JPH038534B2 - - Google Patents
Info
- Publication number
- JPH038534B2 JPH038534B2 JP56078584A JP7858481A JPH038534B2 JP H038534 B2 JPH038534 B2 JP H038534B2 JP 56078584 A JP56078584 A JP 56078584A JP 7858481 A JP7858481 A JP 7858481A JP H038534 B2 JPH038534 B2 JP H038534B2
- Authority
- JP
- Japan
- Prior art keywords
- recording
- metal complexes
- absorption
- visible light
- bis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Optical Recording Or Reproduction (AREA)
Description
【発明の詳細な説明】
本発明は、可視光線又は近赤外線吸収能を有す
る物質を用いた新規な記録及び記録の読みだし方
法、及び記録物に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel record using a substance capable of absorbing visible light or near infrared rays, a method for reading the record, and a record.
近年、画像、音声を始めとする情報の記録及び
再生を高速度に又高密度にしかも簡便に行うこと
がますます強く要望されており、各種の方法と伴
う記録物が提案され又一部実用化されている。 In recent years, there has been an increasing demand for recording and reproducing information such as images and audio at high speed, high density, and easily, and various methods and accompanying recordings have been proposed, and some of them have not yet been put into practical use. has been made into
その中で、レーザー光を記録信号の読みとりに
用いる代表的には、いわゆる光デイスクは、極め
て高密度に情報を記録することが出来、又、媒体
の任意の場所から記録された所望の情報を読みだ
すことが出来ることから広く実用化されることが
期待されている。 Among these, so-called optical disks, which use laser light to read recorded signals, can record information at an extremely high density, and can also record desired information recorded from any location on the medium. Since it can be read out, it is expected that it will be widely put into practical use.
従来の光デイスクの典型的な記録及び読みだし
のシステムは、光透過性のプラスチツクの表面に
微細なピツトを形成することによつて情報の記録
を行い、微細なビツト形成面に金属蒸着等によつ
て反射層をもうけ、これに一般的には反対側の面
からレーザー光のスポツトビームをあてて、ピツ
トエツジ部での光の回折による反射光量の変化を
フオトダイオード等によつて検出し又電気信号に
変換して記録の読みだしを行う方法である。 A typical recording and reading system for conventional optical discs records information by forming fine pits on the surface of light-transmissive plastic, and then deposits metal or other material on the surface where the fine bits are formed. Therefore, a reflective layer is formed, and a spot beam of laser light is generally applied to this from the opposite surface, and changes in the amount of reflected light due to diffraction at the pit edge are detected using a photodiode or the like. This is a method of converting it into a signal and reading out the record.
しかし、この方法では、1μ以下の極めて微細
な物理的形状即ちビツトを射出成型や加圧成型等
の物理的方法によつて形成するので個々の情報に
対応した数の型を要する等繁雑であると共に、正
確な記録を工業的規模で行うには、記録精度及び
生産性に難点があり、大幅な技術改良が望まれて
いる。 However, in this method, extremely fine physical shapes of 1μ or less, that is, bits, are formed by physical methods such as injection molding and pressure molding, so it is complicated and requires a number of molds corresponding to each piece of information. At the same time, in order to perform accurate recording on an industrial scale, there are difficulties in recording accuracy and productivity, and significant technical improvements are desired.
本発明は、従来の光デイスクの特徴である、記
録の高密度性、記録の読みだしの容易性を犠性に
することなく、又従来の光デイスクの上記した情
報記録方法の繁雑性又低い生産性を一挙に回避す
る新規な記録及び記録の読みだし方法及び記録物
を提供する。 The present invention has been achieved without sacrificing the high density of recording and ease of reading out the recording, which are the characteristics of conventional optical discs, and without sacrificing the above-mentioned information recording method of conventional optical discs. To provide a new record, a record reading method, and a record that avoid productivity at once.
更に本発明の方法によれば、上記の如く、一つ
の情報内容を簡便に多数複製できるのみならず、
経済上多数複製せざるを得ずかつ大型とならざる
を得ない成形機等を要する上記従来法と異り例え
ば家庭や事業所に於て記憶させたい情報を任意に
記録し保存するデイスクメモリーとしての記録及
び記録の読みだしにも極めて有用である。 Furthermore, according to the method of the present invention, as described above, one information content can not only be easily reproduced in large numbers;
Unlike the above-mentioned conventional method, which requires large numbers of copies for economic reasons and requires a large molding machine, it can be used, for example, as a disk memory to arbitrarily record and store information that you want to store in your home or office. It is also extremely useful for recording and reading out records.
すなわち、本発明は
1 600nm〜1200nmの可視光線又は近赤外線の
波長領域に極大吸収を有し、かつ紫外線、X
線、電子線又はイオンビームの照射によつて、
上記の可視光線又は近赤外線の吸収能を失うか
減ずる物質を含有する物体の所望の位置に夫々
紫外線、X線、電子線又はイオンビーム(以下
記録線と称する)を照射し、可視光線又は近赤
外線の吸収能の有無又は強弱のパターンを形成
して記録を行い、上記可視光線又は近赤外線の
波長を有するレーザー光を上記パターンにあて
て、該レーザー光吸収の有無又は強弱を検出し
て記録の読みだしを行う方法及び
2 600nm〜120nmの可視光線又は近赤外線波長
領域に極大吸収を有しかつ紫外線、X線、電子
線又はイオンビームの照射によつて、上記の可
視光線又は近赤外線の吸収能を失うか減ずる物
質を含有る物体の所望の位置に夫々紫外線、X
線、電子線又はイオンビームを照射し、可視光
線又は近赤外線の吸収能の有無又は強弱のパタ
ーンを形成した記録物である。 That is, the present invention has maximum absorption in the visible light or near-infrared wavelength region of 1,600 nm to 1,200 nm, and
By irradiation with radiation, electron beam or ion beam,
Ultraviolet rays, Recording is performed by forming a pattern of the presence or absence or strength of infrared absorption ability, and by applying a laser beam having the wavelength of visible light or near infrared rays to the above pattern, detecting the presence or absence or strength of absorption of the laser light and recording. 2. The above visible light or near infrared rays have maximum absorption in the visible light or near infrared wavelength region of 600 nm to 120 nm, and are Ultraviolet rays and X
This is a recorded material that has been irradiated with a beam, an electron beam, or an ion beam to form a pattern of the presence or absence or strength of absorption of visible light or near infrared rays.
本発明に用いる600nm〜1200nmの可視光線又
は近赤外線領域に極大吸収を有し、かつ記録線の
照射によつて、上記の可視光線又は近赤外線(以
下読みだし線と称する)の吸収能を失う物質(以
下記録物質と称する)としては、上記機能を有す
る物質は全て用いうるが、例えば極めて代表的な
例として芳香族ジアミン系金属錯体、芳香族ジチ
オール系金属錯体、メルカプトフエノール系金属
錯体、メルカプトフエニルアミン系金属錯体、脂
肪族ジチオール系金属錯体、アリールアルミニウ
ム塩などが用いられる。 It has maximum absorption in the visible light or near-infrared region of 600 nm to 1200 nm used in the present invention, and loses its ability to absorb the above-mentioned visible light or near-infrared light (hereinafter referred to as readout line) by irradiation with the recording line. As the substance (hereinafter referred to as recording substance), any substance having the above-mentioned functions can be used, but very typical examples include aromatic diamine-based metal complexes, aromatic dithiol-based metal complexes, mercaptophenol-based metal complexes, and mercaptophenol-based metal complexes. Phenylamine metal complexes, aliphatic dithiol metal complexes, arylaluminum salts, and the like are used.
本発明において記録物質として用いるために特
に好ましい具体例を示せば芳香族ジアミン系金属
錯体としてはビス(4−クロロ−o−フエニレン
ジアミン)ニツケル(極大吸収波長λmax〔以下
λmaxと称する〕800nm、モル比吸光係数ε〔以
下εと称する〕66600)、芳香族ジチオール系金属
錯体としてはビス(1,2,3,4−テトラクロ
ロ−5,6−ジチオフエノレート)ニツケル
()テトラ−n−ブチルアンモニウム
(λmax885nm、ε15700)、メルカプトフエノール
系金属錯体としてはビス(1−メルカプトレート
−2−ナフトレート)ニツケル()テトラ−n
−ブチルアンモニウム(λmax1100nm、
ε12290)、脂肪族ジチオール系金属錯体としては
ビス〔シス−1,2−ビス(p−メトキシフエニ
ル)エチレン−1,2−ジチオレート〕ニツケル
(λmax920nm、ε35000)、メルカプトフエニルア
ミン系金属錯体としてはビス(o−メルカプトア
ニリド)ニツケル(λmax825nm、ε8900)、アリ
ールアミニウム塩としてはp−メトキシフエニル
−ビス(ジエチルアミノフエニル)アミニウム・
SbF6塩(λmax630nmおよび1025nmでそれぞれ
のεは26800および5200)などが用いられ、一方
場合によつては、このような化合物の構造の部分
(以下記録物質部分と称する)を有する例えば重
合体や重合体を形成しうる化合物等の化合物であ
つてもよい。 Particularly preferred specific examples for use as a recording material in the present invention include bis(4-chloro-o-phenylenediamine) nickel (maximum absorption wavelength λmax [hereinafter referred to as λmax]) 800 nm as an aromatic diamine metal complex; The molar extinction coefficient ε [hereinafter referred to as ε] 66600), and the aromatic dithiol metal complex is bis(1,2,3,4-tetrachloro-5,6-dithiophenolate)nickel()tetra-n- Butylammonium (λmax885nm, ε15700), as a mercaptophenol metal complex, bis(1-mercaptolate-2-naphthlate)nickel()tetra-n
-Butylammonium (λmax1100nm,
ε12290), as an aliphatic dithiol metal complex, bis[cis-1,2-bis(p-methoxyphenyl)ethylene-1,2-dithiolate]nickel (λmax 920 nm, ε35000), as a mercaptophenylamine metal complex is bis(o-mercaptanilide) nickel (λmax825nm, ε8900), and the arylaminium salt is p-methoxyphenyl-bis(diethylaminophenyl)aminium.
SbF 6 salts (λmax 630 nm and 1025 nm with ε 26800 and 5200, respectively) are used, while in some cases, e.g. It may be a compound such as a compound capable of forming a polymer.
本発明の上記記録物質は、記録線のいずれかの
照射によつて上記の読みだし線の吸収能を失うか
減ずる物質や化合物であることが必要である。 The recording material of the present invention must be a substance or compound that loses or reduces its ability to absorb the readout line upon irradiation with any of the recording lines.
記録線の中で紫外線は装置の簡便性の点からは
最も好ましく通常450nm以下、特に160〜400nm
以下の波長を有する紫外線の照射が好ましく、紫
外線の発生装置としては、水銀燈、高圧水銀燈、
キセノンアークランプ、水銀・キセノンアークラ
ンプ、重水素ランプ等が通常用いられる。 Among the recording lines, ultraviolet rays are most preferable from the point of view of equipment simplicity, usually below 450 nm, especially from 160 to 400 nm.
Irradiation with ultraviolet rays having the following wavelengths is preferred, and examples of ultraviolet ray generators include mercury lamps, high-pressure mercury lamps,
Xenon arc lamps, mercury-xenon arc lamps, deuterium lamps, etc. are commonly used.
X線、電子線又はイオンビーム等の発生装置
は、紫外線の発生装置に比し高価で複雑である
が、より微細なパターン形成には有用である。 Although generators such as X-rays, electron beams, or ion beams are more expensive and complicated than ultraviolet ray generators, they are useful for forming finer patterns.
本発明の上記記録物質は、通常透明なプラスチ
ツク等の媒体基材に練り込みフイルム又はシート
状にして用いるか或いは上記記録物質を有機溶剤
等の溶媒に溶解し又は更にフイルム形成能を有す
る樹脂等を混合る等して支持体なる基材に塗布し
有機溶剤等を乾燥除去する等、一般的には平面又
は曲面にそつて通常均一に連続した状態で分布さ
せた層にして用いる。尚、上記の記録物質又は記
録物質部分の含有量はその極大吸収波長において
上記媒体基材の吸光係数の5倍以上好ましくは10
倍以上となるように使用されることが記録再生の
精度の点で好ましい。 The recording material of the present invention is usually kneaded into a medium base material such as transparent plastic to form a film or sheet, or the recording material is dissolved in a solvent such as an organic solvent, or a resin or the like having film-forming ability is used. It is generally used in the form of a layer distributed uniformly and continuously along a flat or curved surface, such as by coating the mixture on a base material called a support and drying and removing the organic solvent. The content of the recording material or recording material portion is preferably 5 times or more the extinction coefficient of the medium base material at its maximum absorption wavelength, preferably 10
From the viewpoint of recording/reproducing accuracy, it is preferable to use the number of times the number of times or more.
本発明に用いられる上記の記録物質を含有する
物体は、通常フイルム状、シート状等の平面形状
を有するのが一般的であるが、例えば円筒状や球
面状等の曲面体又はテープ状物等長尺形状のもの
であつてもよい。 The object containing the above-mentioned recording material used in the present invention generally has a planar shape such as a film or a sheet, but for example, a curved object such as a cylinder or a sphere, or a tape-like object, etc. It may be of elongated shape.
上記の如くして形成された記録物質含有層を有
する物体の所望の位置に記録線をあてパターンを
形成するには、記録線を透過する部分と透過しな
い部分を有するマスク材料を該物体の相当する面
に重ねあわせて照射を行うか、記録線をスポツト
ビームに集光し、かつ記録内容の信号に応じたパ
ルス状に、上記層をビーム及び/又は物体の移動
により走査せしめて、露光部分の読み出し線吸収
能を低下又は消失せしめ、読みだし線の吸収の有
無又は強弱による通常デジタル的パターンを形成
して情報の記録を行う。 To form a pattern by applying a recording line to a desired position of an object having a recording material-containing layer formed as described above, a mask material having a part that transmits the recording line and a part that does not transmit the recording line is applied to a corresponding part of the object. Either the recording line is focused into a spot beam, and the layer is scanned by the movement of the beam and/or object in a pulsed manner according to the signal of the recorded content, so that the exposed area is Information is recorded by reducing or eliminating the readout line absorption ability of the readout line and forming a digital pattern based on the presence or absence or strength of the readout line absorption.
又、記録線の照射量又は照射時間を自動的に調
整し、読みだし線の吸収能を連続的に変化させた
アナログ的パターンの形成による情報の記録を行
うことも可能である。 It is also possible to record information by automatically adjusting the irradiation amount or irradiation time of the recording line and forming an analog pattern in which the absorption capacity of the readout line is continuously changed.
上記のデジタル的パターンの形成においては、
ノイズの影響を出来るだけ低減する為に、露光の
読みだし線の吸収能は、未露光部の吸収能の2分
の1好ましくは5分の1以下更好ましくは10分の
1以下になるよう光源あるいは線源の強度、露光
時間及び/又は露光速度を調整することが一般的
である。 In forming the above digital pattern,
In order to reduce the influence of noise as much as possible, the absorption capacity of the exposure readout line should be one-half or less, preferably one-fifth or less, and more preferably one-tenth or less of the absorption capacity of the unexposed area. It is common to adjust the intensity, exposure time and/or exposure rate of the light or radiation source.
上記の如くして得られたパターン上に、600nm
〜120nmの波長を有する読みとり線としてレーザ
ー光をレンズで絞り常1μ以下のスポツトビーム
として照射して、レーザー光の吸収の有無又は強
弱からレーザー光の透過率の差異又は反射率の差
異を検出して記録された情報を読みとる。上記の
レーザー光の透過又は反射による光量変化は、例
えば光電管やフオトダイオードの使用等の通常の
方法によつて電気信号に変換され、音声、画像の
再生やコンピユーターの入力に結びつけられる。 600nm on the pattern obtained as above.
Laser light is irradiated as a reading line with a wavelength of ~120 nm through a lens, and is irradiated as a spot beam with a diameter of usually less than 1 μm. Differences in transmittance or reflectance of the laser light are detected from the presence or absence of absorption or strength of the laser light. and read the information recorded. The above-mentioned change in the amount of light due to transmission or reflection of the laser beam is converted into an electrical signal by a conventional method such as using a phototube or photodiode, and is connected to reproduction of audio and images or input to a computer.
レーザー光の発生装置としては、例えばヘリウ
ムネオンレーザー、アルゴンイオンレーザー、炭
酸ガスレーザー、各種固体レーザー、各種半導体
レーザー等が用いられ600nm〜1200nmの波長を
有するレーザーであればレーザーの発生方式によ
らずいずれでも用いることが出来るが、上記した
記録物質の極大吸収値に近い波長を有するレーザ
ーを読みとりに用いることが好ましい。 Examples of laser light generators used include helium neon lasers, argon ion lasers, carbon dioxide lasers, various solid-state lasers, and various semiconductor lasers. Regardless of the laser generation method, as long as the laser has a wavelength of 600 nm to 1200 nm, Although any one can be used, it is preferable to use a laser having a wavelength close to the maximum absorption value of the above-mentioned recording material for reading.
尚、レーザー光の反射率の差異によつて読みだ
しを行う場合には、レーザー光の照射面の反対側
に金属蒸着等の方法により平滑な反射層を形成
し、記録物質含有層を透過したレーザー光を反射
せしめるとよい。 In addition, when reading based on the difference in reflectance of laser light, a smooth reflective layer is formed on the opposite side of the surface irradiated with the laser light by a method such as metal vapor deposition, and the layer containing the recording material is transmitted through the layer. It is better to reflect the laser light.
上述の如き本発明の記録及び記録の読みだし方
法は、ビデオ等の画像の記録、再生や、音声の記
録、再生等の単一情報を多量に複製する場合に特
に有用である他、単一の読み取り行程でデジタル
的に記録された多重情報の時間分割的読みとりも
可能であり、コンピユーター用メモリーデイスク
等の情報の記録及び読みだしに広く利用すること
が出来、コンピユーター用メモリーデイスク等の
用途においては、ユーザー側での情報の書きこみ
が容易に行うことが出来る点従来に比し格段に秀
れる。 The recording and recording reading method of the present invention as described above is particularly useful when a large amount of single information is to be reproduced, such as when recording and playing back images such as videos, recording and playing back audio, etc. It is also possible to read multiplexed information digitally recorded in the reading process in a time-division manner, and it can be widely used for recording and reading information on computer memory disks, etc. is much superior to conventional methods in that it allows the user to easily write information.
以下実施例を示し本発明を具体的に説明する
が、これらは本発明の理解を容易ならしめる為の
極めて代表的な例にすぎず本発明は、これらに限
定されるものではない。 The present invention will be specifically explained below with reference to Examples, but these are only extremely representative examples for facilitating understanding of the present invention, and the present invention is not limited to these.
なお以下に於る部、%、比率は特記せぬ限り重
量基準による。 Note that parts, percentages, and ratios below are based on weight unless otherwise specified.
実施例 1
ビス(1−メルカプトレート−2−ナフトレー
ト)ニツケル()テトラ−n−ブチルアンモニ
ウム(λmax1100nm)10部及びポリメチルメタ
クリレート樹脂100部をジクロルメタン500部及び
メチルエチルケトン500部の混合溶媒に溶解し、
厚さ3mmのメタクリル樹脂板上に乾燥塗布厚が
10μになるように塗布し、80℃で30分間熱風乾燥
炉で乾燥して記録物質含有層を形成し、その上に
1μ巾のスリツトを有するフオトマスクをかぶせ、
120W/cmの出力を有する高圧水銀燈ランプ下で
10秒間紫外線照射を行つた。次にこのシートに
Nd3+−YAGレーザー光(波長1060nm)のスポ
ツトビーム(直径1μ)をあて、上記材料をスラ
イドして紫外線の露光部及び未露光部を透過する
レーザー光の光量をフオトダイオードで検出し電
気信号に変換した結果スポツトビームが露光部を
通過する時に明りような信号が得られた。尚、上
記の紫外線照射条件でマスクを用いず露光した試
料の、上記レーザー光での吸収係数は、未露光試
料の吸収係数の1/8であつた。Example 1 10 parts of bis(1-mercaptolate-2-naphtholate)nickel()tetra-n-butylammonium (λmax 1100 nm) and 100 parts of polymethyl methacrylate resin were dissolved in a mixed solvent of 500 parts of dichloromethane and 500 parts of methyl ethyl ketone,
Dry coating thickness on a 3mm thick methacrylic resin plate
It was applied to a thickness of 10 μm and dried in a hot air drying oven at 80°C for 30 minutes to form a recording substance-containing layer, and then
Cover with a photo mask with a 1 μ wide slit,
Under a high pressure mercury lamp with an output of 120W/cm
Ultraviolet irradiation was performed for 10 seconds. Then on this sheet
A spot beam (diameter 1μ) of Nd 3+ -YAG laser light (wavelength 1060nm) is applied to the material, and the amount of laser light transmitted through the exposed and unexposed parts of the ultraviolet rays is detected by a photodiode and an electrical signal is generated by sliding the material. As a result, a bright signal was obtained when the spot beam passed through the exposure section. Note that the absorption coefficient of the sample exposed to the above-mentioned laser beam under the above-mentioned ultraviolet irradiation conditions without using a mask was 1/8 of the absorption coefficient of the unexposed sample.
実施例 2
ビス(1,2,3,4−テトラクロロ−5,6
−ジチオフエノレート)ニツケル()テトラ−
n−ブチルアンモニウム(λmax885nm)75部を
射出成型グレードのメタクリル樹脂1000部に、溶
融状態でねりこみ、射出成型で厚さ1.2mmの記録
物質含有のシートを得た。これに実施例1に用い
た1μのスリツトを有するフオトマスクをかぶせ、
アルミニウムをターゲツトとするX線を5秒間照
射した。次にこのシートに、AlGaAsレーザー光
(波長850nm)のスポツトビーム(直径1μ)をあ
て、上記シートをスライドしてX線の露光部及び
未露光部を透過するレーザー光の光量をフオトダ
イオードで検出し電気信号に変換した結果、スポ
ツトビームが露光部を通過する時に明りような信
号が得られた。尚、上記の紫外線照射条件でマス
クを用いず露光した試料の、上記レーザー光での
吸収係数は、未露光試料の吸収係数の1/12であつ
た。Example 2 Bis(1,2,3,4-tetrachloro-5,6
-dithiophenolate)nickel()tetra-
75 parts of n-butylammonium (λmax 885 nm) was kneaded into 1000 parts of injection molding grade methacrylic resin in a molten state to obtain a recording material-containing sheet having a thickness of 1.2 mm by injection molding. Cover this with the photomask having a 1μ slit used in Example 1,
X-rays targeting aluminum were irradiated for 5 seconds. Next, a spot beam (diameter 1 μ) of AlGaAs laser light (wavelength 850 nm) is applied to this sheet, and the sheet is slid to detect the amount of laser light that passes through the X-ray exposed and unexposed areas using a photodiode. As a result of converting it into an electrical signal, a bright signal was obtained when the spot beam passed through the exposure section. Incidentally, the absorption coefficient of the sample exposed to the above-mentioned laser beam under the above-mentioned ultraviolet irradiation conditions without using a mask was 1/12 of the absorption coefficient of the unexposed sample.
実施例 3
p−メトキシフエニル−ビス(ジエチルアミノ
フエニル)アミニウムSbF6塩(λmax630nm)12
部をポリエチレンフタレート樹脂100部に混合し、
溶融状態で練合した後、厚さ100μのフイルムに
ひいて記録物質含有のフイルムを得た。Example 3 p-methoxyphenyl-bis(diethylaminophenyl)aminium SbF 6 salt (λmax630nm) 12
100 parts of polyethylene phthalate resin,
After kneading in a molten state, the mixture was rolled into a film having a thickness of 100 μm to obtain a film containing a recording substance.
このフイルム上に、高密度集積回路作成用の電
子線描画装置を用いて、直径1μに集束した電子
線を走査させて露光を行つた。 This film was exposed by scanning an electron beam focused to a diameter of 1 μm using an electron beam lithography system for producing high-density integrated circuits.
次に上記フイルム上にHe−Neレーザー光(波
長633nm)のスポツトビーム(直径1μ)をあて、
電子線の露光部及び未露光部を透過するレーザー
光の光量をフオトダイオードで検出し電気信号に
変換した結果、スポツトビームが露光部を通過す
る時に明りような信号が得られた。 Next, a spot beam (diameter 1μ) of He-Ne laser light (wavelength 633nm) was applied to the above film.
As a result of detecting the amount of laser light transmitted through the exposed and unexposed areas of the electron beam using a photodiode and converting it into an electrical signal, a bright signal was obtained when the spot beam passed through the exposed area.
尚、上記の紫外線照射件での露光部の上記レー
ザー光での吸収係数は未露光部の1/15であつた。 In addition, under the above-mentioned ultraviolet irradiation condition, the absorption coefficient of the exposed area to the laser beam was 1/15 of that of the unexposed area.
実施例 4
実施例1で得られた記録物質含有層を有するシ
ートに、300Wの水銀燈から出る紫外線を、光量
0〜100%連続的に変動する絞りも通し、更にそ
の紫外線を直径5μのスポツトビームに集光して
照射し、上記シートをスライドした。上記紫外線
の露光部分を実施例1で用いたレーザー光のスポ
ツトビームでトレースし、レーザー光の透過量を
光電管で検出し電気信号に変換した結果、紫外線
照射時の絞りの変動と比例関係にある信号が得ら
れた。Example 4 The ultraviolet rays emitted from a 300W mercury lamp were passed through a diaphragm whose light intensity was continuously varied from 0 to 100% on the sheet having the recording substance-containing layer obtained in Example 1, and the ultraviolet rays were then applied to a spot beam with a diameter of 5μ. The sheet was then slid. The UV-exposed area was traced using the laser spot beam used in Example 1, and the amount of laser light transmitted was detected by a phototube and converted into an electrical signal. As a result, it was found that there is a proportional relationship with the change in the aperture during UV irradiation. I got a signal.
実施例 5
実施例1のビス(1−メルカプトレート−2−
ナフトレート)ニツケル()テトラ−n−ブチ
ルアンモニウムの代わりにビス(4−メチル−o
−フエニレンジアミノ)ニツケル
(λmax795nm、ε55100)を用いる以外は、実施
例1と同様にして記録物質含有のフイルムを得
た。このフイルムの上に2μ巾のスリツトの有す
るフオトマストをかぶせ120W/cmの出力を有す
るメタルハライドランプ下で10秒間紫外線照射を
行つた。次に、このフイルムに、半導体レーザー
(発信波長780nm)光のスポツトビーム(ビーム
直径1.7μ)を移動させながら照射し、フイルム上
の紫外線露光部及び未露光部の光量をフオトダイ
オードで検出した結果、スポツトビームが露光部
を通過する時に明瞭な信号が得られた。なお、上
記の紫外線照射条件でマスクを用いず露光した試
料の上記レーザー光での吸収係数は、未露光試料
の吸収係数の1/10であつた。Example 5 Bis(1-mercaptolate-2-
bis(4-methyl-o) instead of nickel()tetra-n-butylammonium
A film containing a recording material was obtained in the same manner as in Example 1, except that nickel (λmax 795 nm, ε 55100) was used. A photomast having a 2 μ wide slit was placed on top of this film, and ultraviolet rays were irradiated for 10 seconds under a metal halide lamp with an output of 120 W/cm. Next, this film was irradiated with a moving spot beam (beam diameter 1.7μ) of semiconductor laser (emission wavelength 780nm) light, and the amount of light in the ultraviolet exposed and unexposed areas on the film was detected using a photodiode. , a clear signal was obtained when the spot beam passed through the exposure section. Note that the absorption coefficient of the sample exposed to the above-mentioned laser beam under the above-mentioned ultraviolet irradiation conditions without using a mask was 1/10 of the absorption coefficient of the unexposed sample.
実施例 6
実施例1のビス(1−メルカプトレート−2−
ナフトレート)ニツケル()テトラ−n−ブチ
ルアンモニウムの代わりにビス〔シス−1,2−
ビス(p−メトキシフエニル)エチレン−1,2
−ジチオレート〕ニツケル(λmax920nm、
ε35000、1060nmでのε28000)を用いる以外は、
実施例1と同様にして記録物質含有のフイルムを
得た。次に実施例1と同様にして紫外線照射を行
つた後、露光部及び未露光部の検出を行つた結
果、スポツトビームが露光部を通過する時に明瞭
な信号が得られた。なお、上記の紫外線照射条件
でマスクを用いず露光した試料の上記レーザー光
での吸収係数は、未露光試料の吸収係数の1/8で
あつた。Example 6 Bis(1-mercaptolate-2-
bis[cis-1,2-naphthlate)nickel()tetra-n-butylammonium
Bis(p-methoxyphenyl)ethylene-1,2
-dithiolate]Nickel (λmax920nm,
ε35000, ε28000 at 1060nm)
A film containing a recording material was obtained in the same manner as in Example 1. Next, after ultraviolet irradiation was performed in the same manner as in Example 1, the exposed and unexposed areas were detected. As a result, a clear signal was obtained when the spot beam passed through the exposed area. Note that the absorption coefficient of the sample exposed to the above-mentioned laser beam under the above-mentioned ultraviolet irradiation conditions without using a mask was 1/8 of the absorption coefficient of the unexposed sample.
実施例 7
実施例2のビス(1,2,3,4−テトラクロ
ロ−5,6−ジチオフエノレート)ニツケル
()テトラ−n−ブチルアンモニウムの代わり
に、ビス(o−メルカプトアニリド)ニツケル
(λmax825nm、ε8900)を用いる以外は、実施例
2と全く同様な法で行つた結果、スポツトビーム
が露光部を通過する際に明瞭な信号が得られた。
なお、上記の紫外線照射条件でマスクを用いず露
光した試料の上記レーザー光での吸収係数は、未
露光試料の吸収係数の1/10であつた。Example 7 Instead of bis(1,2,3,4-tetrachloro-5,6-dithiophenolate)nickel()tetra-n-butylammonium in Example 2, bis(o-mercaptoanilide)nickel( As a result, a clear signal was obtained when the spot beam passed through the exposure section.
Note that the absorption coefficient of the sample exposed to the above-mentioned laser beam under the above-mentioned ultraviolet irradiation conditions without using a mask was 1/10 of the absorption coefficient of the unexposed sample.
Claims (1)
長領域に極大吸収を有しかつ紫外線、X線、電子
線又はイオンビームの照射によつて、上記の可視
光線又は近赤外線の吸収能を失うか減ずる、芳香
族ジアミン系金属錯体、芳香族ジチオール系金属
錯体(但し、ベンゼンジチオール系ニツケル錯体
を除く)、メルカプトフエノール系金属錯体、メ
ルカプトフエニルアミン系金属錯体、脂肪族ジチ
オール系金属錯体、アリールアミニウム塩からな
る群より選択される記録物質を含有する物体の所
望の位置に夫々紫外線、X線、電子線又はイオン
ビームを照射し、可視光線又は近赤外線の吸収能
の有無又は強弱のパターンを形成して記録を行う
記録方法であつて、上記可視光線又は近赤外線域
の波長を有するレーザー光を上記パターンにあて
て該レーザー光吸収の有無又は強弱を検出して記
録の読みだしを行いうることを特徴とする方法。1. Has maximum absorption in the visible light or near-infrared wavelength region of 600 nm to 1200 nm, and loses or reduces the above-mentioned visible light or near-infrared absorption ability by irradiation with ultraviolet rays, X-rays, electron beams, or ion beams; Aromatic diamine metal complexes, aromatic dithiol metal complexes (excluding benzenedithiol nickel complexes), mercaptophenol metal complexes, mercaptophenol amine metal complexes, aliphatic dithiol metal complexes, arylaminium salts A desired position of an object containing a recording material selected from the group consisting of is irradiated with ultraviolet rays, The present invention is a recording method in which a laser beam having a wavelength in the visible light or near infrared region is applied to the pattern, and the recording can be read by detecting the presence or absence or strength of absorption of the laser beam. How to characterize it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56078584A JPS57195336A (en) | 1981-05-26 | 1981-05-26 | Recording and record reading method and recorded body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56078584A JPS57195336A (en) | 1981-05-26 | 1981-05-26 | Recording and record reading method and recorded body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57195336A JPS57195336A (en) | 1982-12-01 |
| JPH038534B2 true JPH038534B2 (en) | 1991-02-06 |
Family
ID=13665953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56078584A Granted JPS57195336A (en) | 1981-05-26 | 1981-05-26 | Recording and record reading method and recorded body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57195336A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6083029A (en) * | 1983-10-13 | 1985-05-11 | Mitsui Toatsu Chem Inc | Optical recording medium |
| JPH0626028B2 (en) * | 1984-02-06 | 1994-04-06 | 株式会社リコー | Optical information recording medium |
| JPH0632996B2 (en) * | 1984-04-24 | 1994-05-02 | 三井東圧化学株式会社 | Optical recording method |
| JP2695264B2 (en) * | 1990-01-09 | 1997-12-24 | シャープ株式会社 | Optical recording and reading method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5953614B2 (en) * | 1975-12-09 | 1984-12-26 | 松下電器産業株式会社 | how to do it |
| JPS54133134A (en) * | 1978-04-06 | 1979-10-16 | Canon Inc | Recording medium |
| JPS54156521A (en) * | 1978-05-31 | 1979-12-10 | Asahi Chemical Ind | Picture forming material |
-
1981
- 1981-05-26 JP JP56078584A patent/JPS57195336A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57195336A (en) | 1982-12-01 |
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