JPH0370595B2 - - Google Patents

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Publication number
JPH0370595B2
JPH0370595B2 JP61270896A JP27089686A JPH0370595B2 JP H0370595 B2 JPH0370595 B2 JP H0370595B2 JP 61270896 A JP61270896 A JP 61270896A JP 27089686 A JP27089686 A JP 27089686A JP H0370595 B2 JPH0370595 B2 JP H0370595B2
Authority
JP
Japan
Prior art keywords
positioning pin
film
weight
layer
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61270896A
Other languages
Japanese (ja)
Other versions
JPS63126682A (en
Inventor
Masahiro Kasai
Norio Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Subaru Corp
Original Assignee
Fuji Jukogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Jukogyo KK filed Critical Fuji Jukogyo KK
Priority to JP27089686A priority Critical patent/JPS63126682A/en
Publication of JPS63126682A publication Critical patent/JPS63126682A/en
Publication of JPH0370595B2 publication Critical patent/JPH0370595B2/ja
Granted legal-status Critical Current

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  • Chemical Treatment Of Metals (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、鋼板にナツト等を溶接するのに利用
されるプロジエクシヨン溶接用の位置決めピンに
関し、とくにそのピン表面に化学緻密化法により
強化された複合セラミツク皮膜を形成する方法に
ついての提案である。
[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a positioning pin for projection welding used for welding nuts etc. to steel plates, and in particular, the pin surface is formed by chemical densification. This is a proposal for a method of forming a reinforced composite ceramic coating.

(従来の技術) 特開昭61−27185にプラズマ溶射層を被覆形成
したプロジエクシヨン溶接用位置決めピンが開示
されている。
(Prior Art) Japanese Patent Laid-Open No. 61-27185 discloses a positioning pin for projection welding coated with a plasma sprayed layer.

プロジエクシヨン溶接用位置決めピンは、第2
図および第3図に示すように、例えば鋼板1にナ
ツト2をプロジエクシヨン溶接する際、鋼板1と
ナツト2の位置決めを行うために用いられる。第
2図は、溶接前の状態を示し、位置決めピン3は
空気圧またはスプリングなどの附勢手段によつて
上方に常に持ち上げられた状態になつており、ナ
ツト2を鋼板1より離した状態で保持している。
第3図は溶接のために上部電極6が打ち降ろされ
た状態を示し、ナツト2と位置決めピン3は上方
へ附勢力に抗して下方に押し下げられている。
The positioning pin for projection welding is the second
As shown in FIG. 3 and FIG. 3, it is used to position the steel plate 1 and the nut 2, for example, when projection welding the nut 2 to the steel plate 1. Figure 2 shows the state before welding, in which the positioning pin 3 is constantly lifted upward by biasing means such as air pressure or a spring, and the nut 2 is held apart from the steel plate 1. are doing.
FIG. 3 shows the state in which the upper electrode 6 is lowered for welding, and the nut 2 and positioning pin 3 are pushed down against the upward force.

この位置決めピンの材質は、何回も下部電極7
の内壁面と摺接しながら上下動させるため耐摩耗
性を必要とすること、電気的に絶縁性のものであ
ることが必要である。
The material of this positioning pin is the same as that of the lower electrode 7.
Since it moves up and down while slidingly contacting the inner wall surface, it needs to be wear resistant and electrically insulating.

従来の位置決めピンは、鋼材製のピンの基材を
ベークライト等で覆つて絶縁するとか、特殊な金
属材料(KCF材)よりなるピンの表面を酸化さ
せて金属酸化物の皮膜を形成するとか、前記特開
昭61−27185に開示されているプラズマ溶射法に
よるセラミツク皮膜を形成することによつて、電
機絶縁性と耐摩耗性の向上をはかつてきた。
Conventional positioning pins are made by insulating the base material of the steel pin by covering it with Bakelite, etc., or by oxidizing the surface of the pin made of a special metal material (KCF material) to form a metal oxide film. By forming a ceramic film by the plasma spraying method disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 61-27185, improvements in electrical insulation properties and wear resistance have been achieved.

(発明が解決しようとする問題点) 上記の位置決めピンでは、耐摩耗性が不十分で
あつたり、微小電流の通過によりナツト溝が荒れ
るなどの問題があり、またプラズマ溶射法による
セラミツク皮膜では、気孔が不可避であり、密着
力が不十分で繰返しかかる熱衝撃により剥離する
という問題点があつた。そのため耐摩耗性、絶縁
性が十分で、熱衝撃による皮膜の剥離が生じな
い、無気孔で密着力、耐摩耗性に優れ、十分に強
度があり、電気絶縁性の優れた位置決めピンが望
まれていた。
(Problems to be Solved by the Invention) The above-mentioned positioning pins have problems such as insufficient wear resistance and the nut groove becoming rough due to the passage of minute currents. There were problems in that pores were inevitable, adhesion was insufficient, and peeling occurred due to repeated thermal shocks. Therefore, there is a need for a positioning pin that has sufficient wear resistance and insulation properties, does not cause peeling of the coating due to thermal shock, is non-porous, has excellent adhesion, wear resistance, is sufficiently strong, and has excellent electrical insulation properties. was.

(問題点を解決するための手段) 本発明は、従来技術の下で製造されたピンが有
する前記問題点を除去・改善することを目的とす
るものであり、そのために本発明は、かかるピン
表面に、化学緻密化法によつて強化された複合セ
ラミツク皮膜を形成することにより、かかる問題
点を解消した。
(Means for Solving the Problems) The present invention aims to eliminate and improve the above-mentioned problems that pins manufactured under the conventional technology have. This problem was solved by forming a reinforced composite ceramic film on the surface using a chemical densification method.

すなわち本発明は、鋼材よりなるピン表面に、
50%のクロム酸水溶液に、それと同重量で
SiO2:50〜95重量%、Al2O3:5〜50重量%およ
び不可避的不純物よりなる粉末を混合して得られ
るスラリーを塗布し、その後焼成することにより
多孔質セラミツク層を形成し、次いで、この多孔
質セラミツク層の表面に、CrO3水溶液を塗布し
たのち焼成する処理を少なくとも2回以上繰返す
ことにより上記多孔質セラミツク層中にCr2O3
含浸させ、これによつて化学的に緻密化された層
を有する皮膜厚さ30〜200μmの複合セラミツク
皮膜を形成することを特徴とするプロジエクシヨ
ン溶接用位置決めピンへのセラミツク皮膜の形成
方法に関するものである。
That is, in the present invention, on the surface of the pin made of steel,
Add the same weight to a 50% chromic acid aqueous solution.
A porous ceramic layer is formed by applying a slurry obtained by mixing powders consisting of SiO 2 : 50 to 95% by weight, Al 2 O 3 : 5 to 50% by weight, and unavoidable impurities, and then firing. Next, the process of applying a CrO 3 aqueous solution to the surface of this porous ceramic layer and then firing it is repeated at least twice to impregnate Cr 2 O 3 into the porous ceramic layer, thereby chemically infiltrating the porous ceramic layer. The present invention relates to a method for forming a ceramic film on a positioning pin for projection welding, which comprises forming a composite ceramic film having a thickness of 30 to 200 μm and having a highly densified layer.

(作用) 本発明の方法は、まず、予め脱脂、脱錆、ま
た必要に応じてサンドブラスト処理等の前処理を
施した鋼材よりなるピン基材の表面に、50%のク
ロム酸水溶液に、それと同重量でSiO2:50〜95
重量%、Al2O3:5〜50重量%および不可避的不
純物よりなる粉末を混合してなるセラミツクスラ
リーを、浸漬法、あるいはスプレー法により塗布
し、 次いで、このスラリー塗布後のピンを乾燥し
た後、さらに400〜600℃で焼成することにより多
孔質セラミツク層を形成し、 その後、かかる多孔質セラミツク層の表面
に、CrO3水溶液を浸漬法あるいは刷毛塗り等の
方法により被成してから乾燥し、さらに400〜600
℃で焼成することにより、酸化物デポジツト
(Cr2O3)を含浸させることで、化学的に緻密化
された層を有する複合セラミツク皮膜を形成する
方法であり、 とくにこの化学緻密化法を少なくとも2回以上
繰返し施すことにより、層厚30〜200μmの無気
孔で密着力、耐摩耗性に優れ、十分に強度があ
り、電気絶縁性の優れた複合セラミツク皮膜を被
成してなる位置決めピンを得る方法である。
(Function) The method of the present invention is to first apply a 50% chromic acid aqueous solution to the surface of a pin base material made of steel that has been previously degreased, derusted, and, if necessary, subjected to pretreatment such as sandblasting. SiO 2 at the same weight: 50-95
A ceramic slurry prepared by mixing a powder consisting of 5 to 50% by weight of Al 2 O 3 and unavoidable impurities was applied by dipping or spraying, and the pins coated with this slurry were then dried. After that, a porous ceramic layer is formed by further firing at 400 to 600°C, and then a CrO 3 aqueous solution is coated on the surface of the porous ceramic layer by dipping or brush coating, and then dried. and another 400-600
This is a method of forming a composite ceramic film having a chemically densified layer by impregnating it with an oxide deposit (Cr 2 O 3 ) by firing at ℃. By repeating the application two or more times, a positioning pin is formed that is coated with a composite ceramic film with a layer thickness of 30 to 200 μm that is non-porous, has excellent adhesion and wear resistance, is sufficiently strong, and has excellent electrical insulation properties. This is the way to get it.

第1図は、本発明に従つて化学緻密化法により
強化した複合セラミツク皮膜部分の皮膜断面組織
写真で、同図aはSEM2次電子像(×660)、同図
bは光学顕微鏡写真(×660)である。第1図a,
bに示される複合セラミツク皮膜とピン基材との
境界に鉄、クロムを含む中間層が形成され、この
中間層により高密着力を生じ、セラミツクスラリ
ーコーテイングによる硬質セラミツク粒子と強固
に酸化物結合することにより、無気孔で高硬度の
複合セラミツク皮膜となつている。
Figure 1 is a photograph of the cross-sectional structure of a composite ceramic film strengthened by chemical densification according to the present invention. 660). Figure 1a,
An intermediate layer containing iron and chromium is formed at the boundary between the composite ceramic coating and the pin base material shown in b, and this intermediate layer generates high adhesion and forms a strong oxide bond with the hard ceramic particles formed by ceramic slurry coating. This results in a pore-free, highly hard composite ceramic film.

なお、本発明に従う化学緻密化法によつて、多
孔質セラミツク層中に酸化物デポジツトを含浸さ
せて形成する複合セラミツク皮膜は、プラズマ溶
射法によるセラミツク皮膜などには見られない化
学緻密化による強化が施されるため、気孔をなく
すことができる。このため微小電流の通過による
ナツト溝の荒れ、コーテイング皮膜の欠損が発生
しない。
Furthermore, the composite ceramic film formed by impregnating an oxide deposit into a porous ceramic layer by the chemical densification method according to the present invention is strengthened by chemical densification, which is not seen in ceramic films made by plasma spraying. is applied, so pores can be eliminated. Therefore, the nut groove does not become rough or the coating film becomes damaged due to the passage of a minute current.

本発明の形成方法によつて得られる複合セラミ
ツク皮膜の硬さは、Hv1200〜1500で、プラズマ
溶射法によるセラミツク皮膜の硬さHv700〜1000
と比較し、高硬度であり、耐摩耗性に優れてい
る。
The hardness of the composite ceramic film obtained by the formation method of the present invention is Hv1200-1500, and the hardness of the ceramic film obtained by the plasma spraying method is Hv700-1000.
It has high hardness and excellent wear resistance compared to other materials.

また、かかる化学緻密化法によつて形成する皮
膜構成粒子の寸法は小さく、プラズマ溶射法皮膜
が数10μmになるのに対して、1μm以下と非常に
小さい。このことは、本発明方法によつて形成し
た複合セラミツク皮膜は、耐摩耗性にも効果があ
ることを示している。それは、粒子が非常に小さ
いため、皮膜表面から摩耗により若干の粒子が脱
落しても、それによつて生ずる穴は無視し得る
が、プラズマ溶射法によるセラミツク皮膜の場合
には、粒子寸法がはるかに大きいため、これが摩
耗および摩擦抵抗によつて脱落した場合は穴の寸
法は大きなものとなり、皮膜のスポーリング、ピ
ーリングあるいは剥離の原因となるからである。
Furthermore, the size of the particles forming the coating formed by such chemical densification is very small, at 1 μm or less, whereas the plasma spray coating has a size of several tens of μm. This indicates that the composite ceramic coating formed by the method of the present invention is also effective in wear resistance. This is because the particles are very small, so even if some particles fall off the coating surface due to wear, the resulting holes can be ignored, but in the case of ceramic coatings made by plasma spraying, the particle size is much larger. Because of their large size, if they fall off due to wear and frictional resistance, the size of the holes will become large, causing spalling, peeling, or peeling of the film.

次に、本発明方法によつて形成した複合セラミ
ツク皮膜とピン基材との密着力は、直径40mm、長
さ40mmの棒鋼2個の一方の断面に皮膜厚さ0.5mm
の被覆処理を施し、他方の断面を溶融アルミナで
ブラストして粗面とし、これらの被覆面とブラス
トした粗面を接着剤で接合し引張試験を行う方法
により、その値は800Kg/cm2以上であり、プラズ
マ溶射法によるセラミツク皮膜とピン基材との密
着力250〜350Kg/cm2と比較して非常に密着力の優
れた皮膜となつており、また耐熱衝撃性に優れて
いる。600℃から水中投下する熱サイクルを繰り
返し行つたところ、プラズマ溶射法によるセラミ
ツク皮膜では20〜30回で剥離したが、本発明によ
る皮膜は100回でも剥離しない。
Next, the adhesion between the composite ceramic film formed by the method of the present invention and the pin base material is determined by applying a film thickness of 0.5 mm to one cross section of two steel bars with a diameter of 40 mm and a length of 40 mm.
The value is 800Kg/cm 2 or more by applying coating treatment, blasting the other cross section with molten alumina to make it a rough surface, joining these coated surfaces and the blasted rough surface with adhesive, and conducting a tensile test. Compared to the adhesion of 250 to 350 kg/cm 2 between the ceramic coating and the pin base material obtained by plasma spraying, the coating has excellent adhesion and also has excellent thermal shock resistance. When the ceramic film was repeatedly subjected to a thermal cycle of dropping the material into water from 600°C, it peeled off after 20 to 30 times with the ceramic coating made by plasma spraying, but the film according to the present invention did not peel off even after 100 times.

また、本発明方法によつて形成した複合セラミ
ツク皮膜の電気伝導度は、10-6〜10-7Ω-1cmで位
置決めピンとして十分優れた絶縁性を有してい
る。
Further, the electrical conductivity of the composite ceramic film formed by the method of the present invention is 10 -6 to 10 -7 Ω -1 cm, and has sufficient insulation properties to be used as a positioning pin.

本発明形成方法において、始めに多孔質セラミ
ツク層を形成する際、SiO2:50〜95重量%、
Al2O3:5〜50重量%を50%のクロム酸水溶液に
混合してスラリーとするのは、ピン基材とセラミ
ツク皮膜との膨張係数(S45C:13.6×10-6/℃、
Al2O3:5.4×10-6/℃、Cr2O3:8.8×10-6/℃、
SiO2:10.3×10-6/℃)を考慮し、SiO2が50重量
%以下ではセラミツク皮膜の膨張係数が小さくな
り、繰返し加熱で剥離しやすくなり、Al2O35重
量%以下ではピン基材に塗布する際、被覆しにく
いため5重量%を必要とする。従つて、SiO2
50〜95重量%の範囲内にする必要がある。Al2O3
は50重量%以上にあるとAl2O3の膨張係数が小さ
いため、繰返し加熱で剥離しやすくなるため、
Al2O3は5〜50重量%の範囲内にする必要があ
る。
In the forming method of the present invention, when first forming a porous ceramic layer, SiO2 : 50 to 95% by weight,
Al 2 O 3 : 5 to 50% by weight is mixed with a 50% chromic acid aqueous solution to make a slurry, because the expansion coefficient of the pin base material and the ceramic film (S45C: 13.6×10 -6 /℃,
Al 2 O 3 : 5.4×10 -6 /℃, Cr 2 O 3 : 8.8×10 -6 /℃,
SiO 2 : 10.3×10 -6 /°C), if SiO 2 is less than 50% by weight, the expansion coefficient of the ceramic film will be small and it will be easy to peel off with repeated heating, and if Al 2 O 3 is less than 5% by weight, it will be easily peeled off. When applied to a base material, 5% by weight is required because it is difficult to coat. Therefore, SiO2 is
It must be within the range of 50-95% by weight. Al2O3 _
If it is over 50% by weight, the expansion coefficient of Al 2 O 3 is small and it becomes easy to peel off with repeated heating.
Al 2 O 3 should be in the range of 5 to 50% by weight.

また、本発明において形成する化学緻密化法に
よつて強化された複合セラミツク皮膜層の厚さを
30〜200μmとしたのは、30μm以下では電気絶縁
性が低下し、また摩耗による寿命が短くなるため
である。また、200μmまでとしたのは、200μm
以上になると、化学緻密化処理において、CrO3
水溶液を含浸焼成させる際、拡散しにくくなるた
めである。従つて、複合セラミツク皮膜厚さは30
〜200μmの範囲内にする必要がある。
In addition, the thickness of the composite ceramic film layer strengthened by the chemical densification method formed in the present invention is
The reason why the thickness is 30 to 200 μm is that if the thickness is less than 30 μm, the electrical insulation properties will be lowered and the life span will be shortened due to wear. Also, the maximum limit of 200μm is 200μm.
In the chemical densification treatment, CrO 3
This is because it becomes difficult to diffuse when an aqueous solution is impregnated and fired. Therefore, the composite ceramic coating thickness is 30
It is necessary to keep it within the range of ~200 μm.

次に本発明形成方法についての実施例を説明す
る。
Next, examples of the forming method of the present invention will be described.

(実施例) 第2図および第3図は、鋼板1にナツト2をプ
ロジエクシヨン溶接する際の、位置決めピン3と
上部電極6および下部電極7との関係を示すプロ
ジエクシヨン溶接手段の一部破断正面図である。
(Example) FIGS. 2 and 3 show an example of a projection welding method showing the relationship between the positioning pin 3, the upper electrode 6, and the lower electrode 7 when projecting the nut 2 to the steel plate 1. FIG.

第2図は、位置決めピン3にナツト2を装着し
た溶接前の状態を示し、位置決めピン3は図示し
ない空気供給源から空気供給口4を経て、キヤン
バー5内へと導入された圧搾空気により常に上方
へ押し上げられた状態となるよう付勢され、ナツ
ト2は鋼板1より離間した位置に保持され、鋼板
1と電気的に絶縁された状態を示す。
FIG. 2 shows the positioning pin 3 with the nut 2 attached before welding. The nut 2 is biased to be pushed upward, and the nut 2 is held at a position apart from the steel plate 1, and is electrically insulated from the steel plate 1.

第3図は、上部電極6の下降により、ナツト2
および位置決めピン3は、前述した上方への付勢
に抗して下部電極7の内壁面に摺接され下方へ押
し下げられ、鋼板1へナツト2を圧接し溶接され
た状態を示す。
FIG. 3 shows that when the upper electrode 6 is lowered, the nut 2
The positioning pin 3 is shown in a state in which it slides against the inner wall surface of the lower electrode 7 and is pushed downward against the above-mentioned upward bias, and the nut 2 is pressed against the steel plate 1 and welded.

このようなプロジエクシヨン溶接手段において
使用される位置決めピン3は、第4図に示すごと
く、円柱状の一端に鍔部10を設け、他端を円錐
部11に形成した形状としたS45Cよりなる位置
決めピン基材8を作り、その基材8に前処理とし
て脱脂、グリツトブラスト処理を施し、次に50%
のクロム酸水溶液に、それと同重量で重量比1:
1のSiO2とAl2O3の粉末を混合し、磁性ボールミ
ルを用いて18時間混練し、スラリーを調整し、コ
ーテイング工程として前記スラリー中に前記前処
理した位置決めピンを浸漬して30〜80μmの厚み
で塗布し、乾燥させた後、電気炉を用いて600
℃/時間で昇温し、550℃で1時間保持した後、
100℃/時間で降温冷却して、気孔率10〜25%の
多孔質セラミツク層を形成させた。
The positioning pin 3 used in such projection welding means is made of S45C and has a cylindrical shape with a collar 10 at one end and a conical part 11 at the other end, as shown in FIG. A positioning pin base material 8 is made, and the base material 8 is subjected to degreasing and grit blasting as a pretreatment, and then 50%
of chromic acid in an aqueous solution of chromic acid at a weight ratio of 1:
The SiO 2 and Al 2 O 3 powders in Step 1 were mixed and kneaded for 18 hours using a magnetic ball mill to prepare a slurry, and as a coating process, the pretreated positioning pin was immersed in the slurry to form a powder with a thickness of 30 to 80 μm. After coating the film to a thickness of
After increasing the temperature at ℃/hour and holding at 550℃ for 1 hour,
The temperature was lowered and cooled at a rate of 100° C./hour to form a porous ceramic layer with a porosity of 10 to 25%.

次に化学緻密処理として、前記多孔質セラミツ
ク層を形成した位置決めピンを、比重1.30〜1.70
のCrO3水溶液に含浸し、600℃/時間で昇温させ
550℃で1時間保持した後、100℃/時間で降温冷
却することにより、CrO3をCr2O3に変換すること
により、化学的に緻密化した複合セラミツク皮膜
層9を得た。この化学緻密化処理を8〜15回繰返
した後、表面仕上げとしてナイロンバフにてコー
テイング表面を仕上げ、目的とする位置決めピン
を得た。
Next, as a chemical densification process, the positioning pin with the porous ceramic layer formed thereon is
CrO 3 aqueous solution and heated at 600℃/hour.
After holding at 550° C. for 1 hour, the temperature was lowered and cooled at a rate of 100° C./hour to convert CrO 3 to Cr 2 O 3 to obtain a chemically densified composite ceramic film layer 9. After repeating this chemical densification treatment 8 to 15 times, the coating surface was finished with a nylon buff to obtain the desired positioning pin.

従来のKCF材より皮膜を形成した位置決めピ
ンを前記のプロジエクシヨン溶接に用いた結果、
約48000回の仕様により表面にカジリが生じ交換
しなければならなかつた。
As a result of using a positioning pin with a film formed from conventional KCF material for the projection welding described above,
Due to the specifications of approximately 48,000 cycles, galling occurred on the surface and it had to be replaced.

一方、本発明方法により形成した複合セラミツ
ク皮膜を有する位置決めピンは、約400000回使用
した状態で殆んど損傷がなく、約9倍以上の優れ
た耐摩耗性を有することが確認された。また皮膜
の表面が摩耗等により若干の粒子脱落が発生した
ものであつても、その穴は殆ど無視し得るほど微
細なものであり、スポーリング、ピーリングの原
因となる程のものでなく、また皮膜の電気伝導度
は10-6〜10-7Ω-1cmであり、プロジエクシヨン溶
接の際の電気分流を充分に防ぎ、製品を損傷する
ことなく、位置決めピンの品質が長期間確保さ
れ、耐久性に優れていることが確認された。
On the other hand, it was confirmed that the positioning pin having the composite ceramic film formed by the method of the present invention showed almost no damage even after being used about 400,000 times, and had an excellent wear resistance of about 9 times or more. Furthermore, even if some particles have fallen off the surface of the film due to abrasion, etc., the holes are so minute that they can be ignored and are not large enough to cause spalling or peeling. The electrical conductivity of the film is 10 -6 ~ 10 -7 Ω -1 cm, which sufficiently prevents electrical shunt during projection welding, ensuring the quality of the locating pin for a long time without damaging the product. It was confirmed that it has excellent durability.

(発明の効果) 以上説明したように、本発明形成方法によれ
ば、得られた位置決めピンは、従来のプラズマ溶
射法、KCF材による金属酸化物の皮膜を形成す
るものに比べると、 耐摩耗性、絶縁性が不十分であることに起因
する損傷を防止することができ、 従来の位置決めピンに比し優れた耐久性があ
り、 皮膜の電気伝導度は10-6〜10-7Ω-1cmであ
り、プロジエクシヨン溶接の際、電気分流を充
分に防ぎ、製品を損傷することなく品質の安定
した溶接品を長期間供給し得るものであり、 それ故に、生産性の向上に大きく寄与する。
(Effects of the Invention) As explained above, according to the forming method of the present invention, the obtained positioning pin has higher wear resistance than the conventional plasma spraying method or the one in which a metal oxide film is formed using KCF material. It can prevent damage caused by insufficient properties and insulation, and has superior durability compared to conventional positioning pins, and the electrical conductivity of the film is 10 -6 to 10 -7 Ω - 1 cm, it sufficiently prevents electrical shunt during projection welding, and can supply welded products with stable quality for a long period of time without damaging the product.Therefore, it greatly improves productivity. Contribute.

なお、ナツトを鋼板にプロジエクシヨン溶接す
る実施態様について述べたが、他のプロジエクシ
ヨン溶接用位置決めピンに適用することも可能で
ある。
Although the embodiment has been described in which a nut is projection welded to a steel plate, it is also possible to apply the present invention to other positioning pins for projection welding.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による化学緻密化法により強化
した複合セラミツク皮膜の断面組織写真で、aは
SEM2次電子像(×660)、bは光学顕微鏡写真
(×660)、第2図、第3図は鋼板にナツトをプロ
ジエクシヨン溶接する際の、位置決めピンと電極
との関係を示す一部破断正面図、第4図は位置決
めピンの例を示す一部破断正面図を示す。 1……鋼板、2……ナツト、3……位置決めピ
ン、4……空気供給口、5……キヤンバー、6…
…上部電極、7……下部電極、8……ピン基材、
9……複合セラミツク皮膜層、10……鍔、11
……円錐部。
Figure 1 is a photograph of the cross-sectional structure of a composite ceramic film strengthened by the chemical densification method according to the present invention, where a is
SEM secondary electron image (×660), b is an optical micrograph (×660), and Figures 2 and 3 are partial fractures showing the relationship between the locating pin and electrode during projection welding of a nut to a steel plate. FIG. 4 is a partially cutaway front view showing an example of a positioning pin. 1... Steel plate, 2... Nut, 3... Locating pin, 4... Air supply port, 5... Camber, 6...
...Top electrode, 7...Bottom electrode, 8...Pin base material,
9... Composite ceramic film layer, 10... Tsuba, 11
...Conical part.

Claims (1)

【特許請求の範囲】 1 鋼材よりなるピン表面に、50%のクロム酸水
溶液に、それと同重量でSiO2:50〜95重量%、
Al2O3:5〜50重量%および不可避的不純物より
なる粉末を混合して得られるスラリーを塗布し、
その後焼成することにより多孔質セラミツク層を
形成し、 次いで、この多孔質セラミツク層の表面に、
CrO3水溶液を塗布したのち焼成する処理を少な
くとも2回以上繰返すことにより上記多孔質セラ
ミツク層中にCr2O3を含浸させ、 これによつて化学的に緻密化された層を有する
皮膜厚さ30〜200μmの複合セラミツク皮膜を形
成することを特徴とするプロジエクシヨン溶接用
位置決めピンへのセラミツク皮膜の形成方法。
[Claims] 1. On the surface of a pin made of steel material, SiO 2 :50 to 95% by weight is added to the same weight of 50% chromic acid aqueous solution.
Applying a slurry obtained by mixing powder consisting of Al 2 O 3 :5 to 50% by weight and inevitable impurities,
A porous ceramic layer is then formed by firing, and then, on the surface of this porous ceramic layer,
By repeating the process of applying a CrO 3 aqueous solution and then firing it at least twice, the porous ceramic layer is impregnated with Cr 2 O 3 , thereby creating a chemically densified layer. A method for forming a ceramic film on a positioning pin for projection welding, the method comprising forming a composite ceramic film with a thickness of 30 to 200 μm.
JP27089686A 1986-11-15 1986-11-15 Positioning pin for projection welding subjected to ceramic coating by chemical compaction method Granted JPS63126682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27089686A JPS63126682A (en) 1986-11-15 1986-11-15 Positioning pin for projection welding subjected to ceramic coating by chemical compaction method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27089686A JPS63126682A (en) 1986-11-15 1986-11-15 Positioning pin for projection welding subjected to ceramic coating by chemical compaction method

Publications (2)

Publication Number Publication Date
JPS63126682A JPS63126682A (en) 1988-05-30
JPH0370595B2 true JPH0370595B2 (en) 1991-11-08

Family

ID=17492482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27089686A Granted JPS63126682A (en) 1986-11-15 1986-11-15 Positioning pin for projection welding subjected to ceramic coating by chemical compaction method

Country Status (1)

Country Link
JP (1) JPS63126682A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001340972A (en) * 2000-06-02 2001-12-11 Usui Internatl Ind Co Ltd Projection welding method for high carbon steel and high tensile low alloy steel
US6805968B2 (en) 2001-04-26 2004-10-19 Tocalo Co., Ltd. Members for semiconductor manufacturing apparatus and method for producing the same
US7214046B2 (en) 2002-04-11 2007-05-08 Luka Gakovic Ceramic center pin for compaction tooling and method for making same
US8312612B2 (en) 2002-04-11 2012-11-20 Blue Sky Vision Partners, Llc Refurbished punch tip and method for manufacture and refurbishing
US7033156B2 (en) 2002-04-11 2006-04-25 Luka Gakovic Ceramic center pin for compaction tooling and method for making same
JP2013153029A (en) 2012-01-25 2013-08-08 Hitachi High-Technologies Corp Plasma processing device and plasma processing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6143178Y2 (en) * 1979-07-11 1986-12-06
JPS6068181A (en) * 1983-09-26 1985-04-18 Toshiba Corp Jig for welding
JPH0312465Y2 (en) * 1985-04-30 1991-03-25

Also Published As

Publication number Publication date
JPS63126682A (en) 1988-05-30

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