JPH038038B2 - - Google Patents

Info

Publication number
JPH038038B2
JPH038038B2 JP55159269A JP15926980A JPH038038B2 JP H038038 B2 JPH038038 B2 JP H038038B2 JP 55159269 A JP55159269 A JP 55159269A JP 15926980 A JP15926980 A JP 15926980A JP H038038 B2 JPH038038 B2 JP H038038B2
Authority
JP
Japan
Prior art keywords
transistors
threshold voltage
word line
read
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55159269A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5782289A (en
Inventor
Satoshi Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55159269A priority Critical patent/JPS5782289A/ja
Publication of JPS5782289A publication Critical patent/JPS5782289A/ja
Publication of JPH038038B2 publication Critical patent/JPH038038B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP55159269A 1980-11-12 1980-11-12 Semiconductor storage device Granted JPS5782289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55159269A JPS5782289A (en) 1980-11-12 1980-11-12 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55159269A JPS5782289A (en) 1980-11-12 1980-11-12 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5782289A JPS5782289A (en) 1982-05-22
JPH038038B2 true JPH038038B2 (de) 1991-02-05

Family

ID=15690074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55159269A Granted JPS5782289A (en) 1980-11-12 1980-11-12 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5782289A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108093A (ja) * 1981-12-21 1983-06-28 Nippon Telegr & Teleph Corp <Ntt> メモリセル

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649395B2 (de) * 1973-12-26 1981-11-21
JPS5429553A (en) * 1977-08-10 1979-03-05 Hitachi Ltd Mis type semiconductor integrated circuit device
JPS5460873A (en) * 1977-10-24 1979-05-16 Nec Corp Semiconductor integrated circuit device
JPS5548894A (en) * 1978-09-29 1980-04-08 Nec Corp Memory circuit

Also Published As

Publication number Publication date
JPS5782289A (en) 1982-05-22

Similar Documents

Publication Publication Date Title
EP0166540A2 (de) Halbleiterspeicheranordnung
US4535255A (en) Positive feedback amplifier circuitry
JPS6146977B2 (de)
KR890003373B1 (ko) 씨모오스 반도체 메모리 장치의 입출력 회로
JPH02185793A (ja) 半導体記憶装置
US4467456A (en) Memory circuit
US4792927A (en) Semiconductor memory device with bit line sense amplifiers
EP0262531B1 (de) Halbleiterspeicheranordnung mit einer Datenbus-Rücksetzungsschaltung
JPH038038B2 (de)
JPS6394499A (ja) 半導体記憶装置
US4931992A (en) Semiconductor memory having barrier transistors connected between sense and restore circuits
EP0061271A1 (de) Dynamische MOS-Speicheranordnung
US5079745A (en) Sense amplifier capable of high speed operation
JPH0660665A (ja) 半導体スタティックramのビット線負荷回路
JPS63281295A (ja) ダイナミツクram
JPS5856194B2 (ja) 半導体記憶装置
JPS6131554B2 (de)
JPH02154393A (ja) 半導体記憶回路
JPS6218999B2 (de)
JPH0146956B2 (de)
JPH0415558B2 (de)
EP0090591A2 (de) Halbleiter-Speichervorrichtung
JPH06203570A (ja) 半導体記憶装置
JPH06150656A (ja) 半導体記憶装置
JPH05210968A (ja) データ伝送回路