JPH04128367A - Film forming device by irradiation with laser - Google Patents
Film forming device by irradiation with laserInfo
- Publication number
- JPH04128367A JPH04128367A JP2247031A JP24703190A JPH04128367A JP H04128367 A JPH04128367 A JP H04128367A JP 2247031 A JP2247031 A JP 2247031A JP 24703190 A JP24703190 A JP 24703190A JP H04128367 A JPH04128367 A JP H04128367A
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- laser
- mirror
- laser beam
- simultaneous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はレーザビームを使用して複数の成膜を行う成膜
装置のレーザビームの切換えおよびビーム量の調整装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a laser beam switching and beam amount adjustment device for a film forming apparatus that forms a plurality of films using a laser beam.
（従来の技術〕
従来の装置は、特開平２−１８８０４号公報に示すよう
に、ターゲットにレーザビームを当てて、レーザアブレ
ーションを行うか、特開平２−２４５８号公報のように
、基板上にレーザビームをアシストする構造となってい
た。(Prior Art) Conventional apparatuses perform laser ablation by applying a laser beam to a target, as shown in Japanese Patent Application Laid-Open No. 2-18804, or perform laser ablation on a substrate, as shown in Japanese Patent Application Laid-Open No. 2-2458. It had a structure that assisted the laser beam.
ここで、同一成膜室内でレーザアブレーションとレーザ
アイスト等複数のレーザ成膜を行う場合は、第４図に示
すように、別個のレーザ発振器を用いて構成する必要が
あった。Here, when a plurality of laser film formations such as laser ablation and laser aist are performed in the same film formation chamber, it is necessary to use separate laser oscillators as shown in FIG.
上記従来技術では、成膜装置毎にレーザ発振器を設置す
るため、据付スペース、装置費用等が大きくなる問題が
あった。In the above-mentioned conventional technology, since a laser oscillator is installed in each film forming apparatus, there is a problem that the installation space, equipment cost, etc. become large.
また、二種のレーザビームの入力は個々に調整する必要
があるため、制御方法が複雑になるという問題があった
。Furthermore, since the inputs of the two types of laser beams must be adjusted individually, there is a problem in that the control method becomes complicated.
上記の成膜装置毎にレーザ発振器を設けず、発振器を共
用化するために、レーザビーム導入窓付近に、ビームの
方向選択用にミラーを設けたものである。In order to share the oscillator without providing a laser oscillator for each of the film forming apparatuses described above, a mirror is provided near the laser beam introduction window for selecting the direction of the beam.
また、レーザビームの制御量調整のためにものミラーを
使用するようにした。In addition, a mirror was used to adjust the control amount of the laser beam.
レーザビームの導入窓付近に設けられたミラーの交換に
より、ビームの導入成膜装置を選択すシことができる。By replacing the mirror provided near the laser beam introduction window, the beam introduction film forming apparatus can be selected.
また、このミラーにハーフミラ−を用いれば、複数の成
膜装置に同時にビームを導入することソできる。Furthermore, if a half mirror is used for this mirror, it is possible to simultaneously introduce the beam into a plurality of film forming apparatuses.
また、このハーフミラ−の角度の調整により、複数の成
膜装置間のレーザビーム導入量を容易し制御することが
できる。Further, by adjusting the angle of this half mirror, the amount of laser beam introduced between the plurality of film forming apparatuses can be easily controlled.
以下、本発明の一実施例を第１図ないし第３ぶにより説
明する。第１図ないし第３図は、エキシマレーザ発振器
１を用いて基板ホルダ７にレーづビームアシストを行う
と共に、ターゲット８にレーザビームを当て基板ホルダ
ー上にレーザアブレーションを行う成膜装置である。An embodiment of the present invention will be described below with reference to FIGS. 1 to 3. 1 to 3 show a film forming apparatus that uses an excimer laser oscillator 1 to perform laser beam assist on a substrate holder 7, and also applies a laser beam to a target 8 to perform laser ablation on the substrate holder.
本装置にはイオン源９等のレーザビーム以外の成膜装置
も設けられている。This apparatus is also provided with a film forming device other than the laser beam, such as an ion source 9.
第１図はレーザアシスト及びレーザアブレーションを同
時に行う場合の構造図で、レーザ発振器より出たレーザ
ビームは調整ミラ一部に設けられたハーフミラ−２によ
り図示のように、ターゲット側と基板ホルダ側に分けら
れ、途中に設けたミラー３．レンズ４．レーザ導入窓５
を通って、ターゲット８および基板ホルダ７に導入され
る。Figure 1 is a structural diagram when laser assist and laser ablation are performed simultaneously. The laser beam emitted from the laser oscillator is directed to the target side and the substrate holder side by a half mirror 2 installed in a part of the adjustment mirror. A mirror placed in the middle 3. Lens 4. Laser introduction window 5
is introduced into the target 8 and the substrate holder 7 through the .
第２図は第１図の構成でレーザアシストを行う場合の構
造図であり、調整ミラ一部にミラーを取付けることによ
り、基板ホルダ側へのみレーザビームを導光できる。FIG. 2 is a structural diagram when performing laser assist with the configuration shown in FIG. 1. By attaching a mirror to a part of the adjustment mirror, the laser beam can be guided only to the substrate holder side.
さらに、第３図はレーザアブレーションのみを行う場合
の構造図で、調整ミラーを取外すことにより、ターゲッ
ト側へのみレーザビームを導光できる。Furthermore, FIG. 3 is a structural diagram when only laser ablation is performed, and by removing the adjustment mirror, the laser beam can be guided only to the target side.
本実施例によれば、調整ミラ一部の交換により成膜源の
切換、又は、同時成膜が可能となる。According to this embodiment, by replacing a part of the adjustment mirror, it is possible to switch the film forming source or perform simultaneous film forming.
また、この調整ミラーにより同時成膜源の成膜量比率の
制御が可能であり、また、イオン源等地の成膜源との成
膜量比率の制御も可能となる。In addition, this adjustment mirror makes it possible to control the ratio of the amount of film formed by the simultaneous film forming source, and also to control the ratio of the amount of film formed with the other film forming source such as the ion source.
本発明によれば、調整ミラーの切換えにより一個のレー
ザ発振器により複数の成膜源の同時使用、又は、切換え
使用が可能となるので、据付面積及び装置費用の低減効
果がある。According to the present invention, by switching the adjustment mirror, it is possible to use a plurality of film forming sources simultaneously or selectively using one laser oscillator, thereby reducing the installation area and equipment cost.
また、調整ミラーにより複数の成膜漸開の成膜比率を調
整できるので、成膜量の制御が簡単になる。Further, since the deposition ratio of a plurality of gradual film depositions can be adjusted using an adjustment mirror, the amount of deposition can be easily controlled.
第１図は本発明の一実施例のレーザアシスト及びレーザ
アブレーションを同時成膜する場合の説明図、第２図の
レーザアシスト成膜時の説明図、第３図はレーザアブレ
ーション成膜時の説明図、第４図の従来技術の説明図で
ある。
１・・・レーザ発振器、２・・・調整ミラー、７・・・
基板ホ第
】
図Fig. 1 is an explanatory diagram of simultaneous laser assist and laser ablation film formation according to an embodiment of the present invention, Fig. 2 is an explanatory diagram of laser assisted film formation, and Fig. 3 is an explanatory diagram of laser ablation film formation. FIG. 4 is an explanatory diagram of the prior art of FIG. 1... Laser oscillator, 2... Adjustment mirror, 7...
Board number] Figure
Claims (3)
照射成膜装置において、 レーザビームの光路に交換可能な調整ミラーを設けたこ
とを特徴とするレーザ照射成膜装置。1. A laser irradiation film forming apparatus equipped with a single laser oscillator and a plurality of film forming sources, characterized in that a replaceable adjustment mirror is provided in the optical path of the laser beam.
膜源間の成膜比率の制御機能を持たせたレーザ照射成膜
。2. 2. The laser irradiation film forming method according to claim 1, wherein the adjustment mirror has a function of controlling a film forming ratio between the plurality of film forming sources.
ーム以外の前記成膜源との制御機能を持たせたレーザ照
射成膜装置。3. 2. The laser irradiation film forming apparatus according to claim 1, wherein the adjustment mirror has a control function with respect to the film forming source other than the laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2247031A JPH04128367A (en) | 1990-09-19 | 1990-09-19 | Film forming device by irradiation with laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2247031A JPH04128367A (en) | 1990-09-19 | 1990-09-19 | Film forming device by irradiation with laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04128367A true JPH04128367A (en) | 1992-04-28 |
Family
ID=17157381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2247031A Pending JPH04128367A (en) | 1990-09-19 | 1990-09-19 | Film forming device by irradiation with laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04128367A (en) |
-
1990
- 1990-09-19 JP JP2247031A patent/JPH04128367A/en active Pending
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