JPH0411726A - High-frequency discharge utilizing device and manufacture of semiconductor by using same device - Google Patents

Abstract

PURPOSE:To increase the characteristic impedance of an electrode section, and to take matching with discharge impedance easily by using an insulator having a small dielectric constant as the material of an insulating seat disposed to a lower electrode and dividing and arranging the insulating seat. CONSTITUTION:An insulator having a small dielectric constant is employed as the material of insulating seats 13, 14 disposed to a lower electrode 1 while the seats 13, 14 are divided and arranged. High tension is applied and electricity is discharged between the electrode 1 and an upper electrode oppositely faced to the electrode 1, matching with discharge impedance at the time of discharge is taken, and a semiconductor placed on the electrode 1 is discharge-treated. That is, the insulator having the small dielectric constant is adopted as the material of the seats 13, 14 while a structurally smaller equivalent dielectric constant is formed by division and insertion, thus increasing characteristic impedance. Accordingly, discharge impedance between the upper electrode and the electrode 1 and the impedance value of a high-frequency power supply section are brought close and high-frequency discharge is stabilized, and accuracy is improved and cost is reduced while the semiconductor on the electrode 1 is discharge-treated, thus acquiring a product having high quality.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a high-frequency discharge utilization device that enables highly accurate discharge processing, and a semiconductor manufacturing method using the same.

[Conventional technology]

FIG. 3 is a cross-sectional view showing the overall configuration of the high-frequency discharge utilization device, and FIG. 4 is a detailed cross-sectional structural view of portion A in FIG. 3.

In FIG. 3, 1 is a lower electrode, 2 is an upper electrode that is electrically distributed in opposition to the lower electrode 1, 3 is a container for accommodating the picture electrodes 1 and 2 and creates a vacuum, and 4 is a high-frequency generator. The voltage from the power source 5, a high frequency generating power source 4, is applied to the lower electrode 1.
6 is a vacuum pump for creating a vacuum inside the container 3; 7 is a power supply plate for maintaining the vacuum inside the container 3;
Por each to the lower electrode 1 and container 3! 8 is a drive cylinder for vertical movement of the lower electrode 1, and 9 is a guide shaft for vertical movement of the lower electrode 1.

In FIG. 4, 10.12 and 15.16 are insulators for insulating between the front lower electrode 1 and other components, 11 is an electrode cover, and 17 is an electrode section.

Next, the operation will be explained.

The inside of the container 3 is kept in a vacuum state by a vacuum pump 6.

Next, in order to set the distance between the upper electrode 2 and the lower electrode 1 to the target set value, the drive cylinder 8 is operated to raise the lower electrode 1. In this state, a high voltage is applied to the lower electrode 1 from the high frequency power source 4 via the power supply plate 5 to cause a discharge between the upper electrode 2 and the lower electrode 10, and a semiconductor substrate (not shown) placed on the lower electrode 2 is applied. ) etc. Plasma processing such as etching of the object to be etched is performed.

[Problem to be solved by the invention]

The electrode structure of the conventional high-frequency discharge utilization device is configured as described above, and the lower electrode 1 has a long shape in consideration of the movement dimension because it moves up and down. Furthermore, the insulating material used was ceramic. Therefore, the electrode portion has a coaxial cable structure, which causes problems such as a decrease in characteristic impedance and difficulty in matching the discharge impedance.

This invention was made in order to solve the above-mentioned problems, and it provides a high-frequency discharge utilization device in which the characteristic impedance of the electrode portion is thickened (i.e., easy to match with the discharge impedance) and a semiconductor using the same. The purpose of this invention is to obtain a method for manufacturing.

[Means to solve the problem]

The high frequency discharge utilization device according to claim (1) of the present invention includes:
The insulating material disposed on the lower electrode is an insulator with a low dielectric constant, and the insulating material is divided to distribute electricity.

In addition, the invention according to claim (2) uses an insulating material disposed in the lower electrode as an insulator with a small dielectric constant, and divides the insulating material to distribute power, and the upper part facing the lower electrode A high voltage is applied between the electrodes to cause discharge, and the discharge impedance during discharge is matched with the characteristic impedance of the lower electrode portion, thereby performing discharge treatment on the semiconductor placed on the lower electrode.

[Effect]

In the invention described in claim (1) of the present invention, the insulating material of the lower electrode is made of a material with a small dielectric constant, and the insulating material is divided and distributed, so that the characteristics of the electrode portion (> This increases the beadance and makes it easier to match the discharge innovidance.

Further, in the invention as set forth in claim (2), since semiconductor processing is performed by an apparatus in which discharge impedance and characteristic impedance are matched, highly accurate processing can be stably performed.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG.

FIG. 1 is an enlarged sectional view of a lower electrode portion showing an embodiment of the present invention. Note that the same reference numerals in FIG. 1 as in FIGS. 2 and 3 indicate the same components.

In FIG. 1, reference numerals 13 and 14 are insulators made of a material with a low dielectric constant, such as a fluororesin material, which insulates between the lower electrode 1 and other components.
14 is divided and distributed as shown in the figure.

The characteristic impedance Zo of the coaxial cable is the (1st)
It is shown by the formula. That is, ε3 is the relative dielectric constant of the material.This invention uses a material with a small relative permittivity ε3, and structurally creates a smaller equivalent ε3 by dividing and inserting the material, thereby improving the characteristic impedance Z0 to a large value. It is.

Next, the operation will be explained.

This operation is the same as the conventional example shown in FIG. 4, but as in the present invention, the material of the insulators 13 and 14 is made of a material with a small dielectric constant for insulating the lower electrode 1 in the electrode structure. Therefore, stabilization of high-frequency discharge can be achieved by bringing the discharge impedance between the upper electrode 2 and the lower electrode 1 and the innovative value of the high-frequency power supply part close to each other.

Here, when comparing the characteristic impedance with the conventional example,
The dielectric constant ε^ of ceramic used as an insulating material in conventional examples is approximately 9, whereas the dielectric constant ε- of fluororesin is approximately 9.
is approximately 2.1. Therefore, by using this fluororesin having a small dielectric constant, the characteristic impedance becomes larger than Equation (1). Further, as shown in FIG. 1, by dividing the insulation curves 13 and 14, the equal electric current ratio ε3 of both parts is expressed by the equation (2).

ε = ε^ (1-x) + ε-x −-(2
) For example, if the X dimension shown in Figure 2 is 10% of the total and the rest is air, the dielectric constant of air is ε8, so the
), ε=1.11, and compared to the conventional example in which it is integrally formed, the characteristic impedance multiplied by f becomes larger, making it easier to match the discharge impedance. Note that, as is clear from equation (1), the electrode part a in FIG.
It is clear that an effect can also be obtained by improving the ratio 5 of the insulation growth part and the insulation growth part.

〔Effect of the invention〕

As explained above, in this invention, the insulating material disposed on the lower electrode is an insulator with a low dielectric constant, and the insulating material is divided and distributed, so that the discharge impedance value and the high frequency power supply section are The impedance values can be made close to each other, and therefore, a highly accurate device with stable high-frequency discharge can be obtained at low cost.

In addition, the invention described in claim (2) uses an insulating material disposed on the lower electrode as an insulator with a small dielectric constant, and divides the insulating material to distribute power so as to face the lower electrode. A high voltage is applied between the upper electrode and the lower electrode to cause a discharge, the discharge impedance during discharge is matched with the characteristic impedance of the lower electrode, and the semiconductor placed on the lower electrode is subjected to discharge treatment, resulting in discharge innovation and Semiconductor processing can be performed using equipment with matched characteristic impedances, which has the effect of producing high-quality products.

[Brief explanation of the drawing]

Fig. 1 is a detailed sectional view of an electrode portion showing an embodiment of B's invention, Fig. 2 is a schematic diagram for explaining the characteristic innovation, Fig. 3 is an overall structural diagram of a high-frequency discharge utilization device, and Fig. 4 3 is a detailed sectional view of the electrode portion in FIG. 3. FIG. In the figure, 1 is the lower electrode, 2 is the upper electrode, 13.14
is an insulator. Note that the same reference numerals in each figure indicate the same or corresponding parts. Figure 1 Agent Masuo Oiwa (2 others) Figure Figure Figure

Claims (2)

[Claims] (1) In a high-frequency discharge utilization apparatus in which a high voltage is applied between an upper electrode and a lower electrode opposite thereto to cause discharge, and a plasma treatment is performed on an object to be etched placed on the lower electrode, the lower electrode In order to insulate the lower electrode from other constituent members, the material of the insulating seat disposed on the lower electrode is an insulator with a small dielectric constant, and the electric power is distributed by dividing the insulating seat. Equipment used. (2) Using the high-frequency discharge utilization device according to claim (1), applying a high voltage between the lower electrode and the upper electrode facing the lower electrode to cause a discharge, the discharge impedance at the time of the discharge and the characteristic impedance of the lower electrode portion A method of manufacturing a semiconductor, characterized in that the semiconductor placed on the lower electrode is subjected to discharge treatment in alignment with the lower electrode.