JPH04127532A - Heat treatment of semiconductor wafer - Google Patents

Abstract

PURPOSE:To enhance the electric characteristics and the reliability upon a semiconductor device meeting the requirements that a heat treatment tube is hardly heated even if semiconductor wafers are heat-treated at a high temperature exceeding 1000 deg.C at less external diffusion of impurities out of the heat treatment tube while reducing the pollution of semiconductor wafers by heating the semiconductor wafers by heating the semiconductor wafers only by the high-frequency electromagnetic induction heating system. CONSTITUTION:Firstly, a high-frequency electromagnetic induction heater 12 is provided outside a heat treatment tube 11. Next, a boat 14 loaded with semiconductor wafers 13 is put in the heat treatment tube 11 Next, a heat treatment gas is fed from a nozzle 15 to the heat treatment tube 11. Next, the semiconductor wafers 13 are heated by actuating the high-frequency electromagnetic induction heater 12. At this time, the heat treatment tube 11 and the boat 14 are heated only by the radiant heat from the heated semiconductor wafers 13. After the termination of the heating step, the actuation of the high-frequency electromagnetic induction heater 12 is stopped and then the boat 14 loaded with the semiconductor wafers 13 is pulled out of the heat treatment tube 11.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor wafer heat treatment method.

[Conventional technology]

In the conventional semiconductor wafer heat treatment method, as shown in FIG. 2, the inside of a heat treatment tube 11 is heated by a heater 22, then a boat 14 carrying a semiconductor wafer 13 is placed inside the heat treatment tube 11, and then, A method has been adopted in which heat treatment is performed by flowing a heat treatment atmosphere gas through the nozzle 15.

[The problem that the invention attempts to solve]

In this conventional semiconductor wafer heat treatment method, not only the semiconductor wafer but also the heat treatment tube is heated, so when heat treatment is performed at a high temperature of 1000°C or higher, the heat treatment tube made of quartz is severely deformed and can only be used for a short time. There was a problem with it being put away.

In addition, when a heat-treated tube is made of SiC, which has less deformation when used at high temperatures for long periods of time, SiC has less Fe and less deformation than quartz.
Since it contains a large amount of impurities such as AA and Ca, there is a problem that when heat-treated at high temperature, the impurities diffuse outward, contaminating the semiconductor wafer, and deteriorating the electrical characteristics and reliability of the semiconductor device.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor wafer heat treatment method that does not cause deformation of the heat treatment tube, has a long life, does not contaminate the semiconductor wafer, and provides a semiconductor device without deterioration in electrical characteristics or reliability.

[Means to solve the problem]

The present invention is characterized in that, in a semiconductor wafer heat treatment method for heating a semiconductor wafer, the semiconductor wafer is heated using a high frequency electromagnetic induction heating method.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic diagram of a semiconductor wafer heat treatment apparatus illustrating an embodiment of the present invention.

As shown in FIG. 1, first, a high frequency electromagnetic induction heating heater 12 is provided outside the heat treatment tube 11.

Next, the board 14 on which the semiconductor wafer 13 is placed is placed into the heat treatment tube 11.

Next, a heat treatment atmosphere gas is caused to flow through the nozzle 15.

Next, the high frequency electromagnetic induction heating heater 12 is operated to heat the semiconductor wafer 13. At this time, the heat treatment tube 11 and the boat 14 are only heated by the radiant heat from the heated semiconductor wafers 13.

After the heating is completed, the operation of the high-frequency electromagnetic induction heater 12 is stopped, and the boat 14 carrying the semiconductor wafer 13 is pulled out of the heat treatment tube 11, thereby completing the series of heat treatment operations.

〔Effect of the invention〕

As explained above, the present invention uses a high frequency electromagnetic induction heating method to heat only the semiconductor wafer.
Even when heat treatment is performed at higher temperatures, the heat treatment tube is hardly heated, and the outward diffusion of impurities from the heat treatment tube is small, reducing contamination of semiconductor wafers and improving the electrical properties of semiconductor devices.

This has the effect that reliability does not deteriorate.

Furthermore, since the heat-treated tube is not directly heated, the heat-treated tube made of quartz is less deformed even when used at high temperatures for long periods of time, and has a long lifespan.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a semiconductor wafer heat treatment apparatus illustrating an embodiment of the present invention, and FIG. 2 is a schematic diagram of an example of a conventional semiconductor wafer heat treatment apparatus. DESCRIPTION OF SYMBOLS 1... Heat treatment tube, 2... High frequency electromagnetic induction heating heater, 3... Semiconductor wafer, 4... Boat, 5... Nozzle, 22... Heater.

Claims (1)

[Claims] A semiconductor wafer heat treatment method for heating a semiconductor wafer, characterized in that the semiconductor wafer is heated using a high frequency electromagnetic induction heating method.