JPH04103649U - semiconductor equipment - Google Patents

Abstract

(57) [Summary] [Purpose] To increase the current capacity of a semiconductor device. [Structure] The device has a semiconductor region 1b and an electrode 3 formed on the main surface thereof, and when connecting a thin lead wire 4 to the electrode 3, at least two connecting portions 4a and 4b are provided at a distance.

Description

[Detailed explanation of the idea]

0001

[Industrial application field]

The present invention relates to semiconductor devices such as transistors and thyristors.

0002

[Problems to be solved by conventional techniques and ideas]

In transistors and thyristors, an insulating film is formed on one main surface of the semiconductor substrate. , the main electrode is connected to the semiconductor substrate through an opening formed in this insulating film. In addition, one end of the thin lead wire is connected to the main electrode and electrically connected to external leads, etc. It is. Incidentally, in recent years, there has been a remarkable increase in the power consumption of these semiconductor devices. Therefore, there is an urgent need to increase the current capacity of the device.

0003 Therefore, this invention provides a semiconductor device with a new structure that can realize large current capacity. It is intended to.

0004

[Means to solve the problem]

To achieve the above object, the present invention includes a semiconductor region and a main surface of the semiconductor region. electrodes formed therein, and identical lead wires are spaced apart from each other with respect to said electrodes. The present invention relates to a semiconductor device characterized by being connected at two or more points.

[0005]

[Effect]

According to the semiconductor device of the present invention, the same thin lead wire is connected to the electrode at two or more locations. Because they are connected, the thin lead wire and the inside of the semiconductor area and electrode that reach the thin lead wire The current density of the current path can be reduced.

[0006]

【Example】

Hereinafter, a semiconductor device according to an embodiment of the present invention will be explained with reference to FIGS. 1 and 2. Ru.

The semiconductor device of this embodiment includes a semiconductor substrate 1 , an insulating film 2 , a metal electrode 3 , and a thin lead wire 4 . Semiconductor substrate 1 has a P-type region 1a and an N ⁺ -type region 1b which is surrounded by and adjacent to P-type region 1a with its upper surface exposed on one main surface of semiconductor substrate 1. The insulating film 2 is made of a silicon oxide film or the like, and the upper surface of the N ⁺ type region 1b is exposed through the opening 5 formed therein. The metal electrode 3 consists of a relatively thin first metal film 6 and a relatively thick second metal film 7. The first metal film 6 extends to the outside of the portion where the PN junction 8 between the P type region 1a and the N ⁺ type region 1b is exposed on the upper surface of the semiconductor substrate 1, and functions as a well-known field plate. . The second metal film 7 is formed inside the N ⁺ type region 1b when viewed in plan.

[0008] The thin lead wire 4 is an Al (aluminum) wire having a diameter of about 400 μm. , are connected to the second metal film 7 of the metal electrode 3 at two points spaced apart from each other. . More specifically, the thin lead wire 4 has a rectangular planar shape, as is clear from FIG. The second metal film 7 is disposed on a diagonal line, and the first contact with the second metal film 7 is The connecting portion 4a and the second connecting portion 4b are located on this diagonal line. Extension of thin lead wire 4 The length L1 of the first connecting portion 4a in the direction of The length L2 between the connecting portion 4b and the length L3 of the second connecting portion 4b are each approximately 950μ. m is set. The thin lead wire 4 is pressed in its radial direction by the capillary. Since the first and second connecting portions 4a and 4b are connected to the second metal film 7 as shown in FIG. The width W is approximately 2.5 times the diameter of the thin lead wire 4. In this example The second metal film 7 has a substantially square planar shape of 2.5 mm x 2.5 mm; Since the bonding area 9 is provided in the diagonal direction of W connection parts 4a and 4b can be accommodated. The length of the bonding region 9 is L1 It is of course longer than the sum of L2 and L3.

According to the semiconductor device of this embodiment, the thin lead wire 4 is connected to the electrode 3 at two points spaced apart from each other, so unlike the conventional method, the thin lead wire 4 is connected to the electrode at one point. We were able to increase the current capacity compared to the case where the The reason for this is firstly that the area of the connection between the thin lead wire 4 and the electrode 3 increases and the current density decreases, and secondly that the connecting portions 4a and 4b of the thin lead wire 4 are spaced apart on both sides of the electrode 3. This is thought to be due to the fact that the main current path from the P type region 1a, the N ⁺ type region 1b, and the electrode 3 to the thin lead wire 4 is divided into left and right sides, and the current density in each is reduced. In particular, in this embodiment, the thin lead wire 4 is stretched diagonally across the electrode 3, which is advantageous because the distance L2 between the first connecting portion 4a and the second connecting portion 4b can be increased. Further, since the first connecting portion 1a and the second connecting portion 1b are in a straight line including the lead portion therebetween, stitch bonding can be performed satisfactorily.

0010

[Modified example]

The present invention is not limited to the above-mentioned embodiments, but can be modified as follows, for example. It is.

[0011] If the area of the electrode 3 is large, a bonding area 9 is provided parallel to the side of the electrode 3. can be done.

0012 When the area of electrode 3 is large, make L2 larger than L1 and L3 to concentrate the current. can be further relaxed.

[0013] The electrode 3 has a structure in which the first metal film 6 is formed thickly and the second metal film 7 is omitted. You can also Further, the second metal film 7 is extended to the upper side of the insulating film 2, and the first metal film 7 is It is also possible to completely cover the upper surface of the metal film 6. However, the actual In a semiconductor device, an EQR (equipotential ring) or other electrode metal is placed around this electrode 3. Since a layer is formed, the electric current is Pole 3 has two or more layers. In this case, a relatively thin metal on the underside that is easy to etch. A relatively thick metal film that contributes to an increase in current capacity is formed on the upper side.

[0014]

【Effect of the invention】

As described above, according to the semiconductor device of the present invention, the current capacity increases.

[Brief explanation of drawings]

FIG. 1 is a sectional view of a portion corresponding to line 1-1 in FIG. 2, showing a part of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view showing a part of FIG. 1;

[Explanation of symbols]

1 Semiconductor substrate 2 Insulating film 3 electrode 4 Thin lead wire 4a First connection 4b Second connection part

Claims (1)

[Scope of utility model registration request] 1. A semiconductor device comprising a semiconductor region and an electrode formed on a main surface of the semiconductor region, wherein the same thin lead wire is connected to the electrode at two or more locations spaced apart from each other. semiconductor devices.