JPH0382001A - Magneto-optic thin-film and manufacture thereof - Google Patents
Magneto-optic thin-film and manufacture thereofInfo
- Publication number
- JPH0382001A JPH0382001A JP21833889A JP21833889A JPH0382001A JP H0382001 A JPH0382001 A JP H0382001A JP 21833889 A JP21833889 A JP 21833889A JP 21833889 A JP21833889 A JP 21833889A JP H0382001 A JPH0382001 A JP H0382001A
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- optical
- substrate
- sputtering
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
- H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Thin Magnetic Films (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（発明の産業上利用分野）
本発明は、磁気光学薄膜およびその製造方法、さらに詳
細には光に対するファラデー回転性能指数が大きく、形
成が容易な磁気光学薄膜およびその製造方法に関するも
のである。Detailed Description of the Invention (Industrial Application Field of the Invention) The present invention relates to a magneto-optic thin film and a method for manufacturing the same, and more particularly, a magneto-optic thin film that has a large Faraday rotation figure of merit with respect to light and is easy to form, and a method for manufacturing the same. It is about the method.
（従来の技術および問題点）
光アイソレータあるいは光サーキュレータなどの非相反
性を有する光素子の構成には、非相反効果を得るため、
磁気光学効果の一種である光のファラデー回転が利用さ
れ、磁気光学材料としては従来、イツトリウム鉄ガーネ
ット
（Ｙ３Ｆｅ５０ｘ２、以下ＹＩＧ）の単結晶が多（用い
られてきた。これらの、素子の小型化・高性能化のため
には、単位長当たりのファラデー回転角、すなわちファ
ラデ一定数０Ｆが大きく、かつ、光の伝搬損失が小さい
磁気光学材料が必要であり、このため、ＹＩＧのイツト
リウムをビスマスで置き換えた、いわゆる、ビスマス置
換鉄ガーネット（化学式ＢｉｘＹ３−ｘＦｅ５０１２）
が開発されている。(Prior art and problems) In order to obtain a non-reciprocal effect, the configuration of an optical element having non-reciprocity, such as an optical isolator or an optical circulator, requires
Faraday rotation of light, which is a type of magneto-optic effect, is utilized, and single crystals of yttrium iron garnet (Y3Fe50x2, hereinafter referred to as YIG) have traditionally been used as magneto-optic materials. In order to achieve high performance, a magneto-optical material with a large Faraday rotation angle per unit length, that is, a Faraday constant 0F, and a small optical propagation loss is required. For this reason, YIG's yttrium was replaced with bismuth. Also, so-called bismuth-substituted iron garnet (chemical formula BixY3-xFe5012)
is being developed.
また、最近では、光素子の集積回路化を目標として、磁
気光学材料の薄膜化の要請が高まってきた。Furthermore, recently, there has been an increasing demand for thinner magneto-optic materials with the aim of integrating optical devices into integrated circuits.
磁気光学材料に要求される特性としては、■ファラデ一
定数ｅｐが大きく、■伝搬損失が小さいこと、が特に重
要であり、前述のビスマス置換鉄ガーネットを始め、各
種材料の薄膜化が試みられている。Among the properties required for magneto-optical materials, it is particularly important to have a large Faraday constant ep and a small propagation loss. There is.
本発明は上述の問題点に鑑みなされたものであり、高性
能磁気光学薄膜およびその製造方法を提供することを目
的とする。The present invention was made in view of the above-mentioned problems, and an object of the present invention is to provide a high-performance magneto-optic thin film and a method for manufacturing the same.
（問題点を解決するための手段）
上記問題点を解決するため、本発明による磁気光学薄膜
は、Ｘを０．５から１．５の値として、化学式ＣｅｘＧ
ｄ３−ｘＦｅ５０１２の組成を有し、光学基板上にスパ
ッタリング形成したことを特徴とする。(Means for Solving the Problems) In order to solve the above problems, the magneto-optical thin film according to the present invention has the chemical formula CexG
It has a composition of d3-xFe5012 and is characterized by being formed on an optical substrate by sputtering.
また本発明による磁気光学薄膜の製造方法は、Ｘを０．
５から１．５の値として、化学式ＣｅｘＧｄ３−ｘＦｅ
５０１２の組成を有する焼結体をターゲット材料に用い
、形成時の基板温度を５２０℃から５４０℃の間とし、
不活性ガス雰囲気にてスパッタリングすることにより基
板上に堆積した後、６５０℃ないし８５０℃の間の温度
で熱処理を施すことを特徴とする。Further, in the method for manufacturing a magneto-optic thin film according to the present invention, X is set to 0.
As a value of 5 to 1.5, the chemical formula CexGd3-xFe
A sintered body having a composition of 5012 is used as a target material, the substrate temperature during formation is between 520 ° C. and 540 ° C.,
It is characterized in that it is deposited on a substrate by sputtering in an inert gas atmosphere and then heat-treated at a temperature between 650°C and 850°C.
本発明は、イツトリウム鉄ガーネットのイツトリウムを
セリウムとガドリニウムとで置換することを特徴とし、
いわゆる長波長帯、特に光通信技術において重要な波長
１．５μｍ帯の光に対してファラデ一定数が大きく伝搬
損失が小さい、高性能な磁気光学膜を実現するものであ
る。The present invention is characterized in that yttrium in yttrium iron garnet is replaced with cerium and gadolinium,
The present invention is intended to realize a high-performance magneto-optical film that has a large Faraday constant and small propagation loss for light in the so-called long wavelength band, particularly in the 1.5 μm wavelength band, which is important in optical communication technology.
本発明においては、ＣｅｘＧｄ３−ｘＦｅ５０１２の組
成を有する焼結体をターゲット材料に用い、基板上に基
板温度５２０℃から５４０℃で、不活性ガス雰囲気中に
てスパッタリングすることにより堆積させる。In the present invention, a sintered body having a composition of CexGd3-xFe5012 is used as a target material, and is deposited on a substrate by sputtering in an inert gas atmosphere at a substrate temperature of 520°C to 540°C.
前記焼結体において、Ｘは０．５〜１．５である。０．
５未満であると、大きなファラデ一定数が得られにくく
、一方、１．５を超えると結晶膜の形成が困難になるか
らである。In the sintered body, X is 0.5 to 1.5. 0.
If it is less than 5, it will be difficult to obtain a large Faraday constant, while if it exceeds 1.5, it will be difficult to form a crystalline film.
前記堆積時における基板温度は５２０〜５４０℃である
。後述の実施例より明らかなように、５２０℃未満であ
ると、スパッタリング形成時に結晶化が十分に進まず、
５４０℃を超えると形成膜に粒界ができる傾向があるか
らである。The substrate temperature during the deposition is 520 to 540°C. As is clear from the examples described below, if the temperature is lower than 520°C, crystallization will not proceed sufficiently during sputtering formation.
This is because if the temperature exceeds 540° C., grain boundaries tend to form in the formed film.
このような基板上への堆積は不活性ガス雰囲気、例えば
アルゴンガス雰囲気で行なうことができる。Such deposition onto a substrate can be carried out in an inert gas atmosphere, for example an argon gas atmosphere.
上述のように光学薄膜を形成した後、本発明において４
１６５０℃から８５０℃の温度で熱処理を行なう、上記
熱処理の温度が６５０℃未満であると、ファラデ一定数
が大きくならず、伝送損失が大きくなる恐れがあり、一
方８５０℃を超えると結晶状態が変化してしまう恐れが
あるからである。After forming the optical thin film as described above, in the present invention, 4
Heat treatment is carried out at a temperature between 1650°C and 850°C. If the temperature of the above heat treatment is less than 650°C, the Faraday constant will not become large and transmission loss may become large. On the other hand, if it exceeds 850°C, the crystalline state will deteriorate. This is because there is a risk that it may change.
この熱処理を行なう雰囲気としては、非酸化性雰囲気、
例えばアルゴン、窒素ガスなどの雰囲気、還元性雰囲気
中で行なうことができる。The atmosphere for this heat treatment is a non-oxidizing atmosphere,
For example, it can be carried out in an atmosphere of argon, nitrogen gas, etc., or a reducing atmosphere.
（実施例〉
第１図は、本発明によるＣｅＧｄ２Ｆｅ５Ｏ１２の化学
組成を持つセリウム・ガドリニウム置換鉄ガーネットの
磁気光学膜の特性例である。横軸は光の波長、縦軸は長
さ１ｃｍ当たりのファラデー回転角、すなわち、ファラ
デ一定数ｅｐであり、破線は後述の方法によるスパッタ
形成後の試料、実線は熱処理を施した試料に対応する。(Example) Figure 1 shows an example of the characteristics of a magneto-optical film of cerium-gadolinium-substituted iron garnet having a chemical composition of CeGd2Fe5O12 according to the present invention.The horizontal axis is the wavelength of light, and the vertical axis is the faraday per cm length. The rotation angle is the Faraday constant ep, and the broken line corresponds to the sample after sputter formation by the method described below, and the solid line corresponds to the sample after heat treatment.
ここでｅｐ符号は、右回りの回転を正とした０図のよう
に、波長１μｍ前後を境として、短波長側と長波長側と
ではｅｐの符号が逆転している。長波長側では波長とと
もにｅｐが漸減の傾向にはあるものの、１．５５μｍの
波長において３，２００ｄｅｇ／ｃｍ以上の値を有し、
代表的なビスマス置換イツトリウム鉄ガーネットである
ＢｉＹ２Ｆｅ５０ｔ２の値１，２００ｄｅｇ／ｃｍに比
べて２．５倍以上である。Here, as shown in the 0 diagram in which clockwise rotation is positive, the sign of ep is reversed between the short wavelength side and the long wavelength side, with the wavelength of around 1 μm as the boundary. Although ep tends to gradually decrease with wavelength on the long wavelength side, it has a value of 3,200 deg/cm or more at a wavelength of 1.55 μm,
This is more than 2.5 times the value of BiY2Fe50t2, which is a typical bismuth-substituted yttrium iron garnet, which is 1,200 deg/cm.
第２図は、セリウムとガドリニウムの組成比とファラデ
一定数の絶対値の関係を示す、ここで、横軸は、セリウ
ム・ガドリニウム置換鉄ガーネットの化学式をＣｅＧｄ
２Ｆｅ５Ｏ１２と表した場合のＸの値、縦軸はファラデ
一定数ｅｐの絶対値で、波長は１゜５５μｍの場合であ
る。Ｘが０．５において１，５００ ｄ ｅ ｇ／ｃｍ
以上のファラデ一定数値が得られ、かつ、セリウム置換
量に比例して増大する。これに対し、Ｘが０．５以下で
はセリウム置換の効果は小さい、なお、Ｘが１．５以上
になると結晶膜の形成が極めて困難である。Figure 2 shows the relationship between the composition ratio of cerium and gadolinium and the absolute value of the Faraday constant.
The value of X when expressed as 2Fe5O12, the vertical axis is the absolute value of the Faraday constant ep, and the wavelength is 1°55 μm. 1,500 de g/cm when X is 0.5
The above Farade constant value is obtained, and increases in proportion to the amount of cerium substitution. On the other hand, when X is 0.5 or less, the effect of cerium substitution is small, and when X is 1.5 or more, it is extremely difficult to form a crystal film.
次に、本実施例における磁気光学膜の形成方法について
説明する。本発明の磁気光学膜はスパッタリング法によ
って容易に形成するこヒが可能である。スパッタリング
におけるターゲット材料としては、目的とする膜の化学
組成とほぼ同一の組成を有する焼結体を用い、λバッタ
リング法εしては、高周波スパッタリングなど、一般的
な方法で形成可能であった。スッパリングのガス雰囲気
にはアルゴンガスを用い、形成基板には、ガドリニウム
・ガリウム・ガーネット（ＧＧＧ）あるいは、ニオジウ
ム・ガリウム・ガーネット（ＮＧＯ）などのガーネット
結晶の（ｌｌ’ｌ）基板を用いた。Next, a method for forming the magneto-optic film in this example will be explained. The magneto-optical film of the present invention can be easily formed by sputtering. As the target material for sputtering, a sintered body with almost the same chemical composition as the target film was used, and the λ battering method ε could be formed using general methods such as high-frequency sputtering. . Argon gas was used as the gas atmosphere for sputtering, and a garnet crystal (ll'l) substrate such as gadolinium gallium garnet (GGG) or nidium gallium garnet (NGO) was used as the formation substrate.
磁気光学特性を得るためには、基板上にエピタキシャル
成長するこεが必要であるが、発明者らはスパッタリン
グ時の基板温度εして５２０〜５４０℃の範囲で磁気光
学特性を示す膜が得られることを見出した。In order to obtain magneto-optical properties, it is necessary to grow epitaxially on a substrate, but the inventors have found that a film exhibiting magneto-optical properties can be obtained at a substrate temperature of 520 to 540°C during sputtering. I discovered that.
光伝搬特性のうち伝搬損失は、形成したままの状態、す
なわち、アズグロウンの状態では１００ｄＢ／ｃｍ、以
上らあり、導波路として使用できないが、６５０ないし
８５０℃の高温で非酸化性の雰囲気にて熱処理を施すこ
εにより著しく減少し、波長１．５５．ｕｍの光に対し
２５ ｄ Ｂ ／ｃｍ以下となることがわかった。一方
、ファラデ一定数は、第１図に示すようにアズグロウン
の状態でも十分な値を有し、熱処理による改善の効果は
認められず、むしろ低下する傾向があるが、その低下量
はわずかであるので、ファラデ一定数と単位長あたりの
伝搬損失の比、すなわち性能指数は熱処理により大幅に
向上する。Among the optical propagation characteristics, the propagation loss is more than 100 dB/cm in the as-grown state, so it cannot be used as a waveguide, but it can be used at a high temperature of 650 to 850 °C in a non-oxidizing atmosphere. After heat treatment, the wavelength decreases significantly due to ε, and the wavelength decreases to 1.55. It was found that the value is 25 dB/cm or less for um light. On the other hand, as shown in Figure 1, the Faraday constant has a sufficient value even in the as-grown state, and there is no improvement effect due to heat treatment, and there is a tendency to decrease, but the amount of decrease is small. Therefore, the ratio of the Faraday constant to the propagation loss per unit length, that is, the figure of merit, is significantly improved by heat treatment.
表に、本発明による磁気光学薄膜の代表的な特性例を示
す。The table shows typical characteristics of the magneto-optic thin film according to the present invention.
薄膜の作製は高周波２極スパツタリングによって行ない
、熱処理温度は８００℃である０表に示すように、本発
明に主る磁気光学薄膜は、波長１．５５μｍ付近の長波
長帯において１３０ｄ ｅ ｇ ／ ｄ ８以上の磁気
光学性能指数を実現でき、ファラデ一定数も極めて大き
い。The thin film was fabricated by high-frequency bipolar sputtering, and the heat treatment temperature was 800°C.As shown in Table 0, the magneto-optical thin film mainly used in the present invention has a crystallinity of 130 d e g / d in the long wavelength band around 1.55 μm. A magneto-optical figure of merit of 8 or more can be achieved, and the Faraday constant is extremely large.
（以下余白〉
波長は１゜
５５μｍ
〈発明の効果〉
以上説明したように、本発明による磁気光学薄膜は、高
周波２極スパツタリングのように、簡便な方法で成膜可
能であり、かつ、波長１．５μｍ付近の長波長帯の光に
対して極めて大きなファラデ一定数と高い磁気光学性能
指数得ることができるから、高性能な非相反光デバイス
に応用できる。(The following is a blank space) The wavelength is 1°55 μm. <Effects of the Invention> As explained above, the magneto-optic thin film according to the present invention can be formed by a simple method such as high-frequency bipolar sputtering, and the wavelength is 1°55 μm. Since it is possible to obtain an extremely large Faraday constant and a high magneto-optical figure of merit for light in a long wavelength band around .5 μm, it can be applied to high-performance non-reciprocal optical devices.
第１図は本発明による磁気光学薄膜のファラデー回転角
の波長依存性を示す図、第２図はセリウム置換量とファ
ラデ一定数の関係を示す図である。FIG. 1 is a diagram showing the wavelength dependence of the Faraday rotation angle of the magneto-optic thin film according to the present invention, and FIG. 2 is a diagram showing the relationship between the amount of cerium substitution and the Faraday constant.
Claims (2)
ｘＧｄ＿３＿−＿ｘＦｅ＿５Ｏ＿１＿２の組成を有し、
光学基板上にスパッタリング形成したことを特徴とする
磁気光学薄膜。(1) When x is a value from 0.5 to 1.5, the chemical formula Ce_
It has a composition of xGd_3_−_xFe_5O_1_2,
A magneto-optical thin film characterized by being formed by sputtering on an optical substrate.
ｘＧｄ＿３＿−＿ｘＦｅ＿５Ｏ＿１＿２の組成を有する
焼結体をターゲット材料に用い、形成時の基板温度を５
２０℃から５４０℃の間とし、不活性ガス雰囲気にてス
パッタリングすることにより基板上に堆積した後、６５
０℃ないし８５０℃の間の温度で熱処理を施すことを特
徴とする磁気光学薄膜の製造方法。(2) When x is a value from 0.5 to 1.5, the chemical formula Ce_
A sintered body having a composition of xGd_3_-_xFe_5O_1_2 was used as the target material, and the substrate temperature during formation was 5.
After depositing on the substrate by sputtering in an inert gas atmosphere at a temperature between 20°C and 540°C,
1. A method for producing a magneto-optical thin film, the method comprising performing heat treatment at a temperature between 0°C and 850°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1218338A JP2742537B2 (en) | 1989-08-24 | 1989-08-24 | Magneto-optical thin film and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1218338A JP2742537B2 (en) | 1989-08-24 | 1989-08-24 | Magneto-optical thin film and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0382001A true JPH0382001A (en) | 1991-04-08 |
| JP2742537B2 JP2742537B2 (en) | 1998-04-22 |
Family
ID=16718301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1218338A Expired - Fee Related JP2742537B2 (en) | 1989-08-24 | 1989-08-24 | Magneto-optical thin film and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2742537B2 (en) |
-
1989
- 1989-08-24 JP JP1218338A patent/JP2742537B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2742537B2 (en) | 1998-04-22 |
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