JPH04125873A - Hub of disk and its manufacture - Google Patents
Hub of disk and its manufactureInfo
- Publication number
- JPH04125873A JPH04125873A JP24376090A JP24376090A JPH04125873A JP H04125873 A JPH04125873 A JP H04125873A JP 24376090 A JP24376090 A JP 24376090A JP 24376090 A JP24376090 A JP 24376090A JP H04125873 A JPH04125873 A JP H04125873A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- hub
- disk
- metal nitride
- nitride coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 150000004767 nitrides Chemical class 0.000 claims abstract description 28
- 238000010891 electric arc Methods 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000005299 abrasion Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 28
- 238000005259 measurement Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 238000001883 metal evaporation Methods 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000001241 arc-discharge method Methods 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
Description
本発明は、光ディスク又は磁気ディスクのハブとその製
造方法に関する。The present invention relates to a hub for an optical disk or a magnetic disk and a method for manufacturing the same.
光ディスクや磁気ディスクでは記録媒体を環状に構成し
これを支持して駆動するためにその中央孔にステンレス
製等の金属製回転ハブを嵌合固定する。回転ハブは装置
側からスピンドルビンを受けるための中央孔と偏心位置
にある駆動ビンを受けるための軸はずれの孔とを有し、
駆動ビンはディスクを記録再生装置に装着すれば自動的
にハブの面を摺動して軸はずれの孔に嵌合する。このと
きハブの表面には摩耗、擦り傷、粉落ちが発生し、記録
媒体の面に付着してドロップアウトや出力低下の原因と
なる。
第1図はフロッピー磁気ディスク装置の分解構造の概要
を示し、上ケース1、下ケース2の間に、回転ハブ3を
中央孔に嵌合固定した磁気ディスク4、およびその両側
のライナーシート5.6を収納して成る0回転ハブ3は
再生装置側の中心スピンドルビン(図示せず)を受は入
れるための四角形中央孔7と偏心位置にある駆動ビン(
図示せず)を受は入れる軸はずれの四角形の孔8を有す
る。ディスク装置を記録再生装置に装着すれば自動的に
スピンドルビンおよび駆5動ビンはこれらの孔に侵入し
ようとするがこれらのビンは必ずしも孔7.8と正しく
整列していないから、駆動ビンはハブ3の面を摺動しな
がら回転して孔の位置を探して嵌合するに至る。In optical discs and magnetic discs, the recording medium is formed into an annular shape, and a rotating hub made of metal such as stainless steel is fitted and fixed in the central hole of the annular recording medium to support and drive it. The rotating hub has a central hole for receiving the spindle bin from the device side and an off-axis hole for receiving the drive bin at an eccentric position,
When a disk is loaded into a recording/reproducing device, the drive bin automatically slides on the surface of the hub and fits into the off-axis hole. At this time, abrasion, scratches, and powder particles occur on the surface of the hub, which adhere to the surface of the recording medium and cause dropouts and reduced output. FIG. 1 shows an outline of the exploded structure of a floppy magnetic disk device. Between an upper case 1 and a lower case 2, there is a magnetic disk 4 with a rotating hub 3 fitted and fixed in a central hole, and liner sheets 5 on both sides of the magnetic disk 4. The 0-rotation hub 3 has a square center hole 7 for receiving a central spindle bin (not shown) on the playback device side, and a drive bin (not shown) located at an eccentric position.
The receptacle (not shown) has an off-axis square hole 8 for receiving it. When the disk drive is installed in the recording/reproducing device, the spindle bin and the drive bin will automatically try to enter these holes, but since these bins are not necessarily aligned correctly with the holes 7.8, the drive bin will It rotates while sliding on the surface of the hub 3 to find the hole position and fit into it.
回転ハブ3は通常ステンレス鋼(SUS430)又はそ
れにめっき(例えば硬質クロムめっき)をほどこしたも
のなどが使用されているが、金属製の駆動ビンやスビン
ドルピンと接触する部分が何度も使用している間に次第
に摩耗して粉落ちを生じ、これがディスク面に付着する
と原記録やドロップアウトや出力低下を生じ、情報の記
録読み取りにおける誤動作を生じることに成る。
ところで、こうした問題を解決するために摩擦摺動部材
(例えばテープガイド)の表面に金属窒化物の被膜をイ
オンブレーティングにより形成することが提案されてい
る(実開昭63−87691号公報)、シかし、イオン
ブレーティング膜の基体金属に対する接着性は充分でな
く、その粉落ちにより磁気テープの表面への付着に起因
してドロップアウトや出力低下の発生、バックコートの
削れ等の問題を充分に回避することが出来ない。
その原因は基体金属の表面酸化物層、油、汚れ等が充分
に取れないことも一因であるが1表面を清浄化しても必
ずしも充分に満足な耐摩耗性が得られず、又摩擦が充分
に低(出来ないなどの問題が残る。すなわち金属窒化物
自体の物性を向上させることが望まれる。
従って、本発明の目的は光ディスク又は磁気ディスク等
の媒体の回転ハブの耐摩耗性を向上することにある。
【問題点を解決するための手段]
本発明は、光ディスク又は磁気ディスクのハブの表面に
、N/金属比が0.8〜1.2である金属窒化被覆を形
成したことを特徴とするディスク用ハブにより、前記の
問題点を解決する。好ましくは、金属窒化物被覆の膜厚
は0.5〜1.5μmであり、又硬度が2000〜35
00kg/mm8である。
このような金属窒化被覆はハブを真空中に配置し、好ま
しくはその表面にプラズマガスを作用させて表面を清浄
化し、次いで、金属をアーク放電によりイオン化し、窒
素ガス雰囲気中N/金属比が0.8〜1.2となる条件
下に金属窒化被覆を付着させることよりなるイオンブレ
ーティング法により形成される。好ましくは、金属窒化
物被覆の製膜速度が0.5〜2.0μm / h rで
ある。
イオンブレーティング法は原料を蒸発イオン化し、これ
を基体上に析出させる方法であるが、それらの中には不
活性ガス中で金属蒸気をイオン化するマトツクス法、1
0−4程度の不活性ガス又は反応性ガスと高周波RF励
起により金属蒸気をイオン化する高周波励起法、不活性
ガス又は反応性ガスの存在下に複数の熱陰極からの電子
を金属蒸気に衝突させることによりイオン化する多陰極
法、陰極ガンに不活性ガスを導入してプラズマ電子ビー
ムを発生させ、このビームを金属に衝突させて蒸発イオ
ン化し又必要に応じて不活性又は反応性ガス雰囲気を使
用するHCD法(中空陰極ガン法)、反応性ガス又は不
活性ガス中で金属蒸発源と基体との間に正電圧を有する
バイアスプローブを設けたバイアスプローブ法、バイア
スプローブに代えて基体側に正電位を加えた低圧プラズ
マ法、金属蒸発源からの金属蒸気を細いノズルで絞って
クラスターイオンを形成するクラスターイオン法などが
あるが、本発明の目的に適する方法はアーク放電を利用
して金属蒸気をイオン化するアーク放電法である。アー
ク放電法の中でも特に高真空下に行なわれるイオンブレ
ーティングはイオンに強力な運動エネルギーを与え、製
膜効率が良くしかも膜質が良い金属窒化物を生成出来る
ことが分かった。
本発明で摺動部材の金属基体表面に金属窒化物の製膜に
使用出来る金属としてはCr、Hf、Ti、Zr、Mo
%W%Si%B等より選んだ金属であり、特にTi、S
L、Bが好ましい、 金属窒化物はN/金属比が0.8
〜1.2となるように制御しなければならない、この範
囲よりも小さい比率にすると金属同士の摺動のために摩
擦が上昇する。この範囲よりも大きい比率では耐摩耗性
が減じ、粉落ちを生じる原因になる。
アーク放電によるイオンブレーティングは製膜速度を0
.5〜2.0μm / h rの範囲に制御する必要が
あることが分かった。この範囲よりも遅いと生産性が悪
くなる欠点がある。一方、製膜速度が速すぎると金属窒
化物が柱状構造となり、表面性が悪化して摩擦が増大し
、又媒体との接着性が悪くなる。
金属窒化物被覆の膜厚は好ましくは0.5〜1.5μm
である。膜厚がこの範囲よりも大きいと内部応力のため
に金属窒化物の基体からの剥離がおき易くなり、ドロッ
プアウトや出力低下による誤動作の原因となり、この範
囲よりも薄いと金属窒化物被覆が基体(ハブ)上に島状
となって耐摩耗性を低下し、又基体表面付着物が記録媒
体に移行して悪影響を生じる。
金属窒化物被覆の硬度は好ましくは2000〜3500
kg/mm”である、硬度は大体N/金属比に対応する
ので、この範囲よりも低いと金属分が増え駆動ビンとの
間が金属摩擦に近(なり、摩擦が増える。この範囲より
も大きいと駆動ビンの方が摩耗されることになり、誤動
作の原因となる。
好ましくは金属製ハブはプラズマ処理により表面を活性
化し、次工程で付着されるイオンプレティング膜の基体
に対する結合力を上げる。プラズマ処理はAr、He、
Ne等の希ガス、H2゜Nt 、Co、C(L 、Hz
01NO,、NO,、NH,のガス等を真空室に導入
し、プラズマ化しこれを基体に接触させることにより行
なわれる。
プラズマ処理の条件としては通常法のものを使用する。
ガス圧力0.01〜10Torrにて電源は直流、交流
が使用でき、交流の周波数は50Hzから5GHzまで
使用できる。サンプルの形状及び量により処理条件は異
なるが使用電力10W−10KW処理時間0.5秒〜1
0分に設定することができる。
この前処理を行なうと前記の粉落ちの問題が回避出来る
。その理由は表面酸化物層がプラズマの衝撃で除去され
、更に油、汚れ等が充分に除去されることによる0表面
の清浄効果と表面の活性化により接着を向上する。また
接触角が低下することにより濡れが良(なり接着が向上
する。なお、プラズマ前処理を行なう間に基体側にバイ
アス電位を印加することにより更に効果を上げることが
出来る。又、プラズマ処理に代わり、あるいはその前に
アルコール、アセトン、フロン等で超音波洗浄をしても
良い。
聚鳳方韮
第2図のアーク放電装置によって製膜方法を詳しく説明
する。
真空チャンバー20内を約10−’T o r rまで
排気し、次いでTi、SL等の金属蒸発源(ターゲット
)23を、電子銃30にて加熱溶解する。
充分溶解し、所定の金属の蒸発速度が得られたら、イオ
ン化電極に電圧を加え、蒸発金属をイオン化する。イオ
ン化電極に流れる電流を制御するために、熱電子放射を
行ない、所定の電流値を得る。その後、ガス供給通路2
1のバルブを操作し、所定流量の窒素ガスを導入する。
排気系22を調整しながら、例えば、10−’Torr
に調整する。
安定したら、シャッターを開放し成膜する。基板に流れ
る電流を、電子銃制御系によりフィードバックすること
により、安定した成膜が得られる。熱電子放射電極28
とイオン化電極31で形成される電界分布により走行す
るイオン化粒子が他の蒸発粒子と衝突して更にイオン化
粒子を殖やしていく0強力な運動エネルギーを有するイ
オン化粒子はバイアス電圧25により加速されて基板3
2(ハブ)に大きな速度で効率よ(付着する。
その際に窒素ガスは反応しながら付着成長し膜を形成す
る。なお、各部の電位、電流、温度等の条件は実験によ
り容易に設定出来る。
更に、接着性を上げるために予め基板を加熱していても
良い。
次に本発明の詳細な説明する。
【実施例の説明]
第2図に示した装置を使用し第1図に示したディスクハ
ブを製作した。先ずディスクハブの形の基体をステンレ
ス鋼から製作し、この基体を第2図に示し上に説明した
製膜装置に装入し、金属としてTi、Si等を使用し、
N2”ガスの圧力10’Torr、300SCCM、ア
ーク電流100Aの条件で基体の表面に窒化チタン膜を
形成した。
犬11硼1
先ずハブにプラズマ処理を、ガスAr、50SCCM、
圧力0.5Torr、RF周波数13゜56GHz、電
力500W、反応時間1分の条件で行なった。
次ぎに製膜条件としてターゲットにTiを用い、成膜圧
力を調整することにより製膜される窒化チタンのN/T
i比(原子比)を調節し厚さ1.0μmの窒化チタン被
覆を得た。
測定結果を表1に示す、なお各種測定は次の方法により
行なった。
定は下記の方法によった。
1)摩擦
SUSに硬質Crめっきを施した測定ビンを用いて、ハ
ブの表面を摺動させて測定ビンにかかる力をストレイン
ゲージにて測定した。
2)耐摩耗性
R= 5 m mの先端を有する測定ビンに硬質クロム
めっきを施したものを1000回サンプル面上に摺動さ
せたときの摩耗深さを表面粗さ計によって測定し以下の
基準にて表わした。
0・05μm以下 0
0.05〜O,Iμm O
o、1〜1.9μm ×
1.0以上 X×
3)硬度
シリコンウェハー上にハブサンプルと同一条件で成膜し
、超微小硬度計にて測定した。
4)出力低下
信号を入力し、耐摩耗試験後、再びデツキにかけ一周中
に出力が50%低下しているトラックの数。
5)チャッキングミス。
駆動ビンが正常な位置にチャッキングされるかを、10
00回チャッキングした後のミスの回数。
6)出力低下
10枚のディスクに信号を入力し、耐摩耗試験後再生し
たときの出力が50%以下に低下したトラックの数。
7)膜厚及び製膜速度
水晶振動式膜厚モニターを用いて測定した。N/金属比
はESCAにより測定した。
表1
この表から、N/Ti比が0.8〜1.2が好適である
ことが分かる。この範囲よりも小さい比率にすると金属
同士の摺動のために摩擦が上昇する。この範囲よりも大
きい比率では耐摩耗性が減じ、粉落ちを生じる原因にな
る。硬度は好ましくは2000〜3500 k g/m
m2である。硬度は大体N/金属比に対応するので、こ
の範囲よりも低いと金属分が増え駆動ビンとの間が金属
摩擦に近くなり、摩擦が増える。この範囲よりも大きい
と駆動ビンの方が摩耗されることになり、誤動作の原因
となる。
実施例2
次ぎに、N / T i比を1.0に設定し、製膜速度
を調整して厚1.0ミクロンmに製膜した。結果を表2
に示す、なお、測定は次の方法によった。
1)媒体との接着性
ハブとクツキーをハブの接着面の大きさに切り抜いた両
面テープにて張り付け、180度剥離を行ない、接着強
度をロードセルにかかる加重で表わした。
2)ハブの反り
触針式の表面粗さ計で20mm走査し、プロファイルよ
りその高さを求めた。測定値より、未処理のものの測定
値を引いた値を示す。
3)表面粗さ
触針式の表面粗針で3mm走査し、
Raで表わ
した。
表2
この表から、製膜速度が0.5μm/hrより遅いと接
着性が良く、摩擦が少ないが、時間が掛かることが分か
る。一方2.0μm / h rより太きいと摩擦が太
き(なり、又接着強が低下する。よって、0.5〜2.
0μm/hrが好適である。
なお、顕微鏡観察により2.0μm/hrを超える時柱
状構造が発達することを確認した。
実施例3
次ぎに製膜速度1.0μ/ h rにおいて膜厚を変え
た。結果を表3に示す。
表3
表3から厚さ0.5〜1.5μmが好適であり、膜厚が
この範囲よりも大きいと内部応力のために金属窒化物の
基体からの剥離が起き易くなり、ドロップアウトや出力
低下による誤動作の原因となり、この範囲よりも薄いと
金属窒化物被覆が基体(ハブ)上に島状となって耐摩耗
性を低下し、又基体表面付着物が記録媒体に移行して悪
影響を生じることが分かる。
実施例4
この例はTiの代わりにSLを使用して実施例1と同様
にして5isN4を金属窒化物として製膜した。
結果を表4に示す。
表4
表4から明らかなように、
この例では厚さ1゜
〜2.Oumが適当であることが分かった。The rotating hub 3 is usually made of stainless steel (SUS430) or plated (for example, hard chrome plating), but the parts that come into contact with the metal drive bottle and spindle pin are used many times. During this time, the disc gradually wears out and causes powder to fall off, and when this adheres to the disk surface, it causes original recording, dropouts, and a decrease in output, resulting in malfunctions when recording and reading information. By the way, in order to solve these problems, it has been proposed to form a metal nitride film on the surface of a friction sliding member (for example, a tape guide) by ion blasting (Japanese Utility Model Publication No. 87691/1983). However, the adhesion of the ion blating film to the base metal is not sufficient, and the particles fall off and adhere to the surface of the magnetic tape, causing problems such as dropouts, reduced output, and back coat scraping. It cannot be avoided sufficiently. One reason for this is that the surface oxide layer, oil, dirt, etc. of the base metal cannot be removed sufficiently, but even if the surface is cleaned, it is not always possible to obtain sufficiently satisfactory wear resistance, and friction Problems such as the inability to achieve a sufficiently low level remain. In other words, it is desirable to improve the physical properties of the metal nitride itself. Therefore, the purpose of the present invention is to improve the wear resistance of the rotating hub of media such as optical disks or magnetic disks. [Means for solving the problem] The present invention provides a method of forming a metal nitride coating having an N/metal ratio of 0.8 to 1.2 on the surface of the hub of an optical disk or magnetic disk. The above-mentioned problems are solved by a disk hub characterized by: Preferably, the thickness of the metal nitride coating is 0.5 to 1.5 μm, and the hardness is 2000 to 35 μm.
00kg/mm8. Such a metal nitride coating is prepared by placing the hub in a vacuum, preferably applying plasma gas to the surface to clean the surface, and then ionizing the metal by arc discharge to reduce the N/metal ratio in a nitrogen gas atmosphere. It is formed by an ion blasting method which consists of depositing a metal nitride coating under conditions of 0.8 to 1.2. Preferably, the deposition rate of the metal nitride coating is 0.5-2.0 μm/hr. The ion blating method is a method in which raw materials are evaporated and ionized and then deposited on a substrate.
Radio frequency excitation method in which metal vapor is ionized by inert gas or reactive gas of about 0-4 and high frequency RF excitation, electrons from multiple hot cathodes collide with metal vapor in the presence of inert gas or reactive gas. Multi-cathode method for ionization by introducing an inert gas into a cathode gun to generate a plasma electron beam, which collides with the metal to evaporate and ionize it, using an inert or reactive gas atmosphere if necessary HCD method (hollow cathode gun method), bias probe method in which a bias probe with positive voltage is installed between the metal evaporation source and the substrate in a reactive gas or inert gas, There are low-pressure plasma methods that apply an electric potential, and cluster ion methods that form cluster ions by squeezing metal vapor from a metal evaporation source using a thin nozzle, but the method suitable for the purpose of the present invention uses arc discharge to generate metal vapor. This is an arc discharge method that ionizes. Among the arc discharge methods, ion brating, which is performed under high vacuum conditions, imparts strong kinetic energy to ions, and it has been found that it is possible to produce metal nitrides with high film forming efficiency and high quality. In the present invention, metals that can be used to form a metal nitride film on the surface of the metal base of the sliding member include Cr, Hf, Ti, Zr, and Mo.
%W%Si%B, etc., especially Ti, S
L and B are preferred, and the metal nitride has an N/metal ratio of 0.8
The ratio must be controlled to be ~1.2; if the ratio is smaller than this range, friction will increase due to sliding between metals. If the ratio is larger than this range, the abrasion resistance will be reduced and powder will fall off. Ion blating by arc discharge reduces the film forming speed to 0.
.. It was found that it was necessary to control it within the range of 5 to 2.0 μm/hr. If it is slower than this range, there is a drawback that productivity will be poor. On the other hand, if the film forming speed is too high, the metal nitride will form a columnar structure, resulting in poor surface properties, increased friction, and poor adhesion to the medium. The thickness of the metal nitride coating is preferably 0.5 to 1.5 μm.
It is. If the film thickness is larger than this range, the metal nitride coating will easily peel off from the substrate due to internal stress, causing malfunctions due to dropouts or decreased output. If the film thickness is thinner than this range, the metal nitride coating will peel off from the substrate. They form islands on the (hub), reducing wear resistance, and substances deposited on the substrate surface transfer to the recording medium, causing adverse effects. The hardness of the metal nitride coating is preferably 2000 to 3500.
kg/mm", and the hardness roughly corresponds to the N/metal ratio, so if it is lower than this range, the metal content will increase and the friction between the drive bottle and the drive bottle will approach metal friction (and the friction will increase. If it is too large, the drive bottle will be worn out, causing malfunctions. Preferably, the surface of the metal hub is activated by plasma treatment to increase the bonding force of the ion plating film to the substrate, which will be deposited in the next step. Plasma treatment includes Ar, He,
Rare gases such as Ne, H2°Nt, Co, C(L, Hz
This is carried out by introducing gases such as 01NO, NO, NH, etc. into a vacuum chamber, turning them into plasma, and bringing the plasma into contact with the substrate. Conventional conditions are used for the plasma treatment. Direct current or alternating current can be used as a power source at a gas pressure of 0.01 to 10 Torr, and the frequency of alternating current can be used from 50 Hz to 5 GHz. Processing conditions vary depending on the shape and amount of sample, but power consumption: 10W-10KW Processing time: 0.5 seconds to 1
Can be set to 0 minutes. By performing this pretreatment, the problem of powder falling off mentioned above can be avoided. The reason for this is that the surface oxide layer is removed by plasma impact, and furthermore, oil, dirt, etc. are sufficiently removed, resulting in a surface cleaning effect and surface activation, which improves adhesion. In addition, by reducing the contact angle, wetting is improved (and adhesion is improved).The effect can be further improved by applying a bias potential to the substrate side during plasma pretreatment. Alternatively, or before that, ultrasonic cleaning may be performed using alcohol, acetone, chlorofluorocarbon, etc. The film forming method will be explained in detail using the arc discharge apparatus shown in Figure 2. 'T o r r, then the metal evaporation source (target) 23 such as Ti, SL, etc. is heated and melted with an electron gun 30. After sufficient melting and a predetermined metal evaporation rate is obtained, the ionization electrode A voltage is applied to ionize the evaporated metal.To control the current flowing through the ionization electrode, thermionic emission is performed to obtain a predetermined current value.Then, the gas supply passage 2
Operate valve 1 to introduce nitrogen gas at a predetermined flow rate. While adjusting the exhaust system 22, for example, 10-' Torr.
Adjust to. Once stabilized, the shutter is opened and the film is deposited. Stable film formation can be achieved by feeding back the current flowing through the substrate using the electron gun control system. Thermionic emission electrode 28
The ionized particles traveling due to the electric field distribution formed by the ionization electrode 31 collide with other evaporated particles and further propagate the ionized particles.The ionized particles with strong kinetic energy are accelerated by the bias voltage 25 and
2 (hub) at a high speed and efficiency. At this time, nitrogen gas reacts while adhering and growing to form a film. Conditions such as potential, current, temperature, etc. of each part can be easily set by experiment. Further, the substrate may be heated in advance to improve adhesion. Next, the present invention will be explained in detail. [Explanation of Examples] Using the apparatus shown in FIG. First, a disc hub-shaped base was manufactured from stainless steel, and this base was loaded into the film forming apparatus shown in Fig. 2 and explained above, using Ti, Si, etc. as the metal. ,
A titanium nitride film was formed on the surface of the substrate under the conditions of N2'' gas pressure of 10' Torr, 300 SCCM, and arc current of 100 A. First, the hub was subjected to plasma treatment, and gas Ar, 50 SCCM,
The test was carried out under the conditions of a pressure of 0.5 Torr, an RF frequency of 13°56 GHz, a power of 500 W, and a reaction time of 1 minute. Next, N/T of titanium nitride is formed into a film by using Ti as the target and adjusting the film forming pressure as the film forming conditions.
The i ratio (atomic ratio) was adjusted to obtain a titanium nitride coating with a thickness of 1.0 μm. The measurement results are shown in Table 1. Various measurements were carried out by the following methods. The determination was made using the following method. 1) Using a measurement bottle made of friction SUS with hard Cr plating, the surface of the hub was slid and the force applied to the measurement bottle was measured with a strain gauge. 2) Abrasion resistance When a measurement bottle with a tip of R = 5 mm and hard chrome plating was slid over the sample surface 1000 times, the wear depth was measured using a surface roughness meter and the following results were obtained. Expressed based on standards. 0.05 μm or less 0 0.05 ~ O, I μm O o, 1 ~ 1.9 μm × 1.0 or more It was measured using 4) Number of trucks whose output has decreased by 50% during one round after inputting an output reduction signal and applying the deck again after a wear test. 5) Chucking mistake. Check if the drive bin is chucked in the normal position.
Number of mistakes after chucking 00 times. 6) Number of tracks whose output decreased by 50% or less when a signal was input to 10 discs and played back after a wear test. 7) Film thickness and film forming speed Measured using a quartz crystal film thickness monitor. The N/metal ratio was measured by ESCA. Table 1 From this table, it can be seen that the N/Ti ratio is preferably 0.8 to 1.2. If the ratio is smaller than this range, friction will increase due to sliding between metals. If the ratio is larger than this range, the abrasion resistance will be reduced and powder will fall off. Hardness is preferably 2000-3500 kg/m
It is m2. Hardness roughly corresponds to the N/metal ratio, so if it is lower than this range, the metal content will increase and the friction between it and the drive bottle will approach metal friction, increasing the friction. If it is larger than this range, the drive bin will be worn out, causing malfunction. Example 2 Next, the N/Ti ratio was set to 1.0, the film forming speed was adjusted, and a film was formed to a thickness of 1.0 μm. Table 2 shows the results.
The measurement was performed using the following method. 1) Adhesiveness to the medium The hub and the shoe key were attached using double-sided tape cut out to the size of the adhesive surface of the hub, peeled off 180 degrees, and the adhesive strength was expressed as the load applied to the load cell. 2) The warpage of the hub was scanned over 20 mm using a stylus type surface roughness meter, and the height was determined from the profile. The value shown is the value obtained by subtracting the measured value of the untreated product from the measured value. 3) Surface roughness The surface roughness was scanned over 3 mm with a stylus-type surface roughness stylus and expressed as Ra. Table 2 From this table, it can be seen that when the film forming rate is slower than 0.5 μm/hr, the adhesion is good and the friction is low, but it takes time. On the other hand, if it is thicker than 2.0 μm/hr, the friction will become thicker and the adhesive strength will decrease.
0 μm/hr is suitable. In addition, it was confirmed by microscopic observation that a columnar structure developed when the rate exceeded 2.0 μm/hr. Example 3 Next, the film thickness was changed at a film forming rate of 1.0 μ/hr. The results are shown in Table 3. Table 3 From Table 3, a thickness of 0.5 to 1.5 μm is suitable; if the film thickness is larger than this range, the metal nitride is likely to peel off from the substrate due to internal stress, resulting in dropouts and output power. If it is thinner than this range, the metal nitride coating will form islands on the base (hub), reducing wear resistance, and deposits on the base surface may transfer to the recording medium, causing adverse effects. It can be seen that this occurs. Example 4 In this example, a film of 5isN4 was formed as a metal nitride in the same manner as in Example 1, using SL instead of Ti. The results are shown in Table 4. Table 4 As is clear from Table 4, in this example, the thickness is 1° to 2. It turns out that Oum is suitable.
第1図は従来のディスクハブを備えた磁気ディスクケー
スの分解斜視図、及び第2図は本発明のイオンブレーテ
ィング薄膜の製造装置の一例を示す。FIG. 1 is an exploded perspective view of a magnetic disk case equipped with a conventional disk hub, and FIG. 2 shows an example of the ion blating thin film manufacturing apparatus of the present invention.
Claims (6)
いて、該ハブの表面にN/金属比が0.8〜1.2であ
る金属窒化物被覆を有することを特徴とするディスク用
ハブ。(1) A metal hub for an optical disk or a magnetic disk, characterized in that the surface of the hub is coated with a metal nitride having an N/metal ratio of 0.8 to 1.2.
る前記第1項記載のディスク用ハブ。(2) The disk hub according to item 1 above, wherein the metal nitride coating has a thickness of 0.5 to 1.5 μm.
/mm^2である前記第1項又は第2項記載のディスク
用ハブ。(3) Hardness of metal nitride coating is 2000 to 3500 kg
/mm^2.
配置し、窒化物を形成すべき金属をアーク放電によりイ
オン化し、前記金属を窒素ガス雰囲気下、形成される金
属窒化物被覆のN/金属比が0.8〜1.2となる条件
下に前記イオンを前記基体上に付着させ耐摩耗性被覆を
形成することを特徴とする、金属窒化物被覆を有するデ
ィスク用ハブの製造方法。(4) Place a hub for an optical disk or magnetic disk in a vacuum, ionize the metal to form a nitride by arc discharge, and place the metal in a nitrogen gas atmosphere to form the N/metal of the metal nitride coating. A method for manufacturing a disk hub having a metal nitride coating, characterized in that the ions are deposited on the substrate under conditions such that the ratio is 0.8 to 1.2 to form a wear-resistant coating.
/hrである前記第4項記載の製造方法。(5) Film forming speed of metal nitride coating is 0.5 to 2.0 μm
/hr.
ン化する前に、ハブの表面にプラズマガスを作用させて
清浄化を行なう、前記第4項又は第5項記載のディスク
用ハブの製造方法。(6) The method for manufacturing a disk hub according to the above item 4 or 5, wherein the surface of the hub is cleaned by applying plasma gas to the surface of the hub before ionizing the metal to form a nitride by arc discharge. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24376090A JPH04125873A (en) | 1990-09-17 | 1990-09-17 | Hub of disk and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24376090A JPH04125873A (en) | 1990-09-17 | 1990-09-17 | Hub of disk and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04125873A true JPH04125873A (en) | 1992-04-27 |
Family
ID=17108580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24376090A Pending JPH04125873A (en) | 1990-09-17 | 1990-09-17 | Hub of disk and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04125873A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714222A (en) * | 1995-01-23 | 1998-02-03 | Canon Kabushiki Kaisha | Optical recording medium and process for producing same |
-
1990
- 1990-09-17 JP JP24376090A patent/JPH04125873A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714222A (en) * | 1995-01-23 | 1998-02-03 | Canon Kabushiki Kaisha | Optical recording medium and process for producing same |
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