JPH0410528A - Vapor deposition device - Google Patents
Vapor deposition deviceInfo
- Publication number
- JPH0410528A JPH0410528A JP11061190A JP11061190A JPH0410528A JP H0410528 A JPH0410528 A JP H0410528A JP 11061190 A JP11061190 A JP 11061190A JP 11061190 A JP11061190 A JP 11061190A JP H0410528 A JPH0410528 A JP H0410528A
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- coil cover
- susceptor
- gas
- coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007740 vapor deposition Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 claims abstract description 45
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000001947 vapour-phase growth Methods 0.000 claims description 19
- 239000007789 gas Substances 0.000 abstract description 47
- 239000012495 reaction gas Substances 0.000 abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 13
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000002411 adverse Effects 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、エピタキシャル成長等の気相化学反応によっ
てウェーハの表面上に薄膜層を形成するための気相成長
装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a vapor phase growth apparatus for forming a thin film layer on the surface of a wafer by a vapor phase chemical reaction such as epitaxial growth.
（従来の技術）
第２図に従来の気相成長装置を示すか、該装置はベルジ
ャ１０１とベースプレート１０２とで囲まれる空間（反
応室）Ｓ内に、回転自在に支持されたペデスタル１０４
、該ペデスタル１０４に支持されたサセプタ１０５、該
サセプタ１０５の下方に配される加熱コイル１０６、該
加熱コイル１０６を被う有底二重筒状のコイルカバー１
０７等を収容して構成され、前記ペデスタル１０４には
反応ガスを供給する反応ガス供給管１０３か接続されて
いた。又、前記ベースプレート１０２にはバージガス供
給口１１７及びガス排出口１２３か開口しており、バー
ジガス供給口１１７にはバージガス供給管１１８か、ガ
ス排出口１２３にはガス排出ｖ１２４かそれぞれ接続さ
れていた。(Prior Art) A conventional vapor phase growth apparatus is shown in FIG.
, a susceptor 105 supported by the pedestal 104, a heating coil 106 disposed below the susceptor 105, and a coil cover 1 in the shape of a double cylinder with a bottom that covers the heating coil 106.
07, etc., and a reaction gas supply pipe 103 for supplying reaction gas was connected to the pedestal 104. Further, a barge gas supply port 117 and a gas discharge port 123 are opened in the base plate 102, and a barge gas supply pipe 118 is connected to the barge gas supply port 117, and a gas discharge port 124 is connected to the gas discharge port 123, respectively.
而して、前記サセプタ１０５上にセットされたウェーハ
Ｗは加熱コイル１０６によって所定温度に加熱され、反
応ガス供給管１０３を経て供給される反応ガスは、その
上部に配置された不図示の複数の開口部から図示矢印に
て示すように流出し、気相化学反応によフてウェーハＷ
上には所要の薄膜層か形成される。The wafer W set on the susceptor 105 is heated to a predetermined temperature by the heating coil 106, and the reaction gas supplied through the reaction gas supply pipe 103 is supplied to a plurality of unillustrated gases arranged above the susceptor 105. It flows out from the opening as shown by the arrow in the figure, and the wafer W is washed away by a gas phase chemical reaction.
Any desired thin film layer is formed thereon.
ところて、加熱コイル１０６は一般には導電性の高い銅
（ＣＵ）等の金属で構成され、反応ガスは腐食性の強い
塩素系ガス等であることか多いため、バージガス供給管
１１Ｂから供給されるＨ２ 、Ｎ２ 、Ａｒ等の不活性
ガス（以下、バージガスと称する）によって反応ガスか
加熱コイル１０６に触れてこれを損傷せしめるのを防い
ており、この効果を高めるべく前記コイルカバー１０７
によて加熱コイル１０６を被うようにしている。尚、反
応ガス及びバージガスはガス排出口１２３からガス排出
管１２４を経て反応室Ｓ外に排出される。By the way, the heating coil 106 is generally made of a highly conductive metal such as copper (CU), and the reaction gas is often a highly corrosive chlorine gas or the like, so it is supplied from the barge gas supply pipe 11B. Inert gas (hereinafter referred to as barge gas) such as H2, N2, Ar, etc. is used to prevent reaction gas from coming into contact with the heating coil 106 and damaging it, and in order to enhance this effect, the coil cover 107 is used.
The heating coil 106 is covered by the heating coil 106. Incidentally, the reaction gas and the barge gas are discharged from the gas discharge port 123 to the outside of the reaction chamber S via the gas discharge pipe 124.
（光明か解決しようとする課題）
しかしなから、従来の気相成長装置にあっては、コイル
カバー１０７か加熱コイル１０６を下まて完全に被って
いないため、反応ガスか加熱コイル１０６の下部空間部
に廻り込み、反応ガスか加熱コイル１０６に触れるのを
完全に防ぐことかできないという問題かあった。(Problem to be solved by Kouaki) However, in conventional vapor phase growth apparatuses, the coil cover 107 does not completely cover the lower part of the heating coil 106, so that the reactant gas is absorbed from the lower part of the heating coil 106. There was a problem in that it was impossible to completely prevent the reactant gas from entering the space and coming into contact with the heating coil 106.
又、加熱コイル１０６の放電によって該加熱コイル１０
６の一部か損傷し、内部を流れる冷却水か漏れ出た場合
、これを検知する手段かなく、ガス排出口１２３かベル
ジャ１０１より高い位置まて立ち上っている場合には、
漏れ出た水の一部かベルジャ１０１内に溜り、更に水位
か上昇し、反応ガス供給管１０３の開口部から逆流し、
反応ガス供給管１０３を経て他の気相成長装置に達し、
他の気相成長装置に悪影響を及ぼすという問題もあった
。Further, due to the electric discharge of the heating coil 106, the heating coil 10
6 is damaged and the cooling water flowing inside leaks out, there is no way to detect this, and if the gas outlet 123 or the belljar 101 is raised to a higher position,
Some of the leaked water collects in the bell jar 101, the water level further rises, and it flows back from the opening of the reaction gas supply pipe 103.
It reaches another vapor phase growth apparatus via the reaction gas supply pipe 103,
There was also the problem that other vapor phase growth apparatuses were adversely affected.
本発明は上記問題に鑑みてなされたもので、その目的と
する処は、反応ガスの加熱コイルへの接触を確実に防い
て加熱コイルの耐久性向上を図るとともに、漏水を素早
く検知することかできる気相反応装置を提供することに
ある。The present invention was made in view of the above problems, and its purpose is to improve the durability of the heating coil by reliably preventing reaction gas from coming into contact with the heating coil, and to quickly detect water leakage. The objective is to provide a gas phase reactor that can
（課題を解決するための手段）
上記目的を達成すべく本発明は、ベルジャとベースプレ
ートとで囲まれる空間内に、ペデスタルに支持されたサ
セプタ、該サセプタの下方に配される加熱コイル、該加
熱コイルを被う有底二重筒状のコイルカバー等を収容し
て成る気相成長装置において、前記コイルカバーの外円
筒下端面を前記ベースプレートに当接せしめ、同コイル
カバーの内円筒下端面とベースプレートとの間に所定の
隙間を形成したことをその特徴とする。(Means for Solving the Problems) In order to achieve the above object, the present invention provides a susceptor supported by a pedestal, a heating coil disposed below the susceptor, a heating coil disposed below the susceptor, and a heating coil arranged below the susceptor in a space surrounded by a bell jar and a base plate. In a vapor phase growth apparatus that accommodates a bottomed double cylindrical coil cover or the like that covers a coil, the lower end surface of the outer cylinder of the coil cover is brought into contact with the base plate, and the lower end surface of the inner cylinder of the coil cover is brought into contact with the lower end surface of the inner cylinder of the coil cover. Its feature is that a predetermined gap is formed between it and the base plate.
（作用）
本発明によれば、反応ガスの加熱コイル下方への廻り込
みかコイルカバーによって確実に防かれるため、反応ガ
スの加熱コイルへの接触か防がれ、加熱コイルの腐食か
抑えられてその耐久性か高められる。この場合、バージ
ガス圧を反応ガス圧よりも幾分高くしておけば、バージ
ガスはコイルカバーの内周下端面とベースプレートとの
間に形成された隙間からコイルカバー外に流出し、サセ
プタとコイルカバー上面との間の隙間を流れるため、こ
の隙間への反応ガスの流入か防かれコイルカバー上面の
反応ガスによる汚染が防がれる。(Function) According to the present invention, since the coil cover reliably prevents the reaction gas from going under the heating coil, the reaction gas is prevented from coming into contact with the heating coil, and corrosion of the heating coil is suppressed. Its durability is enhanced. In this case, if the barge gas pressure is made somewhat higher than the reaction gas pressure, the barge gas will flow out of the coil cover through the gap formed between the lower inner end surface of the coil cover and the base plate, and the susceptor and coil cover Since it flows through the gap between the coil cover and the top surface, the reaction gas is prevented from flowing into this gap, and the top surface of the coil cover is prevented from being contaminated by the reaction gas.
又、本発明によれば、加熱コイルの放電によって′これ
の一部か損傷し、内部の冷却水か漏れ出ても、漏れ出た
水はバージガス排出口からバージガス排出管へ流れ、少
なくとも従来のように反応ガス供給管を経て他の気相成
長装置側へ達することかないため、他の気相成長装置か
悪影響を受けることかない。尚、バージガス排出口に接
続されるバージガス排出管に漏水検知器を設ければ、漏
水を稟早く検知することかてきる。Furthermore, according to the present invention, even if a part of the heating coil is damaged due to electric discharge and internal cooling water leaks out, the leaked water flows from the barge gas outlet to the barge gas outlet pipe, at least in the conventional manner. Since the reactant gas does not reach other vapor phase growth apparatuses through the reaction gas supply pipe, other vapor phase growth apparatuses are not adversely affected. Incidentally, if a water leakage detector is provided on the barge gas discharge pipe connected to the barge gas discharge port, water leakage can be detected quickly.
（実施例）
以下に本発明の一実施例を添付図面に基づいて説明する
。(Example) An example of the present invention will be described below based on the accompanying drawings.
第１図は本発明に係る気相成長装置の構成図であり、該
装置は石英製のベルジャｌとステンレス製のベースプレ
ート２とで囲まれる反応室Ｓ、内に石英製のペデスタル
４．該ペデスタル４の上端に水平に、且つ気密分離可能
に接合されて支持されたリング状のカーボン製サセプタ
５、該サセプタ５の下方に配される銅製の高周波加熱コ
イル６、該高周波加熱コイル６を被う有底二重筒状の石
英製コイルカバー７等を収容して構成されている。尚、
前記ペデスタル４内には反応ガス供給管３が貫通してお
り、該反応ガス供給管３の上端は前記サセプタ５の中央
部に開口している。FIG. 1 is a configuration diagram of a vapor phase growth apparatus according to the present invention, which includes a reaction chamber S surrounded by a quartz bell jar and a stainless steel base plate 2, and a quartz pedestal 4. A ring-shaped carbon susceptor 5 horizontally and supported on the upper end of the pedestal 4 in a hermetically separable manner; a copper high-frequency heating coil 6 disposed below the susceptor 5; It is constructed by accommodating a quartz coil cover 7 etc. in the shape of a double cylinder with a bottom. still,
A reaction gas supply pipe 3 passes through the pedestal 4, and the upper end of the reaction gas supply pipe 3 opens into the center of the susceptor 5.
ところで、前記ペデスタル４は、前記ベースプレート２
の中央部に設けられた筒状の支持部材８及び該支持部材
８の下面を被う蓋部材９にボールベアリング１０．１１
を介して回転自在に支持されており、これはモータ１２
の回転動力をギヤ１３．１４を経て受け、前記サセプタ
５と共に一定の速度て回転せしめられる。尚、前記蓋部
材９にはバージガス供給管１５が接続されている。By the way, the pedestal 4 is connected to the base plate 2.
Ball bearings 10 and 11 are attached to a cylindrical support member 8 provided in the center of
is rotatably supported via a motor 12.
It receives rotational power through gears 13 and 14, and is rotated together with the susceptor 5 at a constant speed. Incidentally, a barge gas supply pipe 15 is connected to the lid member 9.
更に、前記支持部材８の上端内周部には前記ペデスタル
４の外周を被うリング状の遮熱部材１６か嵌着されてお
り、該遮熱部材１６には通気孔１７か貫設されている。Further, a ring-shaped heat shielding member 16 that covers the outer periphery of the pedestal 4 is fitted to the inner peripheral portion of the upper end of the support member 8, and a ventilation hole 17 is provided through the heat shielding member 16. There is.
而して、前記コイルカバー７は図示のように加熱コイル
６の下方まで完全に被っており、その外円筒下端面はベ
ースプレート２に当接支持されており、同コイルカバー
７の内円筒下端面と前記遮熱部材１６との間には所定の
隙間δ□か形成されている。As shown in the figure, the coil cover 7 completely covers the lower part of the heating coil 6, and its outer cylindrical lower end surface is supported in contact with the base plate 2, and the inner cylindrical lower end surface of the coil cover 7 is supported by the base plate 2. A predetermined gap δ□ is formed between and the heat shielding member 16.
一方、前記ベースプレート２にはバージガス供給管１８
か貫通しており、その先部は加熱コイル６を支持する支
持板１９に穿設された孔１９ａ内に臨んでいる。又、ベ
ースプレート２には、コイルカバ−７にて囲まれる空間
ｓ２内に開口するバージガス排出口２ｏか形成されてお
り、このバージガス排出口２０にはバージガス排出管２
１か接続されている。尚、このバージガス排出管２１の
途中には不図示の漏水検知器が設けられている。On the other hand, the base plate 2 has a barge gas supply pipe 18.
The tip of the heating coil 6 extends through the hole 19a formed in the support plate 19 that supports the heating coil 6. Further, a barge gas discharge port 2o is formed in the base plate 2 and opens into a space s2 surrounded by the coil cover 7, and the barge gas discharge port 20 has a barge gas discharge pipe 2
1 or connected. Note that a water leakage detector (not shown) is provided in the middle of the barge gas discharge pipe 21.
更に、ベースプレート２のコイルカバー７の外側の部位
には大径の反応ガス排出口２２が開口しており、この反
応ガス排出口２２には反応ガス排出管２３か接続されて
いる。Further, a large-diameter reactive gas exhaust port 22 is opened at a portion of the base plate 2 outside the coil cover 7, and a reactive gas exhaust pipe 23 is connected to the reactive gas exhaust port 22.
次に、本気相成長装置の作用を説明する。Next, the operation of the serious vapor phase growth apparatus will be explained.
サセプタ５上にセットされたウェーハＷは、高周波加熱
コイル６によって所定の温度に加熱されなから、前述の
ようにペデスタル４か回転されることによってこれと共
に一定速度て回転せしめられる。このとき１反応室Ｓ１
内には反応ガス供給管３から塩素系の反応ガスが供給さ
れ、コイルカバー７内の空間Ｓ２内にはバージガス供給
管１５．１８から水素ガス等のバージガスか供給される
。尚、一方のバージガス供給管１５から供給されるバー
ジガスは遮熱部材１６に形成された通気孔１７がら空間
Ｓ２内に流入し、他方のバージガス供給管１８から供給
されるバージガスは加熱コイル６に向かって噴出される
。The wafer W set on the susceptor 5 is not heated to a predetermined temperature by the high-frequency heating coil 6, but is rotated at a constant speed together with the pedestal 4 by rotating it as described above. At this time, 1 reaction chamber S1
A chlorine-based reaction gas is supplied inside the coil cover 7 from a reaction gas supply pipe 3, and a barge gas such as hydrogen gas is supplied into the space S2 inside the coil cover 7 from a barge gas supply pipe 15.18. Note that the verge gas supplied from one verge gas supply pipe 15 flows into the space S2 through the vent hole 17 formed in the heat shield member 16, and the verge gas supplied from the other verge gas supply pipe 18 flows toward the heating coil 6. It is squirted.
而して、ウェーハＷの表面上には気相化学反応によって
所要の薄膜層が形成される。Thus, a required thin film layer is formed on the surface of the wafer W by a vapor phase chemical reaction.
以上において、本実施例ては、加熱コイル６はその下端
がベースプレート２まて延びるコイルカバー７によって
その全体か被われるため、反応ガスの加熱コイル６の下
方への廻り込みかコイルカバー７によって確実に防かれ
、反応ガスの加熱コイル６への接触か防がれ、加熱コイ
ル６の腐食か抑えられてその耐久性か高められる。この
場合、バージガス圧を反応ガス圧よりも幾分高くしてお
けば、バージガスは第１図に矢印にて示すようにコイル
カバー７の内円筒下端面と遮熱部材１６との間に形成さ
れた前記隙間δ１からコイルカバー７外に流出し、ペデ
スタル４とコイルカバー７との間に形成されるリング状
の隙間δ２及びサセプタ５とコイルカバー７との間の隙
間δ３を経て反応室Ｓ１へと流れるため、隙間δ３への
反応ガスの流入か防がれ、コイルカバ−７上面の反応ガ
スによる汚染か防かれる。In this embodiment, since the lower end of the heating coil 6 is entirely covered by the coil cover 7 extending to the base plate 2, the coil cover 7 ensures that the reaction gas does not flow downward into the heating coil 6. This prevents reaction gas from coming into contact with the heating coil 6, suppresses corrosion of the heating coil 6, and increases its durability. In this case, if the purge gas pressure is made somewhat higher than the reaction gas pressure, the purge gas will be formed between the lower end surface of the inner cylinder of the coil cover 7 and the heat shielding member 16, as shown by the arrow in FIG. It flows out of the coil cover 7 through the gap δ1, passes through the ring-shaped gap δ2 formed between the pedestal 4 and the coil cover 7, and the gap δ3 between the susceptor 5 and the coil cover 7, and enters the reaction chamber S1. Therefore, the reaction gas is prevented from flowing into the gap δ3, and the upper surface of the coil cover 7 is prevented from being contaminated by the reaction gas.
又１本実施例によれば、加熱コイル６の放電によってこ
れの一部が損傷し、内部の冷却水か漏れ出ても、漏れ出
た水はバージガス排出口２ｏからバージガス排出管２１
へ流れ、少なくとも従来のように反応ガス供給管３を経
て他の気相成長装置側へ達することかないため１他の気
相成長装置か悪影響を受けることかない。更に、この場
合には、漏水はバージガス排出管２１に設けられた漏水
検知器によって素早く検知されるため、漏水対策を迅速
に講することかできる。Furthermore, according to this embodiment, even if a part of the heating coil 6 is damaged due to discharge and internal cooling water leaks out, the leaked water is drained from the barge gas outlet 2o to the barge gas exhaust pipe 21.
At least, unlike the conventional method, the gas does not flow through the reaction gas supply pipe 3 to reach other vapor phase growth apparatuses, so the other vapor phase growth apparatuses are not adversely affected. Furthermore, in this case, since water leakage is quickly detected by the water leakage detector provided in the barge gas discharge pipe 21, water leakage countermeasures can be taken quickly.
（発明の効果）
以上の説明で明らかな如く、本発明によれば、ベルジャ
とベースプレートとで囲まれる空間内に、ペデスタルに
支持されたサセプタ、該サセプタの下方に配される加熱
コイル、該加熱コイルを被う有底二重筒状のコイルカバ
ー等を収容して成る気相成長装置において、前記コイル
カバーの外円筒下端面を前記ベースプレートに当接せし
め、同コイルカバーの内円筒下端面とベースプレートと
の間に所定の隙間を形成したため、反応ガスの加熱コイ
ルへの接触を確実に防いて加熱コイルの耐久性向上を図
るとともに、漏水を素早く検知することかてきるという
効果か得られる。(Effects of the Invention) As is clear from the above description, according to the present invention, a susceptor supported by a pedestal, a heating coil disposed below the susceptor, and a heating coil disposed below the susceptor are provided in a space surrounded by a bell jar and a base plate. In a vapor phase growth apparatus that accommodates a bottomed double cylindrical coil cover or the like that covers a coil, the lower end surface of the outer cylinder of the coil cover is brought into contact with the base plate, and the lower end surface of the inner cylinder of the coil cover is brought into contact with the lower end surface of the inner cylinder of the coil cover. Since a predetermined gap is formed between the heating coil and the base plate, it is possible to reliably prevent reaction gas from coming into contact with the heating coil, thereby improving the durability of the heating coil, and also being able to quickly detect water leakage.
第１図は本発明に係る気相成長装置の構成図、第２図は
従来の気相成長装置の断面図である。
ｌ・・・ベルジャ、２・・・ベースプレート、４・−・
ペデスタル、５・・・サセプタ、６・・・高周波加熱コ
イル、７・・・コイルカバ−１２０・・・バージガス排
出口、Ｓｌ・・・反応室、Ｓ２・・・空間、δ１．δ２
．δ３・・・隙間。
特許出願人 信越半導体株式会社FIG. 1 is a block diagram of a vapor phase growth apparatus according to the present invention, and FIG. 2 is a sectional view of a conventional vapor phase growth apparatus. l... bell jar, 2... base plate, 4...
Pedestal, 5... Susceptor, 6... High frequency heating coil, 7... Coil cover 120... Barge gas outlet, Sl... Reaction chamber, S2... Space, δ1. δ2
．． δ3... Gap. Patent applicant Shin-Etsu Semiconductor Co., Ltd.
Claims (3)
、ペデスタルに支持されたサセプタ、該サセプタの下方
に配される加熱コイル、該加熱コイルを被う有底二重筒
状のコイルカバー等を収容して成る気相成長装置におい
て、前記コイルカバーの外円筒下端面を前記ベースプレ
ートに当接せしめ、同コイルカバーの内円筒下端面とベ
ースプレートとの間に所定の隙間を形成したことを特徴
とする気相成長装置。(1) A susceptor supported by a pedestal, a heating coil placed below the susceptor, a bottomed double cylindrical coil cover covering the heating coil, etc. are housed in the space surrounded by the bell jar and the base plate. In the vapor phase growth apparatus, the lower end surface of the outer cylinder of the coil cover is brought into contact with the base plate, and a predetermined gap is formed between the lower end surface of the inner cylinder of the coil cover and the base plate. Vapor phase growth equipment.
密分離可能に接合し、サセプタと前記コイルカバーとの
間に所定の隙間を形成したことを特徴とする請求項１記
載の気相成長装置。(2) The vapor phase growth apparatus according to claim 1, wherein the outer periphery of the pedestal and the inner periphery of the susceptor are joined to each other so as to be airtightly separable, and a predetermined gap is formed between the susceptor and the coil cover.
囲まれる空間内に開口するバージガス排出口を形成した
ことを特徴とする請求項１記載の気相成長装置。(3) The vapor phase growth apparatus according to claim 1, wherein the base plate is provided with a barge gas discharge port that opens into a space surrounded by the coil cover.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2110611A JP2593726B2 (en) | 1990-04-27 | 1990-04-27 | Vapor phase growth apparatus and vapor phase growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2110611A JP2593726B2 (en) | 1990-04-27 | 1990-04-27 | Vapor phase growth apparatus and vapor phase growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0410528A true JPH0410528A (en) | 1992-01-14 |
| JP2593726B2 JP2593726B2 (en) | 1997-03-26 |
Family
ID=14540215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2110611A Expired - Fee Related JP2593726B2 (en) | 1990-04-27 | 1990-04-27 | Vapor phase growth apparatus and vapor phase growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2593726B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5595241A (en) * | 1994-10-07 | 1997-01-21 | Sony Corporation | Wafer heating chuck with dual zone backplane heating and segmented clamping member |
| JPH09283450A (en) * | 1996-04-15 | 1997-10-31 | Toshiba Mach Co Ltd | Vapor phase growth system |
| JP2002280306A (en) * | 2001-03-21 | 2002-09-27 | Japan Science & Technology Corp | Substrate rotating / heating apparatus, film forming apparatus and analyzing apparatus using the same |
| US20100132615A1 (en) * | 2008-12-02 | 2010-06-03 | Tokyo Electron Limited | Film deposition apparatus |
| JP2012164889A (en) * | 2011-02-08 | 2012-08-30 | Mitsui Eng & Shipbuild Co Ltd | Vapor-phase growth apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57184213A (en) * | 1981-05-08 | 1982-11-12 | Kokusai Electric Co Ltd | Vapor growth device for semiconductor |
| JPS62201927U (en) * | 1986-06-13 | 1987-12-23 | ||
| JPH01220433A (en) * | 1988-02-29 | 1989-09-04 | Nec Corp | Vapor growth apparatus |
-
1990
- 1990-04-27 JP JP2110611A patent/JP2593726B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57184213A (en) * | 1981-05-08 | 1982-11-12 | Kokusai Electric Co Ltd | Vapor growth device for semiconductor |
| JPS62201927U (en) * | 1986-06-13 | 1987-12-23 | ||
| JPH01220433A (en) * | 1988-02-29 | 1989-09-04 | Nec Corp | Vapor growth apparatus |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5595241A (en) * | 1994-10-07 | 1997-01-21 | Sony Corporation | Wafer heating chuck with dual zone backplane heating and segmented clamping member |
| JPH09283450A (en) * | 1996-04-15 | 1997-10-31 | Toshiba Mach Co Ltd | Vapor phase growth system |
| JP2002280306A (en) * | 2001-03-21 | 2002-09-27 | Japan Science & Technology Corp | Substrate rotating / heating apparatus, film forming apparatus and analyzing apparatus using the same |
| US20100132615A1 (en) * | 2008-12-02 | 2010-06-03 | Tokyo Electron Limited | Film deposition apparatus |
| JP2010135420A (en) * | 2008-12-02 | 2010-06-17 | Tokyo Electron Ltd | Film deposition apparatus |
| US9103030B2 (en) * | 2008-12-02 | 2015-08-11 | Tokyo Electron Limited | Film deposition apparatus |
| JP2012164889A (en) * | 2011-02-08 | 2012-08-30 | Mitsui Eng & Shipbuild Co Ltd | Vapor-phase growth apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2593726B2 (en) | 1997-03-26 |
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