JPH0377464U - - Google Patents
Info
- Publication number
- JPH0377464U JPH0377464U JP13744189U JP13744189U JPH0377464U JP H0377464 U JPH0377464 U JP H0377464U JP 13744189 U JP13744189 U JP 13744189U JP 13744189 U JP13744189 U JP 13744189U JP H0377464 U JPH0377464 U JP H0377464U
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- gate insulating
- insulating film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
第１図はこの考案の一実施例のゲート絶縁膜に
、酸化膜と窒化膜の２層膜を用いた高耐圧ＭＯＳ
ＩＣ高圧部Ｐチヤンネルトランジスタの要部断
面図である。第２図は、ゲート絶縁膜に酸化膜の
みを用いた従来のＭＯＳ ＩＣ高圧部Ｐチヤンネ
ルトランジスタの要部断面図である。
１……ＰＳＧ（層間絶縁膜）、２……ポリシリ
コンゲート、３……ゲート酸化膜、４……接合部
、５……フイールド酸化膜、６……Ｎ型エピ層、
７……ソース領域、８……ゲート電極、９……ド
レイン領域。
Figure 1 shows a high voltage MOS using a two-layer film of an oxide film and a nitride film as the gate insulating film of an embodiment of this invention.
FIG. 2 is a cross-sectional view of a main part of an IC high-voltage section P-channel transistor. FIG. 2 is a sectional view of a main part of a conventional MOS IC high voltage P channel transistor using only an oxide film as a gate insulating film. 1... PSG (interlayer insulating film), 2... Polysilicon gate, 3... Gate oxide film, 4... Junction, 5... Field oxide film, 6... N-type epi layer,
7... Source region, 8... Gate electrode, 9... Drain region.
Claims (1)
成したことを特徴とするＭＯＳ半導体装置。 A MOS semiconductor device characterized in that a gate insulating film is formed of a two-layer film of an oxide film and a nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13744189U JPH0377464U (en) | 1989-11-28 | 1989-11-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13744189U JPH0377464U (en) | 1989-11-28 | 1989-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0377464U true JPH0377464U (en) | 1991-08-05 |
Family
ID=31684597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13744189U Pending JPH0377464U (en) | 1989-11-28 | 1989-11-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0377464U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002170888A (en) * | 2000-11-30 | 2002-06-14 | Hitachi Ltd | Semiconductor integrated circuit device and method of manufacturing the same |
| JP2008258640A (en) * | 2008-05-07 | 2008-10-23 | Renesas Technology Corp | Semiconductor integrated circuit device |
-
1989
- 1989-11-28 JP JP13744189U patent/JPH0377464U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002170888A (en) * | 2000-11-30 | 2002-06-14 | Hitachi Ltd | Semiconductor integrated circuit device and method of manufacturing the same |
| JP2008258640A (en) * | 2008-05-07 | 2008-10-23 | Renesas Technology Corp | Semiconductor integrated circuit device |
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