JPH04105232A - Magneto-optical disk - Google Patents

Magneto-optical disk

Info

Publication number
JPH04105232A
JPH04105232A JP22380390A JP22380390A JPH04105232A JP H04105232 A JPH04105232 A JP H04105232A JP 22380390 A JP22380390 A JP 22380390A JP 22380390 A JP22380390 A JP 22380390A JP H04105232 A JPH04105232 A JP H04105232A
Authority
JP
Japan
Prior art keywords
film
interference
dielectric
films
magneto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22380390A
Other languages
Japanese (ja)
Inventor
Takashi Sano
孝史 佐野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Columbia Co Ltd
Original Assignee
Nippon Columbia Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Columbia Co Ltd filed Critical Nippon Columbia Co Ltd
Priority to JP22380390A priority Critical patent/JPH04105232A/en
Publication of JPH04105232A publication Critical patent/JPH04105232A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To easily obtain the reflectivity required for a driving device by forming dielectric films consisting of a metal oxide or metal nitride by a sputtering method on a base body and forming the interference films consisting of the 1st and 2nd dielectric films varying in refractive index. CONSTITUTION:The interference film 21 consisting of the 1st dielectric film and the interference film 22 consisting of the 2nd dielectric film are laminated on the substrate 1. These films are the dielectric films consisting of the metal oxide or metal nitride and further, a magneto-optical recording medium 3, a protective film 4 and a UV curing resin 5 are laminated thereon. The interference films 21, 22 are formed by the sputtering method. Since the interference films are formed of the two layers; the 1st layer dielectric film 21 and the 2nd dielectric film 22 varying in the refractive index in such a manner, the film thicknesses of the two layers varying in the refractive index are respectively changed by the interference of light. The film formation of the dielectric films 21, 22 varying in the refractive index is also easily controlled by the presence or absence of nitrogen or oxygen during sputtering. The reflectivity required for the driving device is obtd. with the simple structure and film forming method in this way.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光ビームを用いて情報の記録、再生および消
去される光磁気ディスクの誘電体膜に関するものである
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dielectric film of a magneto-optical disk in which information is recorded, reproduced and erased using a light beam.

〔従来の技術〕[Conventional technology]

光ビームを用いて情報の記録、再生および消去される光
磁気ディスクは、書き換え可能な情報を高密度に記録す
ることができるので、幅広い分野への用途が見込まれて
いる。
Magneto-optical disks, in which information is recorded, reproduced, and erased using a light beam, are capable of recording rewritable information at high density, and are therefore expected to be used in a wide range of fields.

従来、光磁気ディスクの構造としては、ガラスやポリカ
ーボネイトなどの透明基板上に、第1層としてSin、
Sin、などの金属酸化物、/IN、SiNなどの金属
窒化物、ZnSなどの金属硫化物、5iAj!ONなど
の金属混合物を含めた誘電体膜、第2層として光磁気記
録媒体膜、第3層として前記誘電体膜が形成されたもの
や、第1層として前記誘電体膜、第2層として光磁気記
録媒体膜、第3層として前記誘電体膜および第4層とし
てAI、Bi、Phなどの金属膜が形成されているもの
が公知のディスク構造である。誘電体膜は記録媒体膜の
保護膜及び3層構造では第1層の誘電体膜が、4層構造
では第3層の誘電体膜が干渉膜として働く。通常、ディ
スクの反射率は、この干渉膜である誘電体膜自体の持つ
屈折率と光吸収係数、膜厚により決まる。
Conventionally, the structure of magneto-optical disks has been to use a transparent substrate made of glass, polycarbonate, etc. as the first layer of
Metal oxides such as Sin, /IN, metal nitrides such as SiN, metal sulfides such as ZnS, 5iAj! A dielectric film containing a metal mixture such as ON, a magneto-optical recording medium film as the second layer, and a dielectric film formed as the third layer, or a dielectric film as the first layer and the second layer as the dielectric film. A known disk structure includes a magneto-optical recording medium film, the dielectric film as the third layer, and a metal film such as AI, Bi, Ph, etc. as the fourth layer. The dielectric film serves as a protective film for the recording medium film, and in a three-layer structure, the first dielectric film serves as an interference film, and in a four-layer structure, the third dielectric film serves as an interference film. Usually, the reflectance of a disk is determined by the refractive index, light absorption coefficient, and film thickness of the dielectric film itself, which is this interference film.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、これらの光磁気ディスクにおいては、デ
ィスクの反射率は10%〜40%と低反射率であり、今
後光磁気ディスクの新分野として市場が期待されるCD
1j換タイプの光磁気ディスクには適応がむずかしい。
However, these magneto-optical disks have a low reflectance of 10% to 40%, and CDs are expected to become a new field in the magneto-optical disk market in the future.
It is difficult to adapt to 1j conversion type magneto-optical disks.

本発明の目的は、これらの問題を解決して簡単な構造及
び成膜方法で形成でき、ドライブ装置の要求する反射率
を提供し、また長期の耐久性も優れ充分実用化に値する
光磁気ディスクを提供することにある。
The purpose of the present invention is to solve these problems and provide a magneto-optical disk that can be formed with a simple structure and film formation method, provides the reflectance required by drive devices, has excellent long-term durability, and is worthy of practical use. Our goal is to provide the following.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、前記目的を達成するものとして、前記従来よ
りの3層光磁気ディスクの構造ではあるが、基板上に反
応性スパッタリングにより成膜された金属酸化物、金属
窒化物などからなる第1の誘電体膜に重ね、すなわち基
板側の界面及び近傍あるいは記録媒体側の界面及び近傍
を酸素または窒素無しの不活性ガスアルゴンのみのスパ
ッタリングすることにより成膜し第1の誘電体膜とは屈
折率の異なる第2の誘電体膜となるようにしたものであ
る。
To achieve the above object, the present invention has the structure of the conventional three-layer magneto-optical disk. The first dielectric film is formed by sputtering only the inert gas argon without oxygen or nitrogen on the interface and vicinity on the substrate side or the interface and vicinity on the recording medium side. This is a second dielectric film having a different coefficient.

〔作用〕[Effect]

本発明による作用を以下に説明する。上述のようなディ
スク構造、すなわち、干渉膜である第1層誘電体膜が屈
折率の異なる同種の第2の誘電体膜の2層により形成さ
れているため、光の干渉により屈折率の異なる2層の膜
厚をそれぞれ変化させることで所望の反射率が得られる
。また屈折率の異なる誘電体膜2層の成膜も誘電体膜タ
ーゲットスパッタリング中窒素あるいは酸素の有無で容
易に制御し作成することができる。このことから、上述
のようなディスク構造及び成膜方法では、ドライブ装置
が要求する所望の反射率のディスクを容易に提供するこ
とができる。
The effects of the present invention will be explained below. In the disk structure as described above, in other words, the first layer dielectric film, which is an interference film, is formed of two layers of the same type of second dielectric film with different refractive indexes, so the refractive index differs due to light interference. A desired reflectance can be obtained by changing the film thicknesses of the two layers. Further, the formation of two dielectric films having different refractive indexes can be easily controlled by controlling the presence or absence of nitrogen or oxygen during dielectric film target sputtering. Therefore, with the above-described disk structure and film formation method, it is possible to easily provide a disk with a desired reflectance required by a drive device.

〔実施例〕〔Example〕

第1図は本発明による光磁気ディスクの一実施例を示す
断面図である。即ち、1はポリカーボネイト基板であり
、その上に第1の誘電体膜の干渉膜21、第2の誘電体
膜の干渉W#22を積層し、これはSin、Sin、な
どの金属酸化物、Al1N、SiNなどの金属窒化物、
5iAj!N、5iAIONなどの金属混合物から成る
誘電体膜であり、更に光磁気記録媒体3.保護膜4.紫
外線硬化樹脂膜(以下UV樹脂)5を積層した。ここで
、基板1はポリカーボネイトに限ることなくPMMA、
ポリオレフィン、エポキシ等のプラスチック材、ガラス
板等を使用できる。光磁気記録媒体3及びSin、Si
n、、AIN、SiN、5iAIN、5iAjON等の
干渉膜21.22、保護膜4はスパッタリング法により
作製し、UV樹脂はスピンコードによりスピンコードす
る。ディスク構造に関しては、密着型の両面記録タイプ
やエアーサンドウィッチ型の両面記録タイプも可能であ
る。
FIG. 1 is a sectional view showing an embodiment of a magneto-optical disk according to the present invention. That is, 1 is a polycarbonate substrate, on which are laminated the interference film 21 of the first dielectric film and the interference film W#22 of the second dielectric film. Metal nitrides such as Al1N and SiN,
5iAj! A dielectric film made of a metal mixture such as N, 5iAION, etc., and a magneto-optical recording medium.3. Protective film 4. An ultraviolet curing resin film (hereinafter referred to as UV resin) 5 was laminated. Here, the substrate 1 is not limited to polycarbonate, but may be PMMA,
Plastic materials such as polyolefin and epoxy, glass plates, etc. can be used. Magneto-optical recording medium 3 and Sin, Si
The interference films 21, 22 such as n, AIN, SiN, 5iAIN, 5iAjON, etc. and the protective film 4 are fabricated by sputtering, and the UV resin is spin coded by a spin code. Regarding the disk structure, a contact type double-sided recording type and an air sandwich type double-sided recording type are also possible.

スパッタリング装置は通常用いられる装置で良いので図
示せずも、まず真空槽内に基板1を入れ高真空(< 1
0−’ Pa)に排気後、同一真空槽内で基板1に干渉
膜21,22、光磁気記録媒体膜3、保護膜4を成膜す
る0例えばSiN膜を干渉膜とする場合、Ar+N、ふ
ん囲気中、Si、N、ターゲットを使用した反応性スパ
ッタリングにより屈折率nの低い(この場合n=1.7
5)SiN膜21を成膜し、その後反応ガスN2を遮断
し、屈折率nの高い(この場合n−2,2)SiN膜2
2を成膜する。また例えば屈折率nの高いSiN膜を先
に成膜し、その後反応ガスN2を入れ屈折率nの低い5
iNWi!を成膜することも可能である。
The sputtering device may be a commonly used device, so although it is not shown in the figure, the substrate 1 is first placed in a vacuum chamber,
After evacuation to 0-' Pa), the interference films 21 and 22, the magneto-optical recording medium film 3, and the protective film 4 are formed on the substrate 1 in the same vacuum chamber.For example, when using a SiN film as the interference film, Ar+N, By reactive sputtering using Si, N, and a target in an ambient atmosphere, the refractive index n is low (in this case n = 1.7
5) Form the SiN film 21, then block the reaction gas N2, and form the SiN film 2 with a high refractive index n (n-2,2 in this case).
2 is formed into a film. Alternatively, for example, a SiN film with a high refractive index n is formed first, and then a reactive gas N2 is introduced into the SiN film with a low refractive index n.
iNWi! It is also possible to form a film.

このような方法で得られたディスクの膜厚と反射率の関
係を第2図、第3図に示す。スパッタリング・ターゲッ
トはSi、N、とじ、誘電体膜はSiN膜とした場合の
例である。第2図は、干渉膜21を屈折率nの低いSi
N膜(500人)、干渉膜22を屈折率nの高いStN
@とし、その上に光磁気記録媒体膜3の膜厚を900人
、保護膜4を屈折率nの低い5iNIll!(1000
人)としたディスク構造で、干渉膜22の膜厚をパラメ
ータとしたとき、ディスク反射率は20〜43%の間で
変化する。第3図は、干渉膜21を屈折率nの高いSi
N膜、干渉膜22を屈折率nの低いSiN膜(1000
人)、光磁気記録媒体膜3の膜厚を400人、保護膜4
を屈折率nの高いSiN膜(600人)としたディスク
構造で、干渉膜21の膜厚をパラメータとしたとき、デ
ィスク反射率は44〜70%の間で変化する。このよう
に、簡単なディスク構造及び成膜方法で様々な反射率を
得ることができ、また、SiO,SiO□、AIN、A
l0N、5iAI!N、5iAi’ONなどの他の誘電
体膜についても同様のことが言える。
The relationship between the film thickness and reflectance of the disk obtained by such a method is shown in FIGS. 2 and 3. This is an example in which the sputtering target is Si, N, or oxide, and the dielectric film is a SiN film. In FIG. 2, the interference film 21 is made of Si having a low refractive index n.
N film (500 people), the interference film 22 is StN with a high refractive index n.
@, and on top of that, the thickness of the magneto-optical recording medium film 3 is 900mm, and the protective film 4 is 5iNIll with a low refractive index n! (1000
When the film thickness of the interference film 22 is used as a parameter in a disc structure with a disc structure of 100%, the disc reflectance changes between 20% and 43%. In FIG. 3, the interference film 21 is made of Si having a high refractive index n.
The N film and the interference film 22 are replaced by a SiN film with a low refractive index n (1000
400 people), the film thickness of the magneto-optical recording medium film 3 is 400 people, and the protective film 4 is
In a disk structure in which a SiN film (600) having a high refractive index n is used, and when the thickness of the interference film 21 is used as a parameter, the disk reflectance changes between 44 and 70%. In this way, various reflectances can be obtained with a simple disk structure and film formation method, and SiO, SiO□, AIN, A
l0N, 5iAI! The same can be said of other dielectric films such as N, 5iAi'ON, etc.

〔発明の効果〕〔Effect of the invention〕

本発明による光磁気ディスクは、干渉膜を屈折率の異な
る同種の誘電体膜2層の積層より成り、更に光磁気記録
媒体膜、保護膜を積層した簡単な構造であり、また、干
渉膜はスパッタリング中の反応ガスの有無で容易に屈折
率の大きく異なる2層を形成できるため、その干渉膜の
膜厚を変化させることで、光の干渉により様々な反射率
を得ることができる。
The magneto-optical disk according to the present invention has a simple structure in which the interference film is a stack of two dielectric films of the same type with different refractive indexes, and a magneto-optical recording medium film and a protective film are further stacked. Since two layers with greatly different refractive indexes can be easily formed depending on the presence or absence of a reactive gas during sputtering, various reflectances can be obtained by light interference by changing the thickness of the interference film.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による光磁気ディスクの断面図、第2図
、第3図は干渉膜の膜厚変化に伴うディスク反射率変化
の例とその時のディスク構造である。 1・・・基板 3・・・光磁気記録媒体膜(RE −TM)4・・・保
護膜 5・・・UV樹脂膜 21.22・・・第1.第2の干渉膜である。
FIG. 1 is a sectional view of a magneto-optical disk according to the present invention, and FIGS. 2 and 3 are examples of changes in disk reflectance due to changes in the thickness of the interference film and the structure of the disk at that time. 1... Substrate 3... Magneto-optical recording medium film (RE-TM) 4... Protective film 5... UV resin film 21.22... 1st. This is the second interference film.

Claims (1)

【特許請求の範囲】[Claims] 光磁気記録媒体膜の両面に誘電体膜が積層され、該媒体
膜に光ビームを照射して情報の記録、再生および消去を
行う光磁気ディスクにおいて、両誘電体膜はいずれもス
パッタリングにより成膜される金属酸化物、あるいは金
属窒化物からなる膜であって、両誘電体膜のうち基体上
に成膜される誘電体膜を屈折率の異なる第1及び第2の
誘電体膜の積層構成より成る干渉膜とすることを特徴と
する光磁気ディスク。
In magneto-optical disks, in which dielectric films are laminated on both sides of a magneto-optical recording medium film, and information is recorded, reproduced, and erased by irradiating the medium film with a light beam, both dielectric films are formed by sputtering. A film made of a metal oxide or a metal nitride, in which the dielectric film formed on the substrate has a laminated structure of a first dielectric film and a second dielectric film having different refractive indexes. A magneto-optical disk characterized in that it has an interference film consisting of.
JP22380390A 1990-08-25 1990-08-25 Magneto-optical disk Pending JPH04105232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22380390A JPH04105232A (en) 1990-08-25 1990-08-25 Magneto-optical disk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22380390A JPH04105232A (en) 1990-08-25 1990-08-25 Magneto-optical disk

Publications (1)

Publication Number Publication Date
JPH04105232A true JPH04105232A (en) 1992-04-07

Family

ID=16803967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22380390A Pending JPH04105232A (en) 1990-08-25 1990-08-25 Magneto-optical disk

Country Status (1)

Country Link
JP (1) JPH04105232A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000030087A1 (en) * 1998-11-13 2000-05-25 Matsushita Electric Industrial Co., Ltd. Magneto-optic (mo) recording medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000030087A1 (en) * 1998-11-13 2000-05-25 Matsushita Electric Industrial Co., Ltd. Magneto-optic (mo) recording medium

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