JPH0373355B2 - - Google Patents
Info
- Publication number
- JPH0373355B2 JPH0373355B2 JP58094487A JP9448783A JPH0373355B2 JP H0373355 B2 JPH0373355 B2 JP H0373355B2 JP 58094487 A JP58094487 A JP 58094487A JP 9448783 A JP9448783 A JP 9448783A JP H0373355 B2 JPH0373355 B2 JP H0373355B2
- Authority
- JP
- Japan
- Prior art keywords
- ultrapure water
- carbon dioxide
- resistivity
- filter
- dioxide gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は、ウエーハ面上を超純水で洗浄中に静
電気による放電破壊現象が生じるのを阻止すべ
く、この超純水中による炭酸ガスを吹き込み溶解
させ、比抵抗値を低下させるもので、炭酸ガスの
超純水中への吹き込こみ量を電磁弁で調節し、均
一に炭酸ガスを溶解するフイルターの出口に配し
た比抵抗値センサでこの電磁弁を制御し、ウエー
ハ面上に噴出される超純水の比抵抗値を常に一定
範囲に保つ超純水の製法並びにその装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION In order to prevent discharge breakdown caused by static electricity while cleaning a wafer surface with ultra-pure water, the present invention aims to dissolve carbon dioxide by blowing carbon dioxide into the ultra-pure water. The amount of carbon dioxide gas injected into ultrapure water is adjusted using a solenoid valve, and this solenoid valve is controlled by a resistivity value sensor placed at the outlet of the filter that uniformly dissolves carbon dioxide gas. The present invention also relates to a method for producing ultrapure water and an apparatus therefor, which always maintains the resistivity value of ultrapure water jetted onto a wafer surface within a certain range.
ICウエーハなどの製造には超純水が使用され
る。この超純水とは、微粒子、微生物、イオン性
化合物質は全んど含まず、比抵抗値は16〜
18MΩ・cm(25℃)と高く絶縁性を呈する。超薄
板の砥石でウエーハを細断する行程において、そ
の摩擦によりウエーハ面には静電気が発生し、ス
ピンナー洗浄(高圧水ジエツト方式)の際にこの
面に超純水を噴出すると、誘電体でもある超純水
を通して静電気による放電破壊が生じ、ウエーハ
面上の微細回路は一部溶断し短絡する。放電破壊
を防ぐには超純水の比抵抗を低げれば良いが、自
由電子をもつ金属イオンの混入は拡散によりIC
ウエーハ自体を毀損するので採用できず、ウエー
ハ面に噴出させる超純水の水圧や噴射角度の調節
により可及的に放電破壊を阻止している。しか
し、噴射角度の調節等では歩留りはさほどに向上
せず別途の放電対策が考えられてきた。本発明
は、純度が高く水に可溶な炭酸ガスを超純水に吹
きこみ比抵抗を著しく低下する方法を採択し、あ
る程度の導電性を有する超純水で静電気による放
電を阻止するもので、以下図面に基づいて詳しく
説明する。 Ultrapure water is used to manufacture IC wafers and other products. This ultrapure water does not contain any particulates, microorganisms, or ionic compounds, and has a specific resistance value of 16~
Exhibits high insulation properties of 18MΩ・cm (25℃). During the process of shredding a wafer with an ultra-thin grindstone, static electricity is generated on the wafer surface due to the friction, and when ultrapure water is jetted onto this surface during spinner cleaning (high-pressure water jet method), even dielectric materials can be damaged. Electrostatic discharge damage occurs when some ultrapure water passes through the water, causing some of the microcircuits on the wafer surface to melt and short-circuit. In order to prevent discharge damage, it is possible to lower the specific resistance of ultrapure water, but the incorporation of metal ions with free electrons can cause the IC to deteriorate due to diffusion.
This cannot be used because it damages the wafer itself, and discharge destruction is prevented as much as possible by adjusting the water pressure and spray angle of ultrapure water that is sprayed onto the wafer surface. However, adjustment of the injection angle, etc. did not significantly improve the yield, and separate discharge countermeasures have been considered. The present invention adopts a method of blowing highly pure water-soluble carbon dioxide gas into ultrapure water to significantly lower the resistivity, and uses ultrapure water that has a certain degree of conductivity to prevent discharge due to static electricity. , will be explained in detail below based on the drawings.
1は純度の高い炭酸ガスを充填したボンベ、2
は減圧弁、3は電磁弁で比抵抗調節器4により開
閉を繰り返す。5はフイルターでガスの中の不純
分を除去する。6は手動調節弁、8は電磁弁、9
は逆止弁でこれら炭酸ガス供給手段からの炭酸ガ
スはガス流路10で超純水流路11に吹きこまれ
る。超純水流路11の手前に炭酸ガスの逆流を阻
止する逆止弁12を配し、ガス流路10との交差
部の下流側に気泡状の炭酸ガスの微細化と超純水
中の微粒子や微生物を除去するフイルター13を
配する。超純水流路11の更に下流に比抵抗調節
器4の入力となる比抵抗値センサ14と比抵抗警
報器15の入力となる比抵抗値センサ16を配置
する。比抵抗値センサ14の出力が一定範囲の上
限値をこえた時に電磁弁3は開成し、下限値以下
になつた時に閉成するようになつている。17は
ノズル、18は洗浄されるウエーハである。 1 is a cylinder filled with highly pure carbon dioxide gas, 2
3 is a pressure reducing valve, and 3 is a solenoid valve which is repeatedly opened and closed by a resistivity regulator 4. 5 removes impurities from the gas using a filter. 6 is a manual control valve, 8 is a solenoid valve, 9
is a check valve, and the carbon dioxide gas from these carbon dioxide gas supply means is blown into the ultrapure water flow path 11 through the gas flow path 10. A check valve 12 that prevents the backflow of carbon dioxide gas is placed in front of the ultrapure water flow path 11, and downstream of the intersection with the gas flow path 10, the bubble-like carbon dioxide gas is atomized and the fine particles in the ultrapure water are disposed. A filter 13 is provided to remove bacteria and microorganisms. Further downstream of the ultrapure water channel 11, a resistivity value sensor 14 serving as an input to the resistivity regulator 4 and a resistivity value sensor 16 serving as an input to the resistivity alarm 15 are arranged. The solenoid valve 3 is opened when the output of the resistivity sensor 14 exceeds the upper limit of a certain range, and is closed when the output falls below the lower limit. 17 is a nozzle, and 18 is a wafer to be cleaned.
次に作動について説明する。超純水は逆止弁1
2、フイルター13、比抵抗値センサ14,1
6、ノズル17からなる流路系を一定の圧力で流
れており、ボンベ1内の炭酸ガスは減圧弁2で所
定圧に減圧され、閉成している電磁弁3に達して
いる。ノズル17を通過する超純水の比抵抗値は
第2図のようにおよそ18MΩ・cm(25℃)であ
る。 Next, the operation will be explained. Check valve 1 for ultrapure water
2, filter 13, specific resistance value sensor 14,1
6. The carbon dioxide gas in the cylinder 1 is flowing at a constant pressure through a channel system consisting of a nozzle 17, and the pressure is reduced to a predetermined pressure by the pressure reducing valve 2, and the carbon dioxide gas reaches the electromagnetic valve 3, which is closed. The specific resistance value of the ultrapure water passing through the nozzle 17 is approximately 18 MΩ·cm (25° C.) as shown in FIG.
比抵抗調節器4を調節しその上限値を
1.0MΩ・cm、下限値を0.1MΩ・cmにセツトし、
手動調節弁6を開成すると、比抵抗値センサ14
は比抵抗調節器4を作動し電磁弁3を開成する。
炭酸ガスはフイルター5を通過し一層純度を高め
たのちガス流路10を経て超純水流路11に吹き
込まれる。圧入された気泡状の炭酸ガスはフイル
ター13により微細化され均一に超純水中に溶解
する。このフイルター13を通過した超純水は微
粒子等を一層除去されると共に溶けこんだ炭酸ガ
スが水分子と熱的平衡解離を生じ水素イオンを電
離させて比抵抗を低下させる。溶解する炭酸ガス
の割合に応じて比抵抗は低下する。比抵抗値が比
抵抗調節器4の設定下限値である0.1MΩ・cmに
近傍に達すると、比抵抗値センサ14はこれを検
知し電磁弁3を閉成し炭酸ガスの吹きこみを停止
する。同時に、電磁弁8を数秒間ほぼ開成してガ
ス流路10に混入した超純水を残留炭酸ガス圧に
より排出し再び閉じる。炭酸ガスの吹きこみ停止
により比抵抗値センサ14を通過する超純水の比
抵抗は第2図の波形のように緩やかに上昇する。
上昇した比抵抗が設定上限値である1.0MΩ・cm
近傍に達すると、比抵抗調節器4は再び電磁弁3
を開成し、炭酸ガスを超純水流路11内に圧入し
て超純水の比抵抗を低下させる。 Adjust the resistivity regulator 4 and set its upper limit value.
1.0MΩ・cm, lower limit set to 0.1MΩ・cm,
When the manual control valve 6 is opened, the resistivity value sensor 14
operates the resistivity regulator 4 and opens the solenoid valve 3.
After the carbon dioxide gas passes through the filter 5 to further increase its purity, it is blown into the ultrapure water flow path 11 through the gas flow path 10. The injected bubbly carbon dioxide gas is atomized by the filter 13 and uniformly dissolved in the ultrapure water. The ultrapure water that has passed through the filter 13 further removes fine particles and the like, and the dissolved carbon dioxide gas undergoes thermal equilibrium dissociation with water molecules to ionize hydrogen ions and lower the specific resistance. The specific resistance decreases depending on the proportion of carbon dioxide gas dissolved. When the resistivity value approaches 0.1 MΩ·cm, which is the lower limit value set by the resistivity regulator 4, the resistivity sensor 14 detects this, closes the solenoid valve 3, and stops blowing carbon dioxide gas. . At the same time, the solenoid valve 8 is opened for several seconds to discharge the ultrapure water that has entered the gas flow path 10 by the residual carbon dioxide gas pressure, and then closed again. When the blowing of carbon dioxide gas is stopped, the resistivity of the ultrapure water passing through the resistivity value sensor 14 gradually increases as shown in the waveform of FIG. 2.
The increased resistivity is the set upper limit of 1.0MΩ・cm
When reaching the vicinity, the resistivity regulator 4 again closes the solenoid valve 3.
is opened and carbon dioxide gas is pressurized into the ultrapure water flow path 11 to lower the specific resistance of the ultrapure water.
比抵抗値センサ14がこの設定上限値と下限値
を検知し比抵抗調節器4により電磁弁3の開閉を
繰り返すことで、ノズル17から噴出される超純
水の比抵抗は第2図のように繰り返し波形を採
り、常に一定範囲内の比抵抗値を有するように制
御される。噴出される超純水が設定許容範囲から
外れると、比抵抗値センサ16を入力とすると比
抵抗警報器15が警報を発する。 The resistivity value sensor 14 detects the set upper and lower limit values, and the resistivity adjuster 4 repeatedly opens and closes the solenoid valve 3, so that the resistivity of the ultrapure water jetted from the nozzle 17 becomes as shown in Figure 2. It takes a repetitive waveform and is controlled to always have a specific resistance value within a certain range. When the jetted ultrapure water deviates from the set allowable range, the resistivity alarm 15 issues an alarm when the resistivity value sensor 16 is input.
静電気を帯びたウエーハ18に高圧の超純水が
噴射され洗浄されるが、この超純水の比抵抗が低
くある程度の導電性を有するために、表面の静電
気は流れる超純水を通して吸収され消滅する。従
来の超純水のように比抵抗が極めて高く誘電体
(絶縁体)として機能する時は、液中放電破壊が
生じやすく、ウエーハ18は溶断損傷を受ける
が、本発明の比抵抗の低い超純水を使用する場合
には、このような静電気による放電は生じない。
炭酸ガスの吹きこみによる比抵抗値の許容範囲と
は、超純水のウエーハ18面上への噴出時に、ウ
エーハ18面上の静電気が、放電で逸散すること
なく、低い比抵抗値によるある程度の導電性で消
滅しえる範囲であり、第2図の範囲に限定される
ものでない。ウエーハ18の電極パターンやその
表面の静電苛量などにより適宜この範囲は決めら
れる。 High-pressure ultrapure water is sprayed onto the electrostatically charged wafer 18 to clean it, but since this ultrapure water has a low resistivity and a certain degree of conductivity, the static electricity on the surface is absorbed through the flowing ultrapure water and disappears. do. When conventional ultrapure water has an extremely high resistivity and functions as a dielectric (insulator), submerged discharge breakdown tends to occur and the wafer 18 is damaged by fusing, but the ultrapure water of the present invention, which has a low resistivity, When using pure water, such discharge due to static electricity does not occur.
The permissible range of resistivity value due to carbon dioxide gas blowing is the range within which the static electricity on the wafer 18 surface is maintained at a low resistivity value without dissipating due to discharge when ultrapure water is jetted onto the wafer 18 surface. This is the range that can be eliminated by the conductivity of , and is not limited to the range shown in FIG. This range is appropriately determined depending on the electrode pattern of the wafer 18, the amount of electrostatic charge on its surface, and the like.
また、炭酸ガスを均一に超純水中に溶解する手
段としてフイルター13に代へて周知の渦流や乱
流発生機構を使用しても良い。洗浄される対象と
してウエーハ18を説明してきたが、電子ビーム
描画によるマスク基板の洗浄に際しても当然に適
用される。 Further, as a means for uniformly dissolving carbon dioxide gas in ultrapure water, a well-known vortex or turbulent flow generating mechanism may be used instead of the filter 13. Although the wafer 18 has been described as an object to be cleaned, the present invention is naturally applied to cleaning a mask substrate by electron beam writing.
要するに、本発明はウエーハ面上などに供給さ
れる超純水流路11に、電磁弁3にて流量制御さ
れる炭酸ガスを直接吹き込み、この吹き込まれた
気泡をフイルター13を微細化して超純水に溶解
し、フイルター13の出口に配した比抵抗値セン
サー14に基づく上記電磁弁制御により、ウエー
ハ面上に静電気による放電破壊が生じないよう
に、炭酸ガスの吹き込み量を定量的に制御するた
め、ウエーハ18面を静電気による放電破壊を招
くことなく洗浄できる。 In short, the present invention directly blows carbon dioxide whose flow rate is controlled by the solenoid valve 3 into the ultrapure water channel 11 that is supplied onto the wafer surface, and filters the bubbles into ultrapure water by making the filter 13 fine. In order to quantitatively control the amount of carbon dioxide gas blown into the wafer surface by controlling the electromagnetic valve based on the resistivity sensor 14 disposed at the outlet of the filter 13 so as not to cause discharge damage due to static electricity on the wafer surface. , the surface of the wafer 18 can be cleaned without causing damage due to static electricity.
図面は本発明実施の一例を示すもので、第1図
は炭酸ガスを超純水に吹きこむブロツク回路の説
明図、第2図は縦軸が超純水の比抵抗値を示す実
測結果のグラフ図である。
1……ボンベ、3……電磁弁、4……比抵抗調
節器、10……ガス流路,11……超純水流路、
13……フイルター、14……比抵抗値センサ。
The drawings show an example of the implementation of the present invention. Fig. 1 is an explanatory diagram of a block circuit for blowing carbon dioxide gas into ultrapure water, and Fig. 2 shows actual measurement results in which the vertical axis indicates the specific resistance value of ultrapure water. It is a graph diagram. 1... Cylinder, 3... Solenoid valve, 4... Specific resistance regulator, 10... Gas flow path, 11... Ultrapure water flow path,
13... Filter, 14... Specific resistance value sensor.
Claims (1)
1に、電磁弁にて流量制御される炭酸ガスを直接
吹き込み、この吹き込まれた気泡をフイルターで
微細化して超純水に溶解し、フイルターの出口に
配した比抵抗値センサーに基づく上記電磁弁制御
により、ウエーハ面上に静電気による放電破壊が
生じないように、炭酸ガスの吹き込み量を定量的
に制御する、ウエーハの洗浄などに使用する比抵
抗の低い超純水の製法。 2 主流路の超純水に直接炭酸ガスを吹き込む炭
酸ガス供給源と、この吹き込み量を調整する電磁
弁と、主流路の超純水に吹き込まれた気泡状の炭
酸ガスを微細化するフイルターと、このフイルタ
ーの出口側に比抵抗値センサーとを配し、ウエー
ハ面上などに噴射される超純水が一定範囲の比抵
抗値を有するように比抵抗値センサーで上記電磁
弁を開閉する、ウエーハの洗浄などに使用する比
抵抗の低い超純水製造装置。[Claims] 1. Ultrapure water channel 1 supplied onto the wafer surface, etc.
1. Carbon dioxide gas whose flow rate is controlled by a solenoid valve is directly blown in, and the blown bubbles are atomized by a filter and dissolved in ultrapure water, and the above-mentioned solenoid valve is based on a resistivity value sensor placed at the outlet of the filter. A method for producing ultrapure water with low resistivity for use in cleaning wafers, etc., which quantitatively controls the amount of carbon dioxide gas blown into the wafer surface to prevent electrostatic discharge damage from occurring on the wafer surface. 2. A carbon dioxide supply source that blows carbon dioxide directly into the ultrapure water in the main flow path, a solenoid valve that adjusts the amount of this blowing, and a filter that atomizes the carbon dioxide gas bubbles blown into the ultrapure water in the main flow path. A resistivity value sensor is placed on the outlet side of the filter, and the electromagnetic valve is opened and closed by the resistivity value sensor so that the ultrapure water sprayed onto the wafer surface has a resistivity value within a certain range. Ultrapure water production equipment with low resistivity used for cleaning wafers, etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9448783A JPS60876A (en) | 1983-05-27 | 1983-05-27 | Method and device for producing ultra-pure water having low specific resistance used for washing of wafer, or the like |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9448783A JPS60876A (en) | 1983-05-27 | 1983-05-27 | Method and device for producing ultra-pure water having low specific resistance used for washing of wafer, or the like |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60876A JPS60876A (en) | 1985-01-05 |
| JPH0373355B2 true JPH0373355B2 (en) | 1991-11-21 |
Family
ID=14111644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9448783A Granted JPS60876A (en) | 1983-05-27 | 1983-05-27 | Method and device for producing ultra-pure water having low specific resistance used for washing of wafer, or the like |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60876A (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62188186A (en) * | 1986-02-14 | 1987-08-17 | 日産自動車株式会社 | Double-locking mechanism of composite connector |
| JPS62226632A (en) * | 1986-03-28 | 1987-10-05 | Taiyo Sanso Kk | Method of introducing lattice defect for gettering of impurity atom into back surface of semiconductor wafer |
| JPS62226629A (en) * | 1986-03-28 | 1987-10-05 | Taiyo Sanso Kk | Rinsing method for semiconductor wafer |
| JPS6386526A (en) * | 1986-09-30 | 1988-04-16 | Taiyo Sanso Kk | Method for introducing lattice defect for gettering of impurity atom into rear of semiconductor wafer |
| US4954085A (en) * | 1987-07-24 | 1990-09-04 | Honda Giken Kogyo Kabushiki Kaisha | Wiring structure |
| JPH02102529A (en) * | 1988-10-12 | 1990-04-16 | Matsushita Electron Corp | Mask cleaning process |
| US5175124A (en) * | 1991-03-25 | 1992-12-29 | Motorola, Inc. | Process for fabricating a semiconductor device using re-ionized rinse water |
| JP3102721B2 (en) * | 1993-03-23 | 2000-10-23 | キヤノン株式会社 | Manufacturing method of electrophotographic photoreceptor |
| JP2662925B2 (en) | 1993-04-09 | 1997-10-15 | 株式会社フロンテック | Method and apparatus for removing static electricity from high resistivity liquid |
| JP3563789B2 (en) | 1993-12-22 | 2004-09-08 | キヤノン株式会社 | Method for producing electrophotographic photoreceptor and jig used in the method |
| JPH0880393A (en) * | 1994-09-14 | 1996-03-26 | Juki Corp | 2-needle sewing machine |
| JPH07312358A (en) * | 1995-01-31 | 1995-11-28 | Sony Corp | Cleaning equipment |
| KR100527677B1 (en) * | 1998-07-15 | 2006-02-01 | 삼성전자주식회사 | Wet Station |
| US8448925B2 (en) | 2006-10-17 | 2013-05-28 | Mks Instruments, Inc. | Devices, systems, and methods for carbonation of deionized water |
| EP2104648B1 (en) * | 2006-10-17 | 2013-04-17 | MKS Instruments, Inc. | System and method for carbonation of deionized water |
| JP2017204495A (en) * | 2016-05-09 | 2017-11-16 | 株式会社荏原製作所 | Substrate cleaning device |
| KR102338647B1 (en) | 2016-05-09 | 2021-12-13 | 가부시키가이샤 에바라 세이사꾸쇼 | Substrate cleaning apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59166285A (en) * | 1983-03-14 | 1984-09-19 | Kurita Water Ind Ltd | Ultrapure water resistivity control device |
-
1983
- 1983-05-27 JP JP9448783A patent/JPS60876A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60876A (en) | 1985-01-05 |
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