the raw material due to a break in the electromagnet for deflecting the electron beam or due to deterioration of the permanent magnet. There is no way to detect it. Since the electron gun uses a very high output power, in the above case, the area directly hit by the electron beam will melt within a short period of time.
If you do too much, there is a risk of a serious accident. If the status of the electron gun was constantly monitored, this accident could be prevented to some extent, but it would be labor-intensive.

また、蒸発によつて原材料物質は次第に減少す
るが、どの程度の量の原材料物質がルツボ内に残
つているかは、目視以外では、蒸着速度、蒸着時
間などから推定するしかない。もし原材料物質が
突沸などを起こし、原材料物質が急に無くなつた
場合は、電子ビームがルツボの底を直射して矢張
り大事故となるおそれがある。
Furthermore, although the raw material is gradually reduced by evaporation, the amount of raw material remaining in the crucible can only be estimated from the evaporation rate, evaporation time, etc. other than by visual observation. If the raw materials suddenly run out due to bumping, there is a risk that the electron beam will directly hit the bottom of the crucible, causing a major accident.

(発明の目的) 本発明は、上述の如き電子ビームの異常照射を
検出して、事故を未然に防止できる電子銃蒸着装
置の提供を目的とする。
(Objective of the Invention) An object of the present invention is to provide an electron gun evaporation apparatus that can detect abnormal irradiation of an electron beam as described above and prevent accidents.

(発明の構成) 本発明は、真空中で高電圧を印加して電子を加
速し、この加速された電子を磁界によつて偏向さ
せて、ルツボ内に納められた原材料物質を照射
し、当該原材料物質を加熱、溶融して蒸発させ、
半導体基板等の上に薄膜を堆積させる電子銃蒸着
装置において、電子銃本体の後方に該照射された
原材料物質から反射した電子を検出するためのコ
レクターを取り付けるとともに、該コレクターに
入射する電子の量の急変を検知することで該電子
銃の異常を検出する手段を設けた電子銃蒸着装置
によつて、前記目的を達成したものである。
(Structure of the Invention) The present invention accelerates electrons by applying a high voltage in a vacuum, deflects the accelerated electrons by a magnetic field, and irradiates a raw material contained in a crucible. Heating, melting and vaporizing the raw material,
In an electron gun evaporation device that deposits a thin film on a semiconductor substrate, etc., a collector is attached to the rear of the electron gun body to detect electrons reflected from the irradiated raw material, and the amount of electrons incident on the collector is The above object has been achieved by an electron gun evaporation apparatus provided with means for detecting abnormality in the electron gun by detecting a sudden change in the electron gun.

(作用) 反射電子コレクターで捕捉された反射電子は、
コレクター電流となつて反射電子検出器に送られ
る。そしてここで電子銃電源回路の電流とコレク
ター電流の比較が行われ、その比が所定の正常状
態からずれたとき異常状態と判定される。
(Function) The backscattered electrons captured by the backscattered electron collector are
This becomes a collector current and is sent to the backscattered electron detector. Then, the current of the electron gun power supply circuit and the collector current are compared, and when the ratio deviates from a predetermined normal state, it is determined that the state is abnormal.

(実施例) 以下、本発明の実施例を図面を参照して説明す
る。
(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.

第1図は本発明の実施例の電子銃の概略の構成
を示す横断面図である。
FIG. 1 is a cross-sectional view showing a schematic configuration of an electron gun according to an embodiment of the present invention.

電子銃本体1のフイラメント4から出た電子
は、電子ビーム偏向用磁石7の作る磁界により偏
向されて電子ビーム軌道2を通りルツボ6内に納
められた原材料物質5のほぼ中央の表面を照射す
る。そして、その一部の電子は原材料物質5で反
射され、矢張り偏向用磁石7の磁界で偏向されて
反射電子軌道3を通り反射電子コレクター9に飛
び込む。8は水冷パイプであつて、電子銃本体を
冷却するためのものである。
The electrons emitted from the filament 4 of the electron gun body 1 are deflected by the magnetic field created by the electron beam deflection magnet 7, pass through the electron beam trajectory 2, and irradiate the surface of the raw material 5 housed in the crucible 6 at approximately the center. . Then, some of the electrons are reflected by the raw material 5, deflected by the magnetic field of the deflecting magnet 7, and fly into the reflected electron collector 9 through the reflected electron trajectory 3. 8 is a water cooling pipe for cooling the electron gun body.

従来の装置では、上記の反射電子は、磁界で偏
向させて第2図に示すように電子銃の後部を広く
して電子銃内13に取り込むか、第3図に示すよ
うに反射電子シールド14を設置してここに取り
込み、反射電子が真空チヤンバー内に散乱するの
を防止していたものであるが、本発明ではこの反
射電子を積極的に活用するため、反射電子コレク
ター9を絶縁石を介して取り付けている。
In conventional devices, the above-mentioned reflected electrons are either deflected by a magnetic field and taken into the electron gun by widening the rear part of the electron gun as shown in FIG. The backscattered electron collector 9 was installed with an insulating stone to prevent the backscattered electrons from being scattered inside the vacuum chamber. It is attached through.

さて、反射電子コレクター9で捕捉された反射
電子は、コレクター電流となつて反射電子検出機
11に送られる。そしてここで電子銃電源回路1
2の電流(エミツシヨン電流)とコレクター電流
の比較が行われ、この比が所定の正常状態の比率
から離れた値を持つた場合には異常状態と判定さ
れて電子銃電源回路12の出力が絶たれ、事故を
未然に防止する。
Now, the backscattered electrons captured by the backscattered electron collector 9 are sent to the backscattered electron detector 11 as a collector current. And here, electron gun power supply circuit 1
2 current (emission current) and collector current are compared, and if this ratio has a value far from a predetermined normal state ratio, it is determined that there is an abnormal state and the output of the electron gun power supply circuit 12 is cut off. to prevent accidents.

第4図には、ある電子銃における電源回路12
のエミツシヨン電流と反射電子コレクター電流の
関係を示した。
FIG. 4 shows a power supply circuit 12 in a certain electron gun.
The relationship between the emission current and the backscattered electron collector current is shown.

曲線15は、電子ビームがルツボの後方、コレ
クター寄りの位置を照射した場合、 曲線16は、電子ビームが正常な原材料物質表
面を照射した場合、 曲線17は、電子ビームがルツボの手前を照射
した場合、 曲線18は、ルツボ内の原材料物質表面が20mm
下降し、電子ビームがその表面を照射した場合、
である。
Curve 15 is when the electron beam irradiates the back of the crucible near the collector, Curve 16 is when the electron beam irradiates the surface of a normal raw material, and Curve 17 is when the electron beam irradiates the front of the crucible. In this case, curve 18 indicates that the surface of the raw material in the crucible is 20 mm.
When it descends and the electron beam illuminates its surface,
It is.

各曲線はほゞ直線ということが出来、電子ビー
ムが正常な場合16ではエミツシヨン電流の約9
%がコレクター電流となつて流れている。
Each curve can be said to be almost a straight line, and when the electron beam is normal, the emission current is about 9
% flows as collector current.

これに対し、電子ビームがルツボの後方及び手
前を照射する15及び17の場合には、それぞれ
エミツシヨン電流の10%及び8%のコレクター電
流が流れている。
On the other hand, in cases 15 and 17 where the electron beam irradiates the back and front of the crucible, collector currents of 10% and 8% of the emission current flow, respectively.

また、原材料物質の表面が20mm降下した場合1
8では、それが6%となつている。(それぞれの
%は、エミツシヨン電流がほぼ200mAの場合の
値でもある。) 即ち、この装置の場合は、エミツシヨン電流が
200mAのとき、コレクター電流がエミツシヨン
電流の9%であるのを基準として、これから±1
%以上の変動があつた場合には異常状態にあると
判定して電子銃電源回路を絶てばよいことにな
る。これによつて電子銃の事故を未然に防止する
ことが出来る。
In addition, if the surface of the raw material drops by 20 mm, 1
In 8, it is 6%. (Each percentage is also the value when the emission current is approximately 200mA.) In other words, in the case of this device, the emission current is approximately 200mA.
At 200mA, the collector current is 9% of the emission current, and from this ±1
% or more, it is determined that there is an abnormal state and the electron gun power supply circuit can be shut off. This makes it possible to prevent accidents with the electron gun.

(発明の効果) 本発明によれば、電子ビーム偏向用の電磁石に
断線を生じたり、永久磁石が劣化したりして電子
ビームが所定の位置を照射しなくなつたりした場
合や、原材料物質が突沸を起こした場合など、の
異常状態をいち早く検出してこれに伴う事故を未
然に防止することの出来る電子銃蒸着装置が提供
される。
(Effects of the Invention) According to the present invention, the electron beam may no longer irradiate a predetermined position due to a break in the electromagnet for deflecting the electron beam or the permanent magnet has deteriorated, or when the raw material is Provided is an electron gun evaporation apparatus that can quickly detect abnormal conditions such as bumping and prevent accidents associated with the abnormal conditions.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の実施例の電子銃蒸着装置の
概略の横断面図。第2図、第3図は、従来の同様
の図。第4図は、エミツシヨン電流と反射電子コ
レクター電流の関係を示すグラフ。 1……電子銃本体、2……電子ビーム軌道、3
……反射電子軌道、4……フイラメント、5……
原材料物質、6……ルツボ、7……電子ビーム偏
向用磁石(電磁石又は永久磁石)、8……水冷パ
イプ、9……反射電子コレクター、10……絶縁
石、11……反射電子検出器、12……電子銃電
源、13……反射電子取り込み部、14……反射
電子シールド。
FIG. 1 is a schematic cross-sectional view of an electron gun evaporation apparatus according to an embodiment of the present invention. 2 and 3 are similar conventional views. FIG. 4 is a graph showing the relationship between emission current and backscattered electron collector current. 1...Electron gun body, 2...Electron beam trajectory, 3
...Reflected electron orbit, 4...Filament, 5...
Raw material, 6... Crucible, 7... Magnet for electron beam deflection (electromagnet or permanent magnet), 8... Water cooling pipe, 9... Backscattered electron collector, 10... Insulating stone, 11... Backscattered electron detector, 12... Electron gun power supply, 13... Backscattered electron intake section, 14... Backscattered electron shield.

Claims (1)

【特許請求の範囲】[Claims] 1 真空中で高電圧を印加して電子を加速し、こ
の加速された電子を磁界によつて偏向させて、ル
ツボ内に納められた原材料物質を照射し、当該原
材料物質を加熱、溶融して蒸発させ、半導体基板
等の上に薄膜を堆積させる電子銃蒸着装置におい
て、電子銃本体の後方に該照射された原材料物質
から反射した電子を検出するためのコレクターを
取り付けるとともに、該コレクターに入射する電
子の量の急変を検知することで該電子銃の異常を
検出する手段を設けたことを特徴とする電子銃蒸
着装置。
1 Accelerate electrons by applying a high voltage in a vacuum, deflect the accelerated electrons using a magnetic field, and irradiate the raw material contained in the crucible to heat and melt the raw material. In an electron gun evaporation device that evaporates and deposits a thin film on a semiconductor substrate, etc., a collector is attached to the rear of the electron gun body to detect electrons reflected from the irradiated raw material, and the electrons are incident on the collector. An electron gun evaporation apparatus comprising means for detecting an abnormality in the electron gun by detecting a sudden change in the amount of electrons.
JP19576386A 1986-08-21 1986-08-21 Vapor deposition device using electron gun Granted JPS6350461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19576386A JPS6350461A (en) 1986-08-21 1986-08-21 Vapor deposition device using electron gun

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19576386A JPS6350461A (en) 1986-08-21 1986-08-21 Vapor deposition device using electron gun

Publications (2)

Publication Number Publication Date
JPS6350461A JPS6350461A (en) 1988-03-03
JPH036989B2 true JPH036989B2 (en) 1991-01-31

Family

ID=16346551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19576386A Granted JPS6350461A (en) 1986-08-21 1986-08-21 Vapor deposition device using electron gun

Country Status (1)

Country Link
JP (1) JPS6350461A (en)

Also Published As

Publication number Publication date
JPS6350461A (en) 1988-03-03

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