JPH0376239B2 - - Google Patents
Info
- Publication number
- JPH0376239B2 JPH0376239B2 JP58101689A JP10168983A JPH0376239B2 JP H0376239 B2 JPH0376239 B2 JP H0376239B2 JP 58101689 A JP58101689 A JP 58101689A JP 10168983 A JP10168983 A JP 10168983A JP H0376239 B2 JPH0376239 B2 JP H0376239B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording medium
- optical recording
- recording
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2572—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24304—Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/2432—Oxygen
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
本発明は、レーザ光等のエネルギー線を照射す
ることによつて、記録層のエネルギー線照射部が
溶融等により変形または除去されることによつて
生じる反射率もしくは透過率の変化を利用して光
学的に情報の記録、再生を行うのに適した記録媒
体に関するものである。
光デイスク等の光記録媒体に要求される性質と
しては、記録光源に用いるレーザの波長領域での
記録感度が高いこと、再生信号のSN比が高いこ
と、記録密度が高いこと、保存安定性にすぐれて
いること、及び毒性が低いことが挙げられる。
レーザ光照射部の温度上昇により記録層が融解
し、ピツトを形成するいわゆるヒートモード型記
録媒体に於て、記録感度を高くするためには、記
録層の分光吸収率が高いこと、融点、比熱および
熱伝導率が低いことが必要で、また記録層の厚さ
は薄いことが望ましい。再生信号のSN比を高く
するためには、ピツトの形状、大きさが揃つてい
て、ピツト周辺に乱れが無いこと、及び再生に反
射光を使用する場合には、記録部と未記録部との
反射率の差が大きいこと、また記録密度を高くす
るためには、熱伝導率が低いことが要求される。
また保存安定性にすぐれた記録媒体を得るために
は、記録層の酸化安定性及び耐湿性が高いことが
要求される。
レーザ用記録媒体として現在最もすぐれている
とされているのは、ガラスまたはプラスチツク基
板上に記録層としてテルルまたはテルル−砒素合
金等のテルル合金薄膜を形成したものである。テ
ルル及びテルル合金薄膜は、可視−近赤外の波長
領域で光の吸収率が高く、低熱伝導率、低融点で
あるため記録感度が高く、またピツトの形状、大
きさも揃い易く、且つ可視−近赤外の波長領域で
適当な反射率を有しているため、反射光によつて
SN比の高い再生信号が得られるなど、ヒートモ
ード型レーザ記録媒体に適した性質を持つてい
る。しかしテルル薄膜及びテルル−砒素合金薄膜
には、酸化安定性が低いこと及び毒性が高い等の
欠点がある。酸化安定性の改良にはテルルまたは
テルル−砒素合金にセレンを添加したり、テルル
低酸化物を用いる等の方法が試みられているが、
現在まで充分なものは得られておらず、また毒性
に関しては効果的な対策は見出されていない。
毒性の点では、テルル系記録媒体に比較して有
利なものに、ガラスまたはプラスチツク基板上、
もしくは該基板上に設けたアルミニウム等の反射
層の上に色素または色素をポリマーに分散した層
を形成した記録媒体がある。しかし、一般に色素
の吸収波長は、赤色光より短波長側にあり、今後
記録用光源の主流となると予想されている半導体
レーザの発振波長域である750nm〜850nmの領域
で大きな吸収を示す安定な色素が得られないた
め、半導体レーザを記録用光源とする色素系記録
媒体で実用的なものは得られていない。
本発明者等は、毒性が低く、酸化安定性及び耐
水性にすぐれた光記録媒体の完成を目的として鋭
意研究を進めた結果、基板上にコーテイングされ
たポリメチルメタクリレート等の有機高分子量物
量に紫外線等のエネルギー線を照射し、この紫外
線照射面上に、金属もしくは半導体の微粒子が金
属酸化物薄膜中に分散した複合層からなる記録
層、または金属もしくは半導体の薄膜と金属酸化
物の薄膜が交互に積層された記録層を形成するこ
とによつて高感度でSN比が極めて高く、且つ安
定でしかも毒性の低い光記録媒体が得られること
を見出し、本発明に到達した。
本発明の要旨とするところは、エネルギー線が
照射された有機高分子量物層のエネルギー線照射
面上に金属もしくは半導体と金属酸化物からなる
記録層が設けられていることを特徴とする光記録
媒体の機構と構成にある。
第1図に、本発明の光記録媒体の層構成の一例
を示す。第1図に於ては、基板3上に形成された
有機高分子量物層2の紫外線等のエネルギー線照
射面4上に金属もしくは半導体と金属酸化物から
なる記録層1が設けられている。この光記録媒体
に於ては、基板側もしくは基板と反対側から入射
したレーザ光等のエネルギー線は記録層に吸収さ
れ、発生した熱により記録層が融解もしくは流動
化し、ピツトを形成することによつて生じる媒体
のエネルギー線が照射された記録層部分とエネル
ギー線が照射されない記録層部分の光の反射率、
透過率等の光学的性質の変化を利用して記録再生
が行われる。
本発明の光記録媒体に用いられる有機高分子量
物は、紫外線等のエネルギー線の照射により容易
に主鎖の一部が切断され、平均分子量が低下する
性質を有するもので、具体例としてはポリメチル
メタクリレート、メチルメタクリレート及びこれ
と共重合可能なビニル単量体との共重合物、ポリ
スチレン、スチレン及びこれと共重合可能なビニ
ル単量体との共重合物、ポリアクリロニトリル、
アクリロニトリル及びこれと共重合可能なビニル
単量体との共重合物が挙げられる。特に、メチル
メタクリレート系重合体またはスチレン系重合体
を用いた場合に、高感度でSN比の高い光記録媒
体が得られる。ここでメチルメタクリレートに共
重合可能なビニル単量体の例としては、メチルア
クリレート、エチルアクリレート、ブチルアクリ
レート等のアクリル酸アルキルエステル類、エチ
ルメタクリレート、プロピルメタクリレート、シ
クロヘキシルメタクリレート、ベンジルメタクリ
レート等のメタクリル酸アルキルエステル類、ス
チレン、α−メチルスチレン、p−クロルスチレ
ン等の芳香族ビニル系単量体、アクリロニトリ
ル、メタアクリロニトリル等の不飽和ニトリル系
単量体、フマール酸ジメチル、フマール酸ジブチ
ル、マレイン酸ジメチル、マレイン酸ジブチル等
の不飽和ジカルボン酸のジアルキルエステル類、
酢酸ビニル、プロピオン酸ビニル等のビニルエス
テル類、ビニルメチルエーテル、ビニルエチルエ
ーテル等のビニルエーテル類、塩化ビニル、塩化
ビニリデン等の含塩素ビニル単量体等が挙げられ
る。またスチレン等と共重合可能なビニル単量体
の例としては、メチルメタクリレート、エチルメ
タクリレート、プロピルメタクリレート、シクロ
ヘキシルメタクリレート、ベンジルメタクリレー
ト、メチルアクリレート、エチルアクリレート等
のメタクリル酸またはアクリル酸のアルキルエス
テル類、アクリロニトリル、メタアクリロニトリ
ル等の不飽和ニトリル系単量体、α−メチルスチ
レン、m−メチルスチレン、p−メチルスチレ
ン、o−クロルスチレン、m−クロルスチレン、
p−クロルスチレン等の芳香族ビニル単量体、無
水マレイン酸等の不飽和カルボン酸等が挙げられ
る。
有機高分子量物層の厚さは500Å以上であるこ
とが必要である。有機高分子量物層の厚さが500
Å以下であると、感度及びSN比の高い光記録媒
体が得られない。本発明の光記録媒体の有機高分
子量物層に照射するエネルギー線の例としては、
紫外線、電子線、X線等が挙げられるが、特に波
長190〜420nmの紫外線を10mJ/cm2以上照射した
場合に感度、SN比のすぐれた光記録媒体が得ら
れる。
本発明の光記録媒体に於ける記録層に用いられ
る金属もしくは半導体の例としては、Sn、In、
Ge、Sb、Pb、Al、Zn、Cu、Ag、Au、Bi、Se、
Te及びこれらを主成分とする合金が挙げられる
が、低毒性の観点から好ましい金属もしくは半導
体の例としては、Sn、In、Ge、Sb、Pb、Al、
Zn、Cu、Ag、Au及びこれらを主成分とする合
金が挙げられる。上記金属もしくは半導体の特徴
は、半導体レーザの発振波長域での反射率が高
い、融点が低い、毒性が低い、及び空気中での安
定性が高い等であるので、これら金属もしくは半
導体を主成分とする合金を用いる場合は、上記特
徴が失われないように注意する必要がある。
本発明の光記録媒体に於ける記録層に用いられ
る金属酸化物は、化学的安定性にすぐれ、熱伝導
率の低いものであることが必要で、好ましい例と
しては、Sn、In、Al、Zr及びZnの酸化物が挙げ
られるが特にSnまたはInの酸化物を用いると空
気中での安定性がすぐれ、高感度且つ再生信号の
SN比が高い記録媒体が得られる。SnまたはInの
酸化物の例としては化学式でSnO2、InO3及び
SnO2-x、In2O3-x等の低酸化物や、Sn1-yMyO2、
In2-ZNZO3等のSnO2、In2O3に異種金属がドーピ
ングされたものが挙げられる。ここでx,zは
0.5以下、yは0.25以下の正の数、MはSb、In、
NはSn、Ge、Pb、Zn等の金属を示す。
本発明の光記録媒体に於ける記録層は、上記金
属もしくは半導体の微粒子が上記金属酸化物薄膜
中に分散した複合層または、上記金属もしくは半
導体の薄膜と上記金属酸化物薄膜との積層膜から
構成されるが、特に記録層に上記金属もしくは半
導体の微粒子が上記金属酸化物薄膜中に分散した
複合層を用いた場合、高感度でSN比の高い光記
録媒体が得られる。該複合層に於ける金属もしく
は半導体微粒子の充填率は0.3以上、0.95以下で
あることが望ましい。充填率が0.3以下であると、
複合層のレーザ光等のエネルギー線の吸収係数が
低下し、且つ複合層が溶融流動化する温度も高く
なり、得られる光記録媒体の記録感度が低下する
傾向が見られる。充填率が0.95以上となると、複
合層中に分散している金属もしくは半導体粒子間
の接触が始まり、金属もしくは半導体の粒子径が
大きくなり、そのため記録ピツトの大きさ、形状
が不揃いになり、SN比が低下する傾向が見られ、
また複合層の熱伝導率も大きくなるため、記録感
度が低下する傾向がある。本発明の光記録媒体に
於て、記録層に上記の金属もしくは半導体の微粒
子が金属酸化物中に分散した複合層を用いる場合
は、感度及び記録部と末記録部のコントラストを
高くする目的で金属、半導体及び酸化物の種類が
異なる複合層同士や、上記複合層と前記金属もし
くは半導体の薄膜を積層して記録層を形成させる
こともできる。
本発明の光記録媒体に於ては、記録層の厚さが
50Å以上、2000Å以上であることが望ましい。記
録層の厚さが2000Å以上になると記録層のエネル
ギー線照射部の体積が大きくなるため、エネルギ
ー線を照射した場合に吸収されるエネルギーの密
度が低下するため、記録媒体の記録感度が低下
し、さらに形成されるピツト周辺の形状が乱れ易
くなり、SN比を高くすることが難しい。記録層
の厚さが50Å以下であると記録媒体の記録部と末
記録部の反射率または透過率の差が小さくなり、
コントラストが低くなるため、SN比を高くする
ことが難しい。本発明の光記録媒体を反射型光デ
イスクに使用する場合、記録層のより好ましい厚
さの範囲は100Å以上、1000Å以下である。
本発明の光記録媒体の一つの実施態様は、基板
上に有機高分子量物層を設け、この有機高分子量
物層に紫外線等のエネルギー線を照射した後、こ
の有機高分子量物層のエネルギー線照射側表面に
記録層を形成したものである。基板としてはアル
ミニウム等の金属板、ガラス板、あるいはメチル
メタクリレート系重合体、スチレン系重合体、ポ
リ塩化ビニル、ポリカーボネート、ポリエチレン
テレフタレート、ポリブチレンテレフタレート、
ポリアミド及びエポキシ樹脂、ジアリルフタレー
ト重合体、ジエチレングリコールビスアリルカー
ボネート重合体、ポリフエニレンサルフアイド、
ポリフエニレンオキサイド、ポリイミド等の熱可
塑性、又は熱硬化性樹脂のシート又はフイルムが
用いられる。特に基板にポリメチルメタクリレー
ト、メチルメタクリレート及びこれと共重合可能
なビニル単量体との共重合物、ポリスチレン、ま
たはスチレン及びこれと共重合可能なビニル単量
体との共重合物等の有機高分子量物を用いた場合
は、この基板の表面に紫外線等のエネルギー線を
照射した後、基板のエネルギー線を照射した面上
に記録層を形成させることにより、他に有機高分
子量物層を用いることなく、第2図に示す構造の
本発明の光記録媒体が得られる。さらに基板に上
記の如く有機高分子量物を用いる場合は、鋳型ま
たはスタンパを用いてキヤスト重合、圧縮成形ま
たは射出成形を行うことにより、表面にプリグル
ープを有する基板を製作し、ついで基板のこのプ
リグループが形成されている面上に紫外線等のエ
ネルギー線を照射後、この照射面上に記録層を形
成させることにより、本発明の光記録媒体が得ら
れる。
本発明の光記録媒体を記録光、再生光が基板を
通して入射する形式の光デイスクとして使用する
場合に於ては、基板にはガラス板、又はメチルメ
タクリレート系重合体、スチレン系重合体、ポリ
塩化ビニル、ジエチレングリコールビスアリルカ
ーボネート重合体、エポキシ樹脂等の透明プラス
チツクのシートを用いる必要がある。
以下に本発明の記録媒体の製造方法を層構成の
例図を用いて説明する。
第1図の構成の記録媒体は基板3の上に有機高
分子量物層2をコートした後、図の上方から紫外
線等のエネルギー線を照射し、このエネルギー線
を照射した面4上に記録層1を形成させることに
よつて得られる。基板3に有機高分子量物層2を
コートするためには、有機高分子量物を溶剤に溶
解するか、エマルジヨン化したものをスピンコー
ト、ロールコートまたは浸漬塗布等の方法を用い
るか、物理蒸着、プラズマ重合等の方法を用い
る。有機高分子量物層2をコーテイングした後、
この層にエネルギー線を照射する。具体的な例と
しては、エネルギー線源にクセノン−水銀灯、ク
セノン灯、高圧水銀灯、超高圧水銀灯等を用い、
波長190〜420nmの紫外線を10mJ/cm2以上照射す
る。紫外線強度は有機高分子量物層物層表面で
10mw/cm2以上であることが望ましい。上記の如
くエネルギー線として紫外線を使用する場合は、
特に線源に300nm以下の波長で分光出力の大きい
クセノン−水銀灯、高圧水銀灯等を用いると記録
感度、SN比のすぐれた光記録媒体が得られる。
また一般に光重合開始剤及び感光剤と呼ばれてい
る物質を有機高分子量物層に添加すると、300nm
以下の波長で分光出力の小さい線源を使用した場
合でも記録感度、SN比のすぐれた光記録媒体を
得ることができる。上記光重合開始剤及び感光剤
の例としては、ベンゾインイソブチルエーテル、
ベンゾインイソプロピルエーテル等のベンゾイン
アルキルエーテル類、2,2−ジメトキシ−2、
フエニルアセトフエノン等のベンジルケタール
類、ジエトキシアセトフエノン等のアセトフエノ
ン誘導体、ベンゾフエノン、ベンジル、メチル−
o−ベンゾインベンゾエート等のケトン類等が挙
げられる。
紫外線の照射量は10mJ/cm2以上であれば良く、
特に上限はないが、基板にポリメチルメタクリレ
ート等の有機高分子量物を用いて第2図に示す構
造の光記録媒体を製造する場合は、紫外線の照射
によつて基板の機械的強度の低下や熱による変形
が生じないように注意する必要がある。この場
合、特に線源にクセノン−水銀灯、高圧水銀灯を
用いて、照射量を適切に選択することにより、基
板の機械的強度の低下や変形を併うことなく、高
感度でSN比の高い記録媒体が得られる。
本発明の光記録媒体は上記の如く基板上に設け
た有機高分子量物層にエネルギー線を照射後、こ
のエネルギー線照射面上に記録層を形成させるこ
とによつて得られる。記録層を形成させるために
は真空蒸着法、イオン化蒸着法、イオンプレーテ
イング法、クラスターイオンビーム蒸着法、スパ
ツタ法等を利用する。記録層として金属もしくは
半導体の微粒子が金属酸化物中に分散した複合層
を用いる場合は、金属もしくは半導体と金属酸化
物とを別々のルツボに入れ、1×10-3mmHg以下
の真空度に於て同時に蒸発させ蒸着を行う。また
イオン化と同時に基板側に直流電圧を印加してイ
オン化粒子を加速させるイオンプレーテイング法
を用いることもできる。また金属もしくは畔導体
のターゲツトと金属酸化物のターゲツトを用いて
同時スパツタを行うことによつて複合層を形成さ
せることもできる。
いずれの場合も複合層の形成時には、金属もし
くは半導体及び金属酸化物の蒸着速度、スパツタ
リング速度を別々に制御することにより、所定の
金属もしくは半導体の充填率及び厚さの複合層が
得られる。金属もしくは半導体の薄膜と金属酸化
物の薄膜が交互に積層された記録層を用いる場合
は、複合層を形成させる場合と同様の手段を用
い、金属もしくは半導体と金属酸化物を交互に蒸
着もしくはスパツタすることにより記録層を形成
させる。
本発明の光記録媒体に於ける記録層は、通常の
環境下では極めて安定であり、特に保護層を設け
る必要はないが、機械的衝撃等に対する保護や、
塵埃等の付着により記録再生に支障が生じるのを
防ぐことを目的として保護層を記録層の上に設け
ることが可能である。保護層としては、SiO2、
Al2O3、TiO2等の無機材料及び有機高分子材料が
用いられる。
第1図及び第2図に示す本発明の光記録媒体に
於ては、有機高分子量物層2及び基板3を透明な
ものとした場合は、記録光及び再生光を図の上方
から入射させても下方から入射させても良い。
本発明の光記録媒体は低毒性で高感度であり、
空気中での安定性がすぐれているのと同時にSN
比が極めて高い点に特徴がある。本発明の光記録
媒体が上記の如くすぐれた特徴を示す理由は現時
点では必ずしも明確でないが、以下の様に推定す
るのができる。
本発明の光記録媒体に於ける有機高分子量物層
は、紫外線等のエネルギー線の照射を受けること
により、特にエネルギー線が照射を受けた面近傍
に於ては主鎖が切断され、分子量が低下するため
表面エネルギーが低くなる。一方記録ピツトの形
成は、レーザ光等のエネルギー線の照射により融
解もしくは流動化した記録層の移動によつて行わ
れるが、本発明の光記録媒体に於ては、上記の如
く記録層に接触する有機高分子量物層の表面エネ
ルギーが低いため、これと融解もしくは流動化し
た記録層との表面エネルギーの差が大きくなり、
融解もしくは流動化した記録層の移動がスムーズ
に起るものと考えられる。
或いは、レーザ光により記録層を照射したと
き、レーザ光のエネルギーが有機高分子量物層の
エネルギー線照射により低分子量化された部分を
融解する場合には、レーザ光照射によつて融解も
しくは流動化した記録層とともに移動し、ピツト
を形成しやすい状態になることも考えられる。こ
の結果、低い照射エネルギーで形状、大きさの揃
つたピツトが形成されるため、高感度でSN比の
高い光記録媒体が得られる。また本発明の光記録
媒体の記録層に使用される金属もしくは半導体及
び金属酸化物等は、いずれも空気中及び水中で安
定で且つ毒性も低いため本発明の光記録媒体は、
記録再生用光デイスクとして画像フアイル、文書
フアイル、データフアイル及びコンピユータの外
部メモリとして用いられるばかりでなく、レーザ
光で直接記録再生が可能なテープ、カード、マイ
クロフイツシユ等として用いることができる。
以下本発明の詳細を実施例を用いて示すが、本
発明はこれ等の例に限定されるものではない。
実施例 1
厚さ1.2mm、外径300mm、内径35mmのガラスのデ
イスク状の基板上にスピンナーを用いてポリメチ
ルメタクリレート(三菱レイヨン製アクリコン)
のメチルエチルケトン溶液を塗布し、乾燥を行い
厚さ3μmのポリメチルメタクリレート層を形成し
た。得られたポリメチルメタクリレート層を有す
る基板をランプ出力80W/cmの高圧水銀灯を有す
る集光型照射装置で450nm以下の波長に光強度
30mW/cm2の領域をベルトコンベアを用いて通過
させることにより、ポリメチルメタクリレート層
に120mJ/cm2のエネルギーの紫外線を照射した。
上記の如くして得られた紫外線照射を受けたポ
リメチルメタクリレート層を有するガラス基板を
真空蒸着装置のチヤンバーに取り付け、蒸着装置
の二つのルツボにそれぞれSn(フルウチ化学製、
20φ×10mmt、純度99.99%)及びSnO2(フルウチ
化学製、18φ×5mmt、純度99.99%)を入れ、基
板を20rpmの速度で回転させながら、真空度2×
10-6mHgに於て、Sn及びSnO2にそれぞれ別の電
子銃より電子線を照射し、Sn及びSnO2の蒸発速
度を調節しながら蒸着を行い、ポリメチルメタク
リレート層の紫外線照射面上に厚さ270ÅでSnの
充填率が0.8のSn微粒子がSnO2に分散した複合層
からなる記録層を有する第1図に示す構成の光記
録媒体を製作した。
得られたデイスク状光記録媒体を毎分1800回転
速度で回転させながら、くりかえし周波数5MHz
で100nsecのパルス巾に変調した半導体レーザ
(日立製作所製HLP−1600、発振波長830nm)の
発振光をコリメーターレンズ、集光レンズ及び基
板を通して記録層にビーム径1μmまで集光して照
射することにより記録を行つたところ、短径がほ
ぼ1μmのピツトを形成させるのに必要なデイスク
の記録面上に於けるレーザ光強度は6mWであつ
た。また記録された信号を記録に用いたのと同様
の半導体レーザを用いレーザ光強度1mWで再生
を行い、基準信号5MHz、バンド巾30KHzの条件
でスペクトラムアナライザで測定したCN比は
52dBであつた。
比較例 1
実施例1に用いたのと同様のガラスのデイスク
状基板を真空蒸着装置のチヤンバーに取り付け、
基板回転速度20rpm、真空度2×10-6mmHgに於
て電子ビーム蒸着法を用い、実施例1と同様に
Sn及びSnO2を各々蒸着速度を調節しながらガラ
ス基板の表面上に共蒸着を行い、厚さ260ÅでSn
の充填率が0.8のSnがSnO2中に分散した複合層を
ガラス基板上に形成させた試料を製作した。
得られたデイスク状試料について、実施例1と
同様の方法で、くりかえし周波数5MHzで100n
secのパルス巾に変調した半導体レーザ光で記録
することを試みたがデイスクの記録面上でのレー
ザ光強度12mWでもピツトを形成させることがで
きなつた。
以上に示す如く、ガラス基板上にSn微粒子が
SnO2中に分散した複合層を直接形成させた試料
は本発明の光記録媒体に比較すると感度が著しく
低いことが明らかである。
比較例 2
実施例1に用いたのと同様のガラスのデイスク
状基板上に、実施例1と同様の方法で厚さ3μmの
ポリメチルメタクリレート層を設け、得られたポ
リメチルメタクリレート層を有する基板を真空蒸
着装置のチヤンバーに取り付け、実施例1と同様
の条件でSnとSnO2を共蒸着し、ポリメチルメタ
クリレート層上に厚さ270Åで、Snの充填率が0.8
のSnの微粒子がSnO2中に分散した複合層が形成
された試料を製作した。
得られたデイスク状の試料について実施例1と
同様の方法で、くりかえし周波数5MHzで100nsec
のパルス巾に変調した半導体レーザ光で記録を行
つたところ、短径がほぼ1μmのピツトを形成させ
るのに必要なデイスクの記録面上に於けるレーザ
光強度は12mW、また実施例1と同様に基準信号
5MHz、バンド巾30KHzの条件でスペクトラムア
ライザで測定したCN比は41dBであつた。
以上に示す如く、ガラ基板上に設けられたポリ
メチルメタクリレート層上に紫外線等のエネルギ
ー線を照射することなく、直接記録層を形成する
ことにより得られた試料は、本発明の光記録媒体
に比較して記録感度が低く、またCN比も低くな
る。
実施例 2
実施例1で用いたのと同様のデイスク状ガラス
基板に、実施例1と同様の方法を用いて、表1に
示す厚さ3μmの有機高分子量物層を形成させ、次
いでこの有機高分子量物層に実施例1と同様の方
法を用いて、120mJ/cm2のエネルギーの紫外線を
照射した。
上記の如くして得られた紫外線照射を受けた有
機高分子量物層上に実施例1と同様の方法を用い
て、表1に示す金属の微粒子が同じく表1に示す
金属酸化物中に分散し、金属充填率0.85、厚さ
280Åの複合層である記録層が形成された光記録
媒体を製作した。
得られたデイスク状光記録媒体について実施例
1と同様の条件で記録再生を行つた場合、短径が
ほぼ1μmのピツトを形成させるのに必要なデイス
クの記録面上に於けるレーザ光強度、CN比を表
1に示す。
The present invention utilizes changes in reflectance or transmittance that occur when the energy ray irradiated portion of the recording layer is deformed or removed by melting or the like by irradiating energy rays such as laser light. The present invention relates to a recording medium suitable for optically recording and reproducing information. The properties required of optical recording media such as optical disks include high recording sensitivity in the wavelength range of the laser used as the recording light source, high signal-to-noise ratio of the reproduced signal, high recording density, and storage stability. It has excellent properties and low toxicity. In so-called heat mode recording media, in which the recording layer melts and forms pits due to the temperature rise of the laser beam irradiation area, in order to increase the recording sensitivity, the recording layer must have a high spectral absorption rate, melting point, specific heat It is also necessary that the recording layer has low thermal conductivity, and it is desirable that the recording layer be thin. In order to increase the signal-to-noise ratio of the reproduced signal, it is necessary to make sure that the pits have the same shape and size, and that there is no disturbance around the pits.If reflected light is used for reproduction, it is necessary to In addition, in order to increase the recording density, the thermal conductivity is required to be low.
Furthermore, in order to obtain a recording medium with excellent storage stability, the recording layer is required to have high oxidation stability and moisture resistance. The best recording medium for lasers at present is one in which a thin film of tellurium or a tellurium alloy such as a tellurium-arsenic alloy is formed as a recording layer on a glass or plastic substrate. Tellurium and tellurium alloy thin films have high light absorption in the visible to near-infrared wavelength region, low thermal conductivity, and low melting point, so they have high recording sensitivity, and the shape and size of the pits are easy to match, and the visible to near infrared wavelength range is high. It has an appropriate reflectance in the near-infrared wavelength region, so it can be easily detected by reflected light.
It has properties suitable for heat mode laser recording media, such as the ability to obtain reproduced signals with a high signal-to-noise ratio. However, tellurium thin films and tellurium-arsenic alloy thin films have drawbacks such as low oxidation stability and high toxicity. Attempts have been made to improve oxidation stability by adding selenium to tellurium or tellurium-arsenic alloys, or by using low tellurium oxides.
To date, sufficient quantities have not been obtained, and no effective measures have been found regarding toxicity. Advantages compared to tellurium-based recording media in terms of toxicity include glass or plastic substrates;
Alternatively, there is a recording medium in which a dye or a layer in which a dye is dispersed in a polymer is formed on a reflective layer made of aluminum or the like provided on the substrate. However, the absorption wavelength of dyes is generally on the shorter wavelength side than red light, and dyes are stable dyes that exhibit large absorption in the 750 nm to 850 nm oscillation wavelength region, which is the oscillation wavelength range of semiconductor lasers, which are expected to become the mainstream of recording light sources in the future. Since a dye cannot be obtained, a practical dye-based recording medium using a semiconductor laser as a recording light source has not been obtained. The inventors of the present invention have carried out intensive research with the aim of completing an optical recording medium with low toxicity, excellent oxidation stability, and water resistance. Energy rays such as ultraviolet rays are irradiated, and a recording layer consisting of a composite layer in which metal or semiconductor fine particles are dispersed in a metal oxide thin film, or a metal or semiconductor thin film and a metal oxide thin film is formed on the ultraviolet irradiated surface. The inventors have discovered that by forming alternately laminated recording layers, it is possible to obtain an optical recording medium that is highly sensitive, has an extremely high signal-to-noise ratio, is stable, and has low toxicity, and has thus arrived at the present invention. The gist of the present invention is an optical recording device characterized in that a recording layer made of a metal or a semiconductor and a metal oxide is provided on the energy ray irradiated surface of an organic polymer layer irradiated with energy rays. It lies in the mechanism and composition of the medium. FIG. 1 shows an example of the layer structure of the optical recording medium of the present invention. In FIG. 1, a recording layer 1 made of a metal or a semiconductor and a metal oxide is provided on a surface 4 of an organic polymer layer 2 formed on a substrate 3 and irradiated with energy rays such as ultraviolet rays. In this optical recording medium, energy rays such as laser beams incident from the substrate side or the opposite side to the substrate are absorbed by the recording layer, and the generated heat melts or fluidizes the recording layer, forming pits. The resulting light reflectance of the recording layer portion of the medium that is irradiated with energy rays and the recording layer portion that is not irradiated with energy rays,
Recording and reproduction are performed using changes in optical properties such as transmittance. The organic high molecular weight material used in the optical recording medium of the present invention has a property that a part of the main chain is easily cut off by irradiation with energy rays such as ultraviolet rays, and the average molecular weight decreases. Methyl methacrylate, a copolymer of methyl methacrylate and a vinyl monomer copolymerizable with it, polystyrene, a copolymer of styrene and a vinyl monomer copolymerizable with it, polyacrylonitrile,
Examples include acrylonitrile and copolymers of vinyl monomers copolymerizable with acrylonitrile. In particular, when a methyl methacrylate polymer or a styrene polymer is used, an optical recording medium with high sensitivity and a high signal-to-noise ratio can be obtained. Examples of vinyl monomers that can be copolymerized with methyl methacrylate include acrylic acid alkyl esters such as methyl acrylate, ethyl acrylate, and butyl acrylate, and methacrylic acid alkyl esters such as ethyl methacrylate, propyl methacrylate, cyclohexyl methacrylate, and benzyl methacrylate. Esters, aromatic vinyl monomers such as styrene, α-methylstyrene and p-chlorostyrene, unsaturated nitrile monomers such as acrylonitrile and methacrylonitrile, dimethyl fumarate, dibutyl fumarate, dimethyl maleate, Dialkyl esters of unsaturated dicarboxylic acids such as dibutyl maleate,
Examples include vinyl esters such as vinyl acetate and vinyl propionate, vinyl ethers such as vinyl methyl ether and vinyl ethyl ether, and chlorine-containing vinyl monomers such as vinyl chloride and vinylidene chloride. Examples of vinyl monomers that can be copolymerized with styrene include alkyl esters of methacrylic acid or acrylic acid such as methyl methacrylate, ethyl methacrylate, propyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, methyl acrylate, and ethyl acrylate, and acrylonitrile. , unsaturated nitrile monomers such as methacrylonitrile, α-methylstyrene, m-methylstyrene, p-methylstyrene, o-chlorostyrene, m-chlorostyrene,
Examples include aromatic vinyl monomers such as p-chlorostyrene, unsaturated carboxylic acids such as maleic anhydride, and the like. The thickness of the organic polymer layer needs to be 500 Å or more. The thickness of the organic polymer layer is 500
If it is less than Å, an optical recording medium with high sensitivity and high signal-to-noise ratio cannot be obtained. Examples of energy rays irradiated to the organic polymer layer of the optical recording medium of the present invention include:
Examples include ultraviolet rays, electron beams, and X-rays, but especially when irradiated with ultraviolet rays with a wavelength of 190 to 420 nm at a dose of 10 mJ/cm 2 or more, an optical recording medium with excellent sensitivity and signal-to-noise ratio can be obtained. Examples of metals or semiconductors used in the recording layer of the optical recording medium of the present invention include Sn, In,
Ge, Sb, Pb, Al, Zn, Cu, Ag, Au, Bi, Se,
Examples of preferred metals or semiconductors from the viewpoint of low toxicity are Sn, In, Ge, Sb, Pb, Al,
Examples include Zn, Cu, Ag, Au, and alloys containing these as main components. The characteristics of the above metals or semiconductors include high reflectance in the oscillation wavelength range of semiconductor lasers, low melting point, low toxicity, and high stability in air, so these metals or semiconductors are the main components. When using such an alloy, care must be taken not to lose the above characteristics. The metal oxide used in the recording layer of the optical recording medium of the present invention must have excellent chemical stability and low thermal conductivity. Preferred examples include Sn, In, Al, Examples include Zr and Zn oxides, but especially Sn or In oxides have excellent stability in air and provide high sensitivity and reproduction signal.
A recording medium with a high SN ratio can be obtained. Examples of Sn or In oxides include the chemical formulas SnO 2 , InO 3 and
Low oxides such as SnO 2-x , In 2 O 3-x , Sn 1-y M y O 2 ,
Examples include SnO 2 such as In 2-Z N Z O 3 and In 2 O 3 doped with a different metal. Here x and z are
0.5 or less, y is a positive number of 0.25 or less, M is Sb, In,
N represents a metal such as Sn, Ge, Pb, or Zn. The recording layer in the optical recording medium of the present invention is made of a composite layer in which the metal or semiconductor fine particles are dispersed in the metal oxide thin film, or a laminated film of the metal or semiconductor thin film and the metal oxide thin film. However, especially when a composite layer in which the metal or semiconductor fine particles are dispersed in the metal oxide thin film is used in the recording layer, an optical recording medium with high sensitivity and a high signal-to-noise ratio can be obtained. The filling rate of metal or semiconductor fine particles in the composite layer is preferably 0.3 or more and 0.95 or less. If the filling rate is less than 0.3,
There is a tendency that the absorption coefficient of the composite layer for energy rays such as laser light decreases, and the temperature at which the composite layer melts and fluidizes increases, resulting in a decrease in the recording sensitivity of the resulting optical recording medium. When the filling factor exceeds 0.95, contact between the metal or semiconductor particles dispersed in the composite layer begins, and the particle size of the metal or semiconductor increases, resulting in irregularities in the size and shape of the recording pits, resulting in SN There is a tendency for the ratio to decrease,
Furthermore, since the thermal conductivity of the composite layer also increases, recording sensitivity tends to decrease. In the optical recording medium of the present invention, when a composite layer in which the above-mentioned metal or semiconductor fine particles are dispersed in a metal oxide is used in the recording layer, for the purpose of increasing the sensitivity and the contrast between the recording part and the end recording part. The recording layer can also be formed by laminating composite layers of different types of metals, semiconductors, and oxides, or by laminating the composite layer and a thin film of the metal or semiconductor. In the optical recording medium of the present invention, the thickness of the recording layer is
The thickness is preferably 50 Å or more, preferably 2000 Å or more. When the thickness of the recording layer exceeds 2000 Å, the volume of the area of the recording layer irradiated with energy rays increases, which reduces the density of energy absorbed when irradiated with energy rays, resulting in a decrease in the recording sensitivity of the recording medium. Furthermore, the shape around the formed pit becomes easily disordered, making it difficult to increase the signal-to-noise ratio. When the thickness of the recording layer is 50 Å or less, the difference in reflectance or transmittance between the recording part and the end recording part of the recording medium becomes small.
Since the contrast is low, it is difficult to increase the signal-to-noise ratio. When the optical recording medium of the present invention is used in a reflective optical disk, a more preferable thickness range of the recording layer is 100 Å or more and 1000 Å or less. In one embodiment of the optical recording medium of the present invention, an organic polymer layer is provided on a substrate, and after irradiating the organic polymer layer with energy rays such as ultraviolet rays, the organic polymer layer is exposed to energy rays such as ultraviolet rays. A recording layer is formed on the irradiation side surface. The substrate may be a metal plate such as aluminum, a glass plate, methyl methacrylate polymer, styrene polymer, polyvinyl chloride, polycarbonate, polyethylene terephthalate, polybutylene terephthalate,
Polyamide and epoxy resins, diallyl phthalate polymers, diethylene glycol bisallyl carbonate polymers, polyphenylene sulfide,
A sheet or film of thermoplastic or thermosetting resin such as polyphenylene oxide or polyimide is used. In particular, the substrate may contain organic polymers such as polymethyl methacrylate, a copolymer of methyl methacrylate and a vinyl monomer copolymerizable with it, polystyrene, or a copolymer of styrene and a vinyl monomer copolymerizable with it. When using a molecular weight material, after irradiating the surface of this substrate with energy rays such as ultraviolet rays, a recording layer is formed on the surface of the substrate that has been irradiated with energy rays, and an organic polymer layer is then used. The optical recording medium of the present invention having the structure shown in FIG. 2 can be obtained without any process. Furthermore, when using an organic high molecular weight material as described above for the substrate, a substrate having pre-groups on the surface is manufactured by performing cast polymerization, compression molding or injection molding using a mold or stamper, and then the pre-groups of the substrate are produced. The optical recording medium of the present invention can be obtained by irradiating energy rays such as ultraviolet rays onto the surface where the groups are formed and then forming a recording layer on the irradiated surface. When the optical recording medium of the present invention is used as an optical disk in which recording light and reproduction light are incident through a substrate, the substrate may be a glass plate, or a methyl methacrylate polymer, a styrene polymer, or a polychloride polymer. It is necessary to use a sheet of transparent plastic such as vinyl, diethylene glycol bisallyl carbonate polymer, or epoxy resin. The method for manufacturing a recording medium of the present invention will be explained below using exemplary diagrams of the layer structure. In the recording medium having the structure shown in FIG. 1, an organic polymer layer 2 is coated on a substrate 3, and then energy rays such as ultraviolet rays are irradiated from above the figure, and a recording layer is formed on the surface 4 irradiated with the energy rays. It can be obtained by forming 1. In order to coat the substrate 3 with the organic polymer layer 2, the organic polymer may be dissolved in a solvent or emulsion-formed using a method such as spin coating, roll coating or dip coating, physical vapor deposition, A method such as plasma polymerization is used. After coating the organic polymer layer 2,
This layer is irradiated with energy rays. As a specific example, a xenon-mercury lamp, a xenon lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, etc. are used as the energy source,
Irradiate at least 10 mJ/cm 2 of ultraviolet light with a wavelength of 190 to 420 nm. The intensity of ultraviolet rays is determined by the surface of the organic polymer layer.
It is desirable that it is 10 mw/cm 2 or more. When using ultraviolet rays as energy rays as mentioned above,
In particular, if a xenon-mercury lamp, high-pressure mercury lamp, or the like, which has a wavelength of 300 nm or less and has a large spectral output, is used as a radiation source, an optical recording medium with excellent recording sensitivity and signal-to-noise ratio can be obtained.
Furthermore, when substances generally called photopolymerization initiators and photosensitizers are added to the organic polymer layer, 300 nm
Even when using a radiation source with a small spectral output at the following wavelengths, it is possible to obtain an optical recording medium with excellent recording sensitivity and signal-to-noise ratio. Examples of the photopolymerization initiator and photosensitizer include benzoin isobutyl ether,
Benzoin alkyl ethers such as benzoin isopropyl ether, 2,2-dimethoxy-2,
Benzyl ketals such as phenylacetophenone, acetophenone derivatives such as diethoxyacetophenone, benzophenone, benzyl, methyl-
Examples include ketones such as o-benzoin benzoate. The amount of UV irradiation should be 10mJ/ cm2 or more,
Although there is no particular upper limit, when manufacturing an optical recording medium with the structure shown in Figure 2 using an organic high molecular weight material such as polymethyl methacrylate for the substrate, the mechanical strength of the substrate may decrease due to ultraviolet irradiation. Care must be taken to avoid deformation due to heat. In this case, by using a xenon-mercury lamp or a high-pressure mercury lamp as the radiation source and selecting the irradiation dose appropriately, recording with high sensitivity and high signal-to-noise ratio can be achieved without reducing the mechanical strength or deforming the substrate. A medium is obtained. The optical recording medium of the present invention can be obtained by irradiating an organic polymer layer provided on a substrate with energy rays as described above, and then forming a recording layer on the surface irradiated with energy rays. To form the recording layer, a vacuum deposition method, an ionization deposition method, an ion plating method, a cluster ion beam deposition method, a sputtering method, etc. are used. When using a composite layer in which fine metal or semiconductor particles are dispersed in a metal oxide as a recording layer, the metal or semiconductor and the metal oxide are placed in separate crucibles and placed in a vacuum of 1 x 10 -3 mmHg or less. evaporation and deposition at the same time. It is also possible to use an ion plating method in which ionized particles are accelerated by applying a DC voltage to the substrate side at the same time as ionization. Composite layers can also be formed by simultaneous sputtering using a metal or edge conductor target and a metal oxide target. In any case, when forming a composite layer, a composite layer having a predetermined metal or semiconductor filling rate and thickness can be obtained by separately controlling the vapor deposition rate and sputtering rate of the metal or semiconductor and metal oxide. When using a recording layer in which thin films of metal or semiconductor and thin films of metal oxide are alternately laminated, the metal or semiconductor and metal oxide are alternately deposited or sputtered using the same method as when forming a composite layer. By doing so, a recording layer is formed. The recording layer in the optical recording medium of the present invention is extremely stable under normal environments, and there is no need to provide a protective layer, but protection against mechanical shock, etc.
A protective layer can be provided on the recording layer for the purpose of preventing problems in recording and reproduction due to adhesion of dust and the like. As a protective layer, SiO 2 ,
Inorganic materials and organic polymer materials such as Al 2 O 3 and TiO 2 are used. In the optical recording medium of the present invention shown in FIGS. 1 and 2, when the organic polymer layer 2 and the substrate 3 are transparent, the recording light and the reproducing light are incident from above the diagram. The light may also be incident from below. The optical recording medium of the present invention has low toxicity and high sensitivity,
Excellent stability in air and SN
It is characterized by an extremely high ratio. Although the reason why the optical recording medium of the present invention exhibits the above-mentioned excellent characteristics is not necessarily clear at present, it can be estimated as follows. When the organic polymer layer in the optical recording medium of the present invention is irradiated with energy rays such as ultraviolet rays, the main chain is cut, especially near the surface irradiated with the energy rays, and the molecular weight is reduced. The surface energy decreases as the surface energy decreases. On the other hand, recording pits are formed by moving the recording layer that has been melted or fluidized by irradiation with energy rays such as laser light. Since the surface energy of the organic polymer layer is low, the difference in surface energy between this layer and the melted or fluidized recording layer becomes large.
It is thought that the melted or fluidized recording layer moves smoothly. Alternatively, when the recording layer is irradiated with laser light, if the energy of the laser light melts the portion of the organic polymer layer whose molecular weight has been reduced by energy ray irradiation, the laser light irradiation may melt or fluidize the part. It is also conceivable that the particles may move together with the deposited recording layer and become susceptible to pit formation. As a result, pits with uniform shape and size are formed with low irradiation energy, resulting in an optical recording medium with high sensitivity and high signal-to-noise ratio. Furthermore, since the metals, semiconductors, metal oxides, etc. used in the recording layer of the optical recording medium of the present invention are all stable in air and water and have low toxicity, the optical recording medium of the present invention
As an optical disk for recording and reproduction, it can be used not only as an image file, document file, data file, and external memory of a computer, but also as a tape, card, microfiche, etc. that can be directly recorded and reproduced with laser light. The details of the present invention will be described below using examples, but the present invention is not limited to these examples. Example 1 Polymethyl methacrylate (Acrycon manufactured by Mitsubishi Rayon) was deposited on a glass disc-shaped substrate with a thickness of 1.2 mm, an outer diameter of 300 mm, and an inner diameter of 35 mm using a spinner.
A methyl ethyl ketone solution was applied and dried to form a polymethyl methacrylate layer with a thickness of 3 μm. The resulting substrate with the polymethyl methacrylate layer was heated to a wavelength of 450 nm or less using a condensing irradiation device equipped with a high-pressure mercury lamp with a lamp output of 80 W/cm.
The polymethyl methacrylate layer was irradiated with ultraviolet light having an energy of 120 mJ/cm 2 by passing through an area of 30 mW/cm 2 using a belt conveyor. The glass substrate having the polymethyl methacrylate layer irradiated with ultraviolet rays obtained as described above was attached to the chamber of a vacuum evaporation device, and each of the two crucibles of the evaporation device was filled with Sn (Furuuchi Chemical Co., Ltd.,
20φ×10mmt, purity 99.99%) and SnO 2 (manufactured by Furuuchi Chemical, 18φ×5mmt, purity 99.99%), and while rotating the substrate at a speed of 20 rpm, the vacuum was 2×.
At 10 -6 mHg, Sn and SnO 2 were irradiated with electron beams from separate electron guns, and vapor deposition was performed while controlling the evaporation rate of Sn and SnO 2 onto the ultraviolet irradiated surface of the polymethyl methacrylate layer. An optical recording medium having the structure shown in FIG. 1 was manufactured, having a recording layer having a thickness of 270 Å and consisting of a composite layer in which Sn fine particles with a Sn filling factor of 0.8 were dispersed in SnO 2 . While rotating the obtained disk-shaped optical recording medium at a speed of 1800 revolutions per minute, the frequency of
The oscillation light of a semiconductor laser (HLP-1600 manufactured by Hitachi, oscillation wavelength 830 nm) modulated to a pulse width of 100 nsec is focused and irradiated onto the recording layer to a beam diameter of 1 μm through the collimator lens, condensing lens, and substrate. When recording was carried out using this method, the laser beam intensity on the recording surface of the disk required to form pits with a minor axis of approximately 1 μm was 6 mW. In addition, the recorded signal was reproduced using the same semiconductor laser used for recording at a laser light intensity of 1 mW, and the CN ratio was measured with a spectrum analyzer under the conditions of a reference signal of 5 MHz and a band width of 30 KHz.
It was 52dB. Comparative Example 1 A glass disk-shaped substrate similar to that used in Example 1 was attached to the chamber of a vacuum evaporation device,
Using electron beam evaporation at a substrate rotation speed of 20 rpm and a vacuum level of 2 x 10 -6 mmHg, the same procedure as in Example 1 was carried out.
Sn and SnO 2 were co-deposited on the surface of the glass substrate while adjusting the deposition rate, and Sn was deposited to a thickness of 260 Å.
A sample was fabricated in which a composite layer of Sn dispersed in SnO 2 with a filling factor of 0.8 was formed on a glass substrate. The obtained disk-shaped sample was subjected to repeated 100 nm treatment at a frequency of 5 MHz in the same manner as in Example 1.
An attempt was made to record with a semiconductor laser beam modulated to a pulse width of sec, but it was not possible to form pits even at a laser beam intensity of 12 mW on the recording surface of the disk. As shown above, Sn fine particles are formed on the glass substrate.
It is clear that the sensitivity of the sample in which the composite layer dispersed in SnO 2 was directly formed is significantly lower than that of the optical recording medium of the present invention. Comparative Example 2 A polymethyl methacrylate layer with a thickness of 3 μm was provided on a glass disc-shaped substrate similar to that used in Example 1 in the same manner as in Example 1, and a substrate with the obtained polymethyl methacrylate layer was obtained. was attached to the chamber of a vacuum evaporation device, and Sn and SnO 2 were co-evaporated under the same conditions as in Example 1 to form a polymethyl methacrylate layer with a thickness of 270 Å and a Sn filling rate of 0.8.
A sample was fabricated in which a composite layer was formed in which fine Sn particles were dispersed in SnO 2 . The obtained disk-shaped sample was repeatedly heated for 100 ns at a frequency of 5 MHz in the same manner as in Example 1.
When recording was performed with a semiconductor laser beam modulated to a pulse width of to the reference signal
The CN ratio measured with a spectrum analyzer under the conditions of 5 MHz and 30 KHz band width was 41 dB. As shown above, a sample obtained by directly forming a recording layer on a polymethyl methacrylate layer provided on a glass substrate without irradiating energy rays such as ultraviolet rays can be used in the optical recording medium of the present invention. In comparison, the recording sensitivity is low and the CN ratio is also low. Example 2 An organic polymer layer with a thickness of 3 μm shown in Table 1 was formed on a disk-shaped glass substrate similar to that used in Example 1 using the same method as in Example 1. The polymer layer was irradiated with ultraviolet rays having an energy of 120 mJ/cm 2 using the same method as in Example 1. Using the same method as in Example 1, fine particles of the metals shown in Table 1 were dispersed in the metal oxides also shown in Table 1 on the organic polymer layer obtained as above and irradiated with ultraviolet rays. and metal filling rate 0.85, thickness
An optical recording medium with a 280 Å composite recording layer was fabricated. When recording and reproducing the obtained disc-shaped optical recording medium under the same conditions as in Example 1, the laser light intensity on the recording surface of the disc necessary to form pits with a short axis of approximately 1 μm, The CN ratio is shown in Table 1.
【表】
実施例 3
厚さ1.2mm、外径300mm、径35mmのキヤスト法で
製作したポリメチルメタクリレートからなるデイ
スク状のシートを5枚用意し、このうち4枚につ
いてランプ出力80W/cmの高圧水銀灯を有する集
光型照射装置で450nm以下の波長の光強度
30mW/cm2の領域をベルトコンベアを用いて、速
度を変えて通過させることにより、ポリメチルメ
タクリレートシートに表2に示すエネルギーの紫
外線を照射した。
上記の如くして得られた、紫外線照射を受けた
4枚のポリメチルメタクリレートシートを真空蒸
着装置のチヤンバーに取り付け、実施例1と同様
の方法を用いて、上記ポリメチルメタクリレート
シートの紫外線照射面上に厚さ300Åで、Snの充
填率が0.85のSn微粒子がSnO2中に分散した複合
層からなる記録層を有する第2図に示す構成の光
記録媒体を製作した。
得られたデイスク状光記録媒体について、実施
例1と同様の条件で記録再生を行つたところ、短
径がほぼ1μmのピツトを形成させるのに必要なデ
イスクの記録面上に於けるレーザ光強度、CN比
を表2に示す。
尚比較のため、上記ポリメチルメタクリレート
シートの残りの1枚の表面上に、紫外線照射する
ことなく、直接上記記録層を形成させた試料の記
録再生特性を試料番号3−5として表2に同時に
示す。[Table] Example 3 Five disc-shaped sheets made of polymethyl methacrylate made by the casting method with a thickness of 1.2 mm, an outer diameter of 300 mm, and a diameter of 35 mm were prepared, and four of these disc-shaped sheets were heated to a high voltage with a lamp output of 80 W/cm. Light intensity at a wavelength of 450 nm or less using a condensing irradiation device with a mercury lamp
The polymethyl methacrylate sheet was irradiated with ultraviolet rays having the energies shown in Table 2 by passing through an area of 30 mW/cm 2 at different speeds using a belt conveyor. The four polymethyl methacrylate sheets obtained as described above and irradiated with ultraviolet rays were attached to the chamber of a vacuum evaporation apparatus, and the ultraviolet irradiated surface of the polymethyl methacrylate sheet was An optical recording medium having the structure shown in FIG. 2 was fabricated, having a recording layer having a thickness of 300 Å and consisting of a composite layer in which Sn fine particles with a Sn filling factor of 0.85 were dispersed in SnO 2 . When recording and reproducing was performed on the obtained disc-shaped optical recording medium under the same conditions as in Example 1, the laser light intensity on the recording surface of the disc required to form pits with a short axis of approximately 1 μm was determined. , CN ratio is shown in Table 2. For comparison, the recording and reproducing characteristics of a sample in which the recording layer was directly formed on the surface of the remaining polymethyl methacrylate sheet without UV irradiation are also shown in Table 2 as sample number 3-5. show.
【表】
実施例 4
実施例3で用いたのと同様のポリメチルメタク
リレートシート9枚を用意し、これ等シートに実
施例3に於けるのと同様の紫外線照射装置を用い
て90mJ/cm2のエネルギーの紫外線を照射した。
上記の如くして得られた紫外線照射を受けたポ
リメチルメタクリレートシートの紫外線照射面上
に実施例1と同様の方法を用いて表3に示す金属
もしくは半導体の微粒子が表3に示す金属酸化物
中に分散し、金属もしくは半導体の充填率および
膜厚が同じく表3に示す値の複合層からなる記録
層を有する光記録媒体を製作した。
得られたデイスク状光記録媒体について実施例
1と同様の条件で記録再生を行つた場合、短径が
ほぼ1μmのピツトを形成させるのに必要なデイス
クの記録面上に於けるレーザ光強度、CN比を表
3に示す。[Table] Example 4 Nine polymethyl methacrylate sheets similar to those used in Example 3 were prepared, and these sheets were exposed to 90 mJ/cm 2 using the same ultraviolet irradiation device as in Example 3. irradiated with ultraviolet rays of energy. Using the same method as in Example 1, fine particles of the metals or semiconductors shown in Table 3 were deposited on the ultraviolet irradiated surface of the polymethyl methacrylate sheet that had been irradiated with the ultraviolet rays obtained as described above. An optical recording medium having a recording layer consisting of a composite layer having metal or semiconductor filling ratios and film thicknesses shown in Table 3 was produced. When recording and reproducing the obtained disc-shaped optical recording medium under the same conditions as in Example 1, the laser light intensity on the recording surface of the disc necessary to form pits with a short axis of approximately 1 μm, Table 3 shows the CN ratio.
【表】
実施例 5
実施例3で用いたのと同様のポリメチルメタク
リレートのシートに、実施例3に於けるのと同様
の紫外線照射装置を用いて90mJ/cm2のエネルギ
ーの紫外線を照射した。
上記の如くして得られた紫外線照射を受けたポ
リメチルメタクリレートシートを直径200mmの
SnO2およびSbのターゲツト(いずれもフルウチ
化学製、純度99.9%)を装備したスパツタ装置の
チヤンバーに取り付け、上記ポリメチルメタクリ
レートのシートを回転させながら、このシートの
紫外線照射面上にまず30Åの厚さのSb層を形成
させ、ついでこのSb層上に20Åの厚さのSnO2を
形成させる。この操作を5回くりかえし、最後に
30Åの厚さのSb層を形成させることにより、30
Åの厚さのSb層6層と、Sb層にはさまれた20Å
の厚さの5層のSnO2層よりなる積層厚さ280Åの
記録層を有する光記録媒体を製作した。
得られたデイスク状光記録媒体について、実施
例1と同様の条件で記録再生を行つたところ、短
径がほぼ1μmのピツトを形成させるのに必要なデ
イスクの記録面上に於けるレーザ光強度10mW、
CN比48dBであつた。
実施例 6
実施例3で用いたのと同様のポリメチルメタク
リレートのシートに実施例3に於けるのと同様の
紫外線照射装置を用いて、90mJ/cm2のエネルギ
ーの紫外線を照射した。
上記の如くして得られた紫外線照射装置を受け
たポリメチルメタクリレートシートを真空蒸着装
置のチヤンバーに取り付け、蒸着装置の三つのル
ツボにそれぞれSn(フルウチ化学製、20φ×10mm
t、純度99.99%)、SnO2(フルウチ化学製、18φ
×15mmt、純度99.99%)、Ge(フルウチ化学製、
30φ×10mmt、純度99.999%)を入れ、このシー
トを30rpmの速度で回転させながら、真空度2×
106mmHgの条件に於て電子ビーム蒸着法を用い、
ポリメチルメタクリレートシートの紫外線照射面
上に、まずGeを40Åの厚さに蒸着し、次いでSn
及びSnO2にそれぞれ別の電子銃より電子線を照
射し、Sn及びSnO2の蒸発速度を調節しながら共
蒸着を行うことにより、Snの充填率0.8で膜厚180
ÅのSn微粒子がSnO2中に分散した複合層をGe層
上に形成し、最後にこの複合層上に再び厚さ40Å
のGe層を形成することにより、厚さ260Åの記録
層を有するデイスク状の光記録媒体を製作した。
得られたデイスク状の光記録媒体について実施
例1と同様の条件で記録再生を行つたところ、短
径がほぼ1μmのピツトを形成させるのに必要な
デイスクの記録面上に於けるレーザ光強度は
6mW、CN比57dBの値が得られた。
また、上記実施例1乃至実施例6において記録
済のデイスク状光記録媒体を60℃、95%RHの恒
温恒湿層内に入れ、120日間の耐湿熱性試験を行
つたところ、CN比に変化は認められなかつた。[Table] Example 5 A sheet of polymethyl methacrylate similar to that used in Example 3 was irradiated with ultraviolet rays with an energy of 90 mJ/cm 2 using the same ultraviolet irradiation device as in Example 3. . The polymethyl methacrylate sheet obtained as above and irradiated with ultraviolet rays was heated to a diameter of 200 mm.
It was attached to the chamber of a sputtering device equipped with SnO 2 and Sb targets (both made by Furuuchi Chemical, purity 99.9%), and while rotating the polymethyl methacrylate sheet, a 30 Å thick layer was first placed on the ultraviolet irradiated surface of the sheet. A thin Sb layer is formed, and then a 20 Å thick SnO 2 layer is formed on this Sb layer. Repeat this operation 5 times, and finally
By forming a 30 Å thick Sb layer, 30
6 layers of Sb with a thickness of Å, and a layer of 20 Å sandwiched between the Sb layers
An optical recording medium having a recording layer with a stacked thickness of 280 Å consisting of 5 SnO 2 layers with a thickness of 280 Å was fabricated. When recording and reproducing was performed on the obtained disc-shaped optical recording medium under the same conditions as in Example 1, the laser light intensity on the recording surface of the disc required to form pits with a short axis of approximately 1 μm was determined. 10mW,
The CN ratio was 48dB. Example 6 A sheet of polymethyl methacrylate similar to that used in Example 3 was irradiated with ultraviolet light having an energy of 90 mJ/cm 2 using the same ultraviolet irradiation device as in Example 3. The polymethyl methacrylate sheet that had been exposed to the ultraviolet irradiation device obtained above was attached to the chamber of a vacuum evaporation device, and each of the three crucibles of the evaporation device was filled with Sn (manufactured by Furuuchi Chemical Co., Ltd., 20φ×10mm).
t, purity 99.99%), SnO 2 (manufactured by Furuuchi Chemical, 18φ
×15mmt, purity 99.99%), Ge (manufactured by Furuuchi Chemical,
30φ×10mmt, purity 99.999%), and while rotating this sheet at a speed of 30 rpm,
Using electron beam evaporation method under the condition of 10 6 mmHg,
Ge was first vapor-deposited to a thickness of 40 Å on the ultraviolet irradiated surface of the polymethyl methacrylate sheet, and then Sn
By irradiating electron beams on and SnO 2 from separate electron guns and performing co-evaporation while controlling the evaporation rate of Sn and SnO 2 , a film thickness of 180 mm was obtained with a Sn filling rate of 0.8.
A composite layer in which Sn fine particles of Å are dispersed in SnO 2 is formed on the Ge layer, and finally a layer of 40 Å thick is formed on this composite layer again.
A disk-shaped optical recording medium having a recording layer with a thickness of 260 Å was fabricated by forming a Ge layer of 260 Å. When recording and reproducing was performed on the obtained disc-shaped optical recording medium under the same conditions as in Example 1, the laser beam intensity on the recording surface of the disc required to form pits with a short axis of approximately 1 μm was determined. teeth
A value of 6mW and CN ratio of 57dB was obtained. In addition, when the disc-shaped optical recording medium recorded in Examples 1 to 6 above was placed in a constant temperature and humidity layer at 60°C and 95% RH, and a 120-day moisture and heat resistance test was conducted, the CN ratio changed. was not recognized.
第1図及び第2図は本発明の光記録媒体の断面
図である。
各図に於て、1は記録層、2は有機高分子量物
層、3は基板、4は2のエネルギー線照射面を示
す。
1 and 2 are cross-sectional views of the optical recording medium of the present invention. In each figure, 1 is a recording layer, 2 is an organic polymer layer, 3 is a substrate, and 4 is an energy beam irradiated surface of 2.
Claims (1)
乃至420nmの紫外線が照射されて主鎖の一部が切
断された有機高分子量物層と、該有機高分子量物
層上に設けられた金属もしくは半導体と金属酸化
物からなる記録層によつて構成された光記録媒
体。 2 有機高分子量物がポリメチルメタクリレー
ト、メチルメタクリレートを主成分とする共重合
物あるいはポリスチレンまたはスチレンを主成分
とする共重合物より選ばれた少なくとも一種であ
る特許請求の範囲第1項に記載の光記録媒体。 3 金属または半導体がSn、In、Sb、Pb、Al、
Zn、Cu、Ag、Au、Geより選ばれた少なくとも
一種である特許請求の範囲第1項に記載の光記録
媒体。 4 金属酸化物がSn、In、Al、Zr、及びZnの酸
化物より選ばれた少なくとも一種である特許請求
の範囲第1項に記載の光記録媒体。 5 記録層が金属酸化物の薄膜中に金属もしくは
半導体の微粒子が分散した複合層である特許請求
の範囲第1項に記載の光記録媒体。[Claims] 1. Energy amount is 10 mj/cm 2 or more and wavelength 190
Consisting of an organic polymer layer whose main chain has been partially cut by irradiation with ultraviolet light of 420 nm, and a recording layer made of a metal or semiconductor and a metal oxide provided on the organic polymer layer. optical recording media. 2. The organic polymer according to claim 1, wherein the organic polymer is at least one selected from polymethyl methacrylate, a copolymer containing methyl methacrylate as a main component, or polystyrene or a copolymer containing styrene as a main component. optical recording medium. 3 The metal or semiconductor is Sn, In, Sb, Pb, Al,
The optical recording medium according to claim 1, which is at least one selected from Zn, Cu, Ag, Au, and Ge. 4. The optical recording medium according to claim 1, wherein the metal oxide is at least one selected from oxides of Sn, In, Al, Zr, and Zn. 5. The optical recording medium according to claim 1, wherein the recording layer is a composite layer in which fine particles of metal or semiconductor are dispersed in a thin film of metal oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58101689A JPS59227488A (en) | 1983-06-09 | 1983-06-09 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58101689A JPS59227488A (en) | 1983-06-09 | 1983-06-09 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59227488A JPS59227488A (en) | 1984-12-20 |
| JPH0376239B2 true JPH0376239B2 (en) | 1991-12-04 |
Family
ID=14307302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58101689A Granted JPS59227488A (en) | 1983-06-09 | 1983-06-09 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59227488A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6241089A (en) * | 1985-08-19 | 1987-02-23 | Nec Corp | Optical recording material |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS535623A (en) * | 1976-07-03 | 1978-01-19 | Gakken Co Ltd | Light source |
| JPS5318551A (en) * | 1976-08-02 | 1978-02-20 | Kao Corp | 4-homoprotoadamantane and its preparation |
| JPS5690439A (en) * | 1979-12-20 | 1981-07-22 | Sumitomo Chem Co Ltd | Material for reproducing optical signal records |
-
1983
- 1983-06-09 JP JP58101689A patent/JPS59227488A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59227488A (en) | 1984-12-20 |
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