JPH04105372A - Microbridge type Josephson junction device - Google Patents
Microbridge type Josephson junction deviceInfo
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- JPH04105372A JPH04105372A JP2221180A JP22118090A JPH04105372A JP H04105372 A JPH04105372 A JP H04105372A JP 2221180 A JP2221180 A JP 2221180A JP 22118090 A JP22118090 A JP 22118090A JP H04105372 A JPH04105372 A JP H04105372A
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- film
- josephson junction
- superconducting
- type josephson
- microbridge
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Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は超伝導トランジスタ、赤外検知器、ジョセフソ
ンミキサ、5QUID、ジョセフソンコンピュータ等に
利用a来るマイクロブリッジ型ジョセフソン接合素子に
関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a microbridge type Josephson junction element that can be used in superconducting transistors, infrared detectors, Josephson mixers, 5QUIDs, Josephson computers, and the like.
(従来の技術及びその問題点)
従来、酸化物超伝導材料からなるマイクロブリッジ型ジ
ョセフソン素子は第4図に示す構成をとるのが一般的で
ある。即ち基板1上に微細加工された超伝導膜2があり
、その上に電極5がある構成のものである。中央にある
超伝導膜のくびれ部がブリッジ部4である。(Prior Art and its Problems) Conventionally, a microbridge type Josephson element made of an oxide superconducting material generally has the configuration shown in FIG. 4. That is, the superconducting film 2 has a microfabricated superconducting film 2 on a substrate 1, and an electrode 5 is placed on top of the superconducting film 2. The constricted part of the superconducting film in the center is the bridge part 4.
通常マイクロブリッジ型素子は、2つの幅広い超伝導膜
(バンク部)が幅の狭い部分で繋がれ、薄膜−層で出来
ている。2つのバンク部を繋ぐブリッジ部のリンク長を
コヒーレント長より短いか、少なくとも同じ程度なら、
この様な膜のくびれ型弱結合はジョセフソン素子として
振舞う。Typically, a microbridge type device is made of thin film layers, with two wide superconducting films (bank parts) connected by a narrow part. If the link length of the bridge section connecting the two bank sections is shorter than the coherent length, or at least about the same, then
Such a waist-type weak coupling in the film behaves as a Josephson device.
平面上で短いリンク長を作製するのが困難な場合、第5
図に示す様な段差を有する基板を用いてその段差でブリ
ッジ部4を作る方法も用いられる(準平面型マイクロブ
リッジ)。If it is difficult to create a short link length on a plane, the fifth
A method is also used in which a substrate having a step as shown in the figure is used and the bridge portion 4 is formed using the step (quasi-planar microbridge).
酸化物超伝導体を用いてマイクロブリッジ型ジョセフソ
ン接合素子を作る場合、ブリッジ部のリンク長は理論上
数10人程度でなければならず、現在の電子線やX線リ
ソグラフィー技術をもってしてもせいぜい数100人が
限界である。When making a microbridge-type Josephson junction device using an oxide superconductor, the link length of the bridge section should theoretically be about several tens of people, and even with current electron beam and X-ray lithography technology, The limit is a few hundred people at most.
実際にYBa*Cu−0−a等の酸化物超伝導体を用い
たマイクロブリッジ型ジョセフソン接合は、リンク長が
4〜20μm程度が多い。これは数10人に比べ極めて
大きく、粒界による弱結合が形成れていると考えられる
。従って粒界による接合を有しないNb系等と比べ、非
常に劣化し易い材料である。バンク部はブリッジ部に比
べ幅が大きい為、多数の粒界の平均的総和で決定され、
エツジ部が大きなダメージを受けたとしても、全体的劣
化は特に問題にならない。Actually, microbridge type Josephson junctions using oxide superconductors such as YBa*Cu-0-a often have a link length of about 4 to 20 μm. This is extremely large compared to several tens of people, and it is thought that weak bonds are formed by grain boundaries. Therefore, it is a material that deteriorates much more easily than Nb-based materials that do not have bonding through grain boundaries. Since the bank part is wider than the bridge part, it is determined by the average sum of many grain boundaries.
Even if the edges are severely damaged, overall deterioration is not a problem.
しかしながら、接合部はブリッジ幅に対して数個の粒子
しか存在いない為、個々の粒界の劣化が直接接合の劣化
へと影響してしまう。However, since there are only a few grains in the joint with respect to the bridge width, the deterioration of individual grain boundaries directly affects the deterioration of the joint.
更に微細加工技術を用いて超伝導膜のエツチングを行う
際、マイクロブリッジ部は幅が狭い為、サイドエツチン
グ等の影響を大きく受ける。即ちドライエツチングでは
エツチング粒子の衝撃を受けたり、ウェットエツチング
では強力なエツチング溶液の影響を受は易い。Furthermore, when etching a superconducting film using microfabrication technology, the microbridge portion is narrow in width and is therefore greatly affected by side etching. That is, in dry etching, it is easily affected by the impact of etching particles, and in wet etching, it is easily affected by a strong etching solution.
従って、マイクロブリッジ部の超伝導特性の劣化、組成
変動等によるブリッジ部特性の消失が生じ易いといった
問題がある。Therefore, there are problems in that the superconducting properties of the microbridge section tend to deteriorate and the bridge section properties tend to disappear due to compositional fluctuations and the like.
特に酸化物超伝導体はその酸素量によって構造が変化し
易く、他の元素比は変わらなくとも酸素の比が変化した
だけで、半導体或は絶縁体に変質し易い材料である。In particular, the structure of oxide superconductors tends to change depending on the amount of oxygen in them, and even if the ratio of other elements remains the same, even if the ratio of oxygen changes, it is a material that easily transforms into a semiconductor or an insulator.
この様に劣化し易い材料である為素子の耐久性が悪いと
いう問題もある。Since the material is easily deteriorated in this way, there is also the problem that the durability of the element is poor.
従って、本発明の目的は上記従来技術の問題点を解決し
、耐久性等に優れたマイクロブリッジ型ジョセフソン接
合素子を提供することである。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve the above problems of the prior art and provide a microbridge type Josephson junction element with excellent durability.
(問題点を解決する為の手段) 上記目的は以下の本発明によって達成される。(Means for solving problems) The above objects are achieved by the present invention as described below.
即ち、本発明は、基体上に超伝導膜が形成され且つブリ
ッジ部上には金属膜が積層されていることを特徴とする
マイクロブリッジ型ジョセフソン接合素子である。That is, the present invention is a microbridge type Josephson junction element characterized in that a superconducting film is formed on a base and a metal film is laminated on a bridge portion.
(作 用)
本発明によれば、基体上に超伝導膜が形成され且つブリ
ッジ部上には金属膜が積層されている構成である為、微
細加工の際或は素子を動作させる際、最も劣化し易いブ
リッジ部の劣化を抑えることが可能となる。特に粒界に
よる弱結合を利用した酸化物超伝導体を用いた場合、ブ
リッジ部は更に劣化し易くなる為有効である。(Function) According to the present invention, since the superconducting film is formed on the base and the metal film is laminated on the bridge portion, it is most convenient when performing microfabrication or operating the device. It is possible to suppress deterioration of the bridge portion, which is prone to deterioration. This is particularly effective when using an oxide superconductor that utilizes weak bonds due to grain boundaries, since the bridge portion is more likely to deteriorate.
特にブリッジ部をAu、 Pt、 Pd、 Re、 I
n又はCu等の酸素を通しに(い金属で覆うことにより
酸素量変化を抑えることも可能となる。Especially the bridge part is made of Au, Pt, Pd, Re, I
It is also possible to suppress changes in the amount of oxygen by covering it with a metal that allows oxygen to pass through, such as n or Cu.
更に金属膜の幅が、ブリッジ部のリンク長の1.5倍以
上、好ましくは2〜2000倍とすることで、ブリッジ
部の劣化を最小限にくいとめることが出来る。Further, by making the width of the metal film 1.5 times or more, preferably 2 to 2000 times, the link length of the bridge portion, deterioration of the bridge portion can be minimized.
又、段差を用いて効率良くマイクロブリッジ部を形成す
る場合でも同様にブリッジ部を保護することが出来る。Furthermore, even when a microbridge is efficiently formed using a step, the bridge can be protected in the same way.
更にその段差を超伝導膜の厚さの約1〜5倍にすること
で、ブリッジ部の保護効果を損なうことのないマイクロ
ブリッジ型ジョセフソン接合素子とすることが出来る。Further, by making the step difference approximately 1 to 5 times the thickness of the superconducting film, it is possible to obtain a microbridge type Josephson junction element without impairing the protective effect of the bridge portion.
本発明において基板上に形成する超伝導膜は好ましくは
酸化物であり、且つその化学組成をA−B−C−Oと表
した場合、Aが、La、 Ce、 Pr、 Nd、 P
m、Sm、 Sc、 Eu%Gd、 Tb、 Dy、
Ho、 Er、 Tm、Yb、 Lu、Bi、 Tl及
びYより成る群より選ばれた一種以上の元素、BがBa
、 Ce、 Sr及びPbより成る群より選ばれた一種
以上の元素、Cが■、Ti%Cr、 Mn、 Fe、N
i、 (:o、 Ag、 Cd及びCuより成る群より
選ばれた一種以上の元素であることが好ましい。In the present invention, the superconducting film formed on the substrate is preferably an oxide, and when its chemical composition is expressed as A-B-C-O, A is La, Ce, Pr, Nd, P
m, Sm, Sc, Eu%Gd, Tb, Dy,
one or more elements selected from the group consisting of Ho, Er, Tm, Yb, Lu, Bi, Tl and Y, B is Ba
, Ce, one or more elements selected from the group consisting of Sr and Pb, C is ■, Ti%Cr, Mn, Fe, N
It is preferable that it is one or more elements selected from the group consisting of i, (:o, Ag, Cd, and Cu).
(実施例) 以下実施例を用いて本発明を更に詳細に説明する。(Example) The present invention will be explained in more detail below using Examples.
実施例1
先ず、第1図に示す様に基板1 [5rTiO−(10
0)面を用いた)上に3個の電子ビーム源からEr、
Ba及びCuを酸素含有雰囲気下、10−’ 〜10−
”Torrで約5000人蒸着させた。基板温度は約4
00℃とした。膜は堆積したままでは非晶質であったの
で、酸素ガス中で約900℃で熱処理しEr−Ba−C
u−〇型超伝導膜2を製作した(第1図a)。Example 1 First, as shown in FIG. 1, a substrate 1 [5rTiO-(10
0) Er from three electron beam sources on the
Ba and Cu in an oxygen-containing atmosphere, 10-' to 10-
``Approximately 5,000 people deposited at Torr.The substrate temperature was approximately 4
The temperature was 00°C. Since the film was amorphous as deposited, it was heat-treated at approximately 900°C in oxygen gas to form Er-Ba-C.
A u-〇 type superconducting film 2 was fabricated (Fig. 1a).
この様にして得た超伝導膜2はX線回折及び電子顕微鏡
観察の結果、斜方晶構造のC軸が膜面に対して垂直方向
に揃った多結晶配向膜であった。As a result of X-ray diffraction and electron microscope observation, the superconducting film 2 thus obtained was found to be a polycrystalline oriented film in which the C axis of the orthorhombic structure was aligned perpendicular to the film surface.
次にRHMIF法で金属膜3 (Auを用いた)を0.
5mm幅で形成した後、レジストコート、露光及び現像
を行い、Arによるイオンミリングで超伝導膜2と金属
膜3を同時にエツチングして、8μmX8μmのブリッ
ジ部4を含むマイクロブリッジ型ジジセフソン素子を形
成した(第1図b)。Next, a metal film 3 (using Au) was formed using the RHMIF method.
After forming a film with a width of 5 mm, resist coating, exposure and development were performed, and the superconducting film 2 and metal film 3 were simultaneously etched by ion milling using Ar to form a microbridge-type Jiji Sefson element including a bridge portion 4 of 8 μm x 8 μm. (Figure 1b).
次にCr−Au電極5を付け(第1図c)、四端子法で
電気抵抗を測定したところ約80にで電気抵抗がOにな
った。Jcは20にでl O’ AlCrdであった。Next, a Cr--Au electrode 5 was attached (FIG. 1c), and the electrical resistance was measured by the four-probe method, and the electrical resistance became O at about 80°C. Jc was 20 and lO'AlCrd.
更に50GHzのミリ波を照射したところシャピロステ
ップが観測され、ジョセフソン接合を形成していること
がわかった。Furthermore, when 50 GHz millimeter waves were irradiated, a Shapiro step was observed, indicating that a Josephson junction was formed.
ブリッジ部に金属膜のない素子を同様に作成したところ
、Tcは30に、Jcは20にで10’A / c m
”であったが、ミリ波照射してもシャピロステップは
観測されなかった。When a device without a metal film on the bridge part was created in the same way, Tc was set to 30, Jc was set to 20, and the output was 10'A/cm.
”, but no Shapiro step was observed even with millimeter wave irradiation.
実施例2
基板中央に1μmの段差のあるMgO単結晶基板1を用
いて第2図に示す様な素子を作成した。Example 2 A device as shown in FIG. 2 was fabricated using an MgO single crystal substrate 1 having a step of 1 μm in the center of the substrate.
超伝導膜2はクラスターイオンビーム法で形成したY−
Ba−Cu−0膜である。条件は基板温度400℃でC
u用のクラスターイオンビームガンの加速電圧は4KV
、イオン化電流200mA、Ba用のクラスターイオン
ビームガンの加速電圧はIKV、イオン化電流50mA
、Y用のクラスターイオンビームガンの加速電圧は2K
V、イオン化電流は100mAとし、堆積速度をY:
Ba: Cu= 1 : 2:3モル比となる様に制御
した。膜厚はsoo。The superconducting film 2 is a Y-
It is a Ba-Cu-0 film. Conditions are substrate temperature 400℃
The acceleration voltage of the cluster ion beam gun for u is 4KV.
, ionization current 200mA, acceleration voltage of cluster ion beam gun for Ba is IKV, ionization current 50mA
, the acceleration voltage of the cluster ion beam gun for Y is 2K.
V, the ionization current is 100 mA, and the deposition rate is Y:
The molar ratio of Ba:Cu was controlled to be 1:2:3. The film thickness is soo.
人とした。As a person.
900℃で1時間の熱処理を行った後、金属膜3をイオ
ンビームスパッタ法で1mm幅で形成した。材料はpt
を用いた。After heat treatment at 900° C. for 1 hour, a metal film 3 with a width of 1 mm was formed by ion beam sputtering. Material is PT
was used.
実施例1と同様に微細加工した。ブリッジ部は幅101
.Lm、長さは301.Lmとした。4端子測定したと
ころTc=85Kを示した。Fine processing was carried out in the same manner as in Example 1. The width of the bridge part is 101
.. Lm, length is 301. It was set to Lm. A 4-terminal measurement showed Tc=85K.
次に光応答を見る為、この素子を4.5Kに冷却し、ブ
リッジ部にHe−Neレーザー5mWを100Hz周波
数で10μm5ec、時間照射したところ、電圧信号が
得られ光−電圧変換が8来ることがわかった。Next, in order to observe the photoresponse, this element was cooled to 4.5K and the bridge section was irradiated with a He-Ne laser of 5mW at a frequency of 100Hz for 10μm and 5ec for a period of time, a voltage signal was obtained and a light-voltage conversion of 8 was obtained. I understand.
実施例3
2μmの段差6aと6bとを有するMgO基板を用いて
、RFマグネストロンスパッタ法でB1−3r−Ca−
Cu IlIを形成した。後熱処理(820℃、2時間
)を行った後、Auをマスク蒸着で蒸着し、エツチング
して第3図に示す様に加工した。この様にして2つのジ
ョセフソン接合からなる超伝導量子干渉デバイスを実現
することが出来る。Example 3 B1-3r-Ca-
CuII was formed. After post-heat treatment (820° C., 2 hours), Au was deposited by mask evaporation, etched and processed as shown in FIG. In this way, a superconducting quantum interference device consisting of two Josephson junctions can be realized.
このデバイスを液体窒素を用いて77Kに冷却し、量子
干渉デバイスとして動作させる。この際には、引出し電
極21.22を通して信号の検出を行う。This device is cooled to 77 K using liquid nitrogen and operated as a quantum interference device. At this time, signals are detected through the extraction electrodes 21 and 22.
(発明の効果)
以上説明した様に、本発明によって以下の効果が奏され
る。(Effects of the Invention) As explained above, the present invention provides the following effects.
(1)ブリッジ部に金属が積層されている為に、微細加
工の際或は素子を動作させる際、最も劣化し易いブリッ
ジ部の劣化を抑えることが出来る。(1) Since metal is laminated on the bridge portion, deterioration of the bridge portion, which is most likely to deteriorate during microfabrication or when operating an element, can be suppressed.
(2)特に酸化物超伝導体は酸素量で変質し易い為、酸
素を通しに(い金属で覆うことで酸素量変化を抑えるこ
とも可能となる。(2) Since oxide superconductors are particularly susceptible to deterioration due to the amount of oxygen, changes in the amount of oxygen can be suppressed by covering them with a metal that allows oxygen to pass through.
(3)超伝導体の劣化を抑える為素子の歩留り並びに耐
久性が向上する。(3) Since the deterioration of the superconductor is suppressed, the yield and durability of the device are improved.
第1図は実施例1の概念図、第2図は実施例2の概念図
、第3図は実施例3の概念図、第4図は従来のマイクロ
ブリッジ型ジョセフソン接合の形態を示した図、第5図
は準平面型マイクロブリッジを示す図である。
1:基板
2.21,22:超伝導膜
3:金属膜
4ニブリッジ部
5:電極
6.6a、6b:段差
第1図
(a)
第2図
第3図
第4図
第5図Figure 1 is a conceptual diagram of Example 1, Figure 2 is a conceptual diagram of Example 2, Figure 3 is a conceptual diagram of Example 3, and Figure 4 shows the form of a conventional microbridge Josephson junction. FIG. 5 is a diagram showing a quasi-planar microbridge. 1: Substrate 2. 21, 22: Superconducting film 3: Metal film 4 Bridge portion 5: Electrodes 6.6a, 6b: Steps Fig. 1 (a) Fig. 2 Fig. 3 Fig. 4 Fig. 5
Claims (6)
は金属膜が積層されていることを特徴とするマイクロブ
リッジ型ジョセフソン接合素子。(1) A microbridge-type Josephson junction device, characterized in that a superconducting film is formed on a substrate and a metal film is laminated on a bridge portion.
−Oと表すとき、Aは、La、Ce、Pr、Nd、Pm
、Sm、Sc、Eu、Gd、Tb、Dy、Ho、Er、
Tm、Yb、Lu、Bi、Tl及びYより成る群より選
ばれた一種以上の元素、BはBa、Ca、Sr及びPb
より成る群より選ばれた一種以上の元素、CはV、Ti
、Cr、Mn、Fe、Ni、Co、Ag、Cd及びCu
より成る群より選ばれた一種以上の元素である請求項1
に記載のマイクロブリッジ型ジョセフソン接合素子。(2) The superconducting film is an oxide and has a chemical composition of A-B-C.
When expressed as -O, A is La, Ce, Pr, Nd, Pm
, Sm, Sc, Eu, Gd, Tb, Dy, Ho, Er,
One or more elements selected from the group consisting of Tm, Yb, Lu, Bi, Tl and Y, B is Ba, Ca, Sr and Pb
One or more elements selected from the group consisting of, C is V, Ti
, Cr, Mn, Fe, Ni, Co, Ag, Cd and Cu
Claim 1 is one or more elements selected from the group consisting of
Microbridge type Josephson junction device described in .
から成る群より選ばれた一種以上の金属である請求項1
又は2に記載のマイクロブリッジ型ジョセフソン接合素
子。(3) Metal film is Au, Pt, Pd, Re, In and Cu
Claim 1 is one or more metals selected from the group consisting of
Or the micro bridge type Josephson junction element according to 2.
以上である請求項1〜3のいずれかに記載のマイクロブ
リッジ型ジョセフソン接合素子。(4) The microbridge type Josephson junction element according to any one of claims 1 to 3, wherein the width of the metal film is 1.5 times or more the link length of the bridge portion.
超伝導弱結合を有する超伝導膜を含んで構成される請求
項1〜4のいずれかに記載のマイクロブリッジ型ジョセ
フソン接合素子。(5) The microbridge type Josephson junction device according to any one of claims 1 to 4, wherein the base body is a substrate having a step, and the step portion includes a superconducting film having a superconducting weak bond.
る請求項5に記載のマイクロブリッジ型ジョセフソン接
合素子。(6) The microbridge type Josephson junction device according to claim 5, wherein the height of the step is about 1 to 5 times the thickness of the superconducting film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2221180A JPH04105372A (en) | 1990-08-24 | 1990-08-24 | Microbridge type Josephson junction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2221180A JPH04105372A (en) | 1990-08-24 | 1990-08-24 | Microbridge type Josephson junction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04105372A true JPH04105372A (en) | 1992-04-07 |
Family
ID=16762735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2221180A Pending JPH04105372A (en) | 1990-08-24 | 1990-08-24 | Microbridge type Josephson junction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04105372A (en) |
-
1990
- 1990-08-24 JP JP2221180A patent/JPH04105372A/en active Pending
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