JPH0378788B2 - - Google Patents
Info
- Publication number
- JPH0378788B2 JPH0378788B2 JP19131888A JP19131888A JPH0378788B2 JP H0378788 B2 JPH0378788 B2 JP H0378788B2 JP 19131888 A JP19131888 A JP 19131888A JP 19131888 A JP19131888 A JP 19131888A JP H0378788 B2 JPH0378788 B2 JP H0378788B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- gaas
- region
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19131888A JPS6453442A (en) | 1988-07-30 | 1988-07-30 | Gaas semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19131888A JPS6453442A (en) | 1988-07-30 | 1988-07-30 | Gaas semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6453442A JPS6453442A (en) | 1989-03-01 |
| JPH0378788B2 true JPH0378788B2 (cs) | 1991-12-16 |
Family
ID=16272562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19131888A Granted JPS6453442A (en) | 1988-07-30 | 1988-07-30 | Gaas semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6453442A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002076020A (ja) * | 2000-08-31 | 2002-03-15 | Sumitomo Electric Ind Ltd | 半導体装置 |
-
1988
- 1988-07-30 JP JP19131888A patent/JPS6453442A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6453442A (en) | 1989-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4506281A (en) | GaAs semiconductor device | |
| KR940005454B1 (ko) | 화합물반도체장치 | |
| US5371401A (en) | Semiconductor integrated circuit fully isolated from the substrate | |
| JP2663679B2 (ja) | 伝導度変調型mosfet | |
| JPH01205564A (ja) | 光半導体装置およびその製造方法 | |
| KR100334381B1 (ko) | 유도성부하소자용집적드라이버회로 | |
| US5654226A (en) | Wafer bonding for power devices | |
| EP0103138A2 (en) | Semiconductor rectifier diode | |
| EP0043007B1 (en) | Saturation-limited bipolar transistor circuit structure and method of making | |
| JPH023266A (ja) | 導電性再結合層を有するバイポーラ半導体デバイス | |
| JP2000058819A (ja) | 電力用半導体装置 | |
| DK157468B (da) | Diode til monolitisk integreret kreds | |
| CN1220275C (zh) | 平面双端开关 | |
| JP3072753B2 (ja) | 半導体装置及び製造方法 | |
| JPH0378788B2 (cs) | ||
| US5872391A (en) | Bipolar junction transistors having an increased safe operating area | |
| KR100235994B1 (ko) | 발광 다이오드 및 그 제조방법 | |
| US5212396A (en) | Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations | |
| JPH07254731A (ja) | 発光素子 | |
| KR102783636B1 (ko) | SiC 쇼트키 다이오드 소자 및 그 제조 방법 | |
| JPH09223791A (ja) | 半導体装置 | |
| JPH0613654A (ja) | 半導体発光素子及びその製造方法 | |
| NL8702671A (nl) | Laterale hoogspanningstransistor. | |
| JP3240827B2 (ja) | ダイオード | |
| KR0169384B1 (ko) | 쇼트키다이오드를 이용한 수평형트랜지스터 및 그 제조방법 |