JPH04113613A - X-ray mask and its manufacture - Google Patents
X-ray mask and its manufactureInfo
- Publication number
- JPH04113613A JPH04113613A JP2232787A JP23278790A JPH04113613A JP H04113613 A JPH04113613 A JP H04113613A JP 2232787 A JP2232787 A JP 2232787A JP 23278790 A JP23278790 A JP 23278790A JP H04113613 A JPH04113613 A JP H04113613A
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- Prior art keywords
- ray
- pattern
- base
- metal
- transparent material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の属する産業上の利用分野）
本発明はＸ線を利用して、半導体集積回路パタン等の微
細パタンを転写するのに用いるＸ線マスクとその製造方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application to which the Invention Pertains) The present invention relates to an X-ray mask used to transfer fine patterns such as semiconductor integrated circuit patterns using X-rays, and a method for manufacturing the same. It is.
（従来の技術）
Ｘ線マスクはＸ線透過率の高い部分と低い部分とか存在
し、透過率の異なるそれぞれの部分が所定のパタン形状
をなしている。Ｘ線露光法は、このＸ線マスクを原版と
して用い、前記Ｘ線マスクと近接または密着させて、Ｘ
線感光性樹脂を塗布した被露光基板を配置し、該Ｘ線マ
スクを通してＸ線を照射する露光方法である。前記Ｘ線
感光性樹脂を前記Ｘ線透過率の高い部分の形状に相当す
る所定のパタン形状に部分的に感光させ、現像処理を通
して感光性樹脂の一部分を該パタン形状に除去または残
すことにより、原版であるＸ線マスクのパタンを前記被
露光基板上に転写する。(Prior Art) An X-ray mask has a portion with high X-ray transmittance and a portion with low X-ray transmittance, and each portion with a different transmittance forms a predetermined pattern shape. In the X-ray exposure method, this X-ray mask is used as an original, and the X-ray mask is placed close to or in close contact with the X-ray mask.
This is an exposure method in which a substrate to be exposed coated with a radiation-sensitive resin is placed and X-rays are irradiated through the X-ray mask. By partially exposing the X-ray photosensitive resin to a predetermined pattern shape corresponding to the shape of the high X-ray transmittance portion, and removing or leaving a portion of the photosensitive resin in the pattern shape through a development process, The pattern of the original X-ray mask is transferred onto the substrate to be exposed.
Ｘ線マスクにおいては、Ｘ線透過率が高い部分すなわち
Ｘ線透過部分と、Ｘ線透過率が低い部分すなわち遮光部
分とのＸ線透過率の比をなるべく太き（することか重要
である。従来の代表的なＸ線マスクは、例えば森末道忠
監修ｒＬｓＩ設計製作技術Ｊ （１９８７年電気書院
発行’） Ｐ２７４〜Ｐ２７６に開示されているように
、シリコン（珪素）、窒化珪素、窒化はう素、炭化珪素
等、Ｘ線透過性の薄膜上に、金、タングステン、タンタ
ル等のＸ線吸収体金属で遮光部分のパタンを形成してい
た。Ｘ線吸収体金属パタンの形成にはドライエツチング
や電気めっき等の方法かとられる。In an X-ray mask, it is important to make the ratio of the X-ray transmittance between a portion with high X-ray transmittance, that is, an X-ray transmitting portion, and a portion with low X-ray transmittance, that is, a light-shielding portion, as thick as possible. Typical conventional X-ray masks are made of silicon, silicon nitride, or nitride film, as disclosed in, for example, rLsI Design and Manufacturing Techniques J supervised by Michitada Morisue (Published by Denkishoin, 1987), pages 274 to 276. A pattern of a light-shielding part is formed using an X-ray absorbing metal such as gold, tungsten, or tantalum on an X-ray transparent thin film such as silicon carbide or silicon carbide.Dry etching is used to form the X-ray absorbing metal pattern. Methods such as electroplating and electroplating are used.
この場合、Ｘ線の遮光能力は前記Ｘ線吸収体金属パタン
の厚さて決まるため、パタンの微細度に関係なくＸ線吸
収体金属パタンは所定の厚さを有していなければならな
い。このため、パタン形状か微細になるほど、Ｘ線マス
ク上のＸ線吸収体金属パタンの形成は困難となる。In this case, since the X-ray blocking ability is determined by the thickness of the X-ray absorber metal pattern, the X-ray absorber metal pattern must have a predetermined thickness regardless of the fineness of the pattern. Therefore, the finer the pattern shape, the more difficult it becomes to form an X-ray absorber metal pattern on an X-ray mask.
第６図（ａ）〜（ｄ）、第７図、第８図はＸ線透過性薄
膜上にＸ線吸収体金属パタンを配した前記のＸ線マスク
の欠点を解決するため提案された特願平１−４３２４０
号に示される別のＸ線マスクである。Ｘ線透過物質２６
またはＸ線吸収体金属２７あるいはその両方を適宜基板
２８上に堆積してその断面が微細線となるようにせしめ
、該断面が現れるように前記の基板をスライスし、該断
面を研磨してＸ線マスクを作っている。２９は接着剤で
ある。前記の断面上の微細線形状をパタンとしてＸ線露
光に用いるものである。このＸ線マスクではＸ線吸収体
金属パタンの厚さはスライス研磨したＸ線マスクの厚さ
となる。スライス研磨する該Ｘ線マスクの厚さは断面に
現れる微細線の細さに関係なく大きくすることができる
ため、Ｘ線吸収体金属パタンの厚さを大きくしてＸ線遮
光部の遮光能力を著しく向上させ、Ｘ線透過部分とＸ線
遮光部分とのＸ線透過率の比を極めて大きくとれるとい
う特徴かある。6(a)-(d), FIG. 7, and FIG. 8 show features proposed to solve the drawbacks of the above-mentioned X-ray mask in which an X-ray absorbing metal pattern is arranged on an X-ray transparent thin film. Ganpei 1-43240
This is another X-ray mask shown in the issue. X-ray transparent substance 26
Alternatively, the X-ray absorber metal 27 or both may be appropriately deposited on the substrate 28 so that its cross section becomes a fine line, the substrate is sliced so that the cross section is exposed, and the cross section is polished. Making a line mask. 29 is an adhesive. The fine line shape on the cross section is used as a pattern for X-ray exposure. In this X-ray mask, the thickness of the X-ray absorber metal pattern is the same as the thickness of the slice-polished X-ray mask. Since the thickness of the X-ray mask to be sliced and polished can be increased regardless of the thinness of the fine lines appearing in the cross section, the thickness of the X-ray absorber metal pattern is increased to increase the light shielding ability of the X-ray shielding part. The X-ray transmittance ratio between the X-ray transmitting portion and the X-ray blocking portion can be significantly increased.
（発明か解決しようとする問題点）
しかなから、これら第６図（ａ）〜（ｄｌの各Ｘ線マス
クでは、微細線形状の幅は正確に規定できるか、長さを
正確に規定することかできない。また、第７図及び第８
図のＸ線マスクでは、形状の縦横を正確に規定できるも
のの、貼り合わせて作る積み重ね構造のため、被露光基
板とＸ線吸収体パタンとの露光時の近接間隙か縦線と横
線で該Ｘ線マスクの片方のマスク素片の厚さの分だけ異
なってしまう。このため、特に、密着に近い間隙にＸ線
マスクと被露光基板を設定してパタン転写を行う場合、
縦線と横線とて転写されるパタンの線幅や解像性等か異
なってしまう。また、マスクの厚さが２枚分となるので
Ｘ線透過部分のＸ線透過率か、貼り合わせない構造の場
合より小さくなる欠点も生じてしまう。(Problem to be solved by the invention) However, in each of the X-ray masks shown in FIGS. In addition, Figures 7 and 8
Although the X-ray mask shown in the figure can accurately define the length and width of the shape, it has a stacked structure that is made by pasting them together, so the X-ray mask can be The line mask differs by the thickness of one mask element. For this reason, especially when performing pattern transfer with the X-ray mask and exposed substrate set close to each other,
The line width, resolution, etc. of the pattern to be transferred differs between vertical lines and horizontal lines. Furthermore, since the thickness of the mask is equal to that of two masks, there is a drawback that the X-ray transmittance of the X-ray transmitting portion is lower than that of a structure that is not bonded together.
本発明の目的は、微細線パタンの線幅方向の寸法及び長
さ方向の寸法を正確に制膨し決定することのできるＸ線
マスクとその製造方法を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an X-ray mask that can accurately control and determine the widthwise dimension and lengthwise dimension of a fine line pattern, and a method for manufacturing the same.
（問題点を解決するための構成）
本発明は、基体上に単にＸ線透過性物質やＸ線吸収体金
属を堆積して断面か出るようにスライスしてＸ線マスク
とするのではなく、Ｘ線透過性物質やＸ線吸収体重金属
の一方でパタンを形成し他方は第一の領域と第二の領域
の二つの領域よりなりそのパタンを取囲むように配置さ
れた後に、その断面か出るようにスライスし、Ｘ線マス
クの微細パタンか形成されていることを特徴とする。(Configuration for Solving Problems) The present invention does not simply deposit an X-ray transparent substance or an X-ray absorbing metal on a substrate and slice it so that the cross section is exposed to make an X-ray mask. A pattern is formed on one side of an X-ray transparent substance or an X-ray absorbing heavy metal, and the other side is made up of two regions, a first region and a second region, and is arranged so as to surround the pattern. It is characterized by being sliced so that it comes out, and a fine pattern of an X-ray mask is formed.
（作 用）
長さを規定した線パタンすなわち線分パタンや穴パタン
、点パタン、Ｔ字パタン、Ｌ字パタン。(Function) Line patterns with defined lengths, that is, line segment patterns, hole patterns, dot patterns, T-shaped patterns, and L-shaped patterns.
コの字パタン、ループパタン等、従来の特願平１−４３
２４０号に示されたＸ線マスクでは得にくい各種形状の
微細パタンを有し、Ｘ線透過部分とＸ線遮光部分のＸ線
透過率の比か極めて大きいＸ線マスクか容易に得られる
。Conventional patent application Hei 1-43 such as U-shaped pattern, loop pattern, etc.
The X-ray mask shown in No. 240 has fine patterns of various shapes that are difficult to obtain, and the X-ray mask has an extremely large ratio of X-ray transmittance between the X-ray transmitting part and the X-ray blocking part.
（実施例１）
第１図は本発明のＸ線マスクの製作方法を示す図である
。シリコン（Ｓｉ）基板ｌ上にＸ線吸収体重金属として
タンタル（Ｔａ）層２を堆積し、その上に二酸化珪素（
Ｓ１０２）層３て第１図（ａ）に示すようなラインアン
ドスペースパタンを形成する。次に第１図（ｂ）に示す
ようにＳｉＯ□層３のパタン３を覆って更にＴａ層４を
再び堆積する。Ｘ線マスクの大きさを確保し、かつ、Ｘ
線マスクのほぼ中央に前記５ｉ０２層３のパタンか来る
ように、第１図（Ｃ１に示すように別のＳｉ基板５を貼
りつける。６は接着剤である。(Example 1) FIG. 1 is a diagram showing a method for manufacturing an X-ray mask of the present invention. A tantalum (Ta) layer 2 is deposited as an X-ray absorbing heavy metal on a silicon (Si) substrate l, and silicon dioxide (
S102) A line and space pattern as shown in FIG. 1(a) is formed on the layer 3. Next, as shown in FIG. 1(b), a Ta layer 4 is again deposited covering the pattern 3 of the SiO□ layer 3. Ensure the size of the X-ray mask and
Another Si substrate 5 is pasted as shown in FIG. 1 (C1) so that the pattern of the 5i02 layer 3 is placed approximately in the center of the line mask. 6 is an adhesive.
この後、第１図（Ｃ）において点線で示すように、全体
を前記５ｉｎ２層３パタンに垂直にスライスする。Thereafter, as shown by dotted lines in FIG. 1(C), the whole is vertically sliced into the 5-inch, 2-layer, 3-layer pattern.
両面を研磨し、８１０２層３のパタン付近をＸ線透過率
か十分とれる厚さにすれば、第１図（ｄ）に示すＸ線マ
スクか出来上がる。各面の研磨は図では平行平坦とした
か、片面平坦・片面凹等、凹状、凸状を適当に組み合わ
せて行っても良い。By polishing both sides and making the area near the pattern of the 8102 layer 3 thick enough to provide sufficient X-ray transmittance, the X-ray mask shown in FIG. 1(d) is completed. The polishing of each surface may be made parallel and flat in the figure, or may be performed in an appropriate combination of concave and convex surfaces, such as one side flat and one side concave.
スライス後、研磨前または研磨後にＸ線マスクの強度を
確保するためにリング状等の金属、ガラス等の補強枠を
取り付けても良いことは言うまでもない。It goes without saying that a ring-shaped reinforcing frame made of metal, glass, etc. may be attached to ensure the strength of the X-ray mask after slicing, before or after polishing.
第１図（ｄｌに示したＸ線マスクに、円形のリング状の
補強枠７を取り付けた例を第２図に示す。Ｔａ層２及び
４の中に埋め込まれたＳｉＯ□層３のパタンの断面形状
は、３１０２層３の厚さを線幅とし、ＳｉＬ層３のパタ
ンの線幅を長さとする矩形となる。従って、第１図（ａ
）で形成するＳｉＯ□層３のパタンの線幅と５１０２層
３の厚さを適当に選べば、線分状２点状、矩形状、正方
形状等の各パタンを形成することができる。従来の特願
平１−４３２４０号に開示された発明と同様に、ＳｉＯ
□層３の厚さの制御により線幅方向の寸法が正確に決定
できるのに加え、５ｉ０２層３パタンの幅の制御により
長さ方向の寸法も正確に決定することができる。第１図
ては、５ｉｏ２層３のパタンをラインアンドスペースパ
タンて説明を行ったか、ラインパタン１本であっても良
く、他の任意のパタンでも良いことは説明するまでもな
い。また、Ｘ線吸収体金属としてはＴａ、 Ｘ線透過性
物質としてＳｉＯ□を用いたか、それぞれほかの任意の
材料であっても良いことは明白である。Figure 2 shows an example in which a circular ring-shaped reinforcing frame 7 is attached to the X-ray mask shown in Figure 1 (dl). The cross-sectional shape is a rectangle whose line width is the thickness of the 3102 layer 3 and whose length is the line width of the pattern of the SiL layer 3. Therefore, as shown in FIG.
) By appropriately selecting the line width of the pattern of the SiO□ layer 3 and the thickness of the 5102 layer 3, it is possible to form various patterns such as a linear two-point shape, a rectangular shape, and a square shape. Similar to the invention disclosed in the conventional patent application No. 1-43240, SiO
□ Not only can the dimension in the line width direction be determined accurately by controlling the thickness of the layer 3, but also the dimension in the length direction can be determined accurately by controlling the width of the 5i02 layer 3 pattern. In FIG. 1, the pattern of the 5io2 layer 3 has been described as a line and space pattern, but it goes without saying that it may be a single line pattern or any other arbitrary pattern. Further, it is obvious that Ta may be used as the X-ray absorbing metal and SiO□ may be used as the X-ray transparent substance, or any other arbitrary material may be used.
Ｘ線吸収体金属として金、タングステン、モリブデン等
、Ｘ線透過性物質としては、珪素、窒化はう素、炭化珪
素、珪素、ベリリウム等を用いることができる。基板も
任意の材料で良く、当然のことなから、Ｘ線吸収体金属
の基板を用いてもよい。As the X-ray absorber metal, gold, tungsten, molybdenum, etc. can be used, and as the X-ray transparent substance, silicon, boron nitride, silicon carbide, silicon, beryllium, etc. can be used. The substrate may be made of any material, and of course, an X-ray absorbing metal substrate may be used.
（実施例２）
第３図は本発明の別の実施例である。８１基板８上に形
成した段差を有するＸ線吸収体金属Ｔａ層９の上にＸ線
透過性物質ＳｉＯ□によりパタン１０を形成する。(Example 2) FIG. 3 shows another example of the present invention. 81 A pattern 10 is formed using an X-ray transparent material SiO□ on the X-ray absorber metal Ta layer 9 having a step formed on the substrate 8.
その後再びＸ線吸収体金属としてＴａ層１１を堆積し、
前記のＸ線透過性物質ＳｉＯ□のパタンｌＯを覆う。After that, a Ta layer 11 is deposited again as an X-ray absorber metal,
The pattern lO of the X-ray transparent material SiO□ is covered.
第１図の場合と同様に別のＳｉ基板１２と貼り付け、段
差の断面が現れるようにスライスした後研磨する。１３
は接着剤である。この場合も研磨面を両面平坦、−面平
坦・他面口、−面凸・他面凹１両面凹等いずれでも良い
。段差形状及び段差上に形成するＸ線透過物質のパタン
形状に応して第３図（ａ〜（ｃ）に例を示すような各種
パタンか得られる。段差の形状及びＸ線透過性物質で形
成するパタンの形状は任意で良く、第３図に図示した以
外に各種の形状か得られることは明らかである。Ｘ線透
過性物質のパタンを形成するには、エツチング、リフト
オフ、斜め蒸着等、各種の方法を使用することかできる
。また、この場合も基板、Ｘ線吸収体、Ｘ線透過性物質
の材料は、実施例１の場合と同様、それぞれ任意に選ん
でも良い。更に第２図に例を示したように補強枠を取り
付けることも可能である。As in the case of FIG. 1, it is attached to another Si substrate 12, sliced so that the cross section of the step is exposed, and then polished. 13
is an adhesive. In this case as well, the polished surfaces may be flat on both sides, flat on the negative side and open on the other side, convex on the negative side and concave on the other side, and concave on both sides. Depending on the shape of the step and the pattern shape of the X-ray transparent material formed on the step, various patterns such as those shown in Fig. 3 (a to (c)) can be obtained. The shape of the pattern to be formed may be arbitrary, and it is clear that various shapes other than those shown in Fig. 3 can be obtained.For forming the pattern of the X-ray transparent material, etching, lift-off, oblique vapor deposition, etc. , various methods can be used.Also, in this case as well, the materials for the substrate, the X-ray absorber, and the X-ray transparent substance may be selected arbitrarily, respectively, as in the case of Example 1. It is also possible to attach a reinforcing frame as shown in the example shown in the figure.
（実施例３）
第４図は本発明の更に別の実施例である。Ｘ線吸収体金
属の堆積と、Ｘ線透過性物質の堆積とそれぞれ２回以上
繰り返し、より複雑なパタン形状（（ａ）はループ状、
（ｂ）はラインアンドスペース）を得た例である。基板
、Ｘ線吸収体金属、Ｘ線透過物質の材料として、第１図
、第３図と同様にそれぞれＳｌ、 Ｔａ、 ５１０２を
用いたか、他の材料であっても良いことは明確である。(Embodiment 3) FIG. 4 shows yet another embodiment of the present invention. The deposition of the X-ray absorbing metal and the deposition of the X-ray transparent material are repeated two or more times each to create more complex pattern shapes ((a) is loop-shaped,
(b) is an example of obtaining line and space). It is clear that the substrate, the X-ray absorbing metal, and the X-ray transmitting substance may be made of Sl, Ta, or 5102, respectively, as in FIGS. 1 and 3, or other materials may be used.
また、補強枠を取り付けても良いことも同様である。１
４は基板、１５はＸ線吸収体金属、１６はＸ線透過性物
質のパタン、１７はＸ線吸収体金属、１８は接着剤、１
９は基板である。Similarly, a reinforcing frame may be attached. 1
4 is a substrate, 15 is an X-ray absorber metal, 16 is a pattern of an X-ray transparent material, 17 is an X-ray absorber metal, 18 is an adhesive, 1
9 is a substrate.
第１図、第３図、第４図に示した各種パタンを組み合わ
せて一つのＸ線マスク上に配置することも可能であり、
Ｘ線吸収体金属及びＸ線透過性物質の堆積と加工か可能
ならば、パタンの形状は如何なる形態であっても良い。It is also possible to combine the various patterns shown in FIGS. 1, 3, and 4 and arrange them on one X-ray mask.
The pattern may have any shape as long as it is possible to deposit and process the X-ray absorbing metal and the X-ray transparent material.
（実施例４）
実施例１〜実施例３に示した本発明のＸ線マスクにおい
て、Ｘ線吸収体金属の部分とＸ線透過性物質の部分を入
れ替えれば、遮光部と透過部を逆にしたＸ線マスクが得
られ、同様の機能、効果が得られることは明らかである
。(Example 4) In the X-ray masks of the present invention shown in Examples 1 to 3, if the X-ray absorber metal part and the X-ray transparent material part are replaced, the light shielding part and the transmitting part can be reversed. It is clear that an X-ray mask with similar functions and effects can be obtained.
第５図にその実施例を示す。第５図において、２０は基
板、２１はＸ線透過性物質、２２はＸ線吸収体金属のパ
タン、２３はＸ線透過性物質、２４は接着剤、２５は基
板である。接着剤としてＸ線透過性のものを用いれば、
最後にＸ線吸収体金属上に設けるＸ線透過性物質２３の
層の形成を省略することも可能である。また、基板２０
自体としてＸ線透過性物質を用いれば、Ｘ線透過性物質
２１の層の形成を省略することも可能である。FIG. 5 shows an example thereof. In FIG. 5, 20 is a substrate, 21 is an X-ray transparent material, 22 is an X-ray absorbing metal pattern, 23 is an X-ray transparent material, 24 is an adhesive, and 25 is a substrate. If you use an X-ray transparent adhesive,
Finally, it is also possible to omit the formation of the layer of X-ray transparent material 23 provided on the X-ray absorber metal. In addition, the substrate 20
If an X-ray transparent material is used as the material itself, it is also possible to omit the formation of the layer of the X-ray transparent material 21.
（発明の効果）
以上説明したように、本発明によれば、Ｘ線マスク微細
線パタンの線幅方向の寸法を膜の堆積厚さの制御によっ
て正確に制御、決定できる上、微細線パタンの長さ方向
の寸法をＸ線透過性物質やＸ線吸収体金属パタンの線幅
の制御によって正確に制御、決定することかできる。微
細線パタンの線幅や長さに関係なくＸ線吸収体金属の厚
さを大きくすることができるので、Ｘ線透過部とＸ線遮
光部とのＸ線透過率の比を非常に大きくとれるという利
点があり、従来のＸ線マスクでは得られなかった矩形、
Ｌ字、コの字、Ｔ字、ループ等各種形状のパタンを容易
に得ることかできる。(Effects of the Invention) As described above, according to the present invention, the dimension in the line width direction of the X-ray mask fine line pattern can be accurately controlled and determined by controlling the film deposition thickness, and the fine line pattern can be accurately controlled and determined. The lengthwise dimension can be accurately controlled and determined by controlling the line width of the X-ray transparent material or X-ray absorber metal pattern. Since the thickness of the X-ray absorber metal can be increased regardless of the line width and length of the fine line pattern, the ratio of X-ray transmittance between the X-ray transmitting part and the X-ray blocking part can be made very large. This has the advantage of rectangular shapes that cannot be obtained with conventional X-ray masks.
Patterns of various shapes such as L-shape, U-shape, T-shape, loop, etc. can be easily obtained.
第１図、第２図、第３図、第４図及び第５図は本発明の
実施例を示す斜視図、第６図、第７図及び第８図は先願
に係わる従来のＸ線マスクを示す図である。
１−＝Ｓｉ基板、２＝４ａ層、３−３ｉＬ層、４−Ｔａ
層、５・・・Ｓｉ基板、６・・・接着剤、７・・・リン
グ状の補強枠、８・・・８１基板、９・・・Ｔａ層、１
０・・・５１０２のパタン、１１・・Ｔａ層、１２・・
・８１基板、１３・・・接着剤、１４・・・基板、１５
・・・Ｘ線吸収体金属、１６・・・Ｘ線透過性物質のパ
タン、１７・・・Ｘ線吸収体金属、１８・・・接着剤、
１９゜２０・・・基板、２１・・・Ｘ線透過性物質、２
２・・・Ｘ線吸収体金属のパタン、２３・・・Ｘ線透過
性物質、２４・・・接着剤、２５・・・基板、２６・・
・Ｘ線透過性物質、２７・・・Ｘ線吸収体金属、２８・
・・基板、２９・・・接着剤。
特許出願人 日本電信電話株式会社1, 2, 3, 4, and 5 are perspective views showing embodiments of the present invention, and FIGS. 6, 7, and 8 are conventional X-rays according to the prior application. It is a figure showing a mask. 1-=Si substrate, 2=4a layer, 3-3iL layer, 4-Ta
layer, 5...Si substrate, 6...adhesive, 7...ring-shaped reinforcing frame, 8...81 substrate, 9...Ta layer, 1
0...5102 patterns, 11...Ta layer, 12...
・81 substrate, 13...adhesive, 14...substrate, 15
... X-ray absorber metal, 16... Pattern of X-ray transparent material, 17... X-ray absorber metal, 18... Adhesive,
19°20...Substrate, 21...X-ray transparent material, 2
2... Pattern of X-ray absorber metal, 23... X-ray transparent material, 24... Adhesive, 25... Substrate, 26...
・X-ray transparent substance, 27...X-ray absorber metal, 28・
...Substrate, 29...adhesive. Patent applicant Nippon Telegraph and Telephone Corporation
Claims (4)
分に接して配置されたＸ線吸収体金属よりなる第一の基
体領域と、 Ｘ線透過性物質によって前記第一の基体領域に接して形
成された所望の形状のパタン領域と、該Ｘ線透過性物質
のパタン領域を前記第一の基体領域のＸ線吸収体金属と
ともに取り囲むように配置されたＸ線吸収体金属よりな
る第二の基体領域とを備え、 該Ｘ線透過性物質のパタン領域をＸ線透過部とし、前記
第一と第二の基体領域のＸ線吸収体金属をＸ線遮光部と
したことを特徴とするＸ線マスク。(1) A first base region made of an X-ray absorber metal or made of an X-ray absorber metal disposed in contact with any part of the base material, and an X-ray transparent substance attached to the first base region; A pattern region having a desired shape formed in contact with the pattern region, and a second region made of an X-ray absorbing metal arranged so as to surround the pattern region of the X-ray transparent material together with the X-ray absorbing metal of the first base region. a second base region, the patterned region of the X-ray transparent material serves as an X-ray transmitting portion, and the X-ray absorbing metal of the first and second base regions serves as an X-ray shielding portion. X-ray mask.
分に接して配置されたＸ線透過物質よりなる第一の基体
領域と、 Ｘ線吸収体金属によって前記第一の基体領域に接して形
成された所望の形状のパタン領域と、該Ｘ線吸収体金属
のパタン領域を前記第一の基体領域のＸ線透過性物質と
ともに取り囲むように配置されたＸ線透過性物質よりな
る第二の基体領域とを備え、 該Ｘ線吸収体金属のパタンの領域をＸ線遮光部とし、前
記第一と第二の基体領域のＸ線透過性物質をＸ線透過部
としたことを特徴とするＸ線マスク。(2) a first base region made of an X-ray transparent substance or made of an X-ray transparent substance disposed in contact with an arbitrary part of the base material, and in contact with the first base region by an X-ray absorbing metal; A second substrate made of an X-ray transparent material arranged to surround the formed pattern region of the desired shape and the pattern region of the X-ray absorber metal together with the X-ray transparent material of the first base region. a base region, the region of the pattern of the X-ray absorber metal serves as an X-ray shielding portion, and the X-ray transparent material of the first and second base regions serves as an X-ray transmitting portion. X-ray mask.
置されたＸ線吸収体金属の表面上に、Ｘ線透過性物質に
よって所望のパタンを形成し、その形成した前記Ｘ線透
過性物質のパタンをＸ線吸収体金属で覆い、前記下地の
Ｘ線吸収体金属の基体または任意の基体上に載置せられ
たＸ線吸収体金属と合わせて、前記Ｘ線透過性物質のパ
タンを囲んでＸ線吸収体金属が存在するようになし、該
Ｘ線吸収体金属で囲まれたＸ線透過性物質のパタン断面
が現れるように、前記基体ごと、前記Ｘ線吸収体金属で
囲まれた前記Ｘ線透過性物質のパタンをスライスし、該
Ｘ線透過性物質のパタンの断面部分をＸ線透過部とし、
前記基体自体のまたは基体上に載置したＸ線吸収体金属
の断面部分及び前記Ｘ線透過性物質のパタンを覆うため
配したＸ線吸収体金属の断面部分をＸ線遮光部としたこ
とを特徴とするＸ線マスクの製造方法。(3) A desired pattern is formed using an X-ray transparent substance on the base of the X-ray absorber metal or on the surface of the X-ray absorber metal placed on an arbitrary base, and the formed X A pattern of a radiolucent substance is covered with an X-ray absorber metal, and in combination with the X-ray absorber metal base or the X-ray absorber metal placed on an arbitrary base, the X-ray transmitter The X-ray absorber metal is arranged to surround the pattern of the substance, and the X-ray absorber metal is arranged so that the cross section of the pattern of the X-ray transparent substance surrounded by the X-ray absorber metal appears. slicing the pattern of the X-ray transparent material surrounded by metal, and making the cross-sectional part of the pattern of the X-ray transparent material an X-ray transparent part;
A cross-sectional portion of the base itself or an X-ray absorber metal placed on the base and a cross-sectional portion of the X-ray absorber metal arranged to cover the pattern of the X-ray transparent material are used as an X-ray shielding portion. Characteristic method for manufacturing an X-ray mask.
置されたＸ線透過性物質の表面上に、Ｘ線吸収体金属に
よって所望のパタンを形成し、その形成した前記Ｘ線吸
収体金属のパタンをＸ線透過性物質で覆い、前記下地の
Ｘ線透過性物質の基体または任意の基体上に載置せられ
たＸ線透過性物質と合わせて、前記Ｘ線吸収体金属パタ
ンを囲んでＸ線透過性物質が存在するようになし、該Ｘ
線透過性物質で囲まれたＸ線吸収体金属のパタン断面が
現れるように、前記基体ごと、前記Ｘ線透過性物質で囲
まれた前記Ｘ線吸収体金属のパタンをスライスし、該Ｘ
線吸収体金属のパタンの断面部分をＸ線遮光部とし、前
記基体自体のまたは基体上に載置したＸ線透過性物質の
断面部分及び前記Ｘ線吸収体金属のパタンを覆うため配
したＸ線透過性物質の断面部分をＸ線透過部としたこと
を特徴とするＸ線マスクの製造方法。(4) A desired pattern is formed using an X-ray absorbing metal on the base of the X-ray transparent material or on the surface of the X-ray transparent material placed on any base, and the X-rays formed by the desired pattern are formed using an X-ray absorbing metal. The pattern of the absorber metal is covered with an X-ray transparent material, and together with the X-ray transparent material placed on the underlying X-ray transparent material base or any base, the X-ray absorber metal is An X-ray transparent substance is present surrounding the pattern, and the
The pattern of the X-ray absorber metal surrounded by the X-ray transparent material is sliced together with the base so that the cross section of the pattern of the X-ray absorber metal surrounded by the X-ray transparent material is exposed.
The cross section of the pattern of the ray absorber metal is used as an X-ray shielding part, and the X-ray disposed to cover the cross section of the X-ray transparent material of the base itself or placed on the base and the pattern of the X-ray absorber metal. A method for manufacturing an X-ray mask, characterized in that a cross-sectional portion of a radiation-transparent substance is an X-ray transparent portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23278790A JP2912692B2 (en) | 1990-09-03 | 1990-09-03 | X-ray mask manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23278790A JP2912692B2 (en) | 1990-09-03 | 1990-09-03 | X-ray mask manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04113613A true JPH04113613A (en) | 1992-04-15 |
| JP2912692B2 JP2912692B2 (en) | 1999-06-28 |
Family
ID=16944741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23278790A Expired - Fee Related JP2912692B2 (en) | 1990-09-03 | 1990-09-03 | X-ray mask manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2912692B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0827919A (en) * | 1994-07-19 | 1996-01-30 | Asahi Fiber Glass Co Ltd | Insulation material for roof and insulation structure of roof |
-
1990
- 1990-09-03 JP JP23278790A patent/JP2912692B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0827919A (en) * | 1994-07-19 | 1996-01-30 | Asahi Fiber Glass Co Ltd | Insulation material for roof and insulation structure of roof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2912692B2 (en) | 1999-06-28 |
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