JPH0410212B2 - - Google Patents
Info
- Publication number
- JPH0410212B2 JPH0410212B2 JP61148312A JP14831286A JPH0410212B2 JP H0410212 B2 JPH0410212 B2 JP H0410212B2 JP 61148312 A JP61148312 A JP 61148312A JP 14831286 A JP14831286 A JP 14831286A JP H0410212 B2 JPH0410212 B2 JP H0410212B2
- Authority
- JP
- Japan
- Prior art keywords
- band
- laser beam
- strip
- shaped
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61148312A JPS636828A (ja) | 1986-06-26 | 1986-06-26 | 単結晶半導体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61148312A JPS636828A (ja) | 1986-06-26 | 1986-06-26 | 単結晶半導体薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS636828A JPS636828A (ja) | 1988-01-12 |
| JPH0410212B2 true JPH0410212B2 (fr) | 1992-02-24 |
Family
ID=15449973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61148312A Granted JPS636828A (ja) | 1986-06-26 | 1986-06-26 | 単結晶半導体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS636828A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63142810A (ja) * | 1986-12-05 | 1988-06-15 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JP2003168645A (ja) * | 2001-12-03 | 2003-06-13 | Hitachi Ltd | 半導体薄膜装置、その製造方法及び画像表示装置 |
-
1986
- 1986-06-26 JP JP61148312A patent/JPS636828A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS636828A (ja) | 1988-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0235819B1 (fr) | Procédé pour fabriquer une couche semi-conductrice monocristalline | |
| EP0178447B1 (fr) | Une méthode de fabrication d'un circuit intégré basé sur la technologie semi-conducteur sur isolant | |
| US5310446A (en) | Method for producing semiconductor film | |
| US4861418A (en) | Method of manufacturing semiconductor crystalline layer | |
| KR970003848B1 (ko) | 반도체 장치 및 그 제조방법 | |
| JPS62160712A (ja) | 半導体装置の製造方法 | |
| KR100250182B1 (ko) | 반도체결정의 형성방법 및 반도체소자 | |
| JPS636828A (ja) | 単結晶半導体薄膜の製造方法 | |
| JPS621220A (ja) | 欠陥が局在された配向シリコン単結晶膜を絶縁支持体上に製造する方法 | |
| JPH05166839A (ja) | 半導体装置およびその製造方法 | |
| JPH0652712B2 (ja) | 半導体装置 | |
| JPH0152888B2 (fr) | ||
| JPH0670966B2 (ja) | 単結晶半導体薄膜の製造方法 | |
| JPH0236051B2 (fr) | ||
| JPH0442358B2 (fr) | ||
| JPH0257337B2 (fr) | ||
| JPS5946021A (ja) | 半導体装置の製造方法 | |
| JPH0340513B2 (fr) | ||
| JP2772824B2 (ja) | Pn接合を単位とする半導体装置 | |
| JPH0523492B2 (fr) | ||
| JPS6239009A (ja) | Soi基板形成方法 | |
| JPS6091624A (ja) | 半導体装置 | |
| JPH0368532B2 (fr) | ||
| JPS5939023A (ja) | 半導体薄膜の製造方法 | |
| JPS6310516A (ja) | 薄膜再結晶化法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |