JPS59227488A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPS59227488A JPS59227488A JP58101689A JP10168983A JPS59227488A JP S59227488 A JPS59227488 A JP S59227488A JP 58101689 A JP58101689 A JP 58101689A JP 10168983 A JP10168983 A JP 10168983A JP S59227488 A JPS59227488 A JP S59227488A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording medium
- optical recording
- metal
- recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2572—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24304—Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/2432—Oxygen
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、レーザ光等のエネルギー線を照射することに
よって、記録層のエネルギー線照射部が溶融等により変
形または除去されることによって生じる反射率もしくは
透過率の変化を利用して光学的に情報の記録、再生を行
うのに適した記録媒体に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention aims to reduce the change in reflectance or transmittance caused by deformation or removal of the energy ray irradiated portion of the recording layer by melting or the like by irradiating it with energy rays such as laser light. The present invention relates to a recording medium suitable for optically recording and reproducing information.
光ディスク等の光記録媒体に要求される性質としては、
記録光源に用いるレーザの波長領域での記録感度が高い
こと、再生信号のSN比が高いこと、記録密度が高いこ
と、保存安定性にすぐれていること、及び毒性が低いこ
とが挙げられる。The properties required for optical recording media such as optical discs are as follows:
These include high recording sensitivity in the wavelength range of the laser used as the recording light source, high signal-to-noise ratio of the reproduced signal, high recording density, excellent storage stability, and low toxicity.
レーザ光照射部の温度」二昇により記録層が融解し、ピ
ントを形成するいわゆるヒートモード型記録媒体に於て
、記録感度を高くするためには、記録層の分光吸収率が
高いこと、融点、比熱および熱伝導率が低いことが必要
で、また記録層の厚さは薄いことが望ましい。再生信号
のSN比を高くするためには、ビットの形状、大きさが
揃っどいて、ピント周辺に乱れが無いこと、及び再生に
反射光を使用する場合には、記録部と未記録部との反射
率の差が大きいこと、また記録密度を高くするためには
、熱伝導率が低いことが要求される。また保存安定性に
すぐれた記録媒体を得るためには、記録層の酸化安定性
及び耐湿性が高いことが要求される。In so-called heat mode recording media, in which the recording layer melts and forms a focus when the temperature of the laser beam irradiation area rises, in order to increase the recording sensitivity, the recording layer must have a high spectral absorption rate, a high melting point , specific heat and thermal conductivity are required to be low, and it is desirable that the recording layer be thin. In order to increase the signal-to-noise ratio of the reproduced signal, it is necessary to make sure that the bits have the same shape and size and that there is no disturbance around the focus, and that when using reflected light for reproduction, the recorded and unrecorded areas are In addition, in order to increase the recording density, the thermal conductivity is required to be low. Furthermore, in order to obtain a recording medium with excellent storage stability, the recording layer is required to have high oxidation stability and moisture resistance.
レーザ用記録媒体として現在量もすぐれているとされて
いるのは、ガラスまたはプラスチック基板上に記録層と
してテルルまたはテルル−砒素合金等のテルル合金薄膜
を形成したものである。テルル及びテルル合金薄膜は、
可視−近赤外の波長領域で光の吸収率が高く、低熱伝導
率、低融点であるため記録感度が高く、またビットの形
状、大きさも揃い易く、且つ可視−近赤外の波長領域で
適当な反射率を有しているため、反射光によってSN比
の高い再生信号が得られるなど、ヒートモード型レーザ
記録媒体に適した性質を持っている。しかしテルル薄膜
及びオルルー砒素合金WIJIli2には、酸化安定性
が低いこと及び毒性が高い等の欠点がある。酸化安定性
の改良にはテルルまたはテルル−砒素合金にセレンを添
加したり、テルル低酸化物を用いる等の方法が試みられ
ているが、現在まで充分なものは得られておらず、また
毒性に関しては効果的な対策は見出されていない。The currently available recording medium for lasers is one in which a thin film of tellurium or a tellurium alloy such as a tellurium-arsenic alloy is formed as a recording layer on a glass or plastic substrate. Tellurium and tellurium alloy thin films are
It has high light absorption rate in the visible to near infrared wavelength range, low thermal conductivity, and low melting point, so it has high recording sensitivity, and the bit shape and size are easy to match, and it is suitable for the visible to near infrared wavelength range. Since it has an appropriate reflectance, it has properties suitable for a heat mode laser recording medium, such as being able to obtain a reproduced signal with a high signal-to-noise ratio using reflected light. However, the tellurium thin film and the orlu-arsenic alloy WIJIli2 have drawbacks such as low oxidation stability and high toxicity. Attempts have been made to improve the oxidation stability by adding selenium to tellurium or tellurium-arsenic alloys, or by using low tellurium oxides, but so far no satisfactory results have been obtained, and the toxicity No effective measures have been found for this.
毒性の点では、テルル系記録媒体に比較して有利なもの
に、ガラスまたはプラスチック基板上、もしくは該基板
上に設けたアルミニウム等の反射層の上に色素または色
素をポリマーに分散した層を形成した記録媒体がある。In terms of toxicity, it is advantageous compared to tellurium-based recording media to form a dye or a layer in which the dye is dispersed in a polymer on a glass or plastic substrate, or on a reflective layer such as aluminum provided on the substrate. There is a recording medium that has
しかし、一般に色素の吸収波長は、赤色光より短波長側
にあり、今後記録用光源の主流となると予想されている
半導体レーザの発振波長域である7 50 nm〜85
0 nmの領域で大きな吸収を示す安定な色素が得られ
ないため、半導体レーザを記録用光源とする色素系記録
媒体で実用的なものは得られていない。However, the absorption wavelength of dyes is generally on the shorter wavelength side than red light, and is in the oscillation wavelength range of 750 nm to 85 nm, which is the oscillation wavelength range of semiconductor lasers, which are expected to become the mainstream of recording light sources in the future.
Since a stable dye that exhibits large absorption in the 0 nm region cannot be obtained, a practical dye-based recording medium using a semiconductor laser as a recording light source has not been obtained.
本発明者等は、毒性が低く、酸化安定性及び耐水性にす
ぐれた光記録媒体の完成を目的として鋭意研究を進めた
結果、基板上にコーティングされたポリメチルメタクリ
レート等の有機高分子量物層に紫外線等のエネルギー線
を照射し、この紫外線照射面上に、金属もしくは半導体
の微粒子が金属酸化物薄膜中に分散した複合層からなる
記録層、または金属もしくは半導体の薄膜と金属酸化物
の薄膜が交互に積層された記録層を形成することによっ
て高感度でSN比が極めて高く、且つ安定でしかも毒性
の低い光記録媒体が得られることを見出し、本発明に到
達した。As a result of intensive research aimed at completing optical recording media with low toxicity, excellent oxidation stability, and water resistance, the present inventors discovered that a layer of organic high molecular weight material such as polymethyl methacrylate coated on a substrate. is irradiated with energy rays such as ultraviolet rays, and a recording layer consisting of a composite layer in which fine metal or semiconductor particles are dispersed in a metal oxide thin film, or a thin film of a metal or semiconductor thin film and a metal oxide thin film is formed on the ultraviolet irradiated surface. It was discovered that an optical recording medium with high sensitivity, an extremely high signal-to-noise ratio, stable and low toxicity can be obtained by forming a recording layer in which these are alternately laminated, and the present invention was achieved based on this discovery.
本発明の要旨とするところは、エネルギー線が照射され
た有機高分子量物層のエネルギー綿照射面上に金属もし
くは半導体と金N酸化物からなる記録層が設けられてい
ることを特徴とする光記録媒体の機構と構成にある。The gist of the present invention is to provide a light beam characterized in that a recording layer made of a metal or semiconductor and gold-N oxide is provided on the energy ray irradiated surface of an organic polymer layer irradiated with energy rays. It lies in the mechanism and composition of the recording medium.
第1図に、本発明の光記録媒体の層構成の一例を示す。FIG. 1 shows an example of the layer structure of the optical recording medium of the present invention.
第1図に於ては、基板3上に形成された有機高分子量物
層2の紫外線等のエネルギー線照射面4」二に金属もし
くは半導体と金属酸化物からなる記録層1が設けられて
も)る。この光記録媒体に於ては、基板側もしくは基板
と反対側から入射したレーザ光等のエネルギー線は記録
層に吸収され、発生した熱により記録層が融解もしくは
流動化し、ビットを形成することによって生じる媒体の
エネルギー線が照射された記録層部分とエネルギー線が
照射されない記録層部分の光の反射率、透過率等の光学
的性質の変化を利用して記録再生が行われる。In FIG. 1, a recording layer 1 made of a metal or a semiconductor and a metal oxide is provided on a surface 4'' irradiated with energy rays such as ultraviolet rays of an organic polymer layer 2 formed on a substrate 3. ). In this optical recording medium, energy rays such as laser beams incident from the substrate side or the opposite side to the substrate are absorbed by the recording layer, and the recording layer is melted or fluidized by the generated heat, forming bits. Recording and reproduction is performed by utilizing changes in optical properties such as light reflectance and transmittance of the recording layer portion of the medium that is irradiated with energy rays and the recording layer portion that is not irradiated with energy rays.
本発明の光記録媒体に用いられる有機高分子量物は、紫
外線等のエネルギー線の照射により容易に主鎖の一部が
切断され、平均分子量が低下する性質を有するもので、
具体例としてはポリメチルメタクリレート、メチルメタ
クリレート及びこれと共重合可能なビニル単量体との共
重合物、ポリスチレン、スチレン及びこれと共重合可能
なビニル単量体との共重合物、ポリアクリロニトリル、
アクリロニトリル及びこれと共重合可能なビニル単量体
との共重合物が挙げられる。特に、メチルメタクリレー
ト系重合体またはスチレン系重合体を用いた場合に、高
感度でSN比の高い光記録媒体が得られる。ここでメチ
ルメタクリレートに共重合可能なビニル単量体の例とし
ては、メチルアクリレート、エチルアクリレート、ブチ
ルアクリレート等のアクリル酸アルキルエステル類、エ
チルメタクリレート、プロピルメタクリレート、シクロ
ヘキシルメタクリレート、ベンジルメタクリレート等の
メタクリル酸アルキルエステル類、スチレン、α−メチ
ルスチレン、p−クロルスチレン等の芳香族ビニル系単
量体、アクリロニトリル、メタアクリロニトリル等の不
飽和ニトリル系単量体、フマール酸ジメチル、フマール
酸ジブチル、マレイン酸ジメチル、マレイン酸ジブチル
等の不飽和ジカルボン酸のジアルキルエステル類、酢酸
ビニル、プロピオン酸ビニル等のビニルエステル類、ビ
ニルエチルエーテル、ビニルエチルエーテル等のビニル
エーテル類、塩化ビニル、塩化ビニリデン等の含塩素ビ
ニル単量体等が挙げられる。またスチレン等と共重合可
能なビニル単量体の例としては、メチルメタクリレート
、エチルメタクリレート、プロピルメタクリレート、シ
クロヘキシルメタクリレート、ベンジルメタクリレート
、メチルアクリレート、エチルアクリレート等のメタク
リル酸またはアクリル酸のアルキルエステル類、アクリ
ロニトリル、メタアクリロニトリル等の不飽和ニトリル
系単量体、α−メチルスチレン、m−メチルスチレン、
p−メチルスチレン、0−クロルスチレン、m−クロル
スチレン、p−クロルスチレン等の芳香族ビニル単量体
、無水マレイン酸等の不飽和カルボン酸等が挙げられる
。The organic high molecular weight substance used in the optical recording medium of the present invention has a property that a part of the main chain is easily cut off by irradiation with energy rays such as ultraviolet rays, and the average molecular weight is reduced.
Specific examples include polymethyl methacrylate, a copolymer of methyl methacrylate and a vinyl monomer copolymerizable with it, polystyrene, a copolymer of styrene and a vinyl monomer copolymerizable with it, polyacrylonitrile,
Examples include acrylonitrile and copolymers of vinyl monomers copolymerizable with acrylonitrile. In particular, when a methyl methacrylate polymer or a styrene polymer is used, an optical recording medium with high sensitivity and a high signal-to-noise ratio can be obtained. Examples of vinyl monomers that can be copolymerized with methyl methacrylate include acrylic acid alkyl esters such as methyl acrylate, ethyl acrylate, and butyl acrylate, and methacrylic acid alkyl esters such as ethyl methacrylate, propyl methacrylate, cyclohexyl methacrylate, and benzyl methacrylate. Esters, aromatic vinyl monomers such as styrene, α-methylstyrene and p-chlorostyrene, unsaturated nitrile monomers such as acrylonitrile and methacrylonitrile, dimethyl fumarate, dibutyl fumarate, dimethyl maleate, Dialkyl esters of unsaturated dicarboxylic acids such as dibutyl maleate, vinyl esters such as vinyl acetate and vinyl propionate, vinyl ethers such as vinyl ethyl ether and vinyl ethyl ether, chlorinated vinyl monomers such as vinyl chloride and vinylidene chloride. Examples include the body. Examples of vinyl monomers that can be copolymerized with styrene include alkyl esters of methacrylic acid or acrylic acid such as methyl methacrylate, ethyl methacrylate, propyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, methyl acrylate, and ethyl acrylate, and acrylonitrile. , unsaturated nitrile monomers such as methacrylonitrile, α-methylstyrene, m-methylstyrene,
Examples include aromatic vinyl monomers such as p-methylstyrene, 0-chlorostyrene, m-chlorostyrene, and p-chlorostyrene, and unsaturated carboxylic acids such as maleic anhydride.
有機高分子量物層の厚さは500人以−にであることが
必要である。有18!高分子量物層の厚さが500Å以
下であると、感度及びSN比の高い光記録媒体が得られ
なし)。本発明の光記録媒体の有機高分子量物に照射す
るエネルギー線の例としては、紫外線、電子線、X線等
が挙げられるが、特に波長190〜420 nmの紫外
線を10mJ/cm以上照射した場合に感度、SN比の
すぐれた光記録媒体が得られる。The thickness of the organic polymer layer must be 500 or more. Yes 18! If the thickness of the polymer layer is less than 500 Å, an optical recording medium with high sensitivity and high signal-to-noise ratio cannot be obtained). Examples of energy rays irradiated to the organic high molecular weight material of the optical recording medium of the present invention include ultraviolet rays, electron beams, X-rays, etc., but in particular, when irradiating ultraviolet rays with a wavelength of 190 to 420 nm at a rate of 10 mJ/cm or more An optical recording medium with excellent sensitivity and signal-to-noise ratio can be obtained.
本発明の光記録媒体に於ける記録層に用いられる金属も
しくは半導体の例としては、Sn、、In、、Ge1S
b、、Pb、八1..Zn。Examples of metals or semiconductors used in the recording layer of the optical recording medium of the present invention include Sn, In, Ge1S.
b,,Pb,81. .. Zn.
Cu、 Ag、八11SBi、 Ses Te及びこれ
らを主成分とする合金が挙げられるが、低毒性の観点か
ら好ましい金属もしくは半導体の例としては、Sn、、
In、GCs sb、 pb、^1..Zn、 Cu、
Ag。Examples include Cu, Ag, 811SBi, SesTe, and alloys containing these as main components. Examples of metals or semiconductors that are preferable from the viewpoint of low toxicity include Sn,...
In, GCs sb, pb, ^1. .. Zn, Cu,
Ag.
静及びこれらを主成分とする合金が挙げられる。上記金
属もしくは半導体の特徴は、半導体レーザの発振波長域
での反射率が高い、融点が低い、毒性が低い、及び空気
中での安定性が高い等であるので、これら金属もしくは
半導体を主成分とする合金を用いる場合は、上記特徴が
失われないように注意する必要がある。Examples include static and alloys containing these as main components. The characteristics of the above metals or semiconductors include high reflectance in the oscillation wavelength range of semiconductor lasers, low melting point, low toxicity, and high stability in air, so these metals or semiconductors are the main components. When using such an alloy, care must be taken not to lose the above characteristics.
本発明の光記録媒体に於ける記録層に用いられる金属酸
化物は、化学的安定性にすぐれ、熱伝導率の低いもので
あることが必要で、好ましい例としては、Sn、 In
、 AI、Zr及びZnの酸化物が挙げられるが特にS
nまたはInの酸化物を用いると空気中での安定性がす
ぐれ、高感度且つ再生信号のSN比が高い記録媒体が得
られる。SnまたはInの酸化物の例としては化学式で
SnO2、InJj及び5nOz−x、Inx03−x
等の低酸化物や、Snl−Sn1−y、Ina−zNz
03等の5nOx、■nスOJに異種金属がドーピング
されたものが挙げられる。ここでX% Zは0.5以下
、yは0.25以下の正の数、MはSb、、In。The metal oxide used in the recording layer of the optical recording medium of the present invention must have excellent chemical stability and low thermal conductivity. Preferred examples include Sn and In.
, AI, Zr and Zn oxides, but especially S
When an oxide of n or In is used, a recording medium with excellent stability in air, high sensitivity, and a high signal-to-noise ratio of a reproduced signal can be obtained. Examples of Sn or In oxides include the chemical formulas SnO2, InJj, and 5nOz-x, Inx03-x.
low oxides such as Snl-Sn1-y, Ina-zNz
Examples include 5nOx such as 03, ■nS OJ doped with a different metal. Here, X% Z is 0.5 or less, y is a positive number of 0.25 or less, M is Sb, In.
NはSn、 Ge、、Pb、 Zn等の金属を示す。N represents a metal such as Sn, Ge, Pb, or Zn.
本発明の光記録媒体に於ける記録層は、上記金属もしく
は半導体の微粒子が上記金属酸化物薄膜中に分散した複
合層または、上記金属もしくは半導体のS膜と上記金属
酸化物薄膜との積層膜から構成されるが、特に記録層に
上記金属もしくは半導体の微粒子が上記金属酸化物薄膜
中に分散した複合層を用いた場合、高感度でSN比の高
い光記録媒体が得られる。該複合層に於ける金属もしく
は半導体微粒子の充填率は0.3以上、0.95以下で
あることが望ましい。The recording layer in the optical recording medium of the present invention is a composite layer in which fine particles of the metal or semiconductor are dispersed in the metal oxide thin film, or a laminated film of the S film of the metal or semiconductor and the metal oxide thin film. However, especially when a composite layer in which the metal or semiconductor fine particles are dispersed in the metal oxide thin film is used in the recording layer, an optical recording medium with high sensitivity and a high signal-to-noise ratio can be obtained. The filling rate of metal or semiconductor fine particles in the composite layer is preferably 0.3 or more and 0.95 or less.
充填率が0.3以下であると、複合層のレーザ光等のエ
ネルギー線の吸収係数が低下し、且つ複合層が溶融流動
化する温度も高くなり、得られる光記録媒体の記録感度
が低下する傾向が見られる。充Mt率が0,95以上と
なるき、複合層中に分散している金属もしくは半導体粒
子間の接触が始まり、金属もしくは半導体の粒子径が大
きくなり、そのため記録ビットの大きさ、形状が不揃い
になり、SN比が低下する傾向が見られ、また複合層の
熱伝導率も大きくなるため、記録感度が低下する傾向が
ある。本発明の光記録媒体に於て、記録層に上記の金属
もしくは半導体の微粒子が金属酸化物中に分散した複合
層を用いる場合は、感度及び記録部と未記録部のコント
ラストを高くする目的で金属、半導体及び酸化物の種類
が異なる複合層同士や、上記複合層と前記金属もしくは
半導体の薄膜を積層して記録層を形成させることもでき
る。If the filling factor is 0.3 or less, the absorption coefficient of the composite layer for energy rays such as laser light decreases, and the temperature at which the composite layer melts and fluidizes increases, resulting in a decrease in the recording sensitivity of the resulting optical recording medium. There is a tendency to When the filling Mt ratio becomes 0.95 or more, contact between metal or semiconductor particles dispersed in the composite layer begins, and the metal or semiconductor particle size increases, resulting in irregularities in the size and shape of recording bits. As a result, there is a tendency for the S/N ratio to decrease, and the thermal conductivity of the composite layer also increases, so that recording sensitivity tends to decrease. In the optical recording medium of the present invention, when a composite layer in which the above-mentioned metal or semiconductor fine particles are dispersed in a metal oxide is used for the recording layer, the purpose of increasing the sensitivity and the contrast between the recorded area and the unrecorded area is to The recording layer can also be formed by laminating composite layers of different types of metals, semiconductors, and oxides, or by laminating the composite layer and a thin film of the metal or semiconductor.
本発明の光記録媒体に於ては、記録層の厚さが50Å以
上、2000Å以下であることが望ましい。記録層の厚
さが2000Å以上になると記録層のエネルギー綿照射
部の体積が大きくなるため、エネルギー線を照射した場
合に吸収されるエネルギーの密度が低下するため、記録
媒体の記録感度が低下し、さらに形成されるビット周辺
の形状が乱れ易くなり、SN比を高くすることが難しい
。記??層の厚さが50Å以下であると記録媒体の記録
部と未ffa録部の反射率または透過率の差が小さくな
り、コントラストが低くなるため、SN比を高くするこ
とが離しい。本発明の光記録媒体を反射型光ディスクに
使用する場合、記録層のより好ましい厚さの範囲は10
0人以1二、1000Å以下である。In the optical recording medium of the present invention, the thickness of the recording layer is preferably 50 Å or more and 2000 Å or less. When the thickness of the recording layer is 2000 Å or more, the volume of the energy ray irradiated area of the recording layer increases, and the density of energy absorbed when irradiated with energy rays decreases, resulting in a decrease in the recording sensitivity of the recording medium. Furthermore, the shape around the formed bit tends to be disturbed, making it difficult to increase the S/N ratio. Record? ? If the layer thickness is 50 Å or less, the difference in reflectance or transmittance between the recorded portion and the unffa recorded portion of the recording medium will be small, resulting in a low contrast, making it difficult to increase the S/N ratio. When the optical recording medium of the present invention is used in a reflective optical disc, a more preferable thickness range of the recording layer is 10
It is 0 to 12 and 1000 Å or less.
本発明の光記録媒体の一つの実施態様は、基板上に有機
高分子量物層を設け、この有機高分子量物層に紫外線等
のエネルギー線を照射した後、この有機高分子量物層の
エネルギー線照射側表面に記録層を形成したものである
。基板としてはアルミニウム等の金属板、ガラス板、あ
るいはメチルメタクリレート系重合体、スチレン系重合
体、ポリ塩化ビニル、ポリカーボネート、ポリエチレン
テレフタレート、ポリブヂレンテレフタレー!・、ポリ
アミド及びエポキシ樹脂、ジアリルフタレート重合体、
ジエチレングリコールビスアリルカーボネート重合体、
ポリフェニレンサルファイド、ポリフェニレンオキサイ
ド、ポリイミド等の熱可塑性、又は熱硬化性樹脂のシー
ト又はフィルムが用いられる。特に基板にポリメチルメ
タクリレート、メチルメタクリレート及びこれと共重合
可能なビニル単量体との共重合物、ポリスチレン、また
はスチレン及びこれと共重合可能なビニル単量体との共
重合物等の有機高分子量物を用いた場合は、この基板の
表面に紫外線等のエネルギー線を照射した後、基板のエ
ネルギー線を照射した面上に記録層を形成させることに
より、他に有機高分子量物層を用いることな(、第2図
に示ず構造の木発I!11の光記録媒体が得られる。In one embodiment of the optical recording medium of the present invention, an organic polymer layer is provided on a substrate, and after irradiating the organic polymer layer with energy rays such as ultraviolet rays, the organic polymer layer is exposed to energy rays such as ultraviolet rays. A recording layer is formed on the irradiation side surface. The substrate can be a metal plate such as aluminum, a glass plate, methyl methacrylate polymer, styrene polymer, polyvinyl chloride, polycarbonate, polyethylene terephthalate, polybutylene terephthalate!・, polyamide and epoxy resin, diallyl phthalate polymer,
diethylene glycol bisallyl carbonate polymer,
A sheet or film of thermoplastic or thermosetting resin such as polyphenylene sulfide, polyphenylene oxide, polyimide, etc. is used. In particular, the substrate may contain organic polymers such as polymethyl methacrylate, a copolymer of methyl methacrylate and a vinyl monomer copolymerizable with it, polystyrene, or a copolymer of styrene and a vinyl monomer copolymerizable with it. When using a molecular weight material, after irradiating the surface of this substrate with energy rays such as ultraviolet rays, a recording layer is formed on the surface of the substrate that has been irradiated with energy rays, and an organic polymer layer is then used. An optical recording medium having a structure not shown in FIG. 2 is obtained.
さらに基板に上記の如く有機高分子量物を用いる場合は
、鋳型またはスタンパを用いてキャスト重合、圧縮成形
または射出成形を行うことにより、表面にプリグループ
を有する基板を製作し、ついで基板のこのプリグループ
が形成されている面上に紫外線等のエネルギー線を照射
後、この照射面上に記録層を形成させることにより、本
発明の光記録媒体が得られる。Furthermore, when using an organic high molecular weight material for the substrate as described above, a substrate having pre-groups on the surface is manufactured by performing cast polymerization, compression molding or injection molding using a mold or stamper, and then this pre-group of the substrate is used. The optical recording medium of the present invention can be obtained by irradiating the surface on which the groups are formed with energy rays such as ultraviolet rays and then forming a recording layer on the irradiated surface.
本発明の光記録媒体を記録光、再生光が基板を通して入
射する形式の光ディスクとして使用リーる場合に於゛C
は、基板にはガラス板、又はメチルメククリレ−1・系
重合体、スy−レン系重合体、ポリ塩化ビニル、ジェヂ
レングリコールビスアリルカーボネート重合体、エポキ
シ樹I+)?等の透明プラスチックのシートを用いる必
要がある。When the optical recording medium of the present invention is used as an optical disc in which recording light and reproduction light enter through a substrate,
The substrate is a glass plate, or a methylmeccrylate-1 polymer, a styrene polymer, polyvinyl chloride, a diethylene glycol bisallyl carbonate polymer, or an epoxy resin I+). It is necessary to use a transparent plastic sheet such as
以下に本発明の記録媒体の製造方法を層構成の別図を用
いて説明する。The method for manufacturing the recording medium of the present invention will be explained below with reference to another diagram of the layer structure.
第1図の構成の記録媒体は基板3の上に有機高分子量物
I−2をコートした後、図の上方から紫外線等のエネル
ギー線を照射し、このエネルギー線を照射した面4上に
記録層1を形成させることによって得られる。基板3に
有機高分子量物層2をコートするためには、有機高分子
量物を溶剤に溶解するか、エマルジョン化したものをス
ピンコード、ロールコートまたは浸漬塗布等の方法を用
いるか、物理蒸着、プラズマ重合等の方法を用いる。t
f機高分子量物層2をコーティングした後、この層にエ
ネルギー線を照射する。The recording medium having the structure shown in FIG. 1 coats a substrate 3 with an organic polymer I-2, then irradiates energy rays such as ultraviolet rays from above the figure, and records on the surface 4 irradiated with the energy rays. Obtained by forming layer 1. In order to coat the organic polymer layer 2 on the substrate 3, the organic polymer may be dissolved in a solvent or emulsified using methods such as spin cord, roll coating, or dip coating, physical vapor deposition, A method such as plasma polymerization is used. t
After coating the polymer layer 2, this layer is irradiated with energy rays.
具体的な例としては、エネルギー線源にクセノン−水銀
灯、クセノン灯、高圧水銀灯、超高圧水銀灯等を用い、
波長190〜420 nmの紫外線を] OmJ/ c
a以上照射する。紫外線強度は有機高分子量物層表面で
10 mll/ c+4以」二であることが望ましい。As a specific example, a xenon-mercury lamp, a xenon lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, etc. are used as the energy source,
Ultraviolet rays with a wavelength of 190 to 420 nm] OmJ/c
Irradiate more than a. The intensity of ultraviolet rays on the surface of the organic polymer layer is preferably 10 ml/c+4 or more.
上記の如くエネルギー線として紫外線を使用する場合は
、特に線源に300 nm以下の波長で分光出力の大き
いクセノン−水銀灯、高圧水銀灯等を用いると記録感度
、SN比のすぐれた光記録媒体が得られる。また−・般
に光重合開始剤及び感光剤と呼ばれている物質を有機高
分子量物層に添加すると、300 nm以下の波長で分
光出力の小さい線源を使用した場合でも記録感度、SN
比のすぐれた光記録媒体を得ることができる。ヒ記光重
舎開始剤及び感光剤の例としては、ベンゾインイソブチ
ルエーテル、ベンゾインイソプロピルエーテル等のベン
ゾインアルキルエーテルU11.2.2−ジメトキシ−
2、フヱニルアセトフェノン等のペンジルケタール類、
ジェトキシアセトフェノン等のアセトフェノン誘導体、
ベンゾフェノン、ベンジル、メチル−〇−ベンゾインベ
ンゾエート等のケトン類等が挙げられる。When using ultraviolet rays as the energy beam as described above, optical recording media with excellent recording sensitivity and signal-to-noise ratio can be obtained by using a xenon-mercury lamp, high-pressure mercury lamp, etc., which have a large spectral output at a wavelength of 300 nm or less as a radiation source. It will be done. In addition, when substances generally called photopolymerization initiators and photosensitizers are added to the organic polymer layer, the recording sensitivity and S/N can be improved even when using a radiation source with a small spectral output at a wavelength of 300 nm or less.
An optical recording medium with an excellent ratio can be obtained. Examples of Kojusha initiators and photosensitizers include benzoin alkyl ether U11.2.2-dimethoxy- such as benzoin isobutyl ether and benzoin isopropyl ether.
2. Penzyl ketals such as phenylacetophenone,
Acetophenone derivatives such as jetoxyacetophenone,
Examples include ketones such as benzophenone, benzyl, and methyl-0-benzoin benzoate.
紫外線の照射量は10 mJ/ cJ以上であれば良く
、特に上限はないが、基板にポリメチルメタクリレート
等の有機高分子量物を用いて第2図に示す構造の光記録
媒体を製造する場合は、紫外線の照射によって基板の機
械的強度の低下や熱による変形が生じないように注息す
る必要がある。この場合、特に線源にクセノン−水銀灯
、高圧水銀行を用いて、照射量を適切に選択することに
より、基板・の機械的強度の低下や変形を併うことなく
、高感度でSN比の高い記録媒体が得られる。The amount of ultraviolet rays irradiated should be 10 mJ/cJ or more, and there is no particular upper limit, but when manufacturing an optical recording medium with the structure shown in Figure 2 using an organic high molecular weight material such as polymethyl methacrylate for the substrate, Care must be taken to ensure that the mechanical strength of the substrate does not deteriorate or deform due to heat due to ultraviolet irradiation. In this case, by using a xenon-mercury lamp or a high-pressure water bank as the radiation source and selecting the irradiation amount appropriately, high sensitivity and high signal-to-noise ratio can be achieved without deterioration or deformation of the mechanical strength of the substrate. A high quality recording medium can be obtained.
本発明の元肥を矛媒体は上記の如く基板上に設けた有機
高分子量物層にエネルギー線を照射後、このエネルギー
線照射面上に記録層を形成させることによって得られる
。記録層を形成させるためには真空蒸着法、イオン化蒸
着法、イオンブレーティング法、クラスターイオンビー
ム蒸着法、スパッタ法等を利用する。記録層として、金
属もしくは半導体の微粒子が金属酸化物中に分散した複
合層を用いる場合は、金属もしくは半導体と金属酸化物
とを別々のルツボに入れ、I X 10” 龍11g以
下の真空度に於て同時に蒸発させ蒸着を行う。またイオ
ン化と同時に基板側に直流電圧を印加してイオン化粒子
を加速させるイオンブレーティング法を用いることもで
きる。また金属もしくは半導体のターゲットと金属酸化
物のターゲットを用いて同時スパッタを行うことによっ
て複合層を形成させることもできる。The starting material medium of the present invention is obtained by irradiating the organic polymer layer provided on the substrate with energy rays as described above, and then forming a recording layer on the surface irradiated with the energy rays. In order to form the recording layer, a vacuum deposition method, an ionization deposition method, an ion blating method, a cluster ion beam deposition method, a sputtering method, etc. are used. When using a composite layer in which metal or semiconductor fine particles are dispersed in a metal oxide as a recording layer, the metal or semiconductor and the metal oxide are placed in separate crucibles and placed in a vacuum of less than I x 10" x 11 g. At the same time, the ionized particles are evaporated and deposited.Also, an ion blating method can be used in which ionized particles are accelerated by applying a DC voltage to the substrate side at the same time as ionization.Also, a metal or semiconductor target and a metal oxide target can be used. A composite layer can also be formed by simultaneous sputtering.
いずれの場合も複合層の形成時には、金属もしくは半導
体及び金属酸化物の蒸着速度、スパッタリング速度を別
々に制御することにより、所定の金属もしくは半導体の
充填率及び厚さの複合層が得られる。金属もしくは半導
体の薄膜と金属酸化物の薄膜が交互に債層された記録層
を用いる場合は、複合層を形成させる場合と同様の手段
を用い、金属もしくは半導体と金属酸化物を交互に蒸着
もしくはスパッタすることにより記録層を形成さ一ロる
。In any case, when forming a composite layer, a composite layer with a predetermined metal or semiconductor filling rate and thickness can be obtained by separately controlling the vapor deposition rate and sputtering rate of the metal or semiconductor and metal oxide. When using a recording layer in which a thin film of a metal or semiconductor and a thin film of a metal oxide are alternately deposited, the metal or semiconductor and the metal oxide are alternately vapor-deposited or A recording layer is formed by sputtering.
本発明の光記録媒体に於ける記録層は、通常の環境下で
は極めて安定であり、特に保護層を設ける必要はないが
、機械的衝撃等に対する保護や、塵埃等の付着により記
録再生に支障が生じるのを防ぐことを目的として保護層
を記録層の上に設けることが可能である。保護層として
は、5i02、八1λOs 、Tool等の無機材料及
び有機高分子材料が用いられる。The recording layer in the optical recording medium of the present invention is extremely stable under normal environments, and there is no need to provide a special protective layer. It is possible to provide a protective layer on the recording layer for the purpose of preventing this from occurring. As the protective layer, inorganic materials and organic polymer materials such as 5i02, 81λOs, Tool, etc. are used.
第1図及び第2図に示す本発明の光記録媒体に於ては、
有機高分子量物層2及び基板3を透明なものとした場合
は、記録光及び再生光を図の上方から入射さ(ても下方
がら入射させても良い。In the optical recording medium of the present invention shown in FIGS. 1 and 2,
When the organic polymer layer 2 and the substrate 3 are transparent, the recording light and the reproducing light are incident from above (or may be made from below).
本発明の光記録媒体は低毒性で高感度であり、空気中で
の安定性がすぐれているのと同時にSN比が極めて高い
点に特徴がある。本発明の光記録媒体が上記の如くすぐ
れた特徴を示す理由は現時点では必ずしも明確でないが
、以下の様に推定することができる。The optical recording medium of the present invention is characterized by low toxicity, high sensitivity, excellent stability in air, and extremely high signal-to-noise ratio. Although the reason why the optical recording medium of the present invention exhibits the above-mentioned excellent characteristics is not necessarily clear at present, it can be estimated as follows.
本発明の光記録媒体に於けるイI機高分子量物層は、紫
り[線等のエネルギー線の照射を受けることにより、特
にエネルギー線の照射を受けた面近傍に於ては主鎖が切
断され、分子量が低下するため表面エネルギーが低くな
る。一方記録ピットの形成は、レーザ光等のエネルギー
線の照射により融解もしくは流動化した記録層の移動に
よって行われるが、本発明の光記録媒体に於ては、」二
記の如く記録層に接触する有機高分子量物層の表面エネ
ルギーが低いため、これと融解もしくは流動化した記m
Wとの表面エネルギーの差が大きくなり、融解もしくは
流動化した記録層の移動がスムーズに起るものと考えら
れる。In the optical recording medium of the present invention, when the high molecular weight material layer is irradiated with energy rays such as violet [rays], the main chain is damaged especially near the surface irradiated with the energy rays. It is cleaved and its molecular weight decreases, resulting in a lower surface energy. On the other hand, recording pits are formed by moving the recording layer that has been melted or fluidized by irradiation with energy rays such as laser light. Since the surface energy of the organic polymer layer is low, it is difficult to melt or fluidize the organic polymer layer.
It is thought that the difference in surface energy with W increases, and the melted or fluidized recording layer moves smoothly.
或いは、レーザ光により記録層を照射したとき、レーザ
光のエネルギーが有機高分子量物層のエネルギー線照射
により低分子量化された部分を融解する場合には、レー
ザ光照射によって融解もしくは流動化した記ti層とと
もに移動し、ビットを形成しやすい状態になることも考
えられる。Alternatively, when the recording layer is irradiated with a laser beam, if the energy of the laser beam melts a portion of the organic polymer layer whose molecular weight has been reduced by the energy ray irradiation, the recording layer that has been melted or fluidized by the laser beam irradiation may be It is also conceivable that the particles move together with the ti layer and become in a state where it is easy to form bits.
この結果、低い照射エネルギーで形状、大きさの揃った
ピットが形成されるため、高感度てSN比の高い光記録
媒体が得られる。また本発明の光記録媒体の記録層に使
用される金属もしくは半導体及び金属酸化物等は、いず
れも空気中及び水中で安定で且つ毒性も低いため本発明
の光記録媒体は、記録再生用光ディスクとして画像ファ
イル、文書ファイル、データファイル及びコンピュータ
の外部メモリとして用いられるばかりでなく、レーザ光
で直接記録再生が可能なテープ、カード、マイクロフィ
ッシュ等として用いることができる。As a result, pits with uniform shape and size are formed with low irradiation energy, so that an optical recording medium with high sensitivity and a high signal-to-noise ratio can be obtained. In addition, the metals, semiconductors, metal oxides, etc. used in the recording layer of the optical recording medium of the present invention are all stable in air and water, and have low toxicity. In addition to being used as image files, document files, data files, and external memory for computers, they can also be used as tapes, cards, microfiche, etc. that can be directly recorded and reproduced with laser light.
以下本発明のR’f’ 8411を実施例を用いて示す
が、本発明はこれ等の例に限定されるものではない。The R'f' 8411 of the present invention will be illustrated below using examples, but the present invention is not limited to these examples.
実施例1
厚さ1.2 i+m 、外径300mm、内径35龍の
ガラスのディスク状の基板上にスピンナーを用いてポリ
メチルメタクリレ−1・ (三菱レイヨン製アクリコン
)のメヂルエチルケトン溶液を塗布し、乾燥を行い厚さ
3μmのポリメチルメタクリレート層を形成した。得ら
れたポリメチルメタクリレート層を有する基板をランプ
出力80W/cmの高圧水銀灯を有する集光型照射装置
で450 nm以下の波長の光強度30 mll/ c
n!の領域をベルトコンベアを用いて通過させることに
より、ポリメチルメタクリレ−1・層に120 mJ/
cn+のエネルギーの紫外線を照射した。Example 1 A solution of polymethyl methacrylate-1 (Acricon, manufactured by Mitsubishi Rayon) in methyl ethyl ketone was applied onto a glass disc-shaped substrate with a thickness of 1.2 m+m, an outer diameter of 300 mm, and an inner diameter of 35 mm using a spinner. It was coated and dried to form a polymethyl methacrylate layer with a thickness of 3 μm. The obtained substrate having the polymethyl methacrylate layer was heated to a light intensity of 30 ml/c at a wavelength of 450 nm or less using a condensing irradiation device having a high-pressure mercury lamp with a lamp output of 80 W/cm.
n! By passing through the area using a belt conveyor, 120 mJ/
Ultraviolet light with energy of cn+ was irradiated.
」二記の如(して得られた紫り1線照射を受けたポリメ
チルメタクリレーI・層を有するガラス箔板を真空蒸着
装置のチャンバーに取りイ1け、基若装置の二つのルツ
ボにそれぞれSn(フルウチ化学製、20φX 10
ma t 、純度99. !l 9%)及び5nOx
(フルウチ化学製、18φx5m++t、t4度99.
99%〉を入れ、基板を20 rpmの速度で回転さ・
υながら、r【突崩2 X 101wm l1gに於て
、Sn及びSnOスにそれぞれ別の電子銃より電子線を
照射し、Sn及びSnO2の蒸発速度をa節しながら蒸
着を行い、ポリメチルメタクリレ−1・層の紫外線照射
面上に厚さ270人でSnの充填率が0.8のSn微粒
子が5nOzに分散した複合層からなる記録層を有する
第1図に示す構成の光記録媒体を製作した。Place the glass foil plate having the polymethyl methacrylate I layer, which has been irradiated with a single purple ray, into the chamber of a vacuum evaporation device as described in 2. Sn (manufactured by Furuuchi Chemical Co., Ltd., 20φX 10
mat, purity 99. ! l 9%) and 5nOx
(manufactured by Furuuchi Chemical, 18φx5m++t, t4 degree 99.
99%> and rotate the board at a speed of 20 rpm.
υ, Sn and SnO2 were irradiated with electron beams from separate electron guns at a temperature of 2 x 101wm l1g, and the evaporation rate of Sn and SnO2 was set at a node, and polymethyl methacrylate was deposited. An optical recording medium having the structure shown in Fig. 1, which has a recording layer consisting of a composite layer in which Sn fine particles with a thickness of 270 layers and a Sn filling rate of 0.8 are dispersed in a density of 5 nOz on the ultraviolet irradiated surface of the layer. was produced.
得られたディスク状光記録媒体を毎分1800回転速度
で回転させながら、くりかえし周波数5 Mllzで1
00nsecのパルス中に変調した半導体レーザ(日立
製作所製+1LP−1600、発振波長830 nm)
の発振光をコリメーターレンズ、集光レンズ及び基板を
通して記録層にビーム径1μmまで集光して照射するこ
とにより記録を行ったところ、短径がほぼ1μmのピン
トを形成させるのに必要なディスクの記録面」二に於け
るレーザ光強度は6畦であった。また記録された信号を
記録に用いたのと同様の半導体レーザを用いレーザ光強
度1mWで再生を行い、基準信号L) Mllz 、バ
ンドT’ll 30 K11zの条件でスペクトラムア
ナライザで測定したCN比は52dBであった。While rotating the obtained disk-shaped optical recording medium at a speed of 1800 revolutions per minute, the rotation frequency was 1.
Semiconductor laser modulated during 00nsec pulse (Hitachi +1LP-1600, oscillation wavelength 830nm)
When recording was performed by focusing and irradiating the oscillated light onto the recording layer to a beam diameter of 1 μm through a collimator lens, a condensing lens, and a substrate, it was found that the disk required to form a focus with a minor axis of approximately 1 μm The laser beam intensity on the recording surface "2" was 6 ridges. In addition, the recorded signal was reproduced using a semiconductor laser similar to that used for recording at a laser light intensity of 1 mW, and the CN ratio was measured with a spectrum analyzer under the conditions of a reference signal L) Mllz and a band T'll 30 K11z. It was 52dB.
比較例1
実施例1に用いたのと同様のガラスのディスク状括板を
真空蒸着装置のチャンバーに取り付け、基板回転速度2
0rpm 、真空度2 X 10” mm tlgに於
て電子ビーム蒸着法を用い、実施例1と同様にSn及び
SnO2を各々蒸着速度を調節しながらガラス基板の表
面」二に共蒸着を行い、厚さ260人でSnの充fI¥
tZaが0.8のSnがSnOλ中に分散した複合層を
ガラス基板上に形成させた試料を製作した。Comparative Example 1 A glass disc-shaped baffle plate similar to that used in Example 1 was attached to the chamber of a vacuum evaporation apparatus, and the substrate rotation speed was 2.
Using an electron beam evaporation method at 0 rpm and a vacuum level of 2 x 10" mm tlg, Sn and SnO2 were co-evaporated onto the surface of the glass substrate while adjusting the evaporation rate respectively in the same manner as in Example 1. Sn charge fee for 260 people is ¥
A sample was manufactured in which a composite layer in which Sn with a tZa of 0.8 was dispersed in SnOλ was formed on a glass substrate.
得られたディスク状試料について、実施例1と同様の方
法で、くりかえし周波数5MIIzで1.00nsec
のパルス中に変調した半導体レーザ光で記録することを
試みたがディスクの記録面上でのレーザ光強度12mW
でもピッi・を形成さモることができなかった。The obtained disk-shaped sample was subjected to a repeated treatment of 1.00 nsec at a frequency of 5 MIIz in the same manner as in Example 1.
I tried recording with a semiconductor laser beam modulated during the pulse, but the laser beam intensity on the recording surface of the disk was 12 mW.
But I couldn't form a pin.
以上に示す如く、ガラス基板上に5nlk粒子が5nO
z中に分散した複合層を直接形成させた試料は本発明の
光記録媒体に比較すると感度が著しく低いことが明らか
である。As shown above, 5nlk particles are 5nO on a glass substrate.
It is clear that the sample in which the composite layer dispersed in Z is directly formed has significantly lower sensitivity than the optical recording medium of the present invention.
比較例2
実施例1に用いたのと同様のガラスのディスク状ノ、I
−板」二に、実施例1と同様の方法で厚さ3μmのポリ
メチルメタクリレート層を設け、得られたポリメチルメ
タクリレ−1・層を有する基板を真空蒸着装置のチャン
バーに取り付け、実施例1と同様の条件でSnとSnO
2を共蒸着し、ポリメチルメタクリレート層上に厚さ2
70人で、Snの充填率が0.8のSnの微粒子が5n
(12中に分散した複合層が形成された試料を製作した
。Comparative Example 2 Glass disc-shaped glass similar to that used in Example 1, I
- A polymethyl methacrylate layer with a thickness of 3 μm was provided on the second plate in the same manner as in Example 1, and the substrate having the obtained polymethyl methacrylate layer was attached to the chamber of a vacuum evaporation apparatus. Sn and SnO under the same conditions as 1.
2 to a thickness of 2 on the polymethyl methacrylate layer.
70 people, 5n of Sn fine particles with a Sn filling rate of 0.8
(A sample was prepared in which a composite layer dispersed in 12 was formed.
得られたディスク状の試料について実施例1と同様の方
法で、くりかえし周波数5 Mllzで100nsec
のパルスl+に変調した半導体レーザ光で記録を行った
ところ、短径がほぼ1μmのビットを形成させるのに必
要なディスクの記録面」二に於けるレーザ光強度は12
m1l、また実施例1と同様に基準信号5 Mllz
、バンドTll 30 K11zの条件でスペクトラム
アナライザで測定したCN比は41dBであった。The obtained disk-shaped sample was subjected to the same method as in Example 1 at a repetition frequency of 5 Mllz for 100 nsec.
When recording was performed with a semiconductor laser beam modulated to a pulse l+ of
m1l, and as in Example 1, the reference signal 5 Mllz
, the CN ratio measured with a spectrum analyzer under the conditions of band Tll 30 K11z was 41 dB.
以上に示す如く、ガラ基板上に設けられたポリメチルメ
タクリレート層上に紫外線等のエネルギー線を照射する
ことなく、直接記録層を形成することにより得られた試
料は、本発明の光記録媒体に比較して記録感度が低(、
またCN比も低くなる。As shown above, a sample obtained by directly forming a recording layer on a polymethyl methacrylate layer provided on a glass substrate without irradiating energy rays such as ultraviolet rays can be used in the optical recording medium of the present invention. Recording sensitivity is low compared to
Furthermore, the CN ratio also becomes low.
実施例2
実施例1で用いたのと同様のディスク状ガラス皓板に、
実施例1と同様の方法を用いて、表1に示すjワさ3μ
mの有tl1M分子量物層を形成させ、次いでこの有t
iM高分子量物層に実施例1と同様の方法を用いて、1
20 mJ/ cnlのエネルギーの紫外線を照射した
。Example 2 A disk-shaped glass plate similar to that used in Example 1 was coated with
Using the same method as in Example 1, the j width shown in Table 1 was 3 μ.
Form a layer of a 1M molecular weight substance with a tl of m, and then
1 was applied to the iM polymer layer using the same method as in Example 1.
Ultraviolet light with an energy of 20 mJ/cnl was irradiated.
上記の如くして得られた紫外線■1射を受けた有機高分
子禁物層上に実施例1と同様の方法を用いて、表1に示
す金属の微粒子が同じく表1に示す金R酸化物中に分散
し、金属充填率0.’85、厚さ280人の複合層であ
る記録層が形成された光記録媒体を製作した。Using the same method as in Example 1, fine particles of the metals shown in Table 1 were applied to the organic polymer material layer which had been exposed to the ultraviolet rays 1 obtained as described above. The metal filling rate is 0. In 1985, an optical recording medium with a recording layer formed of a composite layer of 280 layers in thickness was manufactured.
得られたディスク状光記録媒体について実施例1と同様
の条件で記録再生を行った場合、短径がほぼ1μmのビ
ットを形成させるのに必要なディスクの記録面上に於け
るレーザ光強度、CN比を表1に示す。When recording and reproducing was performed on the obtained disc-shaped optical recording medium under the same conditions as in Example 1, the laser light intensity on the recording surface of the disc required to form a bit with a short axis of approximately 1 μm, Table 1 shows the CN ratio.
実施例3
厚さ1.2酊、外径300關、内径35顛のキャスト法
で製作したポリメチルメタクリレートからなるディスク
状のシートを5枚用意し、このうち4枚についてランプ
出力80W/cmの高圧水銀灯を有する竿先型照射装置
で450 nm以下の波長の光強度30mW/ctAの
領域をベルトコンベアを用いて、速度を変えて通過させ
ることにより、ポリメチルメタクリレートシーI・に表
2に示すエネルギーの紫外線を照射した。Example 3 Five disk-shaped sheets made of polymethyl methacrylate made by a casting method with a thickness of 1.2 mm, an outer diameter of 300 mm, and an inner diameter of 35 mm were prepared, and 4 of them were heated with a lamp output of 80 W/cm. By using a belt conveyor to pass through a region with a light intensity of 30 mW/ctA at a wavelength of 450 nm or less using a pole-tip irradiation device equipped with a high-pressure mercury lamp, the polymethyl methacrylate sheet I was produced as shown in Table 2. Irradiated with energy ultraviolet rays.
上記の如くして得られた、紫外線照射を受けた4枚のポ
リメチルメタクリレートシートを真空蒸着装置のチャン
バーに取り付け、実施例1と同様の方法を用いて、上記
ポリメチルメタクリレートシートの紫外線照射面上に厚
さ300人で、Snの充填率が0.85のSn微粒子が
SnOλ中に分散した複合層からなる記録層を有する第
2図に示す構成の光記録媒体を製作した。The four polymethyl methacrylate sheets obtained as described above and irradiated with ultraviolet rays were attached to the chamber of a vacuum evaporation apparatus, and the ultraviolet irradiated surface of the polymethyl methacrylate sheet was An optical recording medium having the structure shown in FIG. 2 was manufactured, having a recording layer having a thickness of 300 mm and consisting of a composite layer in which Sn fine particles with a Sn filling factor of 0.85 were dispersed in SnOλ.
得られたディスク状光記録媒体について、実施例1と同
様の条件で記録再生を行ったところ、短径がほぼ1μm
のビットを形成させるのに必要なディスクの記録面上に
於けるレーザ光強度、CN比を表2に示す。When recording and reproducing the obtained disc-shaped optical recording medium under the same conditions as in Example 1, the minor axis was approximately 1 μm.
Table 2 shows the laser light intensity and CN ratio on the recording surface of the disk necessary to form the bits.
尚比較のため、上記ポリメチルメタクリレートシートの
残りの1枚の表面上に、紫外線照射することなく、直接
」ニ記記録層を形成させた試料の記録再生特性を試料番
号3−5として表2に同時に示す。For comparison, the recording and reproducing characteristics of a sample in which a recording layer was directly formed on the surface of the remaining polymethyl methacrylate sheet without UV irradiation are shown in Table 2 as sample number 3-5. shown at the same time.
表 2
実施例4
実施例3で用いたのと同様のポリメチルメタクリレート
シート9枚を用意し、これ等シートに実施例3に於ける
のと同様の紫外線照射装置を用いて90 mJ/ cl
のエネルギーの紫外線を照射した。Table 2 Example 4 Nine polymethyl methacrylate sheets similar to those used in Example 3 were prepared, and these sheets were exposed to 90 mJ/cl using the same ultraviolet irradiation device as in Example 3.
irradiated with ultraviolet rays of energy.
上記の如(して得られた紫外線照射を受けたポリメチル
メタクリレートシートの紫外線照射面上に実施例1と同
様の方法を用いて表3に示す金属もしくは半導体の微粒
子が表3に示す金属酸化物中に分散し、金属もしくは半
導体の充填率および膜厚が同じく表3に示す値の複合層
からなる記録層を有する光記録媒体を製作した。Using the same method as in Example 1, fine particles of the metals or semiconductors shown in Table 3 were applied to the ultraviolet irradiated surface of the polymethyl methacrylate sheet that had been irradiated with the ultraviolet rays obtained as described above. An optical recording medium having a recording layer consisting of a composite layer having metal or semiconductor filling ratios and film thicknesses shown in Table 3 was manufactured.
得られたディスク状光記録媒体について実施例1と同様
の条件で記録再生を行った場合、短径がほぼ1μmのビ
ン!・を形成させるのに必要なディスクの記録面上に於
けるレーザ光強度、CN比を表3に示す。When recording and reproducing was performed on the obtained disc-shaped optical recording medium under the same conditions as in Example 1, a bottle with a minor axis of approximately 1 μm was obtained! Table 3 shows the laser light intensity and CN ratio on the recording surface of the disk necessary to form .
実施例5
実施例3で用いたのと同様のポリメチルメタクリレート
のシートに、実施例3に於けるのと同様の紫外線照射装
置を用いて90mJ/cnのエネルギーの紫外線を照射
した。Example 5 A sheet of polymethyl methacrylate similar to that used in Example 3 was irradiated with ultraviolet rays having an energy of 90 mJ/cn using the same ultraviolet irradiation device as in Example 3.
上記の如くして得られた紫外線照射を受けたポリメグ・
ルメタクリレートシートを直径200鮪のSnO工およ
びsbのターゲット(いずれもフルウチ化学製、純度9
9.9%)を装備したスパッタ装置のチャンバーに取り
付け、上記ポリメチルメタクリレートのシートを回転さ
せながら、このシートの紫外線照射面上にまず30人の
厚さのSbMを形成させ、ついでこのSbM上に20人
の厚さのSnOλを形成させる。この操作を5回くりか
えし、最後に30人の厚さのSbMを形成させることに
より、30人の厚さの5bFl 6 Jmと、sbmに
はさまれた20人の厚さの5層の5n02層よりなる積
M厚さ280人の記録層を有する光記録媒体を製作した
。The ultraviolet irradiated polymeg obtained as described above
methacrylate sheet with a diameter of 200 tuna SnO and SB targets (both made by Furuuchi Chemical, purity 9).
9.9%), and while rotating the polymethyl methacrylate sheet, a layer of SbM with a thickness of 30 mm was first formed on the ultraviolet irradiated surface of the sheet, and then a layer of SbM was formed on the SbM. Form a SnOλ with a thickness of 20 μm. By repeating this operation 5 times and finally forming SbM with a thickness of 30 people, 5bFl 6 Jm with a thickness of 30 people and 5 layers of 5n02 with a thickness of 20 people sandwiched between the SBM. An optical recording medium having a recording layer with a thickness of 280 layers was manufactured.
得られたディスク状光記録媒体について、実施例1と同
様の条件で記録再生を行ったところ、短径がほぼ1μm
のピットを形成させるのに必要なディスクの記録面」二
に於けるレーザ光強度10mLCN比48dBであった
。When recording and reproducing the obtained disc-shaped optical recording medium under the same conditions as in Example 1, the minor axis was approximately 1 μm.
The laser beam intensity at the recording surface of the disk required to form pits was 10 mL and the CN ratio was 48 dB.
実施例6
実施例3で用いたのと同様のポリメチルメタクリレート
のシートに実施例3に於けるのと同様の紫外線照射装置
を用いて、9 (l mJ/ crAのエネルギーの紫
外線を照射した。Example 6 A sheet of polymethyl methacrylate similar to that used in Example 3 was irradiated with ultraviolet rays having an energy of 9 (l mJ/crA) using the same ultraviolet irradiation device as in Example 3.
に記の如くして得られた紫外#fA F、fl射装置を
受けたポリメチルメタクリレートシートを真空前着装置
のチャンツマ−に取り付け、<、1装置の三つのルツボ
にそれぞれSn(フルウチ化学製、20φXIQimt
、純度99.99%) 、5nOx(フルウチ化学製、
18φX 5 m* t %純度99.99%)、Ge
(フルウチ化学製、30φX10v+t、純度99.9
99%)を入れ、このシートを3 Q rpmの速度で
回転させながら、真空度2 X 106mm11gの条
件に於て電子ビーム蒸着法を用い、ポリメチルメタクリ
レートシートの紫外線照射面上に、まずGeを40人の
厚さに蒸着し、次いでSn及びSnO2にそれぞれ別の
電子銃より電子線を照射し、Sn及びSnOユのa全速
度を調節しながら共蒸着を行うことにより、Snの充填
亭0.8で膜厚180人のSn微粒子が5nOz中に分
11セシた複合層をGe層上に形成し、最後にこの複合
層上に再び厚さ40人のGe層を形成することにより、
厚さ260人の記録層を有するディスク状の光記録媒体
を製作した。The polymethyl methacrylate sheet subjected to the ultraviolet #fA F irradiation device obtained as described above was attached to the Chanzmar of the vacuum pre-deposition device, and Sn (manufactured by Furuuchi Chemical Co., Ltd.) was placed in three crucibles of the device. , 20φXIQimt
, purity 99.99%), 5nOx (manufactured by Furuuchi Chemical,
18φX 5 m*t% purity 99.99%), Ge
(manufactured by Furuuchi Chemical, 30φX10v+t, purity 99.9
99%), and while rotating this sheet at a speed of 3 Q rpm, Ge was first applied to the ultraviolet irradiated surface of the polymethyl methacrylate sheet using an electron beam evaporation method under vacuum conditions of 2 x 106 mm and 11 g. By evaporating Sn and SnO2 to a thickness of 40 mm, then co-evaporating Sn and SnO2 by irradiating electron beams from separate electron guns and co-evaporating while adjusting the total rate of Sn and SnO2, Sn was filled with Sn. By forming a composite layer on the Ge layer with a film thickness of 180 nm Sn fine particles in 5 nOz for 11 minutes at .8, and finally forming a Ge layer with a thickness of 40 nm on this composite layer again.
A disk-shaped optical recording medium having a recording layer with a thickness of 260 layers was manufactured.
得られたディスク状の光記録媒体について実施例1と同
様の条件で記録再生を行ったところ、短径がほぼ1μm
のピントを形成さゼるのに必要なディスクの記録面上に
於けるレーザ光強度は6mIQ、CN比57dBの値が
得られた。When recording and reproducing the obtained disk-shaped optical recording medium under the same conditions as in Example 1, the minor axis was approximately 1 μm.
The laser beam intensity on the recording surface of the disk required to form a focal point was 6 mIQ, and the CN ratio was 57 dB.
また、上記実施例1乃至実施例6において記録済のディ
スク状光記録媒体を60℃、95%R11の恒温恒湿層
内に入れ、120口間の耐湿熱性試験を行ったところ、
CN J、l:に変化は認められなかった。In addition, when the disc-shaped optical recording medium recorded in Examples 1 to 6 was placed in a constant temperature and humidity layer at 60° C. and 95% R11, and a 120-port heat-and-moisture resistance test was conducted,
No change was observed in CN J, l:.
第1図及び第2図は本発明の元肥ti媒体の断面図であ
る。
各図に於て、1は記録層、2は有機高分子量物層、3は
基板、4は2のエネルギー線照射面を示す。1 and 2 are cross-sectional views of the starter ti medium of the present invention. In each figure, 1 is a recording layer, 2 is an organic polymer layer, 3 is a substrate, and 4 is an energy beam irradiated surface of 2.
Claims (1)
と、該有機高分子量物層のエネルギー綿照射面上GこH
lすられた金属もしくは半導体と金属酸化物からなる記
録層と力)ら成る光記録媒体。 2、有機高分子量物がポリメチルメタクリレート、メチ
ルメタクリレートを主成分とする共重合物或ム)lよボ
1ノスグレンまたはスチレンを主成分とする共重合物よ
りi巽Lfれた少なくとも一種である特許請求の範囲第
1項Gこ君己載のうし記録媒体。 3、金属または半導体が、Sn、、InXSb、、Pb
、八1、Zn、、CulAg、 Au、Geより選ばれ
た少なくとも一種である特i’r aN求の範囲第1項
に記載の光記録媒体。 4、金属酸化物がSn、 Ins八1へZr及びZnの
酸化物より351+ぼれた少なくとも一種である特許請
求の範囲第1項番こ出己載の光記録媒体。 5、記録層が金属酸化物の薄膜中に金属もしく【よ半導
イ本の微粒子が分散した複合層である特許請求の範囲第
1項番こ記載の光記録媒体。[Scope of Claims] 1. A layer of an organic polymer 5 molecular weight substance irradiated with an energy beam, and a G
An optical recording medium consisting of a recording layer made of a ground metal or semiconductor and a metal oxide; 2. A patent in which the organic polymer is at least one type of polymethyl methacrylate, a copolymer containing methyl methacrylate as a main component, or a copolymer containing styrene as a main component. Claim 1: A recording medium containing personal information. 3. The metal or semiconductor is Sn, InXSb, Pb
, 81, Zn, CulAg, Au, and Ge. 4. The optical recording medium according to claim 1, wherein the metal oxide is at least one of Sn, Ins81, Zr, and Zn oxides. 5. The optical recording medium according to claim 1, wherein the recording layer is a composite layer in which fine particles of metal or semiconductor are dispersed in a thin film of metal oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58101689A JPS59227488A (en) | 1983-06-09 | 1983-06-09 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58101689A JPS59227488A (en) | 1983-06-09 | 1983-06-09 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59227488A true JPS59227488A (en) | 1984-12-20 |
| JPH0376239B2 JPH0376239B2 (en) | 1991-12-04 |
Family
ID=14307302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58101689A Granted JPS59227488A (en) | 1983-06-09 | 1983-06-09 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59227488A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6241089A (en) * | 1985-08-19 | 1987-02-23 | Nec Corp | Optical recording material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS535623A (en) * | 1976-07-03 | 1978-01-19 | Gakken Co Ltd | Light source |
| JPS5318551A (en) * | 1976-08-02 | 1978-02-20 | Kao Corp | 4-homoprotoadamantane and its preparation |
| JPS5690439A (en) * | 1979-12-20 | 1981-07-22 | Sumitomo Chem Co Ltd | Material for reproducing optical signal records |
-
1983
- 1983-06-09 JP JP58101689A patent/JPS59227488A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS535623A (en) * | 1976-07-03 | 1978-01-19 | Gakken Co Ltd | Light source |
| JPS5318551A (en) * | 1976-08-02 | 1978-02-20 | Kao Corp | 4-homoprotoadamantane and its preparation |
| JPS5690439A (en) * | 1979-12-20 | 1981-07-22 | Sumitomo Chem Co Ltd | Material for reproducing optical signal records |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6241089A (en) * | 1985-08-19 | 1987-02-23 | Nec Corp | Optical recording material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0376239B2 (en) | 1991-12-04 |
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