JPH04110761A - Gas sensor - Google Patents
Gas sensorInfo
- Publication number
- JPH04110761A JPH04110761A JP23193190A JP23193190A JPH04110761A JP H04110761 A JPH04110761 A JP H04110761A JP 23193190 A JP23193190 A JP 23193190A JP 23193190 A JP23193190 A JP 23193190A JP H04110761 A JPH04110761 A JP H04110761A
- Authority
- JP
- Japan
- Prior art keywords
- film
- heater
- sensitive film
- gas
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000009413 insulation Methods 0.000 abstract 2
- 230000002265 prevention Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ガスセンサに関する。更に詳しくは、消費電
力を低減させたガスセンサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a gas sensor. More specifically, the present invention relates to a gas sensor with reduced power consumption.
ガスセンサのガス感応膜としては、従来からＣＶＤ法な
どにより形成されたＳｎＯ□、ＺｎＯ，Ｆｅ２Ｏ３など
の金属酸化物半導体の薄膜が用いられている。これらの
ガス感応膜を有効に作用させるためには、ヒータを用い
てこれらを４００℃程度に加熱、保持する必要がある。As a gas sensitive film of a gas sensor, a thin film of a metal oxide semiconductor such as SnO□, ZnO, Fe2O3, etc. formed by CVD method or the like has conventionally been used. In order to make these gas-sensitive films work effectively, it is necessary to heat and maintain them at about 400° C. using a heater.
このため、これらのガス感応膜を保持する絶縁性基板の
下部（特開昭６３−２０５，５５４号公報、特開平１−
１３１，４４５号公報）あるいは内部（特開昭６３−２
９８，１４５号公報）に線状の金属ヒータを配置し、通
電加熱することが行われている。For this reason, the lower part of the insulating substrate holding these gas-sensitive films (JP-A No. 63-205,554, JP-A No. 1-1999)
131,445) or internally (JP-A No. 63-2
No. 98,145), a linear metal heater is disposed and heating is performed by energizing.
しかしながら、例えば絶縁性基板の下部にヒータを配置
した場合、余分な放熱が多く、消費電力が大きくなる欠
点がみられる。また、絶縁性基板の内部へヒータを埋め
込んだ場合にも、まず基板を加熱し、その後でガス感応
膜を加熱することになるため、やはり消費電力は大きく
なる。However, for example, when a heater is disposed below an insulating substrate, there is a drawback that a large amount of excess heat is dissipated and power consumption increases. Furthermore, even when a heater is embedded inside an insulating substrate, the substrate is heated first and then the gas-sensitive film is heated, which also increases power consumption.
本発明の目的は、絶縁性基板上にガス感応膜を設け、こ
のガス感応膜をヒータで加熱するガスセンサにおいて、
消費電力を低減せしめたものを提供することにある。An object of the present invention is to provide a gas sensor in which a gas sensitive film is provided on an insulating substrate and this gas sensitive film is heated with a heater.
The objective is to provide products with reduced power consumption.
かかる本発明の目的は、絶縁性基板とガス感応膜との間
に薄膜状のヒータを設置したガスセンサによって達成さ
れる。そして、好ましくは、ガス感応膜と薄膜状ヒータ
との間に、拡散障壁および絶縁用の薄膜を介在せしめる
。This object of the present invention is achieved by a gas sensor in which a thin film heater is installed between an insulating substrate and a gas sensitive film. Preferably, a diffusion barrier and an insulating thin film are interposed between the gas sensitive film and the thin film heater.
図面の第１図は、かかる好ましい態様の正面図であり、
第２図はその平面図である。FIG. 1 of the drawings is a front view of such a preferred embodiment;
FIG. 2 is a plan view thereof.
絶縁性基板１とガス感応膜２との間には、薄膜状のヒー
タ３が設置され、ガス感応膜２と薄膜状ヒータ３との間
には、拡散障壁・絶縁用の薄膜４を介在せしめている。A thin film heater 3 is installed between the insulating substrate 1 and the gas sensitive film 2, and a diffusion barrier/insulating thin film 4 is interposed between the gas sensitive film 2 and the thin film heater 3. ing.
薄膜状のヒータは、金、白金などからペースト印刷、焼
成法により、約１１００ｎ〜１μｍ程度の膜厚で形成さ
れる。また、拡散障壁・絶縁膜はＡ［２０，、ＳｉＯ□
、Ａ Ｑ Ｎ、 Ｓｉ３Ｎ４などから同様の方法により
、約２００ｎｍ〜１μｍ程度の膜厚で形成させる。この
膜の介在は、ガス感応膜形成物質とヒータ形成物質との
間の、相互拡散の防止および絶縁に有効である。The thin film heater is formed from gold, platinum, or the like by paste printing and baking to have a film thickness of approximately 1100 nm to 1 μm. In addition, the diffusion barrier/insulating film is A[20,, SiO□
, AQN, Si3N4, etc., to a thickness of approximately 200 nm to 1 μm using a similar method. The presence of this film is effective in preventing mutual diffusion and insulating the gas-sensitive film-forming material and the heater-forming material.
以上の各要素を有するガスセンサを使用する場合には、
薄膜状のヒータ３に、ステム５に設けられた端子６．６
’、６”、６”’に接続されたボンディングワイヤ７．
７’、７”、７”’の内７ ’、 ７ ”’より電力が
供給され、ガス感応膜２を４００℃程度に加熱し、その
温度を保持する。この際、拡散障壁・絶縁用薄膜４は、
一般に数１１００ｎと薄いので、それを介在させても熱
損失は最小限に抑制される。When using a gas sensor that has each of the above elements,
A terminal 6.6 provided on the stem 5 of the thin film heater 3
Bonding wires connected to ', 6'', 6'''7.
Electric power is supplied from 7', 7'' of 7', 7'', 7''' to heat the gas sensitive film 2 to about 400°C and maintain that temperature.At this time, the diffusion barrier/insulating thin film 4 is
Since it is generally as thin as several 1100 nanometers, heat loss can be suppressed to a minimum even if it is present.
なお、Ａｕ電極８，８′は、そこへの通電によりガス感
応膜２での抵抗変化が測定される。Note that the change in resistance of the gas-sensitive film 2 is measured by applying current to the Au electrodes 8, 8'.
〔作用〕および〔発明の効果〕
本発明に係るガスセンサは、絶縁性基板とガス感応膜と
の間に、薄膜状のヒータを設置しているので、ヒータか
らガス感応膜への伝熱が迅速かつ無駄なく行われる。こ
のため、消費電力を大幅に低減することが可能である。[Function] and [Effects of the Invention] Since the gas sensor according to the present invention has a thin film heater installed between the insulating substrate and the gas sensitive film, heat transfer from the heater to the gas sensitive film is rapid. And it is done without waste. Therefore, it is possible to significantly reduce power consumption.
また、ヒータが薄膜状に形成されているため、ガス感応
膜全面にわたっての温度制御が容易である。Furthermore, since the heater is formed in the form of a thin film, it is easy to control the temperature over the entire surface of the gas-sensitive film.
第１図は２本発明に係るガスセンサの一態様の正面図で
あり、第２図はその平面図である。
（符号の説明）
１・・・・・絶縁性基板
２・・・・・ガス感応膜
３・・・・・薄膜状ヒータ
４・・・・・拡散障壁・絶縁用薄膜
第１図FIG. 1 is a front view of one embodiment of a gas sensor according to the present invention, and FIG. 2 is a plan view thereof. (Explanation of symbols) 1... Insulating substrate 2... Gas sensitive film 3... Thin film heater 4... Diffusion barrier/insulating thin film Fig. 1
Claims (1)
設置してなるガスセンサ。 ２、ガス感応膜と薄膜状ヒータとの間に、拡散障壁およ
び絶縁用の薄膜を介在せしめた請求項１記載のガスセン
サ。[Claims] 1. A gas sensor comprising a thin film heater installed between an insulating substrate and a gas sensitive film. 2. The gas sensor according to claim 1, further comprising a diffusion barrier and an insulating thin film interposed between the gas sensitive film and the thin film heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23193190A JPH04110761A (en) | 1990-08-31 | 1990-08-31 | Gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23193190A JPH04110761A (en) | 1990-08-31 | 1990-08-31 | Gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04110761A true JPH04110761A (en) | 1992-04-13 |
Family
ID=16931309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23193190A Pending JPH04110761A (en) | 1990-08-31 | 1990-08-31 | Gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04110761A (en) |
-
1990
- 1990-08-31 JP JP23193190A patent/JPH04110761A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6066145A (en) | External atmosphere detecting device | |
| JPH08219900A (en) | Platinum-based temperature sensor | |
| JP3452409B2 (en) | Micro bridge heater | |
| GB1532908A (en) | Resistance thermometers | |
| JPS62263417A (en) | Thermal flow rate sensor | |
| EP0334614A3 (en) | Catalytic gas detector | |
| JP3201881B2 (en) | Gas sensor | |
| JPS61245502A (en) | thin film thermistor | |
| JPH0196548A (en) | Sensor element | |
| JPH01313751A (en) | Gas sensor | |
| JP3003943B2 (en) | Gas sensor | |
| JPH01131445A (en) | gas sensor | |
| JPH0318935Y2 (en) | ||
| JPS622122Y2 (en) | ||
| JPH02216043A (en) | Driving of gas sensor | |
| JPS61184859A (en) | Silicon heat sink chip | |
| JPS63213284A (en) | Thin film heater and its temperature control | |
| JPS6116930B2 (en) | ||
| JPH05322821A (en) | Gas sensor | |
| JPS62231148A (en) | Thermal analysis instrument | |
| JPH04343059A (en) | Gas sensor | |
| JP3265326B2 (en) | Gas sensor | |
| JPH0545322A (en) | Gas detector | |
| JP2000111379A (en) | Flow rate detecting device and manufacturing method thereof | |
| JP3348255B2 (en) | Heat removal atmosphere detector |