JPH0410577A - Method for manufacturing GaAs solar cells - Google Patents
Method for manufacturing GaAs solar cellsInfo
- Publication number
- JPH0410577A JPH0410577A JP2113153A JP11315390A JPH0410577A JP H0410577 A JPH0410577 A JP H0410577A JP 2113153 A JP2113153 A JP 2113153A JP 11315390 A JP11315390 A JP 11315390A JP H0410577 A JPH0410577 A JP H0410577A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- gaas
- electrode
- type
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims abstract description 11
- 210000004027 cell Anatomy 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 19
- 239000010408 film Substances 0.000 claims description 13
- 239000000243 solution Substances 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 241000127225 Enceliopsis nudicaulis Species 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は太陽電池、特にＧａＡｓ系エピタキシャル層を
有するＧａＡｓ系太陽電池に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to solar cells, particularly to GaAs solar cells having a GaAs epitaxial layer.
［従来の技術］
ＧａＡｓ系を用いた太陽電池は、ＧａＡｓの禁制帯幅か
太陽、電池の理想とされる１、５ｅＶに近い１．４３ｅ
Ｖであることから、他の多くの太陽電池の中でも最も高
い変換効率を示す。その構造の典型的な例を第２図に示
す。[Prior art] Solar cells using GaAs have a forbidden band width of 1.43 eV, which is close to 1.5 eV, which is the ideal band width for solar cells.
V, it exhibits the highest conversion efficiency among many other solar cells. A typical example of its structure is shown in FIG.
ｎ型ＧａＡｓ基板１上にｎ型ＧａＡｓ−［−ピタキシャ
ル層２．ｐ型ＧａＡｓエピタキンヤル層３を成長する。An n-type GaAs-[-pitaxial layer 2. A p-type GaAs epitaxial layer 3 is grown.
このＧａＡｓエピタキシャル層３上に更ニｐ型ｃ ａ
Ａｌ２Ａ ｓエピタキシャル層４を成長し、その一部を
エツチングによりくし形に除去して、そこにｐ型ＧａＡ
ｓエピタキシャル層３に接触する表面電極６を取り付け
る。そして表面に反射防止膜６を被覆し、ＧａＡｓ基板
１の裏面に裏面電極７を全面に取り付ける。入射した太
陽光によって、ｐｎ接合に発生した電力をｐ型ＧａＡｓ
エピタキシャル層３上に形成した表面電極５と、基板１
下に設けた裏面電極７とを通じて取り出す。On this GaAs epitaxial layer 3, further p-type c a
An Al2A s epitaxial layer 4 is grown, a part of it is removed in a comb shape by etching, and a p-type GaA layer is grown there.
s Attach a surface electrode 6 in contact with the epitaxial layer 3. Then, the front surface is coated with an antireflection film 6, and a back electrode 7 is attached to the entire back surface of the GaAs substrate 1. The power generated in the p-n junction by the incident sunlight is transferred to the p-type GaAs
The surface electrode 5 formed on the epitaxial layer 3 and the substrate 1
It is taken out through the back electrode 7 provided below.
ここで、ｐ型Ｇａ ＡρＡｓエピタキ／ヤル層４および
反射防止膜６を形成する理由を説明する。Here, the reason for forming the p-type GaAρAs epitaxial layer 4 and the antireflection film 6 will be explained.
まず、ｐ型ＧａＡｓエピタキシャル層３の表面には不飽
和結合（ダングリングボンド）による表面準位が高密度
で存在するので、発生したキャリアが表面電極５に取り
込まれる前に表面で再結合し、エネルギの変換効率か著
しく低下してしまう。そこで、表面準位を消滅させ、表
面へのキャリア流出を防くため、表面近傍の小数キャリ
ア濃度を減することを目的としてｐ型ＧａＡｓエピタキ
シャル層３の上に上記したｐ型ＧａＡρＡｓエピタキシ
ャル層を窓材として設ける構造がとられる。First, since surface states due to unsaturated bonds (dangling bonds) exist at a high density on the surface of the p-type GaAs epitaxial layer 3, generated carriers recombine on the surface before being taken into the surface electrode 5. Energy conversion efficiency will drop significantly. Therefore, in order to eliminate the surface states and prevent carriers from flowing out to the surface, the above-mentioned p-type GaAρAs epitaxial layer is formed as a window on the p-type GaAs epitaxial layer 3 in order to reduce the minority carrier concentration near the surface. A structure is adopted in which it is provided as a material.
次に、ｐ型ＧａＡＱＡｓエピタキシャル層４の保護及び
入射光の反射を極力少なくすることを目的として、ｐ型
ＧａＡＬＡｓエピタキシャル層４上に５ｒｓＮａ等の太
陽光に対し透明かつ耐久性のある材、質の薄膜、即ち上
記した反射防止膜６か設けられる。Next, for the purpose of protecting the p-type GaAQAs epitaxial layer 4 and minimizing the reflection of incident light, a material or quality that is transparent and durable to sunlight, such as 5rsNa, is placed on the p-type GaALAs epitaxial layer 4. A thin film, ie, the antireflection film 6 described above, is provided.
このような構造にすることで、変換効率２０％以上のＧ
ａＡｓ系太陽電池が得られている。With this structure, G with a conversion efficiency of 20% or more
AAs solar cells have been obtained.
［発明が解決しようとする課題］
ところで、地上に到達する太陽光の波長は短波長側の０
．３μｍから長波長側は数μｍまである。[Problem to be solved by the invention] By the way, the wavelength of sunlight reaching the ground is 0 on the short wavelength side.
．． The wavelength ranges from 3 μm to several μm on the long wavelength side.
すなわち、太陽電池は０．３μｍより長波長の光を活用
できる。しかしなから、窓材としてのＧａＡ３Ａｓは、
禁制帯幅を大きくするため極力Ａｐ混晶比の高いものを
使うが（通常混晶比ｚ０８）、それでも禁制帯幅は２．
１ｅＶ（間接型、直接遷移ならば２．４ｅｖ）、波長で
０．６μｍ（直接遷移で０．５μｍ）である。それ以上
の高いエネルギをもつ光に対しては、ＧａＡρＡｓ窓材
のバンド間遷移による吸収のため、ＧａＡｓセルに届く
光の効率が悪くなってしまう。その結果、変換効率が落
ちる。That is, solar cells can utilize light with wavelengths longer than 0.3 μm. However, GaA3As as a window material is
In order to increase the forbidden band width, a material with a high Ap mixed crystal ratio is used as much as possible (normal mixed crystal ratio z08), but the forbidden band width is still 2.
1 eV (2.4 eV for indirect type, direct transition) and 0.6 μm in wavelength (0.5 μm for direct transition). For light with higher energy than that, the efficiency of the light reaching the GaAs cell deteriorates due to absorption due to band-to-band transition of the GaAρAs window material. As a result, conversion efficiency decreases.
このためＧａＡｆｆＡｓ窓材は極力薄くするが、薄くす
ると、表面へ流出するキャリアが増え、そのキャリアは
ＧａＡｌ２Ａｓの表面準位によって再結合してしまい、
変換効率を下げることになる。For this reason, the GaAffAs window material is made as thin as possible, but as it becomes thinner, more carriers flow out to the surface, and the carriers are recombined by the surface states of GaAl2As.
This will reduce the conversion efficiency.
本発明の目的は、ダングリングボンドをなくすことによ
って、前記した従来技術の欠点を解消し、窓材をつけな
くても高い変換効率が得られるＧａＡｓ系太陽電池の製
造方法を提供することにある。An object of the present invention is to provide a method for manufacturing a GaAs-based solar cell that eliminates the drawbacks of the prior art described above by eliminating dangling bonds and provides high conversion efficiency without the need for a window material. .
また、本発明の目的は、窓材がある場合に、窓材を極力
薄くしても、表面再結合を抑え高い変換効率が得られる
ＧａＡｓ系太陽電池の製造方法を提供するものである。Another object of the present invention is to provide a method for manufacturing a GaAs-based solar cell in which surface recombination can be suppressed and high conversion efficiency can be obtained even when the window material is made as thin as possible.
［課題を解決するための手段］
本発明の要旨は、ＧａＡｓ系セル表面を硫化物を含む溶
液で処理することによりタングリングホントを無（すこ
とにある。[Means for Solving the Problems] The gist of the present invention is to eliminate tangling by treating the surface of a GaAs-based cell with a solution containing sulfide.
即ち、本発明は、太陽光が入射する側の電極を取り付け
たセル表面にＧａＡｓあるいはＧａＡＱＡｓエピタキシ
ャル層を有したセル構造をもつＧａＡｓ系太陽電池の製
造方法において、前記セル表面となるエピタキシャル層
を形成して電極を取り付けた後、このエピタキシャル層
表面を硫化物を含む溶液で処理し、さらに反射防止膜で
被覆したものである。That is, the present invention provides a method for manufacturing a GaAs solar cell having a cell structure having a GaAs or GaAQAs epitaxial layer on the surface of the cell on which an electrode is attached on the side where sunlight enters. After the electrodes were attached, the surface of this epitaxial layer was treated with a solution containing sulfide, and then coated with an antireflection film.
また、本発明は、太陽光が入射する側の電極を取り付け
たセル表面にＧａＡｌＡｓより成る薄膜エピタキシャル
層を窓材として有したセル構造をもつＧａＡｓ系太陽電
池の製造方法において、前記窓材となるＧａＡ（ｌＡｓ
より成る薄膜エビタキシャル層を形成して電極を取り付
けた後、このエピタキシャル層表面を硫化物を含む溶液
で処理し、さらに反射防止膜で被覆したものである。The present invention also provides a method for manufacturing a GaAs-based solar cell having a cell structure in which a thin film epitaxial layer made of GaAlAs is provided as a window material on the surface of the cell on which an electrode is attached on the side where sunlight enters. GaA(lAs
After a thin epitaxial layer is formed and electrodes are attached, the surface of this epitaxial layer is treated with a solution containing sulfide, and then coated with an antireflection film.
そして、上記硫化物を含む溶液が、（ＮＨ４）。The solution containing the sulfide is (NH4).
Ｓ、に、Ｓ、ＮＨ４Ｈ３，Ｃ５，Ｓ ” ４Ｈ，Ｏ，Ｎ
ａ、Ｓ、ＮｉＳ、ＬｉＳの水溶液のいずれか１つまたは
２つ以上を選択的に混合した水溶液であることが好まし
い。S, ni, S, NH4H3,C5,S ” 4H,O,N
It is preferable that the aqueous solution is a selective mixture of one or more of aqueous solutions of a, S, NiS, and LiS.
また、上記反射防止膜がＳｉＯｘ、 Ｓ Ｉ ３Ｎｉ
ｐＳＧ、ＴａｔＯｓのいずれかの材質から成っているこ
とが好ましい。Further, the anti-reflection film is made of SiOx, S I 3Ni
It is preferable that the material is made of pSG or TatOs.
［作用］
ＧａＡｓ単体の表面準位を減少させる手段として、硫化
物で表面を処理する方法が報告されている。例えばＢ、
Ｊ、 Ｓｋｒｏｍｍｅらは、ＧａＡｓ表面にＮａ、Ｓ
を塗布することにより、表面にＡｒ＋レーザを照射した
時のフォトルミネセンス強度が１〜３桁増加することを
報告している（Ａｐｐ（２，ｐｈｙｓ、Ｌｅｔｔ、５１
（１９８７）２０２２） 、これはＧａＡｓ表面のダン
グリングボンドがＳ（硫黄）と結合し、表面準位が減少
したためと考えられている。[Operation] A method of treating the surface with sulfide has been reported as a means of reducing the surface level of GaAs alone. For example, B.
J. Skromme et al.
It has been reported that by coating the surface, the photoluminescence intensity increases by one to three orders of magnitude when the surface is irradiated with Ar+ laser (App (2, phys, Lett, 51
(1987) 2022), this is thought to be because dangling bonds on the GaAs surface combine with S (sulfur) and the surface level decreases.
本発明はこの処理方法に着目したものであり、この方法
を特にＧａＡｓ系太陽電池に適用したものである。The present invention focuses on this treatment method, and applies this method particularly to GaAs solar cells.
ＧａＡｌＡｓからなる窓材を有していない場合には、Ｇ
ａＡｓ系セル表面を硫化物を含む溶液で処理することに
よりダングリングボンドが無くなる。If you do not have a window material made of GaAlAs,
Dangling bonds are eliminated by treating the surface of an aAs-based cell with a solution containing sulfide.
また、ＧａＡｌＡｓからなる窓材を有している場合でも
、ＧａＡρＡｓ窓材表面を硫化物を含む溶液で処理する
と、ＧａＡｌＡｓ窓材表面のダングリングボンドが無く
なる。従って、窓材を極力薄くしても表面準位による再
結合が抑制される。Furthermore, even if the window material is made of GaAlAs, if the surface of the GaAρAs window material is treated with a solution containing sulfide, dangling bonds on the surface of the GaAlAs window material will disappear. Therefore, even if the window material is made as thin as possible, recombination due to surface states is suppressed.
［実施例コ
以下、本発明の実施例を第１図〜第３図を用いて説明す
る。[Embodiment] Hereinafter, an embodiment of the present invention will be explained using FIGS. 1 to 3.
本発明の効果を確認するため、第１図、第２図第３図に
示す構造をもつ３種のＧａＡｓ系太陽電池で、本発明方
法を適用したものと、適用しないものとを製作した。こ
れらをそれぞれ、Ａタイプ、Ｂタイプ、Ｃタイプと称す
る。ＡタイプはＧａＡｌＡｓ工ピタキシヤル層からなる
窓材（窓層）のないもの、Ｂタイプは窓層のある典型的
なもの、Ｃタイプはｐ型ＧａＡρＡ ｓ ／ ｎ型Ｇａ
ＡｌＡｓというセル構造をもつ試作品である。In order to confirm the effects of the present invention, three types of GaAs solar cells having the structures shown in FIGS. 1, 2, and 3 were fabricated, one to which the method of the present invention was applied and one to which it was not applied. These are called A type, B type, and C type, respectively. Type A is without a window material (window layer) made of a GaAlAs pitaxial layer, type B is a typical type with a window layer, and type C is p-type GaAρA s / n-type Ga.
This is a prototype product with a cell structure called AlAs.
そして、これらを放射スペクトルＡＭＩ（ＡｉｒＭａｓ
ｓの略で、地上で太陽が天頂にある場合の太陽光を示す
）における変換効率を調べた。いずれ゛の構造において
も、本発明方法を適用したものの方が高い変換効率を得
た。高効率となる理由はＧａＡｓ表面のダングリングボ
ンドが本実施例の処理によって削減し、表面再結合がお
きないためである。These are then combined into a radiation spectrum AMI (AirMas).
The conversion efficiency was investigated at 1000 s (s), which indicates sunlight when the sun is at its zenith on the ground. In either structure, higher conversion efficiency was obtained in the structure to which the method of the present invention was applied. The reason for the high efficiency is that dangling bonds on the GaAs surface are reduced by the treatment of this example, and surface recombination does not occur.
ここで、まずＡタイプ、Ｂタイプについて製作法の詳細
を述べる。Here, first, details of the manufacturing method for Type A and Type B will be described.
Ｓｉをドープしたｎ型ＧａＡｓ基板１（キャリア濃度Ｉ
Ｘ １０”ｃｍ−、厚さ３００μｍ）を用い、液相成
長法（Ｌ Ｐ Ｅ）でｎ型ＧａＡｓエピタキシャル層２
（Ｓｉドープ、キャリア濃度２Ｘ１０”ｃｍ−、厚さ３
０μｍ）及びｐ型ＧａＡｓ：ｃピタキシャル層３（Ｚｎ
ドープ、キャリア濃度ｌＸ １０”ｃｍ−、厚さ２μｍ
）を成長した。Si-doped n-type GaAs substrate 1 (carrier concentration I
An n-type GaAs epitaxial layer 2 was formed by liquid phase epitaxy (LPE) using
(Si doped, carrier concentration 2X10"cm-, thickness 3
0 μm) and p-type GaAs:c pitaxial layer 3 (Zn
Dope, carrier concentration lX 10"cm-, thickness 2μm
) grew.
第１図に示すＡタイプの場合は、太陽光が入射する側の
セル表面となるｐ型ＧａＡｓエピタキシャル層３上に表
面電極５を形成した。In the case of type A shown in FIG. 1, a surface electrode 5 was formed on the p-type GaAs epitaxial layer 3, which was the cell surface on the side into which sunlight was incident.
第２図に示すＢタイプの場合は、セル表面となるｐ型Ｇ
ａＡｓエピタキシャル層３上にｐ型ＧａＡＱＡｓエピタ
キシャル層４（Ｚｎドープ、 Ａ！２混晶比０．８．
キャリア濃度ｌＸｌ０”ｃｍ−厚さＯ，１μｍ）を窓層
として成長した後、電極蒸着部のみＧａＡａＡｓエピタ
キシャル層４を選択的に除去し、その上に表面電極５を
形成した。ｐ型ＧａＡｓエピタキシャル層３上の電極材
にはＡｕ−Ｚｎを用い、選択的に蒸着した後、基板１の
襄全面にＡｕ−Ｇｅ−Ｎ １−Ａｕｉｉ極材から成る裏
面電極７を蒸着し、４００℃×２分Ｎ、中でアロイした
。In the case of type B shown in Figure 2, the p-type G
A p-type GaAQAs epitaxial layer 4 (Zn doped, A!2 mixed crystal ratio 0.8.
After growing a window layer with a carrier concentration of 1×10” cm and a thickness of 0, 1 μm, the GaAaAs epitaxial layer 4 was selectively removed from the electrode evaporation area, and a surface electrode 5 was formed thereon. The p-type GaAs epitaxial layer After selectively vapor depositing Au-Zn as the electrode material on 3, a back electrode 7 made of Au-Ge-N 1-Auii electrode material was deposited on the entire sleeve of the substrate 1, and heated at 400°C for 2 minutes. N, alloyed inside.
一方、第３図に示すＣタイプ構造の場合は、ｎ型ＧａＡ
ｓ基板１上にｎ型ＧａＡρＡｓエピタキシャル層８（Ｓ
ｉ ドープ、ＡＱ混晶比０，４． キャリア濃度２Ｘ
１０Ｉ７ｃｍ−、厚さ５μｍ）、セル表面となるｐ型Ｇ
ａＡＬＡｓエピタキシャル層９（Ｚｎドープ、ＡＣ混晶
比０．４．キャリア濃度Ｉ Ｘ １０”ｃｍ−、厚さ２
μｍ）を成長し、その上に表面電極５を形成した。ｐ型
ＧａＡ１２ＡＳエピタキシャル層９上の電極材にはＡｕ
−Ｚｎを用い、選択的に蒸着した後、基板１の裏金面に
ＡｕＧｅ−Ｎｉ−Ａｕ４４極材からなる裏面電極７を蒸
着し、４００℃×２分Ｎ！雰囲気中でアロイしたー。On the other hand, in the case of the C type structure shown in Fig. 3, n-type GaA
An n-type GaAρAs epitaxial layer 8 (S
i doped, AQ mixed crystal ratio 0,4. Carrier concentration 2X
10I7cm-, thickness 5μm), p-type G that becomes the cell surface
aALAs epitaxial layer 9 (Zn doped, AC mixed crystal ratio 0.4, carrier concentration I x 10"cm-, thickness 2
μm) was grown, and a surface electrode 5 was formed thereon. The electrode material on the p-type GaA12AS epitaxial layer 9 is Au.
-Zn was selectively vapor-deposited, and then a back electrode 7 made of AuGe-Ni-Au44 electrode material was vapor-deposited on the back metal surface of the substrate 1, and heated at 400°C for 2 minutes at N! Alloyed in the atmosphere.
このようにしてＡタイプ、Ｂタイプ、Ｃタイプにそれぞ
れ電極を形成した後、ＨＦ：Ｈ，０＝１＝１０溶液で酸
化膜を除去した。以上の工程を経たウェハをＡタイプ、
Ｂタイプ、Ｃタイプそれぞれ４枚ずつ準備し、２枚はＮ
ａ、Ｓ溶液で表面を処理し、他２枚は未処理のまま反射
防止膜６ （ＳｉＯｌ、２００人）を形成した。反射防
止膜６のＮａ、Ｓの処理は、ウェハにＮ ａ 、Ｓ水溶
液を滴下し、スピンナでウェハを回転させることにより
行った。After forming electrodes for the A type, B type, and C type in this manner, the oxide film was removed using a HF:H, 0=1=10 solution. Wafers that have gone through the above steps are A type,
Prepare 4 pieces each of type B and type C, and 2 pieces are N.
a. The surface was treated with an S solution, and the other two sheets were left untreated to form an antireflection film 6 (SiOl, 200 people). The antireflection film 6 was treated with Na and S by dropping an aqueous Na and S solution onto the wafer and rotating the wafer with a spinner.
製造したＧａＡｓ系太陽電池の変換効率を放射スペクト
ルＡＭ１の条件で測定した。その結果は、下表の通りで
あり、いずれの場合もＮ ａ 、Ｓ処理によって大幅に
効率が向上した。The conversion efficiency of the manufactured GaAs solar cell was measured under the conditions of radiation spectrum AM1. The results are shown in the table below, and in all cases the efficiency was significantly improved by the Na and S treatments.
表
（％値は平均値である）
なお、上記実施例では液相成長法でエピタキシャル層を
成長した場合について述へたが、本発明はこれに限定さ
れるのもではなく、有機金属熱分解法等の気相成長法で
成長させた場合についても適用することができる。Table (% values are average values) In the above examples, the case where the epitaxial layer was grown by the liquid phase growth method was described, but the present invention is not limited to this. It can also be applied to cases where the growth is performed by a vapor phase growth method such as a method.
［発明の効果］ 本発明によれば次の効果を発揮する。[Effect of the invention] According to the present invention, the following effects are achieved.
（１）Ｇ ａ Ａ ＱＡ ｓの窓層を有していなくても
、ＧａＡ９Ａｓ窓付構造と同等以上の効率を得ることが
できる。このため、製造プロセスが簡単であるばかつか
、安価で高効率のＧａＡｓ太陽電池を提供できる。(1) Efficiency equivalent to or higher than that of a structure with a GaA9As window can be obtained even without a window layer of GaAQAs. Therefore, it is possible to provide a GaAs solar cell with a simple manufacturing process, low cost, and high efficiency.
（２）また、ＧａＡＱＡｓ窓付構造の場合でも、ＧａＡ
（Ａｓ表面での表面再結合を減少できるので、窓材を極
力薄くしても、表面再結合を有効に抑えることかできる
ため、変換効率を更に高くすることができる。(2) Also, even in the case of a GaAQAs windowed structure, GaAQAs
(Since the surface recombination on the As surface can be reduced, even if the window material is made as thin as possible, the surface recombination can be effectively suppressed, so that the conversion efficiency can be further increased.
第１図は本発明を適用したＧａＡρＡｓ窓層のないＧａ
Ａｓ系太陽電池（Ａタイプ）の構造例を示す断面図、第
２図は同じく典型的なＧａＡｓ系太陽電池（Ｂタイプと
呼ぶ）の構造例を示す断面図、第３図は本発明を適用す
るために試作したＧａＡ（！Ａｓ太陽電池（Ｃタイプ）
の構造例を示す断面図である。
１はｎ型ＧａＡｓ基板、２はｎ型ＧａＡｓエピタキシャ
ル層、３はｐ型ＧａＡｓエピタキシャル層、４ ｉ；！
ｐ型Ｇ ａ ＡＬＡ ｓエピタキシャル層（窓層）５
は表面電極、６は反射防止膜、７は裏面電極、８はｎ型
ＧａＡ（！Ａｓエピタキシャル層、９はｐ型ＧａＡＱＡ
ｓエピタキシャル層である。Figure 1 shows GaAρAs without a window layer to which the present invention is applied.
A cross-sectional view showing an example of the structure of an As-based solar cell (type A), FIG. 2 is a cross-sectional view showing an example of the structure of a typical GaAs-based solar cell (referred to as type B), and FIG. 3 is a structure to which the present invention is applied. A GaA (!As solar cell (C type)) was prototyped to
FIG. 2 is a cross-sectional view showing a structural example of. 1 is an n-type GaAs substrate, 2 is an n-type GaAs epitaxial layer, 3 is a p-type GaAs epitaxial layer, 4 i;!
p-type Ga ALA s epitaxial layer (window layer) 5
is a surface electrode, 6 is an antireflection film, 7 is a back electrode, 8 is an n-type GaA (!As epitaxial layer, 9 is a p-type GaAQA
s epitaxial layer.
Claims (1)
ＧａＡｓあるいはＧａＡｌＡｓエピタキシャル層を有し
たセル構造をもつＧａＡｓ系太陽電池の製造方法におい
て、 前記セル表面となるエピタキシャル層を形成して前記電
極を取り付けた後、 このエピタキシャル層表面を硫化物を含む溶液で処理し
、 さらに反射防止膜で被覆したことを特徴とするＧａＡｓ
系太陽電池の製造方法。 ２、太陽光が入射する側の電極を取り付けたセル表面に
ＧａＡｌＡｓより成る薄膜エピタキシャル層を窓材とし
て有したセル構造をもつＧａＡｓ系太陽電池の製造方法
において、前記窓材となるＧａＡｌＡｓより成る薄膜エ
ピタキシャル層を形成して前記電極を取り付けた後、こ
のエピタキシャル層表面を硫化物を含む溶液で処理し、 さらに反射防止膜で被覆したことを特徴とするＧａＡｓ
系太陽電池の製造方法。 ３、上記硫化物を含む溶液が、（ＮＨ＿４）＿２Ｓ、Ｋ
＿２Ｓ、ＮＨ＿４ＨＳ、Ｃｓ＿２Ｓ・４Ｈ＿２Ｏ、Ｎａ
＿２Ｓ、ＮｉＳ、ＬｉＳの水溶液のいずれか１つまたは
２つ以上を選択的に混合した水溶液であることを特徴と
する請求項１または２に記載のＧａＡｓ系太陽電池の製
造方法。 ４、上記反射防止膜がＳｉＯ＿２、Ｓｉ＿３Ｎ＿４、Ｐ
ＳＧ、Ｔａ＿２Ｏ＿３のいずれかの材質から成っている
ことを特徴とする請求項１ないし３のいずれかに記載の
ＧａＡｓ系太陽電池の製造方法。[Claims] 1. A method for manufacturing a GaAs solar cell having a cell structure having a GaAs or GaAlAs epitaxial layer on the surface of the cell on which an electrode is attached on the side where sunlight enters, comprising: an epitaxial layer serving as the surface of the cell; After forming the epitaxial layer and attaching the electrode, the surface of the epitaxial layer is treated with a solution containing sulfide, and further coated with an antireflection film.
A method for manufacturing solar cells. 2. In a method for manufacturing a GaAs solar cell having a cell structure having a thin epitaxial layer made of GaAlAs as a window material on the cell surface on which an electrode is attached on the side where sunlight enters, a thin film made of GaAlAs serving as the window material. GaAs characterized in that after forming an epitaxial layer and attaching the electrode, the surface of this epitaxial layer is treated with a solution containing sulfide, and further coated with an antireflection film.
A method for manufacturing solar cells. 3. The solution containing the above sulfide contains (NH_4)_2S, K
_2S, NH_4HS, Cs_2S・4H_2O, Na
The method for manufacturing a GaAs-based solar cell according to claim 1 or 2, wherein the aqueous solution is a selective mixture of one or more of _2S, NiS, and LiS aqueous solutions. 4. The above anti-reflection film is SiO_2, Si_3N_4, P
4. The method for manufacturing a GaAs solar cell according to claim 1, wherein the GaAs solar cell is made of one of SG and Ta_2O_3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2113153A JPH0410577A (en) | 1990-04-27 | 1990-04-27 | Method for manufacturing GaAs solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2113153A JPH0410577A (en) | 1990-04-27 | 1990-04-27 | Method for manufacturing GaAs solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0410577A true JPH0410577A (en) | 1992-01-14 |
Family
ID=14604913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2113153A Pending JPH0410577A (en) | 1990-04-27 | 1990-04-27 | Method for manufacturing GaAs solar cells |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0410577A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60157269A (en) * | 1984-01-26 | 1985-08-17 | Natl Space Dev Agency Japan<Nasda> | Gaas solar cell and manufacture thereof |
| US4751201A (en) * | 1987-03-04 | 1988-06-14 | Bell Communications Research, Inc. | Passivation of gallium arsenide devices with sodium sulfide |
-
1990
- 1990-04-27 JP JP2113153A patent/JPH0410577A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60157269A (en) * | 1984-01-26 | 1985-08-17 | Natl Space Dev Agency Japan<Nasda> | Gaas solar cell and manufacture thereof |
| US4751201A (en) * | 1987-03-04 | 1988-06-14 | Bell Communications Research, Inc. | Passivation of gallium arsenide devices with sodium sulfide |
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